EP1042794A1 - Procede de production d'une couche poreuse par un processus de gravure electrochimique - Google Patents

Procede de production d'une couche poreuse par un processus de gravure electrochimique

Info

Publication number
EP1042794A1
EP1042794A1 EP98966576A EP98966576A EP1042794A1 EP 1042794 A1 EP1042794 A1 EP 1042794A1 EP 98966576 A EP98966576 A EP 98966576A EP 98966576 A EP98966576 A EP 98966576A EP 1042794 A1 EP1042794 A1 EP 1042794A1
Authority
EP
European Patent Office
Prior art keywords
etching
porous layer
porous
producing
etching rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98966576A
Other languages
German (de)
English (en)
Inventor
Rüdiger ARENS-FISCHER
Michael Berger
Michael Krüger
Markus THÖNISSEN
Hans LÜTH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of EP1042794A1 publication Critical patent/EP1042794A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Definitions

  • the invention relates to a method for producing a porous layer using an electrochemical etching process according to the preamble of claim 1. Furthermore, the invention relates to an optical component according to claim 5.
  • PS porous silicon
  • One area of application for PS is the use in optical components. It is known as prior art, for example from DE 4319413.3-33 or Thin solid films 276 (1996), 143-146, to produce waveguides, transmission filters, reflectors or anti-reflection coatings using layer systems made of PS.
  • the optical properties of the layer systems can be specifically changed by the sequence of individual layers with different optical thicknesses.
  • the optical thickness of these individual layers is influenced by their porosity and thickness.
  • the Porosi- Tat and thickness is controlled for a given doping by the current density or by the duration of the electrochemical etching. It is only with the aid of the duration of the etching that it is possible, given the substrate and the current density, to set the desired layer thickness.
  • the area to be etched must be defined to form such a structure.
  • Etching mask leads to a curvature of the PS / substrate interface during manufacture (FIG. 1).
  • strips with a length of 1 cm and a width which corresponded to their distance from the next strip were examined.
  • FIG. 1 there are two curvatures. A curvature within a strip and a curvature across all strips. These curvatures result in an inhomogeneity of the layers (see FIG. 5).
  • the etching for porosidization of the material is carried out in a manner known per se. It was recognized here to form an etching mask of suitable geometry with behavior tailored to the desired deep etching and to use it in the method according to the invention.
  • the simultaneous production of pixels within a porosidizable structure with different properties is possible in one operation if the etching rate of each pixel is not only determined by the current density applied from the outside, but also by the different Environment of the pixel is determined.
  • the surroundings of the pixels can be designed by the etching mask in such a way that the pixels have different current densities and thus different etching rates. In this way the desired different properties can be achieved.
  • the method according to the invention enables several, in particular many, work steps to be replaced by a single step of suitable design.
  • Another advantage of this method is that a continuous change in the properties of a porous layer is also possible. This process can be used for all electrochemical etching processes.
  • the method for producing a porous layer using an electrochemical etching process includes the use of an etching mask corresponding to the desired course of the deep etching rate.
  • the method according to the invention is partially formed by selecting a wedge-shaped etching mask to form a continuous course of the deep etching rate.
  • the method according to the invention is advantageously embodied in that an etching mask having one or more wedge-shaped step-shaped structures is selected to form a discrete course of the deep etching rate.
  • the inventive method is advantageously carried out in that silicon, germanium or aluminum is selected as the starting material for the porous layer formation. These materials are comparatively well known in their behavior with regard to etching.
  • etching mask according to the invention for a continuous change in the etching rate
  • Fig. 4 Surface profile measurement according to the invention, measured after the porous area has been scratched off.
  • Fig. 5 Principle of measurement of the profi le measurements.
  • FIG. 1 shows the depth of the porous strips etched according to the invention, measured with a surface profiler after removal of the porous silicon by sodium hydroxide solution (NaOH).
  • the stripe width of the structures shown here was 1000, 500 and 250 ⁇ m.
  • FIG. 2 shows the measured depth of the porous strips according to the invention after the porous layer has been removed using sodium hydroxide solution. It can be seen that in the case of a stripe width of 100 ⁇ m, the interface of a single stripe is no longer curved, but is straight. You can also see the under-etching under the mask, which was only 100 ⁇ m wide.
  • FIG. 3 shows the etching mask according to the invention for achieving a continuous change in the etching rate.
  • This mask is positioned on the surface to be etched.
  • the surface areas below the dark areas of the etching mask according to the invention are covered, the light areas of the surface are etched. In this way it is achieved that the etching rate in the strip between the two wedge structures can be continuously adjusted or changed.
  • the depth profile of porous layers according to the invention produced in this way was measured along the drawn line ABCD.
  • this surface profile measurement measured after the porous area according to the invention has been scratched off, is the result shown.
  • the interface between porous silicon and crystalline silicon can be seen.
  • the area in which the etching rate was continuously changed by means of the lateral structuring is between points B and C.
  • the exemplary embodiment shows a continuous change in the etching rate with the aid of the etching mask shown in FIG. 3.
  • the area in which this effect occurs is located between the two wedge structures and thus between points B and C. In this area, the two wedge-shaped areas that are not etched continuously change the etching rate, as can be seen from FIG. 4.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un procédé pour la production d'une couche poreuse par un processus de gravure électrochimique. On utilise à cet effet un masque de gravure correspondant à la courbe désirée de la vitesse de gravure profonde. On peut sélectionner un masque de gravure en forme de coin afin d'obtenir une courbe continue de la vitesse de gravure profonde.
EP98966576A 1997-12-23 1998-12-22 Procede de production d'une couche poreuse par un processus de gravure electrochimique Withdrawn EP1042794A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19757560 1997-12-23
DE19757560A DE19757560A1 (de) 1997-12-23 1997-12-23 Verfahren zur Herstellung einer porösen Schicht mit Hilfe eines elektrochemischen Ätzprozesses
PCT/DE1998/003775 WO1999034421A1 (fr) 1997-12-23 1998-12-22 Procede de production d'une couche poreuse par un processus de gravure electrochimique

Publications (1)

Publication Number Publication Date
EP1042794A1 true EP1042794A1 (fr) 2000-10-11

Family

ID=7853199

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98966576A Withdrawn EP1042794A1 (fr) 1997-12-23 1998-12-22 Procede de production d'une couche poreuse par un processus de gravure electrochimique

Country Status (6)

Country Link
US (1) US6398943B1 (fr)
EP (1) EP1042794A1 (fr)
JP (1) JP2002500275A (fr)
CA (1) CA2315674A1 (fr)
DE (1) DE19757560A1 (fr)
WO (1) WO1999034421A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244513B2 (en) * 2003-02-21 2007-07-17 Nano-Proprietary, Inc. Stain-etched silicon powder
US7608789B2 (en) * 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
DE102005008511B4 (de) 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005053765B4 (de) 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
DE102005053767B4 (de) * 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
KR101374932B1 (ko) * 2007-09-28 2014-03-17 재단법인서울대학교산학협력재단 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971710A (en) * 1974-11-29 1976-07-27 Ibm Anodized articles and process of preparing same
JPS6027179B2 (ja) 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
DE4310205C1 (de) * 1993-03-29 1994-06-16 Siemens Ag Verfahren zur Herstellung einer Lochstruktur in einem Substrat aus Silizium
DE4319413C2 (de) * 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel
DE19518371C1 (de) * 1995-05-22 1996-10-24 Forschungszentrum Juelich Gmbh Verfahren zur Strukturierung porösen Siliciums, sowie eine poröses Silicium enthaltende Struktur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9934421A1 *

Also Published As

Publication number Publication date
JP2002500275A (ja) 2002-01-08
WO1999034421A1 (fr) 1999-07-08
CA2315674A1 (fr) 1999-07-08
DE19757560A1 (de) 1999-07-01
US6398943B1 (en) 2002-06-04

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