Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/57—Protection from inspection, reverse engineering or tampering
  • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
  • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
  • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
  • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
  • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
  • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
  • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
  • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
  • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
  • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
  • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
  • G06K19/07309—Means for preventing undesired reading or writing from or onto record carriers
  • G06K19/07372—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
  • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
  • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
  • H01L23/20—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device gaseous at the normal operating temperature of the device
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/151—Die mounting substrate
  • H01L2924/1515—Shape
  • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/151—Die mounting substrate
  • H01L2924/15165—Monolayer substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/161—Cap
  • H01L2924/1615—Shape
  • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/161—Cap
  • H01L2924/1615—Shape
  • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Definitions

• Micro or nano-electronic component comprising an energy source and means for protecting the energy source
• the invention relates to a micro or nano-electronic component comprising an energy source produced in the form of thin films deposited on a substrate and means for protecting the energy source from the ambient atmosphere.
• Energy sources produced in the form of thin films deposited on a substrate include elements which react with the ambient environment, which can cause rapid deterioration of the energy source.
• the metallic lithium constituting the negative electrode of a micro-battery for example, oxidizes rapidly on contact with air, in particular in the presence of moisture. It is therefore essential to protect these energy sources from the ambient air with effective protection compatible with their use in microelectronics.
• US patent 5561004 describes a lithium battery, produced in the form of thin films, protected from the external atmosphere by at least one additional layer.
• the protective layers are deposited in the form of thin films directly on the lithium electrode of the battery so as to completely cover the exposed parts of this electrode.
• the materials which can be used to form these protective layers are metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-ceramic-metal combination. This type of coating provides chemical protection for the battery, but does not offer protection against mechanical break-ins.
• the invention aims to improve the security of a micro or nano-electronic component comprising an energy source formed on a substrate.
• this object is achieved by a component according to the appended claims and, more particularly, by the fact that the protection means comprise a sealed cavity in which the unprotected energy source is disposed, any penetration of the ambient atmosphere in the sealed cavity causing, by oxidation, the destruction of the energy source, thus rendering the component unusable.
• the cavity can be under vacuum or filled with an inert gas.
• the component comprises a pressure sensor disposed inside the cavity and detecting a pressure variation inside the cavity to render the component unusable when the pressure variation exceeds a predetermined threshold .
• the cavity is filled with a filling material consisting of silicone resin, thermosetting resin, polymer, epoxy, fusible glass or a metal chosen from indium, l , tin, or their alloys.
• the energy source can be constituted by a micro-battery or a micro-supercapacitor.
• FIG. 1 represents a first embodiment of a component according to the invention.
• FIG. 2 illustrates a second embodiment of a component according to the invention, before closing the cavity.
• FIG. 3 represents a particular method of closing the cavity of a component according to FIG. 2.
• FIG. 4 represents a micro-supercapacitor which can constitute the energy source.
• FIG. 5 illustrates a particular mode of decommissioning of the component.
• FIG. 1 represents a component in which an energy source is formed on an integrated circuit 1, itself formed on an insulating substrate 2.
• the energy source is intended to supply at least part of the elements of the integrated circuit 1
• the energy source and the integrated circuit are arranged side by side, on the substrate 2.
• the upper layer of the integrated circuit can act as its substrate.
• the topology (tormented surface) and / or the density of the upper layer of the integrated circuit may however be ill-suited to the production of additional layers having the desired electrical properties for the energy source.
• an intermediate insulating layer 3 is deposited on the integrated circuit and serves as a substrate supporting the various elements of the energy source.
• the intermediate insulating layer 3 deposited on the integrated circuit is thick enough to be flattened on its upper face, before the formation of the energy source, if necessary.
• the intermediate insulating layer can be made of mineral material (glass, Si0 2 , etc.) or of organic material (polymer, epoxy, etc.). Its leveling can be carried out by mechanical or mechanical-chemical means (by polishing, for example).
• a flat intermediate insulating layer can also be obtained directly if it is formed on the integrated circuit by the liquid route.
• the intermediate insulating layer 3, planar, preferably covers all of the integrated circuit 2 and of the substrate 1 (FIG. 1). The energy source is then produced on the intermediate insulating layer 3, which serves as its substrate.
• the substrate 2, made of any known suitable material, can in particular be a silicon, glass, plastic substrate, etc.
• the integrated circuit 1 is also produced in a known manner, by any type of technology used for the manufacture of semi -integrated conductors.
• the energy source can be constituted by a micro-battery, the thickness of which is between 7 ⁇ m and 30 ⁇ m (preferably of the order of 15 ⁇ m), for example by a lithium micro-battery formed by conventional techniques of chemical vapor deposition ("chemical vapor deposition ": CVD) or physical (“ physical vapor deposition ": PVD).
• CVD chemical vapor deposition
• PVD physical vapor deposition
• Such a micro-battery, in the form of thin films, is especially described in documents WO-A-9848467 and US-A-5561004.
• the operating principle of a micro-battery is based, in a known manner, on the insertion and disinsertion of an alkali metal ion or a proton in the positive electrode of the micro-battery, preferably an ion Li + lithium from a metallic lithium electrode.
• the micro-battery is formed by a stack of layers obtained by CVD or PVD deposition, respectively constituting two current collectors 4a and 4b, a positive electrode 5, an electrolyte 6 and a negative electrode 7.
• the electrical connections between the integrated circuit and the micro-battery are thus ensured by the metallic contact between the associated layers constituting the connection pads.
• the energy source constituted by the micro-battery can thus supply at least part of the elements of the integrated circuit 1 on which it is formed.
• the elements of the micro-battery can be made of various materials: -
• the metallic current collectors 4a and 4b can, for example, be based on platinum (Pt), chromium (Cr), gold (Au ) or titanium (Ti).
• the positive electrode 5 can consist of LiCo0 2 , LiNi0 2 ,
• the electrolyte 6, a good ionic conductor and electrical insulator, can consist of a glassy material based on boron oxide, lithium oxides or lithium salts.
• the negative electrode 7 can be constituted by metallic lithium deposited by thermal evaporation, by a metallic alloy based on lithium or by an insertion compound of the SiTON, SnN x , lnN x , Sn0 2 type , etc.
• the operating voltage of a micro-battery is between 2V and 4V, with a surface capacity of the order of 100 ⁇ Ah / cm 2 . Charging a micro-battery requires only a few minutes of charging.
• the metallic lithium constituting the negative electrode of micro-batteries in particular, oxidizes rapidly on contact with air, in particular in the presence of moisture.
• the component comprises a sealed cavity 9 in which are arranged the parts to be protected of the component, that is to say at least the energy source.
• the energy source and the integrated circuit 1 are entirely housed in the cavity 9.
• the integrated circuit and the energy source can be arranged separately or as an assembly in the cavity 9, but are preferably manufactured directly in the cavity, the bottom of which serves as a substrate.
• the cavity 9 is closed by a cover 10 which is attached to the elements to be protected, more particularly to the micro-battery.
• the cover is preferably made up of a silicon, metal, polymer, epoxy or glass plate, in which the cavity 9 is engraved.
• the cover 10 is fixed on the substrate 2 or on the intermediate plate 3 serving as a substrate for the micro-battery, so as to surround the parts to be protected of the component.
• the cavity 9 is thus delimited by the cover and by the intermediate plate 3. Connection pads other than the pads 8a and 8b can be taken outwards.
• the assembly can be carried out by any appropriate means making it possible to seal the cavity 9, in particular by gluing or by anodic sealing (“Anodic bonding below 180 ° C for packaging and assembling of MEMS using lithium”, Shuichi Shoji, DECE, Waseda University, 3-4-1, ohkubo, Shinjuku, Tokyo 169, 1997, IEEE). Bonding can be carried out using an adhesive, polymer or epoxy, or a photosensitive resin deposited beforehand on at least one of the surfaces to be assembled.
• bonding can be carried out by means of a fusible material, such as fusible glass deposited in the form of a bead or a thin layer or a eutectic metal (indium or lead alloy- tin, for example) whose melting temperature is lower than that of lithium.
• a fusible material such as fusible glass deposited in the form of a bead or a thin layer or a eutectic metal (indium or lead alloy- tin, for example) whose melting temperature is lower than that of lithium.
• the assembly of the cover 10 on the substrate 2 or on the intermediate insulating layer 3 is preferably carried out under vacuum or under inert gas (argon or nitrogen, for example), so that the energy source is in a sealed cavity having a neutral or protective atmosphere.
• inert gas argon or nitrogen, for example
• the inert gas possibly contained in the cavity escapes and the ambient atmosphere penetrates into the cavity 9 and comes directly into contact with the parts to be protected.
• the energy source consists of very reactive materials, such as lithium which reacts to air humidity, any attempt to intrude into the component leading to contact with the atmosphere of these materials causes immediate destruction of the energy source and, consequently, makes the component unusable, which reinforces its security vis-à-vis an unauthorized user who tries to access the integrated circuit.
• the integration of an energy source on the same substrate as an integrated circuit, which it supplies at least in part, essentially aims at securing the integrated circuit.
• the energy source can be used to save sensitive information, such as a confidential code, in a memory. Destruction of the energy source in the event of an intrusion removes this information, making the card inviolable and its subsequent use impossible.
• the cavity 9 is delimited laterally by a wall 11 surrounding all of the parts to be protected, the height of the wall 11 being greater than the thickness parties to protect.
• the wall 11, made of glass is formed on the substrate 2 by screen printing, by injection of powders and precursors by means of an injector of the motor vehicle injector type, by injection by means of micro- injectors of the type used in the printer heads, by depositing a glass or resin bead by photolithography or by injection, or by etching a thick layer.
• the cavity is produced by etching the substrate 2, the integrated circuit 1 and the energy source then being buried in the substrate 2.
• the cavity 9 can be closed in leaktight manner by a cover fixed to the wall 11 and constituted by a plate of the same type as the cover 10 described above.
• the cavity 9 is filled with a filling material intended to improve protection and consisting of silicone resin, thermosetting resin, polymer, epoxy, fusible glass or of a metal chosen from indium, tin, lead or their alloys.
• a filling material intended to improve protection and consisting of silicone resin, thermosetting resin, polymer, epoxy, fusible glass or of a metal chosen from indium, tin, lead or their alloys.
• the filled cavity 9 can, moreover, be covered by an additional protective coating 12.
• the latter can consist of a thin, metallic or insulating layer, obtained by deposition (for example CVD or PVD) or by collage of a thin metal sheet.
• the energy source must provide sufficient energy to perform a limited number of operations during the lifetime of the component, while having dimensions as small as possible, compatible with the dimensions of integrated circuits, in particular with their thickness ( from a few tens to a few hundred microns).
• Another suitable source of energy is micro-supercapacity.
• Such supercapacitor is produced in the form of thin films, with the same type of technology as micro-batteries.
• it is constituted by the stack, on an insulating substrate 2, preferably made of silicon, of layers constituting respectively a lower current collector 13, a lower electrode 14, an electrolyte 15, an upper electrode 16 and an upper current collector 17.
• the elements of micro-supercapacity can be made of various materials.
• the electrodes 14 and 16 can be based on carbon or oxides of metals such as Ru0 2 , Ir0 2 , Ta0 2 or Mn0 2 .
• the electrolyte 15 can be a glassy electrolyte of the same type as that of the micro-batteries.
• the micro-supercapacitor can have a surface capacity of the order of 10 ⁇ Ah / cm 2 and its full charge can be obtained in less than a second.
• FIG. 4 A particular embodiment of a micro-supercapacitor usable in a component according to the invention is shown in Figure 4.
• the micro-supercapacitor is formed on the insulating substrate 2, in silicon. It is formed in five successive deposition steps: - In a first step, the lower current collector 13 is formed by deposition of a layer of platinum of 0.2 ⁇ 0.1 ⁇ m in thickness, by radio frequency sputtering.
• the lower electrode 14 made of ruthenium oxide
• Ru0 2 is produced from a metallic ruthenium target, by reactive radio frequency sputtering in a mixture of argon and oxygen (Ar / O 2 ) at room temperature.
• the layer formed has a thickness of 1.5 ⁇ 0.5 ⁇ m.
• a layer of 1.2 ⁇ 0.4 ⁇ m thick, constituting the electrolyte 15, is formed. It is a conductive glass of the Lipon type (Li 3 PO 2 5 N 03 ), obtained by cathode sputtering under partial pressure of nitrogen with a target of Li 3 P0 4 or 0.75 (Li 2 O) -0.25 (P 2 O 5 ).
• the upper electrode 16, made of ruthenium oxide (Ru0 2 ) is produced in the same way as the lower electrode 14 during the second step.
• the upper current collector 17, made of platinum is formed in the same way as the lower current collector 13 during the first step. It is possible to further improve the securing of the component, when the cavity 9 is not filled with a filling material, by placing a pressure sensor inside the cavity 9. The pressure sensor detects any variation in pressure inside the cavity and makes the component unusable when the pressure variation exceeds a predetermined threshold.
• the internal pressure of the cavity whether it is lower (empty) or higher than atmospheric pressure, is likely to vary over time depending on the quality of the assembly (leak, etc.). Its evolution over time is unpredictable and not measurable from the outside.
• the internal pressure of the cavity thus constitutes an inviolable code. Such protection renders an intrusion which would be carried out in a controlled and inert atmosphere ineffective.
• a switch 18, normally open, is connected in parallel to the energy source 19.
• the switch 18 is automatically closed by the pressure sensor when the pressure variation exceeds the predetermined threshold, then short-circuits the energy source 19, which discharges immediately, causing the component to be put out of service.
• the switch 18 may, for example, be constituted by a membrane of the pressure sensor, one face of which is subjected to atmospheric pressure in the event of deterioration of the cavity and the displacement of which causes the short circuit of the energy source. .
• the pressure sensor is supplied by the energy source and managed by the integrated circuit 1.
• the integrated circuit 1 periodically reads the value of the pressure measured by the pressure sensor and detects, by differential comparison, any leakage from the cavity or any malicious intrusion.
• the integrated circuit 1 causes the component to be put out of service, for example by discharging the energy source through an electronic switch constituted by a transistor.
• the frequency of measurement of the pressure in the cavity is adjusted so as to make it impossible for any intrusion into the component, while limiting energy consumption.

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Computer Security & Cryptography (AREA)
• General Engineering & Computer Science (AREA)
• Theoretical Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Secondary Cells (AREA)
• Connection Of Batteries Or Terminals (AREA)
• Measuring Fluid Pressure (AREA)
• Micromachines (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=8868532

Family Applications (1)

Country Status (8)

Families Citing this family (23)

Family Cites Families (9)

• 2001
  • 2001-10-22 FR FR0113569A patent/FR2831327B1/fr not_active Expired - Fee Related
• 2002
  • 2002-10-21 KR KR10-2004-7006007A patent/KR20040071130A/ko not_active Application Discontinuation
  • 2002-10-21 WO PCT/FR2002/003589 patent/WO2003036719A2/fr active Application Filing
  • 2002-10-21 CN CNB028209656A patent/CN1300847C/zh not_active Expired - Fee Related
  • 2002-10-21 AU AU2002360134A patent/AU2002360134A1/en not_active Abandoned
  • 2002-10-21 EP EP02795333A patent/EP1438748A2/de not_active Withdrawn
  • 2002-10-21 JP JP2003539104A patent/JP2005506714A/ja active Pending
  • 2002-10-21 US US10/492,048 patent/US20050001214A1/en not_active Abandoned

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events