EP1516167A1 - Detecteur et son procede de production - Google Patents

Detecteur et son procede de production

Info

Publication number
EP1516167A1
EP1516167A1 EP03759809A EP03759809A EP1516167A1 EP 1516167 A1 EP1516167 A1 EP 1516167A1 EP 03759809 A EP03759809 A EP 03759809A EP 03759809 A EP03759809 A EP 03759809A EP 1516167 A1 EP1516167 A1 EP 1516167A1
Authority
EP
European Patent Office
Prior art keywords
sensor
pressure
membrane
semiconductor material
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03759809A
Other languages
German (de)
English (en)
Inventor
Roland Guenschel
Richard Muehlheim
Bernhard Zappel
Stefan Pinter
Hubert Benzel
Joerg Muchow
Kurt Weiblen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1516167A1 publication Critical patent/EP1516167A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

Definitions

  • the invention relates to a sensor made of a semiconductor material and a method for producing a sensor according to the preamble of the independent claims.
  • Micromechanical silicon pressure sensors are already known, a membrane being produced by the introduction of a cavern in a silicon chip.
  • Such a silicon sensor is disclosed, for example, in German published patent application DE 199 57 556.
  • the cavern is generated for example by anisotropic KOH etching.
  • the sensor according to the invention and the method according to the invention with the features of the independent claims has the advantage that a simple and cost-effective design for the production of a sensor is proposed.
  • the sensor according to the invention is used to measure high pressures, the sensor according to the invention nevertheless having a high overload safety.
  • the sensor according to the invention has the advantage that the influence of temperature is low and the temperature hysteresis is small.
  • the pressure sensor according to the invention is provided in particular as a piezoresistive pressure sensor.
  • a high bursting safety of the pressure sensor according to the invention, ie the suitability of the pressure sensor for measuring high pressures, is achieved in particular by a large aspect ratio of the cavity taken out of the semiconductor material from its rear side.
  • the inventive large aspect ratio is in particular by means of a Trench etching brought about. Furthermore, it is advantageous that when using a Trencheauluies the transition radii from the cavern wall to the membrane are large compared to the anisotropic etching, whereby the mechanical stresses in the material can be reduced and thus the allowable pressure load can be increased. According to the invention, however, it is also envisaged to use an isotropic etching process, for example by means of etching with acids, in order to obtain large transition radii. In the case of isotropic etching, however, the transition radii are sometimes so great that the stress under pressure or the elastic deformation of the membrane on the upper side or front side of the semiconductor material is so small that the pressure sensitivity is thereby small.
  • means for measuring the deformation of the membrane region are provided on the front side of the semiconductor material. This is an accurate, relatively temperature-independent, stable and sensitive measurement of a force, which deforms the membrane, in particular a pressure, possible.
  • piezoelectric resistors are provided according to the invention in particular, but measuring resistors or measuring means based on another effect can also be provided.
  • an evaluation circuit it is particularly advantageous for an evaluation circuit to be monolithically integrated in the semiconductor material together with the membrane.
  • the sensor according to the invention can be produced more cheaply and manufactured with greater accuracy.
  • FIG. 1 shows a known micromechanical silicon pressure sensor according to the prior art
  • Figure 2 shows a semiconductor substrate with a sensor according to the invention
  • Figure 3 shows a first construction variant of the sensor according to the invention
  • Figure 4 shows a second construction variant of the sensor according to the invention
  • Figure 5 shows a third construction variant of the sensor according to the invention
  • Figure 6 shows a fourth construction variant of the sensor according to the invention
  • Figure 7 shows a fifth construction variant the sensor according to the invention.
  • FIG. 1 shows the generally common structure of micromechanical silicon pressure sensors.
  • a silicon substrate 150 is provided with a cavity 155, which leaves a membrane not provided with a reference numeral.
  • the silicon substrate 150 is connected to a drilled glass 140, which is soldered to a base 120 with a solder 130.
  • the base 120 is connected to a pressure connection pipe 110.
  • measuring resistors not provided with a reference numeral and located on the upper side of the silicon substrate 150 are connected via one or more bonding wires 160 to a connection pin 170, which are electrically separated from the base 120 by means of an indentation 180.
  • Cavity 155 of the silicon sensor has a typical etched slope that is approximately truncated pyramidal. This results in a trapezoidal cross-section.
  • This truncated pyramidal recess below the sensor membrane results from the use of a silicon substrate which has a (100) orientation because a KOH etch has different etch rates in different crystal directions.
  • a disadvantage in the known silicon sensor proves that the pressure-engaging surface, the truncated pyramidal recess at its largest cross-section, ie at the back of the silicon substrate, is authoritative. Furthermore, it proves disadvantageous that an edge is formed in the transition region between the bevelled side surface of the truncated pyramidal recess and the membrane surface, which has a very small radius.
  • the silicon sensor in the prior art has only a low bursting pressure.
  • the silicon chip 150 is anodically bonded to a glass intermediate layer 140 of sodium-containing glass, such as Pyrex and soldered by means of a solder 130 on a metal base 120.
  • the transition radii between the cavity edge and the membrane are very small due to the etching method used, for example KOH etching, which results in high mechanical stresses at the transition, which reduce the bursting strength. This is especially true for the time-etched membranes for higher pressure ranges, since there the radii are particularly small.
  • the anisotropic etching process results in shallow cavern walls, i. Cavern walls with a low aspect ratio, in particular a slope of 54 degrees. This creates a large opening in the silicon. The larger this area, the more force is applied to the chip when pressure is applied.
  • the bonding area i. the bonding area between the silicon sensor 150 and the glass 140 becomes smaller, thereby increasing the surface load in the pulling direction. This leads to a low pressure resistance.
  • the construction of a pressure sensor by means of a glass intermediate layer therefore represents a limitation of the bursting strength.
  • a PN-etching stop is used for the generation of the cavern 155 or for the production of very thin membranes.
  • the membrane must be designed to have a very small edge length. This can only happen up to a certain limit, because the membrane can not be made smaller than the extent of the piezo-resistive resistors.
  • the etching stop must be omitted and a "thick" membrane etched on time.
  • FIG. 2 shows the semiconductor sensor 50 according to the invention.
  • a semiconductor substrate 51 which is provided in particular as a silicon substrate 51, has a front side 58 and a rear side 59. From its rear side 59, the semiconductor substrate 51 is treated such that it forms different thicknesses in different areas.
  • the semiconductor substrate 51 is formed in a first region not denoted by a reference numeral in a first thickness provided with the reference numeral 52 and in a membrane region provided with the reference numeral 54 in a second thickness designated by the reference numeral 53 educated.
  • the first thickness 52 is greater than the second thickness 53.
  • the depression provided on the rear side 59 of the semiconductor substrate 51 for producing the thinner membrane region 54 has in its "wall region" a transitional region provided with the reference numeral 55 in FIG Membrane region 54 has a radius provided with the reference numeral 550 in Figure 2.
  • the wall of the transition region 55 is shown in an enlarged view in Figure 2, in which a specific surface structure 56 can be seen for the method used in the production of the recess or cavern, which is introduced into the rear side 59 of the silicon substrate 51 for producing the membrane region 54, is provided with the reference numeral 500 in FIG.
  • the transition area 55 between the first thickness 52 and the second thickness 53 has a high aspect ratio according to the invention, ie its depth is large compared to its lateral extent, so that the "walls" of the transition area 55 are comparatively steep
  • the pressing action comes from the back 59 forth, only a lower compressive force is applied to the semiconductor substrate 51 from the back 59 forth than in the truncated pyramid cavern 155 of the prior art, because the pressure application area around the 1.
  • the introduction of the cavern 500 into the semiconductor substrate 51 by means of a trench etching process has the advantage that the radii of curvature 550 large ge are nug, so that arise between the transition region 55 and the membrane region 54 in the load case no excessive voltage spikes in the substrate material.
  • This makes it possible to increase the pressure load of the semiconductor sensor 50 and to make this technology available for higher pressures.
  • an isotropic etching process for example by means of etching with acids, used to obtain large transition radii 550.
  • these radii 550 are partially so great in isotropic etching that, because of the resulting lower deformation of the diaphragm region 54, a lower pressure sensitivity of the sensor 50 results.
  • the edge region of the transition region 55 has a characteristic surface structure 56 which is caused by the fact that, in the trench etching process, the depth of the cavern 500 is alternately increased with accelerated charged particles and the surface of the cavity 500 is passivated.
  • the inventively large aspect ratio is caused because during the etching phases of the trench etching process, preferably the membrane region 54 is etched away from its rear side and the passivated sidewalls of the transition region 55 remain.
  • Trenching with a high aspect ratio produces quasi-perpendicular cavern walls in the transitional region 55, as a result of which a high bursting compressive strength is achieved because essentially only the membrane region 54 is suitable as a pressure application surface.
  • construction variants which are particularly suitable for sensors that can withstand higher pressures.
  • Such construction variants are characterized according to the invention in that comparatively large transition radii 550 are provided between the transition region 55 and the membrane region 54, that the cavern walls in the transition region 55 are steep or vertical, and that no glass is used in the construction technique or glass is avoided.
  • the pressure range for the sensor 50 according to the invention can be extended to the order of 1000 bar.
  • the sensor according to the invention represents a cost-effective variant of previous sensors for this magnitude of pressures.
  • capacitive sensors also with this method and improve to avoid temperature-induced deformation of the sensor chip. In capacitive sensors leads a deformation of the sensor chip, ie in particular the Membrane region 54, to a deflection of the membrane, which ultimately means a change in the output signal.
  • intermediate plates are provided with an adapted temperature expansion coefficient.
  • the coefficient of thermal expansion of such intermediate plates on a pedestal should be chosen so that it lies between that of the base and the subsequent intermediate plate.
  • the coefficient of thermal expansion of the intermediate plate connected to the silicon chip 50 should preferably match the coefficient of thermal expansion of the semiconductor material used, i. in particular of the silicon, in order to transmit as little as possible thermal expansion effects to the sensor 50.
  • it can be soldered or glued. Another possibility is to weld together the base and the first intermediate plate and also to weld the other intermediate plates together.
  • FIG. 3 shows a first construction variant of the sensor according to the invention.
  • the sensor chip 50 is fastened on a base 20 by means of a solder layer 30.
  • the glass intermediate plate is dispensed with and the chip 50 is fastened directly, ie only by means of a thin intermediate layer 30, on the base 20.
  • the chip 50 can be glued or metallized and soldered on the back.
  • the material of the base 20 is particularly important because it must have a coefficient of thermal expansion close to that of the silicon chip 50.
  • the materials “Kovar”, “Invar”, “Vakodil” are used singly or in combination with one another as the material for the base 20.
  • the base 20 is in particular a TO8 socket or in another form, for example as a socket with a screw-in thread As is shown in FIG. 3, the base 20 is connected to a pressure connection tube 10, which no longer applies the pressure on the backside of FIG designated membrane region 54 passes.
  • one or more bonding wires 60 are provided, which comprise the measuring resistors provided on the front side of the semiconductor chip 50 and also not shown in FIG.
  • connection pin 70 or a printed circuit board 71 (FIG ), wherein the terminal pin 70 is provided by an insulation 80, which is provided in particular as a glaze, electrically isolated from the base material, if the terminal pin 70 is passed through the base 20.
  • insulation 80 which is provided in particular as a glaze, electrically isolated from the base material, if the terminal pin 70 is passed through the base 20.
  • Any metal solder such as AuSn20 or SnCu3In0.5 or glass solder can be used as solder.
  • FIG. 4 shows a second construction variant of the sensor according to the invention is shown, in which the base 20 made of a material with arbitrary
  • Thermal expansion coefficient such as steel
  • the pressure connection tube 10 connected to the base 20, is provided.
  • a first intermediate plate 32 which consists of a material having an adapted temperature expansion coefficient.
  • the intermediate plate 32 is either glued or soldered with respect to the sensor chip 50 or the base 20 or also, in particular by laser welding, welded. This results in the first intermediate layer 30 between the base 20 and the first intermediate plate 32 and the second intermediate layer 34 between the first intermediate plate 32 and the sensor chip 50th
  • the material of the first intermediate plate 32 may also consist of silicon or polysilicon according to the second embodiment of the invention. Furthermore, the connection between the silicon chip and the intermediate plate can also be effected by anodic bonding, if a pyrex layer applied to the chip 50 or the intermediate plate 32 is applied as the second intermediate layer 34. The connection between the first intermediate plate 32 and the base 20 can be filled with soft solder for thermal decoupling.
  • FIG. 5 additionally shows a protective cap 90 which protects the structure of the sensor 50 on the base 20.
  • the first intermediate layer 30, the first intermediate plate 32 and the second intermediate layer 34 are shown in FIG.
  • a material is preferably used which has a coefficient of thermal expansion which lies between the temperature expansion coefficient of the base 20 and the coefficient of thermal expansion of the second intermediate plate 36. This ensures that the different length expansions over the temperature of the materials used are distributed to the different levels of the intermediate plate stack, whereby the maximum mechanical stresses in the materials can be kept small. This leads to a low temperature influence of the sensor and a low temperature hysteresis or drift, at the same time high bursting strength.
  • the protective cap 90 is located, the open or pressure-tight closed, for example, vacuum-tight welded, may be designed to realize a reference, differential or absolute pressure sensor.
  • the cap 90 can be designed so that its bursting strength is above the bursting strength of the silicon membrane, whereby leakage of the structure or bursting of the membrane can be avoided.
  • FIG. 6 shows a fourth construction variant of the pressure sensor.
  • the chip 50 is mounted on a discharge nozzle.
  • the pressure connection can, as shown here by way of example, be carried out with a screw thread 6 and a cone seal 5, but also be realized by means of a nozzle with O-ring seal or the like.
  • the same reference numerals in FIG. 5 again denote the same parts or elements of the sensor or the sensor structure.
  • a printed circuit board 71 is provided in FIG. 6, which is connected by means of the or more bonding wires 60 to the pressure measuring means located on the front side of the sensor membrane.
  • the chip 50 is thus electrically over the Circuit board 71 is connected, which in turn is connected to a plug 72 in the protective cap 90.
  • FIG. 7 shows a fifth construction variant with a brazed intermediate socket 33.
  • the in turn existing base 20 and the intermediate socket 33 are erfmdungshunt in the fifth construction variant by means of the first intermediate layer 30 in particular brazed and connected together such that the first intermediate layer 30 is loaded with increasing pressure on the sensor 50 to pressure.
  • the second intermediate layer 34 By means of the second intermediate layer 34, the chip 50 is then connected to the intermediate socket 33.
  • the second intermediate layer 34 is provided in particular from a creep-resistant solder and also brazed.
  • solder of the first intermediate layer 30 is loaded in the fifth construction variant on pressure, it is according to the invention also possible to provide the first intermediate layer 30 with soft solder in the fifth construction variant, since this, in the event that it is subjected to pressure, can also withstand very high pressures.

Abstract

L'invention concerne un détecteur qui convient à la mesure de pressions élevées et son procédé de production. Selon l'invention, on pratique une cavité (500) ayant un grand rapport d'aspect dans un matériau semi-conducteur (51).
EP03759809A 2002-06-12 2003-02-13 Detecteur et son procede de production Withdrawn EP1516167A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10226034 2002-06-12
DE10226034A DE10226034A1 (de) 2002-06-12 2002-06-12 Sensor und Verfahren zur Herstellung eines Sensors
PCT/DE2003/000422 WO2003106955A1 (fr) 2002-06-12 2003-02-13 Detecteur et son procede de production

Publications (1)

Publication Number Publication Date
EP1516167A1 true EP1516167A1 (fr) 2005-03-23

Family

ID=29594418

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03759809A Withdrawn EP1516167A1 (fr) 2002-06-12 2003-02-13 Detecteur et son procede de production

Country Status (4)

Country Link
EP (1) EP1516167A1 (fr)
JP (1) JP2005529347A (fr)
DE (1) DE10226034A1 (fr)
WO (1) WO2003106955A1 (fr)

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
DE102004058877A1 (de) * 2004-12-06 2006-04-13 Infineon Technologies Ag Halbleiterchip und Verfahren zum Herstellen eines doppelseitig funktionellen Halbleiterchips
DE102007023383A1 (de) 2007-05-18 2008-11-20 Robert Bosch Gmbh Drucksensor mit umschaltbarem Druckbereich
DE102007026450A1 (de) 2007-06-06 2008-12-11 Robert Bosch Gmbh Sensor mit Nut zur mechanischen Stress Reduzierung und Verfahren zur Herstellung des Sensors
DE102008041942A1 (de) 2008-09-10 2010-03-11 Robert Bosch Gmbh Sensoranordnung, Verfahren zum Betrieb einer Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
DE102008043382B4 (de) * 2008-11-03 2017-01-19 Robert Bosch Gmbh Bauelement und Verfahren zu dessen Herstellung
DE102009045158A1 (de) 2009-09-30 2011-04-07 Robert Bosch Gmbh Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
DE102011075822B4 (de) * 2011-05-13 2016-07-14 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Vorrichtung zur kapazitiven Druckbestimmung
CN103674397B (zh) * 2013-12-03 2016-04-20 新会康宇测控仪器仪表工程有限公司 高过载背压式绝压传感器模块及其制造工艺
DE102014113083A1 (de) * 2014-09-11 2016-03-17 Endress + Hauser Gmbh + Co. Kg Drucksensor
DE102015121625A1 (de) * 2015-12-11 2017-06-14 Endress+Hauser Gmbh+Co. Kg Verfahren zur Herstellung einer Druckmesseinrichtung
DE102021107078A1 (de) 2021-03-22 2022-09-22 Endress+Hauser SE+Co. KG Vorrichtung aus einem ersten Bauteil und einem zweiten Bauteil

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US3230763A (en) * 1962-12-27 1966-01-25 Honeywell Inc Semiconductor pressure diaphragm
DE69210041T2 (de) * 1991-12-13 1996-10-31 Honeywell Inc Entwurf von piezoresistivem drucksensor aus silizium
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor

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Also Published As

Publication number Publication date
WO2003106955A1 (fr) 2003-12-24
JP2005529347A (ja) 2005-09-29
DE10226034A1 (de) 2003-12-24

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