EP1271630A3 - Nitride compound based semiconductor device and manufacturing method of same - Google Patents

Nitride compound based semiconductor device and manufacturing method of same Download PDF

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Publication number
EP1271630A3
EP1271630A3 EP02100292A EP02100292A EP1271630A3 EP 1271630 A3 EP1271630 A3 EP 1271630A3 EP 02100292 A EP02100292 A EP 02100292A EP 02100292 A EP02100292 A EP 02100292A EP 1271630 A3 EP1271630 A3 EP 1271630A3
Authority
EP
European Patent Office
Prior art keywords
manufacturing
semiconductor device
based semiconductor
layer
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02100292A
Other languages
German (de)
French (fr)
Other versions
EP1271630A2 (en
EP1271630B1 (en
Inventor
Shiro Sakai
Yves Lacroix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitride Semiconductors Co Ltd
Original Assignee
Nitride Semiconductors Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitride Semiconductors Co Ltd filed Critical Nitride Semiconductors Co Ltd
Publication of EP1271630A2 publication Critical patent/EP1271630A2/en
Publication of EP1271630A3 publication Critical patent/EP1271630A3/en
Application granted granted Critical
Publication of EP1271630B1 publication Critical patent/EP1271630B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method for manufacturing a GaN-based semiconductor device in which an ohmic contact can be provided between the semiconductor layer and the electrode material. In a method for manufacturing wherein an n-GaN layer, an emissive layer, a p-GaN layer are formed on a substrate in that order; etching is performed to expose a portion of the n-GaN layer; and a negative electrode is formed on the n-GaN layer, the etching is performed in two sub-steps, an etching step using BCl3 gas and an etching step using Cl2 gas. The surface of the n-GaN layer is exposed in the first sub-step and the B (boron) contamination layer is removed in the second sub-step.
EP02100292A 2001-03-27 2002-03-25 Method for manufacturing a nitride compound based semiconductor device Expired - Lifetime EP1271630B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001090724A JP3520919B2 (en) 2001-03-27 2001-03-27 Method for manufacturing nitride semiconductor device
JP2001090724 2001-03-27

Publications (3)

Publication Number Publication Date
EP1271630A2 EP1271630A2 (en) 2003-01-02
EP1271630A3 true EP1271630A3 (en) 2005-10-12
EP1271630B1 EP1271630B1 (en) 2006-12-20

Family

ID=18945471

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02100292A Expired - Lifetime EP1271630B1 (en) 2001-03-27 2002-03-25 Method for manufacturing a nitride compound based semiconductor device

Country Status (6)

Country Link
US (1) US6610606B2 (en)
EP (1) EP1271630B1 (en)
JP (1) JP3520919B2 (en)
KR (1) KR100475714B1 (en)
DE (1) DE60216857T2 (en)
TW (1) TW530329B (en)

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EP1406314B1 (en) * 2001-07-12 2015-08-19 Nichia Corporation Semiconductor device
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
JP2005317684A (en) * 2004-04-27 2005-11-10 Eudyna Devices Inc Dry etching method and semiconductor device
JP4536568B2 (en) * 2005-03-31 2010-09-01 住友電工デバイス・イノベーション株式会社 Method for manufacturing FET
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
WO2011120955A1 (en) 2010-03-29 2011-10-06 Continental Teves Ag & Co. Ohg Brake system for motor vehicles
JP6151135B2 (en) * 2013-09-03 2017-06-21 株式会社東芝 Semiconductor device and manufacturing method thereof
CN103489887B (en) * 2013-09-14 2016-04-13 江苏新广联科技股份有限公司 For insulation system and the manufacturing process thereof of GaN base semi-conductor LED chips
EP2881982B1 (en) * 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6404890B2 (en) * 2016-11-24 2018-10-17 日機装株式会社 Manufacturing method of semiconductor light emitting device
JP6871550B2 (en) * 2017-03-10 2021-05-12 国立大学法人東海国立大学機構 Etching device

Citations (3)

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US5693180A (en) * 1995-04-25 1997-12-02 Sharp Kabushiki Kaisha Dry etching method for a gallium nitride type compound semiconductor
US5789265A (en) * 1995-08-31 1998-08-04 Kabushiki Kaisha Toshiba Method of manufacturing blue light-emitting device by using BCL3 and CL2
WO1998054757A1 (en) * 1997-05-26 1998-12-03 Siemens Aktiengesellschaft Method for etching iii-v semiconductor material

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US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
US5332697A (en) 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
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US5656832A (en) 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
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JP3744155B2 (en) 1997-11-07 2006-02-08 豊田合成株式会社 Method for manufacturing gallium nitride compound semiconductor substrate
JP3036495B2 (en) 1997-11-07 2000-04-24 豊田合成株式会社 Method for manufacturing gallium nitride-based compound semiconductor
JP4138930B2 (en) 1998-03-17 2008-08-27 富士通株式会社 Quantum semiconductor device and quantum semiconductor light emitting device
CN1284251C (en) 1998-05-08 2006-11-08 三星电子株式会社 Method for activating compound semiconductor layer and making it into p-type compound seiconductor layer
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693180A (en) * 1995-04-25 1997-12-02 Sharp Kabushiki Kaisha Dry etching method for a gallium nitride type compound semiconductor
US5789265A (en) * 1995-08-31 1998-08-04 Kabushiki Kaisha Toshiba Method of manufacturing blue light-emitting device by using BCL3 and CL2
WO1998054757A1 (en) * 1997-05-26 1998-12-03 Siemens Aktiengesellschaft Method for etching iii-v semiconductor material

Also Published As

Publication number Publication date
EP1271630A2 (en) 2003-01-02
TW530329B (en) 2003-05-01
US20020142563A1 (en) 2002-10-03
JP3520919B2 (en) 2004-04-19
JP2002289591A (en) 2002-10-04
KR20020075736A (en) 2002-10-05
US6610606B2 (en) 2003-08-26
DE60216857T2 (en) 2007-10-18
KR100475714B1 (en) 2005-03-10
EP1271630B1 (en) 2006-12-20
DE60216857D1 (en) 2007-02-01

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