EP1456872A1 - Method for depositing iii-v semiconductor layers on a non iii-v substrate - Google Patents
Method for depositing iii-v semiconductor layers on a non iii-v substrateInfo
- Publication number
- EP1456872A1 EP1456872A1 EP02792976A EP02792976A EP1456872A1 EP 1456872 A1 EP1456872 A1 EP 1456872A1 EP 02792976 A EP02792976 A EP 02792976A EP 02792976 A EP02792976 A EP 02792976A EP 1456872 A1 EP1456872 A1 EP 1456872A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- iii
- substrate
- masking
- particular according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Abstract
Description
Claims
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10163715 | 2001-12-21 | ||
DE10163715 | 2001-12-21 | ||
DE10206751 | 2002-02-19 | ||
DE10206751A DE10206751A1 (en) | 2001-12-21 | 2002-02-19 | Method for depositing III-V semiconductor layers on a non-III-V substrate |
PCT/EP2002/014096 WO2003054939A1 (en) | 2001-12-21 | 2002-12-11 | Method for depositing iii-v semiconductor layers on a non iii-v substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1456872A1 true EP1456872A1 (en) | 2004-09-15 |
Family
ID=26010858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02792976A Withdrawn EP1456872A1 (en) | 2001-12-21 | 2002-12-11 | Method for depositing iii-v semiconductor layers on a non iii-v substrate |
Country Status (6)
Country | Link |
---|---|
US (1) | US7128786B2 (en) |
EP (1) | EP1456872A1 (en) |
JP (1) | JP2005513799A (en) |
AU (1) | AU2002358678A1 (en) |
TW (1) | TW561526B (en) |
WO (1) | WO2003054939A1 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7172745B1 (en) * | 2003-07-25 | 2007-02-06 | Chien-Min Sung | Synthesis of diamond particles in a metal matrix |
DE10335080A1 (en) | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip |
DE10335081A1 (en) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip |
EP1583139A1 (en) | 2004-04-02 | 2005-10-05 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Method for depositing a group III-nitride material on a silicon substrate and device therefor |
US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
WO2007122669A1 (en) * | 2006-03-29 | 2007-11-01 | Fujitsu Limited | COMPOUND SEMICONDUCTOR WAFER HAVING POLYCRYSTALLINE SiC SUBSTRATE, COMPOUND SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THESE |
TWI334164B (en) * | 2006-06-07 | 2010-12-01 | Ind Tech Res Inst | Method of manufacturing nitride semiconductor substrate and composite material substrate |
TWI325641B (en) | 2006-09-04 | 2010-06-01 | Huga Optotech Inc | Light emitting device and methods for forming the same |
US20080083431A1 (en) * | 2006-10-06 | 2008-04-10 | Mark Schwarze | Device and method for clearing debris from the front of a hood in a mechanized sweepers |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
WO2008115387A2 (en) * | 2007-03-15 | 2008-09-25 | University Hospitals Of Cleveland | Screening, diagnosing, treating and prognosis of pathophysiologic states by rna regulation |
US8962453B2 (en) * | 2007-07-10 | 2015-02-24 | Nxp B.V. | Single crystal growth on a mis-matched substrate |
KR101355593B1 (en) * | 2007-07-26 | 2014-01-24 | 아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티 | Methods for producing improved epitaxial materials |
US8778079B2 (en) | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US8377796B2 (en) | 2008-08-11 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-V compound semiconductor epitaxy from a non-III-V substrate |
US8803189B2 (en) * | 2008-08-11 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-V compound semiconductor epitaxy using lateral overgrowth |
EP2412006A1 (en) * | 2009-02-05 | 2012-02-01 | S.O.I.Tec Silicon on Insulator Technologies | Epitaxial methods and structures for forming semiconductor materials |
US8178427B2 (en) * | 2009-03-31 | 2012-05-15 | Commissariat A. L'energie Atomique | Epitaxial methods for reducing surface dislocation density in semiconductor materials |
DE102009050234A1 (en) † | 2009-10-21 | 2011-05-05 | Von Ardenne Anlagentechnik Gmbh | Process for coating a substrate with a TCO layer and thin-film solar cell |
KR102192130B1 (en) * | 2012-03-21 | 2020-12-17 | 프라이베르게르 컴파운드 마터리얼스 게엠베하 | Iii-n single crystals |
DE102012107001A1 (en) * | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
KR101464854B1 (en) * | 2013-01-14 | 2014-11-25 | 주식회사 엘지실트론 | Semiconductor substrate |
EP3274692B1 (en) | 2015-03-24 | 2022-08-10 | Illumina, Inc. | Methods for imaging samples for biological or chemical analysis |
US9520394B1 (en) | 2015-05-21 | 2016-12-13 | International Business Machines Corporation | Contact structure and extension formation for III-V nFET |
KR102369676B1 (en) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | Apparatus and method for manufacturing a display apparatus |
EP3696300A1 (en) * | 2019-02-18 | 2020-08-19 | Aixatech GmbH | Method for the production of a body made of composite material, especially for use in the manufacture of electronic or optoelectronic components |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000057460A1 (en) * | 1999-03-23 | 2000-09-28 | Mitsubishi Cable Industries, Ltd. | METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
EP1111663A2 (en) * | 1999-12-20 | 2001-06-27 | Nitride Semiconductors Co., Ltd. | GaN-based compound semiconductor device and method of producing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3321369B2 (en) * | 1996-09-27 | 2002-09-03 | 日本碍子株式会社 | Surface acoustic wave device, its substrate, and its manufacturing method |
ATE550461T1 (en) * | 1997-04-11 | 2012-04-15 | Nichia Corp | GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR |
FR2769924B1 (en) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | PROCESS FOR MAKING AN EPITAXIAL LAYER OF GALLIUM NITRIDE, EPITAXIAL LAYER OF GALLIUM NITRIDE AND OPTOELECTRONIC COMPONENT PROVIDED WITH SUCH A LAYER |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6160833A (en) * | 1998-05-06 | 2000-12-12 | Xerox Corporation | Blue vertical cavity surface emitting laser |
JP4145437B2 (en) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate |
US6841808B2 (en) * | 2000-06-23 | 2005-01-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for producing the same |
-
2002
- 2002-10-24 TW TW091124715A patent/TW561526B/en not_active IP Right Cessation
- 2002-12-11 JP JP2003555567A patent/JP2005513799A/en active Pending
- 2002-12-11 AU AU2002358678A patent/AU2002358678A1/en not_active Abandoned
- 2002-12-11 WO PCT/EP2002/014096 patent/WO2003054939A1/en active Application Filing
- 2002-12-11 EP EP02792976A patent/EP1456872A1/en not_active Withdrawn
-
2004
- 2004-06-21 US US10/872,914 patent/US7128786B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000057460A1 (en) * | 1999-03-23 | 2000-09-28 | Mitsubishi Cable Industries, Ltd. | METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
EP1178523A1 (en) * | 1999-03-23 | 2002-02-06 | Mitsubishi Cable Industries, Ltd. | METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
EP1111663A2 (en) * | 1999-12-20 | 2001-06-27 | Nitride Semiconductors Co., Ltd. | GaN-based compound semiconductor device and method of producing the same |
Non-Patent Citations (2)
Title |
---|
SAKAI S. ET AL: "A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE", JOURNAL OF CRYSTAL GROWTH, vol. 221, 1 December 2000 (2000-12-01), pages 334 - 337, XP004226879 * |
See also references of WO03054939A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20050022725A1 (en) | 2005-02-03 |
AU2002358678A1 (en) | 2003-07-09 |
JP2005513799A (en) | 2005-05-12 |
WO2003054939A1 (en) | 2003-07-03 |
TW561526B (en) | 2003-11-11 |
US7128786B2 (en) | 2006-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20040505 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR |
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AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: DADGAR, ARMIN Inventor name: KROST, ALOIS Inventor name: JUERGENSEN, HOLGER |
|
17Q | First examination report despatched |
Effective date: 20080416 |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: AIXTRON AG |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20091020 |