EP1145261A1 - Kondensator mit bczt-dielektrikum - Google Patents
Kondensator mit bczt-dielektrikumInfo
- Publication number
- EP1145261A1 EP1145261A1 EP00902669A EP00902669A EP1145261A1 EP 1145261 A1 EP1145261 A1 EP 1145261A1 EP 00902669 A EP00902669 A EP 00902669A EP 00902669 A EP00902669 A EP 00902669A EP 1145261 A1 EP1145261 A1 EP 1145261A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- dielectric
- capacitor
- ceramic
- electrodes
- capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000000654 additive Substances 0.000 claims abstract description 5
- 230000000996 additive effect Effects 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- PVXQBVLGWOCNGX-UHFFFAOYSA-N [Zr].[Mn].[Ca].[Ba] Chemical compound [Zr].[Mn].[Ca].[Ba] PVXQBVLGWOCNGX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000006187 pill Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GLDUZMNCEGHSBP-UHFFFAOYSA-N 2-(2-octylphenoxy)ethanol Chemical compound CCCCCCCCC1=CC=CC=C1OCCO GLDUZMNCEGHSBP-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Definitions
- the invention relates to a capacitor, in particular a multilayer capacitor with internal electrodes made of base metal, with a ceramic dielectric, the dielectric consisting essentially of a dielectric composition with a barium calcium manganese zirconium titanate as the base material.
- Multi-layer capacitors are among others used for decoupling and buffering the power supply of processors, in particular high-performance microprocessors. During operation in the high-performance range, these active electronic components generate a lot of heat, even with intensive cooling, the temperature of a high-performance processor in continuous operation is 70 ° C to 80 ° C.
- Conventional multilayer capacitors of the Y5V specification only have 20% of their nominal capacity ( ⁇ C ⁇ 80%) at an operating temperature of 80 ° C.
- Capacitors of the X7R specification are therefore preferably used for the production of microprocessors, since they still have 85% of their nominal capacity at a temperature of 125 ° C ( ⁇ C ⁇ 15%).
- the specific capacitance of an X7R capacitor at room temperature is about 5 times lower than that of a capacitor of the Y5V specification, so the dimensions of an X7R capacitor must be larger, e.g. For example, the dimensions of a 1 ⁇ F X7R capacitor must be at least size 1206 (length 0.12 inches, width 0.06 inches). For capacities> 5 ⁇ F, only the more expensive tantalum capacitors can be used.
- WO 98/54737 there is already a ceramic multilayer capacitor which comprises a number of ceramic layers based on doped BaTiO 3 and a number of electrode layers which consist predominantly of nickel, the ceramic layers and the electrode layers being stacked alternately, so that they form a multilayer structure, the two side surfaces with electrical connections are equipped, which contact the electrode layers, and in which the main component of the doped BaTiO 3 of the general formula
- the object is achieved by a capacitor with a ceramic dielectric and at least two electrodes, the dielectric essentially consisting of a dielectric ceramic preparation with a barium-calcium-manganese-zirconium-titanate as the base material, which has the composition (Ba ⁇ - ⁇ Ca ⁇ ) y [Ti ⁇ -abc-dZraMn b Nb c Dyd] ⁇ 3 with 0 ⁇ a ⁇ 0.25, c-0.5d ⁇ b ⁇ 0.015, 0.001 ⁇ c ⁇ O.Ol, 0.005 ⁇ d ⁇ 0.02, 0 ⁇ x ⁇ 0.20, 1.001 ⁇ y ⁇ 1.014, 0.0005 ⁇ z ⁇ 0.03 and as a further additive contains SiO 2 in a quantity z with 0.0005 z ⁇ 0.03moL formula unit.
- Such a dielectric ceramic preparation is characterized by a low sintering temperature of 1200 ° C. Its fine grain size makes it suitable for very thin dielectric layers. Capacitors with a dielectric with this material have an exceptionally high breakdown voltage ⁇ 100 V / ⁇ m and are resistant to aging if they are kept under direct current. This dielectric ceramic composition can therefore be used to produce capacitors with high capacitance and small dimensions, which at the same time have a long service life.
- the electrodes consist of nickel or a nickel-containing alloy.
- Fig. 1 shows the cross-sectional view of an embodiment of the invention
- the capacitor according to the invention is a multilayer capacitor.
- the ceramic multilayer capacitor according to the invention comprises a ceramic dielectric 1, which consists of a multiplicity of oxidic dielectric layers with a thickness of not more than 5 ⁇ m, as well as a multiplicity of internal ones
- Electrodes 2 which are arranged one above the other in the form of a layer in the dielectric and which alternately extend to two opposite end faces of the dielectric.
- metallic contact electrodes 3 are provided as external connections, which are connected to the corresponding inner metallic electrodes.
- the production takes place according to the usual manufacturing techniques for ceramic capacitors, whereby numerous production variants are possible depending on the desired shape and dimensions, the desired accuracy and the field of application.
- Material for the ceramic dielectric is a dielectric ceramic composition is a barium-calcium-manganese-zirconium titanate as a base material having a composition of (Ba 1-x Ca x) y [Ti ⁇ -a- bc-dZr a Mn b Nb c Dy d ] ⁇ 3 with 0 ⁇ a ⁇ 0.25, c-0.5d ⁇ b ⁇ 0.015, 0.001 ⁇ c ⁇ O.Ol, 0.005 ⁇ d ⁇ 0.02, 0 ⁇ x ⁇ 0.20, 1.001 ⁇ y ⁇ 1.014, 0.0005 ⁇ z ⁇ 0.03 and contains SiO as a further additive in a quantity z with 0.0005 ⁇ z ⁇ 0.03mol / formula unit.
- the material selection for the electrodes is not particularly restricted, so that a metal or a combination of two or more commonly used metals can be used for this.
- the electrodes can consist of precious metals such as platinum, palladium, gold or silver. They can also contain chrome, zirconium, vanadium, zinc, copper, tin, lead, manganese, molybdenum, tungsten, titanium or aluminum. They preferably consist of a base metal selected from the group consisting of nickel, iron, cobalt and their alloys.
- the dielectric ceramic preparation can be produced by the customary methods for powder production, for example by the mixed oxide process, coprecipitation, spray drying, sol / gel process, hydrothermal process or alkoxide process.
- the mixed oxide process is preferred, in which the starting oxides or thermally decomposable compounds, such as carbonates, hydroxides, oxalates or acetates, are mixed and ground.
- the starting powder is then calcined at 1000 ° C to 1400 ° C.
- a suspension is first produced from the calcined powder for shaping, which in addition to the powder contains solvents, binders and, if appropriate, plasticizers and dispersing agents.
- the solvent can be, for example, water, an alcohol, toluene, xylene or trichlorethylene.
- Organic polymers such as polyvinyl alcohol, polyvinyl butyral or are usually used as binders
- Polymethyl methacrylate used. Glycerin, polyglycols or phthalates can be used as plasticizers. Dispersants such as alkylaryl polyether alcohols, polyethylene glycol ethyl ether or octylphenoxyethanol can also be added to the suspension.
- Green ceramic films are produced from the suspension by the preferred method using a film casting process.
- the suspension is poured onto a moving carrier surface.
- evaporation of the solvent leaves behind a more or less flexible film that is cut, printed with a metal paste in the pattern of the inner electrodes using the screen printing process and laminated.
- the individual multilayer capacitors are cut out of the laminate. These are first sintered in a weakly reducing atmosphere at temperatures between 1100 and 1400 ° C and then tempered in a weakly oxidizing atmosphere at temperatures between 600 and 1100 ° C. Nitrogen saturated with water vapor with an admixture of 0.5 to 2% by volume hydrogen can be used as the weakly reducing atmosphere, nitrogen with 5 ppm to 100 ppm oxygen as the weakly oxidizing atmosphere.
- a metal paste which contains, for example, nickel, is applied to the end faces of the capacitors and baked.
- the outer electrodes can also be applied by vapor deposition of a metal layer, for example made of gold.
- the capacitance C at 25 ° C. and the loss factor tan d are measured in a known manner.
- the service life is measured in an accelerated service life test (ALT) at 105 ° C and 27 V / ⁇ m.
- ALT accelerated service life test
- test pills with a diameter of 5 mm and a layer thickness of 0.05 mm contacted with electrodes made of CrNi and Au (50 nm) are produced, heated to 105 ° C. and a voltage of 27 V / ⁇ m is applied.
- the current is measured, from which the insulation resistance is calculated.
- the insulation resistance is initially high.
- the insulation resistance remains essentially constant at a high level.
- the insulation resistance begins to drop only after a certain characteristic degradation time.
- the leakage current increases by several orders of magnitude in a short time compared to the previous measurement time.
- the service life is defined as the time in which the leakage current has increased by a power of ten.
- Slurry was first prepared for the production of multilayer capacitors.
- high-purity BaCO 3 , TiO, CaC ⁇ 3 , ZrO 2 , MnO 2 , Nb O 5 , Dy O 3 and SiO according to the formula (Ba ⁇ -x Ca x ) y [Ti ⁇ -ab - c - d Zr a Mn b Nb c Dy d ] ⁇ 3 weighed together with z SiO according to Table 1, wet ground in a polypropylene bottle, dried and at 1000 ° C calcined in a corundum crucible for 4 h.
- the powder was then ground to an average grain size of 0.5 ⁇ m. Then the powder was mixed with solvent, dispersant and binder to form a slip.
- This slip was poured onto a carrier film using the Doktorblade method.
- the green ceramic film thus formed was dried, cut and printed with nickel paste for the electrode layers.
- the side surfaces were used for contacting
- the capacitors were coated with silver paste and the measurement of the dielectric properties gave values according to Table 2.
- compositions prepared according to Table 3.
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19952134A DE19952134A1 (de) | 1999-10-29 | 1999-10-29 | Kondensator mit BCZT-Dielektrikum |
| DE19952134 | 1999-10-29 | ||
| PCT/EP2000/008171 WO2001033587A1 (de) | 1999-10-29 | 2000-08-18 | Kondensator mit bczt-dielektrikum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1145261A1 true EP1145261A1 (de) | 2001-10-17 |
Family
ID=7927308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP00902669A Withdrawn EP1145261A1 (de) | 1999-10-29 | 2000-08-18 | Kondensator mit bczt-dielektrikum |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6437970B1 (de) |
| EP (1) | EP1145261A1 (de) |
| JP (1) | JP2003526201A (de) |
| KR (1) | KR20010100006A (de) |
| DE (1) | DE19952134A1 (de) |
| TW (1) | TW480503B (de) |
| WO (1) | WO2001033587A1 (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW492017B (en) * | 2000-06-29 | 2002-06-21 | Tdk Corp | Dielectrics porcelain composition and electronic parts |
| US6985347B2 (en) * | 2002-02-28 | 2006-01-10 | Greatbatch-Sierra, Inc. | EMI filter capacitors designed for direct body fluid exposure |
| KR100466073B1 (ko) * | 2002-05-24 | 2005-01-13 | 삼성전기주식회사 | 균일성 및 절연저항성이 증대된 유전체 조성물, 그제조방법 및 이를 이용한 적층 세라믹 콘덴서 |
| US6829136B2 (en) * | 2002-11-29 | 2004-12-07 | Murata Manufacturing Co., Ltd. | Dielectric ceramic, method for making the same, and monolithic ceramic capacitor |
| TWI240288B (en) * | 2003-01-31 | 2005-09-21 | Murata Manufacturing Co | Dielectric ceramic and the manufacturing method thereof, and the laminated ceramic condenser |
| US20060000542A1 (en) * | 2004-06-30 | 2006-01-05 | Yongki Min | Metal oxide ceramic thin film on base metal electrode |
| US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
| US20060099803A1 (en) * | 2004-10-26 | 2006-05-11 | Yongki Min | Thin film capacitor |
| US7365958B2 (en) * | 2004-10-27 | 2008-04-29 | Kyocera Corporation | Dielectric ceramics, multilayer ceramic capacitor and method for manufacturing the same |
| US20060091495A1 (en) * | 2004-10-29 | 2006-05-04 | Palanduz Cengiz A | Ceramic thin film on base metal electrode |
| US7375412B1 (en) | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
| US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
| US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
| US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
| US8623737B2 (en) * | 2006-03-31 | 2014-01-07 | Intel Corporation | Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same |
| WO2007139061A1 (ja) * | 2006-05-31 | 2007-12-06 | Murata Manufacturing Co., Ltd. | 半導体セラミック、積層型半導体セラミックコンデンサ、半導体セラミックの製造方法、及び積層型半導体セラミックコンデンサの製造方法 |
| JP4936825B2 (ja) * | 2006-08-02 | 2012-05-23 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
| WO2016021370A1 (ja) * | 2014-08-04 | 2016-02-11 | 株式会社村田製作所 | 積層セラミックコンデンサ |
| CN107244912B (zh) * | 2017-06-06 | 2020-07-14 | 中国科学院上海硅酸盐研究所 | 一种新型bczt基储能陶瓷材料及其制备方法和应用 |
| KR102815914B1 (ko) * | 2019-06-14 | 2025-06-02 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
| CN111153696A (zh) * | 2020-01-06 | 2020-05-15 | 天津大学 | 一种低温烧结的锆钛酸钡钙基无铅高储能效率陶瓷材料 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2941304A1 (de) * | 1978-10-13 | 1980-04-30 | Suwa Seikosha Kk | Dielektrikum, verfahren zu dessen herstellung, und dessen anwendung in kondensatoren fuer temperaturkompensationszwecke |
| JP3435607B2 (ja) * | 1992-05-01 | 2003-08-11 | 株式会社村田製作所 | 非還元性誘電体磁器組成物 |
| JP3362408B2 (ja) * | 1992-06-01 | 2003-01-07 | 株式会社村田製作所 | 誘電体磁器組成物 |
| DE19546237A1 (de) * | 1995-12-12 | 1997-06-19 | Philips Patentverwaltung | Vielschichtkondensator mit Dielektrikum aus modifiziertem Bariumstrontiumtitanat |
| DE19635406B4 (de) * | 1996-08-31 | 2005-09-01 | Philips Intellectual Property & Standards Gmbh | Kondensator und Vielschichtkondensator mit einem Dielektrium aus wolframhaltiger BCZT-Keramik |
| JP2000516190A (ja) * | 1997-05-30 | 2000-12-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | セラミック(多層)キャパシタ及び当該キャパシタに用いるセラミック組成物 |
| DE19737324A1 (de) * | 1997-08-28 | 1999-03-04 | Philips Patentverwaltung | Vielschichtkondensator mit silber- und seltenerdmetalldotiertem Bariumtitanat |
| JP2001506425A (ja) * | 1997-10-08 | 2001-05-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | セラミック多層キャパシタ |
| US6243254B1 (en) * | 1998-08-11 | 2001-06-05 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition and laminated ceramic capacitor using the same |
| JP2000143341A (ja) * | 1998-09-11 | 2000-05-23 | Murata Mfg Co Ltd | 誘電体セラミック組成物及び積層セラミック部品 |
| JP3509710B2 (ja) * | 1999-09-03 | 2004-03-22 | 株式会社村田製作所 | 誘電体セラミック組成物、および積層セラミックコンデンサ |
-
1999
- 1999-10-29 DE DE19952134A patent/DE19952134A1/de not_active Withdrawn
-
2000
- 2000-08-18 EP EP00902669A patent/EP1145261A1/de not_active Withdrawn
- 2000-08-18 WO PCT/EP2000/008171 patent/WO2001033587A1/de not_active Ceased
- 2000-08-18 US US09/869,387 patent/US6437970B1/en not_active Expired - Fee Related
- 2000-08-18 KR KR1020017008306A patent/KR20010100006A/ko not_active Withdrawn
- 2000-08-18 JP JP2001535192A patent/JP2003526201A/ja not_active Withdrawn
- 2000-11-08 TW TW089123608A patent/TW480503B/zh not_active IP Right Cessation
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0133587A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010100006A (ko) | 2001-11-09 |
| US6437970B1 (en) | 2002-08-20 |
| TW480503B (en) | 2002-03-21 |
| DE19952134A1 (de) | 2001-05-03 |
| JP2003526201A (ja) | 2003-09-02 |
| WO2001033587A1 (de) | 2001-05-10 |
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