EP1353352A1 - Hochfrequenz-Elektronenquelle, insbesondere Neutralisator - Google Patents
Hochfrequenz-Elektronenquelle, insbesondere Neutralisator Download PDFInfo
- Publication number
- EP1353352A1 EP1353352A1 EP03007602A EP03007602A EP1353352A1 EP 1353352 A1 EP1353352 A1 EP 1353352A1 EP 03007602 A EP03007602 A EP 03007602A EP 03007602 A EP03007602 A EP 03007602A EP 1353352 A1 EP1353352 A1 EP 1353352A1
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- EP
- European Patent Office
- Prior art keywords
- frequency
- electron source
- electrode
- electrons
- frequency electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000605 extraction Methods 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 11
- 230000007935 neutral effect Effects 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001994 activation Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/025—Electron guns using a discharge in a gas or a vapour as electron source
Definitions
- the invention relates to a high-frequency electron source, in particular as Neutralizer of an ion source, in particular an ion drive comprising a Discharge space with at least one gas inlet for a to be ionized Gas and at least one extraction opening for electrons.
- Hollow Cathode Plasma Bridge Neutralizers used with electron emitter The neutralizer exists here from a cathode tube in the flow direction through a cathode disc is completed with a centric bore and an anode disc with also centric bore. Inside the cathode tube is a Electron emitter, the porous material with alkaline earth metals, u. a. Barium, is interspersed. Outside on the cathode tube is a coil-shaped electric heater attached, which heats the cathode tube and the electron emitter. This in The barium emitted by the electron emitter emits electrons.
- a disadvantage of this arrangement is that the E-mittermaterial contained in the electron emitter is hygroscopic and also at elevated temperatures with oxygen responding. This draws severe limitations in storage prior to installation, during installation at the satellite and commissioning before starting in the space after itself.
- Another disadvantage of such complicated and limited in life Electron sources is that before switching on a Pre-heating time of the emitter is preceded by several minutes.
- Such a high-frequency electron source generates electrons through a plasma, that caused by the induction by a magnetic alternating field is maintained. This field is generated by the radio-frequency coil, through which a high-frequency current flows.
- the plasma present Electrons are accelerated by induction to velocities in the Trap of impact with a neutral atom in plasma the ionization of the latter can effect. Ionization becomes one or more other electrons released from the neutral atom, resulting in an inflowing working gas yields continuous flux of electrons.
- the object of the present invention is to provide a high frequency electron source provide, on the one hand has no electron emitter and thus none Heating time requires and manages without complicated, costly components, which are to be protected against oxygen and moisture. On the other hand, one should Be provided electron source, which has a reduced power consumption having.
- the object is achieved according to the invention in that the discharge space at least one electrode and a keeper electrode at least is partially surrounded and that between the electrodes an electric High frequency field is applied.
- the high-frequency electron source works with a cold arc discharge, by the electron-supplying plasma with a capacitive high-frequency discharge is generated by a high-frequency electric field between the electrodes is generated in the discharge space. It is for the invention not necessary that the electrodes surround the discharge space and a Form cavity. You just need to be suitable to the plasma in the discharge space to ignite and maintain.
- the ignition of the discharge of the high-frequency electron source can by a Pressure surge done, for example, by a brief increase in the Mass flow is generated by the electron source. This will be the ignition voltage on the so-called Paschen curve reduced to its minimum and the Gas train fails. The accelerated electrons then hit again more electrons out of neutral particles and ionize them. By this progressive ionization produces a plasma which needed the Supplying electrons.
- the advantages of the high-frequency electron source are simple, uncomplicated Construction. Thus eliminates heating including electronics and electron emitter, which also the restrictions on storage and environmental conditions during assembly and operation are omitted. For example, a test of functionality after manufacture without affecting the life of the High frequency electron source possible under normal environmental conditions. Furthermore can be used to operate noble gases such as xenon or other suitable gases not specifically used for this purpose of oxygen and residual moisture need to be cleaned. By eliminating the preheating time and the activation processes also results in a fast availability of electrons, so when neutralizing an ion drive this instantly gets its thrust can provide.
- the inventive High frequency electron source has a very low power consumption.
- the discharge space is surrounded by a plasma chamber. hereby a possible loss of gas is minimized.
- an electrode is designed that it forms the plasma chamber.
- an electrode forms the plasma chamber, it is preferably used as a hollow cathode educated. This provides an optimal geometry for inclusion the plasma is formed and also the capacitive coupling of the high frequency field supported in the plasma by such a geometry.
- the orientation of the electric high-frequency field with respect to the extraction direction the electrons can be arbitrary, preferably the electrical High frequency field but parallel to the extraction direction.
- the field can also be perpendicular to the extraction direction issue.
- the discharge frequency is freely selectable within wide limits and can thus be optimally adapted to the requirements become.
- the frequency of the electrical Hochfreqenzfeldes however between 100 KHz and 50 MHz.
- a high frequency generator HF generator
- RF generator radio-frequency generator
- the matching network is a toroidal transformer.
- the field strength of the electric High frequency field are optimally adapted to the discharge conditions.
- the plasma chamber is formed as an electrode is, it has been found that it is beneficial to the Keeper electrode to the active output of the HF generator and the electrode to ground potential to lay.
- the electrode and the keeper electrode of a shield electrode be surrounded.
- the electrode is active Output of the HF generator and the Keeper electrode to ground potential.
- the shield electrode can be omitted.
- the high-frequency electron source can between the electrodes in addition to the application of electrical High frequency field to be applied a DC voltage. This is the plasma electrons the exit from the electron source facilitates.
- the DC voltage but also over the auxiliary electrodes are applied, for which they are around the discharge space be grouped.
- the electrodes are preferably made of a metallic Material such as titanium, molybdenum, tungsten, steel, especially stainless steel or aluminum or tantalum. As non-metallic materials are coming especially graphite, carbon composites or conductive ceramics into consideration.
- Fig. 1 shows the high-frequency electron source 10 with an electrode 12 a, the formed as a hollow cathode plasma chamber and the discharge space 11 surrounds.
- This has a circular cross-section and on one side a gas inlet 14 for the operating gas to be ionized, for example xenon.
- Coaxially arranged at the other end of the plasma chamber is the extraction opening 16 provided for removing the plasma, including electrons.
- the as plasma chamber formed electrode 12a is partially formed by the keeper electrode 12b surround. The latter is additionally surrounded by a shield electrode 13. there also have the keeper electrode 12 b and the shield electrode 13 coaxial with the extraction opening 16 on the plasma chamber an opening to a removal of the plasma with electrons.
- the gas inlet 14 guided by the shield electrode 13.
- For electrical decoupling is the gas inlet 14 by means of an insulator 15 electrically from the electrodes 12a, 13th separated.
- the conductive regions in particular the electrode 12a designed as a plasma chamber, must fulfill further conditions in addition to their primary function of ensuring the electrostatic confinement of the electrons. On the one hand, it must be resistant to the plasma in order to outlast the required operating time with justifiable loss of quality; on the other hand, it must not shield the coupling of the electrical high-frequency field and the concomitant maintenance of the plasma. During operation, ions continuously strike the electrode 12a, resulting in erosion.
- the temperature of the high frequency electron source may be 300 ° C - 400 ° C. In space technology applications, there are also relatively stringent requirements for a high frequency electron source.
- the high frequency electron source as a neutralizer for ion engines in aerospace currently 8000 to 15000 hours of operation to guarantee.
- the high-frequency electron source is operated in a high vacuum, which means that the material - should not have outgassing - a low vapor pressure.
- the high-frequency electron source should survive the starting loads in transporting the device having such a high-frequency electron source into space.
- the conductive regions, in particular the electrode 12a are made of titanium, molybdenum, tungsten, steel, aluminum, tantalum, graphite, conductive ceramics or carbon composites.
- the discharge frequency is within wide limits freely selectable, so that instead of 1 MHz also values between 100 kHz to 50 MHz are possible.
- the electric high frequency field is above the Lead 21b a DC voltage to the keeper electrode 12b.
- the electron leakage from the discharge plasma can be facilitated and the efficiency the electron source can be improved.
- the supply lines 21a, 21b via further insulators 17 with respect to the shield electrode 13 and the Keeper electrode 12b shielded.
- the operating gas xenon flows via the gas inlet 14 in the discharge space 10.
- the electrode formed as a plasma chamber 12a and the keeper electrode 12b is applied to the high-frequency electric field. This is capacitively coupled into the discharge space 11. This will be the few free electrons that are in the working gas in thermal equilibrium are present, accelerate and thus ionize with sufficient energy from the high-frequency electric field, the operating gas. By this ionization In turn secondary electrons are generated, which participate in the process. It thus creates an electron avalanche, which ultimately leads to the plasma.
- the xenon gas jet exits to the outside.
- it is designed as a supersonic jet 30 (shaded outlined).
- the Gas jet 30 thus transports the high-frequency plasma to the outside.
- Through constant Replenishment of operating gas via the gas inlet is constantly new replenished ionizing gas, so that the system despite removal of a part of the plasma remains in equilibrium.
- FIG. 2 shows the high frequency electron source 10 with electrodes 12a and 12b, between which an alternating electric field is applied.
- the alternating field is located thereby perpendicular to the extraction direction of the electrons passing through a Plasmajet 30 exit.
- the discharge space is of a dielectric discharge chamber 19 electrically isolated from the electrodes 12a and 12b. to Supporting the extraction lies between the electrically isolated ones Auxiliary electrodes 18a and 18b to a DC voltage through the power supply 23 is generated.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
- Discharge Lamp (AREA)
- Particle Accelerators (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Abstract
Description
Die hierzu benötigten Elektronen werden aus einer Elektronenquelle bereitgestellt und mittels Plasmakopplung in den lonenstrahl eingebracht.
- Fig. 1
- einen schematischen Aufbau der erfindungsgemäßen HochfrequenzElektronenquelle in einer Ausgestaltung mit einer als Hohlkathode ausgebildeten Plasmakammer und Schirmelektrode.
- Fig. 2
- einen schematischen Aufbau in einer Ausgestaltung mit einer gegenüber den Elektroden elektrisch isolierten Plasmakammer.
Bei der Anwendung in der Raumfahrttechnik bestehen zudem relativ strenge Anforderungen an eine Hochfrequenz-Elektronenquelle . So sind für die Anwendung der Hochfrequenz-Elektronenquelle als Neutralisator für lonentriebwerke in der Raumfahrt derzeit 8000 bis 15000 Stunden Betriebszeit zu garantieren. Hinzu kommt, dass die Hochfrequenz-Elektronenquelle im Hochvakuum betrieben wird, womit der Werkstoff - um nicht auszugasen - einen niedrigen Dampfdruck aufweisen sollte. Letztlich sollte die Hochfrequenz-Elektronenquelle die Startlasten beim Transport der Einrichtung, die eine solche Hochfrequenz-Elektronenquelle aufweist, in den Weltraum überstehen. Hierfür gibt es insbesondere einige metallische und nichtmetallische Werkstoffe, die diesen Anforderungen gerecht werden, so dass die leitfähigen Bereiche, insbesondere die Elektrode 12a, aus Titan, Molybdän, Wolfram, Stahl, Aluminium, Tantal, Graphit, leitfähiger Keramik oder Kohlenstoffverbundwerkstoffen hergestellt ist.
Claims (14)
- Hochfrequenz-Elektronenquelle (10), insbesondere als Neutralisator einer lonenquelle, insbesondere eines lonenantriebs, umfassend einen Entladungsraum (11) mit mindestens einem Gaseinlass (14) für ein zu ionisierendes Gas und mindestens einer Extraktionsöffnung (16) für Elektronen, dadurch gekennzeichnet, dass der Entladungsraum (11) von mindestens einer Elektrode (12a) und einer Keeper-Elektrode (12b) zumindest teilweise umgeben ist und dass zwischen den Elektroden ein elektrisches Hochfrequenzfeld anliegt.
- Hochfrequenz-Elektronenquelle (10) nach Anspruch 1, dadurch gekennzeichnet, dass der Entladungsraum (11) von einer Plasmakammer umgeben ist.
- Hochfrequenz-Elektronenquelle (10) nach Anspruch 2, dadurch gekennzeichnet, dass die Plasmakammer als Elektrode (12a, 12b) ausgebildet ist.
- Hochfrequenz-Elektronenquelle (10) nach Anspruch 3, dadurch gekennzeichnet, dass die Elektrode(12a) als Hohlkathode ausgebildet ist.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche, dadurch gekennzeichnet, dass das elektrische Hochfrequenzfeld parallel zur Extraktionsrichtung der Elektronen angelegt wird.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche , dadurch gekennzeichnet, dass das elektrische Hochfrequenzfeld senkrecht zur Extraktionsrichtung der Elektronen angelegt wird.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche 2, dadurch gekennzeichnet, dass das elektrische Hochfrequenzfeld eine Frequenz von 100 KHz bis 50 MHz aufweist. Hochfrequenzfeld eine Frequenz von 100 KHz bis 50 MHz aufweist.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche, dadurch gekennzeichnet, dass ein Hochfrequenzgenerator, insbesondere ein Radiofrequenzgenerator (22) mit Anpassungsnetzwerk, insbesondere Ringkerntransformator (21) das elektrische Hochfrequenzfeld erzeugt.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche 3 bis 8, dadurch gekennzeichnet, dass die Keeper-Elektrode (12b) am aktiven Ausgang des Hochfrequenzgenerators (22) anliegt und die Elektrode (12a) Massepotential aufweist.
- Hochfrequenz-Elektronenquelle (10) nach Anspruch 9, dadurch gekennzeichnet, dass die Keeper-Elektrode (12b) von einer Schirmelektrode (13) umgeben ist.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der Ansprüche 3 bis 8, dadurch gekennzeichnet, dass die Elektrode (12a) am aktiven Ausgang des Hochfrequenzgenerators (21) anliegt und die Keeper-Elektrode (12b) Massepotential aufweist.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche, dadurch gekennzeichnet, dass zwischen der Elektrode (12a) und der Keeper-Elektrode (12b) zusätzlich zum elektrischen Hochfrequenzfeld eine Gleichspannung beaufschlagt ist.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche, dadurch gekennzeichnet, dass Hilfselektroden (18a, 18b) am Entladungsraum (11) angebracht sind, zwischen denen eine Gleichspannung anliegt.
- Hochfrequenz-Elektronenquelle (10) nach einem oder mehreren der vorangegangenen Ansprüche, dadurch gekennzeichnet, dass die Elektrode (12a) und/oder Keeper-Elektrode (12b) und/oder die Hilfselektroden (18a, 18b) aus einem metallischen Werkstoff der Gruppe Titan, Molybdän, Wolfram, Aluminium, Tantal, Stahl oder aus einem nichtmetallischen Werkstoff der Gruppe Graphit, Kohlenstoffverbundwerkstoff, Keramik bestehen.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10215660A DE10215660B4 (de) | 2002-04-09 | 2002-04-09 | Hochfrequenz-Elektronenquelle, insbesondere Neutralisator |
DE10215660 | 2002-04-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1353352A1 true EP1353352A1 (de) | 2003-10-15 |
EP1353352B1 EP1353352B1 (de) | 2010-08-25 |
Family
ID=28051229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03007602A Expired - Lifetime EP1353352B1 (de) | 2002-04-09 | 2003-04-02 | Hochfrequenz-Elektronenquelle, insbesondere Neutralisator |
Country Status (7)
Country | Link |
---|---|
US (1) | US6870321B2 (de) |
EP (1) | EP1353352B1 (de) |
JP (1) | JP4409846B2 (de) |
KR (1) | KR100876052B1 (de) |
AT (1) | ATE479196T1 (de) |
DE (2) | DE10215660B4 (de) |
RU (1) | RU2270491C2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7498592B2 (en) * | 2006-06-28 | 2009-03-03 | Wisconsin Alumni Research Foundation | Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams |
DE102007036592B4 (de) * | 2007-08-02 | 2014-07-10 | Astrium Gmbh | Hochfrequenzgenerator für Ionen- und Elektronenquellen |
JP4925132B2 (ja) * | 2007-09-13 | 2012-04-25 | 公立大学法人首都大学東京 | 荷電粒子放出装置およびイオンエンジン |
DE102007044070A1 (de) * | 2007-09-14 | 2009-04-02 | Thales Electron Devices Gmbh | Ionenbeschleunigeranordnung und dafür geeignete Hochspannungsisolatoranordnung |
CN102767497B (zh) * | 2012-05-22 | 2014-06-18 | 北京卫星环境工程研究所 | 基于空间原子氧的无燃料航天器推进系统及推进方法 |
CN102797656B (zh) * | 2012-08-03 | 2014-08-13 | 北京卫星环境工程研究所 | 吸气式螺旋波电推进装置 |
CN106672267B (zh) * | 2015-11-10 | 2018-11-27 | 北京卫星环境工程研究所 | 基于空间原子氧与物质相互作用的推进系统与方法 |
CN106941066B (zh) * | 2017-03-22 | 2018-07-06 | 中山市博顿光电科技有限公司 | 一种电离效果稳定的射频离子源中和器 |
GB2573570A (en) * | 2018-05-11 | 2019-11-13 | Univ Southampton | Hollow cathode apparatus |
CN108882495B (zh) * | 2018-06-08 | 2021-02-19 | 鲍铭 | 一种高频交流电场约束等离子体产生中子的方法 |
CN111734593B (zh) * | 2020-06-24 | 2023-01-31 | 电子科技大学 | 一种基于冷阴极的离子中和器 |
CN114302548B (zh) * | 2021-12-31 | 2023-07-25 | 中山市博顿光电科技有限公司 | 射频电离装置、射频中和器及其控制方法 |
Citations (6)
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US4335465A (en) * | 1978-02-02 | 1982-06-15 | Jens Christiansen | Method of producing an accellerating electrons and ions under application of voltage and arrangements connected therewith |
US4684848A (en) * | 1983-09-26 | 1987-08-04 | Kaufman & Robinson, Inc. | Broad-beam electron source |
US4954751A (en) * | 1986-03-12 | 1990-09-04 | Kaufman Harold R | Radio frequency hollow cathode |
US5003226A (en) | 1989-11-16 | 1991-03-26 | Avco Research Laboratories | Plasma cathode |
US5198718A (en) * | 1989-03-06 | 1993-03-30 | Nordiko Limited | Filamentless ion source for thin film processing and surface modification |
US6291940B1 (en) * | 2000-06-09 | 2001-09-18 | Applied Materials, Inc. | Blanker array for a multipixel electron source |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2633778C3 (de) * | 1976-07-28 | 1981-12-24 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Ionentriebwerk |
FR2480552A1 (fr) * | 1980-04-10 | 1981-10-16 | Anvar | Generateur de plasma |
JP2531134B2 (ja) * | 1986-02-12 | 1996-09-04 | 株式会社日立製作所 | プラズマ処理装置 |
DE69732055T2 (de) * | 1996-02-09 | 2005-06-02 | ULVAC, Inc., Chigasaki | Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch neutralen Linie |
JP3967050B2 (ja) * | 1999-10-25 | 2007-08-29 | 三菱電機株式会社 | プラズマ発生装置 |
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2002
- 2002-04-09 DE DE10215660A patent/DE10215660B4/de not_active Expired - Fee Related
-
2003
- 2003-04-02 EP EP03007602A patent/EP1353352B1/de not_active Expired - Lifetime
- 2003-04-02 AT AT03007602T patent/ATE479196T1/de active
- 2003-04-02 DE DE50313006T patent/DE50313006D1/de not_active Expired - Lifetime
- 2003-04-07 JP JP2003103276A patent/JP4409846B2/ja not_active Expired - Fee Related
- 2003-04-08 RU RU2003110016/28A patent/RU2270491C2/ru active
- 2003-04-08 KR KR1020030021789A patent/KR100876052B1/ko active IP Right Grant
- 2003-04-09 US US10/410,674 patent/US6870321B2/en not_active Expired - Lifetime
Patent Citations (6)
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US4335465A (en) * | 1978-02-02 | 1982-06-15 | Jens Christiansen | Method of producing an accellerating electrons and ions under application of voltage and arrangements connected therewith |
US4684848A (en) * | 1983-09-26 | 1987-08-04 | Kaufman & Robinson, Inc. | Broad-beam electron source |
US4954751A (en) * | 1986-03-12 | 1990-09-04 | Kaufman Harold R | Radio frequency hollow cathode |
US5198718A (en) * | 1989-03-06 | 1993-03-30 | Nordiko Limited | Filamentless ion source for thin film processing and surface modification |
US5003226A (en) | 1989-11-16 | 1991-03-26 | Avco Research Laboratories | Plasma cathode |
US6291940B1 (en) * | 2000-06-09 | 2001-09-18 | Applied Materials, Inc. | Blanker array for a multipixel electron source |
Also Published As
Publication number | Publication date |
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KR100876052B1 (ko) | 2008-12-26 |
ATE479196T1 (de) | 2010-09-15 |
EP1353352B1 (de) | 2010-08-25 |
KR20030081060A (ko) | 2003-10-17 |
DE10215660B4 (de) | 2008-01-17 |
JP2003301768A (ja) | 2003-10-24 |
US6870321B2 (en) | 2005-03-22 |
RU2270491C2 (ru) | 2006-02-20 |
DE50313006D1 (de) | 2010-10-07 |
US20030209961A1 (en) | 2003-11-13 |
DE10215660A1 (de) | 2003-11-06 |
JP4409846B2 (ja) | 2010-02-03 |
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