EP1396870A2 - Sputterionenquelle - Google Patents
Sputterionenquelle Download PDFInfo
- Publication number
- EP1396870A2 EP1396870A2 EP03017996A EP03017996A EP1396870A2 EP 1396870 A2 EP1396870 A2 EP 1396870A2 EP 03017996 A EP03017996 A EP 03017996A EP 03017996 A EP03017996 A EP 03017996A EP 1396870 A2 EP1396870 A2 EP 1396870A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- cathode
- sputter
- ion source
- electrode
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
Definitions
- the invention relates to a sputter ion source.
- the use of the invention is particular given Cs sputter ion sources on particle accelerators.
- Cs sputter ion sources It is known to generate negative ions for acceleration on particle accelerators using Cs sputter ion sources (GD Alton, Nuclear Instruments and Methods B73 (1993), page 254).
- Cs atoms on a hot surface (ionizer) are converted into positive Cs ions in Cs sputter ion sources. These are accelerated toward the cathode by a potential difference between the ionizer and the negative cathode and are focused on a sputtering insert, which consists of the material for the negative ions to be generated.
- the negative ions resulting from the atomization of the sputtering insert are accelerated in the direction of the ionizer by the same potential difference and extracted through an opening in the center of the ionizer.
- the most commonly used sputter ion source on commercial accelerators is the IONEX 860-C or HVEE 860-C from High Voltage Engineering Europa BV Amersfoort / NL (HVEE manual A-4-35-106 for sputter ion source 860-C), which has been used for approx. 10 Years has been produced unchanged.
- a disadvantage of their construction is the wear on the shielding cap of the cathode and the associated covering of the cathode insulator with conductive material, which necessitates periodic replacement of these parts and thus disassembly of the ion source. This disadvantage cannot be explained by the ion-optical structure of the ion source and the trajectories of the Cs ions that form on the ionizer surface.
- the invention has for its object to increase the life of a sputter ion source increase, reduce maintenance and atomization of the parts of the ion source, which is close to the cathode insert required to generate the negative ions largely prevent.
- Positive Cs ions could be identified as the cause of the atomization of the source parts arise outside of the spherical ionizer surface, e.g. B. on an adjacent hot Electrode for forming the positive Cs ion beam. These unwanted ions will prevented by the shielding electrode according to the invention from hitting the cathode.
- the shielding electrode surrounds the sensitive parts of the cathode holder and the cathode insulator. By making the potential of this shielding electrode equal or approximate If the potential of the ionizer is chosen, the Cs ions to be shielded hit not or only with little energy on this shielding electrode and do nothing Atomisation. By attaching the shielding electrode to the coldest part of the inner source vessel is a thermal ionization of Cs atoms on the surface prevents this electrode.
- the advantage of the invention is that the sputtering of the cathode parts and the resulting coverage of the cathode insulator with conductive material largely be avoided. This increases the lifespan of the ion source, the maintenance effort and reduced the cost of spare parts and the availability of the facility on which the ion source is used, improved.
- the drawing shows the inner part of a known Cs sputtering ion source of the type 860-C with the parts ionizer 2, cathode 3, sputter insert 4, forming electrode 5, shielding cap 6 and cathode insulator 7.
- an additional hollow cylindrical shielding electrode 1 is introduced, which surrounds the sputter cathode with the components cathode 3, sputter insert 4 and shielding cap 6.
- the shielding electrode 1 is tapered in a rotationally symmetrical manner.
- the shielding electrode 1 can be connected to the housing by screwing.
- the shielding electrode 1 should be attached as far away from the ionizer 2 as possible.
- the positive Cs ions are generated on the spherical surface of the hot ionizer 2 and accelerated by a potential difference between the ionizer 2 and the cathode 3 and focused on the sputter insert 4 of the cathode 3.
- Positive Cs ions also form on the hot surface of the formation electrode 5 and are accelerated onto the shielding cap 6 of the cathode 3.
- the atomized material of the shielding cap 6 is deposited, among other things, on the surface of the cathode insulator 7 and leads to a short circuit within the ion source. Depending on the operating regime of the source, the shielding cap 6 and the cathode insulator 7 must be replaced after 500 operating hours.
- the additional shielding electrode 1 increases the lifespan of the source many times over.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Die an kommerziellen Beschleunigern meistverwendete Sputterionenquelle ist die IONEX 860-C bzw. HVEE 860-C der Firma High Voltage Engineering Europa B.V. Amersfoort/NL (HVEE Handbuch A-4-35-106 für Sputterionenquelle 860-C), welche seit ca. 10 Jahren unverändert produziert wird. Nachteil bei deren Aufbau ist der Verschleiß der Abschirmkappe der Kathode und die damit verbundene Bedeckung des Kathodenisolators mit leitendem Material, was einen periodischen Austausch dieser Teile und damit eine Zerlegung der Ionenquelle erforderlich macht. Dieser Nachteil ist aus dem ionenoptischen Aufbau der Ionenquelle und den Bahnen der an der Ionisiereroberfläche entstehenden Cs-Ionen nicht zu erklären.
Die Zeichnung zeigt den inneren Teil einer an sich bekannten Cs-Sputterionenquelle vom Typ 860-C mit den Teilen Ionisierer 2, Katode 3, Sputtereinsatz 4, Formierungselektrode 5, Abschirmkappe 6 und Kathodenisolator 7. Nach der Erfindung wird eine zusätzliche hohlzylinderförmige Abschirmelektrode 1 eingebracht, die die Sputterkathode mit den Bauteilen Kathode 3, Sputtereinsatz 4 und Abschirmkappe 6 umgibt. Im Bereich des Sputtereinsatzes 4 ist die Abschirmelektrode 1 rotationssymmetrisch verjüngt ausgebildet Die Abschirmelektrode 1 kann mittels Verschrauben mit dem Gehäuse verbunden werden. Dabei soll die Abschirmelektrode 1 so weit wie möglich vom Ionisierer 2 entfernt angebracht werden.
Die positiven Cs-Ionen werden an der sphärischen Oberfläche des heißen Ionisierers 2 erzeugt und durch eine Potentialdifferenz zwischen Ionisierer 2 und Kathode 3 beschleunigt und auf den Sputtereinsatz 4 der Kathode 3 fokussiert. An der heißen Oberfläche der Formierungselektrode 5 entstehen ebenfalls positive Cs-Ionen, die auf die Abschirmkappe 6 der Kathode 3 beschleunigt werden. Das zerstäubte Material der Abschirmkappe 6 lagert sich unter anderem auch auf der Oberfläche des Kathodenisolators 7 ab und führt zu einem Kurzschluss innerhalb der Ionenquelle. In Abhängigkeit von dem Betriebsregime der Quelle müssen nach 500 Betriebsstunden die Abschirmkappe 6 und der Kathodenisolator 7 ausgetauscht werden. Durch die zusätzliche Abschirmelektrode 1 steigt die Lebensdauer der Quelle um ein Vielfaches an.
Claims (4)
- Sputterionenquelle, im Wesentlichen bestehend aus den Bauteilen Ionisierer (2), Kathode (3), Sputtereinsatz (4), Formierungselektrode (5), Abschirmkappe (6) und Kathodenisolator (7) in einem vakuumdichten Gehäuse, dadurch gekennzeichnet, dass eine Abschirmelektrode (1) hohlzylinderförmig um die Sputterkathode, bestehend aus den Bauteilen Kathode (3), Sputtereinsatz (4) und Abschirmkappe (6), angeordnet ist, wobei die Abschirmelektrode (1) im Bereich des Sputtereinsatzes (4) rotationssymmetrisch verjüngt ausgebildet ist.
- Sputterionenquelle nach Anspruch 1, dadurch gekennzeichnet, dass sich die Abschirmelektrode (1) auf oder annähernd auf dem Potential des Ionisierers (2) und auf dem des Gehäuses befindet.
- Sputterionenquelle nach Anspruch 1, dadurch gekennzeichnet, dass die der Kathode (3) zugewandte Seite der Formierungselektrode (5) mit der Abschirmelektrode (1) verbunden ist und die Verbindung zwischen der Vorderseite der Formierungselektrode (5) zum Ionisierer (2) entfällt.
- Sputterionenquelle nach Anspruch 1, dadurch gekennzeichnet, dass die Abschirmelektrode (1) mit dem kältesten Teil des Gehäuses verbunden ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10241252 | 2002-09-06 | ||
DE10241252A DE10241252B4 (de) | 2002-09-06 | 2002-09-06 | Sputterionenquelle |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1396870A2 true EP1396870A2 (de) | 2004-03-10 |
EP1396870A3 EP1396870A3 (de) | 2004-07-21 |
EP1396870B1 EP1396870B1 (de) | 2006-04-26 |
Family
ID=31502445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03017996A Expired - Lifetime EP1396870B1 (de) | 2002-09-06 | 2003-08-07 | Sputterionenquelle |
Country Status (4)
Country | Link |
---|---|
US (1) | US6929725B2 (de) |
EP (1) | EP1396870B1 (de) |
AT (1) | ATE324667T1 (de) |
DE (2) | DE10241252B4 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI780356B (zh) * | 2018-09-07 | 2022-10-11 | 美商瓦里安半導體設備公司 | 離子植入機及離子植入設備 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2957455B1 (fr) * | 2010-03-09 | 2012-04-20 | Essilor Int | Enveloppe de protection pour canon a ions, dispositif de depot de materiaux par evaporation sous vide comprenant une telle enveloppe de protection et procede de depot de materiaux |
KR102082168B1 (ko) * | 2012-02-08 | 2020-02-27 | 엠케이에스 인스트루먼츠, 인코포레이티드 | 압력을 측정하는 이온화 게이지 및 이를 이용한 압력 측정 방법 |
US10643823B2 (en) | 2018-09-07 | 2020-05-05 | Varian Semiconductor Equipment Associates, Inc. | Foam in ion implantation system |
US11031205B1 (en) * | 2020-02-04 | 2021-06-08 | Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin | Device for generating negative ions by impinging positive ions on a target |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2610165C2 (de) * | 1976-03-11 | 1983-11-10 | Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt | Duoplasmatron-Ionenquelle zur Erzeugung mehrfach geladener Ionen |
JP3304861B2 (ja) * | 1997-12-19 | 2002-07-22 | 日新ハイボルテージ株式会社 | セシウムスパッタ形負イオン源 |
-
2002
- 2002-09-06 DE DE10241252A patent/DE10241252B4/de not_active Expired - Fee Related
-
2003
- 2003-08-07 EP EP03017996A patent/EP1396870B1/de not_active Expired - Lifetime
- 2003-08-07 DE DE50303089T patent/DE50303089D1/de not_active Expired - Lifetime
- 2003-08-07 AT AT03017996T patent/ATE324667T1/de not_active IP Right Cessation
- 2003-09-04 US US10/655,896 patent/US6929725B2/en not_active Expired - Fee Related
Non-Patent Citations (4)
Title |
---|
ALTON G D: "ION SOURCES FOR ACCELERATORS IN MATERIALS RESEARCH" NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, Bd. B73, Nr. 2, 1. Februar 1993 (1993-02-01), Seiten 221-288, XP000381499 ISSN: 0168-583X * |
LIU LIANFAN ET AL: "THE AMS SYSTEM AT THE SHANGHAI INSTITUTE OF NUCLEAR RESEARCH" NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, Bd. B52, Nr. 3 / 4, 2. Dezember 1990 (1990-12-02), Seiten 298-300, XP000178381 ISSN: 0168-583X * |
MOUS D J W ET AL: "THE HVEE TANDETRON LINE;NEW DEVELOPMENTS AND DESIGN CONSIDERATIONS" NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, Bd. B62, Nr. 3, 2. Januar 1992 (1992-01-02), Seiten 421-424, XP000248270 ISSN: 0168-583X * |
R. MIDDLETON: "A versatile high intensity negative ion source" NUCLEAR INSTRUMENTS AND METHODS, Bd. 214, 1. September 1983 (1983-09-01), Seiten 139-150, XP009031202 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI780356B (zh) * | 2018-09-07 | 2022-10-11 | 美商瓦里安半導體設備公司 | 離子植入機及離子植入設備 |
Also Published As
Publication number | Publication date |
---|---|
ATE324667T1 (de) | 2006-05-15 |
US20040182699A1 (en) | 2004-09-23 |
EP1396870A3 (de) | 2004-07-21 |
EP1396870B1 (de) | 2006-04-26 |
DE10241252B4 (de) | 2004-09-02 |
DE50303089D1 (de) | 2006-06-01 |
DE10241252A1 (de) | 2004-03-25 |
US6929725B2 (en) | 2005-08-16 |
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