EP1460710B1 - Microwave element used for dissipation or attenuation of energy - Google Patents

Microwave element used for dissipation or attenuation of energy Download PDF

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Publication number
EP1460710B1
EP1460710B1 EP04290686.7A EP04290686A EP1460710B1 EP 1460710 B1 EP1460710 B1 EP 1460710B1 EP 04290686 A EP04290686 A EP 04290686A EP 1460710 B1 EP1460710 B1 EP 1460710B1
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EP
European Patent Office
Prior art keywords
resistive layer
region
fact
substrate
ground
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EP04290686.7A
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German (de)
French (fr)
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EP1460710A1 (en
Inventor
André Fournier
Laurent Boillot
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Radiall SA
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Radiall SA
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/22Attenuating devices
    • H01P1/227Strip line attenuators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/24Terminating devices
    • H01P1/26Dissipative terminations
    • H01P1/268Strip line terminations

Definitions

  • the present invention relates to a microwave device for the dissipation or attenuation of power.
  • the present invention relates in particular to a resistive load device of medium to high power, that is to say of the order of a few watts to 200 Watts, in particular for use in base stations of cellular radio or local networks wireless type WLAN.
  • Such a device used in a microwave system, serves in particular to dissipate, in the event of a malfunction, in the form of heat, the non-active energy of the system, in particular the energy transported in a microwave line.
  • Such a microwave line may be constituted by a dielectric substrate, one side carries a conductive strip and the other side a metal ground area, the conductive strip being connected to a resistive layer deposited on the substrate.
  • microstrip This embodiment is generally referred to as "microstrip".
  • the impedance of such a microwave line is generally 50 Ohms.
  • the resistive load device may be housed in a housing connected to the system by a cable, which allows the device to be in contact with a cooling radiator. This device is commonly called remote load.
  • the device can be attached directly to a system equipment, for example on a circuit thereof.
  • the patent EP 0 092 137 discloses a resistive load device having an insulating substrate on which adjacent resistive layers in the form of circular sectors are deposited.
  • the outer arc of a resistive layer constitutes the input of the device and the inner arc the output. This device aims to allow a uniform and greater dissipation of the caloric power.
  • the patent application FR 2,486,720 describes a device for terminating a microwave transmission line, comprising a dielectric substrate with, on one side, a resistive layer constituting a termination charge.
  • the resistive layer may have a trapezoid shape whose large base constitutes the input for the microwave line and whose small base is connected to a mass metallization.
  • a conductive, transverse strip may be deposited on the resistive layer, in contact with the conductive strip and connecting two metallizations for forming with a ground plane two capacitors.
  • the patent US 6,326,862 discloses an electrical termination system having a housing in which is disposed a dielectric substrate carrying a termination circuit element.
  • the housing has a relatively high first cavity, above the junction of the inner conductor of the coaxial cable on the dielectric substrate. This first cavity opens into a second cavity of lower height. This double cavity aims to correct the impedance defects.
  • the patent US 4,267,531 discloses a device comprising a resistive film sandwiched between two dielectrics, on which sheets are arranged.
  • the present invention aims in particular to provide a new microwave device, including a resistive charging device, type "microstrip”, to substantially reduce impedance defects, and this for a wide frequency range.
  • the invention thus relates to a microwave device, in particular a resistive load device or an attenuator, intended for power dissipation or attenuation, as defined in claims 1 or 13.
  • the first region may have a dimension transverse to the axis of the resistive layer, lower than that of the second region.
  • the capacitive fault at the input of the resistive layer is reduced.
  • the or each first region of the resistive layer has a shape converging towards the conductive strip, this first region may for example be substantially trapezoidal, the conductive strip or strips connecting to the resistive layer by the small base of the trapezoid.
  • the entire resistive layer may have a substantially trapezoidal shape, in which case the ground area is connected to this layer by the large base of the trapezium.
  • the second region is substantially rectangular and the mass zone is connected to this region by one side of the rectangle.
  • the resistive layer comprises two first regions each connected to a conductive strip and to a second rectangular central region connected to the ground zone.
  • the invention makes it possible to reduce the impedance defects by covering the resistive layer, at least partially, by a ground plane connected to the mass zone and isolated from the ground. resistive layer by an insulating layer.
  • the invention by combining the aforementioned forms of the resistive layer and the presence of the ground plane above the resistive layer, a reduction of the capacitance and induction defects is obtained, thus a better microwave adaptation, for frequencies up to about 8 GHz.
  • the device according to the invention may have a relatively low cost.
  • the ground plane does not completely cover the input region, being set back from the junction between the or a conductive strip and the resistive layer or layers.
  • the ground plane can completely cover the second region of the resistive layer or layers.
  • the ground plane extends transversely over the entire width of the resistive layer or layers.
  • the above ground plane advantageously comes into electrical contact with the ground zone, at the rear of the resistive layer.
  • the abovementioned ground plane connects to lateral zones of mass extending on slices of the substrate, in particular those which are parallel to the axis of the resistive layer.
  • These lateral zones of mass may consist of metallizations carried out on these slices.
  • the insulating layer may be a layer of glass deposited for example by screen printing on the resistive layer.
  • the mass zone on the substrate may be connected to a mass range on the other side of the substrate, in particular by one or more metallizations on a wafer of the substrate or, alternatively, by metallized bores made in the thickness of the substrate.
  • the device comprises an insert comprising a conductive wall that is applied to the insulating layer and defines the ground plane.
  • the insert comprises at least one lateral conductive arm connected to the ground plane and adapted to be applied on a wafer of the substrate and optionally, if necessary, on one side. aforementioned lateral conductive tracks.
  • the insert may comprise at least one elastically deformable and conductive tab adapted to be applied on a wall of the housing, thereby providing the electrical connection between the ground plane of the device and the wall of the housing .
  • the insert may also be arranged to retain the substrate on the bottom of the housing.
  • a metallurgical bond for example brazing
  • the substrate on the bottom of the housing its maintenance in the housing being of a mechanical nature.
  • the substrate can then be devoid of metallization on its face opposite to that carrying the resistive layer, the ground plane being connected to the body of the housing.
  • the insert may for example comprise at least one fixing portion for fixing it, in particular by brazing on a support.
  • the invention may comprise at least one elastically deformable and conductive tab adapted to be applied on a wall of a housing.
  • the insert may comprise at least one fixing part for fixing it, in particular by brazing, to a support.
  • the first region has a dimension transverse to the longitudinal axis of the resistive layer, lower than that of the second region.
  • the device may comprise two conductive strips and the resistive layer comprise two first trapezoidal regions each connected to a conductive strip and a second central rectangular region connected to the ground area.
  • a device 1 forming a microwave resistive load intended for power dissipation comprising a resistive layer 2 deposited on a face 4 of an insulating substrate 3, the resistive layer 2 being connected, on the one hand, to a conductive strip 5 and, on the other hand, to a mass zone 6 also deposited on the face 4 of the insulating substrate 3.
  • the device 1 is intended to be used in a microwave system.
  • the substrate 3 may be made of ceramic, in particular alumina or aluminum nitride (A1N).
  • the substrate 3 forms with the conductive strip 5 and a mass range 8 located on a face 7 opposite the face 4 a microwave line.
  • the mass range 8 can be brewed on a support, not shown.
  • the ground area 6 can be connected to the ground area 8 by one or more metallizations made on a wafer 3a of the substrate 3 or by metallized bores made in the thickness of the substrate 3.
  • the resistive layer 2 may be deposited on the substrate 3 by screen printing or in a thin layer, for example.
  • the resistive layer 2 comprises an input region 2a having a substantially isosceles trapezoidal shape, the conductive strip 5 being connected to this region 2a by the small base 10 of the trapezium.
  • the region 2a extends, on the opposite side to the small base 10, by a rectangular region 2b whose long side coincides with the large base of the trapezium.
  • the mass zone 6 is connected to the resistive layer 2 along a long side 11 of the rectangle.
  • the resistive layer 2 has a longitudinal axis X which is, in this example, parallel to the conductive strip 5.
  • This particular form of the resistive layer 2 notably makes it possible to reduce the capacitive defects at the input of the resistive layer.
  • FIGS. Figures 2 and 3 To further improve the microwave adaptation of the device 1, it is possible, as illustrated in FIGS. Figures 2 and 3 to extend the mass zone 4 by a ground plane 12 partially covering the resistive layer 2.
  • the resistive layer 2 is entirely covered with an insulating layer 13, which is constituted for example by a layer of glass deposited by screen printing.
  • the ground plane 12 has a rectangular shape of length substantially equal to the width of the substrate.
  • the ground plane 12 covers the ground area 6 and is set back from the small base 10 of the trapezium.
  • the ground plane 12 completely covers the region 2b of the resistive layer 2 and leaves clear the junction portion between the conductive strip 5 and the resistive layer 2.
  • the ground plane 12 is made from a conductive paste deposited on the insulating layer 13.
  • the ground area 6 can be connected to two lateral conductive tracks 14, 15, parallel to the axis X.
  • the ground plane 12 comes to cover these tracks 14, 15, being in contact with them.
  • the slices 3a of the substrate 3 parallel to the X axis may be metallized and be electrically connected to the ground plane 12.
  • the device 1 ' is housed in a housing 20, which may be remote from the microwave system to be brought into contact with a cooling radiator in particular.
  • the device 1 'differs from the device 1 previously described in that the ground plane does not consist of a layer of a conductive material deposited on the substrate, but is defined by a central wall 23 of a metal insert 22 being applied to the substrate 3.
  • the conductive strip 5 is intended to be connected to the central conductor of a coaxial cable 21 mounted at one end on the housing 20.
  • the insert 22 comprises on either side of the central wall 23 two lateral arms 24 intended to be applied on two parallel edges of the substrate 3 and on the conductive tracks 14, 15. These arms 24 each comprise a portion 24a vertical application on a wafer of the substrate 3.
  • the insert 22 has on its upper face an elastically deformable and conductive tab 25 adapted to be applied on a conductive cover 26 of the housing 20. According to the invention, it is possible to provide a plurality of conductive tabs 25.
  • the resistive layer 2 is obtained by depositing a conductive paste on the substrate 3.
  • the insert 22 in the example considered, keeps the substrate 3 on the bottom of the housing 20, the maintenance being of a mechanical nature.
  • the lug or tabs 25 also make it possible to make an electrical contact between the ground zone 6 and the housing 20.
  • the insert 22 ' may be free of an elastically deformable tab 25 and its lateral arms 24' may have extensions 31 allowing brazing the insert 22 on a support 30.
  • This support 30 may be constituted by a circuit or a metal flange fixed on the equipment of the system, for example.
  • the microwave device according to the invention can be further arranged as an attenuator.
  • An embodiment of an attenuator device is illustrated in FIG. figure 6 .
  • the resistive layer 2 ' has a symmetrical configuration comprising two trapezoidal regions 2'a connected by their large bases to the long sides of a rectangular central region 2'b whose short sides are connected to the ground.
  • the trapezoidal regions 2'b are connected by their small bases to conductive strips 5.

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Description

La présente invention a pour objet un dispositif hyperfréquence destiné à la dissipation ou à l'atténuation de puissance.The present invention relates to a microwave device for the dissipation or attenuation of power.

La présente invention concerne notamment un dispositif formant charge résistive de moyenne à forte puissance, c'est-à-dire de l'ordre de quelques Watts à 200 Watts, notamment pour une utilisation dans des stations de base de radiocommunication cellulaire ou de réseaux locaux sans fil de type WLAN.The present invention relates in particular to a resistive load device of medium to high power, that is to say of the order of a few watts to 200 Watts, in particular for use in base stations of cellular radio or local networks wireless type WLAN.

Un tel dispositif, utilisé dans un système hyperfréquence, sert notamment à dissiper, en cas de dysfonctionnement, sous forme de chaleur, l'énergie non active du système, notamment l'énergie transportée dans une ligne hyperfréquence.Such a device, used in a microwave system, serves in particular to dissipate, in the event of a malfunction, in the form of heat, the non-active energy of the system, in particular the energy transported in a microwave line.

Une telle ligne hyperfréquence peut être constituée par un substrat diélectrique dont une face porte une bande conductrice et l'autre face une plage métallique de masse, la bande conductrice étant reliée à une couche résistive déposée sur le substrat.Such a microwave line may be constituted by a dielectric substrate, one side carries a conductive strip and the other side a metal ground area, the conductive strip being connected to a resistive layer deposited on the substrate.

Cette réalisation est généralement désignée sous le terme « microstrip ».This embodiment is generally referred to as "microstrip".

L'impédance d'une telle ligne hyperfréquence est en général de 50 Ohms.The impedance of such a microwave line is generally 50 Ohms.

Le dispositif formant charge résistive peut être logé dans un boîtier relié au système par un câble, ce qui permet de disposer le dispositif au contact d'un radiateur de refroidissement. Ce dispositif est communément appelé charge déportée.The resistive load device may be housed in a housing connected to the system by a cable, which allows the device to be in contact with a cooling radiator. This device is commonly called remote load.

En variante, le dispositif peut être fixé directement sur un équipement du système, par exemple sur un circuit de celui-ci.Alternatively, the device can be attached directly to a system equipment, for example on a circuit thereof.

Le brevet EP 0 092 137 décrit un dispositif formant charge résistive comportant un substrat isolant sur lequel sont déposées des couches résistives adjacentes en forme de secteurs de cercle. L'arc extérieur d'une couche résistive constitue l'entrée du dispositif et l'arc intérieur la sortie. Ce dispositif vise à permettre une dissipation uniforme et plus importante de la puissance calorique.The patent EP 0 092 137 discloses a resistive load device having an insulating substrate on which adjacent resistive layers in the form of circular sectors are deposited. The outer arc of a resistive layer constitutes the input of the device and the inner arc the output. This device aims to allow a uniform and greater dissipation of the caloric power.

La demande de brevet FR 2 486 720 décrit un dispositif de terminaison d'une ligne de transmission en hyperfréquence, comportant un substrat diélectrique avec, sur une face, une couche résistive constituant une charge de terminaison. La couche résistive peut présenter une forme de trapèze dont la grande base constitue l'entrée pour la ligne hyperfréquence et dont la petite base se raccorde à une métallisation de masse. Une bande conductrice, transversale peut être déposée sur la couche résistive, en contact avec la bande conductrice et reliant deux métallisations destinées à former avec un plan de masse deux condensateurs.The patent application FR 2,486,720 describes a device for terminating a microwave transmission line, comprising a dielectric substrate with, on one side, a resistive layer constituting a termination charge. The resistive layer may have a trapezoid shape whose large base constitutes the input for the microwave line and whose small base is connected to a mass metallization. A conductive, transverse strip may be deposited on the resistive layer, in contact with the conductive strip and connecting two metallizations for forming with a ground plane two capacitors.

Le brevet US 6 326 862 décrit un système de terminaison électrique comportant un boîtier dans lequel est disposé un substrat diélectrique portant un élément de circuit de terminaison. Le boîtier comporte une première cavité relativement haute, au-dessus de la jonction du conducteur intérieur du câble coaxial sur le substrat diélectrique. Cette première cavité débouche dans une deuxième cavité de moindre hauteur. Cette double cavité vise à corriger les défauts d'impédance.The patent US 6,326,862 discloses an electrical termination system having a housing in which is disposed a dielectric substrate carrying a termination circuit element. The housing has a relatively high first cavity, above the junction of the inner conductor of the coaxial cable on the dielectric substrate. This first cavity opens into a second cavity of lower height. This double cavity aims to correct the impedance defects.

Le brevet US 4 267 531 décrit un dispositif comportant un film résistif pris en sandwich entre deux diélectriques, sur lesquels sont disposées des feuilles.The patent US 4,267,531 discloses a device comprising a resistive film sandwiched between two dielectrics, on which sheets are arranged.

Le brevet US 4 965 538 décrit un atténuateur avec une région résistive de forme rectangulaire sur laquelle se raccord deux électrodes.The patent US 4,965,538 discloses an attenuator with a resistive region of rectangular shape to which two electrodes are connected.

La présente invention vise notamment à proposer un nouveau dispositif hyperfréquence, notamment un dispositif formant charge résistive, de type « microstrip », permettant de réduire de manière substantielle les défauts d'impédance, et ce, pour une large plage de fréquences.The present invention aims in particular to provide a new microwave device, including a resistive charging device, type "microstrip", to substantially reduce impedance defects, and this for a wide frequency range.

L'invention a ainsi pour objet un dispositif hyperfréquence, notamment un dispositif formant charge résistive ou un atténuateur, destiné à la dissipation ou à l'atténuation de puissance, selon défini dans les revendications 1 ou 13.The invention thus relates to a microwave device, in particular a resistive load device or an attenuator, intended for power dissipation or attenuation, as defined in claims 1 or 13.

La première région peut présenter une dimension transversale à l'axe de la couche résistive, inférieure à celle de la seconde région.The first region may have a dimension transverse to the axis of the resistive layer, lower than that of the second region.

Grâce à l'invention, du fait que la première région est moins large que la seconde région, le défaut capacitif à l'entrée de la couche résistive est réduit.Thanks to the invention, since the first region is narrower than the second region, the capacitive fault at the input of the resistive layer is reduced.

De préférence, la ou chaque première région de la couche résistive présente une forme convergeant vers la bande conductrice, cette première région pouvant par exemple être sensiblement trapézoïdale, la ou les bandes conductrices se raccordant à la couche résistive par la petite base du trapèze.Preferably, the or each first region of the resistive layer has a shape converging towards the conductive strip, this first region may for example be substantially trapezoidal, the conductive strip or strips connecting to the resistive layer by the small base of the trapezoid.

Pour la réalisation d'une charge résistive, la couche résistive toute entière peut présenter une forme sensiblement trapézoïdale, auquel cas la zone de masse se raccorde à cette couche par la grande base du trapèze.For the production of a resistive load, the entire resistive layer may have a substantially trapezoidal shape, in which case the ground area is connected to this layer by the large base of the trapezium.

En variante, la seconde région est sensiblement rectangulaire et la zone de masse se raccorde à cette région par un côté du rectangle.In a variant, the second region is substantially rectangular and the mass zone is connected to this region by one side of the rectangle.

Pour la réalisation d'un atténuateur comportant deux bandes conductrices, la couche résistive comporte deux premières régions raccordées chacune à une bande conductrice et à une seconde région rectangulaire, centrale, raccordée à la zone de masse.For producing an attenuator comprising two conductive strips, the resistive layer comprises two first regions each connected to a conductive strip and to a second rectangular central region connected to the ground zone.

En variante ou en combinaison avec les formes précitées de la couche résistive, l'invention permet de réduire les défauts d'impédance en recouvrant la couche résistive, au moins partiellement, par un plan de masse relié à la zone de masse et isolé de la couche résistive par une couche isolante.As a variant or in combination with the abovementioned forms of the resistive layer, the invention makes it possible to reduce the impedance defects by covering the resistive layer, at least partially, by a ground plane connected to the mass zone and isolated from the ground. resistive layer by an insulating layer.

Grâce à l'invention, en combinant les formes précitées de la couche résistive et la présence du plan de masse au dessus de la couche résistive, on obtient une réduction des défauts de capacité et d'induction, donc une meilleure adaptation hyperfréquence, pour des fréquences allant environ jusqu'à 8 GHz.Thanks to the invention, by combining the aforementioned forms of the resistive layer and the presence of the ground plane above the resistive layer, a reduction of the capacitance and induction defects is obtained, thus a better microwave adaptation, for frequencies up to about 8 GHz.

De plus, le dispositif selon l'invention peut présenter un coût de revient relativement faible.In addition, the device according to the invention may have a relatively low cost.

De préférence, le plan de masse ne recouvre pas entièrement la région d'entrée, se situant en retrait de la jonction entre la ou une bande conductrice et la ou les couches résistives.Preferably, the ground plane does not completely cover the input region, being set back from the junction between the or a conductive strip and the resistive layer or layers.

Le plan de masse peut venir recouvrir entièrement la seconde région de la ou des couches résistives.The ground plane can completely cover the second region of the resistive layer or layers.

Avantageusement le plan de masse s'étend transversalement sur toute la largeur de la ou des couches résistives.Advantageously, the ground plane extends transversely over the entire width of the resistive layer or layers.

Dans le cas où la zone de masse est réalisée directement sur le substrat, en étant adjacente à la seconde région, le plan de masse précité vient avantageusement en contact électrique avec cette zone de masse, à l'arrière de la couche résistive.In the case where the mass zone is formed directly on the substrate, being adjacent to the second region, the above ground plane advantageously comes into electrical contact with the ground zone, at the rear of the resistive layer.

Avantageusement, le plan de masse précité se raccorde à des zones latérales de masse s'étendant sur des tranches du substrat, notamment celles qui sont parallèles à l'axe de la couche résistive.Advantageously, the abovementioned ground plane connects to lateral zones of mass extending on slices of the substrate, in particular those which are parallel to the axis of the resistive layer.

Ces zones latérales de masse peuvent être constituées par des métallisations réalisées sur ces tranches.These lateral zones of mass may consist of metallizations carried out on these slices.

La couche isolante peut être une couche de verre déposée par exemple par sérigraphie sur la couche résistive.The insulating layer may be a layer of glass deposited for example by screen printing on the resistive layer.

La zone de masse sur le substrat peut être reliée à une plage de masse sur l'autre face du substrat notamment par une ou plusieurs métallisations sur une tranche du substrat ou, en variante, par des perçages métallisés réalisés dans l'épaisseur du substrat.The mass zone on the substrate may be connected to a mass range on the other side of the substrate, in particular by one or more metallizations on a wafer of the substrate or, alternatively, by metallized bores made in the thickness of the substrate.

En variante, le dispositif comporte un insert comprenant une paroi conductrice venant s'appliquer sur la couche isolante et définissant le plan de masse.In a variant, the device comprises an insert comprising a conductive wall that is applied to the insulating layer and defines the ground plane.

Dans un exemple de mise en oeuvre de l'invention, l'insert comporte au moins un bras conducteur latéral relié au plan de masse et apte à venir s'appliquer sur une tranche du substrat et éventuellement, le cas échéant, sur l'une des pistes conductrices latérales précitées.In an exemplary implementation of the invention, the insert comprises at least one lateral conductive arm connected to the ground plane and adapted to be applied on a wafer of the substrate and optionally, if necessary, on one side. aforementioned lateral conductive tracks.

Lorsque le dispositif est une charge déportée, l'insert peut comporter au moins une patte élastiquement déformable et conductrice apte à venir s'appliquer sur une paroi du boîtier, assurant ainsi la liaison électrique entre le plan de masse du dispositif et la paroi du boîtier.When the device is a remote load, the insert may comprise at least one elastically deformable and conductive tab adapted to be applied on a wall of the housing, thereby providing the electrical connection between the ground plane of the device and the wall of the housing .

L'insert peut également être agencé pour retenir le substrat sur le fond du boîtier. Autrement dit, il n'est pas nécessaire de réaliser une liaison métallurgique, par exemple un brasage, du substrat sur le fond du boîtier, son maintien dans le boîtier étant de nature mécanique. Le substrat peut alors être dépourvu de métallisation sur sa face opposée à celle portant la couche résistive, le plan de masse étant relié à la masse du boîtier.The insert may also be arranged to retain the substrate on the bottom of the housing. In other words, it is not necessary to perform a metallurgical bond, for example brazing, the substrate on the bottom of the housing, its maintenance in the housing being of a mechanical nature. The substrate can then be devoid of metallization on its face opposite to that carrying the resistive layer, the ground plane being connected to the body of the housing.

Notamment dans le cas où le dispositif est directement fixé sur un équipement du système, l'insert peut par exemple comporter au moins une partie de fixation permettant sa fixation notamment par brasage sur un support.In particular in the case where the device is directly attached to a system equipment, the insert may for example comprise at least one fixing portion for fixing it, in particular by brazing on a support.

L'invention peut comporter au moins une patte élastiquement déformable et conductrice apte à venir s'appliquer sur une paroi d'un boîtier.The invention may comprise at least one elastically deformable and conductive tab adapted to be applied on a wall of a housing.

L'insert peut comporter au moins une partie de fixation permettant sa fixation, notamment par brasure, sur un support.The insert may comprise at least one fixing part for fixing it, in particular by brazing, to a support.

Avantageusement, la première région présente une dimension transversale à l'axe longitudinal de la couche résistive, inférieure à celle de la seconde région.Advantageously, the first region has a dimension transverse to the longitudinal axis of the resistive layer, lower than that of the second region.

Le dispositif peut comporter deux bandes conductrices et la couche résistive comporter deux premières régions trapézoïdales raccordées chacune à une bande conductrice et une seconde région rectangulaire centrale raccordée à la zone de masse.The device may comprise two conductive strips and the resistive layer comprise two first trapezoidal regions each connected to a conductive strip and a second central rectangular region connected to the ground area.

L'invention pourra être mieux comprise à la lecture de la description détaillée qui va suivre, d'exemples de mise en oeuvre non limitatifs, et à l'examen du dessin annexé, sur lequel :

  • la figure 1 représente, schématiquement et partiellement, en vue de dessus, un dispositif formant charge résistive,
  • les figures 2 et 3 représentent, schématiquement et partiellement, respectivement en perspective et en vue de dessus, une mise en oeuvre de dispositif formant charge résistive selon l'invention,
  • la figure 4 représente, schématiquement et partiellement, en vue éclatée, un dispositif formant charge résistive conforme à l'invention, logé dans un boîtier,
  • la figure 5 représente, schématiquement et partiellement, en perspective, un dispositif formant charge résistive conforme à une variante de mise en oeuvre de l'invention, et
  • la figure 6 représente, schématiquement et partiellement, en perspective, un mode de réalisation d'atténuateur selon l'invention.
The invention will be better understood on reading the detailed description which follows, non-limiting examples of implementation, and on examining the appended drawing, in which:
  • the figure 1 represents, schematically and partially, in plan view, a resistive load device,
  • the Figures 2 and 3 represent, schematically and partially, respectively in perspective and in view from above, an implementation of a resistive load device according to the invention,
  • the figure 4 represents schematically and partially, in exploded view, a resistive charging device according to the invention, housed in a housing,
  • the figure 5 represents, schematically and partially, in perspective, a resistive charging device according to an alternative embodiment of the invention, and
  • the figure 6 represents, schematically and partially, in perspective, an attenuator embodiment according to the invention.

On a représenté sur la figure 1 un dispositif 1 formant charge résistive hyperfréquence destiné à la dissipation de puissance, comportant une couche résistive 2 déposée sur une face 4 d'un substrat isolant 3, la couche résistive 2 étant reliée, d'une part, à une bande conductrice 5 et, d'autre part, à une zone de masse 6 également déposée sur la face 4 du substrat isolant 3.We have shown on the figure 1 a device 1 forming a microwave resistive load intended for power dissipation, comprising a resistive layer 2 deposited on a face 4 of an insulating substrate 3, the resistive layer 2 being connected, on the one hand, to a conductive strip 5 and, on the other hand, to a mass zone 6 also deposited on the face 4 of the insulating substrate 3.

Le dispositif 1 est destiné à être utilisé dans un système hyperfréquence.The device 1 is intended to be used in a microwave system.

Le substrat 3 peut être réalisé en céramique, notamment en alumine ou en nitrure d'aluminium (A1N).The substrate 3 may be made of ceramic, in particular alumina or aluminum nitride (A1N).

Le substrat 3 forme avec la bande conductrice 5 et une plage de masse 8 située sur une face 7 opposée à la face 4 une ligne hyperfréquence.The substrate 3 forms with the conductive strip 5 and a mass range 8 located on a face 7 opposite the face 4 a microwave line.

La plage de masse 8 peut être brassée sur un support, non représenté.The mass range 8 can be brewed on a support, not shown.

La zone de masse 6 peut être reliée à la plage de masse 8 par une ou plusieurs métallisations réalisées sur une tranche 3a du substrat 3 ou par des perçages métallisés réalisés dans l'épaisseur du substrat 3.The ground area 6 can be connected to the ground area 8 by one or more metallizations made on a wafer 3a of the substrate 3 or by metallized bores made in the thickness of the substrate 3.

La couche résistive 2 peut être déposée sur le substrat 3 par sérigraphie ou en couche mince par exemple.The resistive layer 2 may be deposited on the substrate 3 by screen printing or in a thin layer, for example.

Dans l'exemple considéré, la couche résistive 2 comporte une région d'entrée 2a présentant une forme sensiblement trapézoïdale isocèle, la bande conductrice 5 se raccordant à cette région 2a par la petite base 10 du trapèze.In the example considered, the resistive layer 2 comprises an input region 2a having a substantially isosceles trapezoidal shape, the conductive strip 5 being connected to this region 2a by the small base 10 of the trapezium.

La région 2a se prolonge, du côté opposé à la petite base 10, par une région 2b rectangulaire dont le grand côté coïncide avec la grande base du trapèze.The region 2a extends, on the opposite side to the small base 10, by a rectangular region 2b whose long side coincides with the large base of the trapezium.

La zone de masse 6 se raccorde à la couche résistive 2 le long d'un grand côté 11 du rectangle.The mass zone 6 is connected to the resistive layer 2 along a long side 11 of the rectangle.

La couche résistive 2 présente un axe longitudinal X qui est, dans l'exemple considéré, parallèle à la bande conductrice 5.The resistive layer 2 has a longitudinal axis X which is, in this example, parallel to the conductive strip 5.

Cette forme particulière de la couche résistive 2 permet notamment de réduire les défauts capacitifs à l'entrée de la couche résistive.This particular form of the resistive layer 2 notably makes it possible to reduce the capacitive defects at the input of the resistive layer.

Pour améliorer encore l'adaptation hyperfréquence du dispositif 1, il est possible, comme illustré sur les figures 2 et 3, de prolonger la zone de masse 4 par un plan de masse 12 venant recouvrir partiellement la couche résistive 2.To further improve the microwave adaptation of the device 1, it is possible, as illustrated in FIGS. Figures 2 and 3 to extend the mass zone 4 by a ground plane 12 partially covering the resistive layer 2.

A cet effet, la couche résistive 2 est entièrement recouverte d'une couche isolante 13, laquelle est constituée par exemple par une couche de verre déposée par sérigraphie.For this purpose, the resistive layer 2 is entirely covered with an insulating layer 13, which is constituted for example by a layer of glass deposited by screen printing.

Le plan de masse 12 présente une forme rectangulaire de longueur sensiblement égale à la largeur du substrat.The ground plane 12 has a rectangular shape of length substantially equal to the width of the substrate.

Le plan de masse 12 vient recouvrir la zone de masse 6 et se situe en retrait de la petite base 10 du trapèze.The ground plane 12 covers the ground area 6 and is set back from the small base 10 of the trapezium.

Autrement dit, le plan de masse 12 recouvre entièrement la région 2b de la couche résistive 2 et laisse dégagée la partie de jonction entre la bande conductrice 5 et la couche résistive 2.In other words, the ground plane 12 completely covers the region 2b of the resistive layer 2 and leaves clear the junction portion between the conductive strip 5 and the resistive layer 2.

Dans l'exemple considéré, le plan de masse 12 est réalisé à partir d'une pâte conductrice déposée sur la couche isolante 13.In the example considered, the ground plane 12 is made from a conductive paste deposited on the insulating layer 13.

Comme on peut le voir sur les figures 2 et 3, la zone de masse 6 peut se raccorder à deux pistes conductrices latérales 14, 15, parallèles à l'axe X.As can be seen on the Figures 2 and 3 , the ground area 6 can be connected to two lateral conductive tracks 14, 15, parallel to the axis X.

Le plan de masse 12 vient recouvrir ces pistes 14, 15, en étant en contact avec elles.The ground plane 12 comes to cover these tracks 14, 15, being in contact with them.

La présence de ces pistes 14, 15 reliées au plan de masse 12 permet d'améliorer encore l'adaptation hyperfréquence.The presence of these tracks 14, 15 connected to the ground plane 12 makes it possible to further improve the microwave adaptation.

Les tranches 3a du substrat 3 parallèles à l'axe X peuvent être métallisées et être reliées électriquement au plan de masse 12.The slices 3a of the substrate 3 parallel to the X axis may be metallized and be electrically connected to the ground plane 12.

On a représenté sur la figure 4 un dispositif 1' formant charge résistive déportée conforme à une variante de mise en oeuvre de l'invention.We have shown on the figure 4 a device 1 'forming a remote resistive load according to an alternative embodiment of the invention.

Le dispositif 1' est logé dans un boîtier 20, lequel peut être éloigné du système hyperfréquence pour être mis au contact d'un radiateur de refroidissement notamment.The device 1 'is housed in a housing 20, which may be remote from the microwave system to be brought into contact with a cooling radiator in particular.

Le dispositif 1' diffère du dispositif 1 précédemment décrit par le fait que le plan de masse n'est pas constitué d'une couche d'un matériau conducteur déposée sur le substrat, mais est défini par une paroi centrale 23 d'un insert métallique 22 venant s'appliquer sur le substrat 3.The device 1 'differs from the device 1 previously described in that the ground plane does not consist of a layer of a conductive material deposited on the substrate, but is defined by a central wall 23 of a metal insert 22 being applied to the substrate 3.

La bande conductrice 5 est destinée à être reliée au conducteur central d'un câble coaxial 21 monté, à une extrémité, sur le boîtier 20.The conductive strip 5 is intended to be connected to the central conductor of a coaxial cable 21 mounted at one end on the housing 20.

L'insert 22 comporte de part et d'autre de la paroi centrale 23 deux bras latéraux 24 destinés à venir s'appliquer sur deux bords parallèles du substrat 3 et sur les pistes conductrices 14, 15. Ces bras 24 comportent chacun une portion 24a verticale s'appliquant sur une tranche du substrat 3.The insert 22 comprises on either side of the central wall 23 two lateral arms 24 intended to be applied on two parallel edges of the substrate 3 and on the conductive tracks 14, 15. These arms 24 each comprise a portion 24a vertical application on a wafer of the substrate 3.

L'insert 22 comporte sur sa face supérieure une patte élastiquement déformable et conductrice 25 apte à venir s'appliquer sur un couvercle conducteur 26 du boîtier 20. Selon l'invention, il est possible de prévoir plusieurs pattes conductrices 25.The insert 22 has on its upper face an elastically deformable and conductive tab 25 adapted to be applied on a conductive cover 26 of the housing 20. According to the invention, it is possible to provide a plurality of conductive tabs 25.

Dans l'exemple considéré, la couche résistive 2 est obtenue par le dépôt d'une pâte conductrice sur le substrat 3.In the example considered, the resistive layer 2 is obtained by depositing a conductive paste on the substrate 3.

L'insert 22, dans l'exemple considéré, permet de maintenir le substrat 3 sur le fond du boîtier 20, ce maintien étant de nature mécanique.The insert 22, in the example considered, keeps the substrate 3 on the bottom of the housing 20, the maintenance being of a mechanical nature.

La ou les pattes 25 permettent en outre de réaliser un contact électrique entre la zone de masse 6 et le boîtier 20.The lug or tabs 25 also make it possible to make an electrical contact between the ground zone 6 and the housing 20.

Dans le cas où le dispositif formant charge résistive est fixé directement sur un équipement du système, sans être logé dans un boîtier spécifique, l'insert 22' peut être dépourvu de patte élastiquement déformable 25 et ses bras latéraux 24' comporter des extensions 31 permettant de braser l'insert 22 sur un support 30.In the case where the resistive load device is attached directly to a system equipment, without being housed in a specific housing, the insert 22 'may be free of an elastically deformable tab 25 and its lateral arms 24' may have extensions 31 allowing brazing the insert 22 on a support 30.

Ce support 30 peut être constitué par un circuit ou une bride métallique fixée sur l'équipement du système, par exemple.This support 30 may be constituted by a circuit or a metal flange fixed on the equipment of the system, for example.

Bien entendu, l'invention n'est pas limitée aux exemples de mise en oeuvre qui viennent d'être décrits.Of course, the invention is not limited to the implementation examples which have just been described.

On peut encore prévoir, directement sur la face de l'insert venant en regard de la couche résistive 2, une couche isolante qui remplace une couche isolante 13 déposée sur le substrat.It is also possible to provide, directly on the face of the insert coming opposite the resistive layer 2, an insulating layer which replaces an insulating layer 13 deposited on the substrate.

Le dispositif hyperfréquence selon l'invention peut encore être agencé en atténuateur. Un mode de réalisation d'un dispositif formant atténuateur est illustré à la figure 6.The microwave device according to the invention can be further arranged as an attenuator. An embodiment of an attenuator device is illustrated in FIG. figure 6 .

La couche résistive 2' présente une configuration symétrique comportant deux régions trapézoïdales 2'a raccordées par leurs grandes bases aux grands côtés d'une région centrale rectangulaire 2'b dont les petits côtés sont reliés à la masse. Les régions trapézoïdales 2'b sont raccordées par leurs petites bases à des bandes conductrices 5.The resistive layer 2 'has a symmetrical configuration comprising two trapezoidal regions 2'a connected by their large bases to the long sides of a rectangular central region 2'b whose short sides are connected to the ground. The trapezoidal regions 2'b are connected by their small bases to conductive strips 5.

Comme pour les modes de réalisation précédents, il est prévu un plan de masse, non représenté, ne recouvrant pas entièrement la couche résistive 2'.As for the previous embodiments, there is provided a ground plane, not shown, not entirely covering the resistive layer 2 '.

Claims (16)

  1. A microwave device (1; 1') for at least one of dissipating and attenuating power, the device comprising:
    - an insulating substrate (3);
    - at least one conductive strip (5) of a microwave transmission line on a face (4) of the substrate (3);
    - at least one ground zone (6); and
    - at least one resistive layer (2; 2') placed on said face (4) of the substrate, the resistive layer (2; 2') having at least a first region (2a; 2'a) to which said conductive strip (5) is connected and a second region (2b; 2'b) connected to the ground zone (6), the resistive layer (2) presenting a longitudinal axis (X);
    in which device:
    - the resistive layer (2; 2') is covered at least in part by a ground plane (12) connected to the ground zone (6) and insulated from the resistive layer (2; 2') by an insulating layer (13);
    - the ground plane (12) comprises a conductive material silkscreen printed on the insulating layer (13),
    characterized in that the substrate (3) carries two lateral conductive tracks (14, 15), on either side of the resistive layer (2; 2'), and connected to said ground zone (6), the ground plane (12) covering said tracks (14, 15).
  2. A device according to claim 1, characterized by the fact that the first region (2a; 2'a) of the resistive layer (2; 2') presents a shape that converges towards the conductive strip (5).
  3. A device according to claim 2, characterized by the fact that the or each first region (2a; 2'a) presents a substantially trapezoidal shape, the conductive strip(s) (5) being connected to the resistive layer via the minor base (10) of the trapezoid.
  4. A device according to claim 3, forming a resistive load, characterized by the fact that the entire resistive layer (2) is substantially trapezoidal in shape, the ground zone (6) being connected to said resistive layer (2) via the major base of the trapezoid.
  5. A device according to anyone claims 1 to 3, forming a resistive load, characterized by the fact that the second region (2b) is substantially rectangular, and the ground zone (6) connects to said region via one side of the rectangle.
  6. A device according to any one claims 1 to 3, forming an attenuator, characterized by the fact that the device comprises two conductive strips (5) and wherein the resistive layer (2') comprises two trapezoidal first regions (2'a) each connected to a conductive strip (5), and a central rectangular second region (2'b) connected to the ground zone (6).
  7. A device according to any one preceding claims, characterized by the fact that the ground plane (12) does not completely cover the first region (2a;, 2'a), being set back from the junction between the conductive strip (5) and the resistive layer (2; 2').
  8. A device according to any one preceding claims, characterized by the fact that the ground plane (12) covers the second region (2b; 2'b) completely.
  9. A device according to any one preceding claims, characterized by the fact that the ground plane (12) extends transversely over the entire width of the resistive layer (2; 2').
  10. A device according to any one preceding claims, the ground zone (6) is formed on the substrate, being adjacent to the second region (2b; 2'b), characterized by the fact that the ground plane (12) comes into electrical contact with said ground zone behind the resistive layer.
  11. A device according to any one preceding claims, characterized by the fact that the ground plane (12) is connected to lateral ground zones extending along the edge faces of the substrate (3).
  12. A device according to any one preceding claims, characterized by the fact that the first region (2a; 2'a) presents a dimension extending transversely to the longitudinal axis (X) of the resistive layer, that is less than that of the second region (2b; 2'b).
  13. A microwave device (1; 1') for at least one of dissipating and attenuating power, notably a device forming a resistive load or an attenuator, comprising:
    - an insulating substrate (3),
    - at least one conductive strip (5) of a microwave transmission line on one face (4) of the substrate (3),
    - at least one ground zone (6),
    - at least one resistive layer (2; 2') deposited on the above-specified face (4) of the substrate, the resistive layer (2; 2') including at least a first region (2a; 2'a) to which said conductive strip (5) is connected, and a second region (2b; 2'b) connected to the ground zone (6), the resistive layer (2) presenting a longitudinal axis (X),
    in which device:
    - the resistive layer (2; 2') is covered at least in part by a ground plane (12) connected to the ground zone (6) and insulated from the resistive layer (2; 2') by an insulating layer (13);
    characterized bu the fact that the device includes an insert (22) comprising a conductive wall (23) pressed against the insulating layer (13) and defining the ground plane (12), and two lateral arms (24) on either side of the central wall (23), and by the fact that the insert (22) is arranged to hold the substrate (3) on the bottom of a package (20) in which the device is housed
    and by the fact that, the substrate (3) carries two lateral conductive tracks (14, 15) connected to said ground zone (6), the ground plane (12) covering said tracks (14, 15), the two lateral arms of the insert being intended for pressing against the conductive tracks (14, 15).
  14. A device according to claim 13, characterized by the fact that the insert includes at least one conductive and elastically deformable tab (25) suitable for pressing against a wall of a package (20).
  15. A device according to claim 13 or claim 14, characterized by the fact that the insert includes at least one fastener portion (31) enabling it to be fastened, notably soldered, on a support (30).
  16. A device according to any one claims 13 to 15, characterized by the fact that the first region (2a; 2'a) presents a dimension extending transversely to the longitudinal axis (X) of the resistive layer that is less than that of the second region (2b; 2'b).
EP04290686.7A 2003-03-19 2004-03-12 Microwave element used for dissipation or attenuation of energy Expired - Lifetime EP1460710B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0303339A FR2852738A1 (en) 2003-03-19 2003-03-19 MICROWAVE DEVICE FOR POWER DISSIPATION OR MITIGATION.
FR0303339 2003-03-19

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EP1460710A1 EP1460710A1 (en) 2004-09-22
EP1460710B1 true EP1460710B1 (en) 2014-05-21

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FR (1) FR2852738A1 (en)

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US20040227232A1 (en) 2004-11-18
EP1460710A1 (en) 2004-09-22
US7161244B2 (en) 2007-01-09
FR2852738A1 (en) 2004-09-24

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