EP1269798B1 - Commande de diodes electroluminescentes (led) - Google Patents

Commande de diodes electroluminescentes (led) Download PDF

Info

Publication number
EP1269798B1
EP1269798B1 EP01921322A EP01921322A EP1269798B1 EP 1269798 B1 EP1269798 B1 EP 1269798B1 EP 01921322 A EP01921322 A EP 01921322A EP 01921322 A EP01921322 A EP 01921322A EP 1269798 B1 EP1269798 B1 EP 1269798B1
Authority
EP
European Patent Office
Prior art keywords
transistor
control circuit
circuit according
emitting diode
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP01921322A
Other languages
German (de)
English (en)
Other versions
EP1269798A1 (fr
Inventor
Werner Ludorf
Peter Hein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tridonicatco GmbH and Co KG
Original Assignee
Tridonicatco GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tridonicatco GmbH and Co KG filed Critical Tridonicatco GmbH and Co KG
Publication of EP1269798A1 publication Critical patent/EP1269798A1/fr
Application granted granted Critical
Publication of EP1269798B1 publication Critical patent/EP1269798B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20Controlling the colour of the light

Definitions

  • the present invention relates to a control circuit for at least one Led.
  • the invention relates generally to the field of light emitting diodes (LEDs) and more specifically - in the field of the use of such LEDs Illumination purposes.
  • LEDs light emitting diodes
  • Yield light output per watt
  • the blue LEDs necessary for the generation of white light have recently achieved a satisfactory level of efficiency.
  • FIG. 12 shows a control circuit as it is present in products manufactured by the company Color Kinetics are sold and essentially the US patent mentioned correspond.
  • the LED LED is controlled with a constant current source KSQ.
  • the Constant current source has a bipolar transistor, with the light emitting diode LED the collector of an NPN transistor is connected.
  • the emitter of transistor Q1 the constant current source KSQ is grounded by means of an ohmic resistor R2 connected and via the PWM circuit for regulating the current to the control connection of transistor Q1 fed back.
  • the NPN transistor provides a switchable Current drain (also known as current sink or in English "current sink”).
  • the diode current is detected by means of the ohmic resistor R2 and by means of Change in base voltage regulated to a setpoint.
  • a PWM signal is used to dim the LED connected to the base of transistor Q1.
  • the advantage of the PWM signal is that the light-emitting diode LED, which implements changes in the current flow practically instantaneously, is either fully or not at all controlled. The efficiency is in these states significantly larger compared to intermediate values in which a diode current between Zero and maximum current flow through the LED LED flows.
  • the pulse duty factor of the PWM signal on the NPN transistor Q1 (at constant frequency) changed. By increasing the dead times of the PWM signal becomes the perceived brightness of the LED for the human eye dimmed.
  • a control circuit for at least one a light-emitting diode which has a constant current source.
  • the Constant current source has an operational amplifier, the output of which with the Control connection of an (external) transistor is connected.
  • the LED is with a first output-side connection of the transistor connected in series.
  • a second output-side connection of the transistor is to the inverting input of the Operational amplifier fed back.
  • Feedback side of the transistor provided a component that the potential of Feedback side of the transistor at least by the value of an offset voltage of the Operational amplifier raises when no or only one by the LED infinitesimal current flows.
  • this definition also includes a component that has the potential always on the feedback side of the transistor by a predetermined value greater than or equal to the offset voltage of the operational amplifier.
  • the component is typically a voltage source.
  • the component can have a further diode and on the feedback side in particular, be a light emitting diode, the voltage drop and the current flow in implements another light output.
  • the light-emitting diode is advantageously on the Feedback side a red light emitting diode, because the forward voltage of red LEDs is lower than that of green or blue LEDs.
  • a Control circuit provided for a light emitting diode which has a constant current source has a transistor.
  • the light emitting diode is in series with a first one output-side connection of the transistor switched.
  • a second output side Connection of the transistor is the control connection (base or gate) of the transistor fed back. Another is on the feedback side of the transistor LED provided.
  • This additional light-emitting diode can be connected in series to an ohmic resistor be switched.
  • the further light-emitting diode is advantageously a red light-emitting diode, the advantages of which have already been explained above.
  • the transistor can be a bipolar transistor his.
  • Pulse width modulated voltage signals are applied. Dimming the at least one light-emitting diode is then implemented by changing the duty cycle and / or the frequency of the pulse width modulated (PWM) voltage signals on the Control connection of the transistor.
  • PWM pulse width modulated
  • the control circuit consists at least partially of one Multi-layer circuit into which passive components - e.g. Resistors, traces and the like - are integrated.
  • passive components e.g. Resistors, traces and the like - are integrated.
  • This integration is particularly possible if the LEDs are operated at high frequencies because then in the circuit correspondingly lower capacitance or inductance values can be used.
  • a frequency range from 200 kHz to 1 MHz has been found emphasized particularly suitable.
  • One initially caused by the frequency increase Due to increased radiation from high-frequency electromagnetic fields suitable shielding measures are avoided, which - due to the reduced Dimensions of the circuit - can be easily made.
  • the integration of components can be done, for example, by a multilayer Printed circuit board technology.
  • the multilayer circuit is preferably implemented by a LTCC (Low Temperature Cofired Ceramic) structure realized, which consists of several low-sintered ceramic layers or foils arranged one above the other, between which there are conductor tracks.
  • LTCC Low Temperature Cofired Ceramic
  • a new LTCC technique known from EP 0 581 206 A2 Miniaturization of the circuit can be achieved.
  • inductors and capacitors integrated into the multilayer circuit become.
  • the ceramic material has the advantage that it is relatively good at heat conducts, which means that greater performance can be achieved with the same volume can, since heat loss is better radiated.
  • the Heat dissipation by embedding the ceramic structure in a metallic housing increased again. In this way, an effective shielding from the Drive circuit in the environment emitted high-frequency fields can be achieved.
  • the semiconductor modules preferably by means of the known flip chip (FC) technology on the ceramic substrate assembled. It is between the semiconductor mounted without housing and the Introduced a plastic layer on the surface of the carrier substrate, which, on the one hand, is electrically conductive perpendicular to the contacting plane and in the Contacting level has an isolating effect and the other is the one at different thermal expansion of the semiconductor assembly and the Takes resulting ceramic voltages and thus a destruction of the Semiconductor assembly prevented.
  • FC flip chip
  • FIG. 1 there should be a general view of a drive circuit for LED arrays, i.e. more specifically, from arrays with light emitting diodes different Colors (R, G, B) are explained.
  • An AC / DC converter essentially provides one regulated output voltage V + ready.
  • a constant current source for each of the different colors on LEDs (R, G, B) KSQ_R, KSQ_G, KSQ_B provided by a PWM (pulse width modulation) control circuit PWM_R, PWM_G or PWM_B can be controlled. It is also possible, a constant current source for LED arrays of different colors provide.
  • the PWM control circuits PWM_R, PWM_G, PWM_B is turned on external control signal, for example supplied from a bus, the dimming positions specifies LED_R, LED_G or LED_B for the various LED arrays.
  • Figure 2 shows a control circuit for at least one LED 1, the one Operational amplifier OP used.
  • the current flow through the LED1 corresponds to the current flow through the Emitter resistor R3.
  • the output of the operational amplifier OP is connected to the control terminal of the external transistor Q1.
  • the potential of the negative feedback side of transistor Q1 is raised by a constant current source V c .
  • the potential increase is at least as large as an average offset voltage, as typically occurs in operational amplifiers, and is therefore in the range of at least about 2 mV.
  • the circuit of FIG. 2 has the following advantages when dimming the light-emitting diode LED using pulse width modulated signals (PWM signals):
  • the potential on the negative feedback (emitter) side of the transistor Q1 is raised to a higher potential than the potential of the control connection.
  • the potential of the emitter of transistor Q1 is therefore at a higher potential than the base of transistor Q1, so that any current flow is reliably prevented (the “diode” base-emitter blocks).
  • the voltage V must be a significantly above the potential of the constant voltage source V c during the ON phases of the PWM signals.
  • FIG. 3 shows a modification of the exemplary embodiment from FIG. 2, in which an electronic component with a non-linear current-voltage characteristic, ie more precisely, a diode LED2, is used instead of the constant voltage source V c .
  • a component is used on the feedback side of the transistor, which already causes the potential on the feedback side to rise at zero current or infinitesimally small current through the LED1.
  • this component can be a diode and in particular a light emitting diode LED2, which serves to increase the light generation of the LED arrangement.
  • This further light-emitting diode LED2 on the feedback side of the transistor can serve as a complete or, as shown in FIG. 3, partial replacement of the current detector resistor R3 in the constant current source.
  • the second LED2 on the feedback side of the transistor Q1 represents a current detector light-emitting diode, so to speak.
  • the one at zero current or very low current Voltage rise on the feedback side causes the current to flow through the LED LED1 safely suppressed in the switch-off phases.
  • any component that can be used in the Range of low currents has a very large resistance value.
  • the LED 1 which, in the case of constant current sources KSQ with operational amplifier OP, in the switch- off phases T off of the controlling PWM signals, which varies for dimming the LED arrays will occur due to offset voltages of the operational amplifier OP.
  • the residual LED currents hinder the implementation of low dimming levels.
  • the emitter or source potential of the bipolar or MOS-FET transistor is raised by means of a voltage source to such an extent that the offset voltages of the operational amplifier are compensated or overcompensated during the switch- off phase T off .
  • Figure 4 shows another aspect of the present invention. In doing so, again starting from the prior art shown in Figure 5, and in so far Like components, reference is made to the detailed description of Figure 5.
  • Figure 4 is with a control circuit with a constant current source KSQ with pure Current feedback (without operational amplifier OP) of the current detector resistor the feedback side partially replaced by a light emitting diode LED2, which part converts the voltage on the feedback side into light. It will thus improves the luminous efficacy while reducing the development of heat.
  • the current detector resistance R2 in the feedback loop alternatively also completely through the LED2 to be replaced.
  • LED2 it is useful as LED2 to use a red LED in the feedback loop since the forward voltage, i.e. the necessary voltage drop across the diode, the minimum for red light to emit light LEDs is lower than green, blue or white.
  • Control circuits are dealt with, particularly when using of control frequencies in the range from 200 kHz to 1 MHz.
  • For integration of the passive components is the already mentioned LTCC multilayer circuit on.
  • the production of such a ceramic multilayer structure will now be based on the Figures 5a-10 are explained.
  • the basic building block of an LTCC structure is an approximately 100-130 ⁇ m thick low sintering ceramic film - for example made of aluminum oxide, which with glass particles and further filler material is mixed - as shown in Fig. 5a in plan view.
  • the first processing step consists in the ceramic film 10 To punch through holes 11.
  • 5b shows the correspondingly processed Ceramic film 10 in section I-I of Fig. 5a.
  • the Diameter of the via holes 11 in about 250 microns.
  • FIGS. 6a and 6b illustrate the through-hole 11 then with a conductive material, usually with a conductor paste, the one contains relatively high solids content, filled.
  • the Printed on the top of the ceramic film 10 conductor tracks 12 (Fig. 7). This happens usually using screen printing. Thereby for the vias and for the conductor tracks silver, silver / palladium, gold or copper pastes used. In order to avoid deflections, the material composition of the Conductor pastes selected so that they later to the same extent as the later sintering Shrink ceramic layers 10 themselves.
  • FIG. 11 again shows an area of the LTCC structure in an enlarged view Cut. There are still the dividing lines between the individual original ones Ceramic layers are shown, even if - as described above - after Laminating and sintering forms a homogeneous ceramic structure 13. Like on the right On the side of the illustration, the vertical ones can Conductor tracks 11 which are punched out by those in the first method step Via holes are formed, also extend over several levels.
  • the main advantage of using an LTCC structure is that not only Conductor tracks 11 and 12 but also other passive components in the Multi-layer circuit can be integrated. As part of the shown in Fig.
  • an inductance within the ceramic structure 13 could be caused by one single ceramic layer 10 printed spiral-like conductor track can be realized.
  • a Opening or recess can be provided in the ceramic substrate 13, which with a suitable core material, for example ferrite, is filled.
  • inductance and Capacity values up to a certain amount can be achieved. These values are however, for proper operation of the invention Control circuit at frequencies in the range between 200 kHz and 1 MHz sufficient.
  • the operational amplifier is formed by a semiconductor assembly 15, which is not in the Ceramic layer 13 can be integrated.
  • an anisotropically electrically conductive plastic introduced, which is perpendicular to the flip-chip contacting plane and electrically conductive the contacting level has an insulating effect.
  • this plastic 18 also takes tensions due to a different thermal expansion of the ceramic material and the semiconductor assembly 15 can result.
  • This flip-chip technology enables a very high contact density, so that it also leads to a reduction in volume of the entire circuit.
  • the LEDs themselves can also use this Technology can be applied to the top of the multilayer circuit 15.
  • resistors 22 or inductances of the circuit can also be used as discrete parts can be arranged on the surface.
  • the present invention thus also applies to control circuits for LEDs Constant current sources improvements on the feedback side of the transistor Constant current source made, with the training described last a control circuit with extremely compact dimensions can be realized.

Landscapes

  • Led Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Optical Communication System (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)

Claims (16)

  1. Circuit de commande d'au moins une diode électroluminescente (LED1), comportant une source de courant constant (KSQ) qui comporte un amplificateur opérationnel (OP) dont la sortie est reliée à la borne de commande d'un transistor (Q1), la diode électroluminescente (LED1) étant montée en série avec une première borne de sortie du transistor (Q1) et une deuxième borne de sortie du transistor (Q1) étant relié en rétroaction à l'entrée inverseuse de l'amplificateur opérationnel (OP), caractérisé en ce que
       un composant (Vc, LED2) est prévu du côté de la rétroaction du transistor (Q1),
       le potentiel du côté de la rétroaction du transistor (Q1) étant augmenté au moins de la valeur d'une tension de décalage de l'amplificateur opérationnel (OP) lorsque la diode électroluminescente (LED1) n'est traversée par aucun courant resp. n'est traversée que par un courant infinitésimal.
  2. Circuit de commande selon la revendication 1, caractérisé en ce que le composant est une source de tension (Vc).
  3. Circuit de commande selon la revendication 1, caractérisé en ce que le composant est une autre diode (LED2).
  4. Circuit de commande selon la revendication 3, caractérisé en ce que la diode est une diode électroluminescente (LED2).
  5. Circuit de commande selon l'une des revendications précédentes, caractérisé en ce que le composant est monté en série avec une résistance ohmique (R3).
  6. Circuit de commande d'une diode électroluminescente comportant une source de courant constant avec un transistor (Q1), la diode électroluminescente (LED1) étant montée en série avec une première borne de sortie du transistor (Q1) et une deuxième borne de sortie du transistor (Q1) étant reliée en rétroaction à la borne de commande du transistor (Q1), caractérisé en ce qu'une autre diode électroluminescente (LED2) est prévue du côté de la rétroaction du transistor (Q1).
  7. Circuit de commande selon la revendication 6, caractérisé en ce que l'autre diode électroluminescente (LED2) est montée en série avec une résistance ohmique (R2).
  8. Circuit de commande selon la revendication 6, caractérisé en ce que l'autre diode électroluminescente est une diode électroluminescente rouge (LED2).
  9. Circuit de commande selon l'une des revendications précédentes, caractérisé en ce que le transistor est un transistor bipolaire (Q1).
  10. Circuit de commande selon l'une des revendications précédentes, caractérisé en ce que des signaux de tension modulés en largeur d'impulsion (PWM) sont appliqués à la borne de commande du transistor (Q1).
  11. Circuit de commande selon la revendication 10, caractérisé en ce que les signaux de tension ont des fréquences comprises entre 200 kHz et 1 MHz.
  12. Circuit de commande selon l'une des revendications précédentes, caractérisé en ce que celui-ci comporte au moins un circuit multicouche (13) dans lequel sont intégrés des composants passifs (20, 21) du circuit de commande.
  13. Circuit de commande selon la revendication 12, caractérisé en ce qu'un circuit multicouche est constitué de plusieurs cartes de circuits imprimés qui sont disposées les unes sur les autres, dont la face supérieure et/ou inférieure est dotée de pistes conductrices en matière conductrice et qui comportent des trous traversants de contact également remplis de matière conductrice et destinés à relier différents plans de conduction.
  14. Circuit de commande selon la revendication 12, caractérisé en ce que le circuit multicouche est une structure LTCC (13) qui est constituée de plusieurs couches de céramique (10), faiblement frittées et disposées les unes sur les autres, entre lesquelles se trouvent des pistes (12) conductrices, les couches de céramique (10) comportant des trous traversants de contact (11) destinés à relier des pistes conductrices (12) se trouvant dans des plans différents.
  15. Circuit de commande selon l'une des revendications 12 à 14, caractérisé en ce que le circuit multicouche (13) est entouré par un boítier métallique.
  16. Circuit de commande selon l'une des revendications 12 à 15, caractérisé en ce que des modules semi-conducteurs (15) sont fixés à la surface du circuit multicouche (13) par la technologie à protubérances.
EP01921322A 2000-03-17 2001-03-08 Commande de diodes electroluminescentes (led) Expired - Lifetime EP1269798B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10013208 2000-03-17
DE10013208A DE10013208A1 (de) 2000-03-17 2000-03-17 Ansteuerung von Leuchtdioden (LED`s)
PCT/EP2001/002639 WO2001069979A1 (fr) 2000-03-17 2001-03-08 Commande de diodes electroluminescentes (led)

Publications (2)

Publication Number Publication Date
EP1269798A1 EP1269798A1 (fr) 2003-01-02
EP1269798B1 true EP1269798B1 (fr) 2004-06-02

Family

ID=7635237

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01921322A Expired - Lifetime EP1269798B1 (fr) 2000-03-17 2001-03-08 Commande de diodes electroluminescentes (led)

Country Status (5)

Country Link
EP (1) EP1269798B1 (fr)
AT (1) ATE268538T1 (fr)
AU (1) AU2001248339A1 (fr)
DE (2) DE10013208A1 (fr)
WO (1) WO2001069979A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231470A (ja) * 2001-02-05 2002-08-16 Pioneer Electronic Corp 発光ダイオード駆動回路
US6596977B2 (en) * 2001-10-05 2003-07-22 Koninklijke Philips Electronics N.V. Average light sensing for PWM control of RGB LED based white light luminaries
JP2004235498A (ja) * 2003-01-31 2004-08-19 Anden 発光ダイオードの制御装置
US8791644B2 (en) 2005-03-29 2014-07-29 Linear Technology Corporation Offset correction circuit for voltage-controlled current source
EP1864553B1 (fr) * 2005-03-29 2015-08-26 Linear Technology Corporation Circuit de correction de decalage pour source de courant commandee en tension
FR2884639A1 (fr) 2005-04-14 2006-10-20 Thomson Licensing Sa Panneau d'affichage d'images a matrice active, dont les emetteurs sont alimentes par des generateurs de courant pilotables en tension
TWI455645B (zh) 2006-12-08 2014-10-01 Koninkl Philips Electronics Nv 光源、照明器具及照明器具系統
TWI487430B (zh) 2008-01-15 2015-06-01 皇家飛利浦電子股份有限公司 光源
DE102009044058A1 (de) * 2009-09-18 2011-03-31 Müller, Dietmar Dimmbare Lichterkette und Schalter hierfür

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305837A (ja) * 1987-06-05 1988-12-13 Katsuyuki Miyasaka 電子機器
US6016038A (en) * 1997-08-26 2000-01-18 Color Kinetics, Inc. Multicolored LED lighting method and apparatus
JPH11214183A (ja) * 1998-01-22 1999-08-06 Hochiki Corp 発光回路

Also Published As

Publication number Publication date
AU2001248339A1 (en) 2001-09-24
DE50102479D1 (de) 2004-07-08
WO2001069979A1 (fr) 2001-09-20
DE10013208A1 (de) 2001-09-20
ATE268538T1 (de) 2004-06-15
EP1269798A1 (fr) 2003-01-02

Similar Documents

Publication Publication Date Title
EP1264518B1 (fr) Commande de diodes electroluminescentes (led)
EP1273209B1 (fr) Circuit de commande pour diodes electroluminescentes
EP1929847B1 (fr) Carte de circuits imprimes
EP2668821B1 (fr) Module lumineux permettant d'émettre de la lumière mixte
EP1328976A1 (fr) Module del
WO2005013363A2 (fr) Ensemble circuit place sur un substrat et procede pour produire ledit ensemble
EP1269798B1 (fr) Commande de diodes electroluminescentes (led)
DE112005002855B4 (de) LED vom integrierten Typ und Herstellungsverfahren derselben
DE102015102081A1 (de) Licht emittierende vorrichtung und verfahren zum betreiben mehrerer licht emittierender anordnungen
EP0279404B1 (fr) Dispositif émetteur à laser
DE202014006215U1 (de) Leiterplatte mit gekühltem Baustein, insbesondere SMD-Baustein
EP0376100A2 (fr) Procédé et cadre conducteur pour le montage d'un composant semi-conducteur
DE102017208973A1 (de) Elektronische baugruppe für beleuchtungsanwendungen, beleuchtungseinrichtung sowie verfahren zur herstellung einer elektronischen baugruppe
WO2018114931A2 (fr) Module de mur vidéo
DE10230105B4 (de) Weiße LED-Lichtquelle
EP2580946B1 (fr) Agencement de diode luminescente et élément lumineux comprenant notamment un tel agencement de diode luminescente
EP1247432B1 (fr) Ballast et transformateur electroniques
DE4206215A1 (de) Anordnung zur phasenanschnittsteuerung
EP0604485B1 (fr) Dispositif de generation de tensions intermediaires
EP1480500B1 (fr) Circuit d'alimentation en puissance avec supports de circuits tridimensionnelles ainsi que methode de fabrication
WO2020229147A1 (fr) Dispositif d'affichage et procédé de fonctionnement d'un dispositif d'affichage
DE102018121444B3 (de) Leuchtsystem und Verfahren zum Betreiben eines Leuchtsystems
DE202016004805U1 (de) LED Schaltungsanordnung zur Parameterkompensation
EP3599796B1 (fr) Bande lumineuse à del et système d'éclairage
AT6437U1 (de) Elektrische schaltung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20020619

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

RIN1 Information on inventor provided before grant (corrected)

Inventor name: LUDORF, WERNER

Inventor name: HEIN, PETER

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040602

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040602

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040602

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040602

Ref country code: FR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040602

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040602

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20040602

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

Ref country code: CH

Ref legal event code: NV

Representative=s name: A. BRAUN, BRAUN, HERITIER, ESCHMANN AG PATENTANWAE

REF Corresponds to:

Ref document number: 50102479

Country of ref document: DE

Date of ref document: 20040708

Kind code of ref document: P

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: GERMAN

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040902

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040902

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20040913

LTIE Lt: invalidation of european patent or patent extension

Effective date: 20040602

GBV Gb: ep patent (uk) treated as always having been void in accordance with gb section 77(7)/1977 [no translation filed]

Effective date: 20040602

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20050308

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050308

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050331

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050331

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20050303

EN Fr: translation not filed
BERE Be: lapsed

Owner name: *TRIDONICATCO G.M.B.H. & CO. K.G.

Effective date: 20050331

BERE Be: lapsed

Owner name: *TRIDONICATCO G.M.B.H. & CO. K.G.

Effective date: 20050331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20041102

REG Reference to a national code

Ref country code: CH

Ref legal event code: PFA

Owner name: TRIDONICATCO GMBH & CO. KG

Free format text: TRIDONICATCO GMBH & CO. KG#FAERBERGASSE 15#6851 DORNBIRN (AT) -TRANSFER TO- TRIDONICATCO GMBH & CO. KG#FAERBERGASSE 15#6851 DORNBIRN (AT)

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 20130326

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: AT

Payment date: 20140328

Year of fee payment: 14

REG Reference to a national code

Ref country code: CH

Ref legal event code: PCAR

Free format text: NEW ADDRESS: HOLBEINSTRASSE 36-38, 4051 BASEL (CH)

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140331

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140331

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20150601

Year of fee payment: 15

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 268538

Country of ref document: AT

Kind code of ref document: T

Effective date: 20150308

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20150308

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 50102479

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161001