EP1529245A1 - Dispositif de realisation de photomasques - Google Patents

Dispositif de realisation de photomasques

Info

Publication number
EP1529245A1
EP1529245A1 EP03762666A EP03762666A EP1529245A1 EP 1529245 A1 EP1529245 A1 EP 1529245A1 EP 03762666 A EP03762666 A EP 03762666A EP 03762666 A EP03762666 A EP 03762666A EP 1529245 A1 EP1529245 A1 EP 1529245A1
Authority
EP
European Patent Office
Prior art keywords
repair
arrangement according
measuring
defect control
control system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03762666A
Other languages
German (de)
English (en)
Inventor
Thomas Engel
Wolfgang Harnisch
Peter Hoffrogge
Axel Zibold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss NTS GmbH
Carl Zeiss SMS GmbH
Original Assignee
Carl Zeiss NTS GmbH
Carl Zeiss SMS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss NTS GmbH, Carl Zeiss SMS GmbH filed Critical Carl Zeiss NTS GmbH
Publication of EP1529245A1 publication Critical patent/EP1529245A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Definitions

  • An AIMS system (Aerial Image Measurement System) is used to inspect photomasks in the respective process wavelength (Zeiss MSM 100, MSM 193, AIMS - fab).
  • photomasks or reticles e.g. Various manufacturing techniques and procedures are used in microlithography. There are e.g. binary masks, so-called halftone phase masks or pure phase masks. Such masks are produced on a substrate, one of the surfaces of the substrate or a layer applied to the substrate being structured during production. During the production of masks, particularly during the coating and structuring, and during mask handling, defects on the mask occur which are analyzed with the AIMS system.
  • an electron beam crossbeam system which can be used to repair transparent areas on the mask by e.g.
  • Chromium deposition is suitable (LEO Photo Mask Repair Tool).
  • the measurement and repair systems are integrated
  • a measuring system can be, for example, an AIMS system, a microscope, an AFM (atomic force microscope), a FIB system (focused ion beam) or an electron beam microscope. Because of the different imaging properties from light-optical to particle-optical or near-field systems, however, several systems can also be used as complementary control systems.
  • Repair systems can be:
  • FIG. 1 a shows schematically an AIMS system and a repair system RS
  • Electron beam-based repair tool or a repair system for material removal can be.
  • the respective control systems AS are shown schematically. These advantageously have a connection for data exchange via interfaces. In this way, the analysis of the AIMS system can be used to repair the mask immediately thereafter, and a new analysis and a new repair is also possible.
  • FIG. 1b additionally shows a central control unit ASZ, which acts as a "master system” and coordinates the measurement and repair process. It can also be “learnable” e.g. with a database system as a database for outputting repair suggestions for already known and pre-stored defects.
  • the sample handling is controlled, for example via a common table (not shown here) on which the masks are moved from the measuring system to the repair system.
  • the individual control units can also be combined and accommodated in the central control unit ASZ, as shown in FIG. 1c.
  • the measuring system and the repair system are accommodated in a common measuring chamber MK.
  • the data exchange takes place as in Fig.1.
  • the advantage lies in the fact that the conditions for the repair system (vacuum) can already be present in that the entire measuring chamber contains a vacuum so that the change from the measuring process to the repair process can be carried out very quickly.
  • a central control unit ASZ is provided.
  • Figure 3a-c shows an arrangement of a (diagonally arranged) repair system in a measuring system.
  • the measuring axis and the repair axis intersect in the object or at least there is an overlap of the field of view of the measuring system with the working area of the
  • a measurement can be carried out here during the repair and the repair can thus be aligned according to the measurement results.
  • AIMS - Access of the microscope
  • Measuring system for measurement in transmission so that the axes or working areas of
  • Imaging system because of the thickness of the mask substrate in the imaging path by appropriately adapted system optics and / or objectives.
  • a device CR for chromium removal by means of a laser is also provided in various variants, which is connected to the common control unit ASZ
  • This chrome removal system can either be installed on its own (5a) and track all possible repair mechanisms for this, since direct access to the chrome layer for chrome removal is possible.
  • a repair tool could also be an AFM or an ablative laser.
  • FIG. 5c since the arrangement from above is also selected there.
  • the combination by spatial connection or integration with the AIMS system was only shown as an example. This can be advantageous since there may be an indirect pre-positioning by means of optical observation.
  • the arrangement of the repair system is selected from below. Only repair procedures that work through the mask are possible here. This can e.g. the ablation with focused laser beam, since the layer on the mask typically shows a higher absorption and lower destruction threshold and thus ablates earlier without the mask being destroyed. The last part shows the integration in the transparency unit, because there e.g. the unattenuated laser beam is available.
  • the unit CR is integrated into the common measuring chamber MK, so that the optimal conditions for the repair units can be set for parallel measurement.
  • the requirement that the AIMS must be done under protective gas or in a vacuum There are e.g. at 157 nm / EUV the requirement that the AIMS must be done under protective gas or in a vacuum. Since the electron microscope also has to work in a vacuum, integration in a common chamber is possible in principle. Even with the longer working wavelengths, the AIMS system can be set up in a vacuum, so that it can be integrated in a measuring chamber with the repair system. In the event of severe contamination by the repair method, the two systems may have to be separated from one another by locks or partitions in order to prepare the vacuum, so that there is no mutual contamination. This is not shown in the picture here. But if you create common working conditions for electron beam ablation and AIMS, i.e.
  • FIGS. 6c and d show the embodiment shown in FIG. 3 with an intersection of the measurement and repair axis.
  • Operating the AIMS system alone in a vacuum is also advantageous, especially by excluding optical interference from the atmosphere.
  • An AIMS system in a generalized form would be a system that works with the imaging medium with which the template / photomask is also used in the production process is being used. This can be: light in Vis, UV, DUV or EUV, electrons, ions, X-rays.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

La présente invention concerne un dispositif et un procédé de réalisation de photomasques, au moins un système de détection de défauts étant relié à au moins un système de réparation par une liaison de données fixe ou une liaison en ligne, et le système de détection de défauts et le système de réparation étant reliés du point de vue des données de sorte que les résultats obtenus concernant l'un des systèmes sont directement à disposition de l'autre système pour traitement ultérieur. Selon l'invention, le système de détection de défauts transmet des défauts détectés par une liaison de données destinée à l'échange de données, au système de réparation qui commande le processus de réparation en fonction des défauts détectés, et l'invention présente l'avantage de comprendre un système AIMS en tant que système de détection de défauts et un système à faisceau d'électrons pour la détection des défauts.
EP03762666A 2002-07-09 2003-07-09 Dispositif de realisation de photomasques Withdrawn EP1529245A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10230755 2002-07-09
DE10230755A DE10230755A1 (de) 2002-07-09 2002-07-09 Anordnung zur Herstellung von Photomasken
PCT/EP2003/007401 WO2004006013A1 (fr) 2002-07-09 2003-07-09 Dispositif de realisation de photomasques

Publications (1)

Publication Number Publication Date
EP1529245A1 true EP1529245A1 (fr) 2005-05-11

Family

ID=29761750

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03762666A Withdrawn EP1529245A1 (fr) 2002-07-09 2003-07-09 Dispositif de realisation de photomasques

Country Status (5)

Country Link
US (1) US20060154150A1 (fr)
EP (1) EP1529245A1 (fr)
JP (1) JP2005532581A (fr)
DE (1) DE10230755A1 (fr)
WO (1) WO2004006013A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10332059A1 (de) * 2003-07-11 2005-01-27 Carl Zeiss Sms Gmbh Verfahren zur Analyse von Objekten in der Mikrolithographie
US20060147814A1 (en) * 2005-01-03 2006-07-06 Ted Liang Methods for repairing an alternating phase-shift mask
JP4754369B2 (ja) * 2006-02-28 2011-08-24 オムロンレーザーフロント株式会社 フォトマスクの欠陥修正方法及び欠陥修正装置
DE102006043874B4 (de) 2006-09-15 2020-07-09 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Reparatur von Photolithographiemasken
CN104317159A (zh) * 2010-03-03 2015-01-28 中芯国际集成电路制造(上海)有限公司 一种掩膜图形缺陷的检测方法及系统
CN102193302A (zh) * 2010-03-03 2011-09-21 中芯国际集成电路制造(上海)有限公司 一种掩膜图形缺陷的检测方法及系统
JP5659086B2 (ja) * 2011-05-30 2015-01-28 株式会社東芝 反射型マスクの欠陥修正方法
DE102011079382B4 (de) * 2011-07-19 2020-11-12 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske
DE102019124063A1 (de) * 2019-09-09 2021-01-07 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Herstellung und/oder Reparatur einer Maske für die Fotolithographie

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE80955T1 (de) * 1984-06-20 1992-10-15 Gould Inc Laserverfahren zur photomaskenreparatur.
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration
US4737641A (en) * 1985-08-16 1988-04-12 Siemens Aktiengesellschaft Apparatus for producing x-ray images by computer radiography
JPS6284518A (ja) * 1986-09-12 1987-04-18 Hitachi Ltd イオンビ−ム加工装置
JP2569057B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 Ｘ線マスクの欠陥修正方法
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system
US5424548A (en) * 1993-09-21 1995-06-13 International Business Machines Corp. Pattern specific calibration for E-beam lithography
US6353219B1 (en) * 1994-07-28 2002-03-05 Victor B. Kley Object inspection and/or modification system and method
US5541411A (en) * 1995-07-06 1996-07-30 Fei Company Image-to-image registration focused ion beam system
JPH0990607A (ja) * 1995-07-14 1997-04-04 Canon Inc 原版検査修正装置及び方法
TW331650B (en) * 1997-05-26 1998-05-11 Taiwan Semiconductor Mfg Co Ltd Integrated defect yield management system for semiconductor manufacturing
US6016357A (en) * 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
US6757645B2 (en) * 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US6091845A (en) * 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6069366A (en) * 1998-03-30 2000-05-30 Advanced Micro Devices, Inc. Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit
US6030731A (en) * 1998-11-12 2000-02-29 Micron Technology, Inc. Method for removing the carbon halo caused by FIB clear defect repair of a photomask
JP4442962B2 (ja) * 1999-10-19 2010-03-31 株式会社ルネサステクノロジ フォトマスクの製造方法
US6341009B1 (en) * 2000-02-24 2002-01-22 Quantronix Corporation Laser delivery system and method for photolithographic mask repair
US6322935B1 (en) * 2000-02-28 2001-11-27 Metron Technology Method and apparatus for repairing an alternating phase shift mask
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6548417B2 (en) * 2001-09-19 2003-04-15 Intel Corporation In-situ balancing for phase-shifting mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004006013A1 *

Also Published As

Publication number Publication date
WO2004006013A1 (fr) 2004-01-15
DE10230755A1 (de) 2004-01-22
JP2005532581A (ja) 2005-10-27
US20060154150A1 (en) 2006-07-13

Similar Documents

Publication Publication Date Title
DE102005063469B4 (de) Verfahren zum Untersuchen einer Lithographiemaske sowie Verwendung einer zugehörigen Vorrichtung
DE102017203879B4 (de) Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske
DE3850030T2 (de) Schutzring für ein durch differentiales Auspumpen abgedichtetes Gerät.
WO2010043398A1 (fr) Dispositif de lithographie euv et procédé pour traiter un élément optique
DE69428328T2 (de) Verfahren zur Elementaranalyse durch optische Emissionspektroskopie in einem durch Laser in Anwesenheit von Argon erweckten Plasma
DE112013003491T5 (de) Modellbildungs- und Analyse-Maschine für eine kombinierte auf Röntgenstrahlung und optisch basierte Metrologie
DE10142317B4 (de) Vorrichtung zur Bestimmung eines Überlagerungsfehlers und kritischer Dimensionen in einer Halbleiterstruktur mittels Streuungsmessung
DE102004013886A1 (de) Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
WO2004021085A1 (fr) Systeme partiel optique notamment destine a un dispositif d'eclairage de projection comportant au moins un element optique pouvant etre amene dans au moins deux positions
EP1529245A1 (fr) Dispositif de realisation de photomasques
DE102017208114A1 (de) Verfahren und Vorrichtung zum Teilchenstrahl-induzierten Ätzen einer photolithographischen Maske
DE102005057069A1 (de) Vorrichtung mit einem geladenen Partikelstrahl sowie Verfahren zur Kontaminationsbeseitigung in einer solchen Vorrichtung
DE102019124919A1 (de) Mikroskopisches System zur Prüfung von Strukturen und Defekten auf EUV-Lithographie-Photomasken
DE102019117964A1 (de) Lithographieanlage mit einer Überwachungseinrichtung für ein Pellikel
DE68916168T2 (de) Verfahren und Vorrichtung zur Analyse einer Oberfläche.
DE102006043874B4 (de) Verfahren und Vorrichtung zur Reparatur von Photolithographiemasken
EP0135673B1 (fr) Procédé et dispositif pour déterminer une coordonnée sur la surface d'un corps solide
WO1990004223A1 (fr) Procede et dispositif d'usinage de surfaces au moyen de rayonnements electromagnetiques
DE602004007409T2 (de) Verfahren zum Verbinden mindestens zweier Glieder
DE102018122652A1 (de) Spektralauflösende, hochauflösende 3D-Lokalisierungmikroskopie
DE102018200118A1 (de) Vorrichtung und Verfahren zur ldentifikation von Verunreinigungen
DE102022204995A1 (de) Verfahren zur inspektion von oberflächen und erfassung von kontaminationen
DE102020216518B4 (de) Endpunktbestimmung mittels Kontrastgas
DE10313644A1 (de) Vorrichtung und Verfahren zum Reduzieren der elektronenstrahlinduzierten Abscheidung von Kontaminationsprodukten
DE102023110173B3 (de) Messvorrichtung und Verfahren zur Inspektion von für EUV-Mikrolithografie bestimmten Fotomasken

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20050203

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20060801