EP1252541A2 - Procede de realisation d'un module d'emission optique - Google Patents

Procede de realisation d'un module d'emission optique

Info

Publication number
EP1252541A2
EP1252541A2 EP01909501A EP01909501A EP1252541A2 EP 1252541 A2 EP1252541 A2 EP 1252541A2 EP 01909501 A EP01909501 A EP 01909501A EP 01909501 A EP01909501 A EP 01909501A EP 1252541 A2 EP1252541 A2 EP 1252541A2
Authority
EP
European Patent Office
Prior art keywords
shaped
wafer
rod
recess
submount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01909501A
Other languages
German (de)
English (en)
Inventor
Ralf Dietrich
Mathias Kaempf
Wolfgang Gramann
Martin Weigert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1252541A2 publication Critical patent/EP1252541A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment

Definitions

  • the present invention relates to a production method for an optical transmitter assembly with the features of claim 1.
  • Such transmitter assemblies are used, for example, in beam deflection recipes of fiber-optic transmitter components or combined transmitter / receiver components.
  • An output radiation beam is generated by an edge-emitting laser diode in these transmit modules and is preferably deflected by 90 ° in a first deflection.
  • the laser diode is mounted on a so-called submount, on which prism-optical elements made of glass for the deflection of the output radiation beam of the laser diode are also attached.
  • FIG. 1 shows an overall view of a fiber-optic transmission component in longitudinal section along an optical glass fiber 23 coupled to the component. It has an assembly platform 25, which is preferably made of metal and has a circular through opening on one longitudinal side. A transmitter module 100 is mounted on one side of this circular through opening and a recess is provided on the other side of the circular through opening, into which a tubular part of a beam deflection recipe 22, which holds a ball lens 26, projects.
  • the beam deflection recipe 22 also has a beveled surface on the inside, on which a deflection mirror 24 is provided.
  • the transmitter assembly 10 is mounted on a silicon submount 1 and essentially consists of an edge-emitting semiconductor laser 6 and glass prismatic elements 2a, 2b and 2c, between which a highly reflective interface is at a 45 ° angle to the laser beam or to the surface of the submount is formed.
  • a highly reflective interface is at a 45 ° angle to the laser beam or to the surface of the submount is formed.
  • one of the semiconductor lasers 6 emitted laser radiation beam at this interface is deflected by 90 ° in the direction of the submount 1 transparent to the laser radiation, passes through the circular through opening of the mounting platform 25 and is bundled by the ball lens 26.
  • the radiation beam then strikes the deflecting mirror 24 and is directed by the latter onto the entry surface of the glass fiber 23.
  • the transmitter assembly 100 has been manufactured by individually producing the prismatic deflection elements 2a, 2b and 2c, placing them on the submount 1, aligning them with one another and gluing or anodically bonding them.
  • the surfaces of the prism-optical elements were created using grinding and polishing techniques.
  • a mirror coating was applied to the prism surface that contributed to the beam deflection.
  • Such manufacturing processes are known, for example, from DE-A-198 10 624 and EP-A-0 660 467.
  • DE-A-42 11 899 describes a method for producing a microsystem, in which several wafers are connected to form a wafer array. The connection is made after the individual wafers have been structured.
  • the present invention has for its object to simplify the manufacturing process for an optical transmitter assembly and thus reduce the time required for manufacturing. This object is achieved by the features of patent claim 1.
  • the present invention thus describes a manufacturing method for an optical transmitter assembly, in which
  • a transparent submount wafer and a glass wafer are first connected to one another on their main surfaces, b) then a recess is formed in the glass wafer, which has at least one side wall which essentially forms a 45 ° angle with the surface of the submount wafer, c) a semiconductor laser is then mounted on the submount wafer in such a way that, during operation, it emits a radiation beam into the glass wafer in the direction of the at least one side wall of the recess, and d) the at least one side wall of the recess is acted on in such a way that it is for the radiation beam becomes highly reflective.
  • a submount wafer and a glass wafer are thus connected without there being any structured surfaces on the glass wafer.
  • the glass wafer is only structured after it has been connected to the submount wafer.
  • the transparent submount wafer preferably consists of a material of relatively high thermal conductivity, so that it has the properties of a heat sink.
  • a V-shaped recess is formed in method step b) and in method step d) at least one of the opposite side walls of the V-shaped recess is acted on in the manner described. For this it proves to be advantageous clinging when the opposite side walls form essentially a 90 ° angle with each other.
  • the V-shaped recess can advantageously be formed in that a V-shaped trench is produced in the glass wafer by means of a V-shaped saw blade, such as a cutting abrasive blade or the like.
  • the V-shaped recess can first be pre-sawn with a coarse-grained cut-off wheel and then sawed-in with a fine-grained cut-off wheel.
  • a rod-shaped element with a horizontal upper support surface which is essentially rectangular-triangular in cross section can be introduced into the V-shaped recess.
  • one of its equilateral side walls can be provided with a reflective coating.
  • the rod-shaped element can first be shaped as a rod with a rectangular cross-section, with an area of the rod on the surface of the sub-element before or after being introduced into the V-shaped recess. Mountwafer facing away is removed in such a way that a horizontal contact surface is formed. This can serve to arrange a light receiver on it so that the transmitter assembly can be used in a combined transmitter / receiver component.
  • a rod with a rectangular cross section can be obtained, for example, by providing a glass wafer with a reflective coating on a main surface and dividing it into a number of rods.
  • the submount wafer is preferably formed by a semiconductor wafer, in particular a silicon wafer, if it is sufficiently transparent for the required wavelength.
  • FIG. 3 is a V-shaped recess formed in the glass wafer of FIG. 2;
  • Fig. 4 is provided with a reflective coating
  • Fig. 6 positioned, reflection-coated rod of Fig. 5, which on its top to form a
  • Mounting surface is flattened
  • 2, 3 and 5 to 7 show an exemplary embodiment of the method according to the invention for producing an optical transmitter module on the basis of cross-sectional representations of the intermediate products after individual method steps.
  • FIG. 2 shows how a submount wafer 1 and a glass wafer 2 are first connected to one another on their main surfaces.
  • a semiconductor laser 6 is to be mounted on the submount wafer 1 in a later method step.
  • the submount wafer should have the properties of a heat sink, and thus consist of a material with the highest possible thermal conductivity. Silicon is used as the preferred material for the submount wafer 1.
  • cutouts 3 are preferably formed before the connection to the silicon wafer 1, which make it possible in the subsequent method step to have an area below the V-shaped one to be formed
  • These recesses 3 are preferably produced by wet chemical etching.
  • the glass wafer 2 is connected to the submount wafer 1 at regions in which no cutouts 3 have been produced.
  • Anodic bonding is preferably used as the connection technique.
  • FIG. 3 shows an intermediate product after removal of the areas of the glass wafer 2 that are not required. These areas are preferably removed by sawing.
  • Fig. 2 two dashed saw cut lines are indicated, through which the outer areas of the glass wafer 2 are separated.
  • a V-shaped trench 20 of a predetermined length is then produced in the glass wafer 2 by means of a V-shaped saw blade, in particular a V-shaped cutting abrasive blade. This sawing is indicated by two dash-dotted lines in FIG. 2.
  • the V-shaped trench 20 has a shape such that its side walls are inclined at 90 ° to one another and their imaginary cutting line lies on the surface of the submount wafer 1 and each form a 45 ° angle with the surface of the submount wafer 1.
  • the resulting side walls 5 thus also form a 45 ° angle with the direction of incidence of the laser beam of the semiconductor laser 6 to be assembled later (see FIG. 7).
  • the mentioned central recess 3 ensures that the V-groove sawing does not have to be carried out up to the surface of the submount wafer 1.
  • the V-shaped recess 20 can first be pre-sawn with a relatively coarse-grained cutting abrasive sheet and then sawn-in with a relatively fine-grained cutting abrasive sheet.
  • the sawing steps thus leave two optical prism elements 2a and 2b on the submount wafer 1, between which the aforementioned V-profile 20 was formed.
  • This The method for producing the optical prism elements 2a and 2b represents a simplification compared to the separate manufacture of the individual optical prism elements and placement on the submount wafer 1 known in the prior art.
  • Fig. 4 it is indicated how a plurality of so-called reflection rods 7 can be produced, which are intended to be inserted into the V-shaped profile.
  • a glass wafer 16 is provided with a reflective coating 9 and the same along saw cut lines 15 into individual rods 7
  • the reflection coating 9 can be a metallic coating or a dielectric layer sequence.
  • a single rod 7, which preferably has the same length as the V-shaped trench 20, is inserted into the V-groove and glued therein, the reflective coating 9 being arranged on the side surface of the V-groove on which the laser beam of the semiconductor laser 6 still to be assembled (see FIG. 7) enters the optical prism element 2a.
  • the rod 7 is thus arranged in the V-trench 20 in such a way that the reflection coating 9 forms a 45 ° angle to the direction of incidence of the laser beam.
  • the area of the rod 7 facing away from the submount wafer 1 can be removed in such a way that a flat mounting surface 10 can be formed.
  • the rod 7 is preferably ground down until a flat mounting surface has been achieved.
  • this flat mounting surface is polished in a suitable manner so that it can serve to receive and attach a light receiver 11 (see FIG. 7).
  • an elongated, rod-shaped element 12 with a rectangular-triangular cross section is positioned in the V-trench.
  • This rod-shaped element 12 preferably has the same length as the V-shaped trench.
  • the rod-shaped element 12 can also be applied to other than the above standing described manner are made. For example, it can be sawed out of a glass wafer in this form, the glass wafer either already having a reflective coating 9 or only then being applied to one of the side walls of the rod-shaped element 12.
  • FIG. 7 shows how a semiconductor laser 6, preferably an edge-emitting semiconductor laser 6, is mounted on the exposed surface 8 of the submount wafer 1 such that the laser beam S emitted by it falls into the optical prism element 2a and on the Reflective coating 9 of the rod-shaped element 12 is reflected downward at a 90 ° angle and passes through the transparent submount wafer 1.
  • a monitor diode 13 can either be arranged behind the semiconductor laser 6 and thus detects the small proportion of the laser radiation passing through the rear resonator mirror. It can also be arranged beyond the optical prism element 2b and thus detects the small proportion of the radiation passing through the reflection coating 9.
  • the light receiver 11 preferably a receiver diode, such as a PIN diode, can detect a received beam arriving in the optical fiber 23 (see FIG. 1), for example a small proportion passing through the reflective coating 9 and striking the light receiver 11.
  • the reflective coating 9 exhibits a wavelength-dependent reflectivity and transmissivity. points so that, for example, a transmission beam experiences a high reflectivity at a first wavelength, while a reception beam experiences a high transmissivity of the reflection coating 9 at a second wavelength.
  • the fully processed transmitter assembly shown in FIG. 7, as already described in connection with FIG. 1, can be connected to an assembly platform 25 to form a complete transmit component or combined transmit / receive component by the transparent submount wafer 1 is glued to a surface of the mounting platform 25.
  • An optical beam guiding device such as a beam deflection recipe with a fiber connection, can be mounted on the opposite surface of the mounting platform 25.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

La présente invention concerne un module d'émission optique réalisé par fixation d'une tranche de verre (2) sur une tranche embase transparente (1), et enfin par formation entre des éléments de prisme optiques (2a, 2b), d'une partie en saillie en forme de V (20), par découpage à la scie ciblé. Dans la partie en saillie en forme de V (20) est inséré un élément en forme de barre (12) présentant un revêtement réfléchissant (9), de sorte qu'un rayonnement laser (S) émis par un laser à semi-conducteur (6) se trouve dévié de 90° au niveau de l'élément en forme de barre (12) à revêtement réfléchissant, et pénètre à travers la tranche embase (1).
EP01909501A 2000-01-20 2001-01-15 Procede de realisation d'un module d'emission optique Withdrawn EP1252541A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10002329 2000-01-20
DE10002329A DE10002329A1 (de) 2000-01-20 2000-01-20 Herstellungsverfahren für eine optische Sende-Baugruppe
PCT/DE2001/000229 WO2001053868A2 (fr) 2000-01-20 2001-01-15 Procede de realisation d'un module d'emission optique

Publications (1)

Publication Number Publication Date
EP1252541A2 true EP1252541A2 (fr) 2002-10-30

Family

ID=7628154

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01909501A Withdrawn EP1252541A2 (fr) 2000-01-20 2001-01-15 Procede de realisation d'un module d'emission optique

Country Status (4)

Country Link
US (1) US6693312B2 (fr)
EP (1) EP1252541A2 (fr)
DE (1) DE10002329A1 (fr)
WO (1) WO2001053868A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10002329A1 (de) * 2000-01-20 2001-08-02 Infineon Technologies Ag Herstellungsverfahren für eine optische Sende-Baugruppe
AU2002360892A1 (en) * 2002-12-04 2004-06-23 Infineon Technologies Ag Bidirectional emitting and receiving module
US7136552B2 (en) * 2003-06-19 2006-11-14 Emcore Corporation TO-packaged optic-fiber receiving interface and method
US7011455B2 (en) * 2003-06-19 2006-03-14 Emcore Corporation Opto-electronic TO-package and method for laser
WO2014021904A1 (fr) * 2012-08-03 2014-02-06 Hoya Corporation Usa Sous-monture destinée à des composants optoélectroniques, optiques ou photoniques
US10283018B1 (en) 2018-05-11 2019-05-07 Jack B. Martin Sign manufacturing system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121014A (ja) * 1984-11-16 1986-06-09 Nec Corp 光・電気混成集積回路
DE3819811A1 (de) * 1988-06-10 1989-12-14 Bosch Gmbh Robert T-koppler fuer lichtwellenleiter
JPH0513749A (ja) * 1991-06-28 1993-01-22 Nippon Telegr & Teleph Corp <Ntt> 光接続回路
DE4211899C2 (de) 1992-04-09 1998-07-16 Daimler Benz Aerospace Ag Mikrosystem-Laseranordnung und Mikrosystem-Laser
DE59305898D1 (de) 1993-12-22 1997-04-24 Siemens Ag Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US5439647A (en) * 1994-02-25 1995-08-08 Fiberchem, Inc. Chip level waveguide sensor
KR100236432B1 (ko) * 1996-07-31 1999-12-15 미야즈 쥰이치로 광학 편광기, 이의 제조 방법 및 광학 편광기 제조용 블레이드
DE19810624A1 (de) * 1998-03-12 1999-09-16 Bosch Gmbh Robert Elektrooptisches Modul
DE10002329A1 (de) * 2000-01-20 2001-08-02 Infineon Technologies Ag Herstellungsverfahren für eine optische Sende-Baugruppe

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0153868A3 *

Also Published As

Publication number Publication date
DE10002329A1 (de) 2001-08-02
US20030057443A1 (en) 2003-03-27
WO2001053868A3 (fr) 2002-03-21
WO2001053868A2 (fr) 2001-07-26
US6693312B2 (en) 2004-02-17

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