EP1024513A4 - Semiconductor photoelectric surface - Google Patents

Semiconductor photoelectric surface

Info

Publication number
EP1024513A4
EP1024513A4 EP98941849A EP98941849A EP1024513A4 EP 1024513 A4 EP1024513 A4 EP 1024513A4 EP 98941849 A EP98941849 A EP 98941849A EP 98941849 A EP98941849 A EP 98941849A EP 1024513 A4 EP1024513 A4 EP 1024513A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor photoelectric
photoelectric surface
semiconductor
photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98941849A
Other languages
German (de)
French (fr)
Other versions
EP1024513A1 (en
EP1024513B1 (en
Inventor
Tokuaki Nihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of EP1024513A1 publication Critical patent/EP1024513A1/en
Publication of EP1024513A4 publication Critical patent/EP1024513A4/en
Application granted granted Critical
Publication of EP1024513B1 publication Critical patent/EP1024513B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
EP98941849A 1997-09-24 1998-09-11 Semiconductor photoelectric surface Expired - Lifetime EP1024513B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25883797A JPH1196896A (en) 1997-09-24 1997-09-24 Semiconductor photoelectric surface
JP25883797 1997-09-24
PCT/JP1998/004119 WO1999016098A1 (en) 1997-09-24 1998-09-11 Semiconductor photoelectric surface

Publications (3)

Publication Number Publication Date
EP1024513A1 EP1024513A1 (en) 2000-08-02
EP1024513A4 true EP1024513A4 (en) 2000-09-20
EP1024513B1 EP1024513B1 (en) 2002-08-07

Family

ID=17325721

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98941849A Expired - Lifetime EP1024513B1 (en) 1997-09-24 1998-09-11 Semiconductor photoelectric surface

Country Status (5)

Country Link
EP (1) EP1024513B1 (en)
JP (1) JPH1196896A (en)
AU (1) AU9002998A (en)
DE (1) DE69807103T2 (en)
WO (1) WO1999016098A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2249877C2 (en) * 2003-04-29 2005-04-10 Бенеманская Галина Вадимовна Device for producing photoelectronic emission into vacuum
JP2006302843A (en) * 2005-04-25 2006-11-02 Hamamatsu Photonics Kk Photoelectric surface and electron tube provided with it
RU2454750C2 (en) * 2010-08-02 2012-06-27 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН Photocathode
CN102087937A (en) * 2011-01-07 2011-06-08 南京理工大学 Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof
US9478402B2 (en) * 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
CN105428183B (en) * 2015-11-17 2017-08-04 南京理工大学 A kind of reflective NEA GaN nano wires array photoelectric negative electrode and preparation method
EP4368886A2 (en) 2017-05-30 2024-05-15 Carrier Corporation Semiconductor film and phototube light detector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE673078A (en) * 1964-12-02 1966-05-31
DE1901333A1 (en) * 1968-01-18 1969-08-28 Varian Associates Photo emitter
EP0066926A1 (en) * 1981-06-03 1982-12-15 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Semiconductor electron emitting device whose active layer has a doping gradient
WO1991014283A1 (en) * 1990-03-15 1991-09-19 Varian Associates, Inc. Improved transferred electron iii-v semiconductor photocathode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
FR2217805A1 (en) * 1973-02-13 1974-09-06 Labo Electronique Physique Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
JPH0750587B2 (en) * 1991-02-25 1995-05-31 浜松ホトニクス株式会社 Semiconductor photoelectron emitter
JPH06223709A (en) * 1993-01-25 1994-08-12 Katsumi Kishino Polarized electron beam generating element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE673078A (en) * 1964-12-02 1966-05-31
DE1901333A1 (en) * 1968-01-18 1969-08-28 Varian Associates Photo emitter
EP0066926A1 (en) * 1981-06-03 1982-12-15 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Semiconductor electron emitting device whose active layer has a doping gradient
WO1991014283A1 (en) * 1990-03-15 1991-09-19 Varian Associates, Inc. Improved transferred electron iii-v semiconductor photocathode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H.SONNENBERG: "effect of acceptor density on photoemission from p-GaAs-Cs and -Cs2O", JOURNAL OF APPLIED PHYSICS, vol. 40, no. 8, July 1969 (1969-07-01), pages 3414 - 3416, XP002143506 *
See also references of WO9916098A1 *

Also Published As

Publication number Publication date
JPH1196896A (en) 1999-04-09
DE69807103T2 (en) 2003-01-23
DE69807103D1 (en) 2002-09-12
WO1999016098A1 (en) 1999-04-01
EP1024513A1 (en) 2000-08-02
EP1024513B1 (en) 2002-08-07
AU9002998A (en) 1999-04-12

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