CA2385364A1 - Multi-wavelength laser system - Google Patents

Multi-wavelength laser system Download PDF

Info

Publication number
CA2385364A1
CA2385364A1 CA002385364A CA2385364A CA2385364A1 CA 2385364 A1 CA2385364 A1 CA 2385364A1 CA 002385364 A CA002385364 A CA 002385364A CA 2385364 A CA2385364 A CA 2385364A CA 2385364 A1 CA2385364 A1 CA 2385364A1
Authority
CA
Canada
Prior art keywords
laser
range
core
mode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002385364A
Other languages
English (en)
French (fr)
Inventor
Christian Laurent-Lund
Soren Guldberg-Kjaer
Mads Sckerl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CISILIAS AS
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2385364A1 publication Critical patent/CA2385364A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CA002385364A 1999-09-20 2000-09-20 Multi-wavelength laser system Abandoned CA2385364A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15465599P 1999-09-20 1999-09-20
US60/154,655 1999-09-20
PCT/DK2000/000521 WO2001022542A2 (en) 1999-09-20 2000-09-20 Multi-wavelength laser system

Publications (1)

Publication Number Publication Date
CA2385364A1 true CA2385364A1 (en) 2001-03-29

Family

ID=22552209

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002385364A Abandoned CA2385364A1 (en) 1999-09-20 2000-09-20 Multi-wavelength laser system

Country Status (5)

Country Link
EP (1) EP1230718A1 (de)
JP (1) JP2003510822A (de)
AU (1) AU7271100A (de)
CA (1) CA2385364A1 (de)
WO (1) WO2001022542A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311807A (zh) * 2013-06-09 2013-09-18 中国科学院半导体研究所 多波长激光器阵列芯片的制作方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002044765A2 (en) 2000-10-26 2002-06-06 Nanogram Corporation Multilayered optical structures
US6952504B2 (en) 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
SG111918A1 (en) * 2001-09-07 2005-06-29 Gbs Data Pte Ltd Integrated semiconductor laser source
JP2006332137A (ja) * 2005-05-23 2006-12-07 Nippon Telegr & Teleph Corp <Ntt> 発光素子
JPWO2009028079A1 (ja) * 2007-08-30 2010-11-25 三菱電機株式会社 固体レーザ素子
US9568640B2 (en) 2014-09-15 2017-02-14 Baker Hughes Incorporated Displacement measurements using simulated multi-wavelength light sources
US10128635B2 (en) * 2015-11-12 2018-11-13 BB Photonics Inc. Photonic integrated device with dielectric structure
TWI608260B (zh) * 2016-05-17 2017-12-11 國立勤益科技大學 All-fiber optical signal acquisition multiplexer design method and all-fiber optical signal pickup multiplexer
CN106253057A (zh) * 2016-09-30 2016-12-21 青岛海信宽带多媒体技术有限公司 一种激光器件
JP7302430B2 (ja) * 2019-10-24 2023-07-04 富士通株式会社 波長可変光源、これを用いた光伝送装置、及び波長可変光源の制御方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242591A (ja) * 1997-03-03 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> 多波長レーザ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311807A (zh) * 2013-06-09 2013-09-18 中国科学院半导体研究所 多波长激光器阵列芯片的制作方法
CN103311807B (zh) * 2013-06-09 2015-04-08 中国科学院半导体研究所 多波长激光器阵列芯片的制作方法

Also Published As

Publication number Publication date
AU7271100A (en) 2001-04-24
EP1230718A1 (de) 2002-08-14
WO2001022542A3 (en) 2001-11-01
JP2003510822A (ja) 2003-03-18
WO2001022542A2 (en) 2001-03-29

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Legal Events

Date Code Title Description
FZDE Discontinued