EP1086353A1 - Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche - Google Patents
Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une trancheInfo
- Publication number
- EP1086353A1 EP1086353A1 EP99928616A EP99928616A EP1086353A1 EP 1086353 A1 EP1086353 A1 EP 1086353A1 EP 99928616 A EP99928616 A EP 99928616A EP 99928616 A EP99928616 A EP 99928616A EP 1086353 A1 EP1086353 A1 EP 1086353A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation
- wavelength
- analyte gas
- indicator species
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000012545 processing Methods 0.000 title claims abstract description 26
- 238000004140 cleaning Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 60
- 230000005855 radiation Effects 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000012491 analyte Substances 0.000 claims description 61
- 230000008569 process Effects 0.000 claims description 25
- 238000010521 absorption reaction Methods 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 229910004014 SiF4 Inorganic materials 0.000 claims description 17
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 13
- 230000003595 spectral effect Effects 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005070 sampling Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000013626 chemical specie Substances 0.000 claims description 5
- 238000004611 spectroscopical analysis Methods 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 238000002474 experimental method Methods 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000001307 laser spectroscopy Methods 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- -1 fluoride free radical Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 35
- 241000894007 species Species 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 17
- 238000004458 analytical method Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 229910001632 barium fluoride Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910002110 ceramic alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004476 mid-IR spectroscopy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/85—Investigating moving fluids or granular solids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
Definitions
- At least one radiation detector that is responsive to at least the first wavelength of radiation, and that is constructed for generating a first electrical signal that is indicative of the intensity of at least the first wavelength of radiation, the detector being operatively disposed to responsively intercept the at least one radiation beam exiting the gas flow conduit through the other of the windows;
- the means for generating (and modulating) the beam will comprise a Fourier Transform Infrared spectrometer.
- the apparatus may comprise separate means, such as a filter wheel, operatively disposed in the beam path for modulating the beam of radiation so as to discriminate radiation of different wavelengths, and most desirably the reaction site will comprise a processing chamber for fabrication of silicon semiconductor devices.
- Focusing mirrors and/or lenses will normally be used for collecting the radiation and directing it along the beam path through the conduit and upon the detector.
- Suitable materi- als for fabrication of the corrosion-resistant windows include calcium fluoride, potassium bromide, potassium fluoride, and (preferably) barium fluoride, and although a LiTa0 3 detector will generally be utilized other detectors, such as MCT, lead salt, and DTGS devices, may be employed as appropriate and as may be desired.
- FIG. 1 is a perspective view showing apparatus embodying the present invention, with associated components of a wafer processing tool;
- Figure 2 is an exploded perspective view, drawn to a reduced scale, of the apparatus of Figure 1.
- an infrared filter-based instrument measures the concentration of SiF 4 produced during cleaning of the chamber of a high density plasma, chemical vapor deposition silicon wafer processing system.
- Unique to the present invention is the recognition that SiF 4 serves as a highly effective and definitive indicator of the clean or etch end point; i.e., when the SiF 4 concentration decreases to an undetectable or threshold level the cleaning or etching end point is deemed to have been reached.
- filter spectrometry is employed to carry out the method of the invention.
- the filters used for the detection of SiF 4 are desirably found to have the following characteristics:
- Most mid-IR sources are hot, DC-powered glowers made from ceramic or metal alloy materials, which generally operate between 900° and 1500°C and (depending upon the size and temperature of the source) may require no cooling.
- One suitable source is a miniature tungsten carbide glower, operated at 10 volts and 1.8 amps and generating a surface temperature of between 1100° and 1200°C.
- the IR light may be collimated to increase light intensity passing through the sample and impinging upon the detector.
- a suitable front surface mirror design uses a one-inch, 90° off- axis aluminum parabola having an aluminum/MgF 2 surface coating; the IR source is placed at the focal point of the mirror for collimation.
- the IR source unit will usually be connected to one side of a conduit from the processing chamber.
- Optical transmission will most advantageously be accomplished using two 4-5 mm thick 25.4 mm BaF 2 windows, mounted on both sides of the flange; the base IR path length through the flange will typically be 3.12 inches.
- the radiation detector unit will be mounted to the adjacent side of the flange to complete the detection system.
- the IR light will be focussed, using a front surface mirror, and a mirror matching the source mirror will focus light into the detection housing. Modulation of the IR light is effect- ed using a chopper wheel measuring about 1.5 inch in diameter and spinning at 5 Hz, which wheel contains the two required optical filters (analyte and reference) , as described.
- a lithium tantalate (LiTa0 3 ) pyroelectric IR detector is employed, which is sensitive to thermal energy and is room temperature-compensated to correct for thermal drift. As the detector temperature changes (due to varying light intensity) , corresponding increases and decreases of polarization occur on the dielectric material, which in turn produce variations in charge flow.
- the detector functions most effectively at slower modulation frequencies, generally less than 10 Hz, and its window is designed to pass 80% of the IR light between 8 ⁇ m and 14 ⁇ m.
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8908998P | 1998-06-12 | 1998-06-12 | |
US89089P | 1998-06-12 | ||
US32952099A | 1999-06-10 | 1999-06-10 | |
US329520 | 1999-06-10 | ||
PCT/US1999/013339 WO1999064814A1 (fr) | 1998-06-12 | 1999-06-11 | Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1086353A1 true EP1086353A1 (fr) | 2001-03-28 |
EP1086353A4 EP1086353A4 (fr) | 2001-08-22 |
Family
ID=26780239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99928616A Withdrawn EP1086353A4 (fr) | 1998-06-12 | 1999-06-11 | Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1086353A4 (fr) |
JP (1) | JP2002517740A (fr) |
IL (1) | IL140055A0 (fr) |
WO (1) | WO1999064814A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4801709B2 (ja) * | 2003-03-14 | 2011-10-26 | キヤノンアネルバ株式会社 | Cvd装置を用いた成膜方法 |
JP4385086B2 (ja) | 2003-03-14 | 2009-12-16 | パナソニック株式会社 | Cvd装置のクリーニング装置およびcvd装置のクリーニング方法 |
JP4264479B2 (ja) * | 2003-03-14 | 2009-05-20 | キヤノンアネルバ株式会社 | Cvd装置のクリーニング方法 |
US7479454B2 (en) | 2003-09-30 | 2009-01-20 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
JP4884180B2 (ja) * | 2006-11-21 | 2012-02-29 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP2010190824A (ja) * | 2009-02-20 | 2010-09-02 | Shimadzu Corp | 半導体製造プロセス用吸光分析装置 |
DE102013101610B4 (de) * | 2013-02-19 | 2015-10-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Ferndetektion eines nicht infrarotaktiven Zielgases |
US10043641B2 (en) | 2016-09-22 | 2018-08-07 | Applied Materials, Inc. | Methods and apparatus for processing chamber cleaning end point detection |
TWI636253B (zh) * | 2017-01-05 | 2018-09-21 | 富蘭登科技股份有限公司 | 一種應用光譜儀來量測氣體解離狀態的量測裝置 |
WO2018222942A1 (fr) * | 2017-06-01 | 2018-12-06 | Aecom (Delaware Corporation) | Détection de gaz à l'état de traces par laser à cascade quantique pour la surveillance in situ, la régulation de processus et l'automatisation de la détermination de point final de nettoyage de chambre dans la production de semi-conducteurs |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0767254A1 (fr) * | 1995-09-25 | 1997-04-09 | Applied Materials, Inc. | Procédé et dispositif de nettoyage d'un tube à vide dans un système de CVD |
US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
WO1999015710A1 (fr) * | 1997-09-22 | 1999-04-01 | On-Line Technologies, Inc. | Procede et appareil de controle de cellule |
WO1999016108A2 (fr) * | 1997-09-23 | 1999-04-01 | On-Line Technologies, Inc. | Procede et appareil de detection et de controle des defauts |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095899A (en) * | 1976-03-01 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus for double-beaming in fourier spectroscopy |
-
1999
- 1999-06-11 WO PCT/US1999/013339 patent/WO1999064814A1/fr not_active Application Discontinuation
- 1999-06-11 EP EP99928616A patent/EP1086353A4/fr not_active Withdrawn
- 1999-06-11 JP JP2000553766A patent/JP2002517740A/ja active Pending
- 1999-06-11 IL IL14005599A patent/IL140055A0/xx unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
EP0767254A1 (fr) * | 1995-09-25 | 1997-04-09 | Applied Materials, Inc. | Procédé et dispositif de nettoyage d'un tube à vide dans un système de CVD |
WO1999015710A1 (fr) * | 1997-09-22 | 1999-04-01 | On-Line Technologies, Inc. | Procede et appareil de controle de cellule |
WO1999016108A2 (fr) * | 1997-09-23 | 1999-04-01 | On-Line Technologies, Inc. | Procede et appareil de detection et de controle des defauts |
Non-Patent Citations (2)
Title |
---|
N.HERSHKOWITZ AND H.L.MAYNARD: "Plasma characterization and process control diagnostics" JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, vol. 11, no. 4, 1 July 1993 (1993-07-01), pages 1172-1178, XP000403722 New York, NY (US) * |
See also references of WO9964814A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO1999064814A1 (fr) | 1999-12-16 |
IL140055A0 (en) | 2002-02-10 |
EP1086353A4 (fr) | 2001-08-22 |
JP2002517740A (ja) | 2002-06-18 |
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Owner name: MKS INSTRUMENTS, INC. |
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