Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
  • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/02—Pretreatment of the material to be coated
  • C23C14/021—Cleaning or etching treatments
  • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
  • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/18—Pretreatment of the material to be coated
  • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/18—Pretreatment of the material to be coated
  • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
  • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
  • C23C18/1865—Heat
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
  • C23C18/18—Pretreatment of the material to be coated
  • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
  • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
  • C23C18/1868—Radiation, e.g. UV, laser
• • C—CHEMISTRY; METALLURGY
  • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
  • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
  • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
  • C25D5/54—Electroplating of non-metallic surfaces
  • C25D5/56—Electroplating of non-metallic surfaces of plastics
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/03—Use of materials for the substrate
  • H05K1/0313—Organic insulating material
  • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
  • H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
  • H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate

Definitions

• the present invention relates to a method for improving the electrical connection properties of the surface of a product made from a polymer-matrix composite comprising a filler.
• Composite in this sense is any material made of one or more polymers with fillings dispersed inside the polymer, suitable fillings be ⁇ ing e.g. particles made from graphite, amorphous hydrogenated carbon, diamond or diamond-like carbon, glassy carbon, soot, fullerene, nanotubes, nanowires and the like of any size or shape. Also the products made from such composites can be of any size or shape including plates, spheres, wires etc.
• Promising substitutes for metals are polymer-matrix compos ⁇ ites. They are characterized by a low weight, good electri ⁇ cal, thermal and mechanical properties, and excellent chemical resistance.
• the major drawback of polymer-matrix composites are, however, poor electrical connection proper ⁇ ties, i.e. poor affinity of any surface metallization and/or directly applied metal connection means (e.g. solder) tontine surface.
• surface etching is performed by traditional methods such as wet chemical etching.
• the typical case is treating super ⁇ conducting composites surface as described in US 6214249 and WO 02/071462.
• the wet chemical etching is also used to im ⁇ prove metal plating of composites (US 6080836) .
• Novel etching methods have been applied in one or more steps for producing integrated circuit devices.
• the in ⁇ novations such as US 2002/055263, US 5705428 and US 2002/125207 are dealing with plasma processing methods for etching semiconductor samples such as wafers with a high fre ⁇ quency discharge.
• Non-equilibrium states of gases such as those used in the above referenced document have been produced for decades .
• the most common method for producing- a highly non-equilibrium gas is by passing gaseous molecules through a discharge. Mole ⁇ cules are excited, dissociated and ionized at inelastic col ⁇ lisions with energetic particles (mainly electrons and metastable atoms) . Excited, atomized and ionized molecules will be called radicals.
• the kinetic temperature of neutral gas is close to room temperature, the average internal energy of radicals can be more than 1 eV, corresponding to the internal temperature exceeding 10.000 0 C. Due to poor energy exchange, the ex ⁇ tremely high radicals temperature is benign to composites, but the radicals readily interact chemically on the surface of polymer-matrix composites.
• the plasma etching as one of the steps in fabrication of polymer fibers is described in US 5221431.
• the method of this disclosure comprises subjecting a fabric made from polyethylene fibers to plasma etching, applying a silane coupling agent to etched fabric, and impregnation the fabric with vinyl ester resins, followed by conventional molding.
• the present invention aims at improving the capa ⁇ bilities of a product made from a filled polymer-matrix com ⁇ posite with regard to electrical connection to adjacent components while providing a simple method for this purpose at low costs.
• the surface of the product treated in such a way is perfectly prepared for sub ⁇ sequent processing.
• the surface is not only sufficiently rough for bonding of a metal connecting means such as solder, but also the metallization deposited on the surface after the second plasma treatment perfectly adheres to the surface since the latter has before been effectively activated and remains in this state a sufficient time such that the benefits from surface activation can be effectively exploited in the subsequent processing, i.e. surface metalli ⁇ zation.
• the said filler in the polymer-matrix composite is preferably sintered carbon or graphite or in another preferred embodi ⁇ ment of the invention a mixture including carbon or graphite.
• the results aimed at are positively influenced by providing for a weakly ionized highly dissociated plasma in the plasma treat ⁇ ment steps of the inventive method.
• the space-charge density is below about 10 17 m "3 , preferably below 10 ls irf 3 and the dissociation fraction of gaseous molecules exceeds 10%.
• the plasma reactivity is to be expressed in terms of density of atomic radicals, a preferred range for the density of the 0 atoms is above 10 20 r ⁇ T 3 , preferably above 10 21 r ⁇ T 3 .
• the present invention makes use of the finding that the in ⁇ teraction of radicals with polymer-matrix composites is highly selective: at first, the radicals react primarily with polymer matrix while leaving fillings untouched. Later on, the radicals may interact also with fillings, but the reac ⁇ tion rate with polymer is always higher than with fillings. This effect was explained by Cvelbar et al . with the follow ⁇ ing considerations.
• This change in surface roughness appears only after about 5 minutes of plasma treatment (see Cvelbar et . al . ) .
• this etching method takes place in a shorter time period and therefore provides a simple and fast method for roughening the surface of a polymer-matrix composite.
• Selective interaction of radicals causes selective etching of polymer-matrix composites.
• At low composite temperature only polymer is etched.
• At elevated temperature some fillings may be etched as well leading to a fast and dramatic increase of the roughness of the polymer matrix composites.
• the first oxygen plasma treatment of the inventive method at ele ⁇ vated temperature is directed to preparing a suitable surface roughness within a short time.
• the second plasma treatment of the inventive method which is performed after the product has been cooled down from the elevated first treatment temperature to a second treatment temperature, is directed primarily to a long- lasting activation of the rough surface received by the first plasma treatment.
• Radicals may be incorporated in the surface layer of a com ⁇ posite causing formation of polar functional groups.
• the ap ⁇ pearance of highly polar groups on the composite surface causes an increase of the surface wettability and thus affin ⁇ ity to metallization (M. Mozetic et al . ) .
• This activation of the material tends to deactivate spontaneously. At high temperatures this deactivation takes place very fast.
• the activation achieved by the first plasma treatment at an ele ⁇ vated temperature has therefore a very small deactivation time and would not last long enough for the following metal ⁇ lization step.
• acceleration of removing the polymer from the surface which also leads to the appearance of filler-grains at the surface and a more ore less increased roughness of the surface, in the high-temperature first plasma treatment allows for a fairly short first plasma treatment time such that plasma reactors for a given throughput may be fairly small and inex ⁇ pensive; similarly the costs of the plasma treatment being directly related to the treatment time are relatively low.
• inventive two-step processing with oxygen radicals or any other radicals and subsequent surface metallization can thus be applied for preparing polymer composites of the type in dispute for subsequent electrical connecting to adjacent com ⁇ ponents, e.g. by soldering.
• process of selec ⁇ tive activation and subsequent surface metallization can also be applied for a similar treatment of sintered carbon or graphite.
• application of the present method leaves the surface free of unbonded or loosely bonded parti ⁇ cles with better affinity to metallization and a higher adhe ⁇ sion of the metal coating on the surface of said sintered carbon or graphite.
• said compos ⁇ ites are exposed to a high flux of oxygen radicals.
• Radicals are usually produced in plasma created in pure oxygen or a mixture of oxygen and another gas (typically argon or any other inert gas) or oxygen containing gas (typically water vapor or hydrogen peroxide) .
• radicals can be also produced by any other technique including thermal dissocia ⁇ tion and shock-wave excitation.
• the first and the second plasma treat ⁇ ment are performed in an atmosphere of a mixture of oxygen and at least one noble gas (preferably argon) , wherein the oxygen content in the initial atmosphere is between 5 and 95 % by volume.
• the first elevated treatment tem ⁇ perature is between 20 to 15O 0 C below the softening tempera ⁇ ture of the polymer in order to improve the first plasma treatment process of selective etching the surface of the polymer-matrix composite with fillings.
• it could also be between 0.7 and 1 times the softening tempera ⁇ ture in Centigrade or, in absolute values and with respect to the most common polymers, between 50 and 500 0 C or, more pre ⁇ ferred, between 80 and 400 0 C.
• the second treatment temperature is below the first treatment temperature in order to provide a long-lasting activated surface of the polymer-matrix compos ⁇ ite. Therefore this temperature is preferably chosen such that the activation time is at least 1 second if not more. In absolute values, this can preferably be achieved, dependent from the treated polymer-matrix composite, with temperatures of less than 150 0 C, more preferably less than 60 0 C or even more preferably temperatures in a range between 15 to 45°C or even less.
• the time for exposing the surface to the second plasma treat ⁇ ment can be much smaller than the time for exposing the sur ⁇ face to the first plasma treatment.
• the second plasma treatment time may be 0.005 to 0.2 times the first plasma treatment time.
• the first treatment may take 1 to 2 minutes, whereas the second treatment takes only about 10 to 15 seconds.
• the metallization should preferably be ini ⁇ tiated shortly after the second plasma treatment (e.g. within (2) [I would dismiss this number] minutes) .
• initialization of the metalliza ⁇ tion step hours after termination of the second plasma treat ⁇ ment may lead to good results.
• This metallization can be performed by making use of any well-known metallization- process, such as a galvanic-process, a PVD-process or a PECVD-process.
• Fig. Ia is a sketch illustrative, presenting polymer-matrix composites composed from polymer-matrix and fillings that react with radicals,
• Fig. Ib is a sketch illustrative, presenting the first stage of selective composite etching - etching of polymer, leaving fillings untouched,
• Fig. Ic is a sketch illustrative, presenting the second stage of selective composite etching - etching of polymer and some fillings at elevated temperatures, leaving gaps between fillings and rough surface,
• Fig. Id is a sketch illustrative, presenting the formation of polar functional groups when radicals are incor ⁇ porated into etched surface
• Fig. 2 is a schematic of the system, representing an exam ⁇ ple of a system intended for selective etching of polymer-matrix composites and subsequent surface ac ⁇ tivation
• Fig. 3 is a graph of Talysurf profiles from three different untreated and plasma treated samples showing the in ⁇ crease in surface roughness
• Fig. 4 is a graph representing the wettability of a deion- ized water drop on the treated sample surface as a function of the radicals' dose
• Fig. 5 is a graph representing an adhesion force of the metallized surface as a function of the radicals' dose of plasma treated samples
• Fig. 6 is a graph representing an electrical resistivity as a function of the radicals' dose.
• FIG. 1 A schematic representation of the method of the present in ⁇ vention is shown in Fig. 1.
• Polymer-matrix composite is ex ⁇ posed to a flux of oxygen radicals.
• the radicals react with surface polymer [Fig. Ia] .
• firstly polymer is etched so that the polymer between the fillings is removed
• FIG.2 An example of a system setup for polymer-matrix composite is presented in schematic Fig.2.
• the system consists of a vacuum pump 1, valve 2, a trap with sieves 3, a discharge chamber 7, two different leak valves 8 and two gas flasks 9 - oxygen and other (inert) gas, giving optimal etching rate.
• a first tern- perature chamber 10 is associated to the discharge chamber (reactor) , the products treated in said temperature chamber 10 to the elevated first plasma treatment temperature at least on their surface being fed to the reactor 7 via con ⁇ veyor 11.
• a second temperature chamber 12 is associated to the discharge chamber 7, the products, after the first plasma treatment step, being fed to the second temperature chamber 12 for cooling down at least on their surface and being sub ⁇ sequently fed back to the reactor for the second low- temperature plasma treatment via conveyor 13.
• the system comprises a metallization chamber 14 of any suited type which is connected to the reactor via conveyor 15.
• Plasma parameters during etching process and the activation process like the dose of radicals in the discharge chamber are controlled by vacuum gauge 4 and two or more probes, such as catalytic probes 5 and Langmuir probes 6.
• a higher flux of oxygen radicals increases surface roughness [Fig. 3] .
• the repre ⁇ sented graphs give an idea about the roughness evolution from a non-treated (bottom) to plasma treated with a small dose of about 6-10 25 radicals per m 2 (middle) or plasma treated with a large dose at elevated temperature with about 15 -10 25 radi ⁇ cals per m 2 (top) .
• the elevated temperature helps in speeding up the process of surface roughening.
• the intense roughening starts at elevated tem ⁇ peratures at the dose of around 10 26 radicals per m 2 , and is completed at the dose of around 2-10 26 radicals per m 2 .
• Addi ⁇ tional roughening is due to the etching effect since some clusters of fillings are removed.
• Exposure to oxygen radicals also causes an activation of the polymer-matrix.
• the result of the incorporation of oxygen radicals into the composite surface is the surface energy increase, resulting in a better wettability.
• the example in Fig. 4 shows the wettability of the deionized water drop on the surface treated with a dose of radicals. Radicals may be incorporated into the surface layer of a composite causing formation of polar functional groups. This activation is car ⁇ ried out again by a second plasma treatment which is per ⁇ formed at a second treatment temperature below the first treatment temperature in order to provide a longer lasting activation of the surface.
• FIG. 5 This substitutes wet chemical etching and a palladium chemisorp- tion, which is the determinant step in metallization by the electroless process that allows establishing strong chemical bonds between the substrate and metallic film.
• the adhesion force of the named plasma-treated samples prior to Nickel (Ni) galvanic metallization is shown in the Fig. 5.
• This technological procedure used as a substitute for activation with palladium and deposition of chemical Ni gives much bet ⁇ ter results.
• the adhesion force for the case of wet chemical etching of the said sample is 18.6 ( ⁇ 10.2)N, comparing to optimal plasma treatment where the adhesion force is 68.5 ( ⁇ 6)N.
• FIG. 6 The decrease of the electrical resistivity versus the radicals dose for two different poly ⁇ mer-matrix samples is shown in Fig. 6.
• the optimal electri ⁇ cal conductivity can be achieved by removing uppermost polymer between grains of better conducting fillings, and increase of surface roughness. In the presented samples this would be at the dose of 7-10 25 radicals per m 2 , when the sur ⁇ face is free of polymer.

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• Treatments Of Macromolecular Shaped Articles (AREA)
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• Chemically Coating (AREA)
• Electroplating Methods And Accessories (AREA)
• Chemical Vapour Deposition (AREA)
• Chemical Or Physical Treatment Of Fibers (AREA)
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• 2004
  • 2004-09-16 ES ES04765264T patent/ES2297462T3/es not_active Expired - Lifetime
  • 2004-09-16 EP EP04765264A patent/EP1828434B1/de not_active Expired - Lifetime
  • 2004-09-16 DE DE602004011407T patent/DE602004011407T2/de not_active Expired - Lifetime
  • 2004-09-16 JP JP2007531601A patent/JP2008513599A/ja not_active Withdrawn
  • 2004-09-16 CN CNA200480044010XA patent/CN101023202A/zh active Pending
  • 2004-09-16 AT AT04765264T patent/ATE384147T1/de not_active IP Right Cessation
  • 2004-09-16 BR BRPI0419052-1A patent/BRPI0419052A/pt not_active IP Right Cessation
  • 2004-09-16 US US11/575,361 patent/US20070286964A1/en not_active Abandoned
  • 2004-09-16 DK DK04765264T patent/DK1828434T3/da active
  • 2004-09-16 WO PCT/EP2004/010362 patent/WO2006029642A1/en active IP Right Grant

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