EP1301764A1 - Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge - Google Patents

Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge

Info

Publication number
EP1301764A1
EP1301764A1 EP01949572A EP01949572A EP1301764A1 EP 1301764 A1 EP1301764 A1 EP 1301764A1 EP 01949572 A EP01949572 A EP 01949572A EP 01949572 A EP01949572 A EP 01949572A EP 1301764 A1 EP1301764 A1 EP 1301764A1
Authority
EP
European Patent Office
Prior art keywords
sample
optical system
type
detector
focusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP01949572A
Other languages
German (de)
English (en)
French (fr)
Inventor
Jean-Louis Stehle
Pierre Boher
Michel Luttmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe de Commercialisation des Produits de la Recherche Appliquee SOCPRA
Production Et De Recherches Appliquees Ste
Original Assignee
Societe de Commercialisation des Produits de la Recherche Appliquee SOCPRA
Production Et De Recherches Appliquees Ste
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe de Commercialisation des Produits de la Recherche Appliquee SOCPRA, Production Et De Recherches Appliquees Ste filed Critical Societe de Commercialisation des Produits de la Recherche Appliquee SOCPRA
Publication of EP1301764A1 publication Critical patent/EP1301764A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

Definitions

  • the invention relates to the field of ellipsometry, and more particularly to ellipsometry operating in one infrared.
  • Ellipsometric measurements can be performed at a fixed wavelength (monochromatic ellipsometry), or at several wavelengths (spectroscopic ellipsometry).
  • infrared is generally better suited than visible to access the volume properties of layers and materials.
  • an infrared ellipsometer includes:
  • - a sample holder, intended to carry a sample of given thickness, and comprising a front face and a rear face; - a detector;
  • a first optical system mounted between the source and the sample holder, and comprising a polarizer and a focusing device, in order to illuminate the sample placed on the sample holder under oblique incidence by a beam of polarized light;
  • a second optical system mounted between the sample holder and the detector and comprising a focusing device and an analyzer, to collect the light returned by the sample.
  • the rear face of the sample can disturb the ellipsometry measurements by reflecting parasitic radiation which pollutes the detection and processing of the useful signal.
  • Another known solution consists in taking absorbent samples (that is to say non-transparent samples, such as heavily doped silicon), but this also limits the application of such a solution.
  • the aim of the present invention is to remedy these drawbacks and precisely proposes an ellipsometer with high spatial resolution operating in infrared in which parasitic reflections due to the rear face of the sample are overcome.
  • the present invention relates to an ellipsometer device of the type comprising:
  • sample holder intended to carry a transparent or semi-transparent sample of given thickness, and comprising a front face and a rear face;
  • a first optical system mounted between the source and the sample holder, and comprising a polarizer and a focusing device, in order to illuminate the sample placed on the sample holder, under oblique incidence by a beam of polarized light; and - a second optical system mounted between the sample holder and the detector and comprising a focusing device and an analyzer, to collect the light returned by the sample.
  • the ellipsometer device further comprises a blocking device, mounted on the reflection path in the focal plane of the focusing device of the second optical system, and capable of blocking parasitic radiation from the rear face of the sample and allow the useful radiation from the front face of the sample to pass to the detector, which makes it possible to obtain a separating power with respect to the front and rear faces of the sample.
  • a blocking device mounted on the reflection path in the focal plane of the focusing device of the second optical system, and capable of blocking parasitic radiation from the rear face of the sample and allow the useful radiation from the front face of the sample to pass to the detector, which makes it possible to obtain a separating power with respect to the front and rear faces of the sample.
  • the blocking device is of the slot type with adjustable dimension, knife with adjustable edge, or the like.
  • the ellipsometer device further comprises a widening device mounted on the illumination path and able to widen the illumination beam on the focusing device of the first system and widening the reflection beam on the focusing device of the second optical system.
  • the widening device is of the slit type with adjustable dimension, knife with adjustable edge, divergent lens, or the like.
  • the digital aperture of the focusing device of the first optical system is chosen to obtain a small beam of illumination on the sample.
  • the size of the illumination beam on the sample is less than 40 microns x 40 microns in the case of a light source of the laser type.
  • the focusing device of the first optical system as well as of the second optical system comprises at least at least one optical element belonging to the group formed by concave mirrors (for example elliptical, parabolic, spherical, etc.).
  • the digital aperture of the focusing device of the second optical system is chosen to separate the beams reflected by the front and rear faces of the sample.
  • the ellipsometer device further comprises a device for selecting the angle of incidence, mounted on the reflection path downstream of the blocking device according to the direction of propagation of the light, and able to select, for measurements by the detector, only the radiation reflected by the sample under oblique incidence within a predetermined angle of incidence range.
  • the selector device is of the slit type with adjustable dimension, knife with adjustable edge, or the like.
  • the light source is of the laser type, operating at terahertz frequencies, or a source with silicon carbide, filament, plasma, or the like.
  • the polarizer of the first optical system is of the grid type, with or without a rotary compensator, mounting with several polarizers with grids or the like.
  • the analyzer of the second optical system is of the grid polarizer type, with or without a rotary compensator, mounting with two grid polarizers or the like.
  • the detector is of the Mercury-Cadmium and / or Tellurium cell type, liquid nitrogen or the like.
  • sample holder is of the movable XYZ and / or rotating table type, suspended sample holder or the like.
  • FIG. 1 is a general diagram of an ellipsometer operating in the infrared according to the invention.
  • FIG. 2 shows the separating power of the blocking device according to the invention depending on its position relative to the light beams.
  • a light source S provides radiation in the infrared spectrum.
  • the source S is of the silicon carbide type at 1200 ° K. Its spectral range is from 1.44 to 18 microns.
  • the light source is of the laser type operating at terahertz, filament, plasma or similar frequencies.
  • the illumination system includes a Michelson-type interferometer mounted after the source and before the polarizer to scan the spectral range of the device.
  • a PE sample holder is intended to carry an ECH sample of given thickness, and comprising a front face FAV and a rear face FAR.
  • the sample is for example a silicon substrate with a thickness of the order of 400 to 700 microns.
  • the sample holder can be a mobile table in XYZ and / or mobile in rotation.
  • the sample holder can also be a suspended sample holder.
  • a first optical system comprising a polarizer P and a focusing device Ml. This first optical system makes it possible to illuminate the ECH sample placed on the PE sample holder, under oblique incidence by a beam of polarized light.
  • a widening device FI is mounted on the illumination path. It can be placed upstream or downstream of the polarizer depending on the direction of light propagation. This widening device widens the illumination beam on the mirror M1.
  • the widening device F1 is of the slot type with adjustable dimension, knife with adjustable edge, divergent lens, or the like.
  • the digital aperture of the mirror M1 is chosen to obtain a small illumination beam on the sample.
  • the size of the illumination beam on the sample is less than 40 microns x 40 microns in the context of a laser source.
  • the mirror M1 which constitutes the focusing device of the first optical system is an elliptical mirror.
  • this element M1 can be a parabolic, spherical mirror, a lens or even a dioptric, catadioptric or similar optic.
  • the polarizer P is of the grid polarizer type with or without a rotary compensator. As a variant, this polarizer may comprise an assembly with two grid polarizers or the like.
  • a second optical system is mounted between the sample holder PE and a detector D. This second optical system comprises a focusing device M2 and an analyzer A to collect the light returned by the sample.
  • the digital aperture of the focusing device M2 of the second optical system is chosen to separate the beams reflected by the front faces FAV and rear FAR of the sample.
  • the focusing device of the second optical system M2 comprises an optical element belonging to the group formed by concave mirrors (elliptical, parabolic or spherical), lenses and dioptric or catadioptric optics and the like.
  • the effective digital aperture of the focusing device M2 of the second optical system is of the order of 2.5 °.
  • the analyzer A of the optical system is of the grid polarizer type with or without a rotary compensator, mounting with two grid polarizers or the like. This analyzer A is placed on the reflection path downstream from the second mirror M2.
  • Detector D is of the Mercury-Cadmium-Tellurium cell type, liquid nitrogen or the like.
  • the detector is compatible with infrared operation.
  • the mirror M3 can be of the same type as that of the mirror M2.
  • a device for selecting the angle of incidence F3 is coupled to the mirror M3.
  • This selector device F3 makes it possible to select, for the measurements by the detector D, only the radiation reflected by the sample under oblique incidence within a predetermined incidence angle range.
  • the selector device F3 is of the slit type with adjustable dimension, knife with adjustable edge or the like.
  • a blocking device F2 mounted on the reflection path in the focal plane of the focusing device M2 of the second optical system.
  • This blocking device F2 is capable of blocking parasitic radiation RP from the rear face FAR of the sample and letting the useful radiation RU pass from the front face FAV of the sample to the detector D.
  • Such a blocking device F2 makes it possible to obtain a separating power with respect to the front and rear faces FAV and FAR of the sample.
  • the blocking device F2 is of the slot type with adjustable dimension, knife with adjustable edge or the like.
  • the selector device F3 is advantageously positioned in front of the mirror M3 because if it were placed in front of the mirror M2, the diffractions due to the selector device F3 would be such as to degrade the separating power of the blocking device according to the invention.
  • an optical fiber is placed between the source S and the first optical system P.
  • another optical fiber is placed between the second optical system M3 and the detector D.
  • FIG. 2 represents curves of intensity C1 and of derivative of intensity C2 of the beam as a function of the position of the knife F2 relative to the normal of the beam.
  • Curves C1 and C2 show the effective separation of the beams due to the front face and to the rear face of the sample.
  • the Applicant has observed that by using an ellipsometer according to the diagram as described with reference to FIG. 1, the ellipsometer has a separating power with respect to the front and rear faces of the sample, the value of which is entirely satisfactory for carrying out infrared ellipsometry measurements on semiconductor materials such as silicon.
  • the separating power is of the order of 400 microns with a light source of wavelength of the order of 12 microns, a silicon substrate with a thickness of the order of 500 microns, a mirror Ml d effective digital opening of 2.5 °, a mirror M2 of effective digital opening of the order of 2.5 °, and an image of the slit F1 of the order of 300 microns.
  • the implementation of the invention here depends on the size of the spot, the quality of the optics, the thickness of the silicon substrate and the angle of incidence.
  • the separating power of the blocking device is of the order of 600 microns, with a mirror M2 with a magnification factor of 4.21.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Spectrometry And Color Measurement (AREA)
EP01949572A 2000-07-17 2001-06-28 Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge Ceased EP1301764A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0009318 2000-07-17
FR0009318A FR2811761B1 (fr) 2000-07-17 2000-07-17 Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge
PCT/FR2001/002072 WO2002006780A1 (fr) 2000-07-17 2001-06-28 Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge

Publications (1)

Publication Number Publication Date
EP1301764A1 true EP1301764A1 (fr) 2003-04-16

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Application Number Title Priority Date Filing Date
EP01949572A Ceased EP1301764A1 (fr) 2000-07-17 2001-06-28 Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge
EP01954108A Ceased EP1301763A2 (fr) 2000-07-17 2001-07-16 Ellipsometre spectroscopique compact

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP01954108A Ceased EP1301763A2 (fr) 2000-07-17 2001-07-16 Ellipsometre spectroscopique compact

Country Status (7)

Country Link
US (2) US6819423B2 (ja)
EP (2) EP1301764A1 (ja)
JP (2) JP2004504591A (ja)
KR (2) KR100846474B1 (ja)
AU (2) AU2001270701A1 (ja)
FR (1) FR2811761B1 (ja)
WO (2) WO2002006780A1 (ja)

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Also Published As

Publication number Publication date
KR100846474B1 (ko) 2008-07-17
EP1301763A2 (fr) 2003-04-16
FR2811761B1 (fr) 2002-10-11
KR20030022292A (ko) 2003-03-15
US20040070760A1 (en) 2004-04-15
US20040027571A1 (en) 2004-02-12
AU2001276456A1 (en) 2002-01-30
WO2002006780A1 (fr) 2002-01-24
JP2004504590A (ja) 2004-02-12
US7230701B2 (en) 2007-06-12
US6819423B2 (en) 2004-11-16
KR20030026322A (ko) 2003-03-31
AU2001270701A1 (en) 2002-01-30
FR2811761A1 (fr) 2002-01-18
JP2004504591A (ja) 2004-02-12
WO2002006779A3 (fr) 2002-03-28
WO2002006779A2 (fr) 2002-01-24

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