EP1346401A2 - Multi-layer pt electrode for dram and fram with high k dielectric materials - Google Patents
Multi-layer pt electrode for dram and fram with high k dielectric materialsInfo
- Publication number
- EP1346401A2 EP1346401A2 EP01995905A EP01995905A EP1346401A2 EP 1346401 A2 EP1346401 A2 EP 1346401A2 EP 01995905 A EP01995905 A EP 01995905A EP 01995905 A EP01995905 A EP 01995905A EP 1346401 A2 EP1346401 A2 EP 1346401A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductive
- layer
- liner
- electrode
- conductive liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003989 dielectric material Substances 0.000 title description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 23
- 229910004200 TaSiN Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 12
- 239000001301 oxygen Substances 0.000 abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 238000000059 patterning Methods 0.000 abstract description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 36
- 239000004020 conductor Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 or alternatively Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004201 TaSiNx Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/908—Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines
Definitions
- the present invention relates generally to the fabrication of integrated circuits (IC's), and more particularly to the fabrication of memory IC's.
- DRAM dynamic random access memory
- a DRAM typically includes millions or billions of individual DRAM cells, with each cell storing one bit of data.
- a DRAM memory cell typically includes an access field effect transistor (FET) and a storage capacitor. The access FET allows the transfer of data charges to and from the storage capacitor during reading and writing operations. In addition, the data charges on the storage capacitor are periodically refreshed during a refresh operation.
- FET access field effect transistor
- FRAM ferroelectric random access memory
- An FRAM typically has a similar structure to a DRAM but is comprised of materials such that the storage capacitor does not need to be refreshed continuously as in a DRAM.
- Common applications for FRAM' s include cellular phones and digital cameras, for example .
- a challenge in producing memory devices such as DRAM' s and FRAM' s is maintaining the minimum amount of charge that must be stored in a storage capacitor to obtain reliable operation of the memory device.
- One way to increase the capacitance density of memory devices is to use higher permittivity capacitance dielectric materials such as barium-strontium titanate (Ba,Sr)Ti0 3 (BSTO) .
- FIG. 1 Shown in Figure 1 is a cross-sectional view of a prior art DRAM stacked capacitor structure, with a storage capacitor 18 above a bit line contact 16 and connecting to underlying devices through polysilicon plugs 17.
- the capacitor structure 18 is built upon a substrate 12 which typically comprises polysilicon and may also include underlying semiconductor layers and structures.
- Word line 14 and bit line 16 provide an address array to enable the programming or charging, or reading of the capacitor 18 during use.
- Cell plate 28 overlies the high dielectric constant (k) material 26 which may comprise BSTO, for example.
- Bottom electrode 24 comprises platinum (Pt) overlying a conductive barrier layer 22. Pt is typically used because of its superior work function.
- the barrier layer 22 comprises a conductive material and is used to separate the electrode 24 from the plug material 20 to prevent electrode-plug interdiffusion and reaction. Barrier layer 22 also protects the plug 17 against oxygen exposure during the deposition of the BSTO dielectric 26, which typically occurs in a high temperature oxygen environment at temperatures in the range of 450 to 700°C.
- the high dielectric constant material 26 conformally coats the bottom electrode 24, and the counter-electrode forms a plate 28 that is common to an array of a plurality of capacitors 18.
- a problem with the stacked capacitor structure 18 using a high dielectric constant material 26 shown in Figure 1 is that upon deposition of the high dielectric constant material 26, oxygen diffuses through the platinum of electrode 24 to barrier layer 22, forming an oxide layer 30 between bottom electrode 24 and conductive barrier layer 22.
- Oxide layer 30 comprises an interfacial low dielectric layer between electrode 24 and barrier layer 22 and is typically about 15 nm thick.
- the formation of oxide layer 30 is problematic because the bottom electrode is required to be conductive.
- Oxide 30 typically comprises a non-conductive oxide such as such as TaSiN x O y , creating an open in the bottom electrode 24, or increasing the resistance of the bottom electrode 24.
- a similar oxide barrier layer may also form between Pt 24 and plug 17 during BSTO deposition if no barrier layer 22 is used.
- a multi-layer electrode in which a conductive barrier layer 122 is formed, and a layer of Iridium (Ir) 132 is deposited over barrier layer 122, as shown in Figure 2.
- Ir Iridium
- a relatively thick layer of Iridium oxide (Ir0 2 ) 134 is deposited over the Ir layer 132, as shown in Figure 2.
- Pt electrode material 124 is deposited over the Ir0 2 layer 134.
- the structure shown in Figure 2 is disadvantageous because the excessive thicknesses of the Ir layer 132 and Ir0 2 layer 134 do not permit the use of the same etchant gas as used to process the Pt material 124, for example. Therefore, several different etchant gases are required to pattern the electrode, requiring increased labor, time, and an increase in the number and variety of processing chemicals .
- the present invention achieves technical advantages as a multi-layer platinum electrode for use in memory devices having high dielectric constant materials.
- a multi-layer electrode stack having a thin conductive oxide layer to control the electrode texture prevents oxygen diffusion through the electrode.
- the thin conductive oxide layer is etchable with the same gases used to etch the conductive electrode materials.
- a multi-layer electrode for an integrated circuit including a conductive barrier layer, a first conductive liner deposited over the conductive barrier layer, a second conductive liner deposited over the first conductive liner, and a conductive layer deposited over the second conductive liner, where the conductive layer and the first conductive liner comprise the same material.
- a multi-layer electrode for an integrated circuit comprising a conductive barrier layer, a first conductive liner deposited over the conductive barrier layer, a second conductive liner comprising a conductive oxide deposited over the first conductive liner, and a conductive layer deposited over the second conductive liner.
- a method of fabricating an electrode of an integrated circuit comprising depositing a conductive barrier layer over a substrate, depositing a first conductive liner over the conductive barrier layer, depositing a second conductive liner over the first conductive liner, and depositing a conductive layer over the second conductive liner, where the conductive layer and the first conductive liner comprise the same material.
- Advantages of the invention include prohibiting oxygen diffusion through the multi-layer electrode to the barrier layer interface, preventing the formation of an oxide layer which can cause an open and increase the resistance of the electrode.
- Material variation is reduced during electrode patterning, for example, the same etchant gas may be used to pattern the conductive layer of the electrode and the first and second conductive liners.
- the method and structure described herein may be used and applied to a variety of memory integrated circuits, such as DRAM' s and FRAM' s .
- the columnar grain growth of Pt is stopped by the insertion of the conductive oxide layer between two Pt layers in accordance with the present invention.
- Figure 1 illustrates a cross-sectional view of a prior art DRAM stacked capacitor having a non-conductive oxide layer formed between the barrier layer and the bottom electrode;
- Figure 2 illustrates a cross-sectional diagram of a prior art multi-layer bottom electrode
- Figures 3-10 show cross-sectional views of a multi-layer electrode for a memory cell in accordance with the preferred embodiment of the present invention at various stages of fabrication;
- FIGS 11-15 show cross-sectional views of an alternate process flow for the process shown in Figures 6-10;
- Figure 16 illustrates a prior art grain structure of a bottom electrode
- Figure 17 illustrates a cross-sectional view of the grain structure of the electrode of the present 1 invention.
- Figures 3-14 show two preferred embodiments of the present multi-layer memory electrode invention in various stages of fabrication.
- Figure 3 shows a cross-sectional view of a semiconductor memory device having a workpiece 202.
- Workpiece 202 preferably comprises a semiconductor substrate such as silicon.
- other circuit components may reside within workpiece 202, although the top surface of the workpiece 202 preferably comprises an oxide such as silicon dioxide, for example.
- an insulating layer 204 is deposited over workpiece 202.
- Insulating layer 204 preferably comprises silicon dioxide (Si0 2 ) , and may alternatively comprise other dielectric materials.
- Insulating layer 204 is patterned and etched to form trenches 205, as shown. Trenches 205 represent areas where conductive vias will be formed in subsequent processing steps .
- Conductive layer 206 preferably comprises poly-crystalline silicon (polysilicon) , and may comprise other conductive materials suitable to electrically couple the bottom electrode to a word or bit line contact beneath the structure shown (similar to the structure shown in Figure 1) .
- the wafer is exposed to a chemical -mechanical polish (CMP) to expose insulating layer 204, as shown in Figure 5.
- CMP chemical -mechanical polish
- the first process forms a recessed structure, which process flow is shown in Figures 6 - 10
- the second process forms a non-recessed structure, which process flow is shown in Figures 11 - 15.
- the conductive material 206 is etched to remove a portion of the polysilicon from the top of the trench 205 and leave a recess, shown in Figure 6.
- Three liners 222, 240, 242 and a conductive layer 224 are deposited with an in situ deposition, shown in Figure 7.
- a conductive barrier layer 222 is deposited over insulating layer 204 and polysilicon material 206 in the trench.
- Conductive barrier layer 222 preferably comprises TaSiN, for example, and may alternatively comprise other conductive materials.
- conductive barrier layer 222 comprises 15-500 Angstroms of TaSiN, and more preferably comprises 100-300 Angstroms of TaSiN.
- a first conductive liner 240 is deposited over conductive barrier layer 222.
- First conductive liner 240 preferably comprises Pt, and may alternatively comprise other conductive materials such as Ir, Ru, Pd or combinations thereof, for example.
- First conductive liner 240 preferably comprises the same material as the material to be subsequently deposited for conductive layer 224.
- the first conductive liner 240 comprises 100-500 Angstroms of Pt , and more preferably comprises 200 Angstroms of Pt .
- a second conductive liner 242 is deposited over the first conductive liner 240.
- Second conductive liner 242 preferably comprises a conductive oxide such as Iridium oxide (Ir0 2 ) , or alternatively, Ruthenium oxide (Ru0 2 ) , for example.
- the second conductive liner 242 comprises 20-500 Angstroms of conductive oxide, and more preferably comprises 20-50 Angstroms of conductive oxide.
- Conductive layer 224 preferably comprises Pt, and may alternatively comprise other conductive materials such as Ir, Ru, Pd or combinations thereof, for example.
- conductive material 224 comprises 1500- 3500 Angstroms of Pt, and more preferably comprises 2200 Angstroms of Pt .
- the wafer is exposed to a CMP process to expose insulating layer 204 around the multi-layer electrode, as shown in Figure 8. Because the second conductive liner 242 is thin, the conductive layer 224 can be deposited filling into the recess. The interface between the conductive layer 224 and the second conductive liner 242 will not be exposed during the CMP. This will prevent the surface of second conductive liner 242 from the contamination and therefore increase the adhesion of the conductive layer 224 on the second conductive liner 242.
- Conductive layer 244 is deposited, as shown in Figure 9.
- conductive layer 244 comprises Pt and alternatively may comprise other conductive materials such as Ir, Ru, Pd or combinations thereof, for example.
- Layer 244 and 224 preferably comprise the same material and are essentially homogenous, and thus, they are shown as one layer 244 in subsequent figures.
- the conductive material 244 is patterned and etched to form a conductive region 244, as shown in Figure 10.
- conductive layers, 322, 340, 342, and 344 are deposited on planarized polysilicon 206 and silicon oxide 204, shown in Figure 11.
- a conductive barrier layer 222 is deposited over planarized conductive material 206 and insulating layer 204.
- Conductive barrier layer 322 preferably comprises TaSiN, for example, and may alternatively comprise other conductive materials.
- conductive barrier layer 322 comprises 15-500 Angstroms of TaSiN, and more preferably comprises 100- 300 Angstroms of TaSiN.
- a first conductive liner 340 is deposited over conductive barrier layer 322.
- First conductive liner 340 preferably comprises Pt, and may alternatively comprise other conductive materials such as Ir, Ru, Pd or combinations thereof, for example.
- First conductive liner 340 preferably comprises the same material as the material to be subsequently deposited for conductive layer 324.
- the first conductive liner 340 comprises 100-500 Angstroms of Pt, and more preferably comprises 200 Angstroms of Pt .
- a second conductive liner 342 is deposited over the first conductive liner 340.
- Second conductive liner 342 preferably comprises a conductive oxide such as Ir0 2 , or alternatively, Ru0 2 , for example.
- the second conductive liner 342 comprises 20-500 Angstroms of conductive oxide, and more preferably comprises 20-50 Angstroms of conductive oxide.
- Conductive layer 324 preferably comprises Pt , and may alternatively comprise other conductive materials such as Ir, Ru, Pd or combinations thereof, for example.
- conductive material 324 comprises 1500- 3500 Angstroms of Pt, and more preferably comprises 2200 Angstroms of Pt .
- the four conductive four conductive layers, 322, 340, 342, and 344 are patterned, for example, by RIE, as shown in Figure 12. Because the second conductive liner 342 is thin, the same etchant gas may be used to etch second conductive layer 342 as used to etch conductive materials 344 and 340.
- An insulator layer 348 comprising a dielectric such as Si0 2 , is deposited on the patterned conductive layers 322, 340, 342, and 344, as shown in Figure 13.
- the wafer is planarized, for example, by CMP, shown in Figure 14 and the insulator layer 348 is etched back to a height such that insulator layer 348 will cover the interface of conductive layer 344 and second conductive layer 342, as shown in Figure 15.
- Barrier layer 222/322, first conductive liner 240/340, second conductive layer liner 242/340, and conductive region 244/344 comprise a multi-layer electrode 246/346 stack in accordance with the present invention.
- the thin second conductive stack liner 242/342 controls the electrode conductive layer 244/344 texture, preventing oxygen diffusion through to the barrier layer 222/322.
- Figure 16 illustrates a cross-sectional view of a prior art Pt electrode 24 overlying a barrier layer 22.
- PVD physical vapor deposition
- the Pt has a columnar grain structure, as shown. Columns 38 permit diffusion of oxygen through the grain boundary of Pt 24 to barrier layer 22, which can form an oxide layer and create an open or increase the resistance of the electrode.
- Figure 17 shows the molecular grain structure of the present invention having a conductive oxide layer 242 sandwiched between two Pt layers 244 and 240.
- the columns 238 of the top Pt layer 244 do not coincide with the columns 239 of the lower Pt 240 layer, reducing oxygen diffusion from the top surface to the barrier layer 222.
- the disconnected grain structure provided by the thin layer of conductive oxide 242 prevents the formation of a non-conductive oxide between the conductive layer 244 and barrier layer 222.
- the present multi-layer electrode invention provides several advantages over prior art electrodes for memory semiconductors.
- the multi-layer electrode 246/346 of the present invention prohibits oxygen diffusion through the electrode to the barrier layer 222/322 interface, preventing the formation of an oxide layer which can cause opens in and increase the resistance of the electrode 246/346.
- Material variation is reduced during the electrode patterning, resulting in the same etchant gas being able to be used to pattern the Pt electrode conductive layer 244/344 and the first and second conductive liners 240/340 and 242/342.
- the method and structure described herein may be used and applied to a variety of structures, such as DRAM's, FRAM's, and other integrated circuit applications where oxygen diffusion is undesired, for example.
- the columnar grain growth of Pt is stopped by the insertion of the thin conductive oxide layer 242/342 between the two Pt layers 222/342 and 244/344 in accordance with the present invention.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/751,551 US6794705B2 (en) | 2000-12-28 | 2000-12-28 | Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials |
US751551 | 2000-12-28 | ||
PCT/US2001/043904 WO2002054457A2 (en) | 2000-12-28 | 2001-11-14 | Multi-layer pt electrode for dram and fram with high k dielectric materials |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1346401A2 true EP1346401A2 (en) | 2003-09-24 |
Family
ID=25022506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01995905A Withdrawn EP1346401A2 (en) | 2000-12-28 | 2001-11-14 | Multi-layer pt electrode for dram and fram with high k dielectric materials |
Country Status (3)
Country | Link |
---|---|
US (3) | US6794705B2 (en) |
EP (1) | EP1346401A2 (en) |
WO (1) | WO2002054457A2 (en) |
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US6596580B2 (en) * | 2001-10-18 | 2003-07-22 | Infineon Technologies Ag | Recess Pt structure for high k stacked capacitor in DRAM and FRAM, and the method to form this structure |
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US20060151845A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | Method to control interfacial properties for capacitors using a metal flash layer |
US20060151822A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | DRAM with high K dielectric storage capacitor and method of making the same |
US7316962B2 (en) * | 2005-01-07 | 2008-01-08 | Infineon Technologies Ag | High dielectric constant materials |
KR100755373B1 (en) * | 2006-09-15 | 2007-09-04 | 삼성전자주식회사 | Contact structure having conductive oxide, ferroelectric random access memory device employing the same and methods of fabricating the same |
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JP2010118595A (en) * | 2008-11-14 | 2010-05-27 | Toshiba Corp | Semiconductor device |
US8847196B2 (en) | 2011-05-17 | 2014-09-30 | Micron Technology, Inc. | Resistive memory cell |
CN108123031B (en) * | 2016-11-30 | 2021-12-28 | 中芯国际集成电路制造(上海)有限公司 | Resistance variable memory and manufacturing method thereof |
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2004
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2008
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US6794705B2 (en) | 2004-09-21 |
WO2002054457A3 (en) | 2003-04-03 |
US20080108203A1 (en) | 2008-05-08 |
WO2002054457A2 (en) | 2002-07-11 |
US20020084481A1 (en) | 2002-07-04 |
US20050023590A1 (en) | 2005-02-03 |
US7319270B2 (en) | 2008-01-15 |
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