EP0996968A1 - Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components - Google Patents

Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components

Info

Publication number
EP0996968A1
EP0996968A1 EP98939590A EP98939590A EP0996968A1 EP 0996968 A1 EP0996968 A1 EP 0996968A1 EP 98939590 A EP98939590 A EP 98939590A EP 98939590 A EP98939590 A EP 98939590A EP 0996968 A1 EP0996968 A1 EP 0996968A1
Authority
EP
European Patent Office
Prior art keywords
station
treatment
disks
substrate
silicon wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98939590A
Other languages
German (de)
French (fr)
Inventor
Horst Kunze-Concewitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1997130581 external-priority patent/DE19730581A1/en
Priority claimed from DE1997130582 external-priority patent/DE19730582A1/en
Application filed by Individual filed Critical Individual
Publication of EP0996968A1 publication Critical patent/EP0996968A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor

Definitions

  • the invention relates to a method and a device for treating or processing flat substrates, in particular silicon wafers for producing microelectronic components.
  • Substrates for components in microelectronics require extremely clean surfaces, which necessitate repeated cleaning processes (treatments) during the production of a chip.
  • the requirements for the cleaning process make it necessary to clean the substrates on both sides and at all points on the surface.
  • individual substrate cleaning is predominantly carried out using the wet process, for example by brushing, ultrasound, megasound, high pressure, etc.
  • the substrate must be transported to the individual cleaning stations predominantly in the wet state.
  • the photosensitive lacquer layer (photoresis) is spun onto the substrate in a horizontal position, with the subsequent processes such as drying the lacquer layer, exposing, developing, etching, etc., applying adhesion promoters before applying the lacquer layer, likewise exclusively in a horizontal substrate position.
  • the handling between the individual processing steps is carried out by complex cleanroom-compatible handling robots.
  • drying options such as blowing nitrogen onto the center of the substrate, also create turbulence with the same effects.
  • the drying process can be supported by additional heating of the surface (infrared, laser).
  • evaporation processes occur, which have the result that residues in the rinsing water leave drying spots on the substrate surface.
  • Drying spots are also particles and are therefore undesirable in chip manufacture.
  • the invention has for its object to provide a method and / or a device with which such substrates can be treated and processed better and, above all, cheaper.
  • This object is achieved according to the invention by a method of the type mentioned in the introduction, in which the flat substrates, in particular the silicon wafers, are aligned in such a way that the wafer plane runs essentially vertically and that the wafers pass through at least one treatment station in this (vertical) alignment. They therefore run into the treatment station in a vertical orientation, are treated there in a vertical orientation and leave it again in a vertical orientation. There is a possibility that they are moved transversely in a vertical orientation, but they retain their vertical orientation.
  • the silicon wafers can be transported using handling robots.
  • the discs are gripped at their edges, for which purpose e.g. conical recesses on the robots can serve.
  • Treatment station which are arranged inclined, pass through gravity, in particular roll through. There is therefore no need for separate transport devices (handling robots), which makes the system relatively inexpensive.
  • the disks pass through several treatment stations which are arranged one behind the other.
  • the substrate transport by means of guide or transport rollers or transport elements which are arranged on a transport belt.
  • the distance between the transport rollers or elements and the number and size of the same can be adapted to the dimensions of the substrates to be processed or the silicon wafers in such a way that one is as possible minimal contact area is achieved in the edge region of the substrate on the transport rollers or elements.
  • the lateral guidance and thus stabilization of the vertical alignment of the silicon wafers can take place without contact or in contact with the substrate surface, depending on the requirements and the machining process.
  • contactless guidance in wet processes is possible by spray nozzles arranged on both sides of the substrate or by guide rollers or strips wetted with water or another liquid, so that the substrate has only surface contact with the liquid film or the liquid jet.
  • guidance by air or N 2 spraying can be considered. It is also possible to guide the substrates over air cushions that are generated between the substrate and guide rollers or strips.
  • Contact-based guidance can take place by means of rollers or guide strips which guide the substrate in the edge region or laterally.
  • the mostly necessary rotation of the substrates for treatment or processing can take place by lifting the substrates off the conveyor belt, the substrate being pressed against drive rollers designed as rotary drive elements, which act on one side or on two opposite sides of the silicon wafer and between them or between them yourself and the transport rollers or the rollers of the lifting mechanism.
  • the clamping pressure can be regulated by means of spring elements, pressure transducers or also electronically controlled, with which the drive roller and / or the lifting mechanism is coupled.
  • the transport rollers themselves are designed as drive rollers.
  • the substrates rest on the rotary drives only by their weight and can be held in the vertical orientation by means of holding devices, for example.
  • the discs are stopped and / or rotated during the treatment. They remain in the individual treatment stations until the desired work result is achieved.
  • the method can e.g. a cleaning or drying process, but also a photolithographic treatment process, wherein, when cleaning the silicon wafers, fluid media are directed onto at least one, in particular both surfaces of the silicon wafers.
  • the process can also be a spin drying process, in which, in addition to the reduced centrifugal force in the center of the disc, gravity acts on the water drops located in the center of the substrate.
  • a gas-alcohol mixture for example nitrogen with isopropanol, is introduced into the treatment station in order to further reduce the surface tension of the water. This can the centrifugal forces required to spin off the water and thus the speed are further reduced.
  • the treatment station has a vertical inlet for the vertically aligned disks, a transport path for the disks in a vertical orientation and a vertical outlet.
  • the transport route can be equipped with guide elements for guiding the disks in a vertical orientation.
  • an inclined plane can serve as a transport route (guideway), for example.
  • the disks pass through the individual treatment stations in a vertical orientation, so that the disks can be processed on both sides.
  • vapor phases or wet processes are used, e.g. when cleaning, applying an adhesion promoter, developing, etching, rinsing, etc.
  • the individual stations can be arranged in such a way that the fluids are used in a cascade manner, i.e. the fluid of a subsequent station is then in a preceding station, in which e.g. a pretreatment or other side of the substrate is used. This has the advantage that only a fraction of the fluids are required.
  • the fluids can then drain off easily and take the dirt particles with them and transport them away.
  • Special turning devices for the panes are not required within the treatment stations, since the panes enter the treatment stations vertically (for example cleaning stations) and leave them vertically again.
  • the disks can be removed or discharged from the guideway and fed to a separate processing zone. In this zone, further processing or treatment steps can be carried out which, for example, cannot be carried out in successive stations; for example the spin drying process or the processes listed below. However, the disc is still in a vertical position.
  • Stations for applying an adhesion promoter for treating with photoresists, protective lacquers, compensating lacquer layers, for drying, for development, for rinsing, for wet processes such as etching etc., for exposure etc. are advantageously provided.
  • the substrates can be treated in a vertical orientation.
  • a station for brush cleaning can be provided, in which the silicon wafer is set in rotation and this rotation is supported by driven (rotating) brushes pressing on both sides of the surface, whereby one of the brushes (e.g. nylon brushes, sponge brushes) overlaps the entire substrate diameter and the other brush extends only over part of the substrate diameter or rotates only over part of the substrate diameter, or both brushes extend over only part of the substrate diameter or only over part of the brushes.
  • the brushes e.g. nylon brushes, sponge brushes
  • the direction of rotation of the brushes is expediently chosen so that the rotation of the disc is supported.
  • the problem with brush cleaning is that the brushes have to be pressed more or less strongly against the substrate surface in order to achieve a cleaning effect. This pressure, however, slows down the rotation of the silicon wafer. To counteract this, the clamping force by means of which the substrate is held during the treatment would have to be increased considerably, but this can lead to damage to the crystal structures. This can be counteracted by one of the brushes rotating only over a partial diameter of the silicon wafer. This supports the rotational movement of the substrate.
  • the cleaning performance can be varied by selecting the contact pressure of the brushes and their speed.
  • the surface of the substrate can be sprayed with water to give the brushes the moisture necessary for cleaning.
  • the brushes act beyond the center of the substrate in order to also clean the substrate center. That is, both brushes extend across the substrate center.
  • the chamber can consist, for example, of two halves which can be moved relative to one another.
  • the substrate is held in the chamber by means of a gripper (substrate holder) which engages on the edges of the substrate.
  • the centrifuged water is removed from the centrifugal chamber by means of a suction device.
  • the station can be equipped with feeders for dry and / or preheated gas (eg nitrogen) can be provided, which can improve the drying, since this can reduce the moisture in the centrifugal chamber after the rotation has ended.
  • the treatment station is provided with inclined raceways for the disks, so that the disks can roll through the treatment station under gravity. Drives for this are not required.
  • the treatment station is advantageously provided with at least one stop for the disks, so that the disks (substrates) can remain in the station for the required or a predetermined treatment time. They can then be released for further transport.
  • Rotary drive elements are advantageously provided within the treatment station, by means of which the disks are set in a rotational movement without being transported, i.e. they can be rotated about their central axis during their stay in the station.
  • a feed station and / or a collecting station which can contain a magazine or is designed as such, is advantageously provided.
  • a large number of slices are kept ready next to one another and individually over Apertures fed to the treatment stations.
  • the discs can be stored in the magazines in a vertical orientation. Only a single slice can be fed to the feed station or reach the collecting station through the diaphragm, the other slices located in the feed station or collecting station being retained via the diaphragm.
  • the feed station and / or the collecting station can be tilted so that the disks exit under gravity or can enter the station, i.e. the desired pane falls over the inlet into the station.
  • Another possibility of transporting the disks from the feed station or the collecting station is that the feeding station or the collecting station has a stamp which transfers the disks into or out of the treatment station.
  • the guide elements can be designed so that they can be moved out of the pane area. This enables lateral loading and unloading of the conveyor belt or the treadmill.
  • the drying can be arranged as a further station downstream of the rinsing station or as a separate station in which alcohol-steam drying or marangoni drying takes place.
  • FIG. 1 shows a section of a processing device with vertically arranged silicon wafers
  • Figure 2 shows a station in which the substrate undergoes a processing process
  • Figure 3 shows a variant of the device with feed station and collecting station
  • Figure 4 shows a further variant with a feed station which has a stamp
  • Figure 5 shows a variant of the device with a tiltable feed station
  • FIG. 6 shows a variant of the collecting station, which is designed to be tiltable
  • FIG. 7 shows a further variant of the collecting station in which the disks are inserted by means of a transport element
  • FIG. 8 shows an embodiment of the substrate transport with a rotary drive device
  • Figure 9 shows an embodiment of the
  • Substrate transport device with alternative rotary drive device Substrate transport device with alternative rotary drive device
  • FIG. 10 shows an embodiment of the
  • Substrate transport device in which the transport rollers are designed as rotary drive elements
  • FIG. 11 shows a contactless guide device for the silicon wafers
  • FIG. 12 a cleaning station equipped with brushes
  • Figure 13 shows a drying device with a centrifugal chamber.
  • FIG. 1 shows two stations 1 and 2 of a processing device 3 and a magazine 4 in which silicon wafers are stored.
  • the silicon wafers 5 are introduced from this magazine 4, for example by tilting the magazine 4 in the direction of the arrow 6 or by a handling system, into the first station 1 in a vertical orientation.
  • the substrates hereinafter referred to as silicon wafers 5
  • the substrates are held at their edges against tipping over by guide elements 7 and 8. Since the guide elements 7 and 8 are arranged inclined and the guide element 8 forms a raceway 9, the silicon wafer 5 rolls by gravity in the transport direction, ie in the direction of the arrow 10.
  • the silicon wafer 5 is stopped by a stop 11 held so that it is held in this position and can be edited.
  • Silicon wafer 5 can be set in rotation, for example by means of a rotary drive element 14, so that it is machined uniformly. After processing, the station 1 is returned to the starting position and the stopper 11 releases the silicon wafer 5, so that it can roll into the next station 2 via an intermediate element 15.
  • Figure 2 shows an embodiment of a station, e.g. the station 2, via which the disk 5 is released after the guide elements 7 and 8 have moved apart in the direction of the arrows 12 and 13 and is transported by transport in the direction of the arrow 16 into a separate treatment zone 17.
  • a separate treatment zone 17 e.g. Fluids applied to the surface 18 of the substrate.
  • the substrate is e.g. held with a substrate holder 19 and rotated. Excess fluids are thrown off the surface 18. In thermal processes, the substrate holder 19 can also be heated.
  • the disk 5 is returned to the guide elements 7, 8 by moving the substrate holder 19, so that the disk 5 can be fed to the next station over the track.
  • FIG. 3 shows two cleaning stations 20 and 21 arranged one behind the other, which are followed by a rinsing station 22.
  • the cleaning stations are two cleaning stations 20 and 21 arranged one behind the other, which are followed by a rinsing station 22.
  • each cleaning station 20 or 21 and the rinsing station 22 are inclined and have an inclined plane on which silicon wafers 5 can roll due to gravity.
  • the silicon wafers 5 pass through the individual cleaning stations 20 and 21 and the rinsing station 22 without additional drive means.
  • the cleaning station 21 is provided with a drain 23 or 24, via which the cleaning fluid, which, for example, deionized water with or without chemical additives, o. the like is, can expire.
  • the cleaning stations 20 and 21 are arranged one behind the other, so that the cleaning fluid flowing out via the outlet 24 can be reused in the cleaning station 20, ie in the upstream cleaning station. In this way, cleaning fluid is saved.
  • a magazine 4 in front of the cleaning station 20 with a feed station 26, via which the silicon wafers 5 are fed in the direction of the arrow 6 to the cleaning station 20.
  • the rinsing station 22 is followed by a further magazine 27 which has a collecting station 28.
  • the collecting station 28 can also be designed as a drying station.
  • FIG. 4 shows a variant in which the silicon wafer 5 is transported from the magazine 4, in particular from the feed station 26, into the cleaning station 20.
  • the feed station 26 is provided with a transport stamp 29 which can be moved vertically.
  • This transport stamp 29 has a suitable holder or holding device for the silicon wafer 5 at its upper end 30.
  • a silicon wafer is removed from the magazine 4 and moved vertically upwards.
  • the upper edge of the silicon wafer 5 abuts an inclined surface 31 and is pushed away from the latter by a further upward movement of the transport stamp 29 in the direction of the arrow 32.
  • the silicon wafer 5 enters the cleaning station 20 and rolls on the inclined track 9 until it is stopped by stoppers 11. In this position, the silicon wafer 5 is on both sides cleaned.
  • rotary drive elements 14 are also shown, which set the silicon wafer 5 in a rotational movement in the direction of the arrow 33, which is also possible in the station 20.
  • FIG. 1 Another variant for loading the cleaning station 20 is shown in FIG.
  • the magazine 4 is pivoted there in such a way that the silicon wafer 5 can enter the cleaning station 20 by gravity from the magazine 4 and the feed station 26.
  • An aperture 34 ensures that only the desired silicon wafer 5 leaves the feed station 26, which only allows the desired silicon wafer 5 to pass through and retains the remaining wafers in the feed station 26.
  • a pivotable magazine 27 with a collecting station 28 is provided, into which the silicon wafer 5 enters through an aperture 35 (FIG. 6).
  • the disk 5 emerging from the rinsing station 22 can also be gripped by a gripper 36 and clipped into the collecting station 28 of the magazine 27.
  • arrows 37 can be seen in the rinsing station, with which the direction of flow of rinsing liquid onto the disk 5 is indicated. In this way, the disc 5 can also be rotated so that it rotates in the direction of arrow 33.
  • Figure 8 shows a transport device for the substrate transport, the silicon wafer 5 by means of transport rollers 40, the "spaced" on a Conveyor belt 41 are attached, is moved.
  • the transport rollers 40 are arranged such that a silicon wafer 5 always comes to rest between two transport rollers 40 and the distance to the next pair of transport rollers 40 remains unoccupied. In this way, a minimal contact surface of the substrates 5 is achieved.
  • the lateral guidance of the disks 5 takes place by means of guide elements 7, which are designed here as guide strips.
  • the substrate 5 is lifted from below from the conveyor belt 41 by rollers 42, which are resiliently mounted and serve as a lifting mechanism, so that the silicon wafer 5 is located outside the contact area with the transport rollers 40.
  • Drive rollers 14, which set the silicon wafers 5 in rotation, are provided opposite the rollers 42 as rotary drive elements 14. These drive rollers 14 are pressed against the silicon wafer 5, the pressing force being regulated by the spring force which counteracts it.
  • the guide bar can be moved upwards, so that the silicon wafers can be removed from the conveyor belt 41 from the side.
  • FIG. 9 shows an alternative embodiment, the silicon wafers 5 being driven by drive rollers 14 serving as rotary drive elements, which can be moved in the direction of one another until they clamp the substrate 5 between them and lift them out of the conveyor belt 41 and the engagement of the transport rollers 40 Rotation.
  • the drive rollers 14 there is a further guide roller 43 which can be moved in the direction of the substrate 5 and which is spring-mounted. With this three-point bearing, the silicon wafer is held during the treatment.
  • FIG. 10 shows a further embodiment of the invention, the transport rollers 40 being designed as rotary drive elements 14. The disk 5 is held and its rotary drive is carried out by means of the third roller 43, which can be moved in the direction of the disk 5 and clamps the silicon wafer 5 in a resilient manner.
  • FIG. 11 shows the contactless guidance of the silicon wafers 5 by means of spray nozzles 44.
  • brushes 50, 51 are used which act on the rotating silicon wafer 5 (FIG. 12).
  • the brushes 50, 51 are nylon or sponge brushes (sponge brush roller).
  • the brushes 50, 51 are pressed for cleaning in a rotating manner and with a certain contact pressure against the silicon wafer 5, as a result of which the rotation of the wafer 5 is braked.
  • only one of the brushes 50 extends or rotates over the entire substrate diameter.
  • the other brush 51 extends or rotates only over part of the substrate diameter, but in order to ensure cleaning of the substrate center, this brush 51 also extends beyond the center of the substrate.
  • FIG. 13 shows a drying station for spin drying, in which the substrate 5 is held at its edge area within the closed centrifugal chamber 53 by means of a gripper 19, the gripper 19 being drivable via a shaft 54.
  • the centrifugal chamber 53 consists of two halves 55 and 56 which are moved apart for loading and unloading.
  • the substrate 5 is rotated for drying.
  • the centrifugal forces that act on the center of the substrate are supported by gravity, which also acts on the water drops that are on the substrate 5.
  • an alcohol-gas mixture has been introduced into the centrifugal chamber 53, so that there is an alcohol atmosphere therein.
  • the centrifugal chamber 53 is opened so that the moisture in the centrifugal chamber 53 is reduced and the substrate 5 dries completely.
  • dry gas which has been preheated and which is used to absorb the residual moisture can also be introduced through the inlets 58.

Abstract

The invention relates to a method and a device for treating or processing two-dimensional substrates such as silicon slices (wafers) for producing microelectronic components. According to the invention, said two-dimensional substrates are treated or processed in vertical alignment.

Description

Verfahren und Vorrichtung zum Behandeln von flächigen Substraten, insbesondere Silizium-Scheiben ( afer) zur Herstellung mikroelektronischer BauelementeMethod and device for treating flat substrates, in particular silicon wafers (afer) for the production of microelectronic components
Beschreibungdescription
Die Erfindung betrifft ein Verfahren und eine Vorrichtung zum Behandeln bzw. Bearbeiten von flächigen Substraten, insbesondere Silizium-Scheiben (Wafer) zur Herstellung mikroelektronischer Bauelemente .The invention relates to a method and a device for treating or processing flat substrates, in particular silicon wafers for producing microelectronic components.
Substrate für Bauelemente der Mikroelektronik, z.B. Silizium-Scheiben, die auch Wafer genannt werden, erfordern extrem saubere Oberflächen, die wiederholte Reinigungsprozesse (Behandlungen) während der Herstellung eines Chips erforderlich machen. Die Anforderung an die Reinigungsverfahren macht es notwendig, die Substrate beidseitig und an allen Stellen der Oberfläche zu reinigen. Insbesondere bei physikalischen Reinigungsverfahren erfolgt vorwiegend eine Einzelsubstratreinigung im Nassverfahren, z.B. durch Bürsten, Ultraschall, Megaschall, Hochdruck usw. Hierzu muss das Substrat innerhalb der Reinigungsanlage vorwiegend im nassen Zustand zu den einzelnen Reinigungsstationen transportiert werden. Dies erfolgt bei der Einzelsubstratbearbeitung vorwiegend in horizontaler Substratlage durch Handlingroboter, die das Substrat z.B. an der Unterseite entweder durch Unterdruck halten oder seitlich klemmen, oder dies erfolgt durch geeignete Auflagen an Transportbändern, Rollen usw., die den Transport ermöglichen. Die Kontaktierung der Oberfläche durch das Handling (sowohl der Vorderseite als auch der Rückseite) führt zur Kontamination mit Schmutzteilen (Partikel) . Zudem sind die in Reinsträumen eingesetzten Handling-Systeme sehr aufwendig und teuer. Die vorwiegend für die horizontale Positionierung der Substrate ausgeführten Reinigungssysteme benötigen mit größer werdenden Substratabmessungen zudem sehr große Stellflächen in den Reinräumen, welche folglich auch sehr teuer sind. Außerdem ist die Partikelansammlung auf den horizontalen Oberflächen der Substrate selbst in Reinräumen gegeben. Allein durch die aufprallende laminar geführte Reinraumluft, welche Restpartikel enthält, auf die große Substratoberfläche werden die Silizium-Scheiben erheblich kontaminiert.Substrates for components in microelectronics, for example silicon wafers, which are also called wafers, require extremely clean surfaces, which necessitate repeated cleaning processes (treatments) during the production of a chip. The requirements for the cleaning process make it necessary to clean the substrates on both sides and at all points on the surface. In particular in the case of physical cleaning processes, individual substrate cleaning is predominantly carried out using the wet process, for example by brushing, ultrasound, megasound, high pressure, etc. For this purpose, the substrate must be transported to the individual cleaning stations predominantly in the wet state. In the case of single substrate processing, this is carried out predominantly in a horizontal substrate position by handling robots, which hold the substrate, for example on the underside, either by means of negative pressure or clamp it to the side, or this is done by means of suitable supports on conveyor belts, rollers, etc., which enable transport. The contacting of the surface by the handling (both the front and the back) leads to contamination with dirt particles (particles). In addition, the handling systems used in clean rooms are very complex and expensive. The predominantly Cleaning systems designed for the horizontal positioning of the substrates also require very large footprints in the cleanrooms with increasing substrate dimensions, which are consequently also very expensive. In addition, there is particle accumulation on the horizontal surfaces of the substrates even in cleanrooms. The silicon wafers are considerably contaminated solely by the impact of the laminar-guided clean room air, which contains residual particles, on the large substrate surface.
Dasselbe gilt im wesentlichen für die Reinigung von Rigid- Disks (Metallsubstraten) oder für die Herstellung von mikroelektronischen Bauelementen, die allgemein auch Chips genannt werden, auf z.B. runden Silizium-Scheiben durch Verwendung photolithographischer Prozesse, indem die Strukturen auf der Substratoberfläche aufgebrachte photosensibler Lacke durch Masken belichtet werden. Die photosensible Lackschicht (Photoresis ) wird dabei in horizontaler Lage auf das Substrat aufgeschleudert , wobei auch die nachfolgenden Prozesse wie Trocknen der Lackschicht, Belichten, Entwickeln, Ätzen usw., Aufbringen von Haftvermittlern vor Aufbringung der Lackschicht, ebenfalls ausschließlich in horizontaler Substratposition erfolgen. Das Handling zwischen den einzelnen Bearbeitungsschritten erfolgt durch aufwendige reinraumtaugliche Handlingroboter .The same applies essentially to the cleaning of rigid disks (metal substrates) or to the production of microelectronic components, which are generally also called chips, on e.g. round silicon wafers by using photolithographic processes, in that the structures on the substrate surface of photosensitive coatings are exposed through masks. The photosensitive lacquer layer (photoresis) is spun onto the substrate in a horizontal position, with the subsequent processes such as drying the lacquer layer, exposing, developing, etching, etc., applying adhesion promoters before applying the lacquer layer, likewise exclusively in a horizontal substrate position. The handling between the individual processing steps is carried out by complex cleanroom-compatible handling robots.
Schließlich ist es bekannt, Einzelscheiben, nach einer Naßbehandlung horizontal liegend trockenzuschleudern. Hierzu sind hohe Drehzahlen notwendig (über 1000 bis 5000 1/min) , weil durch die Oberflächenspannung die Wassertropfen, die sich vom vorhergehenden Naßprozeß auf der Scheibe befinden, in sich sehr stabil sind und in der Substratmitte auf der Oberfläche haften. In der Substratmitte wirken nur geringe Zentrifugalkräfte, so daß letztlich die Trockung nur durch sehr hohe Drehzahlen möglich ist, um ausreichende Kräfte in der Substratmitte zu erreichen. Hierdurch entstehen Turbulenzen, die zwar die Trockung fördern. Allerdings werden durch die Turbulenzen Partikel aufgewirbelt, die zu einer Kontamination der gereinigten Oberfläche führen.Finally, it is known to spin dry individual disks lying horizontally after a wet treatment. This requires high speeds (over 1000 to 5000 1 / min) because the surface tension means that the water droplets that are on the disc from the previous wet process are very stable and adhere to the surface in the middle of the substrate. In the Only small centrifugal forces act in the center of the substrate, so that ultimately drying is only possible at very high speeds in order to achieve sufficient forces in the center of the substrate. This creates turbulence that promotes drying. However, the turbulence whirls up particles that lead to contamination of the cleaned surface.
Weitere Trocknungsmöglichkeiten, wie das Blasen von Stickstoff auf die Substratmitte, erzeugen ebenfalls Turbulenzen, mit den gleichen Auswirkungen. Durch zusätzliche Erwärmung der Oberfläche (Infrarot, Laser) kann der Trocknungsprozeß unterstützt werden. Dabei entstehen jedoch Verdampfungsprozesse, die zur Fohge haben, daß Rückstände im Spülwasser Trocknungsflecken auf der Substratoberfläche hinterlassen. DerartigeOther drying options, such as blowing nitrogen onto the center of the substrate, also create turbulence with the same effects. The drying process can be supported by additional heating of the surface (infrared, laser). However, evaporation processes occur, which have the result that residues in the rinsing water leave drying spots on the substrate surface. such
Trocknungsflecken sind ebenfalls Partikel und somit bei der Chip-Herstellung unerwünscht.Drying spots are also particles and are therefore undesirable in chip manufacture.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren und/oder eine Vorrichtung bereit zu stellen, mit welchen derartige Substrate besser und vor allem auch preiswerter behandelt bzw. bearbeitet werden können.The invention has for its object to provide a method and / or a device with which such substrates can be treated and processed better and, above all, cheaper.
Diese Aufgabe wird erfindungsgemäß durch ein Verfahren der eingangs genannten Art gelöst, bei dem die flächigen Substrate, insbesondere die Silizium-Scheiben derart ausgerichtet werden, daß die Scheibenebene im Wesentlichen vertikal verläuft und dass die Scheiben in dieser (vertikalen) Ausrichtung wenigstens eine Behandlungsstation durchlaufen. Sie laufen also in vertikaler Ausrichtung in die Behandlungsstation hinein, werden dort in vertikaler Ausrichtung behandelt und verlassen diese wieder in vertikaler Ausrichtung. Zwar bestehet die Möglichkeit, daß sie in vertikaler Ausrichtung quer verlagert werden, jedoch behalten sie ihre vertikale Ausrichtung bei.This object is achieved according to the invention by a method of the type mentioned in the introduction, in which the flat substrates, in particular the silicon wafers, are aligned in such a way that the wafer plane runs essentially vertically and that the wafers pass through at least one treatment station in this (vertical) alignment. They therefore run into the treatment station in a vertical orientation, are treated there in a vertical orientation and leave it again in a vertical orientation. There is a possibility that they are moved transversely in a vertical orientation, but they retain their vertical orientation.
Durch die Ausrichtung der Substrate bzw. Scheiben in vertikaler Ausrichtung wird die relativ teuere Stellfläche in den Reinräumen wesentlich vermindert und es wird der Vorteil erzielt, dass sich auf den Scheibenoberflächen wesentlich weniger Schmutzpartikel ablagern bzw. auf diese aufprallen, so daß die Kontamination im Reinraum ebenfalls verringert ist. Außerdem sind derartige Anlagen wesentlich einfacher auf andere Scheibenabmessungen umrüstbar.By aligning the substrates or disks in a vertical orientation, the relatively expensive footprint in the clean rooms is significantly reduced and the advantage is achieved that significantly less dirt particles are deposited on or hit the disk surfaces, so that the contamination in the clean room also is reduced. In addition, such systems are much easier to convert to other disc dimensions.
Die Silizium-Scheiben können über Handlingroboter transportiert werden. Dabei werden die Scheiben an ihren Rändern ergriffen, wofür z.B. konische Ausnehmungen an den Robotern dienen können.The silicon wafers can be transported using handling robots. The discs are gripped at their edges, for which purpose e.g. conical recesses on the robots can serve.
Bei Kreisscheiben kann ein einfacher Transport dadurch erzielt werden, dass die Scheiben dieIn the case of circular disks, simple transportation can be achieved by the disks being the
Behandlungsstation (en) , welche geneigt angeordnet ist (sind) , unter Schwerkraft durchlaufen, insbesondere durchrollen. Es werden somit keine separaten Transporteinrichtungen (Handlingroboter) benötigt, wodurch die Anlage relativ preiswert wird. Insbesondere durchlaufen die Scheiben mehrere Behandlungsstationen, die hintereinander angeordnet sind.Treatment station (s), which are arranged inclined, pass through gravity, in particular roll through. There is therefore no need for separate transport devices (handling robots), which makes the system relatively inexpensive. In particular, the disks pass through several treatment stations which are arranged one behind the other.
Möglich ist jedoch auch, den Substrattransport mittels Führungs- oder Transportrollen bzw. Transportelementen durchzuführen, die auf einem Transportband angeordnet sind. Hierbei können der Abstand zwischen den Transportrollen bzw. -elementen sowie Anzahl und Größe derselben den Abmessungen der zu bearbeitenden Substrate bzw. der Silizium-Scheiben derart angepaßt sein, daß eine möglichst minimale Auflagefläche im Randbereich des Substrates auf den Transportrollen bzw. -elementen erreicht wird.However, it is also possible to carry out the substrate transport by means of guide or transport rollers or transport elements which are arranged on a transport belt. Here, the distance between the transport rollers or elements and the number and size of the same can be adapted to the dimensions of the substrates to be processed or the silicon wafers in such a way that one is as possible minimal contact area is achieved in the edge region of the substrate on the transport rollers or elements.
Die seitliche Führung und damit Stabilisierung der vertikalen Ausrichtung der Silizium-Scheiben kann berührungslos oder in Kontakt mit der Substratoberfläche erfolgen, je nach Anforderungen und Bearbeitungsprozeß. Beispielsweise ist eine berührungslose Führung bei Naßprozessen durch beidseits des Substrates angeordnete Sprühdüsen oder durch mit Wasser oder einer anderen Flüssigkeit benetzte Führungsrollen oder -leisten möglich, so daß das Substrat nur einen Flächenkontakt mit dem Flüssikeitsfilm oder dem Flüssigkeitsstrahl hat. Zur berührungslosen Führung bei Trockenprozessen kommt die Führung durch Luft- oder N2-Bedüsung in Betracht. Es ist auch möglich, die Substrate über Luftkissen, die zwischen Substrat und Führungsrollen bzw. -leisten erzeugt werden, zu führen.The lateral guidance and thus stabilization of the vertical alignment of the silicon wafers can take place without contact or in contact with the substrate surface, depending on the requirements and the machining process. For example, contactless guidance in wet processes is possible by spray nozzles arranged on both sides of the substrate or by guide rollers or strips wetted with water or another liquid, so that the substrate has only surface contact with the liquid film or the liquid jet. For contactless guidance in drying processes, guidance by air or N 2 spraying can be considered. It is also possible to guide the substrates over air cushions that are generated between the substrate and guide rollers or strips.
Eine kontaktbehaftete Führung kann mittels Rollen oder Führungsleisten erfolgen, die im Randbereich oder seitlich das Substrat führen.Contact-based guidance can take place by means of rollers or guide strips which guide the substrate in the edge region or laterally.
Die zumeist notwendige Drehung der Substrate zur Behandlung bzw. Bearbeitung kann durch Abheben der Substrate vom Transportband erfolgen, wobei das Substrat gegen als Drehantriebselemente ausgebildete Antriebsrollen gedrückt wird, die einseitig oder an zwei gegenüberliegenden Seiten der Silizium-Scheibe angreifen und diese zwischen sich bzw. zwischen sich und den Transportrollen bzw. den Rollen des Aushebemechanismus klemmen. Die Regelung des Klemmdrucks kann mittels Federelementen, Druckaufnehmern oder auch elektronisch geregelt erfolgen, mit denen die Antriebsrolle und/oder der Aushebemechanismus gekoppelt ist. Es ist auch möglich, daß die Transportrollen selbst als Antriebsrollen ausgebildet sind. Es besteht auch die Möglichkeit, daß die Substrate nur über ihre Gewichtskraft auf den Drehantrieben aufliegen und z.B. mittels Haltevorrichtungen in der vertikalen Ausrichtung gehalten werden.The mostly necessary rotation of the substrates for treatment or processing can take place by lifting the substrates off the conveyor belt, the substrate being pressed against drive rollers designed as rotary drive elements, which act on one side or on two opposite sides of the silicon wafer and between them or between them yourself and the transport rollers or the rollers of the lifting mechanism. The clamping pressure can be regulated by means of spring elements, pressure transducers or also electronically controlled, with which the drive roller and / or the lifting mechanism is coupled. It is also possible that the transport rollers themselves are designed as drive rollers. There is also the possibility that the substrates rest on the rotary drives only by their weight and can be held in the vertical orientation by means of holding devices, for example.
Um optimale Behandlungsergebnisse zu erzielen, werden die Scheiben während der Behandlung angehalten und/oder gedreht. Sie verbleiben in den einzelnen Behandlungsstationen so lange, bis das gewünschte Arbeitsergebnis erzielt ist.In order to achieve optimal treatment results, the discs are stopped and / or rotated during the treatment. They remain in the individual treatment stations until the desired work result is achieved.
Bei kreisförmigen Silizium-Scheiben durchlaufen diese auf ihren Rändern die Behandlungsstationen. Eine Variante sieht vor, daß Kreisscheiben oder nicht kreisförmige Scheiben in kreisringförmige Adapter integriert werden und über diese die einzelnen Behandlungsstationen durchlaufen.In the case of circular silicon wafers, these pass through the treatment stations on their edges. A variant provides that circular disks or non-circular disks are integrated into annular adapters and pass through the individual treatment stations via them.
Das Verfahren kann z.B. ein Reinigungs- oder Trocknungsverfahren, aber auch ein photolithographisches Behandlungsverfahren sein, wobei beim Reinigen der Silizium-Scheiben fluide Medien auf wenigstens eine, insbesondere beide Oberflächen der Silizium-Scheiben geleitet werden.The method can e.g. a cleaning or drying process, but also a photolithographic treatment process, wherein, when cleaning the silicon wafers, fluid media are directed onto at least one, in particular both surfaces of the silicon wafers.
Das Verfahren kann auch ein Spin-Trocknungsverfahren sein, bei dem zusätzlich zu der wenn auch reduzierten Zentrifugalkraft in der Scheibenmitte die Schwerkraft auf die in der Mitte des Substrates befindlichen Wassertropfen wirkt.The process can also be a spin drying process, in which, in addition to the reduced centrifugal force in the center of the disc, gravity acts on the water drops located in the center of the substrate.
Hierbei kann weiterhin vorgesehen sein, daß in die Behandlungsstation ein Gas-Alkohol-Gemisch, z.B. Stickstoff mit Isopropanol, eingeleitet wird, um die Oberflächenspannung des Wassers weiter zu reduzieren. Hierdurch können die für das Abschleudern des Wassers erforderlichen Zentrifugalkräfte und damit die Drehzahl weiter reduziert werden.It can further be provided that a gas-alcohol mixture, for example nitrogen with isopropanol, is introduced into the treatment station in order to further reduce the surface tension of the water. This can the centrifugal forces required to spin off the water and thus the speed are further reduced.
Die eingangs genannte Aufgabe wird außerdem mittels einer Vorrichtung zur Durchführung des o.g. Verfahrens dadurch gelöst, dass die Behandlungsstation einen vertikalen Einlass für die vertikal ausgerichteten Scheiben, eine Transportstrecke für die Scheiben in vertikaler Ausrichtung und einen vertikalen Auslass aufweist . Die Transportstrecke kann mit Führungselementen zur Führung der Scheiben in vertikaler Ausrichtung ausgestattet sein. Desweiteren kann zum Beispiel eine schiefe Ebene als Transportstrecke (Führungsbahn) dienen.The above-mentioned task is also achieved by means of a device for carrying out the above. Method solved in that the treatment station has a vertical inlet for the vertically aligned disks, a transport path for the disks in a vertical orientation and a vertical outlet. The transport route can be equipped with guide elements for guiding the disks in a vertical orientation. Furthermore, an inclined plane can serve as a transport route (guideway), for example.
Bei der erfindungsgemäßen Vorrichtung durchlaufen die Scheiben in vertikaler Ausrichtung die einzelnen Behandlungsstationen, so dass die Scheiben beidseitig bearbeitet werden können. Werden Dampfphasen oder Nassprozesse verwendet, z.B. beim Reinigen, beim Aufbringen eines Haftvermittlers, beim Entwickeln, beim Ätzen, beim Spülen usw., können die einzelnen Stationen so angeordnet sein, dass die Fluide kaskadenartig verwendet werden, d.h. das Fluid einer nachfolgenden Station wird anschließend in einer vorausgehenden Station, in welcher z.B. eine Vorbehandlung oder eine andere Seite des Substrats behandelt wird, verwendet. Dies hat den Vorteil, daß nur noch ein Bruchteil der Fluide benötigt wird.In the device according to the invention, the disks pass through the individual treatment stations in a vertical orientation, so that the disks can be processed on both sides. If vapor phases or wet processes are used, e.g. when cleaning, applying an adhesion promoter, developing, etching, rinsing, etc., the individual stations can be arranged in such a way that the fluids are used in a cascade manner, i.e. the fluid of a subsequent station is then in a preceding station, in which e.g. a pretreatment or other side of the substrate is used. This has the advantage that only a fraction of the fluids are required.
Die Fluide können dann ohne weiteres ablaufen und die Schmutzpartikel mitnehmen und abtransportieren. Spezieller Wendevorrichtungen für die Scheiben bedarf es innerhalb der Behandlungsstationen nicht, da die Scheiben vertikal in die Behandlungsstationen (z.B. Reinigungsstationen) einlaufen und vertikal diese wieder verlassen. Weiterhin kann vorgesehen sein, daß die Scheiben aus der Führungsbahn entnehmbar bzw. ausschleusbar und einer separaten Bearbeitungszone zuführbar sind. In dieser Zone können weitere Bearbeitungs- bzw. Behandlungsschritte durchgeführt werden, die z.B. nicht in hintereinander geschalteten Stationen durchführbar sind; so beispielsweise das Spin-Trocknungsverfahren oder die nachfolgend aufgeführten Verfahren. Dabei nimmt die Scheibe aber nach wie vor eine vertikale Lage ein.The fluids can then drain off easily and take the dirt particles with them and transport them away. Special turning devices for the panes are not required within the treatment stations, since the panes enter the treatment stations vertically (for example cleaning stations) and leave them vertically again. Furthermore, it can be provided that the disks can be removed or discharged from the guideway and fed to a separate processing zone. In this zone, further processing or treatment steps can be carried out which, for example, cannot be carried out in successive stations; for example the spin drying process or the processes listed below. However, the disc is still in a vertical position.
Vorteilhaft sind Stationen zum Auftragen eines Haftvermittlers, zur Behandlung mit Photolacken, Schutzlacken, Ausgleichslackschichten, zum Trocknen, zur Entwicklung, zur Spülung, für die Nassprozesse wie Ätzen usw., zum Belichten usw. vorgesehen. In allen diesen Stationen können die Substrate in vertikaler Ausrichtung behandelt werden.Stations for applying an adhesion promoter, for treating with photoresists, protective lacquers, compensating lacquer layers, for drying, for development, for rinsing, for wet processes such as etching etc., for exposure etc. are advantageously provided. In all of these stations, the substrates can be treated in a vertical orientation.
So kann zum Beispiel eine Station zur Bürstenreinigung vorgesehen sein, bei der die Silizium-Scheibe in Rotation versetzt wird und diese Rotation mittels beidseitig auf die Oberfläche drückender angetriebener (rotierender) Bürsten unterstützt wird, wobei eine der Bürsten (z.B. Nylonbürsten, Schwammbürsten) sich über den gesamten Substratdurchmesser und die andere Bürste sich nur über einen Teil des Substratdurchmessers erstreckt bzw. nur über einen Teil des Substratdurchmessers rotiert oder sich beide Bürsten nur über einen Teil des Substratdurchmessers erstrecken bzw. nur über einen Teil desFor example, a station for brush cleaning can be provided, in which the silicon wafer is set in rotation and this rotation is supported by driven (rotating) brushes pressing on both sides of the surface, whereby one of the brushes (e.g. nylon brushes, sponge brushes) overlaps the entire substrate diameter and the other brush extends only over part of the substrate diameter or rotates only over part of the substrate diameter, or both brushes extend over only part of the substrate diameter or only over part of the
Substratdurchmessers rotieren. Der Drehsinn der Bürsten wird dabei zweckmäßig so gewählt, daß die Rotation der Scheibe unterstützt wird. Bei der Bürstenreinigung besteht das Problem, daß die Bürsten, um einen Reinigungseffekt zu erzielen, mehr oder weniger stark gegen die Substratoberfläche gedrückt werden müssen. Durch dieses Andrücken wird jedoch die Silizium- Scheibe in ihrer Rotation abgebremst . Um dem entgegenzuwirken, müßte die Klemmkraft, mittels der das Substrat während der Behandlung gehalten wird, erheblich erhöht werden, was jedoch zu Beschädigungen der Kristallstrukturen führen kann. Dem kann dadurch entgegengewirkt werden, daß eine der Bürsten lediglich über einen Teildurchmesser der Silizium-Scheibe rotiert. Hierdurch wird die Drehbewegung des Substrates unterstützt. Durch die Wahl der Andruckkraft der Bürsten und deren Drehzahl kann die Reinigungsleistung variiert werden.Rotate substrate diameter. The direction of rotation of the brushes is expediently chosen so that the rotation of the disc is supported. The problem with brush cleaning is that the brushes have to be pressed more or less strongly against the substrate surface in order to achieve a cleaning effect. This pressure, however, slows down the rotation of the silicon wafer. To counteract this, the clamping force by means of which the substrate is held during the treatment would have to be increased considerably, but this can lead to damage to the crystal structures. This can be counteracted by one of the brushes rotating only over a partial diameter of the silicon wafer. This supports the rotational movement of the substrate. The cleaning performance can be varied by selecting the contact pressure of the brushes and their speed.
Während des Bürstens kann die Oberfläche des Substrates mit Wasser besprüht werden, um den Bürsten die für die Reinigung notwendige Feuchtigkeit zu verleihen.During the brushing, the surface of the substrate can be sprayed with water to give the brushes the moisture necessary for cleaning.
Insbesondere kann vorgesehen sein, daß die Bürsten über die Substratmitte hinweg wirken, um auch das SubstratZentrum zu reinigen. Das heißt, beide Bürsten erstrecken sich über das Substratzentrum hinweg.In particular, it can be provided that the brushes act beyond the center of the substrate in order to also clean the substrate center. That is, both brushes extend across the substrate center.
Bei einer Behandlungstation, die dem Spin-Trocknen dient und als Schleuderkammer ausgebildet ist, kann vorgesehen sein, diese geschlossen und nur zum Be- und Entladen offenbar auszugestalten. Hierzu kann die Kammer z.B. aus zwei Hälften bestehen, die zueinander verfahrbar sind. Das Substrat wird mittels eines an den Rändern des Substrates angreifenden Greifers (Substrathalters) in der Kammer gehalten. Das abgeschleuderte Wasser wird mittels einer Absaugeinrichtung aus der Schleuderkammer entfernt. Desweiteren kann die Station mit Zuführungen für trockenes und/oder vorgewärmtes Gas (z.B. Stickstoff) ausgestattet sein, wodurch die Trocknung verbessert werden kann, da hierdurch die Feuchtigkeit nach Beendigung der Rotation in der Schleuderkammer reduziert werden kann.In the case of a treatment station which is used for spin drying and is designed as a centrifugal chamber, it can be provided that it is closed and apparently designed only for loading and unloading. For this purpose, the chamber can consist, for example, of two halves which can be moved relative to one another. The substrate is held in the chamber by means of a gripper (substrate holder) which engages on the edges of the substrate. The centrifuged water is removed from the centrifugal chamber by means of a suction device. Furthermore, the station can be equipped with feeders for dry and / or preheated gas (eg nitrogen) can be provided, which can improve the drying, since this can reduce the moisture in the centrifugal chamber after the rotation has ended.
Da die Führungselemente die Scheiben lediglich an den seitlichen Randbereichen berühren, ist eine beidseitige Behandlung einfach möglich und die Kontamination der Scheiben mit Partikeln auf ein Minimum begrenzt. Und die mechanische Belastung des Substrates beim Transport ist entsprechend gering.Since the guide elements only touch the panes at the lateral edge areas, treatment on both sides is easily possible and the contamination of the panes with particles is kept to a minimum. And the mechanical stress on the substrate during transport is correspondingly low.
Die Behandlungsstation ist mit geneigten Laufbahnen für die Scheiben versehen, so dass die Scheiben unter Schwerkraft die Behandlungsstation durchrollen können. Antriebe hierfür sind nicht erforderlich. Vorteilhaft ist die Behandlungsstation mit wenigstens einem Stopper für die Scheiben versehen, so dass die Scheiben (Substrate) die erforderliche bzw. eine vorgegebene Behandlungszeit in der Station verweilen können. Anschießend können sie für den Weitertransport freigegeben werden.The treatment station is provided with inclined raceways for the disks, so that the disks can roll through the treatment station under gravity. Drives for this are not required. The treatment station is advantageously provided with at least one stop for the disks, so that the disks (substrates) can remain in the station for the required or a predetermined treatment time. They can then be released for further transport.
Innerhalb der Behandlungsstation sind vorteilhaft Drehantriebselemente vorgesehen, über welche die Scheiben in eine Drehbewegung versetzt werden, ohne dass sie transportiert werden, d.h. sie können während ihres Aufenthalts in der Station um ihre Zentralachse gedreht werden.Rotary drive elements are advantageously provided within the treatment station, by means of which the disks are set in a rotational movement without being transported, i.e. they can be rotated about their central axis during their stay in the station.
Vorteilhaft ist eine Zuführstation und/oder eine Auffangstation, die ein Magazin enthalten kann oder als solches ausgebildet ist, vorgesehen. In der Zuführstation und/oder in der Auffangstation werden eine Vielzahl Scheiben nebeneinander bereitgehalten und einzeln über Blenden den Behandlungsstationen zugeführt. Die Lagerung der Scheiben in den Magazinen kann in vertikaler Ausrichtung erfolgen. Durch die Blende kann lediglich eine einzige Scheibe der Zuführstation zugeführt werden bzw. in die Auffangstation gelangen, wobei über die Blende die anderen in der Zuführstation bzw. Auffangstation sich befindenden Scheiben zurückgehalten werden.A feed station and / or a collecting station, which can contain a magazine or is designed as such, is advantageously provided. In the feed station and / or in the collecting station, a large number of slices are kept ready next to one another and individually over Apertures fed to the treatment stations. The discs can be stored in the magazines in a vertical orientation. Only a single slice can be fed to the feed station or reach the collecting station through the diaphragm, the other slices located in the feed station or collecting station being retained via the diaphragm.
Die Zuführstation und/oder die Auffangstation können kippbar gelagert werden, so dass die Scheiben unter Schwerkraft austreten bzw. in die Station eintreten können, d.h. die gewünschte Scheibe fällt über den Einlaß in die Station.The feed station and / or the collecting station can be tilted so that the disks exit under gravity or can enter the station, i.e. the desired pane falls over the inlet into the station.
Eine andere Möglichkeit des Transports der Scheiben aus der Zuführstation bzw. der Auffangstation besteht darin, dass die Zuführstation bzw. die Auffangstation einen die Scheiben in die bzw. aus der Behandlungsstation überführenden Stempel aufweist.Another possibility of transporting the disks from the feed station or the collecting station is that the feeding station or the collecting station has a stamp which transfers the disks into or out of the treatment station.
Zum Be- und Entladen können die Führungselemente so gestaltet sein, daß sie aus dem Scheibenbereich heraus verfahren werden können. Hierdurch wird ein seitliches Be- und Entladen des Transportbandes bzw. des Laufbandes ermöglicht .For loading and unloading, the guide elements can be designed so that they can be moved out of the pane area. This enables lateral loading and unloading of the conveyor belt or the treadmill.
Die Trocknung kann als weitere Station der Spülstation nachgeschaltet sein oder als separate Station ausgeführt sein, in welcher eine Alkohol -Dampftrocknung oder eine Marangoni-Trocknung erfolgt.The drying can be arranged as a further station downstream of the rinsing station or as a separate station in which alcohol-steam drying or marangoni drying takes place.
Weitere Vorteile, Merkmale und Einzelheiten der Erfindung ergeben sich aus den Unteransprüchen sowie der nachfolgenden Beschreibung, in der unter Bezugnahme auf die Zeichnung besonders bevorzugte Ausführungsbeispiele im einzelnen beschrieben sind. Dabei können die in der Zeichnung dargestellten und in den Ansprüchen sowie der Beschreibung erwähnten Merkmale jeweils einzeln für sich oder in beliebiger Kombination erfindungswesentlich sein. In der Zeichnung zeigen:Further advantages, features and details of the invention emerge from the subclaims and the following description, in which with reference to the Drawing particularly preferred embodiments are described in detail. The features shown in the drawing and mentioned in the claims and the description can be essential to the invention individually or in any combination. The drawing shows:
Figur 1 einen Ausschnitt aus einer Bearbeitungs- Vorrichtung mit vertikal angeordneten Silizium- Scheiben;1 shows a section of a processing device with vertically arranged silicon wafers;
Figur 2 eine Station, in welcher das Substrat einen Bearbeitungsprozess durchläuft;Figure 2 shows a station in which the substrate undergoes a processing process;
Figur 3 eine Variante der Vorrichtung mit Zuführstation und Auffangstation;Figure 3 shows a variant of the device with feed station and collecting station;
Figur 4 eine weitere Variante mit einer Zuführstation, welche einen Stempel aufweist;Figure 4 shows a further variant with a feed station which has a stamp;
Figur 5 eine Variante der Vorrichtung mit einer kippbaren ZuführStation;Figure 5 shows a variant of the device with a tiltable feed station;
Figur 6 eine Variante der Auffangstation, welche kippbar ausgebildet ist;FIG. 6 shows a variant of the collecting station, which is designed to be tiltable;
Figur 7 eine weitere Variante der Auffangstation, in welche die Scheiben mittels eines Transportselements eingesetzt werden;FIG. 7 shows a further variant of the collecting station in which the disks are inserted by means of a transport element;
Figur 8 eine Ausgestaltung des Substrattransportes mit Drehantriebseinrichtung ; Figur 9 eine Ausgestaltung derFIG. 8 shows an embodiment of the substrate transport with a rotary drive device; Figure 9 shows an embodiment of the
Substrattransporteinrichtung mit alternativer Drehantriebseinrichtung;Substrate transport device with alternative rotary drive device;
Figur 10 eine Ausgestaltung derFigure 10 shows an embodiment of the
Substrattransporteinrichtung, bei dem die Transportrollen als Drehantriebselementen ausgebildet sind;Substrate transport device, in which the transport rollers are designed as rotary drive elements;
Figur 11 eine berührungslose Führungseinrichtung für die Silizium-Scheiben;FIG. 11 shows a contactless guide device for the silicon wafers;
Figur 12 eine mit Bürsten ausgerüstete Reinigungsstation;FIG. 12 a cleaning station equipped with brushes;
Figur 13 eine Trocknungseinrichtung mit Schleuderkammer .Figure 13 shows a drying device with a centrifugal chamber.
In der Figur 1 sind zwei Stationen 1 und 2 einer Bearbeitungsvorrichtung 3 sowie ein Magazin 4 gezeigt, in welchem Silizium-Scheiben bevorratet sind. Aus diesem Magazin 4 werden die Silizium-Scheiben 5 z.B. durch Verkippen des Magazins 4 in Richtung des Pfeils 6 oder durch ein Handling-System in die erste Station 1 in vertikaler Ausrichtung eingeführt . In der Station 1 werden die Substrate, im Folgenden als Silizium-Scheiben 5 bezeichnet, über Führungselemente 7 und 8 an ihren Rändern gegen Umkippen gehalten. Da die Führungselemente 7 und 8 geneigt angeordnet sind und das Führungselement 8 eine Laufbahn 9 bildet, rollt die Silizium-Scheibe 5 durch Schwerkraft in Transportrichtung, d.h. in Richtung des Pfeils 10. In der Station 1 wird die Silizium-Scheibe 5 von einem Stopper 11 gehalten, so dass sie in dieser Position gehalten wird und bearbeitet werden kann. Dort kann die Silizium-Scheibe 5 z.B. mittels eines Drehantriebselements 14 in Drehung versetzt werden, so dass sie gleichmäßig bearbeitet wird. Nach der Bearbeitung wird die Station 1 wieder in die Ausgangslage zurückgebracht und der Stopper 11 gibt die Silizium-Scheibe 5 frei, so dass sie über ein Zwischenelement 15 in die nächste Station 2 rollen kann.FIG. 1 shows two stations 1 and 2 of a processing device 3 and a magazine 4 in which silicon wafers are stored. The silicon wafers 5 are introduced from this magazine 4, for example by tilting the magazine 4 in the direction of the arrow 6 or by a handling system, into the first station 1 in a vertical orientation. In station 1, the substrates, hereinafter referred to as silicon wafers 5, are held at their edges against tipping over by guide elements 7 and 8. Since the guide elements 7 and 8 are arranged inclined and the guide element 8 forms a raceway 9, the silicon wafer 5 rolls by gravity in the transport direction, ie in the direction of the arrow 10. In the station 1, the silicon wafer 5 is stopped by a stop 11 held so that it is held in this position and can be edited. There can Silicon wafer 5 can be set in rotation, for example by means of a rotary drive element 14, so that it is machined uniformly. After processing, the station 1 is returned to the starting position and the stopper 11 releases the silicon wafer 5, so that it can roll into the next station 2 via an intermediate element 15.
Die Figur 2 zeigt ein Ausführungsbeispiel einer Station, z.B. der Station 2, über welche die Scheibe 5 nach einem Auseinanderfahren der Führungselemente 7 und 8 in Richtung der Pfeile 12 und 13 , freigegeben wird und durch Transport in Richtung des Pfeils 16 in eine separate Behandlungszone 17 transportiert wird. In der separaten Behandlungszone 17 werden z.B. Fluide auf die Oberfläche 18 des Substrats aufgebracht. Dabei wird das Substrat von hinten z.B. mit einem Substrathalter 19 gehalten und in Drehung versetzt. Überschüssige Fluide werden von der Oberfläche 18 abgeschleudert . Bei thermischen Prozessen kann der Substrathalter 19 auch beheizt sein. Nach der Behandlung wird durch Verfahren des Substrathalters 19 die Scheibe 5 wieder in die Führungselemente 7, 8 zurückgeführt, so dass die Scheibe 5 über die Laufbahn der nächsten Station zugeführt werden kann.Figure 2 shows an embodiment of a station, e.g. the station 2, via which the disk 5 is released after the guide elements 7 and 8 have moved apart in the direction of the arrows 12 and 13 and is transported by transport in the direction of the arrow 16 into a separate treatment zone 17. In the separate treatment zone 17 e.g. Fluids applied to the surface 18 of the substrate. The substrate is e.g. held with a substrate holder 19 and rotated. Excess fluids are thrown off the surface 18. In thermal processes, the substrate holder 19 can also be heated. After the treatment, the disk 5 is returned to the guide elements 7, 8 by moving the substrate holder 19, so that the disk 5 can be fed to the next station over the track.
In der Figur 3 sind zwei hintereinander angeordnete Reinigungsstationen 20 und 21 dargstellt, denen eine Spülstation 22 nachgeschaltet ist. Die ReinigungsstationenFIG. 3 shows two cleaning stations 20 and 21 arranged one behind the other, which are followed by a rinsing station 22. The cleaning stations
20 und 21 und die Spülstation 22 sind geneigt angeordnet und weisen eine schiefe Ebene auf, auf welcher Silizium- Scheiben 5 aufgrund der Schwerkraft abrollen können. Dabei durchlaufen die Silizium-Scheiben 5 die einzelnen Reinigungsstationen 20 und 21 und die Spülstation 22 ohne zusätzliche Antriebsmittel. Jede Reinigungsstation 20 bzw.20 and 21 and the rinsing station 22 are inclined and have an inclined plane on which silicon wafers 5 can roll due to gravity. The silicon wafers 5 pass through the individual cleaning stations 20 and 21 and the rinsing station 22 without additional drive means. Each cleaning station 20 or
21 ist mit einem Ablauf 23 bzw. 24 versehen, über welchen das Reinigungsfluid, welches z.B. deionisiertes Wasser mit oder ohne chemischen Zusätzen, o . dgl . ist, ablaufen kann. Die Reinigungsstationen 20 und 21 sind, wie aus Figur 3 ersichtlich, hintereinander angeordnet, so dass das über den Ablauf 24 abströmende Reinigungsfluid in der Reinigungsstation 20, d.h. bei der vorgeschalteten Reinigungsstation wieder verwendet werden kann. Auf diese Weise wird Reinigungsfluid eingespart.21 is provided with a drain 23 or 24, via which the cleaning fluid, which, for example, deionized water with or without chemical additives, o. the like is, can expire. As can be seen from FIG. 3, the cleaning stations 20 and 21 are arranged one behind the other, so that the cleaning fluid flowing out via the outlet 24 can be reused in the cleaning station 20, ie in the upstream cleaning station. In this way, cleaning fluid is saved.
In Transportrichtung (Pfeil 24) befindet sich vor der Reinigungsstation 20 ein Magazin 4 mit einer Zuführstation 26, über welche die Silizium-Scheiben 5 in Richtung des Pfeils 6 der Reinigungsstation 20 zugeführt werden. Der Spülstation 22 ist ein weiteres Magazin 27 nachgeschaltet, welches eine Auffangstation 28 besitzt. Die Auffangstation 28 kann auch als Trockenstation ausgebildet sein.In the transport direction (arrow 24) there is a magazine 4 in front of the cleaning station 20 with a feed station 26, via which the silicon wafers 5 are fed in the direction of the arrow 6 to the cleaning station 20. The rinsing station 22 is followed by a further magazine 27 which has a collecting station 28. The collecting station 28 can also be designed as a drying station.
In der Figur 4 ist eine Variante gezeigt, in der die Siliziumscheibe 5 aus dem Magazin 4, insbesondere aus der Zuführstation 26 in die Reinigungsstation 20 transportiert wird. Hierfür ist die Zuführstation 26 mit einem Transportstempel 29 versehen, welcher vertikal bewegbar ist. Dieser Transportstempel 29 weist an seinem oberen Ende 30 eine geeignete Aufnahme bzw. Haltevorrichtung für die Siliziumscheibe 5 auf. Mit dem Transportstempel 29 wird eine Siliziumscheibe aus dem Magazin 4 entnommen und vertikal nach oben bewegt. Dabei stößt die Siliziumscheibe 5 mit ihrem oberen Umfangsrand an einer Schrägfläche 31 an, und wird durch eine weitere Aufwärtsbewegung des Transportstempels 29 in Richtung des Pfeils 32 von diesem weggeschoben. Dabei tritt die Siliziumscheibe 5 in die Reinigungsstation 20 ein und rollt auf der geneigten Laufbahn 9 bis sie von Stoppern 11 angehalten wird. In dieser Position wird die Siliziumscheibe 5 beidseitig gereinigt. In der Reinigungsstation 21 sind noch Drehantriebselemente 14 gezeigt, die die Siliziumscheibe 5 in eine Drehbewegung in Richtung des Pfeils 33 versetzt, die auch in der Station 20 möglich ist.FIG. 4 shows a variant in which the silicon wafer 5 is transported from the magazine 4, in particular from the feed station 26, into the cleaning station 20. For this purpose, the feed station 26 is provided with a transport stamp 29 which can be moved vertically. This transport stamp 29 has a suitable holder or holding device for the silicon wafer 5 at its upper end 30. With the transport stamp 29, a silicon wafer is removed from the magazine 4 and moved vertically upwards. The upper edge of the silicon wafer 5 abuts an inclined surface 31 and is pushed away from the latter by a further upward movement of the transport stamp 29 in the direction of the arrow 32. The silicon wafer 5 enters the cleaning station 20 and rolls on the inclined track 9 until it is stopped by stoppers 11. In this position, the silicon wafer 5 is on both sides cleaned. In the cleaning station 21, rotary drive elements 14 are also shown, which set the silicon wafer 5 in a rotational movement in the direction of the arrow 33, which is also possible in the station 20.
In der Figur 5 ist eine andere Variante für die Beschickung der Reinigungsstation 20 gezeigt. Dort wird das Magazin 4 derart verschwenkt, dass die Siliziumscheibe 5 durch Schwerkraft aus dem Magazin 4 und der Zuführstation 26 in die Reinigungsstation 20 eintreten kann. Dafür, dass lediglich die gewünschte Siliziumscheibe 5 die Zuführstation 26 verlässt sorgt eine Blende 34, welche nur die gewünschte Siliziumscheibe 5 durchlässt und die restlichen Scheiben in der Zuführstation 26 zurückhält.Another variant for loading the cleaning station 20 is shown in FIG. The magazine 4 is pivoted there in such a way that the silicon wafer 5 can enter the cleaning station 20 by gravity from the magazine 4 and the feed station 26. An aperture 34 ensures that only the desired silicon wafer 5 leaves the feed station 26, which only allows the desired silicon wafer 5 to pass through and retains the remaining wafers in the feed station 26.
Entsprechend ist im Anschluss an die Spülstation 22 ein verschwenkbares Magazin 27 mit Auffangstation 28 vorgesehen, in welche die Siliziumscheibe 5 durch eine Blende 35 eintritt (Figur 6) .Correspondingly, following the rinsing station 22, a pivotable magazine 27 with a collecting station 28 is provided, into which the silicon wafer 5 enters through an aperture 35 (FIG. 6).
Alternativ kann, wie in Figur 7 dargestellt, die aus der Spülstation 22 austretende Scheibe 5 auch von einem Greifer 36 ergriffen und in die Auffangstation 28 des Magazins 27 abgeklipt werden.Alternatively, as shown in FIG. 7, the disk 5 emerging from the rinsing station 22 can also be gripped by a gripper 36 and clipped into the collecting station 28 of the magazine 27.
In Figur 6 sind in der Spülstation 22 Pfeile 37 erkennbar, mit denen die AufStrömrichtung von Spülflüssigkeit auf die Scheibe 5 angedeutet ist . Auf diese Weise kann die Scheibe 5 ebenfalls in Drehbewegung versetzt werden, so dass sie in Richtung des Pfeils 33 umläuft.In FIG. 6, arrows 37 can be seen in the rinsing station, with which the direction of flow of rinsing liquid onto the disk 5 is indicated. In this way, the disc 5 can also be rotated so that it rotates in the direction of arrow 33.
Figur 8 zeigt eine Transporteinrichtung für den Substrattransport, wobei die Silizium-Scheibe 5 mittels Transportrollen 40, die "beabstandet" auf einem Transportband 41 angebracht sind, bewegt wird. Die Transportrollen 40 sind so angeordnet, daß eine Silizium- Scheibe 5 stets zwischen zwei Transportrollen 40 zu liegen kommt und der Abstand zum nächsten Transportrollenpaar 40 unbesetzt bleibt. Hierdurch wird eine minimale Auflagefläche der Substrate 5 erzielt. Die seitliche Führung der Scheiben 5 erfolgt mittels Führungselementen 7, die hier als Führungsleisten gestaltet sind. Zur Bearbeitung wird das Substrat 5 von unten durch als Aushebemechanismus dienende Rollen 42, die federnd gelagert sind, vom Transportband 41 abgehoben, so daß die Silizium- Scheibe 5 sich außerhalb des Kontaktbereiches mit den Transportrollen 40 befindet. Als Drehantriebselemente 14 sind gegenüberliegend von den Rollen 42 Antriebsrollen 14 vorgesehen, die die Silizium-Scheiben 5 in Rotation versetzten. Diese Antriebsrollen 14 werden gegen die Silizium-Scheibe 5 gedrückt, wobei die Andruckkraft durch die Federkraft, die ihr entgegenwirkt, geregelt wird. Zum Be- und Entladen des Transportbandes 41 kann die Führungsleiste nach oben weggefahren werden, so daß ein seitliches Herausnehmen der Silizium-Scheiben aus dem Transportband 41 möglich ist.Figure 8 shows a transport device for the substrate transport, the silicon wafer 5 by means of transport rollers 40, the "spaced" on a Conveyor belt 41 are attached, is moved. The transport rollers 40 are arranged such that a silicon wafer 5 always comes to rest between two transport rollers 40 and the distance to the next pair of transport rollers 40 remains unoccupied. In this way, a minimal contact surface of the substrates 5 is achieved. The lateral guidance of the disks 5 takes place by means of guide elements 7, which are designed here as guide strips. For processing, the substrate 5 is lifted from below from the conveyor belt 41 by rollers 42, which are resiliently mounted and serve as a lifting mechanism, so that the silicon wafer 5 is located outside the contact area with the transport rollers 40. Drive rollers 14, which set the silicon wafers 5 in rotation, are provided opposite the rollers 42 as rotary drive elements 14. These drive rollers 14 are pressed against the silicon wafer 5, the pressing force being regulated by the spring force which counteracts it. To load and unload the conveyor belt 41, the guide bar can be moved upwards, so that the silicon wafers can be removed from the conveyor belt 41 from the side.
Figur 9 zeigt eine alternative Ausgestaltung, wobei die Silizium-Scheiben 5 durch als Drehantriebselemente dienende Antriebsrollen 14, die in Richtung zueinander verfahren werden können, bis sie das Substrat 5 zwischen sich klemmen und aus dem Transportband 41 und dem Eingriff der Transportrollen 40 herausheben, in Rotation versetzt werden. Gegenüberliegend zu den Antriebsrollen 14 ist eine weitere, in Richtung auf das Substrat 5 verfahrbare Führungsrolle 43 angeordnet, die federnd gelagert ist. Durch diese Drei-Punkt-Lagerung wird die Silizium-Scheibe während der Behandlung gehalten. Figur 10 zeigt eine weitere Ausgestaltung der Erfindung, wobei die Transportrollen 40 als Drehantriebselemente 14 ausgebildet sind. Die Halterung der Scheibe 5 und deren Drehantrieb erfolgt mittels der dritten Rolle 43, die in Richtung auf die Scheibe 5 verfahrbar ist und die Silizium- Scheibe 5 federnd klemmt.FIG. 9 shows an alternative embodiment, the silicon wafers 5 being driven by drive rollers 14 serving as rotary drive elements, which can be moved in the direction of one another until they clamp the substrate 5 between them and lift them out of the conveyor belt 41 and the engagement of the transport rollers 40 Rotation. Opposite the drive rollers 14 there is a further guide roller 43 which can be moved in the direction of the substrate 5 and which is spring-mounted. With this three-point bearing, the silicon wafer is held during the treatment. FIG. 10 shows a further embodiment of the invention, the transport rollers 40 being designed as rotary drive elements 14. The disk 5 is held and its rotary drive is carried out by means of the third roller 43, which can be moved in the direction of the disk 5 and clamps the silicon wafer 5 in a resilient manner.
Außerdem besteht die Möglichkeit, daß die Scheibe nur mit ihrer Schwerkraft auf den Drehantriebselementen 14 aufliegt und seitlich berührungslos z.B. mittels Fluidstahlen gehalten wird.There is also the possibility that the disc rests only with its gravity on the rotary drive elements 14 and laterally without contact e.g. is held by means of fluid jets.
In Figur 11 ist schließlich die berührungslose Führung der Silizium-Scheiben 5 mittels Sprühdüsen 44 gezeigt.Finally, FIG. 11 shows the contactless guidance of the silicon wafers 5 by means of spray nozzles 44.
Zur Reinigung von Substraten 5 kann vorgesehen sein, daß Bürsten 50, 51 eingesetzt werden, die auf die rotierende Silizium-Scheibe 5 wirken (Figur 12) . Bei den Bürsten 50, 51 handelt es sich um Nylon- oder Schwammbürsten (sponge- brush-roller) . Die Bürsten 50, 51 werden zur Reinigung rotierend und mit einem gewissen Anpreßdruck gegen die Silizium-Scheibe 5 gedrückt, wodurch die Rotation der Scheibe 5 abgebremst wird. Um dies zu verhindern und die Silizium-Scheibe 5 in ihrer Rotationsbewegung zu unterstützen, erstreckt sich bzw. rotiert nur eine der Bürsten 50 über den gesamten Substratdurchmesser. Die andere Bürste 51 erstreckt sich bzw. rotiert dagegen nur über einen Teil des Substratdurchmessers, wobei jedoch um eine Reinigung des Substratzentrums sicherzustellen, auch diese Bürste 51 über den Substratmittelpunkt hinweg reicht. Darüber hinaus ist der Drehsinn der Bürsten 50, 51 so gewählt, daß die Rotation der Scheibe 5 unterstützt wird. Schließlich zeigt Figur 13 eine Trocknungsstation zur Spin- Trocknung, bei der das Substrat 5 mittels eines Greifers 19 an seinem Randbereich innerhalb der geschlossenen Schleuderkammer 53 gehalten wird, wobei der Greifer 19 über eine Welle 54 antreibbar ist . Die Schleuderkammer 53 besteht aus zwei Hälften 55 und 56 die zum Be- und Entladen auseinander gefahren werden. Das Substrat 5 wird zum Trocknen in Rotation versetzt. Die Zentrifugalkräfte, die auf die Substratmitte wirken, werden durch die Schwerkraft unterstützt, die ebenfalls auf die Wassertropfen, die sich auf dem Substrat 5 befinden, wirkt. Um die Oberflächenspannung des Wassers zu reduzieren, ist in die Schleuderkammer 53 ein Alkohol-Gas-Gemisch eingeleitet worden, so daß hierin eine Alkoholatmosphäre herrscht. Durch die Rotation wird das Wasser von der Oberfläche des Substrates 5 weggeschleudert und mittels einer Absaugeinrichtung über einen Ablauf 57 abgesaugt. Hierdurch wird auch der herrschende Überdruck abgebaut . Vor Beendigung der Rotation wird die Schleuderkammer 53 geöffnet, damit die Feuchtigkeit in der Schleuderkammer 53 reduziert wird und das Substrat 5 vollständig trocknet. Wahlweise kann bei der gezeigten Schleuderkammer 53 auch durch die Einlasse 58 vorgewärmtes, trockenes Gas eingeleitet werden, das zur Aufnahme der Restfeuchtigkeit dient . To clean substrates 5 it can be provided that brushes 50, 51 are used which act on the rotating silicon wafer 5 (FIG. 12). The brushes 50, 51 are nylon or sponge brushes (sponge brush roller). The brushes 50, 51 are pressed for cleaning in a rotating manner and with a certain contact pressure against the silicon wafer 5, as a result of which the rotation of the wafer 5 is braked. In order to prevent this and to support the silicon wafer 5 in its rotational movement, only one of the brushes 50 extends or rotates over the entire substrate diameter. The other brush 51, on the other hand, extends or rotates only over part of the substrate diameter, but in order to ensure cleaning of the substrate center, this brush 51 also extends beyond the center of the substrate. In addition, the direction of rotation of the brushes 50, 51 is selected so that the rotation of the disc 5 is supported. Finally, FIG. 13 shows a drying station for spin drying, in which the substrate 5 is held at its edge area within the closed centrifugal chamber 53 by means of a gripper 19, the gripper 19 being drivable via a shaft 54. The centrifugal chamber 53 consists of two halves 55 and 56 which are moved apart for loading and unloading. The substrate 5 is rotated for drying. The centrifugal forces that act on the center of the substrate are supported by gravity, which also acts on the water drops that are on the substrate 5. In order to reduce the surface tension of the water, an alcohol-gas mixture has been introduced into the centrifugal chamber 53, so that there is an alcohol atmosphere therein. As a result of the rotation, the water is thrown off the surface of the substrate 5 and sucked off by means of a suction device via an outlet 57. This also reduces the prevailing overpressure. Before the rotation ends, the centrifugal chamber 53 is opened so that the moisture in the centrifugal chamber 53 is reduced and the substrate 5 dries completely. In the centrifugal chamber 53 shown, dry gas which has been preheated and which is used to absorb the residual moisture can also be introduced through the inlets 58.

Claims

Patentansprüche claims
1. Verfahren zum Behandeln von flächigen Substraten, insbesondere Silizium-Scheiben zur Herstellung mikroelektronischer Bauelemente, dadurch gekennzeichnet, dass die flächigen Substrate, insbesondere die Silizium-Scheiben derart ausgerichtet werden, daß die Scheibenebene im Wesentlichen vertikal verläuft und daß die Scheiben in dieser Ausrichtung wenigstens eine Behandlungsstation durchlaufen.1. A method for treating flat substrates, in particular silicon wafers for the production of microelectronic components, characterized in that the flat substrates, in particular the silicon wafers, are aligned in such a way that the disk plane runs essentially vertically and that the disks at least in this alignment go through a treatment center.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Silizium-Scheiben über Handlingroboter transportiert werden.2. The method according to claim 1, characterized in that the silicon wafers are transported via handling robots.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Scheiben die Behandlungsstation, welche geneigt angeordnet ist, unter Schwerkraft durchlaufen, insbesondere durchrollen.3. The method according to claim 1 or 2, characterized in that the discs pass through the treatment station, which is arranged inclined, under gravity, in particular roll.
4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Scheiben mittels Transportrollen oder Transportelementen transportiert werden, die auf ein Transportband montiert sind, wobei eine Scheibe jeweils zwischen zwei Transportrollen bzw. -elementen zu liegen kommt.4. The method according to any one of the preceding claims, characterized in that the disks are transported by means of transport rollers or transport elements which are mounted on a conveyor belt, wherein a disc comes to lie between two transport rollers or elements.
5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Scheiben mehrere Behandlungsstationen durchlaufen . 5. The method according to any one of the preceding claims, characterized in that the discs go through several treatment stations.
6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Scheiben während der Behandlung angehalten und/oder gedreht werden.6. The method according to any one of the preceding claims, characterized in that the discs are stopped and / or rotated during the treatment.
7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Scheiben auf ihren Rändern die Behandlungsstationen durchlaufen oder in einen kreisringförmigen Adapter aufgenommen sind.7. The method according to any one of the preceding claims, characterized in that the discs pass through the treatment stations on their edges or are accommodated in an annular adapter.
8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Silizium-Scheiben getrocknet, mit Emulsionen für photolithographische Prozesse behandelt oder gereinigt werden, wobei beim Reinigen der Silizium-Scheiben fluide Medien auf wenigstens eine, insbesondere beide Oberflächen der Silizium-Scheiben geleitet werden.8. The method according to any one of the preceding claims, characterized in that the silicon wafers are dried, treated with emulsions for photolithographic processes or cleaned, wherein when cleaning the silicon wafers, fluid media is passed onto at least one, in particular both surfaces of the silicon wafers become.
9. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Scheiben unter Schwerkraft auf einem Drehantrieb (14) aufsitzen und gegebenenfalls noch über eine Klemmvorrichtung gehalten werden.9. The method according to any one of the preceding claims, characterized in that the disks are seated under gravity on a rotary drive (14) and are optionally also held by a clamping device.
10. Verfahren nach Anspruch 8, dadurch gekennzeichnet, dass das Trockenverfahren ein vertikal Spin- Trocknungsprozeß ist und in die Behandlungsstation ein Gas-Alkohol-Gemisch zur Erzeugung einer Alkoholatmosphäre eingeleitet wird.10. The method according to claim 8, characterized in that the drying process is a vertical spin drying process and a gas-alcohol mixture is introduced into the treatment station to produce an alcohol atmosphere.
11. Vorrichtung zur Durchführung des Verfahrens nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Behandlungsstation (1,2,20,21) einen vertikalen Einlass für die Scheiben, eine Transportstrecke für die Scheiben in vertikaler Ausrichtung und einen vertikalen Auslass aufweist.11. Device for performing the method according to one of the preceding claims, characterized in that the treatment station (1, 2, 20, 21) has a vertical inlet for the disks, a Transport route for the discs in a vertical orientation and a vertical outlet.
12. Vorrichtung nach Anspruch 11, dadurch gekennzeichnet, dass die Transportstrecke Führungselemente (7) zur Führung der Scheiben (5) in vertikaler Ausrichtung aufweis .12. The apparatus according to claim 11, characterized in that the transport path has guide elements (7) for guiding the disks (5) in a vertical orientation.
13. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass als Führungselemente (7, 8) auf beiden Seiten der Silizium-Scheiben (5) Flussigkeits- bzw. Gassprühdüsen (44) vorgesehen sind, die die Scheiben (5) berührungslos führen.13. Device according to one of the preceding claims, characterized in that liquid or gas spray nozzles (44) are provided as guide elements (7, 8) on both sides of the silicon wafers (5), which guide the wafers (5) without contact.
14. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass als Führungselemente (7, 8) auf beiden Seiten der Silizium-Scheibe (5) mit Flüssigkeit benetzte Führungsrollen oder -leisten angeordnet sind und das Substrat (5) nur in Kontakt mit dem Wasserfilm steht.14. Device according to one of the preceding claims, characterized in that as guide elements (7, 8) on both sides of the silicon wafer (5) with liquid-wetted guide rollers or strips are arranged and the substrate (5) only in contact with the Water film stands.
15. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass sie eine schiefe Ebene als Führungsbahn (9) für die Silizium-Scheiben (5) aufweist .15. Device according to one of the preceding claims, characterized in that it has an inclined plane as a guide track (9) for the silicon wafers (5).
16. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass mehrere Behandlungsstationen (1,2,20,21) hintereinander angeordnet sind und Behandlungsfluide kaskadenartig von nachgeschalteten Behandlungsstationen (2,21) zu vorgeschalteten Behandlungsstationen (1,20) transportiert werden. 16. Device according to one of the preceding claims, characterized in that a plurality of treatment stations (1, 2, 20, 21) are arranged one behind the other and treatment fluids are transported in a cascade fashion from downstream treatment stations (2, 21) to upstream treatment stations (1, 20).
17. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Scheiben (5) aus den Führungsbahnen (9) entnehmbar und einer separaten Bearbeitungszone bzw. -Station (17) zuführbar sind.17. Device according to one of the preceding claims, characterized in that the disks (5) can be removed from the guideways (9) and fed to a separate processing zone or station (17).
18. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass Stationen zum Auftragen eines Haftvermittlers, zur Beladung mit Photolacken, Schichtlacken, Ausgleichslackschichten, zum Trocknen, zur Entwicklung, zur Spülung, für die Nassprozesse wie Ätzen usw. , zum Belichten vorgesehen sind.18. Device according to one of the preceding claims, characterized in that stations are provided for applying an adhesion promoter, for loading with photoresists, layered lacquers, compensating lacquer layers, for drying, for development, for rinsing, for the wet processes such as etching, etc., for exposure.
19. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine Station zum Reinigen mittels beidseitig der Scheibe (5) angeordneten, rotierenden Bürsten (50, 51) vorgesehen ist, wobei die Silizium-Scheibe (5) rotiert und sich eine der Bürsten19. Device according to one of the preceding claims, characterized in that a station for cleaning by means of rotating brushes (50, 51) arranged on both sides of the disc (5) is provided, the silicon disc (5) rotating and one of the brushes
(50) über den ganzen Substratdurchmesser erstreckt und die andere (51) nur über einen Teil des Substratdurchmessers .(50) extends over the entire substrate diameter and the other (51) only over part of the substrate diameter.
20. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine Stationen zum Reinigen mittels beidseitig der Scheibe (5) angeordneten, rotierenden Bürsten (50, 51) vorgesehen ist, wobei die Silizium-Scheibe (5) rotiert und sich beide Bürsten (50, 51) nur über einen Teil des Substratdurchmessers erstrecken.20. Device according to one of the preceding claims, characterized in that a station for cleaning by means of rotating brushes (50, 51) arranged on both sides of the disc (5) is provided, the silicon disc (5) rotating and both brushes ( 50, 51) only extend over part of the substrate diameter.
21. Vorrichtung nach einem der Ansprüche 19 oder 20, dadurch gekennzeichnet, dass sich beide Bürsten (50, 51) über das SubstratZentrum hinweg erstrecken. 21. Device according to one of claims 19 or 20, characterized in that both brushes (50, 51) extend beyond the substrate center.
22. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Führungselemente (7, 8) die Scheiben (5) lediglich an den seitlichen Randbereichen berühren.22. Device according to one of the preceding claims, characterized in that the guide elements (7, 8) only touch the disks (5) at the lateral edge regions.
23. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Behandlungsstation23. Device according to one of the preceding claims, characterized in that the treatment station
(1, 2, 20, 21) mit wenigstens einem Stopper (11) und/oder mit Drehantriebselementen für die Scheiben (5) versehen ist.(1, 2, 20, 21) is provided with at least one stopper (11) and / or with rotary drive elements for the disks (5).
24. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine Zuführstation (26) und eine Auffangstation (28) vorgesehen sind.24. Device according to one of the preceding claims, characterized in that a feed station (26) and a collecting station (28) are provided.
25. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Zuführstation (26) bzw. die Auffangstation (28) Magazine (4, 27) enthalten oder als Magazine (4, 27) ausgebildet sind, in denen die Scheiben (5) in vertikaler Anordnung enthalten sind.25. Device according to one of the preceding claims, characterized in that the feed station (26) or the collecting station (28) contain magazines (4, 27) or are designed as magazines (4, 27) in which the disks (5) are included in a vertical arrangement.
26. Vorrichtung nach Anspruch 24 oder 25, dadurch gekennzeichnet, dass die Zuführstation (26) bzw. die Auffangstation (28) einen die Scheiben (5) in die bzw. aus der Behandlungsstation (1, 2, 20, 21) überführenden TransportStempel (29) aufweist und/oder kippbar gelagert sind.26. The device according to claim 24 or 25, characterized in that the feed station (26) or the collecting station (28) carries a transport stamp (5) into or out of the treatment station (1, 2, 20, 21) 29) and / or are tiltably mounted.
27. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Scheibe (5) über ihre Schwerkraft auf einem Drehantrieb (14) aufliegt. 27. Device according to one of the preceding claims, characterized in that the disc (5) rests on a rotary drive (14) via its gravity.
EP98939590A 1997-07-17 1998-07-01 Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components Withdrawn EP0996968A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1997130581 DE19730581A1 (en) 1997-07-17 1997-07-17 Cleaning silicon wafers with fluid media
DE19730582 1997-07-17
DE19730581 1997-07-17
DE1997130582 DE19730582A1 (en) 1997-07-17 1997-07-17 Photolithographic processing of microelectronic components
PCT/EP1998/004049 WO1999004416A1 (en) 1997-07-17 1998-07-01 Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components

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EP (1) EP0996968A1 (en)
JP (1) JP2001510940A (en)
WO (1) WO1999004416A1 (en)

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