EP0996968A1 - Procede et dispositif pour le traitement de substrats plans, en particulier de pastilles de silicium (tranches) pour la fabrication de composants microelectroniques - Google Patents

Procede et dispositif pour le traitement de substrats plans, en particulier de pastilles de silicium (tranches) pour la fabrication de composants microelectroniques

Info

Publication number
EP0996968A1
EP0996968A1 EP98939590A EP98939590A EP0996968A1 EP 0996968 A1 EP0996968 A1 EP 0996968A1 EP 98939590 A EP98939590 A EP 98939590A EP 98939590 A EP98939590 A EP 98939590A EP 0996968 A1 EP0996968 A1 EP 0996968A1
Authority
EP
European Patent Office
Prior art keywords
station
treatment
disks
substrate
silicon wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98939590A
Other languages
German (de)
English (en)
Inventor
Horst Kunze-Concewitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1997130582 external-priority patent/DE19730582A1/de
Priority claimed from DE1997130581 external-priority patent/DE19730581A1/de
Application filed by Individual filed Critical Individual
Publication of EP0996968A1 publication Critical patent/EP0996968A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor

Definitions

  • the invention relates to a method and a device for treating or processing flat substrates, in particular silicon wafers for producing microelectronic components.
  • Substrates for components in microelectronics require extremely clean surfaces, which necessitate repeated cleaning processes (treatments) during the production of a chip.
  • the requirements for the cleaning process make it necessary to clean the substrates on both sides and at all points on the surface.
  • individual substrate cleaning is predominantly carried out using the wet process, for example by brushing, ultrasound, megasound, high pressure, etc.
  • the substrate must be transported to the individual cleaning stations predominantly in the wet state.
  • the photosensitive lacquer layer (photoresis) is spun onto the substrate in a horizontal position, with the subsequent processes such as drying the lacquer layer, exposing, developing, etching, etc., applying adhesion promoters before applying the lacquer layer, likewise exclusively in a horizontal substrate position.
  • the handling between the individual processing steps is carried out by complex cleanroom-compatible handling robots.
  • drying options such as blowing nitrogen onto the center of the substrate, also create turbulence with the same effects.
  • the drying process can be supported by additional heating of the surface (infrared, laser).
  • evaporation processes occur, which have the result that residues in the rinsing water leave drying spots on the substrate surface.
  • Drying spots are also particles and are therefore undesirable in chip manufacture.
  • the invention has for its object to provide a method and / or a device with which such substrates can be treated and processed better and, above all, cheaper.
  • This object is achieved according to the invention by a method of the type mentioned in the introduction, in which the flat substrates, in particular the silicon wafers, are aligned in such a way that the wafer plane runs essentially vertically and that the wafers pass through at least one treatment station in this (vertical) alignment. They therefore run into the treatment station in a vertical orientation, are treated there in a vertical orientation and leave it again in a vertical orientation. There is a possibility that they are moved transversely in a vertical orientation, but they retain their vertical orientation.
  • the silicon wafers can be transported using handling robots.
  • the discs are gripped at their edges, for which purpose e.g. conical recesses on the robots can serve.
  • Treatment station which are arranged inclined, pass through gravity, in particular roll through. There is therefore no need for separate transport devices (handling robots), which makes the system relatively inexpensive.
  • the disks pass through several treatment stations which are arranged one behind the other.
  • the substrate transport by means of guide or transport rollers or transport elements which are arranged on a transport belt.
  • the distance between the transport rollers or elements and the number and size of the same can be adapted to the dimensions of the substrates to be processed or the silicon wafers in such a way that one is as possible minimal contact area is achieved in the edge region of the substrate on the transport rollers or elements.
  • the lateral guidance and thus stabilization of the vertical alignment of the silicon wafers can take place without contact or in contact with the substrate surface, depending on the requirements and the machining process.
  • contactless guidance in wet processes is possible by spray nozzles arranged on both sides of the substrate or by guide rollers or strips wetted with water or another liquid, so that the substrate has only surface contact with the liquid film or the liquid jet.
  • guidance by air or N 2 spraying can be considered. It is also possible to guide the substrates over air cushions that are generated between the substrate and guide rollers or strips.
  • Contact-based guidance can take place by means of rollers or guide strips which guide the substrate in the edge region or laterally.
  • the mostly necessary rotation of the substrates for treatment or processing can take place by lifting the substrates off the conveyor belt, the substrate being pressed against drive rollers designed as rotary drive elements, which act on one side or on two opposite sides of the silicon wafer and between them or between them yourself and the transport rollers or the rollers of the lifting mechanism.
  • the clamping pressure can be regulated by means of spring elements, pressure transducers or also electronically controlled, with which the drive roller and / or the lifting mechanism is coupled.
  • the transport rollers themselves are designed as drive rollers.
  • the substrates rest on the rotary drives only by their weight and can be held in the vertical orientation by means of holding devices, for example.
  • the discs are stopped and / or rotated during the treatment. They remain in the individual treatment stations until the desired work result is achieved.
  • the method can e.g. a cleaning or drying process, but also a photolithographic treatment process, wherein, when cleaning the silicon wafers, fluid media are directed onto at least one, in particular both surfaces of the silicon wafers.
  • the process can also be a spin drying process, in which, in addition to the reduced centrifugal force in the center of the disc, gravity acts on the water drops located in the center of the substrate.
  • a gas-alcohol mixture for example nitrogen with isopropanol, is introduced into the treatment station in order to further reduce the surface tension of the water. This can the centrifugal forces required to spin off the water and thus the speed are further reduced.
  • the treatment station has a vertical inlet for the vertically aligned disks, a transport path for the disks in a vertical orientation and a vertical outlet.
  • the transport route can be equipped with guide elements for guiding the disks in a vertical orientation.
  • an inclined plane can serve as a transport route (guideway), for example.
  • the disks pass through the individual treatment stations in a vertical orientation, so that the disks can be processed on both sides.
  • vapor phases or wet processes are used, e.g. when cleaning, applying an adhesion promoter, developing, etching, rinsing, etc.
  • the individual stations can be arranged in such a way that the fluids are used in a cascade manner, i.e. the fluid of a subsequent station is then in a preceding station, in which e.g. a pretreatment or other side of the substrate is used. This has the advantage that only a fraction of the fluids are required.
  • the fluids can then drain off easily and take the dirt particles with them and transport them away.
  • Special turning devices for the panes are not required within the treatment stations, since the panes enter the treatment stations vertically (for example cleaning stations) and leave them vertically again.
  • the disks can be removed or discharged from the guideway and fed to a separate processing zone. In this zone, further processing or treatment steps can be carried out which, for example, cannot be carried out in successive stations; for example the spin drying process or the processes listed below. However, the disc is still in a vertical position.
  • Stations for applying an adhesion promoter for treating with photoresists, protective lacquers, compensating lacquer layers, for drying, for development, for rinsing, for wet processes such as etching etc., for exposure etc. are advantageously provided.
  • the substrates can be treated in a vertical orientation.
  • a station for brush cleaning can be provided, in which the silicon wafer is set in rotation and this rotation is supported by driven (rotating) brushes pressing on both sides of the surface, whereby one of the brushes (e.g. nylon brushes, sponge brushes) overlaps the entire substrate diameter and the other brush extends only over part of the substrate diameter or rotates only over part of the substrate diameter, or both brushes extend over only part of the substrate diameter or only over part of the brushes.
  • the brushes e.g. nylon brushes, sponge brushes
  • the direction of rotation of the brushes is expediently chosen so that the rotation of the disc is supported.
  • the problem with brush cleaning is that the brushes have to be pressed more or less strongly against the substrate surface in order to achieve a cleaning effect. This pressure, however, slows down the rotation of the silicon wafer. To counteract this, the clamping force by means of which the substrate is held during the treatment would have to be increased considerably, but this can lead to damage to the crystal structures. This can be counteracted by one of the brushes rotating only over a partial diameter of the silicon wafer. This supports the rotational movement of the substrate.
  • the cleaning performance can be varied by selecting the contact pressure of the brushes and their speed.
  • the surface of the substrate can be sprayed with water to give the brushes the moisture necessary for cleaning.
  • the brushes act beyond the center of the substrate in order to also clean the substrate center. That is, both brushes extend across the substrate center.
  • the chamber can consist, for example, of two halves which can be moved relative to one another.
  • the substrate is held in the chamber by means of a gripper (substrate holder) which engages on the edges of the substrate.
  • the centrifuged water is removed from the centrifugal chamber by means of a suction device.
  • the station can be equipped with feeders for dry and / or preheated gas (eg nitrogen) can be provided, which can improve the drying, since this can reduce the moisture in the centrifugal chamber after the rotation has ended.
  • the treatment station is provided with inclined raceways for the disks, so that the disks can roll through the treatment station under gravity. Drives for this are not required.
  • the treatment station is advantageously provided with at least one stop for the disks, so that the disks (substrates) can remain in the station for the required or a predetermined treatment time. They can then be released for further transport.
  • Rotary drive elements are advantageously provided within the treatment station, by means of which the disks are set in a rotational movement without being transported, i.e. they can be rotated about their central axis during their stay in the station.
  • a feed station and / or a collecting station which can contain a magazine or is designed as such, is advantageously provided.
  • a large number of slices are kept ready next to one another and individually over Apertures fed to the treatment stations.
  • the discs can be stored in the magazines in a vertical orientation. Only a single slice can be fed to the feed station or reach the collecting station through the diaphragm, the other slices located in the feed station or collecting station being retained via the diaphragm.
  • the feed station and / or the collecting station can be tilted so that the disks exit under gravity or can enter the station, i.e. the desired pane falls over the inlet into the station.
  • Another possibility of transporting the disks from the feed station or the collecting station is that the feeding station or the collecting station has a stamp which transfers the disks into or out of the treatment station.
  • the guide elements can be designed so that they can be moved out of the pane area. This enables lateral loading and unloading of the conveyor belt or the treadmill.
  • the drying can be arranged as a further station downstream of the rinsing station or as a separate station in which alcohol-steam drying or marangoni drying takes place.
  • FIG. 1 shows a section of a processing device with vertically arranged silicon wafers
  • Figure 2 shows a station in which the substrate undergoes a processing process
  • Figure 3 shows a variant of the device with feed station and collecting station
  • Figure 4 shows a further variant with a feed station which has a stamp
  • Figure 5 shows a variant of the device with a tiltable feed station
  • FIG. 6 shows a variant of the collecting station, which is designed to be tiltable
  • FIG. 7 shows a further variant of the collecting station in which the disks are inserted by means of a transport element
  • FIG. 8 shows an embodiment of the substrate transport with a rotary drive device
  • Figure 9 shows an embodiment of the
  • Substrate transport device with alternative rotary drive device Substrate transport device with alternative rotary drive device
  • FIG. 10 shows an embodiment of the
  • Substrate transport device in which the transport rollers are designed as rotary drive elements
  • FIG. 11 shows a contactless guide device for the silicon wafers
  • FIG. 12 a cleaning station equipped with brushes
  • Figure 13 shows a drying device with a centrifugal chamber.
  • FIG. 1 shows two stations 1 and 2 of a processing device 3 and a magazine 4 in which silicon wafers are stored.
  • the silicon wafers 5 are introduced from this magazine 4, for example by tilting the magazine 4 in the direction of the arrow 6 or by a handling system, into the first station 1 in a vertical orientation.
  • the substrates hereinafter referred to as silicon wafers 5
  • the substrates are held at their edges against tipping over by guide elements 7 and 8. Since the guide elements 7 and 8 are arranged inclined and the guide element 8 forms a raceway 9, the silicon wafer 5 rolls by gravity in the transport direction, ie in the direction of the arrow 10.
  • the silicon wafer 5 is stopped by a stop 11 held so that it is held in this position and can be edited.
  • Silicon wafer 5 can be set in rotation, for example by means of a rotary drive element 14, so that it is machined uniformly. After processing, the station 1 is returned to the starting position and the stopper 11 releases the silicon wafer 5, so that it can roll into the next station 2 via an intermediate element 15.
  • Figure 2 shows an embodiment of a station, e.g. the station 2, via which the disk 5 is released after the guide elements 7 and 8 have moved apart in the direction of the arrows 12 and 13 and is transported by transport in the direction of the arrow 16 into a separate treatment zone 17.
  • a separate treatment zone 17 e.g. Fluids applied to the surface 18 of the substrate.
  • the substrate is e.g. held with a substrate holder 19 and rotated. Excess fluids are thrown off the surface 18. In thermal processes, the substrate holder 19 can also be heated.
  • the disk 5 is returned to the guide elements 7, 8 by moving the substrate holder 19, so that the disk 5 can be fed to the next station over the track.
  • FIG. 3 shows two cleaning stations 20 and 21 arranged one behind the other, which are followed by a rinsing station 22.
  • the cleaning stations are two cleaning stations 20 and 21 arranged one behind the other, which are followed by a rinsing station 22.
  • each cleaning station 20 or 21 and the rinsing station 22 are inclined and have an inclined plane on which silicon wafers 5 can roll due to gravity.
  • the silicon wafers 5 pass through the individual cleaning stations 20 and 21 and the rinsing station 22 without additional drive means.
  • the cleaning station 21 is provided with a drain 23 or 24, via which the cleaning fluid, which, for example, deionized water with or without chemical additives, o. the like is, can expire.
  • the cleaning stations 20 and 21 are arranged one behind the other, so that the cleaning fluid flowing out via the outlet 24 can be reused in the cleaning station 20, ie in the upstream cleaning station. In this way, cleaning fluid is saved.
  • a magazine 4 in front of the cleaning station 20 with a feed station 26, via which the silicon wafers 5 are fed in the direction of the arrow 6 to the cleaning station 20.
  • the rinsing station 22 is followed by a further magazine 27 which has a collecting station 28.
  • the collecting station 28 can also be designed as a drying station.
  • FIG. 4 shows a variant in which the silicon wafer 5 is transported from the magazine 4, in particular from the feed station 26, into the cleaning station 20.
  • the feed station 26 is provided with a transport stamp 29 which can be moved vertically.
  • This transport stamp 29 has a suitable holder or holding device for the silicon wafer 5 at its upper end 30.
  • a silicon wafer is removed from the magazine 4 and moved vertically upwards.
  • the upper edge of the silicon wafer 5 abuts an inclined surface 31 and is pushed away from the latter by a further upward movement of the transport stamp 29 in the direction of the arrow 32.
  • the silicon wafer 5 enters the cleaning station 20 and rolls on the inclined track 9 until it is stopped by stoppers 11. In this position, the silicon wafer 5 is on both sides cleaned.
  • rotary drive elements 14 are also shown, which set the silicon wafer 5 in a rotational movement in the direction of the arrow 33, which is also possible in the station 20.
  • FIG. 1 Another variant for loading the cleaning station 20 is shown in FIG.
  • the magazine 4 is pivoted there in such a way that the silicon wafer 5 can enter the cleaning station 20 by gravity from the magazine 4 and the feed station 26.
  • An aperture 34 ensures that only the desired silicon wafer 5 leaves the feed station 26, which only allows the desired silicon wafer 5 to pass through and retains the remaining wafers in the feed station 26.
  • a pivotable magazine 27 with a collecting station 28 is provided, into which the silicon wafer 5 enters through an aperture 35 (FIG. 6).
  • the disk 5 emerging from the rinsing station 22 can also be gripped by a gripper 36 and clipped into the collecting station 28 of the magazine 27.
  • arrows 37 can be seen in the rinsing station, with which the direction of flow of rinsing liquid onto the disk 5 is indicated. In this way, the disc 5 can also be rotated so that it rotates in the direction of arrow 33.
  • Figure 8 shows a transport device for the substrate transport, the silicon wafer 5 by means of transport rollers 40, the "spaced" on a Conveyor belt 41 are attached, is moved.
  • the transport rollers 40 are arranged such that a silicon wafer 5 always comes to rest between two transport rollers 40 and the distance to the next pair of transport rollers 40 remains unoccupied. In this way, a minimal contact surface of the substrates 5 is achieved.
  • the lateral guidance of the disks 5 takes place by means of guide elements 7, which are designed here as guide strips.
  • the substrate 5 is lifted from below from the conveyor belt 41 by rollers 42, which are resiliently mounted and serve as a lifting mechanism, so that the silicon wafer 5 is located outside the contact area with the transport rollers 40.
  • Drive rollers 14, which set the silicon wafers 5 in rotation, are provided opposite the rollers 42 as rotary drive elements 14. These drive rollers 14 are pressed against the silicon wafer 5, the pressing force being regulated by the spring force which counteracts it.
  • the guide bar can be moved upwards, so that the silicon wafers can be removed from the conveyor belt 41 from the side.
  • FIG. 9 shows an alternative embodiment, the silicon wafers 5 being driven by drive rollers 14 serving as rotary drive elements, which can be moved in the direction of one another until they clamp the substrate 5 between them and lift them out of the conveyor belt 41 and the engagement of the transport rollers 40 Rotation.
  • the drive rollers 14 there is a further guide roller 43 which can be moved in the direction of the substrate 5 and which is spring-mounted. With this three-point bearing, the silicon wafer is held during the treatment.
  • FIG. 10 shows a further embodiment of the invention, the transport rollers 40 being designed as rotary drive elements 14. The disk 5 is held and its rotary drive is carried out by means of the third roller 43, which can be moved in the direction of the disk 5 and clamps the silicon wafer 5 in a resilient manner.
  • FIG. 11 shows the contactless guidance of the silicon wafers 5 by means of spray nozzles 44.
  • brushes 50, 51 are used which act on the rotating silicon wafer 5 (FIG. 12).
  • the brushes 50, 51 are nylon or sponge brushes (sponge brush roller).
  • the brushes 50, 51 are pressed for cleaning in a rotating manner and with a certain contact pressure against the silicon wafer 5, as a result of which the rotation of the wafer 5 is braked.
  • only one of the brushes 50 extends or rotates over the entire substrate diameter.
  • the other brush 51 extends or rotates only over part of the substrate diameter, but in order to ensure cleaning of the substrate center, this brush 51 also extends beyond the center of the substrate.
  • FIG. 13 shows a drying station for spin drying, in which the substrate 5 is held at its edge area within the closed centrifugal chamber 53 by means of a gripper 19, the gripper 19 being drivable via a shaft 54.
  • the centrifugal chamber 53 consists of two halves 55 and 56 which are moved apart for loading and unloading.
  • the substrate 5 is rotated for drying.
  • the centrifugal forces that act on the center of the substrate are supported by gravity, which also acts on the water drops that are on the substrate 5.
  • an alcohol-gas mixture has been introduced into the centrifugal chamber 53, so that there is an alcohol atmosphere therein.
  • the centrifugal chamber 53 is opened so that the moisture in the centrifugal chamber 53 is reduced and the substrate 5 dries completely.
  • dry gas which has been preheated and which is used to absorb the residual moisture can also be introduced through the inlets 58.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un procédé et un dispositif pour le traitement ou le travail de substrats plans, tels que des pastilles de silicium (tranches) pour la fabrication de composants électroniques, lesdites pastilles de silicum étant orientées verticalement.
EP98939590A 1997-07-17 1998-07-01 Procede et dispositif pour le traitement de substrats plans, en particulier de pastilles de silicium (tranches) pour la fabrication de composants microelectroniques Withdrawn EP0996968A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19730581 1997-07-17
DE1997130582 DE19730582A1 (de) 1997-07-17 1997-07-17 Verfahren und Vorrichtung zur Bearbeitung von Wafer zum Herstellen mikroelektronischer Bauelemente
DE1997130581 DE19730581A1 (de) 1997-07-17 1997-07-17 Verfahren und Vorrichtung zum Reinigen von Wafer z. B. von Silizium-Scheiben
DE19730582 1997-07-17
PCT/EP1998/004049 WO1999004416A1 (fr) 1997-07-17 1998-07-01 Procede et dispositif pour le traitement de substrats plans, en particulier de pastilles de silicium (tranches) pour la fabrication de composants microelectroniques

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US (1) US6251551B1 (fr)
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WO1999004416A1 (fr) 1999-01-28
US6251551B1 (en) 2001-06-26

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