AU7271100A - Multi-wavelength laser system - Google Patents
Multi-wavelength laser systemInfo
- Publication number
- AU7271100A AU7271100A AU72711/00A AU7271100A AU7271100A AU 7271100 A AU7271100 A AU 7271100A AU 72711/00 A AU72711/00 A AU 72711/00A AU 7271100 A AU7271100 A AU 7271100A AU 7271100 A AU7271100 A AU 7271100A
- Authority
- AU
- Australia
- Prior art keywords
- laser system
- wavelength laser
- wavelength
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15465599P | 1999-09-20 | 1999-09-20 | |
US60154655 | 1999-09-20 | ||
PCT/DK2000/000521 WO2001022542A2 (en) | 1999-09-20 | 2000-09-20 | Multi-wavelength laser system |
Publications (1)
Publication Number | Publication Date |
---|---|
AU7271100A true AU7271100A (en) | 2001-04-24 |
Family
ID=22552209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU72711/00A Abandoned AU7271100A (en) | 1999-09-20 | 2000-09-20 | Multi-wavelength laser system |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1230718A1 (de) |
JP (1) | JP2003510822A (de) |
AU (1) | AU7271100A (de) |
CA (1) | CA2385364A1 (de) |
WO (1) | WO2001022542A2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6952504B2 (en) | 2001-12-21 | 2005-10-04 | Neophotonics Corporation | Three dimensional engineering of planar optical structures |
CN100484752C (zh) | 2000-10-26 | 2009-05-06 | 尼奥弗托尼克斯公司 | 多层光学结构 |
SG111918A1 (en) * | 2001-09-07 | 2005-06-29 | Gbs Data Pte Ltd | Integrated semiconductor laser source |
JP2006332137A (ja) * | 2005-05-23 | 2006-12-07 | Nippon Telegr & Teleph Corp <Ntt> | 発光素子 |
JPWO2009028079A1 (ja) * | 2007-08-30 | 2010-11-25 | 三菱電機株式会社 | 固体レーザ素子 |
CN103311807B (zh) * | 2013-06-09 | 2015-04-08 | 中国科学院半导体研究所 | 多波长激光器阵列芯片的制作方法 |
US9568640B2 (en) | 2014-09-15 | 2017-02-14 | Baker Hughes Incorporated | Displacement measurements using simulated multi-wavelength light sources |
WO2017083657A1 (en) * | 2015-11-12 | 2017-05-18 | Ring William S | Photonic integrated device with dielectric structure |
TWI608260B (zh) * | 2016-05-17 | 2017-12-11 | 國立勤益科技大學 | All-fiber optical signal acquisition multiplexer design method and all-fiber optical signal pickup multiplexer |
CN106253057A (zh) * | 2016-09-30 | 2016-12-21 | 青岛海信宽带多媒体技术有限公司 | 一种激光器件 |
JP7302430B2 (ja) * | 2019-10-24 | 2023-07-04 | 富士通株式会社 | 波長可変光源、これを用いた光伝送装置、及び波長可変光源の制御方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242591A (ja) * | 1997-03-03 | 1998-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 多波長レーザ |
-
2000
- 2000-09-20 CA CA002385364A patent/CA2385364A1/en not_active Abandoned
- 2000-09-20 WO PCT/DK2000/000521 patent/WO2001022542A2/en not_active Application Discontinuation
- 2000-09-20 AU AU72711/00A patent/AU7271100A/en not_active Abandoned
- 2000-09-20 EP EP00960376A patent/EP1230718A1/de not_active Withdrawn
- 2000-09-20 JP JP2001525812A patent/JP2003510822A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2003510822A (ja) | 2003-03-18 |
WO2001022542A3 (en) | 2001-11-01 |
WO2001022542A2 (en) | 2001-03-29 |
CA2385364A1 (en) | 2001-03-29 |
EP1230718A1 (de) | 2002-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |