EP1817795A1 - Metallised film for sheet contacting - Google Patents

Metallised film for sheet contacting

Info

Publication number
EP1817795A1
EP1817795A1 EP05815728A EP05815728A EP1817795A1 EP 1817795 A1 EP1817795 A1 EP 1817795A1 EP 05815728 A EP05815728 A EP 05815728A EP 05815728 A EP05815728 A EP 05815728A EP 1817795 A1 EP1817795 A1 EP 1817795A1
Authority
EP
European Patent Office
Prior art keywords
insulating film
substrate
metallization
contact surface
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05815728A
Other languages
German (de)
French (fr)
Inventor
Karl Weidner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1817795A1 publication Critical patent/EP1817795A1/en
Withdrawn legal-status Critical Current

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Classifications

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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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Definitions

  • the invention relates to a method for contacting one or more electrical contact surfaces on a surface of a substrate and / or at least one component, comprising the step of laminating at least one insulating film of electrically insulating plastic material on the surfaces of the substrate and the component under vacuum, so that the insulating film the surface is tightly covered with the contact surface or surfaces and adheres to this surface.
  • WO03 / 030247 discloses a method of contacting, comprising the further steps of exposing each contact surface to be contacted on the surface by opening respective windows in the film, and contacting each exposed contact surface with a layer of electrically conductive material. According to this method, at least one printed conductor is produced after the surface contacting in and / or on the layer of the electrically conductive material. To produce a multilayer device, the steps of laminating, exposing, contacting and producing the printed conductor are carried out several times.
  • a disadvantage of the conventional contacting method is the effort to be made for contacting, in particular of components on a surface of a substrate. A large number of process steps are required.
  • Allow components on a substrate surface The object is achieved by a method according to the main claim and a device according to the independent claim. Advantageous embodiments can be found in the subclaims.
  • the present method is used to contact only a substrate structure or at least one component on a substrate or at least one component with a substrate together.
  • At least one metallization formed on at least one surface side of the insulating film. This serves to provide interconnects or trace or
  • connection structures can already be formed by means of conventional methods prior to lamination.
  • the films can be produced with one-sided metallization or with two-sided metallization on an insulating film.
  • a metallized insulating film is particularly suitable over the entire surface, part of the surface or pre-structured with conductor tracks copper coating a plastic film.
  • Other metals in particular comparable in electrical resistivity or in processability, may also be used.
  • Windows can be easily generated mechanically, eg, by punching, chemically, eg by etching, or physically, by lasing, plasma opening, before or after the respective laminating step.
  • the contacting may be performed by inserting the metallization toward the electrical contact surface or by leading the electrical contact surface out to the metallization.
  • the contacting takes place at an advantageous pressure and at an advantageous temperature. Surface contact is preferred.
  • Suitable components are electronic components, LEDs, semiconductor chips or power semiconductor chips. A multiplicity of process steps of conventional contacting methods can be dispensed with.
  • Suitable substrates are any circuit carriers based on organic or inorganic substances.
  • Such substrates include PCB (Printed Circuit Board), DCB, IM (Insulated Metal), HTCC (High Temperature Cofired Ceramics) and LTCC (Low Temperature Cofired Ceramics) substrates.
  • the lamination is advantageously carried out in a vacuum press. Vacuum thermoforming, hydraulic vacuum pressing, vacuum gas pressure pressing or similar laminating methods are conceivable for this purpose.
  • the pressure is advantageously applied isostatically.
  • the lamination takes place for example at temperatures of 100 0 C to 25O 0 C and a pressure of 1 bar to 10 bar.
  • the exact process parameters of the lamination, ie pressure, temperature, time, etc., depend inter alia on the topology of the substrate, the plastic material of the insulating film and the thickness of the insulating film.
  • a physical or chemical deposition of the electrically conductive material is advantageously carried out.
  • Such physical methods are sputtering and vapor deposition (Physical Vapor Deposition, PVD).
  • the chemical deposition can be carried out from the gaseous phase (chemical vapor deposition, CVD) and / or liquid phase (liquid phase chemical vapor deposition). It is also conceivable that initially by one of these methods, a thin electrically conductive sub-layer is applied, on which then a thicker electrically conductive sub-layer is electrodeposited.
  • a substrate having a surface which is equipped with one or more semiconductor chips, in particular power semiconductor chips, on each of which one or more contact surfaces to be contacted is or are present, and wherein the at least one insulating film
  • This surface is vacuum-laminated so that the insulating film closely covers and adheres to this surface including each semiconductor chip and each pad, including each semiconductor chip.
  • the insulating film is designed, for example, so that in particular a height difference of up to about 5 mm can be overcome.
  • the height difference is caused inter alia by the topology of the substrate and by the semiconductor chips arranged on the substrate.
  • SMD surface mounted device components can be applied, for example soldered on.
  • the insulating film may consist of any thermoplastics, thermosets and mixtures thereof.
  • a film of a plastic material on polyimide (PI), polyethylene (PE), polyphenol, is advantageously used as film.
  • the film may have an adhesive coating to improve the adhesion on the surface.
  • This additional insulating film has no opening, but preferably in the region of the opening on the metallization.
  • a substrate with a surface equipped with one or more power semiconductor chips is used.
  • Metallizations on different surface sides electrically connected to each other. This can be done via pins.
  • Insulating films made of a plastic material on polyimide, polyethylene, polyphenol, Polyetheretherketon- and / or epoxy-based and used as one-sided or two-sided metallizations copper, aluminum, iron and / or silver or similar electrical conductors.
  • Plastic film can thus be coated on one side of the surface or on both surfaces with metal.
  • pure metal layers can also be used.
  • connection structure corresponds to the required connection of electrical or electronic components that can be applied to a substrate by conventional methods.
  • the metal structure can be produced, for example, via a photolithographic process. Conventional structuring methods are equally applicable.
  • the metallization of the insulating film can be structured by laser ablation, stamping, etching or by a photolithographic process.
  • each exposed contact surface can be carried out by means of thermal pressing, soldering and / or gluing the metalized insulating foil having the metallization.
  • additional metallized connecting foils having at least one metallization may be used.
  • the connecting foils can be fixed by soldering or gluing.
  • the Antitle ist each exposed contact surface by means of soldering and / or gluing the metallized insulating film, that is, the metallization having insulating performed.
  • the contacting takes place areally.
  • the contacting can take place from the metallized insulating film into the exposed contact surface.
  • the execution of the exposed contact surface outwards to the metal interconnects is also feasible with appropriate provision of the contact surfaces.
  • the lamination of the Isolier Anlagen von Heidelberg Kunststoffmaschine is repeated such that a multilayer structure is generated. Likewise, insulating layer thicknesses can thereby be increased.
  • a metallized insulating film with a thickness (d), for example, in particular in the range of 25 to 250 microns is used.
  • an insulating covering on the side of the uppermost insulating film facing away from the substrate, and a metal layer applied to this insulating cover to produce a hermetic seal and direct contact of the metal layer by means of a direct metal connection to an edge region of the substrate.
  • the metal layer serves as a mechanical protection, as a cover, with heat-dissipating properties. Between metal layer and the one Metallized insulating foil, the insulating cover serves as electrical insulation.
  • FIG. 1 shows an illustration of a first exemplary embodiment of a device or the method according to the invention
  • FIG. 2 shows an illustration of a second exemplary embodiment of the device according to the invention or of the method
  • FIG. 3 shows an illustration of a third embodiment of the device according to the invention
  • Fig. 4 is a highly simplified plan view of the third embodiment of the device according to the invention Shen.
  • FIG. 1 shows the construction of a device according to an embodiment with at least one electrical contact surface 1 on a surface of a substrate 2 and / or at least one arranged on the substrate
  • Component 3 On the surfaces of the substrate 1 and the component 3 is at least one electrically insulating Insulating film 4, which bears tightly against the underlying surface and adheres, laminated by vacuum. At least one metallization 5 is applied to at least one surface side of the at least one insulating film 4.
  • the insulating film 4 has at least one window 6 in the contact surface 1, in which the contact surface 1 is in contact with the metallization 5 in a planar manner.
  • an insulating cover 7 is applied to the insulating film 4, and a metal layer 8 is applied to the insulating cover 7, wherein a direct contact of the
  • Metal layer is produced by means of a direct metal connection to an edge region of the substrate for producing a hermetic seal of the device.
  • a cooling body 9 is arranged above the hermetic seal and below the substrate.
  • each exposed contact surface 1 by means of soldering and / or gluing the metallized insulating film 4a is performed. Comparable connection methods are also applicable.
  • the contacting takes place areally.
  • the contacting can take place from the metallized insulating film 4a into the exposed contact surface.
  • the execution of metallized connecting foils 4b (provided separately or as a continuation of the contact surface 1) from the exposed contact surface 1 to the outside to the metal interconnects 5 is also feasible with appropriate provision of the contact surfaces 1.
  • Fig. 3 shows how a metallized insulating film 4a exposed over the outer edges of the substrate 2 and structured for connection to external terminals can be used. This can also compensate for differences in height. This type of flexible AnAuthierung replaces or complements additional connector connections or comparable connection solutions.
  • the film and copper thicknesses can be variably adapted to the respective mechanical, electrical, thermal and comparable requirements.
  • the metallized insulating film 4 a is produced over an insulating film 4 on the left side of the substrate 2 beyond the substrate 2 over a support 10 with non-adhesive properties, for example a Teflon structure 10.
  • the Teflon layer 10 can be removed or separated from the insulating films 4 and 4a in such a way that they are exposed or exposed to the substrate 2.
  • Fig. 4 shows a highly simplified view of FIG. 3 from above.
  • the exposed insulating films 4 and 4a are clearly visible. These each extend beyond the surface of the substrate 2.
  • a hermetic cover of the device by means of a metal layer 8 over an insulating cover 7 may additionally be produced.

Abstract

The invention relates to a method for contacting at least one electrical contact surface (1) on a surface of a substrate (2) and/or at least one component (3) arranged on the substrate (2), especially a semiconductor chip. Said method comprises the following steps: at least one insulating film (4) consisting of an electrically insulating plastic material is laminated, under a vacuum, onto the surfaces of the substrate (2) and the component comprising the contact surface (1); and the contact surface (1) to be contacted on the surfaces is bared by opening a window (6) in the insulating film (4). The invention is characterised by sheet contacting the bared contact surface (1) with at least one metallisation (5) on an insulating film (4).

Description

Beschreibungdescription
Metallisierte Folie zur flächigen KontaktierungMetallized foil for surface contact
Die Erfindung betrifft ein Verfahren zum Kontaktieren einer oder mehrerer elektrischer Kontaktflächen auf einer Oberfläche eines Substrats und/oder mindestens eines Bauelements, mit dem Schritt Auflaminieren mindestens einer Isolierfolie aus elektrisch isolierendem Kunststoffmaterial auf die Oberflächen des Substrats und des Bauelements unter Vakuum, so dass die Isolierfolie die Oberfläche mit der oder den Kontaktflächen eng anliegend bedeckt und auf dieser Oberfläche haftet.The invention relates to a method for contacting one or more electrical contact surfaces on a surface of a substrate and / or at least one component, comprising the step of laminating at least one insulating film of electrically insulating plastic material on the surfaces of the substrate and the component under vacuum, so that the insulating film the surface is tightly covered with the contact surface or surfaces and adheres to this surface.
Die WO03/030247 offenbart ein Verfahren zum Kontaktieren, mit den weiteren Schritten: Freilegen jeder zu kontaktierenden Kontaktfläche auf der Oberfläche durch Öffnen jeweiliger Fenster in der Folie, und flächiges Kontaktieren jeder freigelegten Kontaktfläche mit einer Schicht aus elektrisch leitendem Material. Gemäß diesem Verfahren wird nach dem flächigen Kontaktieren in und/oder auf der Schicht aus dem elektrisch leitendem Material mindestens eine Leiterbahn erzeugt. Zum Herstellen einer mehrlagigen Vorrichtung werden die Schritte Auflaminieren, Freilegen, Kontaktieren und Erzeugen der Leiterbahn mehrmals durchgeführt.WO03 / 030247 discloses a method of contacting, comprising the further steps of exposing each contact surface to be contacted on the surface by opening respective windows in the film, and contacting each exposed contact surface with a layer of electrically conductive material. According to this method, at least one printed conductor is produced after the surface contacting in and / or on the layer of the electrically conductive material. To produce a multilayer device, the steps of laminating, exposing, contacting and producing the printed conductor are carried out several times.
Nachteilig bei dem herkömmlichen Kontaktierungsverfahren ist der zu betreibende Aufwand zur Kontaktierung, insbesondere von Bauelementen auf einer Oberfläche eines Substrats. Es ist eine Vielzahl von Prozessschritten erforderlich.A disadvantage of the conventional contacting method is the effort to be made for contacting, in particular of components on a surface of a substrate. A large number of process steps are required.
Es ist Aufgabe der vorliegenden Erfindung die Nachteile herkömmlicher Verfahren zu überwinden und eine Vereinfachung der Kontaktierung von Kontaktflächen auf einer Substratoberfläche, insbesondere von Kontaktflächen aufIt is an object of the present invention to overcome the disadvantages of conventional methods and to simplify the contacting of contact surfaces on a substrate surface, in particular of contact surfaces
Bauelementen auf einer Substratoberfläche, zu ermöglichen. Die Aufgabe wird durch ein Verfahren gemäß dem Hauptanspruch und eine Vorrichtung gemäß dem Nebenanspruch gelöst. Vorteilhafte Ausgestaltungen finden sich in den Unteransprüchen.Allow components on a substrate surface. The object is achieved by a method according to the main claim and a device according to the independent claim. Advantageous embodiments can be found in the subclaims.
Das vorliegende Verfahren dient der Kontaktierung lediglich einer Substratstruktur oder von mindestens einem Bauelement auf einem Substrat oder von mindestens einem Bauelement mit einem Substrat zusammen. Dabei kann das Auflaminieren mindestens einer Isolierfolie aus elektrisch isolierendem Kunststoffmaterial auf die Oberfläche des Substrats beziehungsweise Bauelements, insbesondere unter Vakuum, derart erfolgen, dass die Isolierfolie die jeweils darunter liegende Oberfläche eng anliegend bedeckt und auf dieser haftet.The present method is used to contact only a substrate structure or at least one component on a substrate or at least one component with a substrate together. In this case, the lamination of at least one insulating film made of electrically insulating plastic material on the surface of the substrate or component, in particular under vacuum, carried out in such a way that the insulating film covers the respective underlying surface closely fitting and adhering to this.
Es erfolgt vor oder nach dem Auflaminieren die Bereitstellung mindestens einer auf mindestens einer Oberflächenseite der Isolierfolie ausgebildeten Metallisierung. Diese dient der Bereitstellung von Leiterbahnen oder Leiterbahn- bzw.Before or after lamination, provision is made of at least one metallization formed on at least one surface side of the insulating film. This serves to provide interconnects or trace or
Kontaktierungsstrukturen. Diese Verbindungsstrukturen können mittels herkömmlicher Verfahren bereits vor dem Laminieren ausgebildet sein. Dabei können die Folien mit einseitiger Metallisierung oder mit zweiseitiger Metallisierung auf einer Isolierfolie erzeugt sein. Als metallisierte Isolierfolie eignet sich insbesondere eine ganzflächig, teilflächig oder mit Leiterbahnen vorstrukturierte Kupferbeschichtung einer Kunststofffolie. Andere insbesondere im spezifischen elektrischen Widerstand oder in der Verarbeitbarkeit vergleichbare Metalle können ebenso verwendet werden. Fenster können auf einfache Weise mechanisch, z.B., durch Stanzen, chemisch, z.B. durch Ätzen, oder physikalisch, durch Lasern, Plasmaöffnen, vor oder nach dem jeweiligen Laminierschritt erzeugt sein. Das Ankontaktieren kann durch Hineinführen der Metallisierung zur elektrischen Kontaktfläche hin oder durch Herausführen der elektrischen Kontaktfläche zur Metallisierung hinaus durchgeführt werden. Das Ankontaktieren erfolgt bei einem vorteilhaften Druck und bei einer vorteilhaften Temperatur. Flächiges Kontaktieren ist bevorzugt. Als Bauelemente eignen sich elektronische Bauelemente, LEDs, Halbleiterchips beziehungsweise Leistungshalbleiterchips. Eine Vielzahl von Prozessschritten herkömmlicher Kontaktierungsverfahren kann entfallen.Contacting structures. These connection structures can already be formed by means of conventional methods prior to lamination. The films can be produced with one-sided metallization or with two-sided metallization on an insulating film. As a metallized insulating film is particularly suitable over the entire surface, part of the surface or pre-structured with conductor tracks copper coating a plastic film. Other metals, in particular comparable in electrical resistivity or in processability, may also be used. Windows can be easily generated mechanically, eg, by punching, chemically, eg by etching, or physically, by lasing, plasma opening, before or after the respective laminating step. The contacting may be performed by inserting the metallization toward the electrical contact surface or by leading the electrical contact surface out to the metallization. The contacting takes place at an advantageous pressure and at an advantageous temperature. Surface contact is preferred. Suitable components are electronic components, LEDs, semiconductor chips or power semiconductor chips. A multiplicity of process steps of conventional contacting methods can be dispensed with.
Als Substrate kommen beliebige Schaltungsträger auf organischer oder anorganischer Basis in Frage. Solche Substrate sind beispielsweise PCB (Printed Circuit Board)-, DCB-, IM (Insulated Metal)-, HTCC (High Temperature Cofired Ceramics)- und LTCC (Low Temperature Cofired Ceramics)- Substrate.Suitable substrates are any circuit carriers based on organic or inorganic substances. Such substrates include PCB (Printed Circuit Board), DCB, IM (Insulated Metal), HTCC (High Temperature Cofired Ceramics) and LTCC (Low Temperature Cofired Ceramics) substrates.
Das Auflaminieren erfolgt vorteilhaft in einer Vakuumpresse. Dazu sind Vakuumtiefziehen, hydraulisches Vakuumpressen, Vakuumgasdruckpressen oder ähnliche Laminierverfahren denkbar. Der Druck wird vorteilhafterweise isostatisch aufgebracht. Das Auflaminieren erfolgt beispielsweise bei Temperaturen von 1000C bis 25O0C und einem Druck von 1 bar bis 10 bar. Die genauen Prozessparameter des Auflaminierens, also Druck, Temperatur, Zeit etc., hängen unter anderem von der Topologie des Substrats, des Kunststoffmaterials der Isolierfolie und der Dicke der Isolierfolie ab.The lamination is advantageously carried out in a vacuum press. Vacuum thermoforming, hydraulic vacuum pressing, vacuum gas pressure pressing or similar laminating methods are conceivable for this purpose. The pressure is advantageously applied isostatically. The lamination takes place for example at temperatures of 100 0 C to 25O 0 C and a pressure of 1 bar to 10 bar. The exact process parameters of the lamination, ie pressure, temperature, time, etc., depend inter alia on the topology of the substrate, the plastic material of the insulating film and the thickness of the insulating film.
Zum flächigen Kontaktieren wird vorteilhaft ein physikalisches oder chemisches Abscheiden des elektrisch leitenden Materials durchgeführt. Derartige physikalische Verfahren sind Sputtern und Bedampfen (Physical Vapor Deposition, PVD) . Das chemische Abscheiden kann aus gasförmiger Phase (Chemical Vapor Deposition, CVD) und/oder flüssiger Phase (Liquid Phase Chemical Vapor Deposition) erfolgen. Denkbar ist auch, dass zunächst durch eines dieser Verfahren eine dünne elektrisch leitende Teilschicht aufgetragen wird, auf der dann eine dickere elektrisch leitende Teilschicht galvanisch abgeschieden wird. Vorzugs- und vorteilhafterweise wird bei dem erfindungsgemäßen Verfahren ein Substrat mit einer Oberfläche verwendet, die mit einem oder mehreren Halbleiterchips, insbesondere Leistungshalbleiterchips bestückt ist, auf deren jedem je eine oder mehrere zu kontaktierende Kontaktflächen vorhanden ist oder sind, und wobei die mindestens eine Isolierfolie auf dieser Oberfläche unter Vakuum auflaminiert wird, so dass die Isolierfolie diese Oberfläche einschließlich jedes Halbleiterchips und jeder Kontaktfläche eng anliegend bedeckt und auf dieser Oberfläche einschließlich jedes Halbleiterchips haftet.For surface contact, a physical or chemical deposition of the electrically conductive material is advantageously carried out. Such physical methods are sputtering and vapor deposition (Physical Vapor Deposition, PVD). The chemical deposition can be carried out from the gaseous phase (chemical vapor deposition, CVD) and / or liquid phase (liquid phase chemical vapor deposition). It is also conceivable that initially by one of these methods, a thin electrically conductive sub-layer is applied, on which then a thicker electrically conductive sub-layer is electrodeposited. Preferably and advantageously, in the method according to the invention, a substrate having a surface is used which is equipped with one or more semiconductor chips, in particular power semiconductor chips, on each of which one or more contact surfaces to be contacted is or are present, and wherein the at least one insulating film This surface is vacuum-laminated so that the insulating film closely covers and adheres to this surface including each semiconductor chip and each pad, including each semiconductor chip.
Die Isolierfolie ist dabei beispielsweise so gestaltet, dass insbesondere ein Höhenunterschied von bis zu ca. 5 mm überwunden werden kann. Der Höhenunterschied ist unter anderem durch die Topologie des Substrats und durch die auf dem Substrat angeordneten Halbleiterchips verursacht. Ebenso können SMD-(surface mounted device) Bauteile aufgebracht, beispielsweise aufgelötet sein.The insulating film is designed, for example, so that in particular a height difference of up to about 5 mm can be overcome. The height difference is caused inter alia by the topology of the substrate and by the semiconductor chips arranged on the substrate. Likewise, SMD (surface mounted device) components can be applied, for example soldered on.
Die Isolierfolie kann aus beliebigen Thermoplasten, Duroplasten und Mischungen davon bestehen. Als Folie wird bei dem erfindungsgemäßen Verfahren Vorzugs- und vorteilhafterweise eine Folie aus einem Kunststoffmaterial auf Polyimid (PI)-, Polyethylen (PE)-, Polyphenol-,The insulating film may consist of any thermoplastics, thermosets and mixtures thereof. In the process according to the invention, a film of a plastic material on polyimide (PI), polyethylene (PE), polyphenol, is advantageously used as film.
Polyetheretherketon (PEEK)- und/oder Epoxidbasis verwendet. Die Folie kann dabei zur Verbesserung der Haftung auf der Oberfläche eine Klebebeschichtung aufweisen.Polyetheretherketone (PEEK) - and / or epoxy-based used. The film may have an adhesive coating to improve the adhesion on the surface.
Gemäß einer vorteilhaften Ausgestaltung wird dieAccording to an advantageous embodiment, the
Metallisierung auf einer weiteren auflaminierten Isolierfolie aus elektrisch isolierendem Kunststoffmaterial auf der der Kontaktfläche zu gewandten Oberflächenseite vor dem Auflaminieren aufgebracht. Diese zusätzliche Isolierfolie weist keine Öffnung, sondern bevorzugt im Bereich der Öffnung die Metallisierung auf. Gemäß einer vorteilhaften Ausgestaltung wird ein Substrat mit einer mit einem oder mehreren Leistungshalbleiterchips bestückten Oberfläche verwendet.Metallization on another laminated insulating sheet of electrically insulating plastic material on the contact surface facing surface facing side applied before lamination. This additional insulating film has no opening, but preferably in the region of the opening on the metallization. According to an advantageous embodiment, a substrate with a surface equipped with one or more power semiconductor chips is used.
Gemäß einer vorteilhaften Ausgestaltung werdenAccording to an advantageous embodiment
Metallisierungen auf verschiedenen Oberflächenseiten miteinander elektrisch verbunden. Dies kann über Kontaktstifte erfolgen.Metallizations on different surface sides electrically connected to each other. This can be done via pins.
Gemäß einer weiteren vorteilhaften Ausgestaltung werdenAccording to a further advantageous embodiment
Isolierfolien aus einem Kunststoffmaterial auf Polyimid-, Polyethylen-, Polyphenol-, Polyetheretherketon- und/oder auf Epoxidbasis und als einseitige oder zweiseitige Metallisierungen Kupfer, Aluminium, Eisen und/oder Silber oder vergleichbare elektrische Leiter verwendet. EineInsulating films made of a plastic material on polyimide, polyethylene, polyphenol, Polyetheretherketon- and / or epoxy-based and used as one-sided or two-sided metallizations copper, aluminum, iron and / or silver or similar electrical conductors. A
Kunststofffolie kann damit auf einer Oberflächenseite oder auf beiden Oberflächenseiten mit Metall beschichtet sein. Grundsätzlich sind auch reine Metallschichten verwendbar.Plastic film can thus be coated on one side of the surface or on both surfaces with metal. In principle, pure metal layers can also be used.
Gemäß einer weiteren vorteilhaften Ausgestaltung ist eineAccording to a further advantageous embodiment is a
Metallisierung der Isolierfolie ganzflächig, teilflächig oder vorstrukturiert bereit gestellt. Die Verbindungsstruktur entspricht der erforderlichen Verbindung von elektrischen oder elektronischen Bauelementen, die auf einem Substrat mit herkömmlichen Verfahren aufgebracht sein können. Die Metallstruktur kann beispielsweise über einen fotolithographischen Prozess erzeugt sein. Herkömmliche Strukturierungsverfahren sind ebenso anwendbar.Metallization of the insulating film over the entire surface, partial area or pre-structured provided. The connection structure corresponds to the required connection of electrical or electronic components that can be applied to a substrate by conventional methods. The metal structure can be produced, for example, via a photolithographic process. Conventional structuring methods are equally applicable.
Die Metallisierung der Isolierfolie kann durch Laserablation, Stanzen, Ätzen oder durch einen fotolithographischen Prozess strukturiert werden.The metallization of the insulating film can be structured by laser ablation, stamping, etching or by a photolithographic process.
Die flächige Ankontaktierung jeder freigelegten Kontaktfläche kann mittels Thermopressen, Anlöten und/oder Aufkleben der die Metallisierung aufweisenden metallisierten Isolierfolie durchgeführt werden. Für das flächige Ankontaktieren können zusätzliche mindestens eine Metallisierung aufweisende metallisierte Verbindungsfolien verwendet werden. Die Verbindungsfolien können durch Anlöten oder Aufkleben fixiert werden.The surface Ankontaktierung each exposed contact surface can be carried out by means of thermal pressing, soldering and / or gluing the metalized insulating foil having the metallization. For surface contacting, additional metallized connecting foils having at least one metallization may be used. The connecting foils can be fixed by soldering or gluing.
Gemäß einer weiteren vorteilhaften Ausgestaltung wird die Ankontaktierung jeder freigelegten Kontaktfläche mittels Anlöten und/oder Aufkleben der metallisierten Isolierfolie, d.h der die Metallisierung aufweisenden Isolierfolie, durchgeführt. Die Kontaktierung erfolgt flächig. Die Kontaktierung kann von der metallisierten Isolierfolie in die freigelegte Kontaktfläche hinein erfolgen. Der umgekehrte Fall, der Hinausführung der freigelegten Kontaktfläche nach außen zu den Metallleiterbahnen ist bei entsprechender Bereitstellung der Kontaktflächen ebenso durchführbar.According to a further advantageous embodiment, the Ankontaktierung each exposed contact surface by means of soldering and / or gluing the metallized insulating film, that is, the metallization having insulating performed. The contacting takes place areally. The contacting can take place from the metallized insulating film into the exposed contact surface. The reverse case, the execution of the exposed contact surface outwards to the metal interconnects is also feasible with appropriate provision of the contact surfaces.
Gemäß einer weiteren vorteilhaften Ausgestaltung wird das Auflaminieren der Isolierschichtfolgen derart wiederholt, dass ein Multilayeraufbau erzeugt wird. Ebenso können dadurch Isolierschichtdicken vergrößert werden.According to a further advantageous embodiment, the lamination of the Isolierschichtfolgen is repeated such that a multilayer structure is generated. Likewise, insulating layer thicknesses can thereby be increased.
Gemäß einer weiteren vorteilhaften Ausgestaltung wird eine metallisierte Isolierfolie mit einer Dicke (d) , beispielsweise insbesondere im Bereich von 25 bis 250 μm verwendet.According to a further advantageous embodiment, a metallized insulating film with a thickness (d), for example, in particular in the range of 25 to 250 microns is used.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt zusätzlich ein Aufbringen einer isolierenden Abdeckung auf der dem Substrat abgewandten Seite der obersten Isolierfolie, und ein zur Erzeugung einer hermetischen Abdichtung erfolgendes Aufbringen einer Metallschicht auf diese isolierende Abdeckung und Erzeugen einer Direktkontaktierung der Metallschicht mittels eines direkten Metallanschlusses an einen Randbereich des Substrats. Die Metallschicht dient als mechanischer Schutz, als Deckel, mit Wärme ableitenden Eigenschaften. Zwischen Metallschicht und der eine Metallisierung aufweisenden metallisierten Isolierfolie dient die isolierende Abdeckung als elektrische Isolierung.According to a further advantageous embodiment, there is additionally an application of an insulating covering on the side of the uppermost insulating film facing away from the substrate, and a metal layer applied to this insulating cover to produce a hermetic seal and direct contact of the metal layer by means of a direct metal connection to an edge region of the substrate. The metal layer serves as a mechanical protection, as a cover, with heat-dissipating properties. Between metal layer and the one Metallized insulating foil, the insulating cover serves as electrical insulation.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt ein Anbringen von Kühlkörpern an der hermetischen Abdichtung von oben und/oder an dem Substrat von unten. Damit kann Wärme verbessert an die Umgebung abgeführt werden.According to a further advantageous embodiment, attaching of heat sinks to the hermetic seal from above and / or on the substrate from below. This heat can be better dissipated to the environment.
Zu den weiteren vorteilhaften Ausgestaltungen gehören mittels der genannten Verfahren erzeugte Vorrichtungen.Further advantageous embodiments include devices produced by the methods mentioned.
Unter Bezugnahme auf die Figuren werden vorteilhafteWith reference to the figures will be advantageous
Ausführungsformen der vorliegenden Erfindung ausführlicher beschrieben. Es zeigen:Embodiments of the present invention described in more detail. Show it:
Fig. 1 eine Darstellung eines ersten Ausführungsbeispiels einer erfindungsgemäßen Vorrichtung bzw. des Verfahrens;1 shows an illustration of a first exemplary embodiment of a device or the method according to the invention;
Fig. 2 eine Darstellung eines zweiten Ausführungsbeispiels der erfindungsgemäßen Vor richtung bzw. des Verfahrens;2 shows an illustration of a second exemplary embodiment of the device according to the invention or of the method;
Fig. 3 eine Darstellung eines dritten Ausführungsbei- spiels der erfindungsgemäßen Vorrichtung,3 shows an illustration of a third embodiment of the device according to the invention,
Fig. 4 eine stark vereinfachte Draufsicht auf das dritte Ausführungsbeispiel der erfindungsgemä ßen Vorrichtung.Fig. 4 is a highly simplified plan view of the third embodiment of the device according to the invention Shen.
Fig. 1 zeigt den Aufbau einer Vorrichtung gemäß einem Ausführungsbeispiel mit mindestens einer elektrischen Kontaktfläche 1 auf einer Oberfläche eines Substrats 2 und/oder mindestens eines auf dem Substrat angeordneten1 shows the construction of a device according to an embodiment with at least one electrical contact surface 1 on a surface of a substrate 2 and / or at least one arranged on the substrate
Bauelementes 3. Auf den Oberflächen des Substrats 1 und des Bauelements 3 ist mindestens eine elektrisch isolierende Isolierfolie 4, die eng an der darunter liegenden Oberfläche anliegt und haftet, durch Vakuum auflaminiert. Mindestens eine Metallisierung 5 ist auf mindestens einer Oberflächenseite der mindestens einen Isolierfolie 4 aufgebracht. Die Isolierfolie 4 weist bei der Kontaktfläche 1 mindestens ein Fenster 6 auf, in welchem die Kontaktfläche 1 mit der Metallisierung 5 flächig kontaktiert ist. Zusätzlich ist eine isolierende Abdeckung 7 auf der Isolierfolie 4, und eine Metallschicht 8 auf der isolierenden Abdeckung 7 aufgebracht ist, wobei eine Direktkontaktierung derComponent 3. On the surfaces of the substrate 1 and the component 3 is at least one electrically insulating Insulating film 4, which bears tightly against the underlying surface and adheres, laminated by vacuum. At least one metallization 5 is applied to at least one surface side of the at least one insulating film 4. The insulating film 4 has at least one window 6 in the contact surface 1, in which the contact surface 1 is in contact with the metallization 5 in a planar manner. In addition, an insulating cover 7 is applied to the insulating film 4, and a metal layer 8 is applied to the insulating cover 7, wherein a direct contact of the
Metallschicht mittels eines direkten Metallanschlusses an einen Randbereich des Substrats zur Erzeugung einer hermetischen Abdichtung der Vorrichtung erzeugt ist. Jeweils ein Kühlkörper 9 ist oberhalb der hermetischen Abdichtung und unterhalb des Substrats angeordnet.Metal layer is produced by means of a direct metal connection to an edge region of the substrate for producing a hermetic seal of the device. In each case, a cooling body 9 is arranged above the hermetic seal and below the substrate.
Fig. 2 zeigt eine Ausführungsform bezüglich der Kontaktierung durch Fenster 6 in der mindestens einen Isolierfolie 4. Beispielsweise wird die Ankontaktierung jeder freigelegten Kontaktfläche 1 mittels Anlöten und/oder Aufkleben der metallisierten Isolierfolie 4a durchgeführt. Vergleichbare Verbindungsverfahren sind ebenfalls anwendbar. Die Kontaktierung erfolgt flächig. Die Kontaktierung kann von der metallisierten Isolierfolie 4a in die freigelegte Kontaktfläche hinein erfolgen. Der umgekehrte Fall, der Hinausführung von metallisierten Verbindungsfolien 4b (separat oder als Fortführung der Kontaktfläche 1 bereitgestellt) von der frei gelegten Kontaktfläche 1 nach außen zu den Metallleiterbahnen 5 ist bei entsprechender Bereitstellung der Kontaktflächen 1 ebenso durchführbar.2 shows an embodiment with respect to the contacting by window 6 in the at least one insulating film 4. For example, the Ankontaktierung each exposed contact surface 1 by means of soldering and / or gluing the metallized insulating film 4a is performed. Comparable connection methods are also applicable. The contacting takes place areally. The contacting can take place from the metallized insulating film 4a into the exposed contact surface. The opposite case, the execution of metallized connecting foils 4b (provided separately or as a continuation of the contact surface 1) from the exposed contact surface 1 to the outside to the metal interconnects 5 is also feasible with appropriate provision of the contact surfaces 1.
Fig. 3 zeigt wie eine metallisierte Isolierfolie 4a über die Außenkanten des Substrats 2 freiliegend und strukturiert für die Anbindung zu außen liegenden Anschlüssen genutzt werden kann. Dadurch lassen sich ebenso Höhenunterschiede ausgleichen. Diese Art der flexiblen Ankontaktierung ersetzt beziehungsweise ergänzt zusätzliche Steckeranbindungen oder vergleichbare Verbindungslösungen. Die Folien- und Kupferdicken können variabel an die jeweiligen mechanischen, elektrischen, thermischen und vergleichbaren Anforderungen angepasst sein. Gemäß Fig. 3 ist die metallisierte Isolierfolie 4a über einer Isolierfolie 4 auf der linken Seite des Substrats 2 über das Substrat 2 hinaus über einer Auflage 10 mit nicht haftenden Eigenschaften, beispielsweise einer Teflonstruktur 10 erzeugt. Die Teflonschicht 10 kann derart von den Isolierfolien 4 und 4a abgenommen bzw. getrennt werden, dass diese freiliegend oder zum Substrat 2 überhängend geschaffen werden.Fig. 3 shows how a metallized insulating film 4a exposed over the outer edges of the substrate 2 and structured for connection to external terminals can be used. This can also compensate for differences in height. This type of flexible Ankontaktierung replaces or complements additional connector connections or comparable connection solutions. The film and copper thicknesses can be variably adapted to the respective mechanical, electrical, thermal and comparable requirements. According to FIG. 3, the metallized insulating film 4 a is produced over an insulating film 4 on the left side of the substrate 2 beyond the substrate 2 over a support 10 with non-adhesive properties, for example a Teflon structure 10. The Teflon layer 10 can be removed or separated from the insulating films 4 and 4a in such a way that they are exposed or exposed to the substrate 2.
Fig. 4 zeigt eine stark vereinfachte Ansicht der Fig. 3 von oben. Die freiliegenden Isolierfolien 4 und 4a sind deutlich zu erkennen. Diese gehen jeweils über die Fläche des Substrats 2 hinaus. Eine hermetische Abdeckung der Vorrichtung mittels einer Metallschicht 8 über einer isolierenden Abdeckung 7 kann zusätzlich erzeugt sein. Fig. 4 shows a highly simplified view of FIG. 3 from above. The exposed insulating films 4 and 4a are clearly visible. These each extend beyond the surface of the substrate 2. A hermetic cover of the device by means of a metal layer 8 over an insulating cover 7 may additionally be produced.

Claims

Patentansprüche claims
1. Verfahren zum Kontaktieren mindestens einer elektrischen Kontaktfläche (1) auf einer Oberfläche eines Substrats (2) und/oder mindestens eines auf dem Substrat (2) angeordneten Bauelementes (3) , insbesondere Halbleiterchips, mit den Schritten:1. A method for contacting at least one electrical contact surface (1) on a surface of a substrate (2) and / or at least one on the substrate (2) arranged component (3), in particular semiconductor chips, comprising the steps:
- Auflaminieren mindestens einer Isolierfolie (4) aus elektrisch isolierendem Kunststoffmaterial auf die die Kontaktfläche (1) aufweisenden Oberflächen des Substrats (2) und des Bauelements unter Vakuum,- laminating at least one insulating film (4) made of electrically insulating plastic material on the surfaces of the substrate (2) and the component having the contact surface (1) under vacuum,
- Freilegen der zu kontaktierenden Kontaktfläche (1) auf den Oberflächen durch Öffnen eines Fensters (6) in der Isolierfolie (4), gekennzeichnet durch- Exposing the contact surface to be contacted (1) on the surfaces by opening a window (6) in the insulating film (4), characterized by
- flächiges Ankontaktieren der freigelegten Kontaktfläche (1) mit mindestens einer Metallisierung (5) auf einer Isolierfolie (4) .- Surface contacting the exposed contact surface (1) with at least one metallization (5) on an insulating film (4).
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Metallisierung (5) auf mindestens einer Oberflächenseite der mindestens einen Isolierfolie (4) vor oder nach dem2. The method according to claim 1, characterized in that the metallization (5) on at least one surface side of the at least one insulating film (4) before or after the
Auflaminieren aufgebracht wurde.Lamination was applied.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Metallisierung (5) auf der der Kontaktfläche (1) zugewandten Oberflächenseite einer nach dem Freilegen zusätzlich auflaminierten Isolierfolie (4) vor dem Auflaminieren aufgebracht wurde.3. The method according to claim 1 or 2, characterized in that the metallization (5) on the contact surface (1) facing surface side of an additionally exposed after exposure insulating film (4) was applied prior to lamination.
4. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, wobei Metallisierungen (5) auf verschiedenen Oberflächenseiten miteinander elektrisch verbunden werden. 4. The method according to one or more of the preceding claims, wherein metallizations (5) are electrically connected to each other on different surface sides.
5. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, wobei5. The method according to one or more of the preceding claims, wherein
Isolierfolie (4) aus einem Kunststoffmaterial auf Polyimid-, Polyethylen-, Polyphenol-, Polyetheretherketon- und/oder auf Epoxidbasis und als einseitige oder zweiseitigeInsulating film (4) made of a plastic material on polyimide, polyethylene, polyphenol, polyetheretherketone and / or epoxy-based and as a one-sided or two-sided
Metallisierung (5) Kupfer, Aluminium, Eisen und/oder Silber verwendet werden.Metallization (5) copper, aluminum, iron and / or silver are used.
6. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, wobei die Metallisierung (5) der Isolierfolie (4) ganzflächig, teilflächig oder vorstrukturiert, insbesondere in Form von Leiterbahnen, bereit gestellt ist.6. The method according to one or more of the preceding claims, wherein the metallization (5) of the insulating film (4) over the entire surface, part-surface or prestructured, in particular in the form of conductor tracks, is provided.
7. Verfahren nach einem oder mehreren der vorhergehenden7. Method according to one or more of the preceding
Ansprüche, wobei die Metallisierung (5) der Isolierfolie (4) durch Lasern,Claims, wherein the metallization (5) of the insulating film (4) by laser,
Stanzen, oder durch ein nasschemisches Verfahren strukturiert wird.Punching, or structured by a wet chemical method.
8. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, wobei die flächige Ankontaktierung jeder freigelegten Kontaktfläche (1) mittels Thermoformen bzw. -pressen, Anlöten, Schweißen und/oder Aufkleben der die Metallisierung (5) aufweisenden metallisierten Isolierfolie (4a) durchgeführt wird.8. The method according to one or more of the preceding claims, wherein the surface Ankontaktierung each exposed contact surface (1) by means of thermoforming or -pressen, soldering, welding and / or gluing of the metallization (5) having metallized insulating film (4a) is performed.
9. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, wobei für das flächige Ankontaktieren zusätzliche mindestens eine Metallisierung (5) aufweisende metallisierte Verbindungsfolien (4b) verwendet werden.9. The method according to one or more of the preceding claims, wherein for the surface Ankontaktieren additional at least one metallization (5) having metallized connecting foils (4b) are used.
10. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, wobei die Metallisierung (5) aufweisende metallisierte Isolierfolie (4) über die Außenkanten des Substrats (2) freiliegend und strukturiert zur Anbindung zu Außenanschlüssen erzeugt wird.10. The method according to one or more of the preceding claims, wherein the metallization (4) having metallized insulating film (4) over the outer edges of the substrate (2) exposed and structured for connection to external terminals is generated.
11. Verfahren nach einem der vorhergehenden Ansprüche, gekennzeichnet durch die weiteren Schritte:11. The method according to any one of the preceding claims, characterized by the further steps:
- Aufbringen einer isolierenden Abdeckung (7) auf die oberste Isolierfolie (4),- Applying an insulating cover (7) on the uppermost insulating film (4),
- Aufbringen einer Metallschicht (8) auf die isolierende Abdeckung (7) und Erzeugen einer Direktankontaktierung der- Applying a metal layer (8) on the insulating cover (7) and generating a Direktankontaktierung the
Metallschicht (8) mittels eines direkten Metallanschlusses an einen Randbereich des Substrats (2) zur Erzeugung einer hermetischen Abdichtung.Metal layer (8) by means of a direct metal connection to an edge region of the substrate (2) for producing a hermetic seal.
12. Verfahren nach einem der vorhergehenden Ansprüche, gekennzeichnet durch den weiteren Schritt:12. The method according to any one of the preceding claims, characterized by the further step:
-Aufbringen mindestens eines Kühlkörpers (9) oberhalb der hermetischen Abdichtung und/oder unterhalb des Substrats (2) .Applying at least one heat sink (9) above the hermetic seal and / or below the substrate (2).
13. Vorrichtung mit mindestens einer elektrischen13. Device with at least one electrical
Kontaktfläche (1) auf einer Oberfläche eines Substrats (2) und/oder mindestens eines auf dem Substrat (2) angeordneten Bauelementes (3) , wobeiContact surface (1) on a surface of a substrate (2) and / or at least one arranged on the substrate (2) component (3), wherein
- auf den Oberflächen des Substrats (2) und des Bauelementes (3) mindestens eine elektrisch isolierende Isolierfolie (4) durch Vakuum auflaminiert ist,- On the surfaces of the substrate (2) and the component (3) at least one electrically insulating insulating film (4) is laminated by vacuum,
- mindestens eine Metallisierung (5) auf mindestens einer Oberflächenseite der Isolierfolie (4) aufgebracht ist,at least one metallization (5) is applied to at least one surface side of the insulating film (4),
- die Isolierfolie (4) von der Kontaktfläche (1) zu der Metallisierung (5) ein Fenster (6) aufweist, in welchem- The insulating film (4) from the contact surface (1) to the metallization (5) has a window (6), in which
- die Kontaktfläche (1) mit der Metallisierung (5) flächig ankontaktiert ist.- The contact surface (1) with the metallization (5) is contacted flat.
14. Vorrichtung nach Anspruch 13, wobei die die Metallisierung (5) aufweisende metallisierte14. The apparatus of claim 13, wherein the metallization (5) having metallized
Isolierfolie (4) über die Außenkanten des Substrats (2) freiliegend und strukturiert zur Anbindung zu Außenanschlüssen ausgebildet ist.Insulating film (4) over the outer edges of the substrate (2) exposed and structured designed for connection to external connections.
15. Vorrichtung nach Anspruch 13 und/oder 14, wobei zusätzlich15. The apparatus of claim 13 and / or 14, wherein additionally
- eine isolierende Abdeckung (7) auf der obersten Isolierfolie (4), und- An insulating cover (7) on the uppermost insulating film (4), and
- eine Metallschicht (8) auf der isolierenden Abdeckung (7) aufgebracht ist, wobei eine Direktankontaktierung der Metallschicht (8) mittels eines direkten Metallanschlusses an einen Randbereich des Substrats (2) zur Erzeugung einer hermetischen Abdichtung der Vorrichtung erzeugt ist.- A metal layer (8) on the insulating cover (7) is applied, wherein a Direktankontaktierung of the metal layer (8) by means of a direct metal connection to an edge region of the substrate (2) is generated to produce a hermetic seal of the device.
16. Vorrichtung nach Anspruch 15, wobei mindestens ein Kühlkörper (9) oberhalb der hermetischen16. The apparatus of claim 15, wherein at least one heat sink (9) above the hermetic
Abdichtung und/oder unterhalb des Substrats (2) angeordnet ist. Seal and / or below the substrate (2) is arranged.
EP05815728A 2004-11-29 2005-11-21 Metallised film for sheet contacting Withdrawn EP1817795A1 (en)

Applications Claiming Priority (2)

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DE102004057494A DE102004057494A1 (en) 2004-11-29 2004-11-29 Metallized foil for surface contact
PCT/EP2005/056094 WO2006058850A1 (en) 2004-11-29 2005-11-21 Metallised film for sheet contacting

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WO2006058850A1 (en) 2006-06-08
CN101061582A (en) 2007-10-24

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