EP1226286A4 - Dispositif de depot chimique en couches atomiques en phase vapeur - Google Patents

Dispositif de depot chimique en couches atomiques en phase vapeur

Info

Publication number
EP1226286A4
EP1226286A4 EP00950239A EP00950239A EP1226286A4 EP 1226286 A4 EP1226286 A4 EP 1226286A4 EP 00950239 A EP00950239 A EP 00950239A EP 00950239 A EP00950239 A EP 00950239A EP 1226286 A4 EP1226286 A4 EP 1226286A4
Authority
EP
European Patent Office
Prior art keywords
vapor deposition
chemical vapor
atomic layer
layer chemical
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00950239A
Other languages
German (de)
English (en)
Other versions
EP1226286A1 (fr
Inventor
Prasad Narhar Gadgil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP1226286A1 publication Critical patent/EP1226286A1/fr
Publication of EP1226286A4 publication Critical patent/EP1226286A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
EP00950239A 1999-06-24 2000-06-23 Dispositif de depot chimique en couches atomiques en phase vapeur Withdrawn EP1226286A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14111199P 1999-06-24 1999-06-24
US141111P 1999-06-24
PCT/US2000/017202 WO2000079019A1 (fr) 1999-06-24 2000-06-23 Dispositif de depot chimique en couches atomiques en phase vapeur

Publications (2)

Publication Number Publication Date
EP1226286A1 EP1226286A1 (fr) 2002-07-31
EP1226286A4 true EP1226286A4 (fr) 2007-08-15

Family

ID=22494205

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00950239A Withdrawn EP1226286A4 (fr) 1999-06-24 2000-06-23 Dispositif de depot chimique en couches atomiques en phase vapeur

Country Status (4)

Country Link
EP (1) EP1226286A4 (fr)
JP (1) JP2003502878A (fr)
AU (1) AU6336700A (fr)
WO (1) WO2000079019A1 (fr)

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US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
KR100399067B1 (ko) * 2000-12-30 2003-09-26 주식회사 하이닉스반도체 원자층 증착 장치
JP4660926B2 (ja) 2001-01-09 2011-03-30 東京エレクトロン株式会社 枚葉式の処理装置
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
WO2002070779A1 (fr) * 2001-03-02 2002-09-12 Applied Materials, Inc. Appareil et procede de depot sequentiel de films
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6828218B2 (en) * 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
WO2003060973A1 (fr) * 2002-01-10 2003-07-24 Tokyo Electron Limited Dispositif de traitement
KR100979575B1 (ko) * 2002-01-17 2010-09-01 썬듀 테크놀로지스 엘엘씨 원자층 침착 장치 및 이의 제조방법
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6861094B2 (en) 2002-04-25 2005-03-01 Micron Technology, Inc. Methods for forming thin layers of materials on micro-device workpieces
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7118783B2 (en) 2002-06-26 2006-10-10 Micron Technology, Inc. Methods and apparatus for vapor processing of micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US20040142558A1 (en) 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7537662B2 (en) 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
US7055263B2 (en) 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
TWI334450B (en) * 2004-03-12 2010-12-11 Hitachi Int Electric Inc Wafer treatment device and the manufacturing method of semiconductor device
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
DE102004030138A1 (de) * 2004-06-22 2005-12-08 Infineon Technologies Ag Vorrichtung und Verfahren zur Abscheidung von atomaren Schichten aus Precursorverbindungen
US7189287B2 (en) 2004-06-29 2007-03-13 Micron Technology, Inc. Atomic layer deposition using electron bombardment
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US8334015B2 (en) * 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
JP4661990B2 (ja) * 2008-06-27 2011-03-30 東京エレクトロン株式会社 成膜装置、成膜方法、基板処理装置及び記憶媒体
US9297072B2 (en) 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
JP5056735B2 (ja) 2008-12-02 2012-10-24 東京エレクトロン株式会社 成膜装置
JP5011355B2 (ja) * 2009-07-30 2012-08-29 東京エレクトロン株式会社 成膜方法
JP5861762B2 (ja) * 2010-03-19 2016-02-16 東京エレクトロン株式会社 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体
JP5742185B2 (ja) 2010-03-19 2015-07-01 東京エレクトロン株式会社 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
JP2017139263A (ja) * 2016-02-01 2017-08-10 株式会社東芝 半導体装置の製造方法
CN107815668B (zh) * 2017-12-05 2023-05-23 南京工业大学 一种面向中空纤维膜批量改性的旋转原子层沉积反应器
JP6707676B2 (ja) * 2019-01-07 2020-06-10 東芝デバイス＆ストレージ株式会社 半導体装置の製造方法
FI129502B (en) * 2019-04-25 2022-03-31 Beneq Oy Feedstock supply cabinet
JP7247749B2 (ja) * 2019-05-27 2023-03-29 住友金属鉱山株式会社 炭化ケイ素多結晶膜の成膜方法、サセプタ、及び、成膜装置

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Publication number Priority date Publication date Assignee Title
JPS58197724A (ja) * 1982-05-12 1983-11-17 Toshiba Corp 気相成長装置用ガス導入管
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
JPH0443634A (ja) * 1990-06-11 1992-02-13 Fujitsu Ltd 半導体製造装置
US5443647A (en) * 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
EP0677866A1 (fr) * 1994-04-11 1995-10-18 Canon Sales Co., Inc. Appareil de formation de film
US5637146A (en) * 1995-03-30 1997-06-10 Saturn Cosmos Co., Ltd. Method for the growth of nitride based semiconductors and its apparatus
JPH10317145A (ja) * 1997-05-20 1998-12-02 Ricoh Co Ltd 気相成長装置
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition

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US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
JPS58197724A (ja) * 1982-05-12 1983-11-17 Toshiba Corp 気相成長装置用ガス導入管
JPH0443634A (ja) * 1990-06-11 1992-02-13 Fujitsu Ltd 半導体製造装置
US5443647A (en) * 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
EP0677866A1 (fr) * 1994-04-11 1995-10-18 Canon Sales Co., Inc. Appareil de formation de film
US5637146A (en) * 1995-03-30 1997-06-10 Saturn Cosmos Co., Ltd. Method for the growth of nitride based semiconductors and its apparatus
JPH10317145A (ja) * 1997-05-20 1998-12-02 Ricoh Co Ltd 気相成長装置
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition

Non-Patent Citations (1)

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Title
See also references of WO0079019A1 *

Also Published As

Publication number Publication date
EP1226286A1 (fr) 2002-07-31
AU6336700A (en) 2001-01-09
WO2000079019A1 (fr) 2000-12-28
JP2003502878A (ja) 2003-01-21

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