WO2016016140A1 - Circuit carrier, electronic assembly, method for producing a circuit carrier - Google Patents

Circuit carrier, electronic assembly, method for producing a circuit carrier Download PDF

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Publication number
WO2016016140A1
WO2016016140A1 PCT/EP2015/067052 EP2015067052W WO2016016140A1 WO 2016016140 A1 WO2016016140 A1 WO 2016016140A1 EP 2015067052 W EP2015067052 W EP 2015067052W WO 2016016140 A1 WO2016016140 A1 WO 2016016140A1
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WO
WIPO (PCT)
Prior art keywords
layer
circuit carrier
microns
heat sink
insulating layer
Prior art date
Application number
PCT/EP2015/067052
Other languages
German (de)
French (fr)
Inventor
Sabine Bergmann
Erich Mattmann
Frank Meyer
Michael Nitzschke
Hartmut Beyer
Uwe Horn
Steffen Marx
Alexander Paul
Original Assignee
Continental Automotive Gmbh
Gfe Fremat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive Gmbh, Gfe Fremat Gmbh filed Critical Continental Automotive Gmbh
Publication of WO2016016140A1 publication Critical patent/WO2016016140A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • Circuit carrier electronic assembly, method for producing a circuit carrier
  • the present invention relates to a circuit carrier and an electronic module, in particular a power ⁇ electronic circuit, with a said circuit carrier. Furthermore, the invention relates to a method for producing a said circuit carrier.
  • Electronic assemblies in particular power electronics circuits, are used in the technical devices, in particular in hybrid electric / electric vehicles, in which high currents flow through power components of the electronic assemblies.
  • the electronic components or the power components generate high power losses in the form of waste heat, which must be dissipated from the electronic modules in a timely manner to their formation.
  • metallic heat sinks are provided with which the power components of the electronic modules are thermally coupled.
  • the object of the present invention is to provide a way to produce the electronic assemblies cost and in a simple manner.
  • a circuit carrier comprises a metallic heat sink, in particular an aluminum heat sink, with a surface.
  • the circuit carrier further comprises a ceramic Insulation layer which is thermally spray-coated directly on the aforementioned surface of the heat sink.
  • the insulating layer has a surface on a side opposite from the heat sink side.
  • the circuit ⁇ carrier also has a metallic wiring layer, which is spray-coated directly on the aforementioned surface of the insulating layer. This conductor layer forms at least one conductor track of the circuit carrier for transmitting electrical current.
  • the heat sink may be formed, for example, as a conventional heat sink with pin-fin structure or as a portion of a metallic housing part of an electronic assembly in which the circuit carrier is arranged.
  • the heat sink contains predominantly aluminum or aluminum alloy, copper or copper alloy.
  • the ceramic insulating layer is applied in a thermal spraying process, in particular an atmospheric plasma spraying process, a Hoch Anthonysflammspritzver drive ⁇ or a flame spraying method.
  • the insulating layer can be applied over the entire surface of the heat sink or partially only in the areas of the surface of the heat sink, where the conductor layer is formed from ⁇ and must be electrically isolated from the heat sink.
  • the metallic conductor track layer is preferably sprayed in a thermal spraying process, in particular in a cold gas spraying process or in a plasma, flame or
  • this wiring layer forms an electrical Lei ⁇ terbahn für and also serves as an adhesion layer for me ⁇ chanical connection between the circuit components such as the power components or the solder paste on the heatsink.
  • the invention is based on the idea that the costs can be saved in the electronic assemblies primarily by reducing the components of the electronic modules and the number of necessary manufacturing steps.
  • the aim was to perform the electronic assemblies with as few components as possible without sacrificing functionality and quality in the electronic assemblies. It was recognized that the conventional carrier media, such. As board, circuit boards, DCB substrates, ceramic substrates, can be completely dispensed with, if the circuit components of an electronic module, such as the power components and tracks, can be arranged directly on the heat sink and mechanically supported by the heat sink, which anyway for cooling the circuit components is provided.
  • the electrical insulation between the metallic heat sink and the circuit components can be ensured in a simple manner by means of an insulating layer, which can also serve as a connection layer for mechanical connection between the heat sink and the circuit components.
  • the electrical tracks for the circuit components can then be formed directly on the insulating layer.
  • an insulating layer and a conductor layer were each provided, which are applied one after the other directly on the heat sink.
  • thermal spray coating is the optimum solution for applying the insulation layer and the conductor layer to the heat sink and for mechanically and stably bonding them to one another and also to the heat sink.
  • the fact that the two layers are applied by thermal spraying the two layers can be coated in one and the same spray coating system sequentially on the heat sink. Since the processes for thermal spray coating can also be carried out cost-effectively as long-tested and widely used methods in various methods, a circuit carrier or an electronic assembly with one of such circuit carriers described above can also be manufactured in a simple and cost-effective manner.
  • the insulating layer non-oxide ceramic material such as aluminum nitride and / or silicon nitride.
  • the insulating layer contains via ⁇ predominant part of oxide-ceramic material, particularly aluminum oxide A1203.
  • the insulating layer contains alumina with a mass fraction of at least 75%, preferably more than 85% or more than 90%, in particular between 95% and 98%, especially about 97%.
  • the insulating layer contains in addition to the aforementioned ceramic material such as alumina at least one further ceramic material, in particular a further oxide ceramic material, such as. B. magnesium oxide or
  • the insulating layer are aluminum oxide contains titanium oxide, especially Ti02, preferably a Mas ⁇ phase fraction of up to 25%, typically up to 10%, especially between 2% to 5%, especially from about 3%.
  • the insulating layer consists for the most part of a mixture of aluminum oxide A1203 and titanium oxide Ti02 with respective mass fractions of 97% and 3%.
  • An isolation layer from a mixture of A1203 and TiO2 with the respective mass proportions of 97% and 3% is more ductile and to a certain extent more elastic than an insulation layer made of pure A1203 or other ceramic or oxide-ceramic materials and can therefore vary in temperature from -40 ° C to 150 ° C withstand better.
  • the insulation layer has a layer thickness of preferably more than 50 micrometers, in particular about 100 microns, or 200 microns, typi cally ⁇ of about 125 micrometers on.
  • the wiring layer is formed in particular as aluminum conductor ⁇ web layer, which contains aluminum in major part.
  • the conductor track layer preferably contains aluminum with a mass fraction of more than 90-6, preferably more than 95%, especially more than 99%, typically more than 99.5%.
  • the wiring layer preferably has a layer thickness of over 30 microns, more preferably over 100 microns, especially over 200 microns, typically about 250 microns.
  • the aluminum interconnect layer has a better adhesive strength on a layer of other material such. B. on copper.
  • the aluminum interconnect layer functions as an adhesion layer between the above-described insulation layer and a copper-containing solder layer to be described below, in that the aluminum interconnect layer forms a cohesive, stable mechanical layer Establishment of connection between the insulation layer and the solder layer.
  • the combination of the insulating layer of mixture of the two aforementioned oxide ceramic materials alumina A1203 and titanium oxide Ti02 in respective proportions by weight of 97% and 3% and the thermal spray-coated, in particular cold spray-coated, conductor track view of aluminum offers a very good thermal cycling resistance of the circuit substrate and thus a long service life in the circuit carrier.
  • the combination of the insulating layer and the spritzbe ⁇ coated on this insulating layer, in particular Kaltgasspritzbe Anlageneten, conductor track layer makes an adjustment in terms of thermal expansion coefficients in the insulation and conductor layer layer superfluous.
  • the wiring layer has a surface on a side opposite to the insulation layer.
  • the circuit carrier comprises a metallic solder layer (solder pads), the spray-coated directly on the surface of the printed circuit ⁇ web layer, in particular cold gas spraying is.
  • the solder layer contains in the predominant part, ie with a mass fraction of at least 51%, preferably 75%, in particular 85%, especially at least 99.5%, copper and is thus ideally suited for a soft solder connection.
  • the solder layer preferably preferably has a layer thickness of more than 30 micrometers, in particular more than 300 micrometers, especially up to 0.6 millimeters, 0.7 millimeters or 1 millimeter, typically of about 50 micrometers.
  • an electronic assembly in particular a power electronics circuit
  • the electronic module comprises at least one circuit carrier described above and at least one power component, which is electrically conductively connected via the solder layer with the conductor ⁇ layer of the circuit substrate.
  • the power component is soldered only on a solder paste directly on the solder layer.
  • the power component is soldered by a soft ⁇ solder on the solder layer.
  • a method for producing a circuit carrier described above has the following method steps.
  • a metallic heat sink in particular an aluminum heat sink
  • the surface of the heat sink is thermally spray coated with a ceramic material, in particular a oxidkera ⁇ mix material, preferably alumina.
  • the metal oxide forms on the surface of the heat sink to form a ceramic, in particular an oxide-ceramic, insulating layer.
  • a surface of the insulating layer lying on a side opposite to the heat sink is also thermally spray-coated with a metal or a metal alloy, especially aluminum or an aluminum alloy.
  • the metal or Me ⁇ talllegtechnik formed on the surface of the insulation layer to a metal wiring layer that forms at least one conductor track for the transfer of electric current.
  • the ceramic, in particular the oxidkera ⁇ mix, insulation layer is in an atmospheric plasma spraying method ⁇ , a Hoch Anthonysflammspritzver ⁇ drive or injection coated with a flame spraying process.
  • the insulating layer will be partially applied only in Be rich ⁇ the surface of the heat sink, where the wiring layer or the wiring pattern is formed and thus must be electrically isolated from the heat sink.
  • the metallic interconnect layer is preferably coated in a cold gas spraying process on the surface of the insulating layer.
  • the surface of the wiring layer lying on a side opposite to the insulation layer is also spray-coated with a metal or a metal alloy, especially copper or a copper alloy, whereby the metal or metal alloy on the surface of the wiring layer becomes a metallic solder layer Soldering, for example, a power component forms.
  • Figure 1 in a schematic side sectional view of a
  • FIG. 2 shows a schematic flowchart of a method for producing a circuit carrier of the power electronics circuit shown in FIG.
  • FIG. 1 shows a power electronics circuit LS (that is to say an electronic module), which comprises a circuit carrier ST, on which power components and electrical connections are arranged and electrically interconnected.
  • LS that is to say an electronic module
  • the circuit carrier ST comprises an aluminum heat sink KK, which forms a portion of a housing power electronics circuit LS and on one side of cooling fins PF to increase the cooling surface of the heat sink KK and thus to improve the cooling effect.
  • the cooling body KK On a side opposite the cooling fins PF side, the cooling body KK has a flat surface OF1, on which an insulation layer IS is applied directly by spray coating.
  • the insulating layer IS consists predominantly of aluminum oxide A1203 with a mass fraction of 97% and contains titanium oxide TiO 2 with a mass fraction of 3%. In addition, the insulating layer IS has a layer thickness of about 125 micrometers.
  • the insulating layer IS has a surface OF2 on which a conductor layer LB is applied directly by spray coating.
  • the wiring layer LB aluminum ⁇ minium contains a mass fraction of 99.5% and forming conductor tracks for electrical connections between circuit components such. B. power components.
  • the conductor layer LB has a layer thickness of about 250 microns.
  • the conductor track layer LB On a side opposite from the insulating layer IS, the conductor track layer LB has a surface OF3 on which a solder layer LF is applied directly by spray coating.
  • the solder layer LF consists predominantly of copper and has a layer thickness of about 50 microns.
  • a power component LB is electrically conductively and mechanically connected to the solder layer LF by means of a solder paste.
  • the power component LB is electrically conductively connected to a conductor track via a bond connection BD.
  • FIG. 2 shows a method for producing the circuit carrier ST shown in FIG. 1 in a flow chart.
  • powder of a mixture of aluminum oxide A1203 and titanium oxide TiO 2 is first applied on the surface OF1 of the aluminum cooling body KK in an atmospheric plasma spraying process. After application or application on the surface OF1 of the aluminum heat sink KK, the mixture forms the oxide-ceramic insulation layer IS.
  • the aluminum powder is deposited on the surface OF2 of the insulating layer IS according to a further method step S200 in a further cold spraying process. As a result, the aluminum powder forms the conductor layer LB.
  • the copper powder forms the solder layer LF.

Abstract

The invention discloses a circuit carrier (ST) having the following features: - a metal heat sink (KK); - a ceramic insulation layer (IS) which is sprayed-coated directly onto the surface (OF1) of the heat sink (KK), wherein the insulation layer (IS) has a surface (OF2) on a side which is opposite the heat sink (KK); - a metal conductor track layer (LB) which is sprayed-coated directly onto the surface (OF2) of the insulation layer (IS) and which forms at least one conductor track of the circuit carrier (ST) for transmitting electric current. The invention further discloses an electronic assembly (LS), in particular a power electronics circuit, comprising a circuit carrier (ST), and also discloses a method for producing a circuit carrier (ST).

Description

Beschreibung description
Schaltungsträger, elektronische Baugruppe, Verfahren zum Herstellen eines Schaltungsträgers Circuit carrier, electronic assembly, method for producing a circuit carrier
Die vorliegende Erfindung betrifft einen Schaltungsträger sowie eine elektronische Baugruppe, insbesondere eine Leistungs¬ elektronikschaltung, mit einem genannten Schaltungsträger. Ferner betrifft die Erfindung ein Verfahren zum Herstellen eines genannten Schaltungsträgers. The present invention relates to a circuit carrier and an electronic module, in particular a power ¬ electronic circuit, with a said circuit carrier. Furthermore, the invention relates to a method for producing a said circuit carrier.
Elektronische Baugruppen, insbesondere Leistungselektronikschaltungen, werden in den technischen Vorrichtungen, insbesondere in Hybridelektro-/Elektrofahrzeugen, verwendet, bei denen hohe Ströme durch Leistungsbauelemente der elektronischen Baugruppen fließen. Beim Betrieb erzeugen die elektronischen Baugruppen beziehungsweise die Leistungsbauelemente hohe Verlustleistungen in Form von Abwärme, die zeitnah zu deren Entstehung von den elektronischen Baugruppen abgeführt werden müssen. Hierzu sind metallische Kühlkörper vorgesehen, mit denen die Leistungsbauelemente der elektronischen Baugruppen thermisch gekoppelt sind. Electronic assemblies, in particular power electronics circuits, are used in the technical devices, in particular in hybrid electric / electric vehicles, in which high currents flow through power components of the electronic assemblies. During operation, the electronic components or the power components generate high power losses in the form of waste heat, which must be dissipated from the electronic modules in a timely manner to their formation. For this purpose, metallic heat sinks are provided with which the power components of the electronic modules are thermally coupled.
Es besteht allgemein die Anforderung, die technischen Vor- richtungen möglichst kostengünstig herzustellen. There is a general requirement to produce the technical devices as inexpensively as possible.
Damit besteht die Aufgabe der vorliegenden Erfindung darin, eine Möglichkeit bereitzustellen, die elektronischen Baugruppen kostengünstig und in einfacher Weise herzustellen. Thus, the object of the present invention is to provide a way to produce the electronic assemblies cost and in a simple manner.
Diese Aufgabe wird durch Gegenstände der unabhängigen Ansprüche gelöst. Vorteilhafte Ausgestaltungen sind Gegenstand der Un¬ teransprüche . Gemäß einem ersten Aspekt der Erfindung wird ein Schaltungsträger bereitgestellt. Der Schaltungsträger umfasst einen metallischen Kühlkörper, insbesondere einen Aluminiumkühlkörper, mit einer Oberfläche. Der Schaltungsträger umfasst ferner eine keramische Isolationsschicht, die unmittelbar auf der zuvor genannten Oberfläche des Kühlkörpers thermisch spritzbeschichtet ist. Dabei weist die Isolationsschicht auf einer von dem Kühlkörper entgegengesetzten Seite eine Oberfläche auf. Der Schaltungs¬ träger weist außerdem eine metallische Leiterbahnschicht auf, die unmittelbar auf der zuvor genannten Oberfläche der Isolationsschicht spritzbeschichtet ist. Diese Leiterbahnschicht bildet zumindest eine Leiterbahn des Schaltungsträgers zum Übertragen von elektrischem Strom aus. This object is solved by subject matters of the independent claims. Advantageous embodiments are the subject of Un ¬ teransprüche. According to a first aspect of the invention, a circuit carrier is provided. The circuit carrier comprises a metallic heat sink, in particular an aluminum heat sink, with a surface. The circuit carrier further comprises a ceramic Insulation layer which is thermally spray-coated directly on the aforementioned surface of the heat sink. In this case, the insulating layer has a surface on a side opposite from the heat sink side. The circuit ¬ carrier also has a metallic wiring layer, which is spray-coated directly on the aforementioned surface of the insulating layer. This conductor layer forms at least one conductor track of the circuit carrier for transmitting electrical current.
Der Kühlkörper kann dabei beispielsweise als ein herkömmlicher Kühlkörper mit Pin-Fin-Struktur oder als ein Abschnitt eines metallischen Gehäuseteils einer elektronischen Baugruppe ausgebildet sein, in dem der Schaltungsträger angeordnet ist. Insbesondere enthält der Kühlkörper im überwiegenden Teil Aluminium oder Aluminiumlegierung, Kupfer oder Kupferlegierung. The heat sink may be formed, for example, as a conventional heat sink with pin-fin structure or as a portion of a metallic housing part of an electronic assembly in which the circuit carrier is arranged. In particular, the heat sink contains predominantly aluminum or aluminum alloy, copper or copper alloy.
Die keramische Isolationsschicht wird in einem thermischen Spritzverfahren, insbesondere in einem atmosphärischen Plasmaspritzverfahren, einem Hochgeschwindigkeitsflammspritzver¬ fahren oder einem Flammspritzverfahren aufgebracht. Dabei kann die Isolationsschicht flächig auf der gesamten Oberfläche des Kühlkörpers oder partiell nur in den Bereichen der Oberfläche des Kühlkörpers angebracht werden, wo die Leiterbahnschicht aus¬ gebildet wird und von dem Kühlkörper elektrisch isoliert werden muss . The ceramic insulating layer is applied in a thermal spraying process, in particular an atmospheric plasma spraying process, a Hochgeschwindigkeitsflammspritzver drive ¬ or a flame spraying method. In this case, the insulating layer can be applied over the entire surface of the heat sink or partially only in the areas of the surface of the heat sink, where the conductor layer is formed from ¬ and must be electrically isolated from the heat sink.
Die metallische Leiterbahnschicht wird vorzugsweise in einem thermischen Spritzverfahren, insbesondere in einem Kaltgas- spritzverfahren oder in einem Plasma-, Flamm- oder The metallic conductor track layer is preferably sprayed in a thermal spraying process, in particular in a cold gas spraying process or in a plasma, flame or
(Hoch- ) geschwindigkeitsflamm-Spritzverfahren, aufgebracht . Dabei bildet diese Leiterbahnschicht eine elektrische Lei¬ terbahnstruktur aus und dient zudem als Haftschicht zur me¬ chanischen Verbindung von den Schaltungskomponenten, wie den Leistungsbauelementen beziehungsweise den Lötpasten, auf dem Kühlkörper . Der Erfindung liegt der Gedanke zugrunde, dass die Kosten bei den elektronischen Baugruppen in erster Linie durch Reduzierung der Komponenten der elektronischen Baugruppen und der Anzahl der notwendigen Fertigungsschritte gespart werden können. (High) velocity flame spraying method applied. Here, this wiring layer forms an electrical Lei ¬ terbahnstruktur and also serves as an adhesion layer for me ¬ chanical connection between the circuit components such as the power components or the solder paste on the heatsink. The invention is based on the idea that the costs can be saved in the electronic assemblies primarily by reducing the components of the electronic modules and the number of necessary manufacturing steps.
So wurde angestrebt, die elektronischen Baugruppen mit möglichst wenigen Komponenten jedoch ohne Einbußen bei Funktionalität und Qualität bei den elektronischen Baugruppen auszuführen. Dabei wurde erkannt, dass auf die herkömmlichen Trägermedien, wie z. B. Platine, Leiterplatten, DCB-Substrate, Keramiksubstrate, gänzlich verzichtet werden kann, wenn die Schaltungskomponenten einer elektronischen Baugruppe, wie die Leistungsbauelemente und Leiterbahnen, direkt auf dem Kühlkörper angeordnet und von dem Kühlkörper mechanisch getragen werden können, der zur Kühlung der Schaltungskomponenten sowieso vorgesehen ist. The aim was to perform the electronic assemblies with as few components as possible without sacrificing functionality and quality in the electronic assemblies. It was recognized that the conventional carrier media, such. As board, circuit boards, DCB substrates, ceramic substrates, can be completely dispensed with, if the circuit components of an electronic module, such as the power components and tracks, can be arranged directly on the heat sink and mechanically supported by the heat sink, which anyway for cooling the circuit components is provided.
Die elektrische Isolation zwischen dem metallischen Kühlkörper und den Schaltungskomponenten kann in einfacher Weise mittels einer Isolationsschicht sichergestellt werden, die zugleich als Verbindungsschicht zur mechanischen Verbindung zwischen dem Kühlkörper und den Schaltungskomponenten dienen kann. The electrical insulation between the metallic heat sink and the circuit components can be ensured in a simple manner by means of an insulating layer, which can also serve as a connection layer for mechanical connection between the heat sink and the circuit components.
Die elektrischen Leiterbahnen für die Schaltungskomponenten können dann unmittelbar auf der Isolationsschicht ausgebildet werden . The electrical tracks for the circuit components can then be formed directly on the insulating layer.
So wurden je eine Isolationsschicht und eine Leiterbahnschicht vorgesehen, die nacheinander unmittelbar auf dem Kühlkörper aufgebracht werden. Thus, an insulating layer and a conductor layer were each provided, which are applied one after the other directly on the heat sink.
Im Rahmen der Erfindung wurde zudem erkannt, dass das thermische Spritzbeschichten die optimale Lösung ist, die Isolations- und die Leiterbahnschicht auf den Kühlkörper aufzubringen und miteinander und auch mit dem Kühlkörper mechanisch stabil zu verbinden . Dadurch, dass die beiden Schichten durch thermische Spritzverfahren aufgebracht werden, können die beiden Schichten in einer und derselben Spritzbeschichtungsanlage nacheinander auf dem Kühlkörper beschichtet werden. Da die Verfahren zur thermischen Spritzbeschichtung zudem als lang erprobte und weit verbreitete Verfahren in verschiedenen Methoden kostengünstig durchführbar sind, kann ein oben beschriebener Schaltungsträger beziehungsweise eine elektronische Baugruppe mit einem der¬ artigen Schaltungsträger auch in einfacher Weise und kosten- günstig hergestellt werden. In the context of the invention, it has additionally been recognized that thermal spray coating is the optimum solution for applying the insulation layer and the conductor layer to the heat sink and for mechanically and stably bonding them to one another and also to the heat sink. The fact that the two layers are applied by thermal spraying, the two layers can be coated in one and the same spray coating system sequentially on the heat sink. Since the processes for thermal spray coating can also be carried out cost-effectively as long-tested and widely used methods in various methods, a circuit carrier or an electronic assembly with one of such circuit carriers described above can also be manufactured in a simple and cost-effective manner.
Damit ist eine Möglichkeit geschaffen, die elektronischen Baugruppen kostengünstig und in einfacher Weise herzustellen. Dabei kann die Isolationsschicht nichtoxidkeramisches Material, wie z. B. Aluminiumnitrid und/oder Siliziumnitrid, enthalten. This creates a possibility to produce the electronic modules cost and easily. In this case, the insulating layer non-oxide ceramic material such. For example, aluminum nitride and / or silicon nitride.
Vorzugsweise enthält die Isolationsschicht jedoch im über¬ wiegenden Teil oxidkeramisches Material, insbesondere Alumi- niumoxid A1203. Insbesondere enthält die Isolationsschicht Aluminiumoxid mit einem Massenanteil von mindestens 75%, vorzugsweise über 85% oder über 90%, insbesondere zwischen 95% und 98%, speziell bei ca. 97%. Vorzugsweise enthält die Isolationsschicht neben dem zuvor genannten keramischen Material wie Aluminiumoxid noch zumindest ein weiteres keramisches Material, insbesondere ein weiteres oxidkeramisches Material, wie z. B. Magnesiumoxid oder Preferably, however, the insulating layer contains via ¬ predominant part of oxide-ceramic material, particularly aluminum oxide A1203. In particular, the insulating layer contains alumina with a mass fraction of at least 75%, preferably more than 85% or more than 90%, in particular between 95% and 98%, especially about 97%. Preferably, the insulating layer contains in addition to the aforementioned ceramic material such as alumina at least one further ceramic material, in particular a further oxide ceramic material, such as. B. magnesium oxide or
Zirkonoxid . Zirconia.
Insbesondere enthält die Isolationsschicht neben Aluminiumoxid noch Titanoxid, speziell Ti02, vorzugsweise mit einem Mas¬ senanteil von bis zu 25%, typischerweise von bis zu 10%, insbesondere zwischen 2% bis 5%, speziell von ca. 3%. In particular, the insulating layer are aluminum oxide contains titanium oxide, especially Ti02, preferably a Mas ¬ phase fraction of up to 25%, typically up to 10%, especially between 2% to 5%, especially from about 3%.
Insbesondere besteht die Isolationsschicht im überwiegenden Teil aus einer Mischung von Aluminiumoxid A1203 und Titanoxid Ti02 mit jeweiligen Massenanteilen von 97% und 3%. Eine Isolationsschicht aus einem Gemisch von A1203 und Ti02 mit den jeweiligen Mas- senanteilanteilen von 97% und 3% ist gegenüber einer Isolationsschicht aus reinem A1203 oder sonstigen keramischen beziehungsweise oxidkeramischen Materialien duktiler und in gewissen Maße elastischer und kann somit Temperaturschwankungen von -40°C bis 150°C besser standhalten. In particular, the insulating layer consists for the most part of a mixture of aluminum oxide A1203 and titanium oxide Ti02 with respective mass fractions of 97% and 3%. An isolation layer from a mixture of A1203 and TiO2 with the respective mass proportions of 97% and 3% is more ductile and to a certain extent more elastic than an insulation layer made of pure A1203 or other ceramic or oxide-ceramic materials and can therefore vary in temperature from -40 ° C to 150 ° C withstand better.
Dabei weist die Isolationsschicht eine Schichtstärke von vorzugsweise über 50 Mikrometer, insbesondere über 100 Mik- rometer, speziell bis 500, 300, oder 200 Mikrometer, typi¬ scherweise von ca. 125 Mikrometer, auf. In this case, specifically to 500 300 has the insulation layer has a layer thickness of preferably more than 50 micrometers, in particular about 100 microns, or 200 microns, typi cally ¬ of about 125 micrometers on.
Die Leiterbahnschicht ist insbesondere als Aluminiumleiter¬ bahnschicht ausgebildet, wobei diese im überwiegenden Teil Aluminium enthält. Vorzugsweise enthält die Leiterbahnschicht Aluminium mit einem Massenanteil von über 90 ~6 , vorzugsweise von über 95%, speziell von über 99%, typischerweise von über 99,5%. The wiring layer is formed in particular as aluminum conductor ¬ web layer, which contains aluminum in major part. The conductor track layer preferably contains aluminum with a mass fraction of more than 90-6, preferably more than 95%, especially more than 99%, typically more than 99.5%.
Die Leiterbahnschicht weist vorzugsweise eine Schichtstärke von über 30 Mikrometer, insbesondere von über 100 Mikrometer, speziell von über 200 Mikrometer, typischerweise von ca. 250 Mikrometer, auf. The wiring layer preferably has a layer thickness of over 30 microns, more preferably over 100 microns, especially over 200 microns, typically about 250 microns.
Die Aluminiumleiterbahnschicht weist eine bessere Haftfes- tigkeit auf einer Schicht aus anderem Material wie z. B. Kupfer auf. Dadurch bildet die Aluminiumleiterbahnschicht neben der funktionsbestimmenden elektrischen Leiterbahnstruktur noch Haftfläche für Bondverbindungen (auf Englisch „Bondcoat") aus. Zusätzlich fungiert die Aluminiumleiterbahnschicht als Haft- schicht zwischen der zuvor beschriebenen Isolationsschicht und einer nachfolgend zu beschreibenden kupferhaltigen Lötschicht, indem die Aluminiumleiterbahnschicht eine Stoffschlüssige stabile mechanische Verbindung zwischen der Isolationsschicht und der Lötschicht herstellt. The aluminum interconnect layer has a better adhesive strength on a layer of other material such. B. on copper. In addition, the aluminum interconnect layer functions as an adhesion layer between the above-described insulation layer and a copper-containing solder layer to be described below, in that the aluminum interconnect layer forms a cohesive, stable mechanical layer Establishment of connection between the insulation layer and the solder layer.
Die Kombination der Isolationsschicht aus Mischung von den beiden zuvor genannten oxidkeramischen Materialien Aluminiumoxid A1203 und Titanoxid Ti02 in jeweiligen Massenanteilanteilen von 97% und 3% sowie der thermisch spritzbeschichteten, insbesondere kaltgasspritzbeschichteten, Leiterbahnsicht aus Aluminium bietet eine sehr gute thermische Zyklenbeständigkeit des Schaltungsträgers und somit eine hohe Lebensdauer bei dem Schaltungsträger. Zudem macht die Kombination der Isolationsschicht und der auf dieser Isolationsschicht spritzbe¬ schichteten, insbesondere kaltgasspritzbeschichteten, Leiterbahnschicht eine Anpassung hinsichtlich der thermischen Ausdehnungskoeffizienten bei der Isolations- und Leiterbahn- schicht überflüssig. The combination of the insulating layer of mixture of the two aforementioned oxide ceramic materials alumina A1203 and titanium oxide Ti02 in respective proportions by weight of 97% and 3% and the thermal spray-coated, in particular cold spray-coated, conductor track view of aluminum offers a very good thermal cycling resistance of the circuit substrate and thus a long service life in the circuit carrier. In addition, the combination of the insulating layer and the spritzbe ¬ coated on this insulating layer, in particular Kaltgasspritzbeschichteten, conductor track layer makes an adjustment in terms of thermal expansion coefficients in the insulation and conductor layer layer superfluous.
Vorzugsweise weist die Leiterbahnschicht auf einer von der Isolationsschicht entgegengesetzten Seite eine Oberfläche auf. Der Schaltungsträger umfasst eine metallische Lötschicht (Lötpads) , die unmittelbar auf der Oberfläche der Leiter¬ bahnschicht spritzbeschichtet, insbesondere kaltgasgespritzt , ist . Preferably, the wiring layer has a surface on a side opposite to the insulation layer. The circuit carrier comprises a metallic solder layer (solder pads), the spray-coated directly on the surface of the printed circuit ¬ web layer, in particular cold gas spraying is.
Dabei enthält die Lötschicht im überwiegenden Teil, also mit einem Massenanteil von mindestens 51%, vorzugsweise 75%, insbesondere 85%, speziell mindestens 99.5%, Kupfer und ist somit für eine Weichlotverbindung bestens geeignet. In this case, the solder layer contains in the predominant part, ie with a mass fraction of at least 51%, preferably 75%, in particular 85%, especially at least 99.5%, copper and is thus ideally suited for a soft solder connection.
Vorzugsweise weist die Lötschicht vorzugsweise eine Schicht- stärke von über 30 Mikrometer, insbesondere über 300 Mikrometer, speziell bis 0.6 Millimeter, 0.7 Millimeter oder 1 Millimeter, typischerweise von ca. 50 Mikrometer, auf. The solder layer preferably preferably has a layer thickness of more than 30 micrometers, in particular more than 300 micrometers, especially up to 0.6 millimeters, 0.7 millimeters or 1 millimeter, typically of about 50 micrometers.
Gemäß einem weiteren Aspekt der Erfindung wird eine elektronische Baugruppe, insbesondere eine Leistungselektronikschaltung, bereitgestellt. Die elektronische Baugruppe umfasst zumindest einen zuvor beschriebenen Schaltungsträger und zumindest ein Leistungsbauelement, das über die Lötschicht mit der Leiter¬ bahnschicht des Schaltungsträgers elektrisch leitend verbunden ist. Dabei ist das Leistungsbauelement lediglich über eine Lötpaste unmittelbar auf der Lötschicht verlötet. Vorzugsweise ist das Leistungsbauelement durch eine Weich¬ lotverbindung auf der Lötschicht verlötet. According to a further aspect of the invention, an electronic assembly, in particular a power electronics circuit, is provided. The electronic module comprises at least one circuit carrier described above and at least one power component, which is electrically conductively connected via the solder layer with the conductor ¬ layer of the circuit substrate. In this case, the power component is soldered only on a solder paste directly on the solder layer. Preferably, the power component is soldered by a soft ¬ solder on the solder layer.
Gemäß einem weiteren Aspekt der Erfindung wird ferner ein Verfahren zum Herstellen eines oben beschriebenen Schaltungsträgers bereitgestellt. Dabei weist das Verfahren folgende Verfahrensschritte auf. Es wird zunächst ein metallischer Kühlkörper, insbesondere ein Aluminiumkühlkörper, mit einer Oberfläche bereitgestellt. Die Oberfläche des Kühlkörpers wird mit einem keramischen Material, insbesondere einem oxidkera¬ mischen Material, vorzugsweise aus Aluminiumoxid, thermisch spritzbeschichtet. Beim thermischen Spritzbeschichten formt sich das Metalloxid auf der Oberfläche des Kühlkörpers zu einer keramischen, insbesondere einer oxidkeramischen, Isolationsschicht. Eine Oberfläche der Isolationsschicht, die auf einer von dem Kühlkörper entgegengesetzten Seite liegt, wird unmittelbar mit einem Metall oder einer Metalllegierung, insbesondere Aluminium oder einer Aluminiumlegierung, ebenfalls thermisch spritzbeschichtet. Dabei formt sich das Metall oder die Me¬ talllegierung auf der Oberfläche der Isolationsschicht zu einer metallischen Leiterbahnschicht, die zumindest eine Leiterbahn zur Übertragung von elektrischem Strom ausbildet. According to a further aspect of the invention, a method for producing a circuit carrier described above is further provided. The method has the following method steps. First, a metallic heat sink, in particular an aluminum heat sink, is provided with a surface. The surface of the heat sink is thermally spray coated with a ceramic material, in particular a oxidkera ¬ mix material, preferably alumina. In thermal spray coating, the metal oxide forms on the surface of the heat sink to form a ceramic, in particular an oxide-ceramic, insulating layer. A surface of the insulating layer lying on a side opposite to the heat sink is also thermally spray-coated with a metal or a metal alloy, especially aluminum or an aluminum alloy. In this case, the metal or Me ¬ talllegierung formed on the surface of the insulation layer to a metal wiring layer that forms at least one conductor track for the transfer of electric current.
Vorzugsweise wird die keramische, insbesondere die oxidkera¬ mische, Isolationsschicht in einem atmosphärischen Plasma¬ spritzverfahren, einem Hochgeschwindigkeitsflammspritzver¬ fahren oder einem Flammspritzverfahren spritzbeschichtet. Preferably, the ceramic, in particular the oxidkera ¬ mix, insulation layer is in an atmospheric plasma spraying method ¬, a Hochgeschwindigkeitsflammspritzver ¬ drive or injection coated with a flame spraying process.
Insbesondere wird die Isolationsschicht partiell nur in Be¬ reichen der Oberfläche des Kühlkörpers angebracht werden, wo die Leiterbahnschicht beziehungsweise die Leiterbahnstruktur ausgebildet wird und somit von dem Kühlkörper elektrisch isoliert werden muss. In particular, the insulating layer will be partially applied only in Be rich ¬ the surface of the heat sink, where the wiring layer or the wiring pattern is formed and thus must be electrically isolated from the heat sink.
Dabei wird die metallische Leiterbahnschicht vorzugsweise in einem Kaltgasspritzvorgang auf der Oberfläche der Isolationsschicht beschichtet. Vorzugsweise wird die Oberfläche der Leiterbahnschicht, die auf einer von der Isolationsschicht entgegengesetzten Seite liegt, ebenfalls mit einem Metall oder einer Metalllegierung, insbesondere Kupfer oder einer Kupferlegierung, spritzbeschichtet, wobei sich das Metall oder die Metalllegierung auf der Oberfläche der Leiterbahnschicht zu einer metallischen Lötschicht zum Löten von beispielsweise einem Leistungsbauelement formt. In this case, the metallic interconnect layer is preferably coated in a cold gas spraying process on the surface of the insulating layer. Preferably, the surface of the wiring layer lying on a side opposite to the insulation layer is also spray-coated with a metal or a metal alloy, especially copper or a copper alloy, whereby the metal or metal alloy on the surface of the wiring layer becomes a metallic solder layer Soldering, for example, a power component forms.
Vorteilhafte Ausgestaltungen des oben beschriebenen Schaltungsträgers sind, soweit im Übrigen auf die oben genannte elektronische Baugruppe oder auf das oben genannte Verfahren übertragbar, auch als vorteilhafte Ausgestaltungen der elektronischen Baugruppe oder des Verfahrens anzusehen. Advantageous embodiments of the circuit substrate described above, as far as applicable to the above-mentioned electronic module or to the above method, are also to be regarded as advantageous embodiments of the electronic module or the method.
Im Folgenden werden beispielhafte Ausführungsformen der Erfindung Bezug nehmend auf die Zeichnungen näher erläutert. Dabei zeigen : In the following, exemplary embodiments of the invention will be explained in more detail with reference to the drawings. Showing:
Figur 1 in einer schematischen Seitenschnittdarstellung eine Figure 1 in a schematic side sectional view of a
Leistungselektronikschaltung mit einem Schaltungsträger gemäß einer Ausführungsform der Erfindung;  Power electronics circuit with a circuit carrier according to an embodiment of the invention;
Figur 2 in einem schematischen Ablaufdiagramm ein Verfahren zum Herstellen eines Schaltungsträgers der in Figur 1 dargestellten Leistungselektronikschaltung . FIG. 2 shows a schematic flowchart of a method for producing a circuit carrier of the power electronics circuit shown in FIG.
Figur 1 zeigt eine Leistungselektronikschaltung LS (also eine elektronische Baugruppe) , die einen Schaltungsträger ST umfasst, auf dem Leistungsbauelemente und elektrische Verbindungen angeordnet und miteinander elektrisch verschaltet sind. FIG. 1 shows a power electronics circuit LS (that is to say an electronic module), which comprises a circuit carrier ST, on which power components and electrical connections are arranged and electrically interconnected.
Der Schaltungsträger ST umfasst einen Aluminiumkühlkörper KK, der ein Abschnitt eines Gehäuses Leistungselektronikschaltung LS ausbildet und auf einer Seite Kühlrippen PF zur Vergrößerung der Kühlfläche des Kühlkörpers KK und somit zur Verbesserung der Kühlungswirkung aufweist. Auf einer von den Kühlrippen PF entgegengesetzt liegenden Seite weist der Kühlkörper KK eine flache Oberfläche OF1 auf, auf der eine Isolationsschicht IS unmittelbar durch Spritzbeschichten aufgetragen ist. Dabei besteht die Isolationsschicht IS überwiegend aus Aluminiumoxid A1203 mit einem Massenanteil von 97% und enthält Titanoxid Ti02 mit einem Massenanteil von 3%. Zudem weist die Isolationsschicht IS eine Schichtstärke von ca. 125 Mikrometer auf. Auf einer von dem Kühlkörper KK entgegengesetzt liegenden Seite weist die Isolationsschicht IS eine Oberfläche OF2 auf, auf der eine Leiterbahnschicht LB unmittelbar durch Spritzbeschichten aufgetragen ist. Dabei enthält die Leiterbahnschicht LB Alu¬ minium mit einem Massenanteil von 99.5% und bildet Leiterbahnen zur elektrischen Verbindungen zwischen Schaltungskomponenten wie z. B. Leistungsbauelementen. Zudem weist die Leiterbahnschicht LB eine Schichtstärke von ca. 250 Mikrometer auf. The circuit carrier ST comprises an aluminum heat sink KK, which forms a portion of a housing power electronics circuit LS and on one side of cooling fins PF to increase the cooling surface of the heat sink KK and thus to improve the cooling effect. On a side opposite the cooling fins PF side, the cooling body KK has a flat surface OF1, on which an insulation layer IS is applied directly by spray coating. The insulating layer IS consists predominantly of aluminum oxide A1203 with a mass fraction of 97% and contains titanium oxide TiO 2 with a mass fraction of 3%. In addition, the insulating layer IS has a layer thickness of about 125 micrometers. On an opposite side of the heat sink KK, the insulating layer IS has a surface OF2 on which a conductor layer LB is applied directly by spray coating. The wiring layer LB aluminum ¬ minium contains a mass fraction of 99.5% and forming conductor tracks for electrical connections between circuit components such. B. power components. In addition, the conductor layer LB has a layer thickness of about 250 microns.
Auf einer von der Isolationsschicht IS entgegengesetzt liegenden Seite weist die Leiterbahnschicht LB eine Oberfläche OF3 auf, auf der eine Lötschicht LF unmittelbar durch Spritzbeschichten aufgetragen ist. Dabei besteht die Lötschicht LF im überwiegenden Teil aus Kupfer und weist eine Schichtstärke von ca. 50 Mikrometer auf . On a side opposite from the insulating layer IS, the conductor track layer LB has a surface OF3 on which a solder layer LF is applied directly by spray coating. In this case, the solder layer LF consists predominantly of copper and has a layer thickness of about 50 microns.
Auf einer von der Leiterbahnschicht LB entgegengesetzt liegenden Oberfläche OF3 der Lötschicht LF ist ein Leistungsbauelement LB mittels einer Lötpaste mit der Lötschicht LF elektrisch leitend und mechanisch verbunden. Über eine Bondverbindung BD ist das Leistungsbauelement LB mit einer Leiterbahn elektrisch leitend verbunden . On a surface OF3 of the solder layer LF opposite from the conductor layer LB, a power component LB is electrically conductively and mechanically connected to the solder layer LF by means of a solder paste. The power component LB is electrically conductively connected to a conductor track via a bond connection BD.
Freiliegende Oberflächen OF1, OF2 , OF3 des Kühlkörpers KK, der Isolationsschicht IS und der Leiterbahnschicht LB sind mit einer Schutzisolierschicht SL verschlossen und von der Umgebung elektrisch isoliert. Figur 2 zeigt ein Verfahren zum Herstellen des in Figur 1 dargestellten Schaltungsträgers ST in einem Ablaufdiagramm. Exposed surfaces OF1, OF2, OF3 of the heat sink KK, the insulation layer IS and the wiring layer LB are sealed with a protective insulating layer SL and electrically isolated from the environment. FIG. 2 shows a method for producing the circuit carrier ST shown in FIG. 1 in a flow chart.
Gemäß einem Verfahrensschritt S100 wird zunächst auf der Oberfläche OFl des Aluminiumkühlkörpers KK Pulver aus einem Gemisch von Aluminiumoxid A1203 und Titanoxid Ti02 in einem atmosphärischen Plasmaspritzverfahren aufgetragen. Nach dem Applizieren beziehungsweise Aufbringen auf der Oberfläche OFl des Aluminiumkühlkörpers KK bildet das Gemisch die oxidkera- mische Isolationsschicht IS. According to a method step S100, powder of a mixture of aluminum oxide A1203 and titanium oxide TiO 2 is first applied on the surface OF1 of the aluminum cooling body KK in an atmospheric plasma spraying process. After application or application on the surface OF1 of the aluminum heat sink KK, the mixture forms the oxide-ceramic insulation layer IS.
Nach dem Aufbringen der Isolationsschicht IS wird auf der Oberfläche OF2 der Isolationsschicht IS Pulver aus Aluminium gemäß einem weiteren Verfahrensschritt S200 in einem weiteren Kaltspritzverfahren aufgetragen. Dadurch bildet das Aluminiumpulver die Leiterbahnschicht LB. After the application of the insulating layer IS, aluminum powder is deposited on the surface OF2 of the insulating layer IS according to a further method step S200 in a further cold spraying process. As a result, the aluminum powder forms the conductor layer LB.
Nach dem Aufbringen der Leiterbahnschicht LB wird auf der Oberfläche OF3 der Leiterbahnschicht LB Pulver aus Kupfer gemäß einem weiteren Verfahrensschritt S300 in einem weiteren After the application of the conductor layer LB, powder of copper is deposited on the surface OF3 of the conductor layer LB according to a further method step S300 in another
Kaltspritzverfahren aufgetragen. Nach dem Auftragen bildet das Kupferpulver die Lötschicht LF aus.  Cold spraying applied. After application, the copper powder forms the solder layer LF.

Claims

Patentansprüche claims
Schaltungsträger (ST), mit folgenden Merkmalen: Circuit carrier (ST), having the following features:
einen metallischen Kühlkörper (KK) ;  a metallic heat sink (KK);
eine unmittelbar auf der Oberfläche (OF1) des  one directly on the surface (OF1) of the
Kühlkörpers (KK) thermisch spritzbeschichtete ke¬ ramische Isolationsschicht (IS), wobei die Isola¬ tionsschicht (IS) auf einer von dem Kühlkörper (KK) entgegengesetzten Seite eine Oberfläche (OF2) auf¬ weist; Heatsink (KK) thermally spray-coated ke ¬ ramische insulation layer (IS), wherein the Isola ¬ tion layer (IS) on one of the heat sink (KK) opposite side has a surface (OF2) ¬ ;
eine unmittelbar auf der Oberfläche (OF2) der Isolationsschicht (IS) thermisch spritzbeschichtete metallische Leiterbahnschicht (LB) , die zumindest eine Leiterbahn des Schaltungsträgers (ST) zum Übertragen von elektrischem Strom ausbildet.  a metallic conductor track layer (LB) which is thermally spray-coated directly on the surface (OF2) of the insulation layer (IS) and forms at least one conductor track of the circuit carrier (ST) for transmitting electrical current.
Schaltungsträger (ST) nach Anspruch 1, wobei die Isolationsschicht (IS) im überwiegenden Teil oxidkeramisches Material, insbesondere Aluminiumoxid (A1203) enthält. Circuit carrier (ST) according to claim 1, wherein the insulating layer (IS) contains in the majority of oxide ceramic material, in particular aluminum oxide (A1203).
Schaltungsträger (ST) nach Anspruch 2, wobei die Isolationsschicht (IS) Aluminiumoxid mit einem Massenanteil von mindestens 75%, vorzugsweise über 85% oder 90%, insbe¬ sondere über 95%, speziell bei ca. 97%, enthält. Circuit carrier (ST) according to claim 2, wherein the insulating layer (IS) alumina having a mass fraction of at least 75%, preferably about 85% or 90%, in particular ¬ sondere than 95%, especially at about 97%, contains.
4. Schaltungsträger (ST) nach einem der vorangehenden Ansprüche, wobei die Isolationsschicht (IS) ein weiteres keramisches Material, insbesondere ein weiteres oxidke¬ ramisches Material, vorzugsweise Titanoxid (Ti02), ent- hält. 4. circuit carrier (ST) according to one of the preceding claims, wherein the insulating layer (IS) contains a further ceramic material, in particular a further oxidke ¬ ramisches material, preferably titanium oxide (TiO 2), contains.
5. Schaltungsträger (ST) nach Anspruch 4, wobei die Isolationsschicht (IS) Titanoxid mit einem Massenanteil von bis zu 25%, vorzugsweise von bis zu 10%, insbesondere von bis zu 5% / typischerweise von ca. 3%, enthält. 5. The circuit carrier (ST) according to claim 4, wherein the insulating layer (IS) contains titanium oxide with a mass fraction of up to 25%, preferably of up to 10%, in particular of up to 5% / typically of about 3%.
6. Schaltungsträger (ST) nach einem der vorangehenden Ansprüche, wobei die Isolationsschicht (IS) eine Schicht- stärke von über 50 Mikrometer, insbesondere über 100 Mikrometer, speziell bis 500, 300, oder 200 Mikrometer, typischerweise von ca. 125 Mikrometer, aufweist. 6. circuit carrier (ST) according to one of the preceding claims, wherein the insulating layer (IS) a layer thickness of over 50 microns, especially over 100 microns, especially up to 500, 300, or 200 microns, typically of about 125 microns.
Schaltungsträger (ST) nach einem der vorangehenden Ansprüche, wobei die Leiterbahnschicht (LB) im überwiegenden Teil Aluminium, insbesondere Aluminium mit einem Massenanteil von über 90%, vorzugsweise von über 95%, speziell von über 99%, typischerweise von über 99.5%, enthält. Circuit carrier (ST) according to one of the preceding claims, wherein the conductor track layer (LB) contains predominantly aluminum, in particular aluminum with a mass fraction of more than 90%, preferably more than 95%, especially more than 99%, typically more than 99.5% ,
Schaltungsträger (ST) nach einem der vorangehenden Ansprüche, wobei die Leiterbahnschicht (LB) eine Schicht¬ stärke von über 30 Mikrometer, insbesondere von über 100 Mikrometer, speziell von über 200 Mikrometer, typischerweise von ca. 250 Mikrometer, aufweist. Circuit carrier (ST) according to one of the preceding claims, wherein the conductor track layer (LB) has a layer thickness ¬ of more than 30 microns, in particular of over 100 microns, especially of over 200 microns, typically of about 250 microns.
Schaltungsträger (ST) nach einem der vorangehenden Ansprüche, wobei die Leiterbahnschicht (LB) auf einer von der Isolationsschicht (IS) entgegengesetzten Seite eine Oberfläche (OF3) aufweist, wobei der Schaltungsträger (ST) eine unmittelbar auf der Oberfläche (OF3) der Leiterbahnschicht (LB) spritzbeschichtete metallische Lötschicht (LF) umfasst. Circuit carrier (ST) according to one of the preceding claims, wherein the interconnect layer (LB) on one of the insulating layer (IS) opposite side has a surface (OF3), wherein the circuit carrier (ST) directly on the surface (OF3) of the conductor layer ( LB) comprises a spray-coated metallic solder layer (LF).
Schaltungsträger (ST) nach Anspruch 9, wobei die Lötschicht (LF) zur Weichlotverbindung eingerichtet ist. Circuit carrier (ST) according to claim 9, wherein the solder layer (LF) is adapted for soft solder connection.
Schaltungsträger (ST) nach Anspruch 9 oder 10, wobei die Lötschicht (LF) im überwiegenden Teil Kupfer enthält. Circuit carrier (ST) according to claim 9 or 10, wherein the solder layer (LF) contains predominantly copper.
Schaltungsträger (ST) nach einem der Ansprüche 9 bis 11, wobei die Lötschicht (LF) eine Schichtstärke von über 30 Mikrometer, insbesondere über 300 Mikrometer, speziell bis 0.6 Millimeter, 0.7 Millimeter oder 1 Millimeter, typischerweise von ca. 50 Mikrometer, aufweist. Circuit carrier (ST) according to one of claims 9 to 11, wherein the solder layer (LF) has a layer thickness of about 30 microns, in particular over 300 microns, especially up to 0.6 millimeters, 0.7 millimeters or 1 millimeter, typically of about 50 microns.
Elektronische Baugruppe (LS) , insbesondere Leistungs¬ elektronikschaltung, umfassend zumindest einen Schal- tungsträger (ST) nach einem der Ansprüche 9 bis 12, wobei die elektronische Baugruppe (LS) zumindest ein Leis¬ tungsbauelement (BE) aufweist, das über die Lötschicht (LF) mit der Leiterbahnschicht (LB) elektrisch leitend verbunden ist . Electronic assembly (LS), in particular power ¬ electronic circuit, comprising at least one formwork tung carrier (ST) according to one of claims 9 to 12, wherein the electronic module (LS) at least one Leis ¬ processing device (BE), which is via the solder layer (LF) having the wiring layer (LB) is electrically conductively connected.
Verfahren zum Herstellen eines Schaltungsträgers (ST) , wobei das Verfahren folgende Verfahrensschritte aufweist: Method for producing a circuit carrier (ST), the method comprising the following method steps:
Thermisches Spritzbeschichten (S100) von einem keramischen Material, insbesondere einem oxidkeramischen Material unmittelbar auf einer Oberfläche (OF1) eines metallischen Kühlkörpers (KK) und Bilden einer keramischen, insbesondere einer oxidkeramischen, Isolationsschicht (IS);  Thermal spray coating (S100) of a ceramic material, in particular an oxide ceramic material directly on a surface (OF1) of a metallic heat sink (KK) and forming a ceramic, in particular an oxide ceramic, insulating layer (IS);
Thermisches Spritzbeschichten (S200) von einem Metall oder einer Metalllegierung unmittelbar auf einer Oberfläche (OF2) der Isolationsschicht (IS), die auf einer von dem Kühlkörper (KK) entgegengesetzten Seite liegt, und Bilden einer metallischen Leiterbahnschicht (LB) , die zumindest eine Leiterbahn zum Übertragen von elektrischem Strom ausbildet.  Thermal spray coating (S200) of a metal or a metal alloy directly on a surface (OF2) of the insulating layer (IS) lying on a side opposite from the heat sink (KK), and forming a metallic wiring layer (LB) comprising at least one conductor track for transmitting electric power.
Verfahren nach Anspruch 14, wobei die keramische, insbesondere die oxidkeramische, Isolationsschicht (IS) in einem atmosphärischen Plasmaspritzverfahren, einem The method of claim 14, wherein the ceramic, in particular the oxide ceramic, insulating layer (IS) in an atmospheric plasma spraying process, a
Hochgeschwindigkeitsflammspritzverfahren oder einem Flammspritzverfahren spritzbeschichtet wird. High-speed flame spraying or a flame spraying method is spray-coated.
Verfahren nach Anspruch 14 oder 15, wobei die Isolationsschicht (IS) partiell nur in Bereichen der Oberfläche (OF1) des Kühlkörpers (KK) angebracht werden, wo die Leiterbahnschicht (LB) ausgebildet wird und von dem Kühlkörper (KK) elektrisch isoliert werden muss. The method of claim 14 or 15, wherein the insulating layer (IS) are partially mounted only in areas of the surface (OF1) of the heat sink (KK), where the conductor layer (LB) is formed and must be electrically isolated from the heat sink (KK).
Verfahren nach einem der Ansprüche 14 bis 16, wobei die metallische Leiterbahnschicht (LB) in einem Kaltgas¬ spritzvorgang auf der Oberfläche (OF2) der Isolations¬ schicht (IS) spritzbeschichtet wird. Verfahren nach Anspruch einem der Ansprüche 14 bis 17, ferner mit einem folgenden Verfahrensschritt: Method according to one of claims 14 to 16, wherein the metallic interconnect layer (LB) in a cold gas ¬ injection process on the surface (OF2) of the insulation ¬ layer (IS) is spray-coated. A method according to any one of claims 14 to 17, further comprising a method step:
Spritzbeschichten (S300) von einem Metall oder einer Metalllegierung unmittelbar auf einer Oberfläche (OF3) der Leiterbahnschicht (LB) , die auf einer von der Isolationsschicht (IS) entgegengesetzten Seite liegt, und Bilden einer metallischen Lötschicht (LF) .  Spray-coating (S300) a metal or a metal alloy immediately on a surface (OF3) of the wiring layer (LB) lying on an opposite side of the insulation layer (IS), and forming a metallic solder layer (LF).
PCT/EP2015/067052 2014-07-28 2015-07-24 Circuit carrier, electronic assembly, method for producing a circuit carrier WO2016016140A1 (en)

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