DE50303089D1 - Sputterionenquelle - Google Patents

Sputterionenquelle

Info

Publication number
DE50303089D1
DE50303089D1 DE50303089T DE50303089T DE50303089D1 DE 50303089 D1 DE50303089 D1 DE 50303089D1 DE 50303089 T DE50303089 T DE 50303089T DE 50303089 T DE50303089 T DE 50303089T DE 50303089 D1 DE50303089 D1 DE 50303089D1
Authority
DE
Germany
Prior art keywords
sputter
cathode
insert
shielding
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50303089T
Other languages
English (en)
Inventor
Dr Friedrich
Dr Tyrroff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Dresden Rossendorf eV
Original Assignee
Forschungszentrum Dresden Rossendorf eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Dresden Rossendorf eV filed Critical Forschungszentrum Dresden Rossendorf eV
Priority to DE50303089T priority Critical patent/DE50303089D1/de
Application granted granted Critical
Publication of DE50303089D1 publication Critical patent/DE50303089D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
DE50303089T 2002-09-06 2003-08-07 Sputterionenquelle Expired - Lifetime DE50303089D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50303089T DE50303089D1 (de) 2002-09-06 2003-08-07 Sputterionenquelle

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10241252A DE10241252B4 (de) 2002-09-06 2002-09-06 Sputterionenquelle
DE50303089T DE50303089D1 (de) 2002-09-06 2003-08-07 Sputterionenquelle

Publications (1)

Publication Number Publication Date
DE50303089D1 true DE50303089D1 (de) 2006-06-01

Family

ID=31502445

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10241252A Expired - Fee Related DE10241252B4 (de) 2002-09-06 2002-09-06 Sputterionenquelle
DE50303089T Expired - Lifetime DE50303089D1 (de) 2002-09-06 2003-08-07 Sputterionenquelle

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10241252A Expired - Fee Related DE10241252B4 (de) 2002-09-06 2002-09-06 Sputterionenquelle

Country Status (4)

Country Link
US (1) US6929725B2 (de)
EP (1) EP1396870B1 (de)
AT (1) ATE324667T1 (de)
DE (2) DE10241252B4 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2957455B1 (fr) * 2010-03-09 2012-04-20 Essilor Int Enveloppe de protection pour canon a ions, dispositif de depot de materiaux par evaporation sous vide comprenant une telle enveloppe de protection et procede de depot de materiaux
KR102082168B1 (ko) * 2012-02-08 2020-02-27 엠케이에스 인스트루먼츠, 인코포레이티드 압력을 측정하는 이온화 게이지 및 이를 이용한 압력 측정 방법
US10643823B2 (en) 2018-09-07 2020-05-05 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
US11222768B2 (en) 2018-09-07 2022-01-11 Varian Semiconductor Equipment Associates, Inc. Foam in ion implantation system
US11031205B1 (en) * 2020-02-04 2021-06-08 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin Device for generating negative ions by impinging positive ions on a target

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610165C2 (de) * 1976-03-11 1983-11-10 Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt Duoplasmatron-Ionenquelle zur Erzeugung mehrfach geladener Ionen
JP3304861B2 (ja) * 1997-12-19 2002-07-22 日新ハイボルテージ株式会社 セシウムスパッタ形負イオン源

Also Published As

Publication number Publication date
ATE324667T1 (de) 2006-05-15
US20040182699A1 (en) 2004-09-23
EP1396870A3 (de) 2004-07-21
EP1396870B1 (de) 2006-04-26
DE10241252B4 (de) 2004-09-02
EP1396870A2 (de) 2004-03-10
DE10241252A1 (de) 2004-03-25
US6929725B2 (en) 2005-08-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FORSCHUNGSZENTRUM DRESDEN - ROSSENDORF E.V., 0, DE