EP1422314A1 - Dispositif et procédé de nettoyage des chambres de procédés et lignes de vide - Google Patents

Dispositif et procédé de nettoyage des chambres de procédés et lignes de vide Download PDF

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Publication number
EP1422314A1
EP1422314A1 EP03292742A EP03292742A EP1422314A1 EP 1422314 A1 EP1422314 A1 EP 1422314A1 EP 03292742 A EP03292742 A EP 03292742A EP 03292742 A EP03292742 A EP 03292742A EP 1422314 A1 EP1422314 A1 EP 1422314A1
Authority
EP
European Patent Office
Prior art keywords
process chamber
test plasma
cleaning
test
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03292742A
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German (de)
English (en)
French (fr)
Inventor
Hisanori Kambara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel CIT SA
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA, Alcatel SA filed Critical Alcatel CIT SA
Publication of EP1422314A1 publication Critical patent/EP1422314A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the invention presented in this document relates to cleaning of process chambers and vacuum lines in semiconductor component manufacturing and microtechnology components.
  • the manufacture of semiconductor components and microtechnology components is usually carried out under vacuum in a process chamber.
  • This manufacturing includes many steps, including chemical deposition steps under vapor form (CVD), in which one or more gaseous bodies react on a solid surface to produce a phase deposit solid. It is thus possible to deposit on a semiconductor substrate various solid layers, for example to make circuits electric.
  • solid deposits do not occur only on the semiconductor substrate, but also on the entire wall of the process chamber, and on the wall of the vacuum line which generates and maintains the vacuum in the processes.
  • the same process chamber is used successively for the production of several batches of components, by depots successive on batches of semiconductor wafers.
  • Gold filing solid applied to the wall of the process chamber during the procedure for manufacturing a batch of components is likely to contaminate semiconductor wafers from another batch which is subsequently brought into the room for a second procedure treatment. It is therefore necessary to maintain the purity of the process chamber, to avoid these contaminations of a procedure to the other.
  • the process chambers are cleaned between two successive manufacturing procedures.
  • HDPCVD high density chemical deposition process
  • SiO 2 silicon oxide
  • NF 3 nitrogen trifluoride
  • NF 3 molecules are dissociated by plasma to produce F 2 molecules and excited atoms of atomic fluorine F. Fluorine atoms react with silicon oxide to produce silicon tetrafluoride (SiF 4 ) and others gas molecules. These gases are pumped out of the process chamber through the vacuum line.
  • an HDPCVD deposition procedure takes several minutes to create a 7,500 ⁇ layer of silicon oxide on a silicon wafer.
  • the cleaning step between two deposition procedures again takes several minutes to remove the unwanted layer of silicon oxide on the wall of the process chamber.
  • the cleaning period is adjusted so that it is just sufficient to remove the silicon layer from the wall of the process chamber without substantially attacking the metal of the wall of the process chamber.
  • Adjusting the duration of the cleaning period is currently done by trial and error, so as to determine experimentally after several trials the duration approximate suitable for the process used. An adjustment must be performed for each type of process used. The method is tedious, and does not compensate quickly and effectively variations, adaptations or possible deviations of processes.
  • the document proposes to determine the end of the endpoint cleaning by a secondary source of test plasma, placed directly in the process chamber to generate a plasma from the gases present in the process chamber, and associated with means of spectroscopic analysis of the test plasma thus generated.
  • the test plasma does not act on the walls of the process chamber, and its power must be sufficiently low so as not to affect the cleaning operation ensured by the source distant plasma.
  • This technique is an indirect method, which finds the absence of cleaning by-product in the cleaning plasma generated by the remote plasma source.
  • test plasma generator Information given by the test plasma generator is unreliable because the result also depends on the source of distant plasma itself, and its ability to provide a cleaning.
  • the method gives information only after the complete cleaning of the process chamber, and cannot give information on the progress of a cleaning step in progress. It also follows that the method lacks precision.
  • the problem is to determine quickly, efficiently and reliable the time required to clean the process chamber sufficient and without excess. Undervalued cleaning time does not completely remove the silicon oxide layer on the process chamber wall. Conversely, a duration of overvalued cleaning causes the fluorine atoms to react with the metal of the process chamber wall itself.
  • the NF 3 cleaning gas is an expensive gas, which it is advantageous to minimize the amount used.
  • a cleaning cycle uses around 3.5 liters of NF 3 , and this gas costs around 400 per kilogram.
  • a cassette contains 25 silicon wafers, and a 22 kg bottle of NF 3 is used to clean the chamber during the manufacture of 84 cassettes. This corresponds to a cost of around 100 by cassette for cleaning. This cost is not negligible, and there is an interest in reducing this cost.
  • the NF 3 cleaning gas is a biologically harmful gas, so there is an ecological interest in reducing the quantity used, to avoid degrading the environment.
  • the invention aims to control the cleaning of the vacuum processes and lines, to ensure fair cleaning sufficient process chambers and vacuum lines, thus avoiding both insufficient cleaning and excess cleaning. This ensures good quality of the treatment processes in the process chamber, while minimizing the quantities of cleaning used.
  • the control must be quick, efficient and reliable, so that it can be adapted to all types of processes, and to ensure great flexibility of processes.
  • the essential idea of the invention is to design a device for directly determining the state of cleanliness a process chamber or vacuum line, the device being thus used to control the continuation of the cleaning step as long as the process chamber or the vacuum line is not sufficiently cleaned, and to interrupt the cleaning step as soon as that the process chamber or the vacuum line is sufficient cleaned.
  • a sensor comes to test the nature of the layer surface of a sample of interior wall surface of the process chamber or vacuum line, to detect the presence or the absence of atoms of a deposit layer.
  • the invention provides a cleaning chamber control device vacuum processes and lines, including a plasma source of test, spectral emission measurement means receiving the light radiation from the test plasma, means for analyzing signals obtained from spectral emission measurement means for determine the nature of the atoms present in the test plasma, and means for alternately submitting a surface sample interior of process chamber or vacuum line to be checked, either to the gases prevailing inside the process chamber or vacuum line, either to the plasma source plasma test test.
  • the test plasma acts on the surface sample to test, by sampling surface atoms.
  • these atoms are excited, and emit photons along a spectrum corresponding to the transition energy which is specific to each atom.
  • spectral emission measurement means it is thus possible to identify atoms by analyzing the spectrum optical emitted, and the number of photons emitted is proportional to the number of atoms present in the analyzed sample.
  • the sample is representative of the state of the whole of the interior surface of the process chamber. So we realize a direct, reliable and precise control method.
  • the control device is relatively bulky, and it is excluded to place it entirely and permanently at inside a process chamber to direct it to the interior surface sample to be analyzed.
  • a first embodiment consists in providing a mobile surface sample to be analyzed, installed in the chamber of processes or vacuum line and movable between a first state wherein the active surface of the surface sample to analyze is oriented towards the interior of the process chamber or vacuum line to be subjected to gases from the process chamber or vacuum line and to receive deposits, and a second state in which the active surface of the sample surface to be analyzed is oriented towards the outside of the processes or vacuum line, facing the source of test plasma, to be subjected to the test plasma.
  • first position the sample surface receives the deposit, like all other areas of interior surface of process chamber or vacuum line.
  • second position the surface sample is accessible to be subjected to the test plasma.
  • a second embodiment consists in providing a fiber flexible optics between external emission measurement means spectral and a source of test plasma movable in the process chamber or vacuum line, allowing directing test plasma at predetermined times to an area of inner surface of the process or line chamber wall empty.
  • the source of test plasma takes a first state at the deviation of the surface sample to be analyzed to allow it to act on the surface sample to analyze the gases from the processes or vacuum line, and takes a second state with regard to the surface sample to be analyzed to act on the surface sample to be analyzed the test plasma.
  • the device according to the invention comprises control means for receiving, from the means of analysis, information relating to the nature of atoms present in the test plasma, to control the continuation of the cleaning step as long as the atoms present include deposition atoms, and to interrupt the cleaning step as soon as the atoms present no longer include deposition atoms.
  • the invention also provides a method for cleaning process chambers or vacuum lines, comprising a step of cleaning in which one or more cleaning ensuring the decomposition of deposits on the walls interior of process chambers or vacuum lines; we are planning one or more intermediate control stages in which, by means of a control device defined above, we seek the presence of deposit atoms on at least one sample of interior surface of the process chamber or vacuum line at clean by acting a test plasma on the deposit of the surface sample.
  • the intermediate stages of control can be performed at predetermined times.
  • the predetermined times are preferably chosen at the vicinity of the foreseeable end of cleaning time.
  • the device is applied to a process chamber 1 associated with a vacuum line 2 comprising pumping means 2a for pumping the gas outside the process chamber 1.
  • the control device includes a plasma source of test 3 for generating a test plasma 5.
  • An interface 4 directs test plasma 5 to a sample of inner surface 6 of process chamber 1 or the line of vacuum 2 to be checked.
  • Spectral emission measurement means 7 of the test plasma 5 allow the spectral emission of the test plasma 5.
  • Signals produced by emission measurement means spectral 7 are sent to analysis means 8 allowing analyze the signals obtained to determine the nature of the atoms present in test plasma 5.
  • Control means 9 receive the signals from analysis means 8, and make it possible to control the pursuit or stopping the cleaning stage of the process chamber 1 or the vacuum line 2. For this, the control means 9 control solenoid valves 10 placed in a gas supply pipe cleaning 11 to conduct cleaning gases from a source of cleaning gas 12 into the process chamber 1.
  • means are provided for submitting alternatively the surface sample 6 or to the gases prevailing at inside the process chamber 1 or vacuum line 2, ie at test plasma 5 from test plasma source 3 by through the interface 4.
  • test plasma 3 is illustrated in more detail. according to a particular embodiment, in FIGS. 2 and 3. It can be a plasma generator.
  • the source of test plasma 3 includes a sealed quartz tube having a first end 3a communicating with the interior atmosphere of the process chamber 1 or the vacuum line 2 to be tested, and having a second end 3b blind.
  • the tube is surrounded by an excitation antenna magnetic 13, associated with a radiofrequency generator 14 which supplies it with radio frequency electrical energy to generate the tube a test plasma 5 (FIG. 3).
  • Such a plasma generator can operate within a range internal gas pressures generally ranging from 100 Pa to 1000 Pa.
  • the spectral emission measurement means 7, for example consist of an emission spectrometer, are placed next to the blind end 3b of the tube of the test plasma source 3, to receive through the wall of the tube the light radiation 15 emitted by test plasma 5 present in the tube.
  • the wall of the sealed quartz tube is crossed by the light radiation 15 propagating from the test plasma 5 up to the spectral emission measurement means 7.
  • the interface 4 makes it possible to move an interior surface 6 sample from the methods 1 to be checked between a first state illustrated in the figure 2 and a second state illustrated in FIG. 3.
  • the surface sample 6 is oriented towards the interior of the process chamber 1 or of the vacuum line 2 to be checked, and is thus subjected to the gases 16 from the process chamber 1 or the vacuum line 2, for example with cleaning gas such as NF 3 .
  • the surface sample 6 is subjected to the active plasma in the process chamber 1, which plasma generates a deposit 6a on the entire interior surface of the process chamber 1, and in particular on the surface sample 6.
  • the surface sample 6 is subjected to the action of the cleaning gases 16, the presence of which aims to eliminate the deposit 6a.
  • the object of the invention is precisely to detect the instant from which the deposit 6a has disappeared due to the action of the cleaning gases 16.
  • the sample surface 6 is oriented towards the outside of the process chamber 1 or vacuum line 2, facing the source of test plasma 3 to be subjected to the test plasma 5.
  • the plasma of test 5 picks up from the surface sample 6 possible atoms of the 6a deposit, these atoms generating spectral emissions which are contained in the light radiation 15 propagating towards the spectral emission measurement means 7.
  • the surface sample 6 may be reduced in size, for example by only a few millimeters.
  • the interface 4 optionally further includes a movable closure flap 17 between a closed position of the first end 3a of the source of test plasma 3 during cleaning steps or active process steps, and an open position of the first end 3a during the test steps as illustrated in figure 3.
  • the source of test plasma 3 is itself movable in process chamber 1 or vacuum line 2, taking a first state illustrated in FIG. 6 and a second state illustrated in the figure 5.
  • a plasma source test 3 illustrated schematically in the form of a tube having a first end 3a to communicate with the interior atmosphere of process chamber 1 or vacuum line to be tested, and with a not shown magnetic excitation antenna which is powered in radio frequency electrical energy by the generator radio frequency 14.
  • the source of test plasma 3 is away from the surface sample 6 to analyze, which is then a portion of the wall of the chamber processes 1 or vacuum line.
  • the gases from the chamber of processes 1 or vacuum line act on the sample of surface 6 to be analyzed.
  • cleaning gases 16 gradually reduce the deposit 6a on the surface sample to be analyzed 6 during the cleaning step.
  • the source of test plasma 3 is inside the process chamber 1 or vacuum line, with regard to the surface sample 6 to be analyzed, to act on the surface sample 6 to analyze the plasma test 5 generated by the supply of the excitation antenna magnetic by the radio frequency generator 14.
  • this is connected to the spectral emission measurement means 7 by a fiber flexible optics 19, which conducts light radiation from the source of test plasma 3 to emission measurement means spectral 7.
  • the flexible optical fiber 19 is associated with the line flexible power supply 20 which conducts energy radiofrequency electric from the radiofrequency generator 14 to the magnetic excitation antenna of the plasma source test 3.
  • the source of test plasma 3 is housed in a compartment 21 isolated from the action of plasmas or cleaning gases 16 inside the process chamber 1 by the closing flap 17 actuated by the actuating means 4b such as a motor or a jack.
  • the source of test plasma 3 is moved inside the process chamber 1 after opening of the closing flap 17 by actuation of the means actuation 4b.
  • the plasma source of test is requested by displacement means 4c such as cylinders, simply illustrated in Figure 5 by arrows.
  • actuation means 4a and 4b, and possibly displacement means 4c, such as motors or cylinders, allow the device to pass control between its first and second states.
  • the actuation means comprise a first element 4a, such a cylinder, to rotate the surface sample 6 between the first state position illustrated in Figure 2 and the position second state illustrated in Figure 3, while a second element 4b such as a second cylinder makes it possible to pivot the flap closing 17 between the first state illustrated in FIG. 2 and the second state illustrated in FIG. 3.
  • the process chamber as illustrated in FIG. 1 receives one or more semiconductor wafers 18.
  • the semiconductor wafers 18 undergo chemical deposition steps, etching and other stages in which plasmas are made to act assets generated by a main source of plasma in the room 1. These steps produce, over the entire surface inside of the process chamber 1 and in particular on the surface sample 6, solid deposits such as the deposit 6a.
  • the opening of the solenoid valve 10 is ensured by the control means 9.
  • the cleaning gas 16 then produces a progressive cleaning of the interior surface of the process chamber 1, in particular of the surface sample 6.
  • interface 4 is in its first state in which surface sample 6 is subjected to the action of plasmas active or cleaning plasmas in the process chamber 1.
  • control means 9 cause the operation of the actuating means 4a and 4b and possibly displacement means 4c for passing interface 4 from its first state to its second state, so that the surface sample 6 is subjected to the action of the test plasma 5.
  • the means actuation 4a and 4b rotate the surface sample 6 towards the source of test plasma 3, and rotate the shutter closure 17 away from the source of test plasma 3.
  • the displacement means 4c move the source of test plasma 3 from its first state illustrated in FIG. 6 towards its second state illustrated in FIG. 5 and the means actuation 4b rotate the closing flap 17.
  • control means 9 cause the generator to operate radio frequency 14 which excites the gases inside the tube of the source of test plasma 3 to generate test plasma 5.
  • the test plasma 5 then acts on the deposit 6a of the sample of surface 6, releasing atoms which are then excited and produce light radiation 15 perceived by the measuring means spectral emission 7.
  • the spectral emission measurement means 7 then send signals to the analysis means 8 which determine the nature of the atoms present in the test plasma and communicate this information to the control means 9.
  • control means 9 continue the cleaning step, after having acted on the actuation means 4a and 4b to bring the interface back 4 in its first state and to thereby submit the sample of surface 6 to the action of the cleaning gases 16, for a period determined at the end of which a step is started again control intermediary under the same conditions as above.
  • control means 9 actuate the solenoid valve 10 to interrupt the intake of cleaning gases and end the cleaning step. Control means then bring interface 4 back to its first state, so that the process chamber 1 is returned to its operating state for active process steps.
  • control means 9 can simply continue the cleaning step for a period predetermined, estimated so that cleaning is sufficient and is then interrupted.
  • Figure 4 illustrates the general diagram of the organs actuation of the device of Figures 1 to 3 and 5 and 6.
  • Analysis means send their signals to the control means 9 which act in a leaves on solenoid valve 10 to continue or interrupt the step cleaning, and which act on the actuating or displacement 4a (and / or 4b and / or 4c) to modify the state of the control device in the process chamber 1.
  • the means of control 9 also act on the radio frequency generator 14 to power the magnetic excitation antenna 13 which excites the gas atoms in the test plasma source 3 to generate the test plasma 5.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
EP03292742A 2002-11-21 2003-11-04 Dispositif et procédé de nettoyage des chambres de procédés et lignes de vide Withdrawn EP1422314A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0214571A FR2847713B1 (fr) 2002-11-21 2002-11-21 Dispositif et procede de nettoyage des chambres de procedes et lignes de vide
FR0214571 2002-11-21

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EP1422314A1 true EP1422314A1 (fr) 2004-05-26

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US (1) US20040099282A1 (ja)
EP (1) EP1422314A1 (ja)
JP (1) JP2004221542A (ja)
FR (1) FR2847713B1 (ja)

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DE102004061269A1 (de) * 2004-12-10 2006-06-14 Siemens Ag Verfahren zum Reinigen eines Werkstückes mit Halogenionen
JP5281766B2 (ja) * 2007-07-31 2013-09-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TWI592650B (zh) * 2015-08-20 2017-07-21 國立臺灣大學 檢測裝置
US11927508B1 (en) * 2020-01-21 2024-03-12 Elemental Scientific, Inc. System and method for handling small samples with multiple vacuum configurations
CN111627797B (zh) * 2020-06-08 2022-06-10 中国电子科技集团公司第二十四研究所 一种提高半导体芯片键合可靠性的处理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166972A (ja) * 1986-12-26 1988-07-11 Matsushita Electric Ind Co Ltd プラズマｃｖｄ方法
US5322590A (en) * 1991-03-24 1994-06-21 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
US5676759A (en) * 1993-08-09 1997-10-14 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
US6110291A (en) * 1992-11-30 2000-08-29 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
US20020020429A1 (en) * 2000-07-07 2002-02-21 Selbrede Steven C. Systems and methods for remote plasma clean
WO2002091453A1 (en) * 2001-05-04 2002-11-14 Lam Research Corporation High pressure wafer-less auto clean for etch applications

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166972A (ja) * 1986-12-26 1988-07-11 Matsushita Electric Ind Co Ltd プラズマｃｖｄ方法
US5322590A (en) * 1991-03-24 1994-06-21 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
US6110291A (en) * 1992-11-30 2000-08-29 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
US5676759A (en) * 1993-08-09 1997-10-14 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
US20020020429A1 (en) * 2000-07-07 2002-02-21 Selbrede Steven C. Systems and methods for remote plasma clean
WO2002091453A1 (en) * 2001-05-04 2002-11-14 Lam Research Corporation High pressure wafer-less auto clean for etch applications

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 012, no. 444 (C - 545) 22 November 1988 (1988-11-22) *

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JP2004221542A (ja) 2004-08-05
FR2847713B1 (fr) 2005-03-18
FR2847713A1 (fr) 2004-05-28
US20040099282A1 (en) 2004-05-27

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