EP1584115B1 - Halbleitende insel als aktive schicht in einem fet - Google Patents

Halbleitende insel als aktive schicht in einem fet Download PDF

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Publication number
EP1584115B1
EP1584115B1 EP04703203.2A EP04703203A EP1584115B1 EP 1584115 B1 EP1584115 B1 EP 1584115B1 EP 04703203 A EP04703203 A EP 04703203A EP 1584115 B1 EP1584115 B1 EP 1584115B1
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area
substrate
semiconductive material
areas
surface energy
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French (fr)
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EP1584115A2 (de
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Henning Sirringhaus
Catherine Ramsdale
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FlexEnable Ltd
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FlexEnable Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Definitions

  • This invention relates to solution processed devices and methods for forming such devices.
  • TFTs Semiconducting conjugated polymer thin-film transistors
  • C. Drury, et al., APL 73, 108 (1998 ) and optoelectronic integrated devices and pixel transistor switches in high-resolution active-matrix displays
  • H. Sirringhaus, et al., Science 280, 1741 (1998 ) A. Dodabalapur, et al. Appl. Phys. Lett. 73, 142 (1998 )
  • test device configurations with a polymer semiconductor inorganic metal electrodes and gate dielectric layers high-performance TFTs have been demonstrated.
  • Thin, device-quality films of conjugated polymer semiconductors can be formed by coating a solution of the polymer in an organic solvent onto the substrate.
  • the technology is therefore ideally suited to cheap, large-area solution processing compatible with flexible, plastic substrates.
  • it is desirable that all components of the devices including the semiconducting layers, the dielectric layers as well as the conducting electrodes and the interconnects are deposited from solution.
  • ink droplets of a conducting ink 4 such as of the conducting polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT/PSS) are deposited into the high surface energy regions, the droplets spread inside the hydrophilic region, but their spreading is confined when they hit the hydrophobic barriers ( Fig. 1B ).
  • the droplets can be deposited directly on top of the hydrophobic barrier region defining the channel length L. If the surface energy of the barrier region is sufficiently low, the ink droplets split in half, and deposit on each side of the barrier. In some situation this process is advantageous compared to the one described in Fig. 1B .
  • the minimum width of the source and drain electrodes can be lower by up to a factor of 2, because the total ink volume splits in half, and each side of the channel barrier contains only half as much ink as if source and drain areas were filled separately. This process results in the formation of source and drain electrodes 5 with very high resolution.
  • Devices are completed by deposition of a continuous or patterned semiconducting active layer 6, a gate dielectric layer 7, and finally a gate electrode 8.
  • WO02/095805 describes a technique involving defining high-resolution patterns of switching device layers by exposure to a focussed laser beam.
  • the active semiconducting layer needs to be patterned into an active layer island. This is necessary in order to reduce electrical crosstalk and eliminate parasitic leakage currents between neighbouring devices. Even if the semiconducting material is not doped, leakage currents through the semiconducting layer can be significant, in particular for circuits with a high packing density of transistors, such as high resolution active matrix displays. In an active matrix display metallic interconnects for pixel addressing are running across the display. If semiconducting material is present underneath such interconnects lines, parasitic TFT channels can form underneath these interconnect lines, giving rise to non-negligible leakage currents between pixels.
  • Patterning of a semiconductor active layer island can be achieved by inkjet printing an ink of the semiconducting material on top of the predeposited source-drain array ( Fig. 1C ).
  • the active layer island should not be much larger than the source-drain electrode pattern. For many inks this is not easy to achieve.
  • Inks for semiconducting material such as conjugated polymer semiconductors, are often formulated in highly non-polar solvents, such as xylene or mesitylene. These solvents have low surface energies, hence on wetting substrates droplets of such non-polar ink formulations spread to a large diameter, typically 50-200 ⁇ m for inkjet droplet volumes of 10 - 50 pl.
  • inks of conducting materials such as PEDOT/PSS in water tend to be formulated in more polar, high surface energy solvents, that spread significantly less.
  • the diameter of a dried non-polar semiconducting droplet is significantly larger than the combined width of the source and drain electrodes.
  • a continuous layer of gate dielectric deposited, for example, by processes such as blade, spin, spray or extrusion coating can be useful to allow crossing of interconnects at the source-drain and gate level without the need for deposition of additional insulation layers.
  • via-hole interconnections are required whenever electrodes / interconnects in a top layer need to be connected electrically to electrodes / interconnects in a bottom layer. If the dielectric layer is patterned, however, such connections can simply be established by printing over the edge of the dielectric pattern ( PCT/GB00/04942 ).
  • a method is provided by which a same surface energy pattern is used for the confinement of a solution of a first material, and subsequently the same surface energy pattern is used for the confinement of a solution of at least one additional material.
  • the invention enables fabrication of self-aligned active layer islands for solution-processed, and directly printed TFTs.
  • Fig. 2 As in PCT/GB00/04934 the process starts with the definition of a surface energy pattern that creates regions of high surface energy 10, and low surface energy 11 and 12 on the substrate 9.
  • Region 12 defines the channel length of the transistor device, region 11 confines the solution for the deposition of source and drain electrode to form source and drain electrodes 13 with a narrow linewidth.
  • the solution for the conducting source-drain electrodes can be deposited by a range of different printing techniques including, but not limited to, inkjet printing, soft lithographic printing ( J.A. Rogers et al., Appl. Phys. Lett. 75, 1010 (1999 ); S. Brittain et al., Physics World May 1998, p.
  • a solution of the active semiconducting material 14 is deposited from solution.
  • a broad range of printing techniques can also be used including, but not limited to, inkjet printing, soft lithographic printing ( J.A. Rogers et al., Appl. Phys. Lett. 75, 1010 (1999 ); S. Brittain et al., Physics World May 1998, p. 31 ), screen printing ( Z. Bao, et al., Chem. Mat. 9, 12999 (1997 )), and photolithographic patterning (see WO 99/10939 ), offset printing, spin-coating, blade coating or dip coating, curtain coating, meniscus coating, spray coating, or extrusion coating. Also here, a preferred technique is drop-on-demand inkjet printing.
  • the ink formulation and the surface wetting conditions prior to deposition of the semiconducting ink are chosen such that
  • the semiconducting ink is repelled by surface region 11, but does not dewet from surface region 12.
  • many conducting materials can be formulated in relatively polar solvents with high surface energies
  • many semiconducting inks such as many conjugated polymers, for example, polyalkylthiophene or polyfluorene based semiconducting polymers, need to be formulated in non-polar solvents such as xylene or mesitylene. These solvents have a low surface energy.
  • the surface region 11 needs to exhibit a contact angle for the semiconducting ink that is significantly higher than that on the surface of the conducting ink 13.
  • the difference in contact angle between the two regions is higher than 10°, more preferably higher than 30°.
  • the surface of the substrate is fluorinated in regions 12 and 11.
  • a fluorinated surface has a lower surface energy than most common non-polar solvent inks, and is therefore capable of confining both the polar conducting ink and the non-polar semiconducting ink.
  • Selective fluorination of the substrate surface can be achieved in a range of different ways:
  • the surface energy pattern used for the confinement of the semiconducting ink is essentially the same surface energy pattern that is responsible for the confinement of the conducting ink.
  • the substrate may be subject to a surface treatment step in order to control the wetting conditions of the semiconducting ink on the various surface regions 13, 12, 11, and possibly uncovered surface regions 10.
  • This surface treatment may selectively increase the surface energy of the conductive material.
  • This surface treatment may also involve a patterning or masking step by which some regions are protected during such a surface treatment step. However, preferrably there is no additional patterning step associated with such surface treatment.
  • An alternative technique to achieve confinement of the semiconducting ink is to make use of surface roughness effects.
  • On a microscopically rough surface the contact line of a spreading droplet is easily pinned.
  • the surface roughness effect can also be used in combination with a surface energy contrast in order to enhance the ability of region 11 to confine the incoming droplet.
  • the microscopic surface roughness can be generated by a range of techniques such as, but not limited to:
  • the semiconducting ink in spite of being repelled from surface region 11, does not dewet from surface region 12 (in contrast to the ink of the conducting material).
  • this is achieved by controlling the surface energies of regions 11 and 12 separately, i.e. by preparing surface region 12 in a state with slightly higher surface energy than region 11.
  • the surface energy of region 12 always needs to be low enough as to repel the ink of the conducting material.
  • such a process usually requires a separate patterning step in order to define the differential surface energy contrast between regions 12 and 11.
  • dewetting of the semiconducting ink from region 12 is avoided without a surface energy contrast between regions 11 and 12, i.e. , without an additional patterning step.
  • the semiconducting ink is deposited directly on top of region 12, as opposed to being deposited into region 13.
  • Dewetting of the semiconductive ink from region 12 can proceed by two different processes:
  • FIG. 6 An alternative design is shown in Figure 6 .
  • This embodiment is particularly preferred in cases where the dried conductive ink itself has a relatively low surface energy.
  • the topology of the surface energy pattern that is defined prior to the deposition of the conductive ink is more complex consisting of spatially separated high surface energy regions 10, 20, and low surface energy regions 11, 12, and 21.
  • the conductive ink 22 is deposited in such a way that it is confined to region 10 while dewetting from region 11 and 12.
  • the volume and position of deposited liquid droplets is adjusted such that the conductive ink is not brought in contact with region 20.
  • the semiconductive ink 23 is deposited, and the volume of ink is adjusted such that the ink fills region 20, but is repelled from region 21, while covering regions 10, 11, 12, and 20.
  • the contact line of the semiconductive ink droplet is located everywhere on top of a high surface energy region, minimizing the tendency of the semiconductive ink to dewet during drying from the critical, low surface energy channel region 12.
  • a further embodiment of the present invention by which dewetting of the semiconductive solution from the channel region 12 can be prevented, incorporates a highly hydrophobic surface energy barrier 11, 12, which in spite of its hydrophobic character, exhibits good wetting for the semiconducting solution ( Figure 7 ). This may be due to a favourable interfacial interaction between the semiconducting solution and the surface energy barrier, such as swelling of the surface energy barrier by the solvent of the semiconducting solution.
  • An example of such a surface energy barrier material is BCB (benzocyclobutene/mesitylene).
  • a layer of BCB polymer may be deposited from a solvent, such as xylene.
  • the thin film of BCB may be patterned to create a surface energy pattern containing regions of high surface energy 10, and 24 and low surface energy 11 and 12 on the substrate.
  • the patterning of the polymer may be achieved by processes such as, but not limited to, photolithographic patterning, thermal transfer printing or direct write exposure to a focussed light beam ( GB 0116174.4 ).
  • Figure 9 shows a mechanism for polymerisation of BCB.
  • the BCB monomer and the BCB polymer include Si-O-Si moieties.
  • the Si-O-Si moieties have CH 3 side-groups.
  • Other polymers having Si-O-Si moieties can advantageously be used.
  • Conducting source and drain electrodes 25 may be deposited on regions of high surface energy, leaving the hydrophobic BCB areas to act as barriers to the printed electrodes.
  • a semiconductor layer, preferably F8T2 poly(dioctylfluorene-co-bithiophene) 26 is deposited from a solvent and deposited over the source and drain contacts.
  • the solvent is chosen such that it is capable of swelling the BCB and is preferably a substituted benzene compound and most preferably 1,2,3,4-tetramethylbenzene.
  • the semiconductor is wetting to the low energy hydrophobic patterned BCB regions on the substrate and therefore to the channel region of the device.
  • the importance of the surface energy of the patterned BCB to the functioning of the device has been previously shown. In devices where the surface energy of the patterned material has been too low, the semiconductor dewets from the patterned material and is repelled from the channel region.
  • the semiconductor becomes pinned at the BCB / substrate interface therefore favouring the BCB regions to the exposed substrate.
  • the semiconductor solvent is capable of swelling the BCB material. The swelling effect further aids the confinement of the semiconductor to the BCB regions.
  • Figure 8 shows a photograph of an inkjet printed active semiconducting active layer island of F8T2 and PEDOT source-drain electrodes both confined by a common surface energy pattern defined by patterning a layer of BCB on a glass substrate by thermal imaging.
  • the semiconductive solution might be confined to region 12 and part of region 10. However, in many cases the semiconductive solution will spread further into region 11. Due to the favourable interaction between the semiconductive solution with the surface energy barrier the latter has little confinement effect onto the semiconductive solution in this case. However, confinement can still be achieved by surface energy pattern designs such as the one shown in Figure 6 .
  • the semiconductive ink will readily be in contact with region 11, but will then be repelled by region 20 due to the unfavourable interface interaction of the semiconductive solution with the high energy surface in region 20. In this case region 21 shown in Figure 6 can be omitted, and the high energy surface of the underlying substrate in region 20 can be used to confine the semiconducting solution.
  • the drying profile of the semiconducting ink material is desirable that the thickness of the semiconducting active layer island (typically on the order of 10-100nm) is as homogeneous as possible over the dimension of the device ( Fig. 4A ).
  • the semiconducting ink droplet after being repelled by the high surface energy region 11, the semiconducting ink droplet might further recede before drying with a contact line no longer in contact with the boundary between regions 13 and 11 ( Fig. 4B ). This is not necessarily problematic as long as the film remains sufficiently thin and continuous in the region of the active channel, and remains in contact with both the source and drain electrodes.
  • Coffee-stain drying can be prevented by increasing the viscosity of the solution, reducing the evaporation time, for example by using lower boiling point solvents, deposition at elevated temperature, exposing the substrate to electromagnetic radiation during deposition and drying, or flowing a stream of "dry" inert gas over the substrate during deposition. In this way a highly viscous solution state is reached more quickly, before all the material has flown to the edges of the droplet.
  • the devices are completed by deposition of a gate dielectric layer with a thickness of typically 50 nm to 2000 nm and a conducting gate electrode.
  • the gate dielectric may either be in the form of a continuous layer (fabricated by techniques such as spin coating, spray or blade coating), which then requires via-hole interconnections in many applications, or in the form of a patterned active layer island. In the latter case several alternatives are possible.
  • the deposition of the dielectric island extends a certain distance beyond the semiconducting active layer island, at least in regions where the gate interconnect 18 is printed over the edge of the dielectric island ( Fig. 5(A) ).
  • Formation of a continuous gate dielectric layer requires that the dielectric ink is not strongly repelled from surface region 11. This can be achieved by treating the substrate prior to deposition of the dielectric solution to increase wetting in region 11.
  • interleaved printing can be used, such that a few isolated droplets are deposited first into region 11 without coming into contact with the lower surface energy regions of the device. Once these droplets have dried they provide anchoring points which allow printing of a continuous dielectric layer covering the active device area and adjacent boundary regions in region 11.
  • printing from a high viscosity solution favours the formation of continuous films on top of low surface energy substrates.
  • the maximum solution viscosity is typically limited to 20-40 cpi, but with techniques such as screen printing even higher viscosity formulations can be deposited.
  • Fig. 5B An alternative configuration is often observed for highly fluorinated surface energy barriers and is shown in Fig. 5B .
  • the dielectric ink is strongly repelled by surface region 11, and its deposition is confined to the active layer island.
  • region 10 is not filled completely with conducting material such as for example in the device configurations shown in Fig. 3(B) and (C) .
  • a separate dielectric material 19 Fig. 5(C) ) can be deposited over the edge of the dielectric island to prevent electrical shorting and reduce leakage currents.
  • a 50 nm thick film of polyimide is deposited on top of a 1737 glass substrate.
  • the polyimide film is patterned by photolithography, followed by oxygen plasma etching to expose the bare glass substrate in surface region 10.
  • the substrate is exposed to a CF 4 plasma treatment (50-100 W for 5 min), during which the hydrophobic polyimide bank regions 11 and 12 are fluorinated.
  • source-drain electrode are formed by inkjet printing PEDOT/PSS droplets into region 10 and/or on top of region 12.
  • a solvent which is preferably xylene or mesitylene and most preferably 1, 2, 3, 4 - tetramethylbenzene
  • the processes and devices described herein are not limited to devices fabricated with solution-processed polymers.
  • Some of the conducting electrodes of the TFT and/or the interconnects in a circuit or display device may be formed from inorganic conductors that can, for example, be deposited by printing of a colloidal suspension or by electroplating onto a pre-patterned substrate.
  • inorganic conductors can, for example, be deposited by printing of a colloidal suspension or by electroplating onto a pre-patterned substrate.
  • PEDOT/PSS portions of the device may be replaced with an insoluble conductive material such as a vacuum-deposited conductor.
  • any solution processible conjugated polymeric or oligomeric material that exhibits adequate field-effect mobilities exceeding 10 -3 cm 2 /Vs, preferably exceeding 10 -2 cm 2 /Vs, may be used.
  • Suitable materials are reviewed for example in H.E. Katz, J. Mater. Chem. 7, 369 (1997 ), or Z. Bao, Advanced Materials 12, 227 (2000 ).
  • Other possibilities include small conjugated molecules with solubilising side chains ( J.G. Laquindanum, et al., J. Am. Chem. Soc. 120, 664 (1998 )), semiconducting organic-inorganic hybrid materials self-assembled from solution ( C.R.
  • the electrodes may be coarse-patterned by techniques other than inkjet printing. Suitable techniques include soft lithographic printing ( J.A. Rogers et al., Appl. Phys. Lett. 75, 1010 (1999 ); S. Brittain et al., Physics World May 1998, p. 31 ), screen printing ( Z. Bao, et al., Chem. Mat. 9, 12999 (1997 )), and photolithographic patterning (see WO 99/10939 ), offset printing, flexographic printing or other graphic arts printing techniques. Inkjet printing is considered to be particularly suitable for large area patterning with good registration, in particular for flexible plastic substrates.
  • one or more components may also be deposited by vacuum deposition techniques and/or patterned by a photolithographic process.
  • Devices such as TFTs fabricated as described above may be part of a more complex circuit or device in which one or more such devices can be integrated with each other and/or with other devices.
  • Examples of applications include logic circuits and active matrix circuitry for a display or a memory device, or a user-defined gate array circuit.
  • the patterning process may be used to pattern other components of such circuits as well, such as interconnects, resistors, capacitors etc.
  • the present invention is not limited to the foregoing examples.
  • the devices described above could be supplemented by other conductive and/or semiconductive structures on the same substrate, for example interconnects. Multiple devices as described above may be formed on the same substrate, and may be connected together by electrically conductive interconnects to form an integrated circuit.

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  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Claims (47)

  1. Verfahren zur Bildung einer Vielzahl von Transistor-Bauelementen auf einem Substrat, die zumindest ein elektrisch leitendes Material (5) und ein halb leitendes Material (6) einschließen, wobei die Materialien aus jeweiligen Flüssigkeiten auf das Substrat abgelagert werden, wobei das Verfahren für jedes Transistor-Bauelement umfasst:
    Bilden eines Oberflächen-Energiemusters auf dem Substrat, das einen ersten Bereich (10) des Substrats, einen zweiten Bereich (10) des Substrats beabstandet vom ersten Bereich des Substrats durch einen Abstandsbereich (12) und einen dritten Bereich des Substrats definiert, der zumindest teilweise den ersten Bereich, den zweiten Bereich und den Abstandsbereich überlappt; und anschließend:
    Ablagern des elektrisch leitenden Materials (5) auf dem Substrat durch Auftragen der das elektrisch leitende Material umfassenden Flüssigkeit über das Substrat; und
    Ablagern des halb leitenden Materials (6) auf das Substrat durch Auftragen der das halb leitende Material umfassenden Flüssigkeit über das Substrat; wobei
    das Oberflächen-Energiemuster derartig ist, dass das elektrisch leitende Material auf die ersten und zweiten Bereiche (10) lokalisiert wird und das halb leitende Material auf den dritten Bereich lokalisiert wird, um eine Halbleiterinsel des Transistor-Bauelements zu bilden; und
    das halb leitende Material abgelagert wird, um sich über den dritten Bereich kontinuierlich zwischen dem leitenden Material im ersten Bereich und dem leitenden Material im zweiten Bereich zu erstrecken.
  2. Verfahren wie in Anspruch 1 beansprucht, wobei das halb leitende Material abgelagert wird, um im Wesentlichen die Ganzheit des Abstandsbereichs zwischen dem ersten Bereich und dem zweiten Bereich zu bedecken.
  3. Verfahren wie in Anspruch 1 oder Anspruch 2 beansprucht, wobei das halb leitende Material mehr vom Abstandsbereich als von den ersten und zweiten Bereichen angezogen wird.
  4. Verfahren wie in Anspruch 1 oder Anspruch 2 beansprucht, wobei das halb leitende Material stärker von den ersten und zweiten Bereichen vom Abstandsbereich angezogen wird.
  5. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das Oberflächen-Energiemuster ferner einen vierten Bereich umfasst, der die Region umgibt, welche die ersten und zweiten Bereiche und den Abstandsbereich umfasst, wobei der vierte Bereich ein höheres Abstoßungsvermögen für das halb leitende Material als der dritte Bereich aufweist.
  6. Verfahren wie in Anspruch 5 beansprucht, wobei das Oberflächen-Energiemuster ferner einen fünften Bereich umfasst, der den vierten Bereich umgibt.
  7. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei der Abstandsbereich ein höheres Abstoßungsvermögen für das leitende Material als die ersten und zweiten Bereiche aufweist.
  8. Verfahren wie in Anspruch 2 beansprucht, wobei:
    Das Oberflächen-Energiemuster weitere Bereiche umfasst, wobei einer der weiteren Bereiche angrenzend an ein erstes Ende des Abstandsbereichs ist und ein anderer der weiteren Bereiche angrenzend an ein entgegengesetztes Ende des Abstandsbereichs ist; und
    das Abstoßungsvermögen der weiteren Bereiche relativ zum Abstoßungsvermögen des Abstandsbereichs zur Flüssigkeit des halb leitenden Materials derartig ist, dass bei Ablagerung des halb leitenden Materials das halb leitende Material ermutigt wird, im Wesentlichen die Ganzheit des Abstandsbereichs zu bedecken.
  9. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Breite des Abstandsbereichs zwischen den ersten und zweiten Bereichen weniger als 20µ beträgt.
  10. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Breite des Abstandsbereichs zwischen den ersten und zweiten Bereichen weniger als 1µ beträgt.
  11. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das in den ersten und zweiten Bereichen gebildete elektrisch leitende Material Source- und Drain-Elektroden eines Transistors bildet.
  12. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das Oberflächen-Energiemuster des Substrats unter Verwendung von fluorierten Spezies gebildet wird.
  13. Verfahren wie in Anspruch 12 beansprucht, wobei das Oberflächen-Energiemuster des Substrats dadurch gebildet wird, dass das Substrat einer Plasma-Behandlung ausgesetzt wird.
  14. Verfahren wie in Anspruch 13 beansprucht, wobei das Oberflächen-Energiemuster des Substrats dadurch gebildet wird, dass das Substrat einer CF4-Plasma-Behandlung ausgesetzt wird.
  15. Verfahren wie in Anspruch 12 beansprucht, wobei das Oberflächen-Energiemuster des Substrats dadurch gebildet wird, dass das Substrat einem fluorierten selbstorganisierenden Monoschicht-Molekül ausgesetzt wird.
  16. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Oberflächen der ersten und zweiten Bereiche im Wesentlichen identischer Zusammensetzung sind.
  17. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die ersten und zweiten Bereiche auf einer freigelegten Oberfläche einer Schicht gebildet sind, die auf einem ebenflächigen Strukturelement abgelagert wurde.
  18. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Oberfläche des Substrats eine geringere Oberflächenrauigkeit in den ersten und zweiten Bereichen als in den Regionen aufweist, welche die ersten und zweiten Bereiche umgeben.
  19. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Viskosität der Flüssigkeit, die das halb leitende Material umfasst, höher als 5 cpi ist.
  20. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei der Siedepunkt der Flüssigkeit, die das halb leitende Material umfasst, geringer als 180 °C ist.
  21. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das Substrat auf einer Temperatur über 40°C gehalten wird, während die, das halb leitende Material umfassende, Flüssigkeit abgelagert wird.
  22. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Temperatur der Flüssigkeit, die das halb leitende Material umfasst, geringer als 20°C ist.
  23. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei eine Gasströmung, während der Ablagerung des halbleitenden Materials, auf die Oberfläche des Substrats gerichtet wird.
  24. Verfahren wie in Anspruch 4 beansprucht, wobei die Kontaktwinkeldifferenz der Flüssigkeit, die das halb leitende Material umfasst, auf der Oberfläche des Abstandsbereichs, um mehr als 10° größer als ihr Kontaktwinkel auf der Oberfläche der ersten und zweiten Bereiche ist.
  25. Verfahren wie in Anspruch 24 beansprucht, wobei der Kontaktwinkel der Flüssigkeit, die das halb leitende Material umfasst, auf der Oberfläche des Abstandsbereichs, um mehr als 30° größer als ihr Kontaktwinkel auf der Oberfläche des leitenden Materials in den ersten und zweiten Bereichen ist.
  26. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei der Kontaktwinkel der Flüssigkeit, die das halb leitende Material umfasst, auf der Oberfläche des Abstandsbereichs kleiner als 100° ist.
  27. Verfahren wie in Anspruch 26 beansprucht, wobei der Kontaktwinkel der Flüssigkeit, die das halb leitende Material umfasst, auf der Oberfläche des Abstandsbereichs, kleiner als 60° ist.
  28. Verfahren wie in Anspruch 17 beansprucht, wobei die Dicke der Schicht geringer als 500 Å ist.
  29. Verfahren wie in Anspruch 28 beansprucht, wobei die Dicke der Schicht geringer als 200 Å ist.
  30. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei die Flüssigkeit, die das halb leitende Material umfasst, eine Oberflächenspannung aufweist, die höher als 25 mJ/m2 ist.
  31. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das elektrisch leitende oder halb leitende Material durch Tröpfchenablagerung abgelagert wird.
  32. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das elektrisch leitende oder halb leitende Material durch Ink-Jet-Druck (Tintenstrahldruck) abgelagert wird.
  33. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das elektrisch leitende Material ein Polymer ist.
  34. Verfahren wie in einem der Ansprüche 1 bis 33 beansprucht, wobei das elektrisch leitende Material ein anorganisches partikelförmiges Material ist, das sich in der Flüssigkeit suspendieren lässt.
  35. Verfahren wie in einem vorhergehenden Anspruch beansprucht, wobei das halb leitende Material ein konjugiertes organisches Molekül ist.
  36. Verfahren wie in Anspruch 35 beansprucht, wobei das halb leitende Material ein konjugiertes Polymer ist.
  37. Verfahren wie in einem vorhergehenden Anspruch beansprucht wie von Anspruch 6 abhängig, wobei der Abstandsbereich und der vierte Bereich weniger abstoßend gegenüber der Flüssigkeit, die das halb leitende Material umfasst, als die ersten, zweiten und fünften Bereiche sind.
  38. Verfahren wie in Anspruch 37 beansprucht, wobei die Flüssigkeit, die das leitende Material umfasst, durch das Abstoßungsvermögen des vierten Bereichs und des Abstandsbereichs auf die ersten und zweiten Bereiche beschränkt ist, und das halb leitende Material, durch das Abstoßungsvermögen des fünften Bereichs, auf den dritten Bereich beschränkt ist.
  39. Verfahren wie in Anspruch 37 oder 38 beansprucht, wobei der Abstandsbereich und der vierte Bereich im Wesentlichen identischer Oberflächenenergie sind.
  40. Verfahren wie in einem der Ansprüche 37 bis 39 beansprucht, wobei der erste Bereich, zweite Bereich und fünfte Bereich im Wesentlichen identischer Oberflächenenergie sind.
  41. Verfahren wie in einem der Ansprüche 37 bis 40 beansprucht, wobei leitendes Material vom fünften Bereich abwesend ist.
  42. Verfahren wie in einem vorhergehenden Anspruch beansprucht, welches Schwellung des Abstandsbereichs durch die Flüssigkeit umfasst, die das halb leitende Material umfasst.
  43. Verfahren wie in Anspruch 42 beansprucht, wobei die Oberfläche des Abstandsbereichs ein Polymer umfasst.
  44. Verfahren wie in Anspruch 43 beansprucht, wobei das Polymer ein Polymer ist, das eine Si-O-Si-Komponente enthält.
  45. Verfahren wie in Anspruch 44 beansprucht, wobei das Polymer ein Polymer ist, das von einem substituierten Benzocyclobuten abgeleitet wurde.
  46. Verfahren wie in einem vorhergehenden Anspruch beansprucht, das ferner den Schritt der Ablagerung eines weiteren Materials auf die Oberseite des leitenden oder halb leitenden Materials umfasst.
  47. Verfahren wie in Anspruch 46 beansprucht, wobei das weitere Material ein dielektrisches Material ist, das, bei Ablagerung, durch das Oberflächenenergiemuster beschränkt wird.
EP04703203.2A 2003-01-17 2004-01-19 Halbleitende insel als aktive schicht in einem fet Expired - Lifetime EP1584115B1 (de)

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GBGB0301089.9A GB0301089D0 (en) 2003-01-17 2003-01-17 Active layer islands
GB0301089 2003-01-17
PCT/GB2004/000161 WO2004066477A2 (en) 2003-01-17 2004-01-19 Semiconducting island as active layer in fet

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US7709306B2 (en) 2010-05-04
US20060160277A1 (en) 2006-07-20
WO2004066477A2 (en) 2004-08-05
WO2004066477A3 (en) 2005-01-27
EP1584115A2 (de) 2005-10-12
GB0301089D0 (en) 2003-02-19

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