EP1060369A1 - Systeme de mesure de birefringence - Google Patents

Systeme de mesure de birefringence

Info

Publication number
EP1060369A1
EP1060369A1 EP99934336A EP99934336A EP1060369A1 EP 1060369 A1 EP1060369 A1 EP 1060369A1 EP 99934336 A EP99934336 A EP 99934336A EP 99934336 A EP99934336 A EP 99934336A EP 1060369 A1 EP1060369 A1 EP 1060369A1
Authority
EP
European Patent Office
Prior art keywords
sample
retardance
path
light
birefringence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99934336A
Other languages
German (de)
English (en)
Other versions
EP1060369A4 (fr
Inventor
Baoliang Wang
Theodore C. Oakberg
Paul Kadlec
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hinds Instruments Inc
Original Assignee
Hinds Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hinds Instruments Inc filed Critical Hinds Instruments Inc
Priority claimed from PCT/US1999/003481 external-priority patent/WO1999042796A1/fr
Publication of EP1060369A1 publication Critical patent/EP1060369A1/fr
Publication of EP1060369A4 publication Critical patent/EP1060369A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00Measuring polarisation of light
    • G01J4/04Polarimeters using electric detection means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/23Bi-refringence

Definitions

  • This application relates to a system and method for precise measurement of linear birefringence properties of a transparent sample.
  • Birefringence means that different linear polarizations of light travel at different speeds through the material. These different polarizations are most often considered as two components of the polarized light, one being orthogonal to the other.
  • Birefringence is an intrinsic property of many optical materials, and may also be induced by external forces. Retardation or retardance represents the integrated effect of birefringence acting along the path of a light beam traversing the sample. If the incident light beam is linearly polarized, two orthogonal components of the polarized light will exit the sample with a phase difference, called the retardance.
  • the fundamental unit of retardance is length, such as nanometers (nm). It is frequently convenient to express retardance in units of phase angle (waves, radians, or degrees) which is proportional to the retardance (nm) divided by the wavelength of the light (nm).
  • An "average" birefringence for a sample is sometimes computed by dividing the measured retardation magnitude by the thickness of the sample.
  • the two orthogonal polarization components described above are parallel to two orthogonal axes, which are determined by the sample and are called the 2
  • fast axis and the “slow axis.”
  • the fast axis is the axis of the material that aligns with the faster moving component of the polarized light through the sample. Therefore, a complete description of the retardance of a sample along a given optical path requires specifying both the magnitude of the retardance and the relative angular orientation of the fast (or slow) axis.
  • the present invention is directed to a practical system and method for precisely measuring low-level birefringence properties of optical materials.
  • the retardance magnitude and orientation of the fast axis are precisely calculated.
  • the system permits multiple measurements to be taken across the area of a sample to detect and graphically display variations in the retardance across the sample area.
  • the system incorporates a photoelastic modulator for modulating polarized light that is then directed through a sample.
  • the beam propagating from the sample is separated into two parts. These 3 separate beam parts are then analyzed at different polarization directions, detected, and processed as distinct channels.
  • the detection mechanisms associated with each channel detect the light intensity corresponding to each of the two parts of the beam. This information is employed in an algorithm for calculating a precise, unambiguous measure of the retardance induced by the sample and the orientation of the fast axis.
  • the system includes a beam-splitting member and detector arrangement that permits splitting the beam into two parts with minimal contribution to the retardance induced in the beam.
  • the presence of any residual birefringence in the optical system is accounted for in a number of ways. For example, certain of the system components are arranged or mounted to minimize the chance that strain-induced birefringence may be imparted into the element. A reliable calibration technique is also provided.
  • the system permits the low-level birefringence measurements to be taken at any of a plurality of locations across the area of the sample.
  • the measurements are compiled in a data file and graphically displayed for quick analysis.
  • the optical components of the system are arranged to measure the birefringence properties of a sample that is reflectively coated on one side, thereby permitting measurement of birefringence properties even though the sample is not completely light transmissive.
  • Fig. 1 is a diagram of a preferred embodiment of the present system showing the preferred arrangement of the optical components.
  • Fig. 2 is a block diagram of the processing components of the present system.
  • Fig. 3 is a perspective view of detection and beam-splitting components of the system.
  • Fig. 4 is a cross-sectional view of one of the detector assemblies of the system.
  • Fig. 5 is a perspective view of the primary components of a photoelastic modulator that is incorporated in the present system.
  • Fig. 6 is a drawing depicting a graphical display provided by the system of the present invention.
  • Fig. 7 is a diagram of an alternative embodiment of the present invention.
  • Fig. 8 is a graph that plots, for a selected retardance, the oscillation amplitude of the polarization modulator against a number of source-light wavelengths, for a polarization modulator that employs a preferred type of optical element.
  • 5 Fig. 9 is a graph, based in part on the data shown in Fig. 8, that represents a correction factor that may be applied to convert the retardance value of an optical-material sample as measured at one source-light wavelength to the retardance value that would occur in the sample at another source-light wavelength.
  • Fig. 10 is a graph that plots, for a selected retardance, the oscillation amplitude of the polarization modulator against a number of source-light wavelengths, for a polarization modulator that employs an alternative type of optical element.
  • Fig. 11 is a another graph, like Fig. 9, that represents a correction factor that may be applied to convert the retardance value of an optical-material sample as measured at one source-light wavelength to the retardance value that would occur in the sample at another source-light wavelength.
  • FIG. 1 depicts the primary optical components of a system made in accordance with the present invention.
  • the components include a HeNe laser as a light source 20 that has a wavelength of 632.8 nanometers (nm).
  • the beam "B" emanating from the source has a cross sectional area or “spot size" of approximately 1 millimeter (mm).
  • the source light beam "B" is directed to be incident on a polarizer 22 that is oriented with its polarization direction at +45° relative to a baseline axis.
  • polarizer 22 is preferred. 6 It is also preferred that the polarizer 22 be secured in a precision, graduated rotator.
  • the polarized light from the polarizer 22 is incident on the optical element 25 of a photoelastic modulator 24 (Figs. 1 and 5).
  • the photoelastic modulator (hereafter referred to as a "PEM") is one manufactured by Hinds Instruments, Inc., of Hillsboro, Oregon, as a low birefringence version of Model PEM-90 I/FS50. It is noteworthy here that although a PEM is preferred, one could substitute other mechanisms for modulating the polarization of the source light.
  • the PEM has its birefringent axis oriented at 0° and is controlled by a
  • controller 84 that imparts an oscillating birefringence to the optical element 25, preferably at a nominal frequency of 50 kHz.
  • the controller 84 drives two quartz transducers 29 between which the optical element 25 is bonded with an adhesive.
  • the oscillating birefringence of the PEM introduces a time-varying phase difference between the orthogonal components of the polarized light that propagates through the PEM.
  • the phase difference is the retardation introduced by the PEM.
  • the retardation is measurable in units of length, such as nanometers.
  • the PEM is adjustable to allow one to vary the amplitude of the retardation introduced by the PEM. In the case at hand, the retardation amplitude is selected to be 0.383 waves (242.4 nm).
  • the beam of light propagating from the PEM is directed through the transparent sample 26.
  • the sample is supported in the path of the beam by a 7 sample stage 28 that is controllable for moving the sample in a translational sense along orthogonal (X and Y) axes.
  • the stage may be any one of a number of conventional designs such as manufactured by THK Co. Ltd., of Tokyo, Japan as model KR2602 A-250.
  • the motion controllers of the sample stage 28 are driven to enable scanning the sample 26 with the beam to arrive at a plurality of retardance and orientation measurements across the area of the sample.
  • the sample 26 will induce retardance into the beam that passes through it. It is this retardance value that is determined in accordance with the processing provided by the present invention, as explained more below.
  • the present system is especially adapted to determine low levels of retardance. Low retardance levels are determined with a sensitivity of less than ⁇ 0.01 nm.
  • the beam "Bi" that passes out of the sample is separated into two parts having different polarization directions and thereby defining two channels of information for subsequent processing.
  • a beam-splitting mirror 30 there is located in the path of that beam (hereafter referred to as the incidence path) a beam-splitting mirror 30. Part “B1" of the beam “Bi” passes completely through the beam-splitting mirror 30 and enters a detector assembly 32 for detection. 8
  • Fig. 3 depicts a preferred mechanism for supporting the beam-splitting mirror 30.
  • the mirror 30 is seated in the central aperture of a housing 31 that is rigidly supported by an arm 33 to a stationary vertical post 36.
  • the post 36 is employed for supporting all of the optical components of the system so that the paths of the light are generally vertical.
  • the diameter of the mirror 30 is slightly less than the diameter of the housing aperture.
  • the aperture is threaded except for an annular shoulder that projects into the lowermost end of the aperture to support the periphery of the flat, round mirror 30.
  • a retainer ring 40 is threaded into the aperture to keep the mirror in place in the housing 31 against the shoulder.
  • the mirror 30 is preferably made of Schott Glass type SF-57 glass. This glass has an extremely low (near zero) stress-optic coefficient.
  • the retainer ring 40 is carefully placed to secure the mirror without stressing the glass.
  • flexible adhesive may be employed to fasten the mirror. No setscrews or other stress-inducing mechanisms are employed in mounting the mirror.
  • the beam "B1" enters a detector 44, the particulars of which are described more below.
  • the reflective surface 35 of the beam-splitting mirror 30 faces upwardly, toward the sample 26.
  • the mirror is mounted so that the incidence path (that is, the optical path of the beam "Bi" propagating from the sample 26) is nearly normal to the reflective surface 35. This orientation is preferred for substantially eliminating retardance that would otherwise be introduced by an optical component that is called on to redirect the path of the beam by more than a few degrees.
  • Fig. 1 shows as “A” the angle made between the beam “Bi” travelling along the incidence path and the beam part “Br” that is reflected from the mirror 30.
  • Angle “A” is shown greatly enlarged for illustrative purposes. In a preferred embodiment, this angle is greater than 0° but less than 10°. Most preferred is an
  • the reflected part of the Beam “Br” is incident upon another detector assembly 50.
  • That assembly 50 is mounted to the post 36 (Fig. 3) and configured in a way that permits the assembly to be adjacent to the incident beam "Bi” and located to receive the reflected beam "Br.”
  • the assembly 50 includes a base plate 52 that is held to the post 36 by an arm 54.
  • the base plate includes an inner ring 57 that is rotatably 10 mounted to the base plate and has a large central aperture 56 that is countersunk to define in the bottom of the plate 52 an annular shoulder 58.
  • the detector components are compactly integrated and contained in a housing 60 that has a flat front side 62.
  • the remainder of the side of the housing is curved to conform to the curvature of the central aperture 56 of the base plate 52.
  • this portion of the housing 60 includes a stepped part 64 that permits the curved side of the housing to fit against the base plate 52 and be immovably fastened thereto.
  • a sub-housing 70 is fastened inside of the detector components housing 60 against the flat side 62.
  • the sub-housing 70 is a generally cylindrical member having an aperture 72 formed in the bottom. Just above the aperture 72 resides a compact, Glan-Taylor type analyzer 74 that is arranged so that its polarization direction is 0°, parallel with that of the PEM 24.
  • the detector is preferably a photodiode that is stacked above the filter.
  • the photodiode detector 76 is the preferred detection mechanism and produces as output a current signal representative of the time varying intensity of the received laser light.
  • the laser light is that of the beam "B2," which is the reflected part "Br" of the beam that propagated through the sample 26.
  • the photodiode output is delivered to a preamplifier carried on an associated printed circuit board 78 that is mounted in the housing 60.
  • the preamplifier 75 (Fig. 2) provides output to a phase sensitive device (preferably a lock-in amplifier 80) in the form of a low-impedance intensity signal V A c, and a DC intensity signal V D c, which represents the time average of the detector signal.
  • the other detector assembly 32 (Fig. 3) to which is directed the non-reflected part "B1 " of the beam “Bi” is, except in two respects, the same construction as the just described assembly 50.
  • the detector assembly 32 is mounted to the post 36 in an orientation that is generally inverted relative to that of the other detector assembly 50.
  • the analyzer 42 of that assembly 32 is arranged so that its polarization direction is oblique to the polarization direction of the analyzer 74 in the other detector assembly 50.
  • the analyzer 42 is positioned with its polarization direction at -45°. The preferred analyzer position is established by rotating the
  • the photodiode of detector assembly 32 produces as output a current signal representative of the time varying intensity of the received laser light.
  • the laser light is that of the beam “B1 ,” which is the non-reflected part of the beam “Bi” that propagated through the sample 26.
  • the photodiode output of the detector assembly 32 is delivered to a preamplifier 79, which provides its output to the lock-in amplifier 80 (Fig. 2) in the form of a low-impedance intensity signal V A c, and a DC intensity signal VDC which represents the time average of the detector signal. 12
  • the lock-in amplifier 80 is provided with two channels of input: channel 1 corresponding to the output of detector assembly 32, and channel 2 corresponding to the output of detector assembly 50.
  • the intensity information received by the lock-in amplifier on channel 1 -because of the arrangement of the -45° analyzer 42- relates to the 0° or 90° component of the retardance
  • this information is combined in an algorithm that yields an unambiguous determination of the magnitude of the overall retardance induced in the sample (or a location on the sample) as well as the orientation of the fast axis of the sample (or a location on the sample).
  • the lock-in amplifier 80 may be one such as manufactured by EG&G Inc., of Wellesley, Massachusetts, as model number 7265.
  • the lock-in amplifier takes as its reference signal 82 the oscillation frequency applied by the PEM controller 84 to the transducers 29 that drive the optical element 25 of the PEM 24.
  • the lock-in amplifier 80 communicates with a digital computer 90 via an RS232 serial interface.
  • the computer 90 obtains the values of channel 1.
  • the computer next obtains the values of channel 2.
  • the intensity signals on the detectors in channels 1 and 2 are derived as follows: 13
  • I M l+cos(4 )sin : cos ⁇ -cos 2 cos ⁇ + cos(2p)sin ⁇ 5 sin ⁇
  • I ch2 l + sin(4 )sin 2 cos ⁇ + sin(2p) sin£sin ⁇
  • is the PEM's time varying phase retardation
  • is the magnitude of the
  • J 0 is the 0 th order of the Bessel function
  • J 2 ⁇ is the (2k)th order of the Bessel function
  • the 1 F signal is determined using the lock-in amplifier 80 that is referenced at the PEM's first harmonic.
  • the lock-in amplifier will exclude the contributions from all harmonics other than 1 F.
  • the output from the lock-in amplifier 80 for the two channels is:
  • the ratio of the 1 F V A c signal to the V c signal is used. (Alternatively, similar techniques can be employed, such as dynamically normalizing the DC signal to unity.) Exclusion of the cos ⁇ terms in equation (1 ) can severely affect the V DC
  • equation (1 ) is approximately equal to cos ⁇ for small ⁇ .
  • R chl and R c/l2 are experimentally determined quantities from the two channels.
  • Equations (8) are specifically developed for small linear birefringence.
  • the approximation of sin ⁇ ⁇ ⁇ used in deriving equations (8) has an error of -1% for ⁇
  • the present system employs a PEM 24 (Fig. 5) that is specially configured to eliminate residual birefringence that may be attributable to supporting the optical element 25 of the PEM in the housing 27 (shown in dashed lines of Fig. 5).
  • the bar-shaped optical element is bonded at each end to a transducer 29.
  • Each transducer 29 is mounted to the PEM housing 27, as by supports 23, so that the optical element is essentially suspended, thus free from 17 any residual birefringence that may be attributable to directly mounting the oscillating optical element 25 to the PEM housing 27.
  • the system offset is obtained by making a measurement without a sample in place.
  • the results from both channels 1 and 2 are the system offsets at 0° and
  • the equation bearing the term p ⁇ /4 corresponds to channel 2 (the 0° analyzer 74).
  • the system offsets are corrected for both channels when a sample is measured.
  • the system offsets for channels 1 and 2 are constants (within the measurement 18 error) at a fixed instrumental configuration. Barring any changes in the components of the system, or in ambient pressure or temperature, the system should remain calibrated.
  • this procedure will provide a method of self calibration of the system. It is, however, prudent to compare the system measurement of a sample with the measurement obtained using other methods.
  • One such calibration sample may be provided by a compound zero-order waveplate.
  • the compound waveplate comprises two multiple-order waveplates (e.g., quartz) or two zero-order waveplates (e.g., mica) selected to have a very small retardance difference between them (e.g., less than 0.03 wavelengths). They would be combined with their axes at right angles so that the retardance of one is subtracted from the other to produce the sought-after low-level retardance, compound zero-order waveplate(s) for use in calibration.
  • Such a configuration will provide a uniform retardance across the surface with a low temperature coefficient of retardance.
  • the magnitude of the measured, sample-induced retardance will be independent of the sample's angular orientation. This angular independence may be lost if: (1) the polarization directions of the polarizer 22 and analyzers 42, 74 are not precisely established, and (2) the maximum peak retardance of the PEM is not precisely calibrated. What follows is a description of correction techniques for eliminating the just mentioned two sources of possible "angular dependence" errors. 19 As respects the precise establishment of the polarization directions of the polarizer 22 and analyzers 42, 74, the correction technique applied to the polarizer 22 involves the following steps:
  • V D c signals with a precision voltmeter while the PEM retardance is changed in the selected vicinity.
  • the motion controllers of the sample stage 28 are controlled in a conventional manner to incrementally move the sample 26 about orthogonal (X, Y) axes, thereby to facilitate a plurality of measurements across the area of a sample.
  • the spatial resolution of these measurements can be established as desired (e.g., 3.0 mm), provided that the sought-after resolution is not finer than the cross section of the beam that strikes the sample.
  • the cross sectional area or "spot size" of the laser beam may be minimized, if necessary, by the precise placement of a convex lens with an appropriate focal length, such as shown as line 96 in Fig. 1 , between the light source 20 and the polarizer 22.
  • the lens could be, for example, removably mounted to the top of the polarizer 22.
  • the lens 96 would be in place in instances where a very small spot size of, for example, 0.1 mm (and corresponding spatial resolution) is desired for a particular sample.
  • a lens or lens system such as provided by a conventional beam expander may be introduced into the system between the laser 20 and the polarizer 22. 21
  • the measured retardance values can be handled in a number of ways.
  • the data collected from the multiple scans of a sample are stored in a data file and displayed as a plot on a computer display 92.
  • One such plot 100 is shown in Fig. 6.
  • Each cell 102 in a grid of cells in the plot indicates a discrete location on the sample.
  • the magnitude of the retardance is depicted by color coding.
  • different shadings in the cells represent different colors.
  • Fig. 6 only a few different colors and cells are displayed for clarity. It will be appreciated, however, that a multitude of cells can be displayed.
  • the legend 104 on the display correlates the colors (the color shading is omitted from the legend) to a selectable range of retardance values within which the particular measurement associated with a cell 102 falls.
  • a line 106 located in each cell 102 extends across the center of each cell and presents an unambiguous visual indication of the full physical range (-90° to +90°) of the orientation of the fast axis of the sample at each sampled location.
  • the orientation of the fast axis and the retardance magnitude measurements are simultaneously, graphically displayed for each location.
  • the just described retardance measurements are displayed for each cell as soon as that cell's information is computed.
  • the operator observes the retardance value of each cell, without the need to wait until the retardance values of all of the cells in the sample have been calculated. This is advantageous for maximizing throughput in instances where, for example, an operator is charged 22 with rejecting a sample if the birefringence value of any part of the sample exceeds an established threshold.
  • a contour line placed there as an example of a contour line that follows a common measured range of retardation magnitude is also illustrated in Fig. 6.
  • a contour line placed there as an example of a contour line that follows a common measured range of retardation magnitude. For simplicity, only a single one of several contour lines is shown for the low- resolution plot of Fig. 6.
  • Another approach to graphically displaying the retardance magnitude and orientation information provided by the present system is to depict the retardance magnitude for a plurality of locations in a sample via corresponding areas on a three-dimensional contour map.
  • the associated orientations are simultaneously shown as lines or colors in corresponding cells in a planar projection of the three dimensional map.
  • Fig. 7 depicts an arrangement for measuring retardance magnitude and orientation in a sample 124 that is reflectively coated on one side. Apart from the different sample 124 and the relative locations of the optical components, the components of the system of Fig. 7 match those of the embodiment of Fig. 1 and thus carry the same reference numbers, with a few exceptions as noted below. 23
  • the sample 124 (Fig. 7) is coated on one side with a reflective surface, such as very thin layer of chromium.
  • the sample is placed on the sample stage with the coated surface on the bottom.
  • the beam "B" is directed to pass through the sample 124.
  • the sample stage is slightly tilted (or, alternatively, the sample is secured in a tilted holder mounted to a flat stage) so that the beam reflects from the coated surface toward the beam-splitting mirror 30 and detector assembly 32, which are, in this embodiment, supported above the sample stage 28 as shown.
  • these components are located as near as practical to the beam "B” so that the beam “Bi" reflected from the sample 124 is angled "R" only slightly away (for example 2° to 5°) from the beam "B" propagating from the
  • the beam reflected by the sample corresponds, from a processing standpoint, to the beam "Bi" impinging on the mirror 30 of the Fig. 1 embodiment.
  • the processing of the two beam parts "B1" and “B2" are the same for both embodiments.
  • the measured retardance magnitude of the sample 124 will necessarily comprise two passes of the beam through the sample. Therefore the measured value will be divided by two.
  • the housing 31 may be modified to support a mirror that is semi-circular in shape such that the flat edge of the mirror is located adjacent to the beam "B."
  • the beam "Bi" therefore, could be reflected 24 to a location on the mirror that is very close to that edge, hence to the beam "B" as desired.
  • a second lock-in amplifier may be employed (one for each channel) for increasing the speed with which data is provided to the computer.
  • sequential measurement using a single detector may be employed for measuring the intensity signal in two different polarization directions and thereby defining two channels of information for subsequent processing.
  • a single detector assembly could be employed. This dispenses with the second detector assembly and the beamsplitter mirror. Such a set-up, however, would require either rotating the analyzer or switching between two polarizers of different orientations to ensure unambiguous retardance measurements and to ascertain the orientation of the fast axis.
  • the sample and the analyzer may be rotated by 45 9 .
  • the preferred embodiment of the present invention uses a HeNe laser for a stable, pure, monochromatic light source.
  • the HeNe laser produces a beam having a 632.8 nm wavelength.
  • retardance magnitude measurements using light sources having other frequencies are desired.
  • Fig. 8 charts experimental results showing the oscillation amplitude required to produce, via the PEM, a selected peak retardation (such as half-wave) plotted against different source wavelengths for a PEM that employs a fused silica type optical element.
  • Fig. 9 is developed by using, in part, the plot of Fig. 8 to produce a curve that represents a correction factor that is applied to the retardance magnitude value of the sample as measured at one wavelength (such as the 632.8 nm wavelength of the HeNe laser), thereby to arrive at (either directly or by extrapolation) the retardance magnitude that would occur in the sample at other wavelengths, such as a UV wavelength of 157 nm.
  • the data in Fig. 9 was generated from an experiment involving a PEM having a fused silica optical element for use with samples of similar fused silica material.
  • Fig. 10 charts experimental results showing the oscillation amplitude required to produce, via the PEM, a selected peak retardation (such as half-wave) plotted against different source wavelengths for a PEM that employs a calcium fluoride optical element.
  • Fig. 11 is developed by using the plot of Fig. 10 to produce a curve that represents a correction factor that is applied to the retardance magnitude as measured at one wavelength (such as the 633 nm wavelength of the HeNe 26 laser), thereby to arrive at (either directly or by extrapolation) the retardance magnitude that would occur in the sample at other wavelengths, such as a UV wavelength of 157 nm.
  • the data in Fig. 11 was generated from an experiment involving a PEM having a calcium fluoride optical element for use with samples of similar calcium fluoride material.
  • the stress-optic coefficient of the sample material being tested which coefficient is known as a function of wavelength.
  • the retardance magnitudes measured at two different wavelengths are directly proportional to the stress-optic coefficient of the material.

Abstract

L'invention concerne un système et un procédé pratiques de mesure précise de propriétés de biréfringence à faible niveau (retard et orientation d'axe rapide) de matières optiques (26). Le système permet d'effectuer plusieurs mesures dans une zone d'un échantillon pour détecter et afficher (100) graphiquement des variations de propriétés de biréfringence dans la zone d'échantillon. Dans un mode de réalisation préféré, le système comprend un modulateur photoélastique (24) permettant de moduler une lumière polarisée qui est alors orientée à travers un échantillon (26). Le faisceau ('Bi') se propageant à partir de l'échantillon est séparé en deux parties, une partie ('B1') possédant un sens de polarisation différent du sens de polarisation de l'autre partie ('B2') du faisceau. Ces parties de faisceau séparées sont alors traitées comme des canaux distincts. Des mécanismes de détection (32, 50) associés à chaque canal détectent l'intensité de lumière variant avec le temps correspondant à chaque partie du faisceau. On combine ces informations pour calculer une mesure précise du retard subi par l'échantillon ainsi que l'orientation d'axe rapide de l'échantillon.
EP99934336A 1998-02-20 1999-02-17 Systeme de mesure de birefringence Withdrawn EP1060369A4 (fr)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US7533598P 1998-02-20 1998-02-20
US75335P 1998-02-20
US8416898P 1998-05-04 1998-05-04
US84168P 1998-05-04
US9993198P 1998-09-11 1998-09-11
US99931P 1998-09-11
US12022499P 1999-02-15 1999-02-15
PCT/US1999/003481 WO1999042796A1 (fr) 1998-02-20 1999-02-17 Systeme de mesure de birefringence
US120224 2002-04-10

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EP1060369A1 true EP1060369A1 (fr) 2000-12-20
EP1060369A4 EP1060369A4 (fr) 2005-01-19

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EP (1) EP1060369A4 (fr)
JP (1) JP4629869B2 (fr)
CA (1) CA2319729A1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2297672A1 (fr) * 1997-07-28 1999-02-04 Hinds Instruments, Inc. Mesure du retard d'une lame d'onde a l'aide d'un modulateur photoelastique
US6867863B1 (en) * 1999-03-31 2005-03-15 Hinds Instruments Integrated diagnostic for photoelastic modulator
US6697157B2 (en) * 1999-05-24 2004-02-24 Hinds Instruments Birefringence measurement
JP2001228034A (ja) * 2000-02-14 2001-08-24 Fuji Electric Co Ltd ディスク基板の内部応力状態の測定法
US6583875B1 (en) * 2000-05-19 2003-06-24 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
EP1358443A2 (fr) * 2001-01-22 2003-11-05 Jonathan E. Roth Procede et appareil de tomographie par coherence optique sensible a la polarisation
JP4249608B2 (ja) * 2001-06-18 2009-04-02 ハインズ インスツルメンツ インコーポレイテッド 深紫外波長での複屈折測定
DE10329360B4 (de) * 2002-07-01 2008-08-28 Canon K.K. Doppelbrechungsmessgerät, Spannungsentfernungseinrichtung, Polarimeter und Belichtungsgerät
JP4455024B2 (ja) 2002-12-13 2010-04-21 キヤノン株式会社 複屈折測定装置
EP1573287A4 (fr) * 2002-12-20 2009-11-11 Hinds Instruments Inc Mesure de birefringence hors plan
US7025501B2 (en) * 2003-06-18 2006-04-11 J. A. Woollam Co., Inc Tracking temperature change in birefringent materials
US7224457B2 (en) * 2003-09-25 2007-05-29 Georgia Tech Research Corporation Performing retardation measurements
US7075648B2 (en) * 2003-09-25 2006-07-11 Georgia Tech Research Corporation Performing retardation measurements
US7233395B2 (en) * 2003-09-25 2007-06-19 Georgia Tech Research Corporation Performing retardation measurements
JP3971363B2 (ja) * 2003-10-07 2007-09-05 株式会社東芝 露光装置及び露光装置の光学系のミュラー行列を測定する方法
US7180602B2 (en) * 2003-12-11 2007-02-20 Nuonics, Inc. Agile spectral interferometric microscopy
CN101076714B (zh) 2004-10-25 2012-01-11 海因兹仪器公司 聚合物薄膜等的双折射测量
US7757737B2 (en) * 2005-02-03 2010-07-20 Kuraray Co., Ltd. Film pasting device
US7412175B2 (en) * 2005-06-20 2008-08-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Interferometric polarization control
DE102006038643B4 (de) * 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
WO2010005874A1 (fr) * 2008-07-08 2010-01-14 Hinds Instruments, Inc. Mesure de biréfringence à haut rendement
JP6084507B2 (ja) * 2012-04-16 2017-02-22 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP2016053478A (ja) * 2014-09-02 2016-04-14 株式会社東芝 相分離観測方法、相分離観測装置、及びアニール装置
US20160231176A1 (en) * 2015-02-05 2016-08-11 Polarization Solutions, Llc Light irradiation device having polarization measuring mechanism
KR102272149B1 (ko) 2020-02-26 2021-07-02 주식회사 토모큐브 3차원 굴절률 텐서의 측정 방법 및 장치
KR20230030346A (ko) 2021-08-25 2023-03-06 삼성전자주식회사 편광 계측 장치 및 편광 계측 장치를 이용한 반도체 소자 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668086A (en) * 1985-05-20 1987-05-26 Salomon Redner Stress and strain measuring apparatus and method
US4850710A (en) * 1986-09-26 1989-07-25 Orc Manufacturing Co., Ltd. Method of measuring and displaying double refraction occurring in a material to be measured
US5319194A (en) * 1992-03-10 1994-06-07 Matsushita Electric Industrial Co., Ltd. Apparatus for measuring birefringence without employing rotating mechanism

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251080A1 (de) * 1972-10-18 1974-05-02 Max Planck Gesellschaft Michelson-interferometer
US3902805A (en) 1973-09-17 1975-09-02 Vishay Intertechnology Inc Automatic birefringence measuring apparatus
US4400062A (en) 1979-09-11 1983-08-23 Sony Corporation Wave plate retarder
US4362387A (en) 1980-08-22 1982-12-07 Rockwell International Corporation Method and apparatus for measuring visibility from the polarization properties of the daylight sky
US4480916A (en) 1982-07-06 1984-11-06 The United States Of America As Represented By The Secretary Of The Navy Phase-modulated polarizing interferometer
US4681450A (en) 1985-06-21 1987-07-21 Research Corporation Photodetector arrangement for measuring the state of polarization of light
US4801798A (en) 1987-12-14 1989-01-31 Eastman Kodak Company Method and apparatus for measuring optical retardation in transparent materials
US4904931A (en) 1988-09-28 1990-02-27 Westinghouse Electric Corp. Electro-optical voltage measuring system incorporating a method and apparatus to derive the measured voltage waveform from two phase shifted electrical signals
US4973163A (en) 1988-10-08 1990-11-27 Kanzaki Paper Manufacturing Co., Ltd. Method for measuring birefringence
US5072111A (en) 1990-09-04 1991-12-10 The United States Of America As Represented By The Secretary Of The Army Optical time domain reflectometer calibration system
JPH0518858A (ja) 1991-07-12 1993-01-26 Casio Comput Co Ltd 薄膜の光学特性測定方法
US5187983A (en) * 1991-09-04 1993-02-23 Universite Du Quebec A Hull Fiber-optic strain gauge manometer
US5268741A (en) 1992-01-31 1993-12-07 Hewlett-Packard Company Method and apparatus for calibrating a polarization independent optical coherence domain reflectometer
US5532823A (en) 1993-03-08 1996-07-02 Matsushita Electric Industrial Co., Ltd. Method of measuring optical characteristics of liquid crystal cells, measurement equipment therefor and method for manufacturing liquid crystal devices
FR2714970B1 (fr) 1994-01-12 1996-03-29 Centre Nat Rech Scient Ellipsomètre spectroscopique modulé.
US5457536A (en) 1994-04-04 1995-10-10 California Institute Of Technology Polarization modulation laser scanning microscopy
US5652673A (en) 1994-06-24 1997-07-29 Hinds Instruments, Inc. Elimination of modulated interference effects in photoelastic modulators
GB9518100D0 (en) 1995-09-05 1995-11-08 Infrared Eng Calibration standard for infrared absorption gauge
US5825492A (en) 1996-04-26 1998-10-20 Jaton Systems Incorporated Method and apparatus for measuring retardation and birefringence
US5917598A (en) * 1995-12-05 1999-06-29 Jatom Systems Incorporated Method and apparatus for measuring the orientation of optical axes
US5792049A (en) 1996-01-17 1998-08-11 Spectrx, Inc. Spectroscopic system with disposable calibration device
SE506286C2 (sv) 1996-05-09 1997-12-01 Ifunga Test Equipment Bv Anordning för mätning av dubbelbrytning i en optisk databärare
US6055053A (en) 1997-06-02 2000-04-25 Stress Photonics, Inc. Full field photoelastic stress analysis
US5956147A (en) 1997-06-13 1999-09-21 Lockheed Martin Energy Research Corporation Two modulator generalized ellipsometer for complete mueller matrix measurement
US5798837A (en) 1997-07-11 1998-08-25 Therma-Wave, Inc. Thin film optical measurement system and method with calibrating ellipsometer
US5864403A (en) 1998-02-23 1999-01-26 National Research Council Of Canada Method and apparatus for measurement of absolute biaxial birefringence in monolayer and multilayer films, sheets and shapes
US6268914B1 (en) * 2000-01-14 2001-07-31 Hinds Instruments, Inc. Calibration Process For Birefringence Measurement System

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668086A (en) * 1985-05-20 1987-05-26 Salomon Redner Stress and strain measuring apparatus and method
US4850710A (en) * 1986-09-26 1989-07-25 Orc Manufacturing Co., Ltd. Method of measuring and displaying double refraction occurring in a material to be measured
US5319194A (en) * 1992-03-10 1994-06-07 Matsushita Electric Industrial Co., Ltd. Apparatus for measuring birefringence without employing rotating mechanism

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO9942796A1 *

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EP1060369A4 (fr) 2005-01-19
JP2002504673A (ja) 2002-02-12

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