EP1719220A4 - Procedes de commande de polarisation pour lasers a cavite verticale et a emission par la surface (vcsel) - Google Patents

Procedes de commande de polarisation pour lasers a cavite verticale et a emission par la surface (vcsel)

Info

Publication number
EP1719220A4
EP1719220A4 EP05723667A EP05723667A EP1719220A4 EP 1719220 A4 EP1719220 A4 EP 1719220A4 EP 05723667 A EP05723667 A EP 05723667A EP 05723667 A EP05723667 A EP 05723667A EP 1719220 A4 EP1719220 A4 EP 1719220A4
Authority
EP
European Patent Office
Prior art keywords
stress
vcsel
mirror stack
inducing element
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05723667A
Other languages
German (de)
English (en)
Other versions
EP1719220A2 (fr
Inventor
Jin Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Finisar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp filed Critical Finisar Corp
Publication of EP1719220A2 publication Critical patent/EP1719220A2/fr
Publication of EP1719220A4 publication Critical patent/EP1719220A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution

Definitions

  • the present invention pertains to lasers and particularly to vertical cavity surface emitting lasers (VCSELS). More particularly, the invention pertains to polarization control of VCSELS. Polarization stability over the operating range is desirable for semiconductor lasers in communications and other applications. However, vertical-cavity surface- emitting lasers, due to their symmetry, usually do not meet this condition of a stable polarized output. SUMMARY The present invention describes devices and techniques that may he implemented to introduce polarization stability in VCSELS.
  • VCSEL output polarization may be achieved by breaking the optical-loss and/or optical-gain symmetry of a VCSEL in the two orthogonal in-plane directions. Stress-inducing features may be formed on the top or bottom surface of a VCSEL, on the side of a VCSEL, or within a VCSEL to produce a break in its symmetry of stresses to effect a polarizing influence upon an output of the VCSEL. Compactness and compatibility of the invention with existing production methods may add to the usefulness of the techniques of this invention.
  • Figure 1 is a perspective of an illustrative VCSEL
  • Figure 2 is a sectional view of the VCSEL of Figure 1
  • Figures 3 a, 3b and 3 c illustrate induced polarization with stress plates on top of the VCSEL
  • Figures 4a, 4b and 4c illustrate induced polarization with stress plates on the sides of the VCSEL
  • Figures 5a, 5b and 5c illustrate induced polarization with stress elements in the layer portions of the VCSEL
  • Figures 6a, 6b and 6c illustrate induced polarization with portions of the stack etched away and stress elements in the layer portions of the VCSEL
  • Figures 7a, 7b and 7c illustrate induced polarization with just portions of the stack etched away.
  • FIGS. 1 and 2 illustrate an example of a planar, current-guided, vertical cavity surface emitting laser (VCSEL) 10 having periodic layer pairs for top and bottom distributed Bragg reflector (DBR) mirror stacks, that may use the polarization control of the present invention.
  • VCSEL vertical cavity surface emitting laser
  • DBR distributed Bragg reflector
  • Formed on the bottom of a substrate 14 may be a bottom contact 12.
  • Substrate 14 may be doped with impurities of a first type.
  • a first-type doped mirror stack 16 may be formed on substrate 14.
  • Formed on stack 16 may be a first-type doped spacer layer 20.
  • the first-type doped bottom spacer layer 20 and a second-type doped top spacer layer 24 may sandwich an active region 22.
  • a second-type doped mirror stack 26 may be formed on a top spacer layer 24.
  • a metal layer 28 may be formed as a contact on a portion of stack 26 at an interface 32.
  • the emission region may have a passivation layer 30.
  • An isolation region 29 may restrict the area of the current flow 27 through the active region. Region 29 may be formed by an ion implantation and/or oxidation.
  • a diameter 13 may be set to provide the desired active area, and thus the gain aperture of the VCSEL 10. Further, a diameter 11 of an aperture 34 for light 31 may be set by the resistance of the second-type doped mirror stack 26, particularly through the non- conductive region 29. Thus, non-conductive region 29 may perform the gain guiding function. Diameter 13 may be limited by fabrication limitations, such as lateral straggle during the implantation or oxidation step. The present apparatus and method for providing stable polarization control of a
  • VCSEL output are simpler, more effective and easier to make and put into effect than other devices and approaches in the related art.
  • the present approach and apparatus may involve using polarization inducing stress components applied in or on VCSEL 10 in various ways, as long as the induced stress results in different stresses in two orthogonal in-plane directions.
  • Various configurations of polarization control are implemented with an example of a VCSEL for illustrative purposes.
  • Certain VCSEL components, such as contact metals are omitted in some of the illustrative figures for simplicity.
  • the material type, size, shape, number, orientation and placement of the components may be of various kinds since those factors do not detract from of the invention.
  • Figures 3a, 3b and 3c show the application of strain or stress elements (stressors) 41 on top of a VCSEL 40. Even though VCSELS in the figures are circular, they may be square, rectangular or another shape. Elements 41 may be applied on the top or bottom of VCSEL 40. Elements 41 may be patterned dielectric material such as silicon nitride or silicon dioxide. Elements 41 may also be a metal or other appropriate stress causing material. The material of elements 41 may or may not be lattice-mismatched relative to the VCSEL. Elements 41 may be deposited or grown with a pattern of a mask on the VCSEL surface 42.
  • the material for elements 41 may be deposited with an etch stop under it and the patterns may be etched with a mask applied on the deposited material.
  • the strain or stress-inducing elements 41 may be placed on and attached to the top of surface 42 or be recessed slightly into top surface 42. Only one element 41 may be used for inducing the asymmetric stress in VCSEL 40.
  • the induced stress may be an expansive stress 43 or a compressive stress 44 applied to the VCSEL, as long as the stresses within the VCSEL are different in two orthogonal directions in a plane parallel to surface 42. That is, the stresses, whether positive or negative, are different from stress 45 which may be natural and have a direction orthogonal to the direction of stress 43 or 44. This stress differential may induce a stable polarization of an output 31 from VCSEL 40.
  • strain or stress inducing elements stressors
  • Elements 51 may be applied to or deposited on opposing sides of the VCSEL, as illustrated in Figures 4a, 4b and 4c. Elements 51 may be patterned dielectrics, oxidized materials, metals or other items. Stress inducing elements 51 may be attached to the external side surface of VCSEL 50 or be recessed slightly into the side surface of the VCSEL. Stress 53 or 54 may be on the side of the top mirror and extend down to the bottom of a trench, mesa or some place of structural interference. . Stress 53 or 54 may occur upon the attachment or deposit of elements 51. Instead, only one element 51 may be attached or deposited. Resultant stresses 53 or 54 and 55 caused by elements 51 in the VCSEL 50 structure may be different in the two orthogonal directions in a plane parallel to surface 52.
  • strain or stress inducing elements (stressors) 61 may be situated in the VCSEL side and applied to various layers of a DBR mirror of the VCSEL 60, as illustrated in Figures 5a, 5b and 5c. These elements 61 may be oxidized portions 67 of layers in the upper DBR mirror stack of VCSEL 60. Portions 67 of layers in the lower DBR mirror stack may also be oxidized to effect a stress on VCSEL 60. Oxidation of layers may be discussed in U.S. Patent No.
  • low index layers of an AlGaAs DBR or other layers may be selectively oxidized in the opposite sides of the VCSEL 60.
  • the resultant stress 63 or 64 and stress 65 in the VCSEL 60 structure may be different in two orthogonal directions in a plane parallel to the surface 62, as shown in Figure 5b. This stress differential relative to the two orthogonal directions may be sufficiently significant to induce a stable polarization in an output 31 of VCSEL 60.
  • strain or stress inducing elements stressors
  • 71 may be situated in the VCSEL side and applied to various layers of a DBR mirror of the VCSEL, as illustrated in Figures 6a, 6b and 6c. These elements 71 may be oxidized portions of layers in the upper and/or lower DBR mirror stacks of VCSEL 70.
  • low index layers of an AlGaAs DBR or other layers may have portions 77 selectively oxidized or etched out of two sides diametrically opposed to each other in VCSEL 70.
  • selectively etched portions 77 of the layers in the sides of the VCSEL 70 may be filled in with another material such as a dielectric or metal resulting in elements 71 to induce a stress 73 or 74 in VCSEL 70.
  • portions 77 layers on just one side may be oxidized or etched out and filled in with a stress-causing material.
  • portions on the other sides of VCSEL 70 creating voids 76 may be removed from the original profile 78 of the VCSEL to result in more stress-inducing elements 71 on the other sides of VCSEL 70.
  • the induced stress of elements 71 may cause the resultant stress 73 or 74 and stress 75 in the VCSEL 70 structure to be different in two orthogonal directions in a plane parallel to the surface 72, as shown in Figure 6b. This stress differential relative to the two orthogonal directions may be sufficiently significant to induce a stable polarization in an output 31 of VCSEL 70.
  • strain or stress inducing elements (stressors) 81 may involve just the removal of portions of layers from the DBR mirror stack resulting in stress-causing voids 86 situated at the VCSEL sides, as illustrated in Figures 7a, 7b and 7c.
  • the resultant VCSEL 80 may have an asymmetrical shape such as an oblong one in the case of an originally round VCSEL as shown by profile 88.
  • These elements 81 may be on one side or on both sides diametrically across from each other in the VCSEL. The removal or etching away portions of layers may apply to the upper DBR mirror stack of VCSEL 80.
  • Some removal of material from the VCSEL may also occur in the lower mirror as voids 86 to form elements 81, at least where it is possible before reaching a structure interruption such as the bottom of a trench or a mesa.
  • Element or elements 81 may induce a stress 83 or 84 in VCSEL 80.
  • the resultant stress 83 or 84 and stress 85 in the VCSEL 80 structure may be different in two orthogonal directions in a plane parallel to the surface 82, as shown in Figure 7b. This stress differential relative to the two orthogonal directions may be sufficiently significant to induce a stable polarization in an output 31 of VCSEL 80.
  • One or more strain or stress inducing elements may be used to effect an asymmetry of stress distribution in the laser system or VCSEL.
  • a stress inducing element may be one of those disclosed in this description or may of another kind that may induce a stress in the laser system or VCSEL.
  • Various combinations of different kinds of stress-inducing elements may be used for causing an asymmetry in the stress distribution in a laser or VCSEL, such as in one of its mirror stacks. Such asymmetry of a distribution of stresses may cause an effective polarization of light emitted by the laser system or device.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Cette invention concerne un laser à cavité verticale et à émission par la surface (VCSEL) auquel on a ajouté des éléments de contrainte ou de tension à des fins de stabilité de la commande de polarisation. Ces éléments peuvent perturber la tension symétrique de la structure VCSEL et induire une commande de polarisation stable de la sortie. De tels éléments peuvent être montés sur la surface supérieure ou sur les côtés du VCSEL, ou bien être insérés dans certaines couches de la structure VCSEL. Dans le cas de certains éléments, il faudra éventuellement retirer un partie du matériau sur le côtés du VCSEL.
EP05723667A 2004-02-25 2005-02-25 Procedes de commande de polarisation pour lasers a cavite verticale et a emission par la surface (vcsel) Withdrawn EP1719220A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78620304A 2004-02-25 2004-02-25
PCT/US2005/005894 WO2005082010A2 (fr) 2004-02-25 2005-02-25 Procedes de commande de polarisation pour lasers a cavite verticale et a emission par la surface (vcsel)

Publications (2)

Publication Number Publication Date
EP1719220A2 EP1719220A2 (fr) 2006-11-08
EP1719220A4 true EP1719220A4 (fr) 2008-08-06

Family

ID=34911289

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05723667A Withdrawn EP1719220A4 (fr) 2004-02-25 2005-02-25 Procedes de commande de polarisation pour lasers a cavite verticale et a emission par la surface (vcsel)

Country Status (3)

Country Link
EP (1) EP1719220A4 (fr)
CA (1) CA2556709A1 (fr)
WO (1) WO2005082010A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5532321B2 (ja) * 2009-11-17 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5527714B2 (ja) 2009-11-18 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5532239B2 (ja) * 2009-11-26 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
CN102447220A (zh) * 2010-09-30 2012-05-09 新科实业有限公司 面发光型半导体激光器及其制造方法
JP5874227B2 (ja) * 2011-07-22 2016-03-02 富士ゼロックス株式会社 面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
CN103414105A (zh) * 2013-07-13 2013-11-27 北京工业大学 一种单横模偏振稳定的垂直腔面发射激光器
JP2015119140A (ja) * 2013-12-20 2015-06-25 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
JP6274404B2 (ja) * 2013-12-20 2018-02-07 セイコーエプソン株式会社 面発光レーザーおよび原子発振器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330630A (ja) * 1998-03-11 1999-11-30 Seiko Epson Corp 面発光型半導体レーザ及びその製造方法
JP2000353858A (ja) * 1999-06-14 2000-12-19 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザとその作製方法
EP1104056A1 (fr) * 1999-11-18 2001-05-30 Avalon Photonics Ltd Laser à émission de surface à cavité verticale à contrôle de polarisation
US6603783B1 (en) * 1997-07-29 2003-08-05 Seiko Epson Corporation Surface emitting type semiconductor laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331654A (en) * 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US6002705A (en) * 1997-12-03 1999-12-14 Xerox Corporation Wavelength and polarization multiplexed vertical cavity surface emitting lasers
JP3791584B2 (ja) * 1999-12-28 2006-06-28 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603783B1 (en) * 1997-07-29 2003-08-05 Seiko Epson Corporation Surface emitting type semiconductor laser
JPH11330630A (ja) * 1998-03-11 1999-11-30 Seiko Epson Corp 面発光型半導体レーザ及びその製造方法
JP2000353858A (ja) * 1999-06-14 2000-12-19 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザとその作製方法
EP1104056A1 (fr) * 1999-11-18 2001-05-30 Avalon Photonics Ltd Laser à émission de surface à cavité verticale à contrôle de polarisation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
STREUBEL K ET AL: "1.26 [micro]m vertical cavity laser with two InP/air-gap reflectors", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 32, no. 15, 18 July 1996 (1996-07-18), pages 1369 - 1370, XP006005428, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
WO2005082010A2 (fr) 2005-09-09
CA2556709A1 (fr) 2005-09-09
EP1719220A2 (fr) 2006-11-08
WO2005082010A3 (fr) 2006-01-26

Similar Documents

Publication Publication Date Title
US7160749B2 (en) Method and structure for eliminating polarization instability in laterally—oxidized VCSELs
WO2005082010A2 (fr) Procedes de commande de polarisation pour lasers a cavite verticale et a emission par la surface (vcsel)
KR0178492B1 (ko) 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
TWI429152B (zh) 垂直空腔表面發射雷射系統及其製造方法
US6885690B2 (en) Transverse mode and polarization control of surface emitting lasers through the formation of a dielectric stack
JP4275948B2 (ja) Ｖｃｓｅｌにおける横断バンドギャップ構造を使用するモードの制御
EP2169790B1 (fr) Laser à émission sur surface et son procédé de fabrication
US6297068B1 (en) Method for highly compact vertical cavity surface emitting lasers
US7244629B2 (en) Vertical cavity surface emitting laser diode and method for manufacturing the same
US5953362A (en) Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same
EP1363369B1 (fr) Réseau monolithique à longueurs d&#39;ondes multiples de lasers à cavité verticale à émission par la surface et méthode de fabrication associée
US20030031221A1 (en) Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
KR100622852B1 (ko) 마이크로-전기기계적으로 조정가능한 수직 캐비티 광소자 및 그 제조 방법
JPH1154838A (ja) 面発光型半導体レーザ
JP2007208127A (ja) ２次元フォトニック結晶面発光レーザ
GB2377318A (en) Vertical Cavity Surface Emitting Laser
CA2380742A1 (fr) Lasers a cavite verticale et a emission par la surface (vcsel), semi-symetriques, a reglage microelectromecanique, fonctionnant en mode unique
US7333522B2 (en) Polarization control of vertical diode lasers by monolithically integrated surface grating
US5388120A (en) VCSEL with unstable resonator
JP4752201B2 (ja) 面発光型半導体レーザ装置およびその製造方法
TW589771B (en) Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide
EP1104056A1 (fr) Laser à émission de surface à cavité verticale à contrôle de polarisation
EP2033281B1 (fr) Procédé de fabrication d&#39;un laser a cavité verticale et à émission par la surface à cristal photonique ou à bande interdite photonique
JP3422413B2 (ja) 面発光型レーザアレイ及びその製造方法
KR100319752B1 (ko) 편광조절 표면방출 레이저소자 및 그 제조방법

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20060825

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

R17D Deferred search report published (corrected)

Effective date: 20060330

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20080707

17Q First examination report despatched

Effective date: 20081002

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20090213