EP1444720A2 - Procede et dispositif pour secher des objets plats, notamment des tranches de gallium ou de silicium ou bien des substrats analogues - Google Patents

Procede et dispositif pour secher des objets plats, notamment des tranches de gallium ou de silicium ou bien des substrats analogues

Info

Publication number
EP1444720A2
EP1444720A2 EP02783015A EP02783015A EP1444720A2 EP 1444720 A2 EP1444720 A2 EP 1444720A2 EP 02783015 A EP02783015 A EP 02783015A EP 02783015 A EP02783015 A EP 02783015A EP 1444720 A2 EP1444720 A2 EP 1444720A2
Authority
EP
European Patent Office
Prior art keywords
bath
treatment liquid
tank
container
separation medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02783015A
Other languages
German (de)
English (en)
Inventor
Werner Rietmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP1444720A2 publication Critical patent/EP1444720A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Definitions

  • the invention relates to a method for drying flat objects such as plate-shaped information carriers or their semi-finished products, in particular disks made of gallium or silicon or the like. Substrates according to the preamble of patent claim 1.
  • the invention also relates to a device which is particularly suitable for carrying it out Process is suitable.
  • Afer drying is an essential process in the wet chemical treatment of silicon wafers in the semiconductor industry.
  • Rmser dryers were built as centrifuges, whereby particles were generated by the rotation at the centrifuge bearings and also by the impression of the silicon disks in carrier grooves on the contact surfaces of the silicon disks.
  • panes or afer are used for cleaning and drying in a carrier, with this carrier being automatically removed from the carrier in a bath, after which the panes are in the bath in the position specified by the carrier be kept during the working process; the carrier releases the panes by sinking to the deepest point in the bath, and the panes are received by the carrier elements which penetrate in the sinking direction and protrude from the bottom of the container against the sinking direction.
  • a generic device for improved processing of silicon wafers is disclosed in DE 40 40 132 AI by the applicant.
  • the discs are temporarily fixed by a hold-down device and sprayed in rotation during the rotation and then by rotation under the action centrifugal force dried.
  • the drive shaft for the support bracket is supported on one side outside the process chamber, with an annular space with a non-abrasive labyrinth seal lying between its bearing and the drum-like process chamber, which is connected to the interior of the process chamber via a tolerated annular gap and from the connections for evacuation , Cross sprinkling and drainage to avoid any penetration
  • IPA isopropanol vapor
  • the carrier is immersed or lowered into a bath in which there is a high-purity treatment liquid as a separation medium and specifically lighter water; A cross flow is generated on the bath surface with the separating medium, which forces the possible residual moisture from the geometries of the substrates or panes from the bath surface into an overflow.
  • This displaced medium is drained into a tank in which the water film is separated from the medium and is fed to the neutralization after a calming phase.
  • the invention provides for the separating medium to be cooled below room temperature and to keep the temperature of the substrate above the ambient temperature, in particular about 5 ° C. above room temperature , This enables a specific weight difference of almost 1 - in particular 0.5 - to be achieved.
  • cooling only makes sense to the extent that the temperature of the wafer surface is not less than the dew point temperature of the ambient air. It was also found that the wafer should ideally be 5 ° C warmer than the environment to prevent condensation.
  • the bath should advantageously be subjected to ultrasound in order to prevent the formation of bubbles on the substrates or the disks or to be able to remove small water drops.
  • the treatment liquid lw should preferably be composed of volatile halogenated organic constituents, especially selected from the group of partially fluorinated organic liquids, which in particular contains partially fluorinated ethers - also: hydrofluoroethers -, partially fluorinated alcohols and / or partially fluorinated hydrocarbons.
  • the treatment fluid may consist of isomers of methoxynonafluorobutyl ether or contain at least one alcohol, hydrocarbon or ketone - or an interface activator.
  • the separation medium is recirculated using a pump. Additional filtration of the separation medium at the pool inlet is also provided. The medium cursed in the process tank is replaced by an additional dosing pump from a reserve canister.
  • the device or system primarily intended for carrying out this method is characterized in that the bath contains a high-purity separation medium as treatment liquid and is connected both to a tank for separating the medium from a water film and is connected to a refrigerant supply.
  • a container for the bath arranged in the process chamber is connected to the tank by means of a supply line, as are spray nozzles arranged above the container via further supply lines. That container for the bath is intended to form a collection space for discharge from the bath with the process chamber, the collection space being connected to the tank. It has proven to be advantageous to assign at least one ultrasound generator to the pool or container, preferably to attach it to the pool or container floor in order to enable the above-mentioned US sound system.
  • a cover element which is assigned to the basin or container or the process chamber and is preferably in the form of a closure cover and which is connected to a cold generator, in particular a cryostat, the temperature adjustment described above can be carried out.
  • That cold generator is, however, also connected to the tank, in particular connected by lines to at least one pipe arranged in the tank, which preferably lies - bent in a serpentine shape - on the tank bottom.
  • 1, 2 an oblique view of a support for silicon wafers
  • FIG. 3 shows a section of a flow diagram for a method according to the invention with a device for drying the panes which receives the carrier;
  • Fig. 4 the entire flow diagram with a further embodiment of the drying device
  • FIG. 5 shows a partially sectioned side view of a drying device for panes with a tank ready for a base under a process chamber
  • FIG. 7 is a top view of an additional element assigned to FIG. 6;
  • Fig. 8, 9 cross sections through Fig. 5 along the lines VIII-VIII and IX-IX;
  • FIG. 10 is an end view of FIG. 5 according to its arrow X;
  • FIG. 12 shows an enlarged detail from FIG. 5;
  • Fig. 13 is an enlarged view of parts of Fig. 8;
  • Fig. 14 is an enlarged side view of the tank of Fig. 5;
  • FIG. 14 an end view of FIG. 14;
  • FIG. 16 is a top view of the tank of FIG. 14
  • This carrier 12 for wafers 10 measuring here 200 mm has a height a of approximately 220 mm and is provided on the inner surfaces of its side walls 14 of length c of here 205 mm with receiving grooves 18 for the disks 10, the respective circumference 11 of which to that ridge surface and down hm between two baseboards 16 of the side walls 14 is free.
  • the external distance b x from the ridge strips 17 formed on the upper edges of the side walls 14 and cantilevering therefrom laterally measures approximately 235 mm.
  • the carrier 12 is lowered into a bath 20 which contains a high-purity treatment liquid as a separation medium for removing water adhering to the panes 10; this treatment fluid is specifically heavier than water.
  • the bath 20 is located in a basin or container 22 of the height h of a process chamber 30; 3, two parallel container walls 24 protrude from the base plate 32 thereof and, in addition to these at a distance e, two chamber walls 36 which project beyond the latter and which each delimit a side chamber 33 of the interior 32 with the container walls 24.
  • the right-hand chamber wall 36 in FIG. 3 is an additional parallel one at a distance ei
  • the outer wall 38 is assigned the same height hi, which likewise protrudes from the base plate 32 and delimits a separate lifting chamber 40 with an outlet device 39 located at the bottom.
  • Flow pipes 42 run on the base plate 32, the meaning of which is described below.
  • a plurality of ultrasound generators or ultrasound oscillators 44 project downward from the base plate 32 outside the interior 34; whose ultrasound transmitted to the basin 22 is intended to prevent the formation of water bubbles on the panes 10.
  • a correspondingly inclined outer wall e a cross-sectionally triangular collar 46 of a closure cover 48, which is equipped with an outer insulating layer 47, is assigned to the inwardly inclined upper edges 36 a of the chamber walls 36.
  • a flow bar 52 is assigned to the row of spray nozzles 50 on the left in FIG ), partially fluorinated alcohols and partially fluorinated hydrogens - - over the bath surface 21 or the bath level. In this way, a cross flow is generated on the bath surface 21 with the separation medium Q, which forces the residual moisture from the bath surface 21 into the side chambers 36 serving as an overflow trough.
  • the basin or the container 22 a of the height h is pot-shaped; an outwardly inclined container wall 24 a is formed on an approximately square pool floor 23 and is surrounded by a flow jacket 54 - containing flow pipes 53 according to FIG. 12.
  • Ultrasound transducers 44 are also assigned to the pelvic floor 23, which are surrounded here by a sleeve tube 56; the latter protrudes from a base plate 57 assigned to the pelvic floor 23 and is supported by means of a radial base ring 58 against the parallel side walls 62 of a housing 60 which is spanned upwards by a cover plate 64.
  • the side walls 62, with the base ring 58, the sleeve tube 56 and the basin or container 22 a delimit a side space 61 a of the interior space 61 surrounding the latter. This is spanned by the cooling cover 48 a - seated in the insulating cover plate 64. which also surrounds an outer insulating layer 47.
  • spray nozzles 51 are assigned to the edge region of the container 22 a , the spray jet directed onto the bath level 21 unwinds from this treatment liquid or separation medium Q.
  • the latter / s collects in the deepest of the side space 61 a , delimited by the base ring 58, the sleeve tube 56 and the side wall 62; because by the spray jet of the spray nozzles 51 - as in FIG. 3 by means of a flow bar 52 discussed above - a cross flow is generated on the bath surface 21 with the separating medium Q, which cross-flows the residual moisture from the bath surface 21 into the side spaces 61 a serving as overflow chamber urges.
  • the displaced treatment liquid Q is discharged through a line 68 , which is connected to an outlet 66 of the base ring 58 for the side space 61 a in FIG. 4, to a tank 70, in which a tank bottom 71, long wall 72, rare wall 73 is used and 73 a limited collection space 76 a water film A is separated from the treatment liquid Q and, after a calming phase in a lateral water chamber 80, is fed through a discharge 81 to the neutralization.
  • the tank 70 contains a weir wall 74 dividing its inner or collecting space 76 with a downwardly inclined upper edge 74 a , via which that water film A is discharged. This is also assigned a line 82 for H 2 0-DI so that the tank 70 can be spooled if necessary.
  • a transverse wall 84 which ends at a distance from the ridge plate 74, projects from the tank bottom 71 with flank walls 85 provided on both sides at a distance; the latter are of the - directed First plate 78 downwards and end at a distance from the tank bottom 71, thereby serving as a separator labyrinthine Stromungsweg between that collecting chamber 76 of the tank 70 and a - - 79 equipped with 'an external sensor of the in Fig. 3, 4 right outer wall 73 a limited - prechamber 86 is formed.
  • a bottom tube 88 of the tank 70 which is designed in a serpentine manner and is arranged next to an outlet 89, arrives from a cryostat 90 through a line 91 a refrigerant; a branch line 92 continues to the coolable cover 48, 48 a for the process chamber 30 or the housing 60.
  • the opposite return lines are designated 91 a and 92 a .
  • the cryostat 90 is a device intended for the automatic setting of low temperatures with the aid of gas or a cold mixture; In order to obtain a greater specific weight difference between the water A and the treatment liquid Q - and thus to increase the effect of the wiping off - it is provided that the treatment liquid or the separation medium is kept at room temperature. rature to cool. This enables a specific weight difference of almost 1 to be achieved.
  • the treatment liquid Q is recirculated via a pump 94 through a feed line 95 or in F g. 3 returned to the flow or bottom pipes 42 in the bath 20 and in FIG. 4 directly at 95 a to the bath 20;
  • the line 95 contains, for additional filtration at 96, a 12 "filter 0.1 ⁇ m and in FIG. 3 receives a branch line 98 at a node 97, which - with the interposition of a pipe blocking element 99 - leads to a drain container 100.
  • the line 98 is connected to the Ablassbehal- ters 100 directly to the pelvis or to the container 22 a.
  • a further branch conduit 102 connects the conduit 95 with the spray nozzles 51 or the Stromungsological 52.
  • a further branch line 103 is present, which is connected at the other end to the high-lying spray nozzles 50 shown there above the flow bar 52.
  • a further line 104 ends in the prechamber 86 of the tank 70, thanks to which the separation medium Q which is cursed in the bath 20 can be replaced by a reserve canister 106 via an additional metering pump 105.
  • FIG. 5 ff shows a housing 60 with rare walls 62 of length n of 1200 mm and height k of 1000 mm; the housing width I measures 400 mm here.
  • the process basin can be seen at 22 a with disks 10 lying horizontally in a support 12; the base plate 32 runs at a distance q from a housing base 63 on which the tank 70 is mounted.
  • the side walls protrude 62 and are jointly Gehausedeckelplatte 64 in which a multi-layered cooling or cap 48b having an inclined panel surface 49 as well as supply and return flow lines 92, 92 are mounted for Deckelkuhlung a.
  • the base plate 32 is connected to the cover plate 64 of the housing 60 by transverse walls 37 and an outer wall 38 held.
  • FIG. 7 shows a sliding cover 108 for covering the interior 61.
  • transverse walls 37 including the outer wall 38, which both delimit the described side spaces 61 a and the lifting chamber 40.
  • FIG. 12 shows a lifting column 120 running in the lifting chamber 40 parallel to the vertical axis M of the basin 22, 22 a with radially laterally projecting support arms 122 each containing a horizontal angle piece; on their horizontal surfaces 123 buffer or the like.
  • Locking elements 124 are provided, on which the carrier 12 is mounted, which can be held in this way and lowered from a ridge position 12 f and raised back into it.
  • FIG. 13 shows that the carrier 12 is gripped by angle arms 122 a of the lifting column 120 which have a cross-sectional roof-like construction and which undercut the ridge strips 17 of the carrier 12 with supporting profiles 125 of cross bars 126 which are inclined outward to the vertical axis M.
  • Process basin 22 a the H 2 0-Dl line 82 and laterally the suction line 95 to the pump 94 and the container connection 104 are provided. 128 is also a full level line.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

L'invention concerne un procédé pour sécher des objets plats, tels que des supports d'informations en forme de plaquettes ou leurs demi-produits, et notamment des tranches de gallium ou de silicium ou des substrats analogues, dans une chambre de traitement (30, 61) verrouillable, dans laquelle est logé un support (12) recevant le(s) substrat(s) (10). Selon l'invention, les substrats (10) sont plongés dans un bain (20) et déplacés dans la zone de pulvérisation de buses (50, 51, 52). L'invention est caractérisée en ce que la/les tranche(s) (10) ou analogues sont plongés dans le bain (20) composé d'un liquide de traitement de grande pureté en tant que milieu de séparation (Q) et d'eau légère spécifique, un courant transversal étant créé au moyen du milieu de séparation à la surface (21) du bain, de laquelle est extraite l'humidité résiduelle. En outre, le liquide de traitement ou le milieu de séparation (Q) est refroidi à l'ambiante, la température de la tranche (10) ou analogue est maintenue à un niveau supérieur à la température environnante, notamment environ 5 DEG C au-dessus de la température ambiante.
EP02783015A 2001-10-31 2002-10-26 Procede et dispositif pour secher des objets plats, notamment des tranches de gallium ou de silicium ou bien des substrats analogues Withdrawn EP1444720A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10153225A DE10153225A1 (de) 2001-10-31 2001-10-31 Verfahren und Vorrichtung zum Trocknen von flächigen Gegenständen, insbesondere von Scheiben aus Gallium oder Silizium od.dgl. Substraten
DE10153225 2001-10-31
PCT/EP2002/011986 WO2003038866A2 (fr) 2001-10-31 2002-10-26 Procede et dispositif pour secher des objets plats, notamment des tranches de gallium ou de silicium ou bien des substrats analogues

Publications (1)

Publication Number Publication Date
EP1444720A2 true EP1444720A2 (fr) 2004-08-11

Family

ID=7704024

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02783015A Withdrawn EP1444720A2 (fr) 2001-10-31 2002-10-26 Procede et dispositif pour secher des objets plats, notamment des tranches de gallium ou de silicium ou bien des substrats analogues

Country Status (5)

Country Link
US (1) US20050022418A1 (fr)
EP (1) EP1444720A2 (fr)
AU (1) AU2002346886A1 (fr)
DE (1) DE10153225A1 (fr)
WO (1) WO2003038866A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US8257781B1 (en) * 2002-06-28 2012-09-04 Novellus Systems, Inc. Electroless plating-liquid system
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
WO2009098042A1 (fr) * 2008-02-06 2009-08-13 Meyer Burger Ag Dispositif de nettoyage de substrats
DE102017111618B4 (de) * 2017-05-29 2021-03-11 CURO GmbH Vorrichtung, System und Verfahren zur Trocknung einer Halbleiterscheibe

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US5156173A (en) * 1991-05-14 1992-10-20 Envirosolv High-efficiency, low-emissions cleaning method and apparatus
US5209028A (en) * 1992-04-15 1993-05-11 Air Products And Chemicals, Inc. Apparatus to clean solid surfaces using a cryogenic aerosol
JP2902222B2 (ja) * 1992-08-24 1999-06-07 東京エレクトロン株式会社 乾燥処理装置
JP3003016B2 (ja) * 1992-12-25 2000-01-24 東京エレクトロン株式会社 処理装置及び処理方法
US5544421A (en) * 1994-04-28 1996-08-13 Semitool, Inc. Semiconductor wafer processing system
US5958146A (en) * 1994-11-14 1999-09-28 Yieldup International Ultra-low particle semiconductor cleaner using heated fluids
JPH08211592A (ja) * 1995-02-07 1996-08-20 Nikon Corp 洗浄乾燥方法及び洗浄乾燥装置
US5964958A (en) * 1995-06-07 1999-10-12 Gary W. Ferrell Methods for drying and cleaning objects using aerosols
JPH10321585A (ja) * 1997-05-22 1998-12-04 Mitsubishi Electric Corp 乾燥装置および乾燥方法
US6354311B1 (en) * 1997-09-10 2002-03-12 Dainippon Screen Mfg. Co., Ltd. Substrate drying apparatus and substrate processing apparatus

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Title
See references of WO03038866A2 *

Also Published As

Publication number Publication date
AU2002346886A1 (en) 2003-05-12
WO2003038866A2 (fr) 2003-05-08
WO2003038866A3 (fr) 2004-01-08
US20050022418A1 (en) 2005-02-03
DE10153225A1 (de) 2003-05-08

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