EP1546806A2 - Systeme de reserve, utilisation d'un systeme de reserve et procede de lithographie destine a la fabrication de composants a semiconducteurs - Google Patents

Systeme de reserve, utilisation d'un systeme de reserve et procede de lithographie destine a la fabrication de composants a semiconducteurs

Info

Publication number
EP1546806A2
EP1546806A2 EP03773450A EP03773450A EP1546806A2 EP 1546806 A2 EP1546806 A2 EP 1546806A2 EP 03773450 A EP03773450 A EP 03773450A EP 03773450 A EP03773450 A EP 03773450A EP 1546806 A2 EP1546806 A2 EP 1546806A2
Authority
EP
European Patent Office
Prior art keywords
resist system
resist
iodonium
exposure
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03773450A
Other languages
German (de)
English (en)
Inventor
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1546806A2 publication Critical patent/EP1546806A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Definitions

  • Resist system use of a resist system and lithography process for the production of semiconductor components
  • the invention relates to a resist system according to the preamble of claim 1, a use of a resist system according to claim 13 and a lithography method according to the preamble of claim 14.
  • CAR chemical amplification resists
  • the resists can work on the principle of acid catalytic cleavage.
  • a polar carboxylic acid group is formed from a non-polar chemical group, for example a carboxylic acid tert-butyl ester group, in the presence of a photolytically generated acid (Photo Acid Generator: PAG; photo acid generator).
  • Added bases can affect the diffusion length of the photo acid produced, which affects both
  • the exposed resist film is treated with aqueous alkaline developer solutions, the carbonic acid-rich, polar areas are developed away and the unexposed resist areas remain.
  • Resist materials that can resolve structures down to 65 nm in size will likely be required to manufacture DRAMs by 2007. For the year 2016, even a resolution of 22 nm DRAM 1/2 pitch will be necessary. With the currently used exposure wavelengths of 248 or 193 nm or also with the future wavelength of 157 nm, these structures can no longer be generated. For future generations of lithography, optical lithography will therefore advance into the extremely short-wave range of approximately 13 nm (EUV) or even into the X-ray range.
  • EUV extremely short-wave range
  • the present invention has for its object to provide a resist system and a lithography method, with which a high sensitivity is provided in particular in the EUV range, but at the same time there is no restriction of the process window due to undesired crosslinking in the resist system even at high exposure doses.
  • a resist system with the features of claim 1.
  • Structuring at wavelengths in the range from 0.1 to 150 nm can surprisingly be carried out with at least one polymer or copolymer with at least one acid-labile group.
  • the acid labile groups become under catalytic Action cleaved by acid and release polar groups, which then increase the solubility of the polymer / copolymer in developers, for example aqueous alkaline developers.
  • At least one acid-labile group is an ester group or a lactone group.
  • a substrate can be structured even without chemical reinforcing agents in a lithography process with wavelengths in the range from 0.1 to 150 nm.
  • the resist system according to the invention has a large process window since, even at high exposure doses, no crosslinking occurs, which leads to an insolubility of the resist. Even if one generally strives to use small exposure doses, the resist system according to the invention is less sensitive to fluctuations in the exposure due to the large process window.
  • methacrylate segment It is particularly advantageous if a t-butyl methacrylate and / or a 2-ethoxyethyl methacrylate is used as the methacrylate segment.
  • the sensitivity of the resist system can be improved if an iodine-containing and / or sulfur-containing photoacid generator is used as a chemical reinforcing agent.
  • At least one photoacid generator advantageously has an iodonium compound. It is particularly advantageous if at least one photoacid generator contains a di (tert-butylphenyl) iodonium triflate, di (tert-butylphenyl) iodonium hexaflate, di (tert-butylphenyl) iodonium nonaflate, diphenyliodonium triflate, diphenyliodonium hexaflate or diphenyliodonium nonaflate.
  • At least one photo acid generator has a sulfonium compound, in particular a triphenylsulfonium triflate, triphenylsulfonium hexaflate or triphenylsulfonium nonaflate.
  • the resist system according to the invention advantageously has a proportion of silicon, which leads to improved etching stability. It is particularly advantageous if the silicon can be introduced into the resist system in the form of a compound having a polymerizable carbon-carbon bond, in particular a trimethylalylsilane.
  • the object is also achieved by using the resist system and a method in which a resist system according to at least one of claims 1 to 12 is used.
  • the sensitivity is increased if a resist system with a chemical reinforcing agent which contains at least one iodine and / or sulfur-containing photo acid generator is used in the process according to the invention.
  • the exposure dose in the lithography process according to the invention can be between 0.1 and 300 mJ / cm 2 . Even massive overexposure (e.g. by a factor of 250) does not lead to crosslinking of the polymer in the resist system. It is particularly advantageous if the exposure dose during exposure is between 0.5 and 10 mJ / cm 2 .
  • the method according to the invention can be carried out at a wavelength of 0.1 to 150 nm. This covers the EUV range up to the X-ray range. It is particularly advantageous to use a wavelength of 13.4 nm.
  • a polymer is part of the
  • Resist system the polarity of which can be specifically changed.
  • a polymer that can then be used alone or together with photo acid generators as the resist system according to the invention.
  • the polymer is synthesized using radical polymerization. To do this
  • the reaction solution is allowed to cool to room temperature and 35.0 g (27.5 ml) of 2-propanol are added with vigorous stirring.
  • the solution obtained is dissolved in a solution of 10.5 g (13.1 ml) 2-butanone, 337.0 g (429 ml) 2-propanol and 329.0 g (329, 0 ml) of water.
  • the polymer precipitates as a fine, white powder.
  • the mixture is left to stir for a further 30 minutes and then the solvent is filtered off under a slightly reduced pressure over a G3 frit.
  • the white precipitate is washed with a solution of 16.0 g (20.0 ml) 2-butanone, 111.0 g (141 ml) 2-propanol and 100.0 g (100 ml) water and for 72 hours at 80 ° C dried in a high vacuum. About 38 g (75% of theory) of fine, white powder are obtained as the reaction product.
  • the analysis can be carried out by means of NMR, GPC or DSC.
  • a section of a structure is shown below as an example of a silicon-containing polymer of the resist system according to the invention:
  • a silicon-free polymer can be used:
  • the resist system is spun onto a silicon wafer (wafer) at 1000-5000 rpm and baked for 90 s at 130 ° C (PAB).
  • the layer thickness of the resist system after spin-coating at 3000 rpm is approximately 110 nm.
  • the exposure is carried out with EUV light of the wavelength 13.4 nm.
  • the exposure dose D 0 is 36.8 mj / cm 2 .
  • iodonium compounds have a structure (IR 2 ) X, where R is an organic radical, in particular can be an aryl group. X is a hydroxy group or a monovalent acid residue. Possible structures are, for example:
  • Straight or branched alkyl groups such as —CH 3 , C 2 H 5 , isopropyl or, for example, can serve as substituents R.
  • the substituents R can be identical or identical to one another.
  • the resist system is spun onto a silicon wafer (wafer) at 1000-5000 rpm and baked for 90 s at 130 ° C (PAB).
  • the layer thickness of the resist system is approximately 110 nm after spinning on at 3000 rpm.
  • the exposure is carried out with EUV light of the wavelength 13.4 nm.
  • the exposure dose D 0 is 1.4 mj / cm 2 .
  • the development takes place in a 2.38%
  • Tetramethylammonium hydroxide solution then the wafer is rinsed with distilled water and dried.
  • a second embodiment of the resist system according to the invention is thus produced.
  • the photo acid generator can also have sulfonium compounds which basically have the form [R 3 S] + X ⁇ .
  • sulfonium compounds which basically have the form [R 3 S] + X ⁇ .
  • a possible structure is, for example, a triphenyl sulfonium (TPS):
  • aromatic components may also have the substituents R listed in the example above.
  • a third exemplary embodiment of the resist system according to the invention is carried out analogously to Example 2, but triphenylsulfonium nonaflate [Ph 3 S + , CF 3 (CF 2 ) 3 S0 3 ⁇ ] is used instead of di (tert-butylphenyl) iodonium hexaflate as the photoacid generator.
  • the exposure dose is 2.4 mJ / cm 2 .
  • Example 4 (Resist system with triphenylsulfonium nonaflate and base) A fourth embodiment of the resist system according to the invention is produced analogously to Example 3, but additionally 3 mg
  • Triphenylsulfonium acetate was added as the base to the solution.
  • the exposure dose is 4.1 mJ / cm 2 .
  • the contrast behavior of this embodiment is the middle curve in FIG. 1 ("PAG + Base").
  • the sensitivity is also maintained by adding small amounts of base, even if the sensitivity is lower than in the left curve in FIG. 1, ie when using a polymer according to the invention with PAG without base.
  • a resist system is produced analogously to Example 2, with iodonium hexaflate as the photo acid generator instead of the di (tert-butylphenyl) iodonium
  • Diphenyliodonium triflate [Ph 2 J + , CF 3 S0 3 ⁇ ] is used.
  • the exposure dose is 1.3 mJ / cm 2 .
  • Example 6 Resist system with triphenylsulfonium triflate
  • a resist system is produced analogously to Example 2, triphenylsulfonium triflate [Ph 3 S + , CF 3 S0 3 ⁇ ] being used as the photo acid generator instead of the di (tert-butylphenyl) iodonium hexaflate.
  • the exposure dose is 0.8 mJ / cm 2 .
  • the left curve in FIG. 1 shows a contrast curve, which was determined with a resist system according to this exemplary embodiment. This makes it clear that the photo acid generator significantly improves the sensitivity, so that good results are achieved even with small exposure doses.
  • a resist system is produced analogously to Example 2, triphenylsulfonium hexaflate [Ph 3 S + , CF 3 CHF CF 2 S0 3 ⁇ ] being used instead of the di (tert-butylphenyl) iodonium hexaflate as the photoacid generator.
  • the exposure dose is 1.6 mJ / cm 2 .
  • Examples 2 to 7 listed show some combinations of the photo acid generators.
  • possible permutations of the triphenylsulfonium, diphenyliodonium and di (tert-butylphenyl) iodonium salts of trifluorosulfonic acid (triflates), hexafluorosulfonic acid (hexaflate) or nonafluorosulfonic acid (nonaflate) are suitable.
  • the embodiment of the invention is not limited to the preferred exemplary embodiments specified above. Rather, a number of variants are conceivable which make use of the resist system according to the invention and the lithography method according to the invention even in the case of fundamentally different types.

Abstract

L'invention concerne un système de réserve conçu pour des procédés de lithographie destinés à la fabrication d'éléments à semiconducteurs, à des longueurs d'onde de 0,1 à 150 nm. Ledit système de réserve est caractérisé en ce qu'il contient au moins un polymère ou copolymère comportant au moins un groupe instable à l'acide. L'invention concerne également l'utilisation d'un tel système de réserve ainsi qu'un procédé de lithographie. Selon l'invention, il est possible d'obtenir une sensibilité élevée, notamment dans le domaine des ultraviolets extrêmes, et d'éliminer toute réduction de la fenêtre de traitement due à une réticulation transversale non souhaitée dans le système de réserve, en cas d'exposition importante.
EP03773450A 2002-09-30 2003-09-19 Systeme de reserve, utilisation d'un systeme de reserve et procede de lithographie destine a la fabrication de composants a semiconducteurs Withdrawn EP1546806A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10246546 2002-09-30
DE2002146546 DE10246546B4 (de) 2002-09-30 2002-09-30 Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen
PCT/DE2003/003178 WO2004031858A2 (fr) 2002-09-30 2003-09-19 Systeme de reserve, utilisation d'un systeme de reserve et procede de lithographie destine a la fabrication de composants a semiconducteurs

Publications (1)

Publication Number Publication Date
EP1546806A2 true EP1546806A2 (fr) 2005-06-29

Family

ID=32010280

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03773450A Withdrawn EP1546806A2 (fr) 2002-09-30 2003-09-19 Systeme de reserve, utilisation d'un systeme de reserve et procede de lithographie destine a la fabrication de composants a semiconducteurs

Country Status (4)

Country Link
EP (1) EP1546806A2 (fr)
AU (1) AU2003281916A1 (fr)
DE (1) DE10246546B4 (fr)
WO (1) WO2004031858A2 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0919867B1 (fr) * 1997-11-28 2003-05-21 Infineon Technologies AG Photoréserve chimiquement amplifiée pour la lithographie par faisceau d'électrons
EP0955562A1 (fr) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Réserve chimiquement amplifiée
US6673523B2 (en) * 1999-03-09 2004-01-06 Matsushita Electric Industrial Co., Ltd. Pattern formation method
JP3299214B2 (ja) * 1999-03-12 2002-07-08 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP4139548B2 (ja) * 2000-04-06 2008-08-27 富士フイルム株式会社 ポジ型フォトレジスト組成物
KR100520186B1 (ko) * 2000-06-21 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
JP3853168B2 (ja) * 2001-03-28 2006-12-06 松下電器産業株式会社 パターン形成方法
DE10137109A1 (de) * 2001-07-30 2003-02-27 Infineon Technologies Ag Siliziumhaltiger Resist für die Fotolithografie
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004031858A3 *

Also Published As

Publication number Publication date
WO2004031858A3 (fr) 2004-07-01
AU2003281916A8 (en) 2004-04-23
DE10246546B4 (de) 2006-10-05
DE10246546A1 (de) 2004-04-15
WO2004031858A2 (fr) 2004-04-15
AU2003281916A1 (en) 2004-04-23

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