EP1024513A4 - Semiconductor photoelectric surface - Google Patents
Semiconductor photoelectric surfaceInfo
- Publication number
- EP1024513A4 EP1024513A4 EP98941849A EP98941849A EP1024513A4 EP 1024513 A4 EP1024513 A4 EP 1024513A4 EP 98941849 A EP98941849 A EP 98941849A EP 98941849 A EP98941849 A EP 98941849A EP 1024513 A4 EP1024513 A4 EP 1024513A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor photoelectric
- photoelectric surface
- semiconductor
- photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25883797A JPH1196896A (en) | 1997-09-24 | 1997-09-24 | Semiconductor photoelectric surface |
JP25883797 | 1997-09-24 | ||
PCT/JP1998/004119 WO1999016098A1 (en) | 1997-09-24 | 1998-09-11 | Semiconductor photoelectric surface |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1024513A1 EP1024513A1 (en) | 2000-08-02 |
EP1024513A4 true EP1024513A4 (en) | 2000-09-20 |
EP1024513B1 EP1024513B1 (en) | 2002-08-07 |
Family
ID=17325721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98941849A Expired - Lifetime EP1024513B1 (en) | 1997-09-24 | 1998-09-11 | Semiconductor photoelectric surface |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1024513B1 (en) |
JP (1) | JPH1196896A (en) |
AU (1) | AU9002998A (en) |
DE (1) | DE69807103T2 (en) |
WO (1) | WO1999016098A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2249877C2 (en) * | 2003-04-29 | 2005-04-10 | Бенеманская Галина Вадимовна | Device for producing photoelectronic emission into vacuum |
JP2006302843A (en) * | 2005-04-25 | 2006-11-02 | Hamamatsu Photonics Kk | Photoelectric surface and electron tube provided with it |
RU2454750C2 (en) * | 2010-08-02 | 2012-06-27 | Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН | Photocathode |
CN102087937A (en) * | 2011-01-07 | 2011-06-08 | 南京理工大学 | Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof |
US9478402B2 (en) * | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
CN105428183B (en) * | 2015-11-17 | 2017-08-04 | 南京理工大学 | A kind of reflective NEA GaN nano wires array photoelectric negative electrode and preparation method |
FI3631299T3 (en) | 2017-05-30 | 2024-06-13 | Carrier Corp | Semiconductor film and phototube light detector |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE673078A (en) * | 1964-12-02 | 1966-05-31 | ||
DE1901333A1 (en) * | 1968-01-18 | 1969-08-28 | Varian Associates | Photo emitter |
EP0066926A1 (en) * | 1981-06-03 | 1982-12-15 | Laboratoires D'electronique Et De Physique Appliquee L.E.P. | Semiconductor electron emitting device whose active layer has a doping gradient |
WO1991014283A1 (en) * | 1990-03-15 | 1991-09-19 | Varian Associates, Inc. | Improved transferred electron iii-v semiconductor photocathode |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3631303A (en) * | 1970-01-19 | 1971-12-28 | Varian Associates | Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency |
FR2217805A1 (en) * | 1973-02-13 | 1974-09-06 | Labo Electronique Physique | Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer |
US4352117A (en) * | 1980-06-02 | 1982-09-28 | International Business Machines Corporation | Electron source |
JPH0750587B2 (en) * | 1991-02-25 | 1995-05-31 | 浜松ホトニクス株式会社 | Semiconductor photoelectron emitter |
JPH06223709A (en) * | 1993-01-25 | 1994-08-12 | Katsumi Kishino | Polarized electron beam generating element |
-
1997
- 1997-09-24 JP JP25883797A patent/JPH1196896A/en active Pending
-
1998
- 1998-09-11 EP EP98941849A patent/EP1024513B1/en not_active Expired - Lifetime
- 1998-09-11 AU AU90029/98A patent/AU9002998A/en not_active Abandoned
- 1998-09-11 WO PCT/JP1998/004119 patent/WO1999016098A1/en active IP Right Grant
- 1998-09-11 DE DE69807103T patent/DE69807103T2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE673078A (en) * | 1964-12-02 | 1966-05-31 | ||
DE1901333A1 (en) * | 1968-01-18 | 1969-08-28 | Varian Associates | Photo emitter |
EP0066926A1 (en) * | 1981-06-03 | 1982-12-15 | Laboratoires D'electronique Et De Physique Appliquee L.E.P. | Semiconductor electron emitting device whose active layer has a doping gradient |
WO1991014283A1 (en) * | 1990-03-15 | 1991-09-19 | Varian Associates, Inc. | Improved transferred electron iii-v semiconductor photocathode |
Non-Patent Citations (2)
Title |
---|
H.SONNENBERG: "effect of acceptor density on photoemission from p-GaAs-Cs and -Cs2O", JOURNAL OF APPLIED PHYSICS, vol. 40, no. 8, July 1969 (1969-07-01), pages 3414 - 3416, XP002143506 * |
See also references of WO9916098A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO1999016098A1 (en) | 1999-04-01 |
JPH1196896A (en) | 1999-04-09 |
AU9002998A (en) | 1999-04-12 |
DE69807103D1 (en) | 2002-09-12 |
EP1024513B1 (en) | 2002-08-07 |
EP1024513A1 (en) | 2000-08-02 |
DE69807103T2 (en) | 2003-01-23 |
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