EP1301764A1 - Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge - Google Patents
Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarougeInfo
- Publication number
- EP1301764A1 EP1301764A1 EP01949572A EP01949572A EP1301764A1 EP 1301764 A1 EP1301764 A1 EP 1301764A1 EP 01949572 A EP01949572 A EP 01949572A EP 01949572 A EP01949572 A EP 01949572A EP 1301764 A1 EP1301764 A1 EP 1301764A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- sample
- optical system
- type
- detector
- focusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 46
- 230000005855 radiation Effects 0.000 claims abstract description 20
- 230000000903 blocking effect Effects 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000003071 parasitic effect Effects 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 244000045947 parasite Species 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000572 ellipsometry Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/04—Polarimeters using electric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
Definitions
- the invention relates to the field of ellipsometry, and more particularly to ellipsometry operating in one infrared.
- Ellipsometric measurements can be performed at a fixed wavelength (monochromatic ellipsometry), or at several wavelengths (spectroscopic ellipsometry).
- infrared is generally better suited than visible to access the volume properties of layers and materials.
- an infrared ellipsometer includes:
- - a sample holder, intended to carry a sample of given thickness, and comprising a front face and a rear face; - a detector;
- a first optical system mounted between the source and the sample holder, and comprising a polarizer and a focusing device, in order to illuminate the sample placed on the sample holder under oblique incidence by a beam of polarized light;
- a second optical system mounted between the sample holder and the detector and comprising a focusing device and an analyzer, to collect the light returned by the sample.
- the rear face of the sample can disturb the ellipsometry measurements by reflecting parasitic radiation which pollutes the detection and processing of the useful signal.
- Another known solution consists in taking absorbent samples (that is to say non-transparent samples, such as heavily doped silicon), but this also limits the application of such a solution.
- the aim of the present invention is to remedy these drawbacks and precisely proposes an ellipsometer with high spatial resolution operating in infrared in which parasitic reflections due to the rear face of the sample are overcome.
- the present invention relates to an ellipsometer device of the type comprising:
- sample holder intended to carry a transparent or semi-transparent sample of given thickness, and comprising a front face and a rear face;
- a first optical system mounted between the source and the sample holder, and comprising a polarizer and a focusing device, in order to illuminate the sample placed on the sample holder, under oblique incidence by a beam of polarized light; and - a second optical system mounted between the sample holder and the detector and comprising a focusing device and an analyzer, to collect the light returned by the sample.
- the ellipsometer device further comprises a blocking device, mounted on the reflection path in the focal plane of the focusing device of the second optical system, and capable of blocking parasitic radiation from the rear face of the sample and allow the useful radiation from the front face of the sample to pass to the detector, which makes it possible to obtain a separating power with respect to the front and rear faces of the sample.
- a blocking device mounted on the reflection path in the focal plane of the focusing device of the second optical system, and capable of blocking parasitic radiation from the rear face of the sample and allow the useful radiation from the front face of the sample to pass to the detector, which makes it possible to obtain a separating power with respect to the front and rear faces of the sample.
- the blocking device is of the slot type with adjustable dimension, knife with adjustable edge, or the like.
- the ellipsometer device further comprises a widening device mounted on the illumination path and able to widen the illumination beam on the focusing device of the first system and widening the reflection beam on the focusing device of the second optical system.
- the widening device is of the slit type with adjustable dimension, knife with adjustable edge, divergent lens, or the like.
- the digital aperture of the focusing device of the first optical system is chosen to obtain a small beam of illumination on the sample.
- the size of the illumination beam on the sample is less than 40 microns x 40 microns in the case of a light source of the laser type.
- the focusing device of the first optical system as well as of the second optical system comprises at least at least one optical element belonging to the group formed by concave mirrors (for example elliptical, parabolic, spherical, etc.).
- the digital aperture of the focusing device of the second optical system is chosen to separate the beams reflected by the front and rear faces of the sample.
- the ellipsometer device further comprises a device for selecting the angle of incidence, mounted on the reflection path downstream of the blocking device according to the direction of propagation of the light, and able to select, for measurements by the detector, only the radiation reflected by the sample under oblique incidence within a predetermined angle of incidence range.
- the selector device is of the slit type with adjustable dimension, knife with adjustable edge, or the like.
- the light source is of the laser type, operating at terahertz frequencies, or a source with silicon carbide, filament, plasma, or the like.
- the polarizer of the first optical system is of the grid type, with or without a rotary compensator, mounting with several polarizers with grids or the like.
- the analyzer of the second optical system is of the grid polarizer type, with or without a rotary compensator, mounting with two grid polarizers or the like.
- the detector is of the Mercury-Cadmium and / or Tellurium cell type, liquid nitrogen or the like.
- sample holder is of the movable XYZ and / or rotating table type, suspended sample holder or the like.
- FIG. 1 is a general diagram of an ellipsometer operating in the infrared according to the invention.
- FIG. 2 shows the separating power of the blocking device according to the invention depending on its position relative to the light beams.
- a light source S provides radiation in the infrared spectrum.
- the source S is of the silicon carbide type at 1200 ° K. Its spectral range is from 1.44 to 18 microns.
- the light source is of the laser type operating at terahertz, filament, plasma or similar frequencies.
- the illumination system includes a Michelson-type interferometer mounted after the source and before the polarizer to scan the spectral range of the device.
- a PE sample holder is intended to carry an ECH sample of given thickness, and comprising a front face FAV and a rear face FAR.
- the sample is for example a silicon substrate with a thickness of the order of 400 to 700 microns.
- the sample holder can be a mobile table in XYZ and / or mobile in rotation.
- the sample holder can also be a suspended sample holder.
- a first optical system comprising a polarizer P and a focusing device Ml. This first optical system makes it possible to illuminate the ECH sample placed on the PE sample holder, under oblique incidence by a beam of polarized light.
- a widening device FI is mounted on the illumination path. It can be placed upstream or downstream of the polarizer depending on the direction of light propagation. This widening device widens the illumination beam on the mirror M1.
- the widening device F1 is of the slot type with adjustable dimension, knife with adjustable edge, divergent lens, or the like.
- the digital aperture of the mirror M1 is chosen to obtain a small illumination beam on the sample.
- the size of the illumination beam on the sample is less than 40 microns x 40 microns in the context of a laser source.
- the mirror M1 which constitutes the focusing device of the first optical system is an elliptical mirror.
- this element M1 can be a parabolic, spherical mirror, a lens or even a dioptric, catadioptric or similar optic.
- the polarizer P is of the grid polarizer type with or without a rotary compensator. As a variant, this polarizer may comprise an assembly with two grid polarizers or the like.
- a second optical system is mounted between the sample holder PE and a detector D. This second optical system comprises a focusing device M2 and an analyzer A to collect the light returned by the sample.
- the digital aperture of the focusing device M2 of the second optical system is chosen to separate the beams reflected by the front faces FAV and rear FAR of the sample.
- the focusing device of the second optical system M2 comprises an optical element belonging to the group formed by concave mirrors (elliptical, parabolic or spherical), lenses and dioptric or catadioptric optics and the like.
- the effective digital aperture of the focusing device M2 of the second optical system is of the order of 2.5 °.
- the analyzer A of the optical system is of the grid polarizer type with or without a rotary compensator, mounting with two grid polarizers or the like. This analyzer A is placed on the reflection path downstream from the second mirror M2.
- Detector D is of the Mercury-Cadmium-Tellurium cell type, liquid nitrogen or the like.
- the detector is compatible with infrared operation.
- the mirror M3 can be of the same type as that of the mirror M2.
- a device for selecting the angle of incidence F3 is coupled to the mirror M3.
- This selector device F3 makes it possible to select, for the measurements by the detector D, only the radiation reflected by the sample under oblique incidence within a predetermined incidence angle range.
- the selector device F3 is of the slit type with adjustable dimension, knife with adjustable edge or the like.
- a blocking device F2 mounted on the reflection path in the focal plane of the focusing device M2 of the second optical system.
- This blocking device F2 is capable of blocking parasitic radiation RP from the rear face FAR of the sample and letting the useful radiation RU pass from the front face FAV of the sample to the detector D.
- Such a blocking device F2 makes it possible to obtain a separating power with respect to the front and rear faces FAV and FAR of the sample.
- the blocking device F2 is of the slot type with adjustable dimension, knife with adjustable edge or the like.
- the selector device F3 is advantageously positioned in front of the mirror M3 because if it were placed in front of the mirror M2, the diffractions due to the selector device F3 would be such as to degrade the separating power of the blocking device according to the invention.
- an optical fiber is placed between the source S and the first optical system P.
- another optical fiber is placed between the second optical system M3 and the detector D.
- FIG. 2 represents curves of intensity C1 and of derivative of intensity C2 of the beam as a function of the position of the knife F2 relative to the normal of the beam.
- Curves C1 and C2 show the effective separation of the beams due to the front face and to the rear face of the sample.
- the Applicant has observed that by using an ellipsometer according to the diagram as described with reference to FIG. 1, the ellipsometer has a separating power with respect to the front and rear faces of the sample, the value of which is entirely satisfactory for carrying out infrared ellipsometry measurements on semiconductor materials such as silicon.
- the separating power is of the order of 400 microns with a light source of wavelength of the order of 12 microns, a silicon substrate with a thickness of the order of 500 microns, a mirror Ml d effective digital opening of 2.5 °, a mirror M2 of effective digital opening of the order of 2.5 °, and an image of the slit F1 of the order of 300 microns.
- the implementation of the invention here depends on the size of the spot, the quality of the optics, the thickness of the silicon substrate and the angle of incidence.
- the separating power of the blocking device is of the order of 600 microns, with a mirror M2 with a magnification factor of 4.21.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Spectrometry And Color Measurement (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0009318 | 2000-07-17 | ||
FR0009318A FR2811761B1 (fr) | 2000-07-17 | 2000-07-17 | Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge |
PCT/FR2001/002072 WO2002006780A1 (fr) | 2000-07-17 | 2001-06-28 | Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1301764A1 true EP1301764A1 (fr) | 2003-04-16 |
Family
ID=8852567
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01949572A Ceased EP1301764A1 (fr) | 2000-07-17 | 2001-06-28 | Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge |
EP01954108A Ceased EP1301763A2 (fr) | 2000-07-17 | 2001-07-16 | Ellipsometre spectroscopique compact |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01954108A Ceased EP1301763A2 (fr) | 2000-07-17 | 2001-07-16 | Ellipsometre spectroscopique compact |
Country Status (7)
Country | Link |
---|---|
US (2) | US6819423B2 (ja) |
EP (2) | EP1301764A1 (ja) |
JP (2) | JP2004504591A (ja) |
KR (2) | KR100846474B1 (ja) |
AU (2) | AU2001270701A1 (ja) |
FR (1) | FR2811761B1 (ja) |
WO (2) | WO2002006780A1 (ja) |
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DE102005062180B3 (de) * | 2005-12-23 | 2007-01-04 | Gesellschaft zur Förderung der Analytischen Wissenschaften e.V. | Infrarot-Ellipsometer |
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US8169611B2 (en) | 2009-02-27 | 2012-05-01 | University Of Nebraska Board Of Regents | Terahertz-infrared ellipsometer system, and method of use |
US8416408B1 (en) | 2009-02-27 | 2013-04-09 | J.A. Woollam Co., Inc. | Terahertz-infrared ellipsometer system, and method of use |
US8934096B2 (en) | 2009-02-27 | 2015-01-13 | University Of Nebraska Board Of Regents | Terahertz-infrared ellipsometer system, and method of use |
US8736838B2 (en) | 2009-02-27 | 2014-05-27 | J.A. Woollam Co., Inc. | Terahertz ellipsometer system, and method of use |
US8488119B2 (en) | 2009-02-27 | 2013-07-16 | J.A. Woollam Co., Inc. | Terahertz-infrared ellipsometer system, and method of use |
JP5650733B2 (ja) * | 2009-06-23 | 2015-01-07 | ジェイ・エイ・ウーラム・カンパニー・インコーポレイテッドJ.A.Woollam Co.,Inc. | テラヘルツ赤外線エリプソメーターシステムおよびその使用方法 |
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DE102011078418A1 (de) * | 2011-06-30 | 2013-01-03 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Vorrichtung und Verfahren zur Reflexions-Ellipsometrie im Millimeterwellenbereich |
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US10338362B1 (en) | 2014-06-06 | 2019-07-02 | J.A. Woollam Co., Inc. | Beam focusing and reflecting optics with enhanced detector system |
US9921395B1 (en) | 2015-06-09 | 2018-03-20 | J.A. Woollam Co., Inc. | Beam focusing and beam collecting optics with wavelength dependent filter element adjustment of beam area |
US9442016B2 (en) | 2014-06-06 | 2016-09-13 | J.A. Woollam Co., Inc | Reflective focusing optics |
KR102313345B1 (ko) | 2014-10-02 | 2021-10-15 | 삼성전자주식회사 | 광대역 광원 및 이를 구비하는 광학 검사장치 |
KR102016452B1 (ko) * | 2017-12-27 | 2019-08-30 | 한양대학교 에리카산학협력단 | 타원해석기 |
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- 2000-07-17 FR FR0009318A patent/FR2811761B1/fr not_active Expired - Fee Related
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2001
- 2001-06-28 KR KR1020037000770A patent/KR100846474B1/ko not_active IP Right Cessation
- 2001-06-28 AU AU2001270701A patent/AU2001270701A1/en not_active Abandoned
- 2001-06-28 WO PCT/FR2001/002072 patent/WO2002006780A1/fr active Application Filing
- 2001-06-28 EP EP01949572A patent/EP1301764A1/fr not_active Ceased
- 2001-06-28 US US10/333,416 patent/US6819423B2/en not_active Expired - Lifetime
- 2001-06-28 JP JP2002512641A patent/JP2004504591A/ja active Pending
- 2001-07-16 WO PCT/FR2001/002305 patent/WO2002006779A2/fr active Application Filing
- 2001-07-16 EP EP01954108A patent/EP1301763A2/fr not_active Ceased
- 2001-07-16 US US10/333,415 patent/US7230701B2/en not_active Expired - Fee Related
- 2001-07-16 AU AU2001276456A patent/AU2001276456A1/en not_active Abandoned
- 2001-07-16 KR KR10-2003-7000771A patent/KR20030026322A/ko not_active Application Discontinuation
- 2001-07-16 JP JP2002512640A patent/JP2004504590A/ja active Pending
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US5859424A (en) * | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
Non-Patent Citations (1)
Title |
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See also references of WO0206780A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR100846474B1 (ko) | 2008-07-17 |
EP1301763A2 (fr) | 2003-04-16 |
FR2811761B1 (fr) | 2002-10-11 |
KR20030022292A (ko) | 2003-03-15 |
US20040070760A1 (en) | 2004-04-15 |
US20040027571A1 (en) | 2004-02-12 |
AU2001276456A1 (en) | 2002-01-30 |
WO2002006780A1 (fr) | 2002-01-24 |
JP2004504590A (ja) | 2004-02-12 |
US7230701B2 (en) | 2007-06-12 |
US6819423B2 (en) | 2004-11-16 |
KR20030026322A (ko) | 2003-03-31 |
AU2001270701A1 (en) | 2002-01-30 |
FR2811761A1 (fr) | 2002-01-18 |
JP2004504591A (ja) | 2004-02-12 |
WO2002006779A3 (fr) | 2002-03-28 |
WO2002006779A2 (fr) | 2002-01-24 |
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