EP1571234A2 - Verfahren für den Betrieb einer Inline-Beschichtungsanlage - Google Patents
Verfahren für den Betrieb einer Inline-Beschichtungsanlage Download PDFInfo
- Publication number
- EP1571234A2 EP1571234A2 EP04024454A EP04024454A EP1571234A2 EP 1571234 A2 EP1571234 A2 EP 1571234A2 EP 04024454 A EP04024454 A EP 04024454A EP 04024454 A EP04024454 A EP 04024454A EP 1571234 A2 EP1571234 A2 EP 1571234A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- chamber
- gate
- pressure
- buffer
- chambers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 37
- 238000000576 coating method Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims description 59
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 230000008569 process Effects 0.000 claims description 46
- 238000009434 installation Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 13
- 238000005086 pumping Methods 0.000 description 24
- 238000013459 approach Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000005328 architectural glass Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C15/00—Enclosures for apparatus; Booths
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
Definitions
- the invention relates to methods according to the preamble of patent claim 1.
- sputtering systems In order to coat substrates, sputtering systems are used, in which under vacuum conditions From so-called targets particles are atomized, which then on the Precipitate substrate.
- Such a system consists of either a linear array of relatively small, but interconnected single chambers or one or two large chambers with vacuum-transition latches on each end of the line.
- the process chambers are provided either along a large chamber or in each individual chamber.
- a device for defect-free coating of substrates with a Coating line comprising a vacuum coating section and an input and exit lock has (DE 200 22 564 U1).
- a carrier provided, which contains a carrier insert for receiving the substrates.
- the carrier train is designed as a closed track.
- JP 2002309372 A In order to save space in an inline coating system, it is known the number of required To reduce carrier by a rear chamber is provided (JP 2002309372 A).
- the carriers drive with the substrates in a first direction, turn then turn 180 degrees and then drive in a second direction.
- the chambers of the known devices are tailored to specific sizes of the substrates. If substrates with oversizes are to be processed, other devices must be used to be used with larger chambers.
- the invention is therefore based on the object, with only one coating system Both normal substrates and oversized substrates can be coated.
- the invention thus relates to a method for operating an in-line coating arrangement, which consists of 2 n + 1 chambers, where n is an integer, preferably 2 is.
- an in-line coating arrangement which consists of 2 n + 1 chambers, where n is an integer, preferably 2 is.
- the advantage achieved by the invention is in particular that existing facilities can be better exploited.
- a coating system 1 is shown in a side view.
- This coating system 1 has three chambers: a Einschleushunt 2, a process chamber 3 and a discharge chamber 4. Between the various chambers 2, 3, 4 and at the entrance of the chambers 2, 4 there are a total of four gates that are open and can be closed vacuum-tight. In FIG. 1, the gates themselves are not visible, but approaches 5 to 8, which indicate the positions of the gates.
- the to be coated Substrates for example, flat architectural glass, metal plates, Si wafers, plastic plates and the like are introduced at the in-feed chamber 2, then in the Process chamber 3 coated to then led out via the discharge chamber 4 to become.
- the substrates can with or without carriers through the chambers 2, 3, 4 are moved.
- a transport system for transporting the substrates is located but in any case in the chambers 2, 3, 4.
- pumps are referred to which the chambers 2, 3, 4 up to a predetermined Evacuate pressure.
- the pumps are here on the side walls of the chambers arranged. However, they can also be arranged on the ceilings of the chambers.
- the size of the chambers 2 to 4 is determined by the maximum substrate size, for example for architectural glass is 2.54 mx 3.66 m or 3.21 mx 6.00 m.
- the number of the chambers is determined by the minimum desired cycle time. Under cycle time In this case, the time is understood that from the input of a first substrate in the Chamber 2 passes until the input of a second substrate in the same chamber 2. For one Cycle time up to approx. 90 seconds usually becomes a so-called three-chamber principle used, as shown in FIG. 1.
- a substrate is introduced at the gate open at the neck 5 in the chamber 2, the internal pressure at then closed gate on approach 5 and closed gate is reduced at the base 6 by the pumps 9 to 11, for example, to 0.05 mbar.
- the Movement of the substrate, which is usually on a carrier or carrier can, in this case is discontinuous, because the gate at the neck 6 is initially closed and the substrate must be brought to a halt by this gate.
- the gate is opened at the neck 6 and the substrate continuously through the Chamber 3 moves in which vacuum prevails. In this chamber 3 then the coating carried out. After coating, the substrate via the discharge chamber. 4 moved outside.
- the cycle times are relatively large, because the Substrate must remain relatively long in the Einschleushunt 2, so that in the chamber of the predetermined low pressure is reached.
- the substrates are in the 5-chamber coating system 20 in the plant cycle in the Einschleushunt 2 intermittently introduced, the pressure in the Einschleushunt 2 is reduced to about 15 mbar, so not to 0.05 mbar as in the 3-chamber system.
- the substrates are transferred to the buffer chamber 21, the pressure in the buffer chamber 21 being close to the pressure in the process chamber 3 is brought. After the substrates moved continuously through the process chamber 3 were, they are on the buffer chamber 22 and the discharge chamber 4 outside brought where atmospheric pressure prevails.
- the cycle time is reduced to less than 5 in the case of the 5-chamber coating system 20 90 seconds essentially in that the Einschleusvorgang a substrate in the Vacuum system is divided on the Einschleushunt 2 and the buffer chamber 21 and thus can take place in parallel in both chambers, d. H. after a substrate from the Einschleushunt 2 was conveyed into the buffer chamber 21, again a substrate be placed in the Einschleushunt 2.
- a substrate in the process chamber. 3 To introduce, the pressure in the chamber, which is located in front of the process chamber 3 is reduced to about 0.05 mbar. In the 3-chamber coating system 1 finds this pumping down to 0.05 mbar exclusively in the Einschleushunt 2 instead.
- the 5-chamber coating system 20 in the infeed chamber 2 is pumped from atmospheric pressure to only about 15 mbar and then transferred to the substrate to be processed in the buffer chamber 21.
- a pressure equalization takes place.
- the pressure in the buffer chamber 21, which was previously open to the process chamber 3, in which, for example, a pressure of 3 x 10 -3 mbar prevails, is significantly smaller than 0.05 mbar.
- the buffer chamber 21 itself does not have to be pumped to a lower pressure value.
- the Einschleushunt 2 in which a pressure of 15 mbar, with the buffer chamber 21, in which a pressure of only 3 x 10 -3 mbar prevails, is connected after opening the gate at the neck 6, the total pressure drops in the two chambers 2 and 21 of equal size to a mean pressure of about 7 mbar.
- the pressure of about 7 mbar reduced by pumping to about 0.05 mbar.
- the Einschleusvorgang for the next substrate can be started in the Einschleushunt 2 again after the Einschleushunt 2 flooded and then the gate was opened at the neck 5.
- Rotary vane pumps such as. Rotary vane pumps, Roots pumps or turbomolecular pumps have their optimum pumping speed in various pressure ranges.
- Rotary vane pumps evacuate from atmospheric pressure to approx. 0.005 mbar. To achieve this final pressure, but a very long pumping time is needed.
- Roots pumps can be used very variably and have their optimum pumping speed in the range of 1 - 0.1 mbar.
- Turbomolecular pumps are switched on below 0.1 mbar, but have a usable pumping speed below 10 -2 mbar.
- the pumps 9 to 17 or 9 to 17 and 23, 24 are according to the task they have to meet. It can be the pumps for the Einschleushunt 2 and the Buffer chamber 21 are designed so that the pumping times for both chambers 2, 21 approximately are the same.
- the Einschleushunt 2 of the 3-chamber system 1 is evacuated by means of pumps 9 to 11, the rotary vane and Roots pumps are.
- the Roots pumps increase the pumping speed in the lower pressure range to the switching point of 0.05 mbar, from the gate on the approach to 6 Process chamber 3 is opened.
- Typical cycle times here are 60 - 90 sec at approx. 30 - 60 sec pumping time.
- the Einschleushunt 2 of the 5-chamber system 20 is evacuated with pumps 9 to 11, which consist exclusively of rotary vane pumps.
- the pumping station 23 for the Buffer chamber 21 may include rotary vane and Roots pumps.
- the cycle time is approx. 45 sec with a pumping time of 15 - 20 sec. The difference between cycle time and pumping time is among other things to move the glass panes and opening and closing the gates needed.
- FIG. 3 the 3-chamber coating system 1 is again in a plan view while FIG. 4 shows the 5-chamber coating system 20 in a plan view shows.
- This 5-chamber system has two additional gates 64, 65 which are located between the chambers 21, 31 and 33, 22.
- the chamber 2 is thus pumped from atmospheric pressure to about 15 mbar, and when opening port 61, a pressure equalization takes place, since the pressure in chamber 21, previously to chamber 3 (about 3 x 10 -3 mbar), was significantly smaller than 0.05 mbar. As a result, the total pressure in both chambers 2, 21 of equal size drops to about 7 mbar. Chamber 21 is then pumped from the approx. 7 mbar to approx. 0.05 mbar. The Roots pumps in chamber 21 can operate without interruption, since the pressure in this chamber only varies between about 7 mbar and less than 0.05 mbar.
- the transport systems run only in the Transfer of the substrate from the Einschleushunt 2 in the buffer chamber 21 synchronously. During the remaining phases of movement, both transport systems can be independent of each other transport the respective substrates.
- FIG. 5 the left half of a plant 20 of FIG. 4 similar plant is still once shown in section. From the system of FIG. 4, the system differs in that, in addition to the slit diaphragm 30, it has another slit diaphragm 28. It can be seen here rollers or rollers 34 to 37 in the Einschleushunt 2, rollers or rollers 38 to 41 in the buffer chamber 21 and rollers or rollers 42 to 53 in the Process chamber 3. On these rollers or rollers, there is a substrate 55, which is moved left to right.
- the slit apertures 30, 28 are hung on sheets 18, 27 and leave on their underside a gap which is so large that the substrate 55 passes under the slit diaphragm can be.
- a sputtering cathode 56 In the actual process chamber 32 is a sputtering cathode 56. With particles sputtered from the cathode, the substrate 55 is coated.
- the slit apertures 30, 28 extend over the entire depth of the process chamber 3. This also applies for the suspensions 18, 19 of these slit diaphragms.
- the transport system can are additionally covered with a sheet metal, not shown in FIG. 5, from which only the upper area of the transport rollers looks out.
- the substrate transport device thus has many rollers or rollers 34 to 53, the rotating the substrates at the same speed.
- the transport device instructs the places where the gates 61, 64, 65, 62 are provided, interruptions or larger Distances between the rollers or rollers.
- the sections of the transport device in the chambers 2, 21, 22 and 4 are working intermittently, the section in chamber 3 works continuously.
- the substrate transport in the 5-chamber system takes place with reference 4 and 5 as follows:
- the transport device in chamber 2 is turned on, to introduce the substrate 55.
- the substrate 55 has its intended position reached in the chamber 2, the transport is switched off.
- To transfer the substrate 55 from chamber 2 in chamber 21 are both transport devices with the rollers 34 to 37 or 38 to 41 at the same time in operation and are only then turned off when the Substrate 55 has reached its end position in chamber 21.
- the transport device 38 to 41 is turned on in chamber 21, the Transport device 42 to 53 in chamber 3 is running anyway without interruption.
- To the transfer from the chamber 3 into the chamber 22 (Fig. 2) is the transport device located there switched on simultaneously with the opening of the door 65.
- the further discharge process takes place analogously to the insertion process in the reverse order.
- the Einschleushunt 2 is evacuated with a pumping station, which only from rotary vane pumps exists, the pumping station for chamber 21, however, includes rotary valve and Roots pumps. When a chamber is flooded, the pump is not switched off, but instead Valve between the chamber and the pump closed.
- the maximum permissible substrate dimension depends on the dimensions of the respective chambers. Substrates larger than the chambers 2 or 21 or 22 or 4, respectively, can not be coated. Furthermore, that applies Chambers are designed as modules with the same dimensions.
- larger substrates could be treated if the Gates 61, 63 would be open.
- the chambers would be 2 and 21 as well as 4 and 22 together form a larger space in which then a larger substrate could be accommodated.
- the process chamber 3 thus consists of a transfer region 31, a process region 32 and a further transfer region 33 in front of the discharge chamber 4, wherein a further slit diaphragm 19, 29 is provided between the transfer region 33 and the process region.
- the section 31 of the process chamber, which is evacuated via a plurality of turbo pumps 12, is referred to as a "transfer section".
- the actual process chamber 32 is composed of many individual segments of equal size, wherein as many segments are hung together as required, that the respective tasks can be performed in it.
- a pressure of 0.05 mbar prevails in a 3-chamber system 1, so that when the gate 61 is opened, gas flows into the process chamber 32, since the pressure is approximately 3.times.10.sup.-3 mbar. This pressure surge is intercepted in the "transfer section" of the process chamber 3 by the high pumping speed of several turbo pumps.
- the respective Ausschleusvorgang takes place analogously, but in reverse order d. H. is first the substrate in the discharge chamber 22, then floods, then the opening of the gate 63 to the atmosphere.
- the gates 61, 62 between the two Chambers 2, 21 and 4, 22 open to substrates - preferably glass - with To be able to process excess length; Beyond that also the pumping programs for the two chambers 2, 21 and 22, 4 are adjusted so that only both chambers 2, 21 or 22, 4 are pumped from atmospheric pressure to about 0.05 mbar. That extends Although the Einschleuszeit and thus the entire cycle time of the plant, but so can At least substrates with excess length can be machined without having to build a larger facility must become.
- the transport systems must be synchronized like a single one during the insertion process System work, otherwise scratches on the substrates would be generated. If the substrate is pushed from one section of the transport system to another section, which is not turned on, either grind the rotating rollers on the underside of the substrate or the disc is pushed over the non-rotating rollers, in both cases grinding marks are generated.
- the transport takes place in the 5-chamber system According to Fig. 4, 5 as follows: While in standard operation, the transport devices 34 to 37 and 38 to 41 in the chambers 2 and 21 as needed synchronously or independently Working together, both devices are now treated as if they were one only coherent transport device would be. The achievement of the End position of the substrate 55 in chamber 2 are ignored, d. H. it has to be to the final position pass through chamber 21. There is no operating condition here in which the individual Portions of the transport device in the chambers 2 and 21 independently work. The further substrate transport takes place analogously.
- PLC programmable logic controller
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Surface Treatment Of Glass Fibres Or Filaments (AREA)
Abstract
Description
Claims (10)
- Verfahren für den Betrieb einer Inline-Beschichtungsanlage, mit einer Einschleuskammer (2), einer daran anschließenden Pufferkammer (21), einer hieran anschließenden Prozesskammer (3), einer hieran anschließenden weiteren Pufferkammer (22) und einer hieran anschließenden Ausschleuskammer (4), wobei zwischen den Kammern Tore (61, 64, 65, 62) vorgesehen sind, die geöffnet und geschlossen werden können, und wobei die Einschleuskammer (2), die Pufferkammer (21, 22) und die Ausschleuskammer (4) als gleichartige Module und für die Aufnahme von Substraten bis zu einer vorgegebenen Maximalgröße ausgebildet sind, dadurch gekennzeichnet, dass für die Beschichtung von Substraten (55), die größer als die Module sind, das Tor (61) zwischen der Einschleuskammer (2) und der Pufferkammer (21) sowie das Tor (62) zwischen der Pufferkammer (22) und der Ausschleuskammer (4) geöffnet werden und die Druckverhältnisse der Pufferkammern (21, 22) und der Einschleus- (2) bzw. Ausschleuskammer (4) aneinander angepasst werden.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Kammern (2, 21, 3, 22, 4) mit jeweils eigenen Transportvorrichtungen (34 bis 37; 38 bis 41; 42 bis 53) für Substrate (55) ausgestattet sind und die Transportgeschwindigkeiten dieser Transportvorrichtungen (34 bis 37; 38 bis 41; 42 bis 53) aufeinander abgestimmt werden.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Prozesskammer (3) wenigstens zwei Spaltblenden (30, 29) aufweist, von denen die eine Spaltblende (30) eine linke Begrenzung der eigentlichen Prozesskammer (33) und die andere Spaltblende (29) eine rechte Begrenzung der eigentlichen Prozesskammer (33) bildet.
- Verfahren nach Anspruch 1, gekennzeichnet durch folgende Schritte:das Tor (61) am Eingang zur ersten Pufferkammer (21) und das Tor (62) zwischen der zweiten Pufferkammer (22) und der Ausschleuskammer (4) sind geöffnetdas Tor (60) am Eingang der Einschleuskammer (2) wird geöffnetein Substrat von einer die Länge der Einschleuskammer (2) oder der Pufferkammer (21) übersteigenden Länge wird in die Einschleuskammer (2) und die Pufferkammer (21) befördertdas Tor (60) am Eingang der Einschleuskammer (2) wird geschlossender durch die Einschleuskammer (2) und die Pufferkammer (21) gebildete Raum wird bei geschlossenem Tor (64) am Eingang der Prozesskammer (3) bis zu einem vorgegebenen Druck evakuiertbei Erreichen des vorgegebenen Drucks wird das Tor (64) am Eingang der Prozesskammer (3) geöffnetdas Substrat (55) wird in die Prozesskammer (3) befördert und das Tor (64) am Eingang der Prozesskammer (3) wird wieder geschlossendas Substrat (55) wird in der Prozesskammer (3) bearbeitetdas Tor (65) am Ausgang der Prozesskammer (3) wird geöffnetdas bearbeitete Substrat (55) wird in den aus der Pufferkammer (22) und der Ausschleuskammer (4) gebildeten Raum gebrachtdas Tor (65) am Ausgang der Prozesskammer (3) wird geschlossendas Tor (63) am Ausgang der Ausschleuskammer (4) wird geöffnetdas bearbeitete Substrat (55) wird nach draußen verbrachtdas Tor (63) am Ausgang der Ausschleuskammer wird geschlossen.
- Verfahren nach Anspruch 4, dadurch gekennzeichnet, dass nach dem Einschleusen des Substrats in den aus der Einschleuskammer (2) und Pufferkammer (21) gebildeten Raum und nach Schließen des Tors (60) zunächst die der Einschleuskammer (2) zugeordneten Pumpen (9 bis 11) von Atmosphärendruck auf einen ersten vorgegebenen Druck evakuieren und dass im Anschluss hieran die der Pufferkammer (21) zugeordneten Pumpen (23) auf einen Druck evakuieren, der etwa dem Druck der Prozesskammer (3) entspricht.
- Verfahren nach Anspruch 5, dadurch gekennzeichnet, dass der Druck in dem aus Einschleuskammer (2) und Pufferkammer (21) gebildeten Raum von Atmosphärendruck zunächst auf etwa 7 mbar und anschließend der Druck in dem gleichen Raum auf etwa 0,05 mbar gesenkt wird.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Transportvorrichtung (34 bis 37) der Einschleuskammer (2) und die Transportvorrichtung (38 bis 41) der anschließenden Pufferkammer (21) synchron betrieben werden.
- Verfahren nach Anspruch 7, dadurch gekennzeichnet, dass die Transportvorrichtung (42 bis 53) der Prozesskammer (3) mit der gleichen Geschwindigkeit betrieben wird wie die Transportvorrichtungen (34 bis 37; 38 bis 41) der Einschleuskammer (2) und der Pufferkammer (21).
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass in allen Kammern (2, 21, 3, 22, 4) Druckmessgeräte vorgesehen sind, deren Druck von einer Steuerung abgefragt wird, und dass diese Steuerung bei Erreichen vorgegebener Drücke eine Schalthandlung ausführt.
- Verfahren nach Anspruch 9, dadurch gekennzeichnet, dass die Schalthandlung das Öffnen oder Schließen von Toren oder das Öffnen oder Schließen von Ventilen ist, die zwischen Kammer und Pumpe angeordnet sind.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004008598A DE102004008598B4 (de) | 2004-02-21 | 2004-02-21 | Verfahren für den Betrieb einer Inline-Beschichtungsanlage |
DE102004008598 | 2004-02-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1571234A2 true EP1571234A2 (de) | 2005-09-07 |
EP1571234A3 EP1571234A3 (de) | 2006-06-21 |
EP1571234B1 EP1571234B1 (de) | 2008-06-18 |
Family
ID=34745252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04024454A Active EP1571234B1 (de) | 2004-02-21 | 2004-10-14 | Verfahren für den Betrieb einer Inline-Beschichtungsanlage |
Country Status (10)
Country | Link |
---|---|
US (1) | US7638173B2 (de) |
EP (1) | EP1571234B1 (de) |
JP (1) | JP4054003B2 (de) |
KR (1) | KR100615549B1 (de) |
CN (1) | CN100396815C (de) |
AT (1) | ATE398687T1 (de) |
DE (2) | DE102004008598B4 (de) |
ES (1) | ES2308085T3 (de) |
PT (1) | PT1571234E (de) |
TW (1) | TWI248982B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010128129A1 (de) * | 2009-05-08 | 2010-11-11 | Von Ardenne Anlagentechnik Gmbh | Durchlauf-vakuumbeschichtungsanlage |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005016405A1 (de) * | 2005-04-08 | 2006-10-12 | Von Ardenne Anlagentechnik Gmbh | Vorrichtung zur Vakuumbeschichtung von Substraten unterschiedlicher Größe |
CN1970828B (zh) * | 2005-11-26 | 2010-05-26 | 鸿富锦精密工业(深圳)有限公司 | 在模具上形成多层镀膜的方法 |
EP1840936A1 (de) * | 2006-03-29 | 2007-10-03 | Applied Materials GmbH & Co. KG | Sputterkammer zum Beschichten eines Substrats |
KR100806840B1 (ko) * | 2006-06-30 | 2008-02-22 | 세메스 주식회사 | 유기발광소자 증착장치 및 장치의 구동모듈 제어방법 |
DE102007013637B4 (de) | 2007-03-19 | 2018-12-20 | Ewald Dörken Ag | Verfahren zum Beschichten von metallischen Werkstücken |
DE112008000006A5 (de) * | 2007-06-22 | 2009-05-14 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zum Schleusen eines Substrats in eine und aus einer Vakuumbeschichtungsanlage |
DE112008001620B4 (de) | 2007-07-03 | 2021-08-26 | VON ARDENNE Asset GmbH & Co. KG | Verfahren und Vorrichtung zum Schleusen überlanger Substrate in einer Vakuumbeschichtungsanlage, Vakuumbeschichtungsanlage und Verfahren zu deren Betrieb |
CN102104088B (zh) * | 2009-12-17 | 2014-03-12 | 吉林庆达新能源电力股份有限公司 | 一种太阳能电池生产中非晶硅薄膜的沉积方法 |
KR101932578B1 (ko) * | 2010-04-30 | 2018-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 수직 인라인 화학기상증착 시스템 |
DE102010031245B4 (de) | 2010-07-12 | 2013-04-11 | Von Ardenne Anlagentechnik Gmbh | Substratbehandlungsanlage |
DE102011011279A1 (de) | 2011-02-15 | 2012-08-16 | Von Ardenne Anlagentechnik Gmbh | Apparatur zur Leitung des Gasstromes beim Belüften innerhalb eines Vakuumgehäuses |
ES2699888T3 (es) * | 2014-01-14 | 2019-02-13 | The Batteries Spolka Z Ograniczona Odpowiedzialnoscia | Procedimiento para la aplicación de capas delgadas sobre sustratos y dispositivo de producción para ello |
KR102062441B1 (ko) * | 2015-02-13 | 2020-01-03 | 뷔흘러 알제나우 게엠베하 | 인라인 코팅 시스템을 작동하는 방법 및 인라인 코팅 시스템 |
DE102015013799A1 (de) * | 2015-10-26 | 2017-04-27 | Grenzebach Maschinenbau Gmbh | Vorrichtung und Verfahren zum Beschichten überlanger flächenhafter Substrate, insbesondere Glasscheiben, in einer Vakuum-Beschichtungsanlage |
DE202015007404U1 (de) | 2015-10-26 | 2015-11-11 | Grenzebach Maschinenbau Gmbh | Vorrichtung zum Beschichten überlanger flächenhafter Substrate, insbesondere Glasscheiben, in einer Vakuum-Beschichtungsanlage |
DE102016109510B4 (de) | 2016-05-24 | 2018-07-19 | VON ARDENNE Asset GmbH & Co. KG | Vakuumprozessieranlage und Verfahren zum schubweisen Einschleusen und Ausschleusen von Substraten |
CN108396294B (zh) * | 2018-01-26 | 2021-12-10 | 中国科学院物理研究所 | 一种薄膜沉积系统及控制方法 |
JP7290509B2 (ja) * | 2019-08-15 | 2023-06-13 | 株式会社アルバック | 真空処理装置 |
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- 2004-02-21 DE DE102004008598A patent/DE102004008598B4/de not_active Expired - Lifetime
- 2004-03-22 US US10/806,060 patent/US7638173B2/en active Active
- 2004-04-21 CN CNB2004100369370A patent/CN100396815C/zh not_active Expired - Lifetime
- 2004-04-26 JP JP2004129265A patent/JP4054003B2/ja not_active Expired - Lifetime
- 2004-05-21 TW TW093114431A patent/TWI248982B/zh active
- 2004-10-14 ES ES04024454T patent/ES2308085T3/es active Active
- 2004-10-14 AT AT04024454T patent/ATE398687T1/de active
- 2004-10-14 EP EP04024454A patent/EP1571234B1/de active Active
- 2004-10-14 PT PT04024454T patent/PT1571234E/pt unknown
- 2004-10-14 DE DE502004007384T patent/DE502004007384D1/de active Active
- 2004-11-30 KR KR1020040099242A patent/KR100615549B1/ko active IP Right Grant
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DE3016069A1 (de) * | 1979-04-30 | 1980-11-13 | Advanced Coating Tech | Verfahren zur vakuumbeschichtung und fuer dieses verfahren geeignete vorrichtung |
US20020078892A1 (en) * | 2000-12-27 | 2002-06-27 | Nobuyuki Takahashi | Substrate processing device and through-chamber |
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WO2010128129A1 (de) * | 2009-05-08 | 2010-11-11 | Von Ardenne Anlagentechnik Gmbh | Durchlauf-vakuumbeschichtungsanlage |
Also Published As
Publication number | Publication date |
---|---|
KR100615549B1 (ko) | 2006-08-25 |
EP1571234B1 (de) | 2008-06-18 |
TW200528573A (en) | 2005-09-01 |
KR20050083126A (ko) | 2005-08-25 |
CN100396815C (zh) | 2008-06-25 |
ES2308085T3 (es) | 2008-12-01 |
US20050186346A1 (en) | 2005-08-25 |
JP4054003B2 (ja) | 2008-02-27 |
CN1657647A (zh) | 2005-08-24 |
DE502004007384D1 (de) | 2008-07-31 |
TWI248982B (en) | 2006-02-11 |
EP1571234A3 (de) | 2006-06-21 |
PT1571234E (pt) | 2008-09-30 |
US7638173B2 (en) | 2009-12-29 |
JP2005232584A (ja) | 2005-09-02 |
DE102004008598A1 (de) | 2005-09-15 |
DE102004008598B4 (de) | 2006-12-28 |
ATE398687T1 (de) | 2008-07-15 |
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