WO2001022542A3 - Multi-wavelength laser system - Google Patents

Multi-wavelength laser system Download PDF

Info

Publication number
WO2001022542A3
WO2001022542A3 PCT/DK2000/000521 DK0000521W WO0122542A3 WO 2001022542 A3 WO2001022542 A3 WO 2001022542A3 DK 0000521 W DK0000521 W DK 0000521W WO 0122542 A3 WO0122542 A3 WO 0122542A3
Authority
WO
WIPO (PCT)
Prior art keywords
lasers
neff
refractive index
wavelength
waveguide
Prior art date
Application number
PCT/DK2000/000521
Other languages
French (fr)
Other versions
WO2001022542A2 (en
Inventor
Christian Laurent-Lund
Soeren Guldberg-Kjaer
Mads Sckerl
Original Assignee
Laurent Lund Christian
Guldberg Kjaer Soeren
Mads Sckerl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laurent Lund Christian, Guldberg Kjaer Soeren, Mads Sckerl filed Critical Laurent Lund Christian
Priority to EP00960376A priority Critical patent/EP1230718A1/en
Priority to AU72711/00A priority patent/AU7271100A/en
Priority to CA002385364A priority patent/CA2385364A1/en
Priority to JP2001525812A priority patent/JP2003510822A/en
Publication of WO2001022542A2 publication Critical patent/WO2001022542A2/en
Publication of WO2001022542A3 publication Critical patent/WO2001022542A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a system and a method providing multi-wavelength emitting optical integrated planar waveguide device with large wavelength span, having tight control over absolute and especially relative positions of the emitted wavelengths, as well as narrow line widths. The neff experienced by a laser mode in a waveguide is at least partly determined by the physical overlap, the confinement factor, between the laser mode and the refractive index profile of the waveguide core. If the waveguides have well defined refractive index profiles, adjusting the transverse dimensions of the waveguide core adjusts the refractive index profile, and thus the confinement factor and neff. According to the present invention, two or more waveguide lasers are formed wherein the reflective members forming the laser cavity have a spectrally dependent reflectivity which depends upon the effective refractive index, neff, experienced by a laser mode at the position of the reflective member. By identical reflective members, such as Bragg gratings, for the different lasers, the wavelength of the lasers can be adjusted by adjusting the relative transverse dimensions, such as the widths, of the lasers. This allows for a precise relative tuning of the lasers, and eliminates uncertainties in the relative grating periods of the Bragg gratings. The dependence of neff upon the width w, neff(w), are preferably large in order to span a large range of wavelength using only a small variation in the width of the waveguides. Thereby different lasers will have approximately the same dimensions.
PCT/DK2000/000521 1999-09-20 2000-09-20 Multi-wavelength laser system WO2001022542A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP00960376A EP1230718A1 (en) 1999-09-20 2000-09-20 Multi-wavelength laser system
AU72711/00A AU7271100A (en) 1999-09-20 2000-09-20 Multi-wavelength laser system
CA002385364A CA2385364A1 (en) 1999-09-20 2000-09-20 Multi-wavelength laser system
JP2001525812A JP2003510822A (en) 1999-09-20 2000-09-20 Multi-wavelength laser system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15465599P 1999-09-20 1999-09-20
US60/154,655 1999-09-20

Publications (2)

Publication Number Publication Date
WO2001022542A2 WO2001022542A2 (en) 2001-03-29
WO2001022542A3 true WO2001022542A3 (en) 2001-11-01

Family

ID=22552209

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DK2000/000521 WO2001022542A2 (en) 1999-09-20 2000-09-20 Multi-wavelength laser system

Country Status (5)

Country Link
EP (1) EP1230718A1 (en)
JP (1) JP2003510822A (en)
AU (1) AU7271100A (en)
CA (1) CA2385364A1 (en)
WO (1) WO2001022542A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6952504B2 (en) 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
CN100484752C (en) 2000-10-26 2009-05-06 尼奥弗托尼克斯公司 Multilayered optical structures
SG111918A1 (en) * 2001-09-07 2005-06-29 Gbs Data Pte Ltd Integrated semiconductor laser source
JP2006332137A (en) * 2005-05-23 2006-12-07 Nippon Telegr & Teleph Corp <Ntt> Light-emitting device
JPWO2009028079A1 (en) * 2007-08-30 2010-11-25 三菱電機株式会社 Solid state laser element
CN103311807B (en) * 2013-06-09 2015-04-08 中国科学院半导体研究所 Manufacturing method of multi-wavelength laser array chip
US9568640B2 (en) 2014-09-15 2017-02-14 Baker Hughes Incorporated Displacement measurements using simulated multi-wavelength light sources
WO2017083657A1 (en) * 2015-11-12 2017-05-18 Ring William S Photonic integrated device with dielectric structure
TWI608260B (en) * 2016-05-17 2017-12-11 國立勤益科技大學 All-fiber optical signal acquisition multiplexer design method and all-fiber optical signal pickup multiplexer
CN106253057A (en) * 2016-09-30 2016-12-21 青岛海信宽带多媒体技术有限公司 A kind of Laser Devices
JP7302430B2 (en) * 2019-10-24 2023-07-04 富士通株式会社 Wavelength tunable light source, optical transmission device using the same, and wavelength tunable light source control method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242591A (en) * 1997-03-03 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> Multi-wavelength laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242591A (en) * 1997-03-03 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> Multi-wavelength laser

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
KITAGAWA T ET AL: "Single-frequency Er3+-doped silica-based planar waveguide laser with integrated photo-imprinted Bragg reflectors", ELECTRONICS LETTERS, vol. 30, no. 16, 4 August 1994 (1994-08-04), pages 1311 - 1312, XP002901497 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31) *
SASAKI T ET AL: "10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth", ELECTRONICS LETTERS, vol. 30, no. 10, 12 May 1994 (1994-05-12), pages 785 - 786, XP002901495 *
TALNEAU A ET AL: "Agile and fast switching monolithically integrated four wavelength selectable source at 1.55um", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 11, no. 1, January 1999 (1999-01-01), pages 12 - 14, XP002901498 *
VEASEY D K ET AL: "Arrays of distributed-Bragg-reflector waveguide lasers at 1536 nm in Yb/Er codoped phosphate glass", APPLIED PHYSICS LETTERS, vol. 74, no. 6, 8 February 1999 (1999-02-08), pages 789 - 790, XP002901496 *

Also Published As

Publication number Publication date
JP2003510822A (en) 2003-03-18
WO2001022542A2 (en) 2001-03-29
CA2385364A1 (en) 2001-03-29
EP1230718A1 (en) 2002-08-14
AU7271100A (en) 2001-04-24

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