EP1230718A1 - Multiwellenlängenlasersystem - Google Patents
MultiwellenlängenlasersystemInfo
- Publication number
- EP1230718A1 EP1230718A1 EP00960376A EP00960376A EP1230718A1 EP 1230718 A1 EP1230718 A1 EP 1230718A1 EP 00960376 A EP00960376 A EP 00960376A EP 00960376 A EP00960376 A EP 00960376A EP 1230718 A1 EP1230718 A1 EP 1230718A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- laser
- range
- core
- mode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15465599P | 1999-09-20 | 1999-09-20 | |
US154655P | 1999-09-20 | ||
PCT/DK2000/000521 WO2001022542A2 (en) | 1999-09-20 | 2000-09-20 | Multi-wavelength laser system |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1230718A1 true EP1230718A1 (de) | 2002-08-14 |
Family
ID=22552209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00960376A Withdrawn EP1230718A1 (de) | 1999-09-20 | 2000-09-20 | Multiwellenlängenlasersystem |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1230718A1 (de) |
JP (1) | JP2003510822A (de) |
AU (1) | AU7271100A (de) |
CA (1) | CA2385364A1 (de) |
WO (1) | WO2001022542A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108603980A (zh) * | 2015-11-12 | 2018-09-28 | Bb光电公司 | 具有介质结构的光子集成器件 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6952504B2 (en) | 2001-12-21 | 2005-10-04 | Neophotonics Corporation | Three dimensional engineering of planar optical structures |
AU2002239458A1 (en) | 2000-10-26 | 2002-06-11 | Nanogram Corporation | Multilayered optical structures |
SG111918A1 (en) * | 2001-09-07 | 2005-06-29 | Gbs Data Pte Ltd | Integrated semiconductor laser source |
JP2006332137A (ja) * | 2005-05-23 | 2006-12-07 | Nippon Telegr & Teleph Corp <Ntt> | 発光素子 |
US8068525B2 (en) | 2007-08-30 | 2011-11-29 | Mitsubishi Electric Corporation | Solid-state laser element |
CN103311807B (zh) * | 2013-06-09 | 2015-04-08 | 中国科学院半导体研究所 | 多波长激光器阵列芯片的制作方法 |
US9568640B2 (en) | 2014-09-15 | 2017-02-14 | Baker Hughes Incorporated | Displacement measurements using simulated multi-wavelength light sources |
TWI608260B (zh) * | 2016-05-17 | 2017-12-11 | 國立勤益科技大學 | All-fiber optical signal acquisition multiplexer design method and all-fiber optical signal pickup multiplexer |
CN106253057A (zh) * | 2016-09-30 | 2016-12-21 | 青岛海信宽带多媒体技术有限公司 | 一种激光器件 |
JP7302430B2 (ja) * | 2019-10-24 | 2023-07-04 | 富士通株式会社 | 波長可変光源、これを用いた光伝送装置、及び波長可変光源の制御方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242591A (ja) * | 1997-03-03 | 1998-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 多波長レーザ |
-
2000
- 2000-09-20 WO PCT/DK2000/000521 patent/WO2001022542A2/en not_active Application Discontinuation
- 2000-09-20 EP EP00960376A patent/EP1230718A1/de not_active Withdrawn
- 2000-09-20 AU AU72711/00A patent/AU7271100A/en not_active Abandoned
- 2000-09-20 JP JP2001525812A patent/JP2003510822A/ja active Pending
- 2000-09-20 CA CA002385364A patent/CA2385364A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
---|
See references of WO0122542A3 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108603980A (zh) * | 2015-11-12 | 2018-09-28 | Bb光电公司 | 具有介质结构的光子集成器件 |
CN108603980B (zh) * | 2015-11-12 | 2020-07-28 | Bb光电公司 | 具有介质结构的光子集成器件 |
Also Published As
Publication number | Publication date |
---|---|
WO2001022542A3 (en) | 2001-11-01 |
CA2385364A1 (en) | 2001-03-29 |
WO2001022542A2 (en) | 2001-03-29 |
JP2003510822A (ja) | 2003-03-18 |
AU7271100A (en) | 2001-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20020322 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
17Q | First examination report despatched |
Effective date: 20030324 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20031007 |