EP1028526A3 - Switching device with weak-current detecting function - Google Patents

Switching device with weak-current detecting function Download PDF

Info

Publication number
EP1028526A3
EP1028526A3 EP00102236A EP00102236A EP1028526A3 EP 1028526 A3 EP1028526 A3 EP 1028526A3 EP 00102236 A EP00102236 A EP 00102236A EP 00102236 A EP00102236 A EP 00102236A EP 1028526 A3 EP1028526 A3 EP 1028526A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor element
main
semiconductor
elements
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00102236A
Other languages
German (de)
French (fr)
Other versions
EP1028526B1 (en
EP1028526A2 (en
Inventor
Shunzou Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Publication of EP1028526A2 publication Critical patent/EP1028526A2/en
Publication of EP1028526A3 publication Critical patent/EP1028526A3/en
Application granted granted Critical
Publication of EP1028526B1 publication Critical patent/EP1028526B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Electronic Switches (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

First main electrodes of second and third semiconductor elements are connected to the first main electrode of the first semiconductor element, control electrodes of the second and third semiconductor elements are connected to the control electrode of the first semiconductor element, a second main electrode of the second semiconductor element is connected to a first resistor, and a second main electrode of the third semiconductor element is connected to a second resistor. Main-electrode voltages of the first and second semiconductor elements are compared with each other by a first comparator, a control voltage is supplied a control voltage to the control electrodes of the first and second semiconductor elements according to an output of the first comparator by control means. Main-electrode voltages of the first and third semiconductor elements are compared with each other by a second comparator. The transistor widths of the second and third semiconductor elements are each smaller than the transistor width of the first semiconductor element. The first semiconductor element is connected to power supply elements in parallel with one another between a power source and a load, and a weak current is detected when the load and power supply elements are OFF. There is no shunt resistor when detecting an overcurrent or a weak current. Accordingly, a heat loss is minimized and detective sensitivity is improved.
EP00102236A 1999-02-14 2000-02-14 Switching device with weak-current detecting function Expired - Lifetime EP1028526B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7425999 1999-02-14
JP7425999 1999-02-14
JP2000032364 2000-02-09
JP2000032364A JP3628576B2 (en) 1999-02-14 2000-02-09 Micro current detector

Publications (3)

Publication Number Publication Date
EP1028526A2 EP1028526A2 (en) 2000-08-16
EP1028526A3 true EP1028526A3 (en) 2001-02-07
EP1028526B1 EP1028526B1 (en) 2004-12-08

Family

ID=26415388

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00102236A Expired - Lifetime EP1028526B1 (en) 1999-02-14 2000-02-14 Switching device with weak-current detecting function

Country Status (4)

Country Link
US (1) US6313690B1 (en)
EP (1) EP1028526B1 (en)
JP (1) JP3628576B2 (en)
DE (1) DE60016477T2 (en)

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GB9813982D0 (en) * 1998-06-30 1998-08-26 Mem Limited Residual current detection device
GB0000067D0 (en) * 2000-01-06 2000-02-23 Delta Electrical Limited Current detector and current measurement apparatus including such detector with temparature compensation
US7443229B1 (en) 2001-04-24 2008-10-28 Picor Corporation Active filtering
US6985341B2 (en) * 2001-04-24 2006-01-10 Vlt, Inc. Components having actively controlled circuit elements
CN100373737C (en) * 2001-12-10 2008-03-05 西铁城控股株式会社 charging circuit
JP4267865B2 (en) * 2002-04-19 2009-05-27 株式会社デンソー Load drive device
JP3709858B2 (en) * 2002-06-19 2005-10-26 日産自動車株式会社 Circuit for current control type semiconductor switching element
JP2004248093A (en) * 2003-02-14 2004-09-02 Auto Network Gijutsu Kenkyusho:Kk Load drive circuit
US6882212B2 (en) * 2003-05-16 2005-04-19 Power Integrations, Inc. Method and apparatus for extending the size of a transistor beyond one integrated circuit
CN100389484C (en) * 2004-12-30 2008-05-21 鸿富锦精密工业（深圳）有限公司 Parameter extraction system and method for metal oxide semiconductor field effect transistor
JP2008533734A (en) * 2005-03-15 2008-08-21 エヌエックスピー ビー ヴィ MOSFET with temperature sensing function
DE112007001293B8 (en) * 2006-06-01 2015-12-24 Autonetworks Technologies, Ltd. Power supply controller
EP2139114A1 (en) * 2008-06-23 2009-12-30 Dialog Semiconductor GmbH Ultra-low current push-buttom switch interface circuit
JP5188465B2 (en) * 2009-06-30 2013-04-24 日立オートモティブシステムズ株式会社 Current detection device and control system using the same
KR20110018110A (en) * 2009-08-17 2011-02-23 삼성전자주식회사 Constant current high voltage power supply applied to the image forming apparatus and a method for controlling the power supply of the device
WO2016168019A1 (en) * 2015-04-17 2016-10-20 Lion Semiconductor Inc. Asymmetric switching capacitor regulator
JP6544260B2 (en) * 2016-02-15 2019-07-17 株式会社デンソー Power converter
JP6837842B2 (en) * 2017-01-11 2021-03-03 矢崎総業株式会社 Semiconductor switch controller
TWI628448B (en) * 2017-03-07 2018-07-01 慧榮科技股份有限公司 Circuit test method
US11153935B2 (en) * 2017-06-15 2021-10-19 Goodrich Corporation Latching thermostats for redundant heating
CN109581112B (en) * 2018-12-10 2024-05-31 中国南方电网有限责任公司超高压输电公司柳州局 Converter valve TCU unit test platform and TCU energy supply loop fault measurement method
JP7493883B2 (en) * 2020-09-28 2024-06-03 矢崎総業株式会社 Back electromotive force suppression circuit
CN112684238B (en) * 2021-01-08 2024-05-24 四川湖山电器股份有限公司 Switch power tube load current real-time monitoring circuit and monitoring system

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EP0747713A2 (en) * 1995-06-07 1996-12-11 Siemens Aktiengesellschaft Circuit for measuring the load current of a power semiconductor device with a load on the source or drain side
US5646520A (en) * 1994-06-28 1997-07-08 National Semiconductor Corporation Methods and apparatus for sensing currents
EP0814395A2 (en) * 1996-06-21 1997-12-29 Nec Corporation Overcurrent sensing circuit for power mos field effect transistor

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DE3734886C1 (en) * 1987-10-15 1989-04-13 Draegerwerk Ag Monitoring device for temperature monitoring in a circuit arrangement
JPH01227520A (en) 1988-03-07 1989-09-11 Nippon Denso Co Ltd Power semiconductor device
JP2745663B2 (en) 1989-04-04 1998-04-28 松下電器産業株式会社 Charge control circuit
JPH03262209A (en) 1990-03-12 1991-11-21 Nec Kansai Ltd Current detection circuit
JPH04134271A (en) 1990-09-27 1992-05-08 Nec Corp Output circuit
JP2570523B2 (en) 1991-08-23 1997-01-08 日本モトローラ株式会社 Current detection circuit
US5408694A (en) * 1992-01-28 1995-04-18 National Semiconductor Corporation Receiver squelch circuit with adjustable threshold
JP2527875B2 (en) 1992-02-07 1996-08-28 富士通テン株式会社 Inductive load current detection circuit
JPH06244693A (en) 1992-03-03 1994-09-02 Nec Corp Mosfet switch circuit
JP3313773B2 (en) 1992-08-06 2002-08-12 株式会社デンソー Semiconductor device
JPH06188704A (en) 1992-12-18 1994-07-08 Fujitsu Ten Ltd Load driving device
US5424663A (en) * 1993-04-22 1995-06-13 North American Philips Corporation Integrated high voltage differential sensor using the inverse gain of high voltage transistors
JPH09145749A (en) 1995-11-29 1997-06-06 Toyota Motor Corp Current detection circuit
US5796278A (en) * 1996-04-26 1998-08-18 Delco Electronics Corporaiton Circuitry for controlling load current
JP3659741B2 (en) * 1996-06-27 2005-06-15 ローム株式会社 Output transistor protection circuit
US6091287A (en) * 1998-01-23 2000-07-18 Motorola, Inc. Voltage regulator with automatic accelerated aging circuit
JP3706515B2 (en) * 1998-12-28 2005-10-12 矢崎総業株式会社 Power supply control device and power supply control method
JP3808265B2 (en) * 1999-02-12 2006-08-09 矢崎総業株式会社 Power supply control device and power supply control method
JP2000312143A (en) * 1999-02-26 2000-11-07 Yazaki Corp Switching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646520A (en) * 1994-06-28 1997-07-08 National Semiconductor Corporation Methods and apparatus for sensing currents
EP0747713A2 (en) * 1995-06-07 1996-12-11 Siemens Aktiengesellschaft Circuit for measuring the load current of a power semiconductor device with a load on the source or drain side
EP0814395A2 (en) * 1996-06-21 1997-12-29 Nec Corporation Overcurrent sensing circuit for power mos field effect transistor

Also Published As

Publication number Publication date
DE60016477T2 (en) 2005-12-15
EP1028526B1 (en) 2004-12-08
JP2000299625A (en) 2000-10-24
JP3628576B2 (en) 2005-03-16
US6313690B1 (en) 2001-11-06
DE60016477D1 (en) 2005-01-13
EP1028526A2 (en) 2000-08-16

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