EP1667937A1 - Procede de production d'un corps moule en sio sb 2 /sb recouvert de si sb 3 /sb n sb 4 /sb - Google Patents
Procede de production d'un corps moule en sio sb 2 /sb recouvert de si sb 3 /sb n sb 4 /sbInfo
- Publication number
- EP1667937A1 EP1667937A1 EP04764750A EP04764750A EP1667937A1 EP 1667937 A1 EP1667937 A1 EP 1667937A1 EP 04764750 A EP04764750 A EP 04764750A EP 04764750 A EP04764750 A EP 04764750A EP 1667937 A1 EP1667937 A1 EP 1667937A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- powder
- green body
- precursor
- sintered layer
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 239000011148 porous material Substances 0.000 claims abstract description 13
- 238000011065 in-situ storage Methods 0.000 claims abstract description 3
- 239000000843 powder Substances 0.000 claims description 19
- 239000006185 dispersion Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 6
- 229910005091 Si3N Inorganic materials 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 3
- NCZAACDHEJVCBX-UHFFFAOYSA-N [Si]=O.[C] Chemical compound [Si]=O.[C] NCZAACDHEJVCBX-UHFFFAOYSA-N 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920001709 polysilazane Polymers 0.000 claims description 2
- 239000011863 silicon-based powder Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005245 sintering Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229910005094 Si3M Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006063 cullet Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/225—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Definitions
- the invention relates to a method for producing an Si 3 N 4 coated Si0 2 molded body.
- Porous, open-pore, amorphous Si0 2 moldings are used in many technical fields. Filter materials, thermal insulation materials or heat shields may be mentioned as examples. Furthermore, porous, open-pore, amorphous Si0 2 shaped bodies in a rectangular shape are used for crystallizing silicon in the production of polycrystalline solar silicon blocks. These rectangular crucibles are referred to below as solar crucibles.
- the porous, open-pore, amorphous solar crucibles are generally produced using a ceramic slip casting process.
- Si0 2 particles are dispersed in water, e.g. B. shaped by means of a die casting process, then dried and solidified (sintered) by means of a heat treatment (sintering).
- Si 3 N 4 powder which is applied to the crucible surface by means of a plasma process (so-called plasma spraying) and forms the Si 3 N 4 layer there.
- the solar crucibles to be sintered are heated by the transfer of thermal energy or thermal radiation. If the solar crucibles to be produced in this way are to have an extremely high purity with regard to any kind of foreign atoms, the use of hot gases or hot contact surfaces leads to undesirable contamination with foreign atoms.
- the object of the present invention is to provide a process for the production of Si 3 N 4 -coated SiO 2 moldings in which the risk of contamination of both the Si 3 N layer and the SiO 2 -For ⁇ r ⁇ body is reduced.
- This object is achieved by a method in which a precursor which is suitable for forming an Si 3 N 4 sintered layer is applied to the surface of an amorphous open-pore SiO 2 green body and then this surface of the SiO 2 green body by a con "tactless heating is heated by means of a laser beam in such a way that the precursor is converted into an Si 3 N 4 sintered layer in situ in the laser beam.
- a laser beam can be used, but a laser with a beam with a wavelength of 10.6 ⁇ m is preferred. All commercially available CO 2 lasers are particularly suitable as lasers.
- An Si0 2 _ green body is to be understood as a porous amorphous open-pore shaped body produced from amorphous Si0 2 particles (silica glass) by shaping steps.
- the green body has preferably not yet been subjected to solidification by means of temperature treatment.
- Si0 2 green bodies are known from the prior art. Their manufacture is e.g. B. in the patents EP 705797, EP 318100, EP 653381, DE-OS 2218766, GB-B-2329893, JP 5294610, US-A-4, 929, 579. SiO 2 green bodies, the production of which is described in DE-Al-19943103, are particularly suitable.
- All materials which can form an Si 3 N 4 sintered layer after heating can be used as precursors for forming the Si 3 N 4 layer.
- Such materials are, for example, Si 3 N 4 powder, silicon powder, silicon oxide-carbon mixtures or polysilazanes. If the shaped body according to the invention is a solar crucible, preference is given to applying the precursor on one side to the inside surface of the SiO 2 green body.
- An Si 3 N 4 powder is preferred as the precursor. It is applied to the surface of the green body, dried if necessary and forms an Si 3 N sintered layer through the adsorbed energy of the laser beam.
- All commercially available powders can be used as Si 3 N 4 powder.
- the Si 3 N4-P ⁇ lver can be applied to the surface of the Si0 2 green body by all methods known to the person skilled in the art. Spraying the surface with an Si 3 N 4 powder dispersion is preferred.
- all solvents are suitable as dispersants; alcohols, acetone and water are preferred, and water is particularly preferred.
- all additives known to the person skilled in the art can also be used for better dispersion of the Si 3 N 4 powder, such as, for. B. dispersants and plasticizers.
- the layer is preferably dried after the application. Drying is carried out using methods known to those skilled in the art, such as vacuum drying, drying using hot gases such as nitrogen or air, or contact drying. A combination of the individual drying methods is also possible. Drying using hot gases is preferred.
- the Si 3 N 4 powder layer thus obtained generally has a layer thickness of 1 to 100 ⁇ m, preferably a layer thickness of 1 to 500 ⁇ m and particularly preferably of 1 to 100 ⁇ m. 1 shows a correspondingly coated surface.
- the green body is irradiated after the application of the precursor by a laser beam with a focal spot diameter of preferably at least 2 cm.
- the irradiation is preferably carried out with a radiant power density of 50W to 500W per square centimeter, particularly preferably from 100 to 200 and very particularly preferably from 130 to 180 W / cm 2 .
- the output per cm 2 must be at least so large that an Si 3 N sintered layer is formed.
- the Si 3 N 4 sintered layer formation preferably takes place at a temperature between 1000 ° C. and 1600 ° C., particularly preferably between 1000 ° C. and 1200 ° C.
- the irradiation is preferably carried out uniformly and continuously.
- the uniform, continuous irradiation of the pretreated Si0 2 green body can in principle be carried out by means of movable laser optics and / or a corresponding movement of the crucible in the laser beam.
- the movement of the laser beam can be carried out using all methods known to the person skilled in the art, eg. B. by means of a beam guidance system that enables movement of the laser focus in all directions.
- the movement of the green body in the laser beam can also be carried out using all methods known to the person skilled in the art, eg. B. using a robot. A combination of both movements is also possible.
- the formation of the Si 3 N 4 sintered layer is controlled at every location via the input of laser power.
- the formation of the Si 3 N 4 sintered layer is as uniform as possible. Due to the geometry of the Si0 2 green body, it may be that the laser beam does not always strike the green body surface at a constant angle during the irradiation of the green body. Since the absorption of the laser radiation depends on the angle, this results in an unevenly thick Si3N 4 sintered layer. A uniform Si3N 4 sintered layer is obtained in that the temperature in the focal spot of the laser can be measured at any time with a corresponding focal spot temperature measurement. Part of the reflective heat radiation is transferred via a special mirror system to a pyrometer, which is used for temperature measurement.
- one or more of the process variables laser power, travel distance, travel speed and laser focus can be adjusted during the laser irradiation of the green body so that a uniform Si 3 N 4 sintered layer can be achieved ( 2 and 3).
- the Si0 2 green bodies have a porous structure and thus precursors can easily be infiltrated into the region of the green body near the surface. This enables the formation of a silicon-oxi-nitride interface between SiO 2 shards and Si 3 N 4 sintered layer.
- the Si 3 N 4 sintered layer formation can preferably be carried out under reduced pressure or vacuum during the entire process.
- the pressure is below the normal pressure of 1013.25 mbar, particularly preferably between 0.01 and 100 mbar, very particularly preferably between 0.01 and 1 mbar.
- the solidification of the green body can be controlled right up to complete glazing.
- the sintered open-pore Si0 2 shaped body provided on the inside with an Si 3 N 4 sintered layer is preferably a crucible for the crystallization of solar silicon.
- Fig. 1 shows a SEM photograph of a Si0 2 green body coated with Si 3 N 4 powder.
- Fig. 2 shows a SEM image of a Si0 2 molded body with a Si 3 N 4 sintered layer after performing the method according to the invention. Points are marked with an arrow at which a sinter neck formation is visible.
- Fig. 3 shows the X-ray diffractometer spectrum (RDA) of a Si0 2 molded body with an Si 3 N 4 sintered layer after performing the inventive method.
- Example 1 Production of an open-pore porous amorphous Si0 2 green body in crucible shape
- the dispersion prepared in this way consisted of 8900 g of solid, which corresponds to a solids content of 70% by weight (of which in turn 92% fused silica and 8% fumed silica).
- the green body was manufactured using ceramic die-casting technology.
- the Si0 2 dispersion is pressed from a storage container with a pressure of 10 bar through a line system between two open-pore plastic membranes made of methyl methacrylate.
- the membranes have a porosity of 30% by volume and. have an average pore radius of 20 ⁇ m. The distance between the two membranes allows the formation of a 10 mm thick body.
- a closing pressure of 200 bar is applied to the two membranes.
- the pressure on the dispersion forces most of the water in the dispersion into the membrane.
- the Si0 2 shards are formed.
- the pressure in the reservoir is reduced to 0 bar overpressure.
- Special air and water lines laid in the membrane allow air or water to be applied to the formed body through the porous membrane for final shaping.
- the molded body detaches from the membrane. First the molded body is detached from the outer membrane, then from the inner one.
- the amorphous, open-pore, porous molded body produced in this way has a solids content of 89% by weight and a residual water content from 11% by weight. After drying at 90 ° C for 3 hours, the molded body is completely dry.
- Example 2 Coating on the inside with Si 3 N 4 powder
- Example 3 Formation of the Si 3 N4 sintered layer using a CO 2 laser
- the crucible was irradiated with an ABB robot (type IRB 2400) in the focus of a C0 2 laser (type TLF 3000 Turbo) with 3 kW beam power.
- the laser was equipped with a rigid beam guidance system and all degrees of freedom of movement were provided by the robot.
- the beam guide was equipped with optics for expanding the primary beam.
- the primary beam was 16 mm in diameter. After the parallel primary beam had passed through the widening optics, a divergent beam path resulted.
- the focal spot on the crucible had a diameter of 50 mm with a distance of approx. 450 mm between the optics and the crucible.
- the robot was controlled using a program adapted to the crucible geometry.
- the upper edge of the crucible was first swept by the laser in an angular range of 375 °.
- the rest of the inner surface of the crucible was then removed in the form of a screw.
- the speed of rotation and feed rate of the crucible on an axis from the edge of the crucible to the center were accelerated so that the swept ne area was constant per time.
- the irradiation was carried out at 150 TW / cm 2 .
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Silicon Compounds (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Glass Melting And Manufacturing (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
L'invention concerne un procédé de production d'un corps moulé en SiO2 recouvert de Si3N4 à partir d'un corps vert en SiO2 . L'invention est caractérisée en ce qu'un précurseur qui convient à la formation d'une couche frittée Si3N4, est appliqué sur la surface du corps vert SiO2 à pores ouverts et amorphe puis le précurseur se transforme en une couche frittée Si3N4 in suti dans le faisceau.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10342042A DE10342042A1 (de) | 2003-09-11 | 2003-09-11 | Verfahren zur Herstellung eines Si3N4 beschichteten SiO2-Formkörpers |
PCT/EP2004/009792 WO2005026067A1 (fr) | 2003-09-11 | 2004-09-02 | Procede de production d'un corps moule en sio2 recouvert de si3n4 |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1667937A1 true EP1667937A1 (fr) | 2006-06-14 |
Family
ID=34258574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04764750A Withdrawn EP1667937A1 (fr) | 2003-09-11 | 2004-09-02 | Procede de production d'un corps moule en sio sb 2 /sb recouvert de si sb 3 /sb n sb 4 /sb |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070013098A1 (fr) |
EP (1) | EP1667937A1 (fr) |
JP (1) | JP2007505026A (fr) |
KR (1) | KR100734970B1 (fr) |
CN (1) | CN1849269A (fr) |
DE (1) | DE10342042A1 (fr) |
TW (1) | TW200514760A (fr) |
WO (1) | WO2005026067A1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006005416A1 (fr) * | 2004-07-08 | 2006-01-19 | Deutsche Solar Ag | Procede pour realiser une coquille presentant un revetement anti-adhesif |
JP4863637B2 (ja) * | 2005-03-29 | 2012-01-25 | 京セラ株式会社 | シリコン鋳造装置及び多結晶シリコンインゴットの鋳造方法 |
NO327122B1 (no) * | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
DE102008031766A1 (de) | 2008-07-04 | 2009-10-15 | Schott Ag | Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels |
DE102009048741A1 (de) | 2009-03-20 | 2010-09-30 | Access E.V. | Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils |
FR2964117B1 (fr) * | 2010-08-27 | 2012-09-28 | Commissariat Energie Atomique | Creuset pour la solidification de lingot de silicium |
CN101913776B (zh) * | 2010-09-03 | 2012-07-04 | 山东理工大学 | 氮化硅涂层石英坩埚的制备方法 |
US8747538B2 (en) * | 2011-09-20 | 2014-06-10 | Chung-Hou Tony Hsiao | Photovoltaic ingot mold release |
FR2986228B1 (fr) * | 2012-01-31 | 2014-02-28 | Commissariat Energie Atomique | Creuset pour la solidification de lingot de silicium. |
KR101431457B1 (ko) * | 2012-04-09 | 2014-08-22 | 한국화학연구원 | 도가니 보호막 제조 방법 |
CN102898034B (zh) * | 2012-09-28 | 2015-02-18 | 东海晶澳太阳能科技有限公司 | 一种晶体硅铸锭用坩埚氮化硅涂层的制作方法 |
DE102012019519B4 (de) * | 2012-10-05 | 2015-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer diffusionshemmenden Beschichtung, Tiegel zum Schmelzen und/oder Kristallisieren von Nichteisenmetallen sowie Verwendungszwecke |
CN112521139B (zh) * | 2019-09-03 | 2022-09-23 | 南京优登科技有限公司 | 一种跨尺度多孔陶瓷及其制备方法 |
CN116606166B (zh) * | 2023-04-26 | 2024-05-24 | 贵州省紫安新材料科技有限公司 | 一种快速制备碳化硅非晶涂层的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4929579A (en) * | 1988-06-29 | 1990-05-29 | Premier Refractories & Chemicals Inc. | Method of manufacturing cast fused silica articles |
US6491971B2 (en) * | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
DE10128664A1 (de) * | 2001-06-15 | 2003-01-30 | Univ Clausthal Tech | Verfahren und Vorrichtung zur Herstellung von keramischen Formförpern |
DE10158521B4 (de) * | 2001-11-29 | 2005-06-02 | Wacker-Chemie Gmbh | In Teilbereichen oder vollständig verglaster SiO2-Formkörper und Verfahren zu seiner Herstellung |
-
2003
- 2003-09-11 DE DE10342042A patent/DE10342042A1/de not_active Withdrawn
-
2004
- 2004-09-02 WO PCT/EP2004/009792 patent/WO2005026067A1/fr active IP Right Grant
- 2004-09-02 EP EP04764750A patent/EP1667937A1/fr not_active Withdrawn
- 2004-09-02 KR KR1020067004989A patent/KR100734970B1/ko not_active IP Right Cessation
- 2004-09-02 JP JP2006525708A patent/JP2007505026A/ja not_active Withdrawn
- 2004-09-02 CN CNA200480026199XA patent/CN1849269A/zh active Pending
- 2004-09-02 US US10/595,156 patent/US20070013098A1/en not_active Abandoned
- 2004-09-09 TW TW093127235A patent/TW200514760A/zh unknown
Non-Patent Citations (1)
Title |
---|
See references of WO2005026067A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20070013098A1 (en) | 2007-01-18 |
WO2005026067A1 (fr) | 2005-03-24 |
DE10342042A1 (de) | 2005-04-07 |
CN1849269A (zh) | 2006-10-18 |
KR100734970B1 (ko) | 2007-07-03 |
TW200514760A (en) | 2005-05-01 |
JP2007505026A (ja) | 2007-03-08 |
KR20060087556A (ko) | 2006-08-02 |
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