EP1680278B1 - Pluralite de couches limites - Google Patents

Pluralite de couches limites Download PDF

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Publication number
EP1680278B1
EP1680278B1 EP03759379A EP03759379A EP1680278B1 EP 1680278 B1 EP1680278 B1 EP 1680278B1 EP 03759379 A EP03759379 A EP 03759379A EP 03759379 A EP03759379 A EP 03759379A EP 1680278 B1 EP1680278 B1 EP 1680278B1
Authority
EP
European Patent Office
Prior art keywords
layer
layers
cover layer
ejection device
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03759379A
Other languages
German (de)
English (en)
Other versions
EP1680278A1 (fr
Inventor
Joe Stout
Thomas R. Strand
Jeremy H. Donaldson
Paul J. Benning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
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Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of EP1680278A1 publication Critical patent/EP1680278A1/fr
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Publication of EP1680278B1 publication Critical patent/EP1680278B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1629Manufacturing processes etching wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14016Structure of bubble jet print heads
    • B41J2/14088Structure of heating means
    • B41J2/14112Resistive element
    • B41J2/14129Layer structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1601Production of bubble jet print heads
    • B41J2/1603Production of bubble jet print heads of the front shooter type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1628Manufacturing processes etching dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1631Manufacturing processes photolithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1632Manufacturing processes machining
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1632Manufacturing processes machining
    • B41J2/1634Manufacturing processes machining laser machining

Definitions

  • the present invention relates to fluid ejection devices, and more particularly to a plurality of barrier layers in a fluid ejection device.
  • thermal actuated printheads tend to use resistive elements or the like to achieve ink expulsion
  • mechanically actuated printheads tend to use piezoelectric transducers or the like.
  • a representative thermal inkjet printhead has a plurality of thin film resistors provided on a semiconductor substrate.
  • a barrier layer is deposited over thin film layers on the substrate. The barrier layer defines firing chambers about each of the resistors, an orifice corresponding to each resistor, and an entrance or fluid channel to each firing chamber.
  • ink is provided through a slot in the substrate and flows through the fluid channel defined by the nozzle layer to the firing chamber. Actuation of a heater resistor by a "fire signal" causes ink in the corresponding firing chamber to be heated and expelled through the corresponding orifice.
  • nozzle layer delamination may occur due to mechanical or thermal stresses.
  • the nozzle layer has a different coefficient of thermal expansion than that of the semiconductor substrate.
  • the thermal stresses may lead to delamination of the nozzle layer, or other thin film layers, ultimately leading to ink leakage and/or electrical shorts.
  • the nozzle layer can undergo stresses due to nozzle layer shrinkage after curing of the layer, structural adhesive shrinkage during assembly of the nozzle layer, handling of the device, and thermal cycling of the fluid ejection device.
  • a fluid ejection device comprises a substrate having a first surface; a fluid ejector formed over the first surface; and a cover layer defining a firing chamber formed about the fluid ejector, and defining a nozzle over the firing chamber.
  • the cover layer is formed by at least two SU8 layers.
  • Fig. 1 is a perspective view of an embodiment of a cartridge 101 having a fluid ejection device 103, such as a printhead.
  • the cartridge houses a fluid supply, such as ink. Visible at the outer surface of the printhead are a plurality of orifices or nozzles 105 through which fluid is selectively expelled. In one embodiment, the fluid is expelled upon commands of a printer (not shown) communicated to the printhead through electrical connections 107.
  • Fig. 2 illustrates a cross-sectional view of the printhead 103 of Fig. 1 where a slot 110 is formed through a substrate 115.
  • Some of the embodiments used in forming the slot through a slot region (or slot area) in the substrate include wet etching, dry etching, DRIE, and UV laser machining.
  • the substrate 115 is silicon.
  • the substrate is one of the following: single crystalline silicon, polycrystalline silicon, gallium arsenide, glass, silica, ceramics, or a semiconducting material.
  • single crystalline silicon polycrystalline silicon
  • gallium arsenide glass
  • silica silica
  • ceramics or a semiconducting material.
  • the various materials listed as possible substrate materials are not necessarily interchangeable and are selected depending upon the application for which they are to be used.
  • a thin film stack 116 (such as an active layer, an electrically conductive layer, and a layer with micro-electronics) is formed or deposited on a front or first side (or surface) of the substrate 115.
  • the thin film stack 116 includes a capping layer 117 formed over a first surface of the substrate.
  • Capping layer 117 may be formed of a variety of different materials such as field oxide, silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass (PSG).
  • a layer 119 is deposited or grown over the capping layer 117.
  • the layer 119 is one of titanium nitride, titanium tungsten, titanium, a titanium alloy, a metal nitride, tantalum aluminum, and aluminum silicon.
  • a conductive layer 121 is formed by depositing conductive material over the layer 119.
  • the conductive material is formed of at least one of a variety of different materials including aluminum, aluminum with about 1 ⁇ 2 % copper, copper, gold, and aluminum with 1 ⁇ 2% silicon, and may be deposited by any method, such as sputtering and evaporation.
  • the conductive layer 121 is patterned and etched to form conductive traces.
  • a resistive material 125 is deposited over the etched conductive material 121.
  • the resistive material is etched to form an ejection element 201, such as a fluid ejector, a resistor, a heating element, and a bubble generator.
  • resistive materials are known to those of skill in the art including tantalum aluminum, nickel chromium, tungsten silicon nitride, and titanium nitride, which may optionally be doped with suitable impurities such as oxygen, nitrogen, and carbon, to adjust the resistivity of the material.
  • the thin film stack 116 further includes an insulating passivation layer 127 formed over the resistive material.
  • Passivation layer 127 may be formed of any suitable material such as silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass.
  • a cavitation layer 129 is added over the passivation layer 127.
  • the cavitation layer is tantalum.
  • a cover layer such as a barrier layer, 124 is deposited over the thin film stack 116, in particular, the cavitation layer 129.
  • the cover layer 124 is a layer comprised of a fast cross-linking polymer such as photoimagable epoxy (such as SU8 developed by IBM), photoimagable polymer or photosensitive silicone dielectrics, such as SINR-3010 manufactured by ShinEtsu TM , or an epoxy siloxane, such as PCX30 manufactured by Polyset Co. Inc. in Mechanicsville, NY.
  • the cover layer 124 is made of a blend of organic polymers which is substantially inert to the corrosive action of ink. Polymers suitable for this purpose include products sold under the trademarks VACREL and RISTON by E. I. DuPont de Nemours and Co. of Wilmington, Del.
  • Embodiments of the present invention include having any number and type of layers formed or deposited over the substrate, depending upon the application.
  • the cover layer 124 defines a firing chamber 202 where fluid is heated by the corresponding ejection element 201 and defines the nozzle orifice 105 through which the heated fluid is ejected. Fluid flows through the slot 110 and into the firing chamber 202 via channels 203 formed with the cover layer 124. Propagation of a current or a "fire signal" through the resistor causes fluid in the corresponding firing chamber to be heated and expelled through the corresponding nozzle 105.
  • the cover layer 124 includes two layers 205, 207.
  • the first layer 205 such as a primer layer and a bottom layer, is formed over layer 129
  • the second layer 207 (such as a top coat layer, a chamber layer, and a nozzle layer) is formed over layer 205.
  • the first layer 205 at least partially defines the firing chamber 202
  • the second layer 207 defines a ceiling of the fluid channel 203, the remainder of the firing chamber and walls, as well as the nozzle 105.
  • the first layer 205 defines the firing chamber walls
  • the second layer 207 defines the nozzle.
  • layers 205 and 207 are formed of different materials. In this embodiment, layers 205 and 207 are formed of the same material. In alternative embodiments, the layers 205 and 207 are about the same thickness, or layer 207 is thicker than layer 205, or layer 205 is thicker than layer 207. In this embodiment, layer 205 is thinner than layer 207. In one embodiment, layer 205 has a thickness of about 2 to 15 microns, preferably 2 to 6 microns, preferably 2 microns. In one embodiment, layer 207 has a thickness of about 20 to 60 microns, preferably 30 microns. In one embodiment, the thickness of the primer layer is less than about 50% of the entire thickness of the layer 124.
  • the primer layer 205 is a low viscosity SU8 material that is cured at 210°C.
  • the material for the primer layer 205 is chosen for resistance to ink and for adhesion to the thin film stack 116 and the nozzle or chamber layer.
  • the primer layer 205 is more flexible than the other layers of the cover layer 124.
  • the primer layer 205 has more ink resistance than the other layers of the cover layer 124.
  • the primer layer 205 is formed of NANO TM SU8 Flex CP which is a lower modulus SU8 formation.
  • the primer layer 205 is a flexibilized epoxy.
  • the primer layer 205 is a polyimide - polyamide layer.
  • the primer layer 205 is SU8 with alternative Photo-Acid-Generator (PAG) loading that makes the material photosensitive.
  • PAG Photo-Acid-Generator
  • the primer layer 205 is cured to a higher temperature than that of other layers in the cover layer 124. With this higher temperature may come more resistance to ink, and more stress. However, the thickness of the layer 205 remains relatively thin to reduce undesirable cracking.
  • the layer 207 has high resolution photolithographic characteristics. In one embodiment, the layer 207 is cured at 170°C.
  • FIG. 4A-4D the process of forming the two layer (205, 207) barrier layer 124 is illustrated.
  • the embodiment of Fig. 5 shows the flow chart corresponding to the process illustrated in Figs. 4A to 4D.
  • the primer layer 205 is coated in step 500, and exposed in step 510.
  • a nozzle layer material 207a coats the primer layer 205 in step 520 and as shown in Fig. 4A.
  • the nozzle layer 207 is exposed in two masks as shown in Figs. 4B and 4C.
  • step 540 and as shown in Fig. 4D, the remaining unexposed nozzle layer material 207a is developed and thereby removed.
  • the nozzle layer forms the firing chamber 202 and nozzle 105.
  • an additional top coat 209 is formed over the nozzle layer 207.
  • the top coat 209 is photodefinable.
  • the top coat 209 is formed of SU8.
  • the top coat is non-wetting.
  • the top coat 209 is a planarizing layer to planarize the often rough topography of the nozzle layer.
  • the top coat 209 is a mask drawn to produce countersunk bores to reduce puddling.
  • the top coat 209 has low surface energy.
  • the top coat 209 is a siloxane based material.
  • the top coat 209 is a fluoropolymer based material.
  • the thickness of layer 209 is in the range of about 1 ⁇ 2 to 5 microns, preferably 1.1 microns.
  • FIG. 7A-7H the process of forming the three layer (205, 206, 208) barrier layer 124 is illustrated.
  • the embodiment of Fig. 8 shows the flow chart corresponding to the process illustrated in Figs. 7A to 7H.
  • step 800 the thin films 116 forming the fluid ejectors are deposited over the substrate.
  • step 810 the primer layer 205 is spun onto the thin film layers 116 and patterned.
  • step 820 and as illustrated in Fig. 7A, a material 206a that forms the chamber layer is spun on.
  • the material 206a is patterned or exposed to form the chamber layer 206.
  • Fig. 7A-7H the process of forming the three layer (205, 206, 208) barrier layer 124 is illustrated.
  • FIG. 8 shows the flow chart corresponding to the process illustrated in Figs. 7A to 7H.
  • step 800 the thin films 116 forming the fluid ejectors are deposited over the substrate.
  • step 810 the primer layer 205 is spun onto the
  • step 830 and illustrated in Fig. 7D, fill material 300, such as resist, coats the chamber layer 206.
  • the fill material 300 is planarized, by methods such as CMP, patterning and developing of material.
  • step 850 and as illustrated in Fig. 7F, the chamber layer 206 and planarized material 300 is coated with a material 208a that forms the nozzle layer. As illustrated in Fig. 7G, the nozzle layer 208 is exposed.
  • step 850 the material 208a is developed.
  • step 860 and as illustrated in Fig. 7H, the fill material (such as resist) is removed.
  • the method illustrated in Figs. 7A to 7H, and in flow chart Fig. 8 may be referred to as the lost wax method.
  • the primer layer of Fig. 7H in this embodiment, has a thickness in the range of about 2 to 15 microns, more particularly 2 to 6 microns, even more particularly 2 microns.
  • the chamber layer 206 and the nozzle layer 208 each have a thickness in the range of about 10 to 30 microns.
  • at least one of the layers 206 and 208 have a thickness in the range of about 15 to 20 microns.
  • at least one of the layers 206 and 208 have a thickness of 15 or 20 microns.
  • the nozzle layer 208 is formed of a material similar to that of layer 207 described above.
  • the chamber layer 206 is formed of a material similar to that of layer 207 described above.
  • the chamber layer 206 is formed of an SU8 with a photobleachable dye for z-contrast.
  • z-contrast refers to the direction perpendicular to the substantially planar substrate.
  • z-contrast refers to placing an absorbing material in the formulation to extinguish the light intensity from top to bottom.
  • the 'contrast' refers to the sharpness of the transition between a photo acid concentration that causes the SU8 material to resist the developer and a concentration that is dissolved by the developer. In one embodiment, the sharper this transition; the more square the feature. In this embodiment, this photobleachable dye bleaches and becomes transparent at a sufficient dosage of electromagnetic energy.
  • an additional top coat 209 is formed over the nozzle layer 208.
  • the top coat 209 is similar to the top coat 209 described with respect to Fig. 6.
  • FIG. 10A-10F the process of forming the four layer (205, 1206, 1000, 1208) barrier layer 124 is illustrated.
  • the embodiment of Fig. 11 shows the flow chart corresponding to the process illustrated in Figs. 10A to 10F.
  • step 1100 and in Fig., 10A the material 1206a for forming the chamber layer is coated over the primer layer 205.
  • step 1110 and in Fig. 10B the chamber layer 1206 is exposed thereby forming walls about a chamber, and leaving the unexposed material 1206a within the chamber area.
  • step 1120 and in Fig. 10C material 1000a for forming a photon barrier layer is coated over the chamber layer 1206 and the material 1206a.
  • step 1140 and in Fig. 10E material 1208a for the nozzle layer is coated over the photon barrier layer material 1000a.
  • step 1140 and in Fig. 10E the nozzle layer 1208 and the photon barrier layer 1000 is exposed.
  • the material 1206a remains in the chamber 202 and the materials 1000a and 1208a remain in the nozzle 105.
  • step 1150 and in Fig. 10F the materials 1206a, 1000a, and 1208a are developed and thereby removed from the chamber and nozzle.
  • the photon barrier layer 1000 is cast from a solution comprising at least one of an epoxy or acrylic resin, a binder, a solvent, a PAG (photosensitive), and an i-line dye (photon barrier).
  • the thickness of photon barrier layer 1000 is in the range of about 1/2 microns to 2 microns, preferably 1/2 micron.
  • the photon barrier layer is minimized, while being sufficiently absorbent.
  • the chamber layer 1206 and the nozzle layer 1208 are formed of a material similar to that of layer 207 described above. In one embodiment, the layer 1206 has a material similar to that of the layer 206.
  • the photon barrier layer 1000 is formed of SU8 with photobleachable dye, similar to that described with respect to an embodiment of layer 206 above. In one embodiment, the SU8 with photobleachable dye allows greater dimensional control and straighter edges. For example, as shown in Fig. 10F, the corner edges between the chamber and nozzle are substantially square edges.
  • an additional top coat 209 is formed over the nozzle layer 1208.
  • the top coat 209 is similar to the top coat 209 described with respect to Fig. 6.
  • At least one of the layers in the cover layer 124 in one of the previous embodiments is formed with the same initial basic coating material. However, that material is processed differently to give that layer different properties with respect to other layers in the cover layer 124. For example, in one embodiment, the one layer is exposed to a different dose of electromagnetic energy or cured at a different temperature than the remaining layers of the cover layer 124.
  • the materials for the layers of the cover layer 124 are chosen for, at least one of the following characteristics: CTE matching, ink resistance, stress relief, non-wetting ability, wetting ability, ability to photocure, high resolution processing capability, smooth surface, compatibility, and intermixing capability.
  • At least one of the layers in the cover layer 124 in one of the previous embodiments is formed with a material that is patterned, or etched using at least one of the following methods: abrasive sand blasting, dry etch, wet etch, UV assisted wet etch, exposure and developing, DRIE, and UV laser machining. In one embodiment, at least one of the layers in the cover layer 124 in one of the previous embodiments is formed with a dry film.
  • the materials forming the primer, chamber and/or nozzle layers are photodefined through i-line exposure.
  • the i-line exposure is a type of exposure, in particular, about 365 nm wavelength exposure.
  • this photodefined pattern is covered with a resist material.
  • the resist is a positive photoresist, in a particular embodiment it is SPR-220.
  • the resist is typically baked in a convection oven at a temperature between 110°C and 190°C to stabilize the resist for the subsequent planarization and bore or nozzle layer processing.
  • the solvent develop process that removes the unexposed chamber and nozzle layers is also used to remove the resist.
  • At least one of the above-described embodiments maximizes trajectory control by reducing orifice-chamber alignment variability.
  • ratios of SU8 ingredients, additives, and molecular weights of the SU8 oligomers are adjusted to give a range in the materials properties that are mentioned above.
  • the present invention is not limited to thermally actuated fluid ejection devices, but may also include, for example, piezoelectric activated fluid ejection devices, and other mechanically actuated printheads, as well as other fluid ejection devices.
  • the cover layer 124 of the present invention includes a plurality of layers, such as 4 layers, 5 layers, 6 layers, etc. Each of these layers may have either the same or a different material composition, depending upon the application.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)

Claims (12)

  1. Dispositif d'éjection de fluide (103) comprenant :
    ■ un substrat (15) ayant une première surface ;
    ■ un éjecteur de fluide (201) formé sur la première surface ; et
    ■ une couche de couverture (124) définissant une chambre d'amorçage (202) formée autour de l'éjecteur de fluide (201), et définissant un éjecteur (105) au-dessus de la chambre d'amorçage (202),
    dans lequel la couche de couverture (124) est formée par au moins deux couches en SU.8.
  2. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel chacune des couches en SU8 est formée à partir du même matériau.
  3. Dispositif d'éjection de fluide (103) selon la revendication 2, dans lequel chacune des couches en SU8 est traité différemment.
  4. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche de couverture (124) comporte une couche primaire (205) et une couche d'éjecteur (207), dans lequel la couche primaire (205) a une épaisseur qui est inférieure à 50% de l'épaisseur de la couche de couverture (124).
  5. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche primaire (205) est un SU8 à faible viscosité durci à 210°C.
  6. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche de couverture (124) a au moins trois couches comprenant une couche primaire (205) recouvrant de fines couches de pellicule, une couche de chambre définissant la chambre d'amorçage (202) et une couche d'éjecteur définissant l'éjecteur (105).
  7. Dispositif d'éjection de fluide (103) selon la revendication 1, comprenant en outre une couche de revêtement supérieure (207) formée par-dessus la couche de couverture.
  8. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel au moins une des couches de la couche de couverture (124) est formée par un moulage à la cire perdue.
  9. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel les matériaux pour les couches de la couche de couverture (124) sont choisis pour au moins une des caractéristiques suivantes : équivalence de coefficient de dilatation thermique, résistance à l'encre, détente, capacité de non mouillage, capacité de mouillage, capacité de photodurcissement, capacité de traitement à haute résolution, surface lisse, compatibilité et capacité de mélange.
  10. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel au moins une des couches de la couche de couverture (124) est formée par un film sec.
  11. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche de couverture (124) comporte au moins quatre couches comprenant une couche primaire recouvrant de fines couches de pellicule, une couche de chambre définissant la chambre d'amorçage, une couche barrière de photons avec une couche d'éjecteur définissant l'éjecteur.
  12. Procédé de formage d'un dispositif d'éjection de fluide (103) comprenant les étapes consistant à :
    ■ revêtir une fine pile de pellicules, comprenant un éjecteur de fluide (201) dans un premier matériau ;
    ■ exposer le premier matériau pour former une première couche de couverture en SU8 ;
    ■ revêtir le premier matériau d'un second matériau ;
    ■ exposer le second matériau pour former une seconde couche de couverture en SU8 définissant une chambre ;
    ■ développer pour enlever le second matériau non exposé de la chambre ;
    ■ remplir la chambre de matière de protection ;
    ■ aplanir la matière de protection ;
    ■ revêtir la matière de protection d'un troisième matériau ;
    ■ exposer le troisième matériau pour former une troisième couche de couverture en SU8 définissant un éjecteur ; et
    ■ développer pour retirer la matière de protection et le troisième matériau.
EP03759379A 2003-09-17 2003-09-17 Pluralite de couches limites Expired - Lifetime EP1680278B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/029809 WO2005035255A1 (fr) 2003-09-17 2003-09-17 Pluralite de couches limites

Publications (2)

Publication Number Publication Date
EP1680278A1 EP1680278A1 (fr) 2006-07-19
EP1680278B1 true EP1680278B1 (fr) 2007-10-31

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EP (1) EP1680278B1 (fr)
JP (1) JP2007528803A (fr)
KR (1) KR101012210B1 (fr)
CN (1) CN100421945C (fr)
AT (1) ATE376935T1 (fr)
AU (1) AU2003275109A1 (fr)
DE (1) DE60317247T2 (fr)
ES (1) ES2295637T3 (fr)
WO (1) WO2005035255A1 (fr)

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WO2009078879A1 (fr) * 2007-12-19 2009-06-25 Hewlett-Packard Development Company, L.P. Fusion de chambres sur un substrat

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JP4881081B2 (ja) * 2005-07-25 2012-02-22 キヤノン株式会社 液体吐出ヘッドの製造方法
CN101903180B (zh) 2007-12-20 2012-08-08 惠普开发有限公司 流体喷射器芯片和制造液滴生成器的方法
US8206998B2 (en) * 2009-06-17 2012-06-26 Canon Kabushiki Kaisha Method for manufacturing liquid discharge head
US9895885B2 (en) 2012-12-20 2018-02-20 Hewlett-Packard Development Company, L.P. Fluid ejection device with particle tolerant layer extension
CN104853923B (zh) * 2012-12-20 2016-08-24 惠普发展公司,有限责任合伙企业 具有颗粒耐受层延伸部的流体喷射装置
CN103353708A (zh) * 2013-06-14 2013-10-16 大连理工大学 一种多层负性光刻胶模具制作方法
CN104669787B (zh) * 2013-11-28 2017-11-03 珠海赛纳打印科技股份有限公司 液体喷射装置及其制造方法
JP6333992B2 (ja) 2013-12-26 2018-05-30 大連理工大学 液体ノズルと液体噴射装置の一体成形製造方法及びその装置
CN103770468B (zh) * 2013-12-26 2016-02-03 大连理工大学 液体喷射装置及其一体成型制造方法
JP6360975B2 (ja) * 2014-10-30 2018-07-18 ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. インクジェットプリントヘッド
WO2017074446A1 (fr) * 2015-10-30 2017-05-04 Hewlett-Packard Development Company, L.P. Dispositif d'éjection de fluide
JP6976081B2 (ja) * 2016-06-23 2021-12-01 キヤノン株式会社 液体吐出ヘッド用デバイス

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US4719477A (en) 1986-01-17 1988-01-12 Hewlett-Packard Company Integrated thermal ink jet printhead and method of manufacture
US5317346A (en) 1992-03-04 1994-05-31 Hewlett-Packard Company Compound ink feed slot
JP3069247B2 (ja) * 1994-07-29 2000-07-24 アルプス電気株式会社 サーマルヘッド
US6162589A (en) 1998-03-02 2000-12-19 Hewlett-Packard Company Direct imaging polymer fluid jet orifice
CN1116985C (zh) * 1998-06-30 2003-08-06 财团法人工业技术研究院 喷墨印头晶片的制造方法
TW369485B (en) * 1998-07-28 1999-09-11 Ind Tech Res Inst Monolithic producing method for chip of ink-jet printing head

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Publication number Priority date Publication date Assignee Title
WO2009078879A1 (fr) * 2007-12-19 2009-06-25 Hewlett-Packard Development Company, L.P. Fusion de chambres sur un substrat
CN101903179B (zh) * 2007-12-19 2013-09-25 惠普开发有限公司 基板上的熔丝腔
TWI500523B (zh) * 2007-12-19 2015-09-21 Hewlett Packard Development Co 印刷頭及其製造方法

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ES2295637T3 (es) 2008-04-16
ATE376935T1 (de) 2007-11-15
WO2005035255A1 (fr) 2005-04-21
DE60317247T2 (de) 2008-08-07
AU2003275109A1 (en) 2005-04-27
DE60317247D1 (de) 2007-12-13
CN1839046A (zh) 2006-09-27
KR20060081706A (ko) 2006-07-13
KR101012210B1 (ko) 2011-02-08
CN100421945C (zh) 2008-10-01
EP1680278A1 (fr) 2006-07-19
JP2007528803A (ja) 2007-10-18

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