EP1412987A2 - Composant optoelectronique a structure de contact conductrice - Google Patents
Composant optoelectronique a structure de contact conductriceInfo
- Publication number
- EP1412987A2 EP1412987A2 EP02754568A EP02754568A EP1412987A2 EP 1412987 A2 EP1412987 A2 EP 1412987A2 EP 02754568 A EP02754568 A EP 02754568A EP 02754568 A EP02754568 A EP 02754568A EP 1412987 A2 EP1412987 A2 EP 1412987A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- optoelectronic component
- component according
- conductive material
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 8
- 230000001419 dependent effect Effects 0.000 claims abstract description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004737 colorimetric analysis Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
Definitions
- An optoelectronic component of the type described is known from B. Schneider, P. Rieve, M. Böhm, Image Sensors in TFA (Thin Film on ASIC) technology, ed. B. Jahne, H. Hauscker, P. G complicatler, Handbook of Computer Vision and Applications, pp. 237-270, Academic Press, San Diego, 1999).
- An optoelectronic component of this type consists of a matrix-organized or linear arrangement of pixels, so-called "pixels".
- the electronic circuits for operating the component ie the pixel electronics, peripheral electronics or system electronics, are usually implemented in CMOS-based silicon technology and form an application-specific integrated circuit (ASIC).
- CMOS Active Pixel Sensor Imagers MRS Symposium Proceedings, vol. 609, 2000
- a pin configuration based on amorphous silicon is used as the photodiode, i.e. a sequence of a p-conducting, an intrinsically conducting (intrinsic) and one n-type amorphous silicon layer.
- the n-layer usually forms the lowest layer facing the ASIC.
- the electrical contacts are formed on this side facing the ASIC, for example by a metal layer, while the contacting on the side facing the direction of light incidence in usually done by a transparent and conductive layer.
- further component structures are also possible, for example Schottky photodiodes, in which an intrinsic semiconductor layer is brought into contact with a suitable metal (for example chromium, platinum, palladium, silver), so that the metal-semiconductor transition forms a Schottky photodiode.
- Detector structures with controllable spectral sensitivity are also known (P. Rieve, M. Sommer, M. Wagner, K. Seibel, M.
- TFA image sensor can also be expanded by additional layers upstream in the direction of light incidence, for example by color filter layers (for example Bayer pattern, US Pat. No. 3,910,065).
- dark pixels there are so-called “dark pixels” in the arrangement, the dark signals resulting from these pixels serving as reference signals, which are subtracted from the actual image signals during operation of the sensor, for example, in order to increase the dark current adhering to the photodiodes and its temperature dependence eliminate. Furthermore, the dark signals are used in order to be able to compensate for differences in the amplifications of the column amplifiers as part of correction methods.
- the production-related realization of such dark pixels takes place by applying an opaque layer made of a suitable material to the photoactive layers of the optoelectronic component, which layer is structured in such a way that it areas to be darkened while it is removed over the photoactive areas.
- the diode is formed as a pin diode, then a negative potential applied to the connection electrode can be applied via the diode operated in the forward direction, taking into account a current-dependent one Voltage drop are transferred to the front electrode.
- the second exemplary embodiment of the second variant of the invention according to FIG. 4 differs from that as was shown in FIG. 3 in that an n-doped amorphous silicon layer 6 is additionally applied to the metal contacts 5.
- the diode formed in region P is designed as a pin diode, but otherwise the same structure results as in FIG. 3.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
L'invention concerne un composant optoélectronique servant à transformer un rayonnement électromagnétique en un courant photoélectrique lié à l'intensité. Ce composant comprend un substrat (1) réalisé en particulier selon la technologie CMOS, qui présente une structure à semiconducteurs intégrée (ASIC) et une structure en couches minces, optiquement active, située en amont dans le sens d'incidence de la lumière. Cette structure comprend une couche (9) constituée d'un matériau conducteur transparent et au moins une couche (6, 7, 8) constituée d'un matériau semiconducteur. Ces couches sont placées sur une couche isolante (4) à l'intérieur de laquelle se trouvent des moyens de raccordement (2, 3, 5) servant à établir un contact entre la structure en couches minces, optiquement active, et la structure à semiconducteurs intégrée, placée sur le substrat. L'objectif de l'invention est d'améliorer un tel composant optoélectronique de sorte la liaison électrique entre la couche (9) de matériau conducteur transparent et une borne de potentiel électrique (15) puisse être réalisée de manière techniquement simple. A cet effet, la couche de matériau conducteur transparent peut être reliée à la borne de potentiel (15) placée à l'extérieur de l'ensemble de pixels par l'intermédiaire d'une structure (10, 11, 12, 13) conductrice, formée en outre sur le substrat.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10123871 | 2001-05-16 | ||
| DE10123871 | 2001-05-16 | ||
| DE10155816 | 2001-11-15 | ||
| DE10155817 | 2001-11-15 | ||
| DE10155817 | 2001-11-15 | ||
| DE10155816 | 2001-11-15 | ||
| DE10159994 | 2001-12-06 | ||
| DE10159994 | 2001-12-06 | ||
| PCT/EP2002/005336 WO2002093653A2 (fr) | 2001-05-16 | 2002-05-15 | Composant optoelectronique a structure de contact conductrice |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1412987A2 true EP1412987A2 (fr) | 2004-04-28 |
Family
ID=27437968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP02754568A Withdrawn EP1412987A2 (fr) | 2001-05-16 | 2002-05-15 | Composant optoelectronique a structure de contact conductrice |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7382034B2 (fr) |
| EP (1) | EP1412987A2 (fr) |
| AU (1) | AU2002321022A1 (fr) |
| WO (1) | WO2002093653A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1440476B1 (fr) * | 2001-10-29 | 2008-02-13 | STMicroelectronics N.V. | Procede pour produire une mise en contact de photodiode pour capteur d'image tfa |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227237B2 (en) * | 2003-12-22 | 2007-06-05 | Palo Alto Research Center Incorporated | Systems and methods for biasing high fill-factor sensor arrays and the like |
| KR100628238B1 (ko) | 2004-12-30 | 2006-09-26 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서 및 그의 제조 방법 |
| FR2880990B1 (fr) * | 2005-01-14 | 2007-04-27 | St Microelectronics Sa | Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif. |
| WO2006089447A1 (fr) * | 2005-02-28 | 2006-08-31 | Unaxis Balzers Aktiengesellschaft | Procédé de fabrication d’un dispositif capteur d’image avec diaphonie de pixel réduite |
| KR100861644B1 (ko) * | 2007-12-27 | 2008-10-07 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
| US8753917B2 (en) * | 2010-12-14 | 2014-06-17 | International Business Machines Corporation | Method of fabricating photoconductor-on-active pixel device |
| WO2014103150A1 (fr) * | 2012-12-28 | 2014-07-03 | パナソニック株式会社 | Dispositif d'imagerie monolithique et son procédé de fabrication |
| ITUB20151963A1 (it) * | 2015-07-07 | 2017-01-07 | Lfoundry Srl | Sensore ottico a risposta angolare stretta |
| DE102015118417A1 (de) * | 2015-10-28 | 2017-05-04 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
| CN114664974B (zh) * | 2022-02-15 | 2023-10-27 | 中国电子科技集团公司第十一研究所 | 红外焦平面器件芯片及制备方法、读出电路及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
| US6018187A (en) * | 1998-10-19 | 2000-01-25 | Hewlett-Packard Cmpany | Elevated pin diode active pixel sensor including a unique interconnection structure |
| US5936261A (en) * | 1998-11-18 | 1999-08-10 | Hewlett-Packard Company | Elevated image sensor array which includes isolation between the image sensors and a unique interconnection |
| US6670599B2 (en) * | 2000-03-27 | 2003-12-30 | Aegis Semiconductor, Inc. | Semitransparent optical detector on a flexible substrate and method of making |
-
2002
- 2002-05-15 AU AU2002321022A patent/AU2002321022A1/en not_active Abandoned
- 2002-05-15 EP EP02754568A patent/EP1412987A2/fr not_active Withdrawn
- 2002-05-15 WO PCT/EP2002/005336 patent/WO2002093653A2/fr not_active Application Discontinuation
- 2002-05-15 US US10/477,913 patent/US7382034B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| See references of WO02093653A2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1440476B1 (fr) * | 2001-10-29 | 2008-02-13 | STMicroelectronics N.V. | Procede pour produire une mise en contact de photodiode pour capteur d'image tfa |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002093653A2 (fr) | 2002-11-21 |
| US7382034B2 (en) | 2008-06-03 |
| AU2002321022A1 (en) | 2002-11-25 |
| WO2002093653A3 (fr) | 2003-12-11 |
| US20060249762A1 (en) | 2006-11-09 |
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| Date | Code | Title | Description |
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| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: LULE, TAREK Inventor name: SCHOLZ, MARKUS Inventor name: SEIBEL, KONSTANTIN Inventor name: PRIMA, JENS Inventor name: WALDER, MARCUS Inventor name: RIEVE, PETER Inventor name: RONNEBERGER, REINHARD |
|
| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: LULE, TAREK Inventor name: SCHOLZ, MARKUS Inventor name: SEIBEL, KONSTANTIN Inventor name: PRIMA, JENS Inventor name: WALDER, MARCUS Inventor name: RIEVE, PETER Inventor name: RONNEBERGER, REINHARD |
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| 17Q | First examination report despatched |
Effective date: 20070927 |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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| 18D | Application deemed to be withdrawn |
Effective date: 20091201 |