EP1101245A2 - Method and device for cleaning substrates - Google Patents

Method and device for cleaning substrates

Info

Publication number
EP1101245A2
EP1101245A2 EP99934565A EP99934565A EP1101245A2 EP 1101245 A2 EP1101245 A2 EP 1101245A2 EP 99934565 A EP99934565 A EP 99934565A EP 99934565 A EP99934565 A EP 99934565A EP 1101245 A2 EP1101245 A2 EP 1101245A2
Authority
EP
European Patent Office
Prior art keywords
substrates
cleaning
cleaning device
batch
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99934565A
Other languages
German (de)
French (fr)
Inventor
Uwe Müller
David Henson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag Microtech GmbH
Original Assignee
Steag Electronic Systems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Electronic Systems AG filed Critical Steag Electronic Systems AG
Publication of EP1101245A2 publication Critical patent/EP1101245A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes

Definitions

  • the present invention relates to a method and a device for cleaning substrates, in which or in which the substrates are each individually wet-cleaned in at least one coarse cleaning device.
  • semiconductor wafers are different process steps, such as. B exposed to coating, masking, etching, doping, polishing, etc. In between, it may be necessary to clean the substrates. In particular after a polishing step, it is necessary to clean the polished substrates, since abrasion particles of the substrates and polishing liquid usually adhere to them.
  • the substrates are transported from the polishing device to a brush cleaning system, as described, for example, in EP-A-0 412 796, JP-A-7 066 161, US-A-5 547 515 or JP-A-1 289 122 are known.
  • a brush cleaning system as described, for example, in EP-A-0 412 796, JP-A-7 066 161, US-A-5 547 515 or JP-A-1 289 122 are known.
  • the substrates are cleaned individually by means of rotating brushes and a cleaning liquid.
  • the substrates are then typically dried and collected as a batch, as described, for example, in US Pat. No. 5,547,515.
  • the dried and collected substrates are later used in a fine cleaning device, as described, for example, in DE-A-44 13 077, DE-A-195 46 990 or DE-A-196 37 875 of the same applicant are used.
  • this fine cleaning device the substrates in a batch are combined sam immersed in a treatment liquid and finally cleaned in it, for example, by generating a flow in a treatment tank. Subsequently, the substrates are moved out of the fine cleaning device and dried, the drying being carried out by slowly lifting the substrates out of the treatment liquid. The drying process is accelerated by a fluid introduced above the treatment liquid in accordance with the "Marangoni effect" described in EP-A-0 385 536.
  • drying of the respective substrates is necessary between the individual cleaning of the substrates in the brush cleaning systems and the batch-wise cleaning in the fine cleaning device.
  • B. by spinning or heat treatment of the wafers. This drying is necessary because the treatment liquid used in brush cleaning would otherwise adhere to the wafer and create streaks, which would result in a subsequent one
  • the dried wafers must then be temporarily stored and collected in order to be used as a batch in the fine cleaning device.
  • the drying step between brush cleaning and fine cleaning is complex and involves the risk of damage to the wafer by spinning or heat treatment.
  • the present invention is therefore based on the object of providing a simplified and improved method and an improved and simplified device for cleaning substrates, with which the treatment of the substrates is accelerated and thus the productivity is increased.
  • the object is achieved in a method of the type mentioned at the outset in that, after the pre-cleaning, the substrates are transported in the wet state into a collecting basin filled with treatment fluid, the substrates are collected in the collecting basin, and the substrates upon reaching a certain one Number in the collecting basin together as a batch in the wet state in a fine cleaning device, the substrates in the fine cleaning device are wet cleaned, and the batch is subsequently dried.
  • the substrate is preferably pre-cleaned with a rotating brush and a treatment liquid.
  • the substrate is rotated during the same for a uniform pre-cleaning.
  • the substrate is sonicated according to a preferred embodiment with ultrasonic waves or with megasonic.
  • the substrate is pre-cleaned in two different coarse cleaning devices and transported in the wet state from a first coarse cleaning device to a second coarse cleaning device. The use of two coarse cleaning devices increases the pre-cleaning effect.
  • the substrates are held in an essentially the same, vertical orientation during the method steps, whereby in particular a transport device for the substrates can be simplified since this does not have to rotate the substrates between the different cleaning steps.
  • the substrates are completely immersed in a cleaning and / or rinsing liquid and washed around with it.
  • the substrates are preferably sonicated with ultrasound waves to increase the cleaning effect.
  • the substrates are moved out of the cleaning and / or rinsing liquid for drying and are introduced into a dry transfer hood and locked therein.
  • a fluid is preferably introduced into the drying area via the dry transfer hood before and / or while the substrates are being moved out of the cleaning and / or rinsing liquid.
  • the introduced fluid is preferably a gas mixture of nitrogen and isopropyl alcohol which reduces the surface tension of the cleaning and / or rinsing liquid and thereby causes the cleaning and / or rinsing liquid to flow better when the substrates are moved out.
  • a device for wet cleaning of substrates which has at least one single-substrate coarse cleaning device with a liquid supply and a treatment container, in that at least one collecting tank that can be filled with treatment fluid for receiving several substrates, a batch fine cleaning device with a fluid container and at least one transport device for wet transport of the substrates between the single substrate coarse cleaning device and the collecting basin on the one hand and the collecting basin and the batch fine cleaning device on the other hand is provided.
  • substrates are temporarily stored in the collecting basin before they can be transported in batches to a fine cleaning device. Due to the intermediate storage in a treatment fluid, there is no danger that the liquid adhering to the substrates after the rough cleaning will dry and form streaks. This means that the previously required drying step between a single coarse cleaning and a batch fine cleaning with the risk of damaging the substrates can also be omitted. In addition, the treatment speed and thus the efficiency of the device is increased.
  • the single substrate coarse cleaning device has at least one rotatable brush.
  • the single substrate coarse cleaning device has at least one rotatable pressure roller in order to rotate the substrate during the coarse cleaning and thereby to obtain a uniform cleaning effect.
  • the single-substrate coarse cleaning device has at least one ultrasonic transmitter.
  • the single-substrate coarse cleaning device has two treatment tanks, each with at least one liquid supply and at least one brush. In this way, a two-stage and better pre-cleaning of the substrates can be achieved.
  • the single substrate coarse cleaning device, the collecting basin, the batch fine cleaning device and the transport device each have holding means in order to hold the substrates in an essentially identical, preferably vertical, orientation. This in particular simplifies the transport device since it does not have to rotate the substrate into another orientation during transport.
  • the substrates are advantageously held essentially vertically in order to achieve compatibility with known batch fine cleaning devices.
  • the batch fine cleaning device preferably has at least one inlet for cleaning and / or rinsing liquid, as well as at least one ultrasonic transmitter, in order to achieve a good final cleaning effect.
  • the batch fine cleaning device In order to facilitate the introduction and removal of the substrates in or from the batch fine cleaning device, it has a lifting and lowering device for the substrates.
  • the transport device has a dry transport hood with holding means for the substrates.
  • the holding means in the dry transport hood enable the substrates to be used alone, ie without a speaking substrate carrier can be picked up and transported, which reduces the risk of contamination of the substrates by a substrate carrier.
  • the dry transport hood has means for introducing a fluid into a drying area located above a surface of said liquid.
  • the transport device preferably has a wet transport hood for transporting a batch of substrates from a collecting basin to the batch fine cleaning device.
  • a wet transport hood next to the dry transport hood ensures that the dry transport hood is always dry and thus does not contaminate the substrates that have been taken up.
  • the single-substrate coarse cleaning devices, the receiving and collecting basin and the batch fine cleaning device are arranged in a row. This also simplifies the transport device since it only has to perform linear movements.
  • the device has an input area with a receptacle and an input basin which can be filled with liquid.
  • the input area with a receptacle has the advantage that an external dealer can deliver substrates to the device without precise coordination with the individual substrate coarse cleaning devices.
  • the inlet basin, which can be filled with liquid, may prevent liquids adhering to the substrates from drying out before rough cleaning.
  • the single substrate coarse cleaning device, the collecting tank, the batch fine cleaning device, the input area and the entrance basin are arranged in a row.
  • FIG. 1 is a perspective view of a cleaning device for substrates according to the present invention
  • FIG. 2 shows a top view of the cleaning device according to FIG. 1; 3 a and b a longitudinal sectional view through a first module of the cleaning device according to. Fig. 1 and a cross-sectional view through a
  • Fig. 4 is a schematic sectional view of a fine cleaning device.
  • Figures 1 and 2 show the cleaning device 1 according to the invention, which is essentially composed of two modules 2 and 3 and a transport device 4 serving the two modules.
  • the first module 2 forms an input and pre-cleaning station, while the second module 3 forms a collection, fine cleaning and output station.
  • the module 2 has a wafer input area 5 with a receiving and holding element 7 for a wafer 8.
  • the receiving and holding element 7 is arranged in such a way that the wafer 8 is held in a vertical position.
  • the wafer 8 is removed from a polishing station via an external dealer (not shown), possibly rotated into the vertical position, and inserted into the holding and holding device 7.
  • a receiving basin 9 Adjacent to the receiving area 5 is a receiving basin 9, which is filled with a fluid such as DI water, and a plurality of wafers such as e.g. B. can accommodate 5 wafers.
  • a fluid such as DI water
  • a plurality of wafers such as e.g. B. can accommodate 5 wafers.
  • the module 2 also has first and second brush cleaning devices 10 and 11, which are arranged adjacent to the side of the receiving area 5 opposite the receiving basin 9.
  • the first brush cleaning device 10 has a cover 14 and a treatment basin 15 with an overflow, which is filled with a treatment liquid 16 from below.
  • a wafer receiving element 17 is arranged in the form of a 3-point support such that it holds a wafer 8 inserted into the basin 15 so that it is half-immersed in the treatment liquid 16 and held vertically.
  • the brush cleaning device 10 also has two brush rollers 20, 21, which are each arranged on opposite sides of a wafer inserted into the basin 15, and two pressure rollers 22, 24, which bear against the edge of the wafer 8 during cleaning, in order to do this rotate.
  • the brush rollers 20, 21 extend in the longitudinal direction of the basin 15 and are arranged above the basin 15 such that they extend at least partially into the treatment liquid 16 in the basin 15.
  • the brush rollers 20, 21 are rotatable for cleaning a wafer 8 inserted into the basin 15.
  • the brush rollers have a fluid channel in their interior, via which treatment fluid is guided from the inside to the outside of the brush rollers.
  • At least one ultrasonic transmitter is also provided in the first brush cleaning device 10 in order to sonicate the wafer with ultrasonic waves for better cleaning.
  • the second brush cleaning device 11 is constructed essentially the same as the first brush basin, but without an ultrasonic transmitter.
  • the input area 5, the storage and collection basin 8, and the brush basin 10 and 11 are arranged in a row in the module 2.
  • the module 3 connects laterally directly to the module 2, specifically adjacent to the second brush cleaning device 11. Adjacent to the brush cleaning device 11, the module 3 has a storage and collection basin 30 which is used to hold a larger number of semiconductor wafers 8, such as B. 25 semiconductor wafers is suitable.
  • the collecting basin 30 has a receiving device (not shown in detail) and a lifting and / or lowering device for the semiconductor wafers 8.
  • the collection basin 30 is filled with a treatment fluid, such as. B. di-water, filled so that the received in the collecting container 30 semiconductor wafer 8 are completely immersed in the fluid.
  • the pool 30 may be an overflow pool, although this is not shown.
  • a fine cleaning device 35 which can best be seen in FIG. 4, is provided adjacent to the collecting basin 30.
  • the fine cleaning device 35 has a treatment basin 36, which can optionally be used simultaneously and / or alternately with a treatment fluid, such as, for example, B. an etching liquid, a chemical cleaning liquid and / or a rinsing liquid. Furthermore, a lifting and lowering device 37 in the form of a knife for the semiconductor wafer 8 is provided in the basin.
  • a treatment fluid such as, for example, B. an etching liquid, a chemical cleaning liquid and / or a rinsing liquid.
  • a lifting and lowering device 37 in the form of a knife for the semiconductor wafer 8 is provided in the basin.
  • the fine cleaning device 35 also has at least one ultrasound transmitter (not shown) in order to sonicate the wafers located in the treatment basin 36 and the treatment fluid with ultrasound waves.
  • at least one ultrasound transmitter (not shown) in order to sonicate the wafers located in the treatment basin 36 and the treatment fluid with ultrasound waves.
  • inlet nozzles 38 for the treatment fluid and an outlet 39 in the form of a quick dump valve, via which the treatment fluid is drained off.
  • An output station 40 is provided adjacent to the fine cleaning device 35, on which the cleaned and dried wafers are placed and from which they are transported away.
  • the transport device 4 operating the two modules 2 and 3 has a first horizontally and vertically movable dealer 50 for transporting the wafers 8 from
  • the dealer 50 has, in a known manner, a gripping device 51 for the wafer 8, which is designed as a so-called edge gripper.
  • the gripping device is connected to the first vertical strut 55 of the transport device 4 by means of connecting elements 52 spaced apart and vertically movable.
  • the vertical strut 55 is in turn horizontally movable attached to horizontal struts 56, 57 of the transport device 4. The vertical movement of the gripping device thus takes place along the Strut 55, while the horizontal movement takes place by moving the strut 55 along the struts 56, 57.
  • the transport device 4 also has a second dealer 60, which is essentially the same as the first dealer 50, and which in turn can be moved vertically and horizontally along vertical and horizontal struts.
  • the dealer 60 serves to transport the individual wafers 8 from the first brush cleaning device 10 into the second brush cleaning device 11 and from the second brush cleaning device 11 into the storage and collection basin 30 of the second module 3.
  • the transport device 4 also has a wet transfer hood 65 for transporting a batch of wafers from the collecting basin 30 into the fine cleaning device 35.
  • a wet transfer hood 65 is known, for example, from DE-A-196 52 526 by the same applicant, which is made the subject of the present disclosure in order to avoid repetitions.
  • the transport device 4 also has a dry transfer hood 70, which is described for example in DE-A-196 52 526 by the same applicant. In order to avoid repetition, the content of the pre-registration is made the subject of the present application.
  • the dry transfer hood 70 which is shown schematically in FIG. 4, serves to receive the wafers lifted out of the treatment basin 36 and to transport them to the output station 40.
  • the dry transfer hood has lateral guides 71 for receiving and guiding the wafers 8 and a locking element 72 in order to hold the received wafers.
  • the cover 70 has a gas feed 75, via which a gas mixture, which consists, for example, of nitrogen and isopropyl alcohol (N 2 / IPA), can be introduced.
  • the collecting basin 30, the fine cleaning device 35 and the dispensing unit 40 are arranged in a row with the input area 5, the receiving and collecting basin 8, and the first and second brush cleaning devices 10 and 11.
  • a wafer 8 is picked up by an external wet robot, not shown, from a polisher output station, not shown, possibly rotated into a vertical position, and placed on the receiving and holding element 7 of the input area 5.
  • the dealer 50 then grips the wafer and first transports it into the liquid-filled receptacle 9, and deposits it therein.
  • the receiving basin 9 can accommodate up to five wafers, for example.
  • the dealer 50 then takes the wafer out of the receiving basin 9 again and drives it over the first brush cleaning device 10, the lid 14 of which opens.
  • the dealer 50 deposits the wafer on the support 17 in the treatment basin 15 and moves out of the brush cleaning device.
  • the pressure rollers 22, 24 and the brush rollers 20, 21 are brought into engagement with the wafer, and the treatment tank 15 is filled with a liquid 16, for example di-water, until it overflows, so that the wafer 8 is half-immersed.
  • the brush rollers 20, 21 are rotated and thereby press the wafer 8 slightly upwards against the pressure rollers 22, 24, as a result of which the wafer 8 is lifted off the receptacle 17 and is set into a rotary movement by the rotating pressure rollers 22, 24.
  • the wafer is roughly cleaned by the brush rollers 20, 21.
  • the ultrasound transmitter is activated, thereby increasing the cleaning effect.
  • the rotational speed of the brush rollers 20, 21 and the pressure rollers 22, 24 is slowed down towards the end of the cleaning, whereby the wafer 8 is lowered back into the receptacle 7.
  • the brush rollers 20, 21 and the pressure rollers 22, 24 are moved away from the wafer 8 and the lid 14 of the brush cleaning device 10 opens.
  • the second handler 60 moves over the first brush cleaning device 10, grips the wafer 8 and transports it into the second brush cleaning device 11, where it deposits the wafer 8 on a support.
  • the cleaning process from the first brush basin 10 is essentially repeated, this time using no ultrasound, and the water in the treatment basin is also not made to overflow.
  • the wafer After cleaning in the second brush cleaning device 11, the wafer is gripped by the second handler 60, transported over the collecting basin 30 and inserted into the receiving device located therein. The previous steps are repeated with new wafers in each case until all the places in the collecting basin 30 are occupied.
  • the wet transfer hood 65 When all the seats in the collecting basin 30 are occupied, the wet transfer hood 65 is moved over the collecting basin 30, and all wafers 8 are lifted together from the collecting basin 30 into the wet transfer hood 65 and locked. When the wafers 8 are locked in the wet transfer hood 65, they move over the fine cleaning device 35.
  • the lifting and lowering device 37 located in the treatment basin 36 is raised in order to receive the wafers 8 accommodated in the wet transfer hood 65 . Then the locking mechanism of the wet transfer hood 65 and the wafers 8 are released together via the lifting / lowering device 37 into the treatment basin 36, which is filled with a treatment fluid such as e.g. B. Di-water is filled, lowered. From the nozzles 38 in
  • Cleaning liquid is injected between the wafers 8 in the pelvic floor.
  • the di-water in the container will then become displaced above and runs over an overflow.
  • the ultrasound transmitter is activated for a specific treatment tent.
  • the cleaning liquid is drained down by means of a quick dump valve 39 and the container is again filled with di-water from below.
  • the dry transfer hood 70 is moved over the treatment basin 36, and a gas mixture, such as N 2 / IPA, is introduced as a layer over the surface of the DI water via the hood 70.
  • the wafers 8 are lifted from the di-water m together with the lifting / lowering device 37, the dry transfer hood 70.
  • the locking mechanism 72 of the hood is actuated to hold the wafers 8.
  • the dry transfer hood 70 then travels over the output station 40 and deposits the wafers 8 on the wafer holder of the output station 40 by opening the locking mechanism 72.
  • the wafers 8 are picked up from the output station with an external drying robot.
  • the present invention has been described using a specific exemplary embodiment. However, the invention is not restricted to this special exemplary embodiment.
  • the invention is not restricted to this special exemplary embodiment.
  • this requires a very precise timing, since the wafer should not remain in the receiving area for too long, since otherwise liquids present on the wafer could dry out.
  • the wafers are operated by an external robot are inserted directly into the receiving basin 9 and the dealer 50 only transports the wafers from the receiving and collecting basin 9 into the brush cleaning device 10.

Abstract

The invention relates to a method and a device for cleaning substrates (8), according to which the substrates (8) are individually wet-cleaned in at least one primary cleaning unit (10, 11), transferred in the wet state into a collecting tank (30) filled with a treatment fluid and collected in the collecting tank (30). When a certain number of substrates has been collected in the collecting tank (30) said substrates are transported jointly as a single batch in the wet state to a secondary cleaning unit (35). In the secondary cleaning unit (35) the batch of substrates (8) is subjected to final wet cleaning and then dried.

Description

Verfahren und Vorrichtung zum Reinigen von Substraten Method and device for cleaning substrates
Die vorliegende Erfindung bezieht sich auf ein Verfahren und eine Vorrichtung zum Reinigen von Substraten, bei dem bzw. in der die Substrate jeweils einzeln in wenigstens einer Grobreinigungseinrichtung naß vorgereinigt werden.The present invention relates to a method and a device for cleaning substrates, in which or in which the substrates are each individually wet-cleaned in at least one coarse cleaning device.
In der Halbleiterindustrie werden Halbleiter-Wafer unterschiedlichen Verfahrensschritten, wie z. B Beschich- tungs-, Maskierungs-, Ätz-, Dotierungs-, Polierschritten usw. ausgesetzt. Dazwischen kann es notwendig sein, die Substrate zu reinigen. Insbesondere nach einem Polier- schritt ist es erforderlich, die polierten Substrate zu reinigen, da an ihnen in der Regel Abrieb-Teilchen der Substrate, sowie Polierflüssigkeit anhaften.In the semiconductor industry, semiconductor wafers are different process steps, such as. B exposed to coating, masking, etching, doping, polishing, etc. In between, it may be necessary to clean the substrates. In particular after a polishing step, it is necessary to clean the polished substrates, since abrasion particles of the substrates and polishing liquid usually adhere to them.
Bei herkömmlichen Verfahren zum Reinigen von Substraten nach einem Poliervorgang werden die Substrate von der Poliervorrichtung zu einer Bürstenreinigungsanlage transportiert, wie sie beispielsweise aus der EP-A-0 412 796, der JP-A-7 066 161, der US-A-5 547 515 oder der JP-A-1 289 122 bekannt sind. Bei diesen bekannten Bürstenreini- gungsanlagen werden die Substrate einzeln mittels rotierender Bürsten und einer Reinigungsflüssigkeit gereinigt. Anschließend werden die Substrate in der Regel getrocknet und als Charge gesammelt, wie es beispielsweise in der US-A-5 547 515 beschrieben ist.In conventional methods for cleaning substrates after a polishing process, the substrates are transported from the polishing device to a brush cleaning system, as described, for example, in EP-A-0 412 796, JP-A-7 066 161, US-A-5 547 515 or JP-A-1 289 122 are known. In these known brush cleaning systems, the substrates are cleaned individually by means of rotating brushes and a cleaning liquid. The substrates are then typically dried and collected as a batch, as described, for example, in US Pat. No. 5,547,515.
Da die Bürstenreinigung in der Regel nicht ausreichend ist, werden die getrockneten und gesammelten Substrate später in eine Feinreinigungsvorrichtung, wie sie beispielsweise aus der DE-A-44 13 077, der DE-A-195 46 990 oder der DE-A-196 37 875 derselben Anmelderin bekannt sind, eingesetzt. In dieser Feinreinigungsvorrichtung werden die in einer Charge befindlichen Substrate gemein- sam in eine Behandlungsflüssigkeit eingetaucht und in ihr beispielsweise durch Erzeugen einer Strömung in einem Behandlungsbecken endgereinigt. Nachfolgend werden die Substrate aus der Feinreinigungsvorrichtung herausbewegt und getrocknet, wobei die Trocknung durch langsames Herausheben der Substrate aus der Behandlungsflüssigkeit erfolgt. Durch ein über der Behandlungsflüssigkeit eingeleitetes Fluid wird gemäß dem "Marangoni-Effekt", der in der EP-A-0 385 536 beschrieben ist, der Trocknungsvorgang beschleunigt.Since brush cleaning is generally not sufficient, the dried and collected substrates are later used in a fine cleaning device, as described, for example, in DE-A-44 13 077, DE-A-195 46 990 or DE-A-196 37 875 of the same applicant are used. In this fine cleaning device, the substrates in a batch are combined sam immersed in a treatment liquid and finally cleaned in it, for example, by generating a flow in a treatment tank. Subsequently, the substrates are moved out of the fine cleaning device and dried, the drying being carried out by slowly lifting the substrates out of the treatment liquid. The drying process is accelerated by a fluid introduced above the treatment liquid in accordance with the "Marangoni effect" described in EP-A-0 385 536.
Bei der oben beschriebenen Verfahrensabfolge ist zwischen der Einzelreinigung der Substrate in den Bürstenreinigungsanlagen und der chargenweisen Reinigung in der Fein- reinigungsvorrichtung eine Trocknung der jeweiligen Substrate notwendig, die z. B. durch Schleudern oder Wärmebehandlung der Wafer erfolgt. Diese Trocknung ist notwendig, da die bei der Bürstenreinigung verwendete Behandlungsflüssigkeit ansonsten an dem Wafer anhaften wür- de und Schlieren erzeugt, die bei einer nachfolgendenIn the process sequence described above, drying of the respective substrates is necessary between the individual cleaning of the substrates in the brush cleaning systems and the batch-wise cleaning in the fine cleaning device. B. by spinning or heat treatment of the wafers. This drying is necessary because the treatment liquid used in brush cleaning would otherwise adhere to the wafer and create streaks, which would result in a subsequent one
Reinigung schwer zu entfernen sind. Die getrockneten Wafer müssen dann zwischengelagert und gesammelt werden, um als eine Charge in die Feinreinigungsvorrichtung eingesetzt zu werden.Cleaning are difficult to remove. The dried wafers must then be temporarily stored and collected in order to be used as a batch in the fine cleaning device.
Der Trocknungsschritt zwischen der Bürstenreinigung und der Feinreinigung ist aufwendig und birgt die Gefahr einer Beschädigung des Wafers durch das Schleudern bzw. die Wärmebehandlung in sich.The drying step between brush cleaning and fine cleaning is complex and involves the risk of damage to the wafer by spinning or heat treatment.
Der vorliegenden Erfindung liegt daher die Aufgabe zugrunde, ein vereinfachtes und verbessertes Verfahren und eine verbesserte und vereinfachte Vorrichtung zum Reinigen von Substraten vorzusehen, mit dem bzw. mit der die Behandlung der Substrate beschleunigt und damit die Produktivität erhöht wird. Erfindungsgemäß wird die Aufgabe bei einem Verfahren der eingangs genannten Art dadurch gelöst, daß die Substrate nach der Vorreinigung im nassen Zustand in ein mit Be- handlungsfluid gefülltes Sammelbecken transportiert wer- den, die Substrate in dem Sammelbecken gesammelt werden, die Substrate beim Erreichen einer bestimmten Anzahl in dem Sammelbecken gemeinsam als eine Charge im nassen Zustand in eine Feinreinigungsvorrichtung transportiert, die Substrate in der Feinreinigungsvorrichtung naß endge- reinigt werden, und die Charge nachfolgend getrocknet wird.The present invention is therefore based on the object of providing a simplified and improved method and an improved and simplified device for cleaning substrates, with which the treatment of the substrates is accelerated and thus the productivity is increased. According to the invention, the object is achieved in a method of the type mentioned at the outset in that, after the pre-cleaning, the substrates are transported in the wet state into a collecting basin filled with treatment fluid, the substrates are collected in the collecting basin, and the substrates upon reaching a certain one Number in the collecting basin together as a batch in the wet state in a fine cleaning device, the substrates in the fine cleaning device are wet cleaned, and the batch is subsequently dried.
Indem die Substrate ohne Zwischentrocknung in ein mit Be- handlungsfluid gefülltes Sammelbecken transportiert wer- den, bevor die Substrate beim Erreichen einer bestimmten Anzahl als eine Charge wiederum im nassen Zustand in die Feinreinigungsvorrichtung transportiert werden, erübrigt sich eine Trocknung der Substrate nach der Grobreinigung, da durch die Aufbewahrung der Substrate in einer Flüssig- keit das Antrocknen der Flüssigkeit und die damit verbundene Schlierenbildung verhindert wird. Dadurch besteht auch keine Gefahr einer Beschädigung der Substrate bei einer Zwischentrocknung und ferner wird die Behandlungsgeschwindigkeit und damit die Effizienz der Vorrichtung erhöht.By transporting the substrates into a collecting basin filled with treatment fluid without intermediate drying, before the substrates are once again transported as a batch in the wet state in the wet state, a drying of the substrates after the rough cleaning is unnecessary, since by storing the substrates in a liquid, the drying of the liquid and the associated streaking is prevented. This also means that there is no risk of damage to the substrates during intermediate drying and furthermore the treatment speed and thus the efficiency of the device is increased.
Für eine einfache und effektive Vorreiningung wird das Substrat vorzugsweise mit einer sich drehenden Bürste und einer Behandlungsflüssigkeit vorgereinigt.For simple and effective pre-cleaning, the substrate is preferably pre-cleaned with a rotating brush and a treatment liquid.
Vorzugsweise wird das Substrat für eine gleichmäßige Vorreinigung während derselben gedreht.Preferably, the substrate is rotated during the same for a uniform pre-cleaning.
Um die Vorreinigungswirkung zu erhöhen, wird das Substrat gemäß einem bevorzugten Ausführungsbeispiel mit Ultraschallwellen bzw. mit Megasonic beschallt. Gemäß einer bevorzugten Ausführungsform der Erfindung wird das Substrat in zwei unterschiedlichen Grobreinigungseinrichtungen vorgereinigt und im nassen Zustand von einer ersten Grobreinigungseinrichtung zu einer zweiten Grobreinigungseinrichtung transportiert. Durch die Verwendung zweier Grobreinigungseinrichtungen wird die Vorreinigungswirkung erhöht.In order to increase the pre-cleaning effect, the substrate is sonicated according to a preferred embodiment with ultrasonic waves or with megasonic. According to a preferred embodiment of the invention, the substrate is pre-cleaned in two different coarse cleaning devices and transported in the wet state from a first coarse cleaning device to a second coarse cleaning device. The use of two coarse cleaning devices increases the pre-cleaning effect.
Gemäß einer besonders bevorzugten Ausführungsform der Er- findung werden die Substrate während der Verfahrensschritte in einer im wesentlichen gleichen, vertikalen Orientierung gehalten, wodurch insbesondere eine Transporteinrichtung für die Substrate vereinfacht werden kann, da diese die Substrate zwischen den verschiedenen Reinigungsschritten nicht drehen muß.According to a particularly preferred embodiment of the invention, the substrates are held in an essentially the same, vertical orientation during the method steps, whereby in particular a transport device for the substrates can be simplified since this does not have to rotate the substrates between the different cleaning steps.
Zum Erreichen einer guten Endreinigungswirkung werden die Substrate vollständig in eine Reinigungs- und/oder Spülflüssigkeit eingetaucht und mit dieser umspült. Vorzugs- weise werden die Substrate zum Erhöhen der Reinigungswirkung dabei mit Ultraschallwellen beschallt.To achieve a good final cleaning effect, the substrates are completely immersed in a cleaning and / or rinsing liquid and washed around with it. The substrates are preferably sonicated with ultrasound waves to increase the cleaning effect.
Gemäß einer bevorzugten Ausführungsform der Erfindung werden die Substrate zum Trocknen aus der Reinigungs- und/oder Spülflüssigkeit herausbewegt und in eine Trok- ken-Transfer-Haube eingeführt und in dieser verriegelt. Um den Trocknungsvorgang zu beschleunigen, wird vorzugsweise über die Trocken-Transfer-Haube vor und/oder während dem Herausbewegen der Substrate aus der Reinigungs- und/oder Spülflüssigkeit ein Fluid in den Trocknungsbereich eingeleitet. Dabei ist das eingeleitete Fluid vorzugsweise ein Gasgemisch aus Stickstoff und Isopropylal- kohol welche die Oberflächenspannung der Reinigungsund/oder Spülflüssigkeit verringert und dadurch ein bes- seres abfließen der Reinigungs- und/oder Spülflüssigkeit beim Herausbewegen der Substrate bewirkt. Die gestellte Aufgabe wird bei einer Vorrichtung zum Naßreinigen von Substraten, die wenigstens eine Einzelsubstrat-Grobreinigungseinrichtung mit einer Flüssigkeitszufuhr und einem Behandlungsbehälter aufweist, dadurch ge- löst, daß wenigstens ein mit Behandlungsfluid füllbares Sammelbecken zur Aufnahme mehrerer Substrate, eine Chargen-Feinreinigungseinrichtung mit einem Fluidbehälter und wenigstens eine Transportvorrichtung, zum Naß-Transport der Substrate zwischen der Einzelsubstrat-Grobreinigungs- einrichtung und dem Sammelbecken einerseits und dem Sammelbecken und der Chargen-Feinreinigungseinrichtung andererseits vorgesehen ist.According to a preferred embodiment of the invention, the substrates are moved out of the cleaning and / or rinsing liquid for drying and are introduced into a dry transfer hood and locked therein. In order to accelerate the drying process, a fluid is preferably introduced into the drying area via the dry transfer hood before and / or while the substrates are being moved out of the cleaning and / or rinsing liquid. The introduced fluid is preferably a gas mixture of nitrogen and isopropyl alcohol which reduces the surface tension of the cleaning and / or rinsing liquid and thereby causes the cleaning and / or rinsing liquid to flow better when the substrates are moved out. The object is achieved in a device for wet cleaning of substrates, which has at least one single-substrate coarse cleaning device with a liquid supply and a treatment container, in that at least one collecting tank that can be filled with treatment fluid for receiving several substrates, a batch fine cleaning device with a fluid container and at least one transport device for wet transport of the substrates between the single substrate coarse cleaning device and the collecting basin on the one hand and the collecting basin and the batch fine cleaning device on the other hand is provided.
Durch Vorsehen eines mit Behandlungsfluid füllbaren Sam- elbeckens zur Aufnahme mehrerer Substrate können dieBy providing a collecting basin that can be filled with treatment fluid to hold several substrates, the
Substrate nach einer Einzelsubstrat-Grobreinigung in dem Sammelbecken zwischengelagert werden bevor sie chargenweise in eine Feinreinigungseinrichtung transportiert werden können. Durch die Zwischenlagerung in einem Be- handlungsfluid besteht keine Gefahr, daß die nach der Grobreinigung an den Substraten anhaftende Flüssigkeit antrocknet und Schlieren bildet. Damit kann auch der bisher benötigten Trocknungsschritt zwischen einer Einzel- Grobreinigung und einer Chargen-Feinreinigung mit der Ge- fahr einer Beschädigung der Substrate entfallen. Darüber- hinaus wird die Behandlungsgeschwindigkeit und somit die Effizienz der Vorrichtung erhöht.After a single substrate rough cleaning, substrates are temporarily stored in the collecting basin before they can be transported in batches to a fine cleaning device. Due to the intermediate storage in a treatment fluid, there is no danger that the liquid adhering to the substrates after the rough cleaning will dry and form streaks. This means that the previously required drying step between a single coarse cleaning and a batch fine cleaning with the risk of damaging the substrates can also be omitted. In addition, the treatment speed and thus the efficiency of the device is increased.
Für eine gute Grobreinigungswirkung weist die Einzelsub- strat-Grobreinigungseinrichtung wenigstens eine drehbare Bürste auf. Gemäß einer Ausführungsform der Erfindung weist die Einzelsubstrat-Grobreinigungseinrichtung wenigstens eine drehbare Andrückrolle auf, um das Substrat während der Grobreinigung zu drehen und dadurch eine gleichmäßige Reinigungswirkung zu erhalten. Zur Erhöhung der Reinigungswirkung weist die Einzelsubstrat-Grobreinigungseinrichtung wenigstens einen Ultraschallsender auf. Gemäß einer bevorzugten Ausführungsform der Erfindung weist die Einzelsubstrat-Grobreinigungs- einrichtung zwei Behandlungsbecken mit jeweils wenigstens einer Flüssigkeitszufuhr und wenigstens einer Bürste auf. Hierdurch kann eine zweistufige und bessere Vorreinigung der Substrate erreicht werden.For a good coarse cleaning effect, the single substrate coarse cleaning device has at least one rotatable brush. According to one embodiment of the invention, the single substrate coarse cleaning device has at least one rotatable pressure roller in order to rotate the substrate during the coarse cleaning and thereby to obtain a uniform cleaning effect. To increase the cleaning effect, the single-substrate coarse cleaning device has at least one ultrasonic transmitter. According to a preferred embodiment of the invention, the single-substrate coarse cleaning device has two treatment tanks, each with at least one liquid supply and at least one brush. In this way, a two-stage and better pre-cleaning of the substrates can be achieved.
Gemäß einer bevorzugten Ausführungsform der Erfindung weisen die Einzelsubstrat-Grobreinigungseinrichtung, daß Sammelbecken, die Chargen-Feinreinigungseinrichtung sowie die Transportvorrichtung jeweils Haltemittel auf, um die Substrate in einer im wesentlichen gleichen, vorzugsweise vertikalen Ausrichtung zu halten. Hierdurch wird insbesondere die Transportvorrichtung vereinfacht, da diese das Substrat während des Transports nicht in eine andere Ausrichtung drehen muß. Vorteilhafterweise werden die Substrate im wesentlichen vertikal gehalten, um eine Kom- patibilität mit bekannten Chargen-Feinreinigungseinrichtungen zu erreichen.According to a preferred embodiment of the invention, the single substrate coarse cleaning device, the collecting basin, the batch fine cleaning device and the transport device each have holding means in order to hold the substrates in an essentially identical, preferably vertical, orientation. This in particular simplifies the transport device since it does not have to rotate the substrate into another orientation during transport. The substrates are advantageously held essentially vertically in order to achieve compatibility with known batch fine cleaning devices.
Vorzugsweise weist die Chargen-Feinreinigungseinrichtung wenigstens einen Einlaß für Reinigungs- und/oder Spül- flüssigkeit, sowie wenigstens einen Ultraschallsender auf, um eine gute Endreinigungswirkung zu erreichen.The batch fine cleaning device preferably has at least one inlet for cleaning and / or rinsing liquid, as well as at least one ultrasonic transmitter, in order to achieve a good final cleaning effect.
Um das Einbringen und Ausbringen der Substrate in bzw. aus der Chargen-Feinreinigungseinrichtung zu erleichtern weist sie eine Anheb- und Absenkvorrichtung für die Substrate auf.In order to facilitate the introduction and removal of the substrates in or from the batch fine cleaning device, it has a lifting and lowering device for the substrates.
Gemäß einer bevorzugten Ausführungsform der Erfindung weist die Transportvorrichtung eine Trocken-Transport- Haube mit Haltemitteln für die Substrate auf. Durch die Haltemittel in der Trocken-Transport-Haube wird ermöglicht, das die Substrate alleine, d. h. ohne einen ent- sprechenden Substratträger aufgenommen und transportiert werden können was die Gefahr einer Verunreinigung der Substrate durch einen Substratträger verringert.According to a preferred embodiment of the invention, the transport device has a dry transport hood with holding means for the substrates. The holding means in the dry transport hood enable the substrates to be used alone, ie without a speaking substrate carrier can be picked up and transported, which reduces the risk of contamination of the substrates by a substrate carrier.
Zur Beschleunigung eines Trocknungsvorgangs, beim Herausheben der Substrate aus einer in dem Fluidbehälter der Chargen-Feinreinigunseinrichtung befindlichen Flüssigkeit, weist die Trocken-Transport-Haube Mittel zum Einleiten eines Fluids in einen über einer Oberfläche der besagten Flüssigkeit befindlichen Trocknungsbereich auf.To accelerate a drying process, when the substrates are lifted out of a liquid located in the fluid container of the batch fine cleaning device, the dry transport hood has means for introducing a fluid into a drying area located above a surface of said liquid.
Vorzugsweise weist die Transportvorrichtung eine Naß- Transport-Haube zum Transport einer Charge aus Substraten von einem Sammelbecken zu der Chargen-Feinreinigungsein- richtung auf. Durch die Verwendung einer Naß-Transport- Haube neben der Trocken-Transport-Haube wird sichergestellt, daß die Trocken-Transport-Haube immer trocken ist, und somit die aufgenommen Substrate nicht verunreinigt .The transport device preferably has a wet transport hood for transporting a batch of substrates from a collecting basin to the batch fine cleaning device. The use of a wet transport hood next to the dry transport hood ensures that the dry transport hood is always dry and thus does not contaminate the substrates that have been taken up.
Für einen einfachen und platzsparenden Aufbau, sind die Einzelsubstrat-Grobreinigungseinrichtungen, daß Aufnahme- und Sammelbecken sowie die Chargen-Feinreinigungseinrichtung in einer Reihe angeordnet. Hierdurch wird auch die Transportvorrichtung vereinfacht, da diese nur lineare Bewegungen ausführen muß.For a simple and space-saving construction, the single-substrate coarse cleaning devices, the receiving and collecting basin and the batch fine cleaning device are arranged in a row. This also simplifies the transport device since it only has to perform linear movements.
Gemäß einer bevorzugten Ausführungsform der Erfindung weist die Vorrichtung einen Eingabebereich mit einer Auf- nähme sowie ein mit Flüssigkeit füllbares Eingangsbecken auf. Der Eingabebereich mit einer Aufnahme bringt den Vorteil, daß ein externer Händler ohne genaue zeitige Koordinierung mit den Einzelsubstrat-Grobreinigungseinrichtungen Substrate an die Vorrichtung liefern kann. Das mit Flüssigkeit füllbare Eingangsbecken verhindert gegebenenfalls ein antrocknen von an den Substraten anhaftenden Flüssigkeiten vor einer Grobreinigung. Für einen platzsparenden Aufbau der Gesamtvorrichtung sowie eine Vereinfachung der Transportvorrichtung sind die Einzelsubstrat-Grobreinigungseinrichtung, daß Sammelbek- ken, die Chargen-Feinreinigungseinrichtung, der Eingabebereich sowie das Eingangsbecken in einer Reihe angeordnet.According to a preferred embodiment of the invention, the device has an input area with a receptacle and an input basin which can be filled with liquid. The input area with a receptacle has the advantage that an external dealer can deliver substrates to the device without precise coordination with the individual substrate coarse cleaning devices. The inlet basin, which can be filled with liquid, may prevent liquids adhering to the substrates from drying out before rough cleaning. For a space-saving construction of the overall device and a simplification of the transport device, the single substrate coarse cleaning device, the collecting tank, the batch fine cleaning device, the input area and the entrance basin are arranged in a row.
Die Erfindung wird nachfolgend anhand eines bevorzugten Ausführungsbeispiels unter Bezugnahme auf die Zeichnungen erläutert; in den Zeichnungen zeigt:The invention is explained below using a preferred embodiment with reference to the drawings; in the drawings shows:
Fig. 1 eine perspektivische Ansicht einer Reinigungsvorrichtung für Substrate gemäß der vorliegenden Erfindung;1 is a perspective view of a cleaning device for substrates according to the present invention;
Fig. 2 eine Draufsicht auf die Reinigungsvorrichtung gemäß Fig. 1; Fig. 3 a und b eine Längsschnittansicht durch ein erstes Modul der Reinigungsvorrichtung gem. Fig. 1 und eine Querschnittansicht durch eineFIG. 2 shows a top view of the cleaning device according to FIG. 1; 3 a and b a longitudinal sectional view through a first module of the cleaning device according to. Fig. 1 and a cross-sectional view through a
Bürstenreinigungsvorrichtung des ersten Moduls; Fig. 4 eine schematische Schnittansicht einer Feinreinigungsvorrichtung.Brush cleaning device of the first module; Fig. 4 is a schematic sectional view of a fine cleaning device.
Die Figuren 1 und 2 zeigen die erfindungsgemäße Reinigungsvorrichtung 1, die im wesentlichen aus zwei Modulen 2 und 3 sowie einer die zwei Module bedienenden Transportvorrichtung 4 aufgebaut ist. Das erste Modul 2 bildet eine Eingabe- und Vorreinigungsstation, während das zweite Modul 3 eine Sammel-, Feinreinigungs- und Ausgabestation bildet.Figures 1 and 2 show the cleaning device 1 according to the invention, which is essentially composed of two modules 2 and 3 and a transport device 4 serving the two modules. The first module 2 forms an input and pre-cleaning station, while the second module 3 forms a collection, fine cleaning and output station.
Das Modul 2 weist einen Wafereingabebereich 5 mit einem Aufnahme- und Halteelement 7 für einen Wafer 8 auf. DasThe module 2 has a wafer input area 5 with a receiving and holding element 7 for a wafer 8. The
Aufnahme- und Halteelement 7 ist derart angeordnet, daß der Wafer 8 in einer vertikalen Position gehalten wird. Der Wafer 8 wird über einen externen, nicht dargestellten, Händler von einer Polierstation abgenommen, gegebenenfalls in die vertikale Position gedreht, und in die Aufnahme- und Haltevorrichtung 7 eingesetzt.The receiving and holding element 7 is arranged in such a way that the wafer 8 is held in a vertical position. The wafer 8 is removed from a polishing station via an external dealer (not shown), possibly rotated into the vertical position, and inserted into the holding and holding device 7.
Benachbart zu dem Aufnahmebereich 5 ist ein Aufnahmebek- ken 9 vorgesehen, welches mit einem Fluid wie beispielsweise Dl-Wasser gefüllt ist, und mehrere Wafer wie z. B. 5 Wafer aufnehmen kann.Adjacent to the receiving area 5 is a receiving basin 9, which is filled with a fluid such as DI water, and a plurality of wafers such as e.g. B. can accommodate 5 wafers.
Das Modul 2 weist ferner erste und zweite Bürstenreinigungseinrichtungen 10 und 11 auf, die benachbart zu der dem Aufnahmebecken 9 gegenüberliegenden Seite des Aufnahmebereichs 5 angeordnet sind. Die erste Bürstenreini- gungseinrichtung 10 weist wie am besten in Fig. 3a und b zu sehen ist, einen Deckel 14 und ein Behandlungsbecken 15 mit Überlauf auf, das von unten mit einer Behandlungsflüssigkeit 16 befüllt wird. Innerhalb des Beckens 15 ist ein Waferaufnahmeelement 17 in Form einer 3-Punkt Auflage derart angeordnet, daß es einen in das Becken 15 eingesetzten Wafer 8 so hält, daß dieser halb in die Behandlungsflüssigkeit 16 eingetaucht ist und vertikal gehalten wird. Die Bürstenreinigungseinrichtung 10 weist ferner zwei Bürstenrollen 20, 21 auf, die jeweils auf entgegen- gesetzten Seiten eines in das Becken 15 eingesetzten Wafers angeordnet sind, sowie zwei Andrückrollen 22, 24, die bei der Reinigung am Rand des Wafers 8 anliegen, um diesen zu drehen. Die Bürstenrollen 20, 21 erstrecken sich in Längsrichtung des Beckens 15 und sind derart oberhalb des Beckens 15 angeordnet, das sie sich zumindest teilweise in die Behandlungsflüssigkeit 16 im Becken 15 erstrecken. Die Bürstenrollen 20, 21 sind zur Reinigung eines in das Becken 15 eingesetzten Wafers 8 drehbar. Ferner weisen die Bürstenrollen einen Fluidkanal in ihrem Inneren auf, über den Behandlungsfluid von innen zur Außenseite der Bürstenrollen geleitet wird. In der ersten Bürstenreinigungseinrichtung 10 ist ferner wenigstens ein Ultraschallsender vorgesehen, um den Wafer zur besseren Reinigung mit Ultraschallwellen zu beschallen.The module 2 also has first and second brush cleaning devices 10 and 11, which are arranged adjacent to the side of the receiving area 5 opposite the receiving basin 9. As can best be seen in FIGS. 3a and b, the first brush cleaning device 10 has a cover 14 and a treatment basin 15 with an overflow, which is filled with a treatment liquid 16 from below. Within the basin 15, a wafer receiving element 17 is arranged in the form of a 3-point support such that it holds a wafer 8 inserted into the basin 15 so that it is half-immersed in the treatment liquid 16 and held vertically. The brush cleaning device 10 also has two brush rollers 20, 21, which are each arranged on opposite sides of a wafer inserted into the basin 15, and two pressure rollers 22, 24, which bear against the edge of the wafer 8 during cleaning, in order to do this rotate. The brush rollers 20, 21 extend in the longitudinal direction of the basin 15 and are arranged above the basin 15 such that they extend at least partially into the treatment liquid 16 in the basin 15. The brush rollers 20, 21 are rotatable for cleaning a wafer 8 inserted into the basin 15. Furthermore, the brush rollers have a fluid channel in their interior, via which treatment fluid is guided from the inside to the outside of the brush rollers. At least one ultrasonic transmitter is also provided in the first brush cleaning device 10 in order to sonicate the wafer with ultrasonic waves for better cleaning.
Die zweite Bürstenreinigungseinrichtung 11 ist im wesentlichen genauso aufgebaut wie das erste Bürstenbecken, jedoch ohne Ultraschallsender.The second brush cleaning device 11 is constructed essentially the same as the first brush basin, but without an ultrasonic transmitter.
Der Eingabebereich 5, das Aufbewahrungs- und Sammelbecken 8, sowie die Bürstenbecken 10 und 11 sind in einer Reihe in dem Modul 2 angeordnet.The input area 5, the storage and collection basin 8, and the brush basin 10 and 11 are arranged in a row in the module 2.
Das Modul 3 schließt seitlich direkt an das Modul 2 an, und zwar benachbart zu der zweiten Bürstenreinigungseinrichtung 11. Benachbart zu der Bürstenreinigunseinrich- tung 11 weist das Modul 3 ein Aufbewahrungs- und Sammelbecken 30 auf, das zur Aufnahme einer größeren Anzahl von Halbleiterwafern 8, wie z. B. 25 Halbleiterwafern, geeig- net ist. Zu diesem Zweck weist das Sammelbecken 30 eine nicht näher dargestellte Aufnahmevorrichtung sowie eine Anheb- und/oder Absenkvorrichtung für die Halbleiterwafer 8 auf. Das Sammelbecken 30 ist mit einem Behandlungs- fluid, wie z. B. Di-Wasser, derart gefüllt, daß die in dem Sammelbehälter 30 aufgenommenen Halbleiterwafer 8 vollständig in das Fluid eingetaucht sind. Das Becken 30 kann ein Überlaufbecken sein, obwohl dies nicht dargestellt ist.The module 3 connects laterally directly to the module 2, specifically adjacent to the second brush cleaning device 11. Adjacent to the brush cleaning device 11, the module 3 has a storage and collection basin 30 which is used to hold a larger number of semiconductor wafers 8, such as B. 25 semiconductor wafers is suitable. For this purpose, the collecting basin 30 has a receiving device (not shown in detail) and a lifting and / or lowering device for the semiconductor wafers 8. The collection basin 30 is filled with a treatment fluid, such as. B. di-water, filled so that the received in the collecting container 30 semiconductor wafer 8 are completely immersed in the fluid. The pool 30 may be an overflow pool, although this is not shown.
Benachbart zum Sammelbecken 30 ist eine Feinreinigungseinrichtung 35 vorgesehen, die am besten in Fig. 4 zu sehen ist.A fine cleaning device 35, which can best be seen in FIG. 4, is provided adjacent to the collecting basin 30.
Der Aufbau einer derartigen Feinreinigungseinrichtung 35 ist beispielsweise in der DE-A-44 13 077, der DE-A-195 46 990 oder der DE-A-196 37 875derselben Anmelderin beschrieben, deren Inhalte zum Gegenstand der vorliegenden Anmeldung gemacht wird, um Wiederholungen zu vermeiden. Als Grundelemente weist die Feinreinigungseinrichtung 35 ein Behandlungsbecken 36 auf, das wahlweise gleichzeitig und/oder abwechselnd mit einem Behandlungsfluid, wie z. B. einer Ätzflüssigkeit, einer chemischen Reinigungsflüssigkeit und/oder einer Spülflüssigkeit gefüllt wird. Ferner ist in dem Becken eine Anheb- und Absenkvorrichtung 37 in der Form eines Messers für die Halbleiterwafer 8 vorgesehen. Die Feinreinigungseinrichtung 35 weist ferner wenigstens einen nicht dargestellten Ultraschallsender auf, um die in dem Behandlungsbecken 36 und dem Behand- lungsfluid befindlichen Wafer mit Ultraschallwellen zu beschallen. Im unteren Bereich des Behandlungsbeckens 36 sind Einlaßdüsen 38 für das Behandlungsfluid, sowie ein Auslaß 39 in der Form eines Quick-Dump-Ventils vorgesehen, über das das Behandlungsfluid abgelassen wird.The structure of such a fine cleaning device 35 is described, for example, in DE-A-44 13 077, DE-A-195 46 990 or DE-A-196 37 875 by the same applicant, the contents of which are the subject of the present application Registration is made to avoid repetitions. As basic elements, the fine cleaning device 35 has a treatment basin 36, which can optionally be used simultaneously and / or alternately with a treatment fluid, such as, for example, B. an etching liquid, a chemical cleaning liquid and / or a rinsing liquid. Furthermore, a lifting and lowering device 37 in the form of a knife for the semiconductor wafer 8 is provided in the basin. The fine cleaning device 35 also has at least one ultrasound transmitter (not shown) in order to sonicate the wafers located in the treatment basin 36 and the treatment fluid with ultrasound waves. In the lower region of the treatment basin 36 there are inlet nozzles 38 for the treatment fluid and an outlet 39 in the form of a quick dump valve, via which the treatment fluid is drained off.
Benachbart zu der Feinreinigungseinrichtung 35 ist eine Ausgabestation 40 vorgesehen, auf der die gereinigten und getrockneten Wafer abgelegt werden, und von der aus diese abtransportiert werden.An output station 40 is provided adjacent to the fine cleaning device 35, on which the cleaned and dried wafers are placed and from which they are transported away.
Die die beiden Module 2 und 3 bedienende Transportvorrichtung 4 weist einen ersten horizontal und vertikal be- wegbaren Händler 50 auf, zum Transport der Wafer 8 vomThe transport device 4 operating the two modules 2 and 3 has a first horizontally and vertically movable dealer 50 for transporting the wafers 8 from
Eingabebereich 5 in das Aufnahmebecken 9 und vom Aufnahmebecken 9 zur ersten Bürstenreinigungseinrichtung 10. Der Händler 50 weist in bekannter Weise eine Greifvorrichtung 51 für die Wafer 8 auf, die als sogenannter Ed- ge-Gripper ausgebildet ist. Die GreifVorrichtung ist über Verbindungselemente 52 beabstandet zu und vertikal bewegbar zu einer ersten Vertikalstrebe 55 der Transportvorrichtung 4 mit dieser verbunden. Die Vertikalstrebe 55 ist wiederum horizontal bewegbar an Horizontalstreben 56, 57 der Transportvorrichtung 4 angebracht. Die Vertikalbewegung der Greifvorrichtung erfolgt somit entlang der Strebe 55, während die Horizontalbewegung durch eine Bewegung der Strebe 55 entlang der Streben 56, 57 erfolgt.Input area 5 into the receiving basin 9 and from the receiving basin 9 to the first brush cleaning device 10. The dealer 50 has, in a known manner, a gripping device 51 for the wafer 8, which is designed as a so-called edge gripper. The gripping device is connected to the first vertical strut 55 of the transport device 4 by means of connecting elements 52 spaced apart and vertically movable. The vertical strut 55 is in turn horizontally movable attached to horizontal struts 56, 57 of the transport device 4. The vertical movement of the gripping device thus takes place along the Strut 55, while the horizontal movement takes place by moving the strut 55 along the struts 56, 57.
Die Transportvorrichtung 4 weist ferner einen zweiten Händler 60 auf, der im wesentlichen dem ersten Händler 50 gleicht, und der wiederum entlang Vertikal- und Horizontalstreben vertikal und horizontal bewegbar ist. Der Händler 60 dient zum Transport der einzelnen Wafer 8 von der ersten Bürstenreinigungseinrichtung 10 in die zweite Bürstenreinigunseinrichtung 11 und aus der zweiten Bürstenreinigungseinrichtung 11 in das Aufbewahrungs- und Sammelbecken 30 des zweiten Moduls 3.The transport device 4 also has a second dealer 60, which is essentially the same as the first dealer 50, and which in turn can be moved vertically and horizontally along vertical and horizontal struts. The dealer 60 serves to transport the individual wafers 8 from the first brush cleaning device 10 into the second brush cleaning device 11 and from the second brush cleaning device 11 into the storage and collection basin 30 of the second module 3.
Die Transportvorrichtung 4 weist ferner eine Naß-Trans- fer-Haube 65 zum Transport einer Charge von Wafern aus dem Sammelbecken 30 in die Feinreinigungseinrichtung 35 auf. Eine derartige Naß-Transfer-Haube 65 ist beispielsweise aus der DE-A-196 52 526 derselben Anmelderin bekannt, die insofern zum Gegenstand der vorliegenden An- meidung gemacht wird, um Wiederholungen zu vermeiden.The transport device 4 also has a wet transfer hood 65 for transporting a batch of wafers from the collecting basin 30 into the fine cleaning device 35. Such a wet transfer hood 65 is known, for example, from DE-A-196 52 526 by the same applicant, which is made the subject of the present disclosure in order to avoid repetitions.
Die Transportvorrichtung 4 weist ferner eine Trocken- Transfer-Haube 70 auf, die beispielsweise in der DE-A-196 52 526 derselben Anmelderin beschrieben ist. Um Wiederho- lungen zu vermeiden, wird der Inhalt der Voranmeldung insofern zum Gegenstand der vorliegenden Anmeldung gemacht. Die Trocken-Transfer-Haube 70, die schematisch in Fig. 4 gezeigt ist, dient zur Aufnahme der aus dem Behandlungsbecken 36 herausgehobenen Wafer und zum Transport dersel- ben zu der Ausgabestation 40. Die Trocken-Transfer-Haube weist seitliche Führungen 71 zur Aufnahme und Führung der Wafer 8, sowie ein Verriegelungselement 72 auf, um die aufgenommenen Wafer zu halten. Ferner weist der Deckel 70 eine Gaszufuhr 75 auf, über die ein Gasgemisch, das bei- spielsweise aus Stickstoff und Isopropylalkohol (N2/IPA) besteht, eingeführt werden kann. Das Sammelbecken 30, die Feinreinigungseinrichtung 35 sowie die Ausgabeeinheit 40 sind in einer Reihe mit dem Eingabebereich 5, dem Aufnahme- und Sammelbecken 8, und den ersten und zweiten Bürstenreinigungseinrichtungen 10 und 11 angeordnet.The transport device 4 also has a dry transfer hood 70, which is described for example in DE-A-196 52 526 by the same applicant. In order to avoid repetition, the content of the pre-registration is made the subject of the present application. The dry transfer hood 70, which is shown schematically in FIG. 4, serves to receive the wafers lifted out of the treatment basin 36 and to transport them to the output station 40. The dry transfer hood has lateral guides 71 for receiving and guiding the wafers 8 and a locking element 72 in order to hold the received wafers. Furthermore, the cover 70 has a gas feed 75, via which a gas mixture, which consists, for example, of nitrogen and isopropyl alcohol (N 2 / IPA), can be introduced. The collecting basin 30, the fine cleaning device 35 and the dispensing unit 40 are arranged in a row with the input area 5, the receiving and collecting basin 8, and the first and second brush cleaning devices 10 and 11.
Beim Betrieb der erfindungsgemäßen Vorrichtung wird ein Wafer 8 von einem externen, nicht gezeigten Naß-Roboter von einer nicht gezeigten Polisher-Output-Station aufge- nommen, gegebenenfalls in eine vertikale Position gedreht und auf dem Aufnahme- und Halteelement 7 des Eingabebereichs 5 abgelegt. Nachfolgend greift der Händler 50 den Wafer und transportiert ihn zunächst in das flüssigkeitsgefüllte Aufnahmebecken 9, und legt diesen darin ab. Das Aufnahmebecken 9 kann beispielsweise bis zu fünf Wafer aufnehmen.During operation of the device according to the invention, a wafer 8 is picked up by an external wet robot, not shown, from a polisher output station, not shown, possibly rotated into a vertical position, and placed on the receiving and holding element 7 of the input area 5. The dealer 50 then grips the wafer and first transports it into the liquid-filled receptacle 9, and deposits it therein. The receiving basin 9 can accommodate up to five wafers, for example.
Nachfolgend holt der Händler 50 den Wafer wieder aus dem Aufnahmebecken 9 heraus und fährt ihn über die erste Bür- stenreinigungseinrichtung 10, dessen Deckel 14 sich öffnet. Der Händler 50 legt den Wafer auf der Auflage 17 im Behandlungsbecken 15 ab und bewegt sich aus der Bürstenreinigungseinrichtung heraus. Die Andrückrollen 22, 24 und die Bürstenrollen 20, 21 werden mit dem Wafer in Ein- griff gebracht, und das Behandlungsbecken 15 wird bis zum Überlaufen mit einer Flüssigkeit 16, wie beispielsweise Di-Wasser gefüllt, so daß der Wafer 8 halb eingetaucht ist. Die Bürstenrollen 20, 21 werden gedreht und drücken dadurch den Wafer 8 leicht nach oben gegen die Andrück- rollen 22, 24, wodurch der Wafer 8 von der Aufnahme 17 abgehoben wird und durch die sich drehenden Andrückrollen 22, 24 in eine Drehbewegung versetzt wird. Durch die Bürstenrollen 20, 21 wird der Wafer grob gereinigt. Während dieses Bürstens wird der Ultraschallsender aktiviert, um dadurch die Reinigungswirkung zu erhöhen. Die Drehgeschwindigkeit der Bürstenrollen 20, 21 und der Andrückrollen 22, 24 wird gegen Ende der Reinigung verlangsamt, wodurch der Wafer 8 wieder in die Aufnahme 7 abgesenkt wird. Die Burstenrollen 20, 21 und die Andruckrollen 22, 24 werden vom Wafer 8 weg bewegt und der Deckel 14 der Burstenreimgungseinrichtung 10 öffnet sich. Der zweite Handler 60 bewegt sich über die erste Burstenreinigungs- einrichtung 10, greift den Wafer 8 und transportiert ihn in die zweite Burstenreinigungseinrichtung 11, wo er den Wafer 8 auf einer Auflage ablegt. Im Burstenbecken 11 wird der Reinigungsvorgang vom ersten Bürstenbecken 10 im wesentlichen wiederholt, wobei diesmal kein Ultraschall eingesetzt wird, und das im Behandlungsbecken befindliche Wasser auch nicht zum Überlaufen gebracht wird.The dealer 50 then takes the wafer out of the receiving basin 9 again and drives it over the first brush cleaning device 10, the lid 14 of which opens. The dealer 50 deposits the wafer on the support 17 in the treatment basin 15 and moves out of the brush cleaning device. The pressure rollers 22, 24 and the brush rollers 20, 21 are brought into engagement with the wafer, and the treatment tank 15 is filled with a liquid 16, for example di-water, until it overflows, so that the wafer 8 is half-immersed. The brush rollers 20, 21 are rotated and thereby press the wafer 8 slightly upwards against the pressure rollers 22, 24, as a result of which the wafer 8 is lifted off the receptacle 17 and is set into a rotary movement by the rotating pressure rollers 22, 24. The wafer is roughly cleaned by the brush rollers 20, 21. During this brushing, the ultrasound transmitter is activated, thereby increasing the cleaning effect. The rotational speed of the brush rollers 20, 21 and the pressure rollers 22, 24 is slowed down towards the end of the cleaning, whereby the wafer 8 is lowered back into the receptacle 7. The brush rollers 20, 21 and the pressure rollers 22, 24 are moved away from the wafer 8 and the lid 14 of the brush cleaning device 10 opens. The second handler 60 moves over the first brush cleaning device 10, grips the wafer 8 and transports it into the second brush cleaning device 11, where it deposits the wafer 8 on a support. In the brush basin 11, the cleaning process from the first brush basin 10 is essentially repeated, this time using no ultrasound, and the water in the treatment basin is also not made to overflow.
Nach der Reinigung in der zweiten Burstenreinigungsein- richtung 11 wird der Wafer durch den zweiten Handler 60 ergriffen, über das Sammelbecken 30 transportiert und in die darin befindliche Aufnahmevorrichtung eingesetzt. Die vorangegangenen Schritte werden mit jeweils neuen Wafern wiederholt, bis alle Plätze im Sammelbecken 30 besetzt sind.After cleaning in the second brush cleaning device 11, the wafer is gripped by the second handler 60, transported over the collecting basin 30 and inserted into the receiving device located therein. The previous steps are repeated with new wafers in each case until all the places in the collecting basin 30 are occupied.
Wenn alle Platze im Sammelbecken 30 besetzt sind, wird die Naß-Transfer-Haube 65 über das Sammelbecken 30 bewegt, und alle Wafer 8 werden gemeinsam aus dem Sammel- becken 30 in die Naß-Transfer-Haube 65 gehoben und verriegelt. Wenn die Wafer 8 in der Naß-Transfer-Haube 65 verriegelt sind, fahrt sie über die Feinreinigungseinrichtung 35. Die in dem Behandlungsbecken 36 befindliche Anheb- und Absenkvorrichtung 37 wird hochgefahren, um die in der Naß-Transfer-Haube 65 aufgenommenen Wafer 8 aufzunehmen. Daraufhin lost sich der Verriegelungsmechanismus der Naß-Transfer-Haube 65 und die Wafer 8 werden gemeinsam über die Anheb-/Absenkvorrichtung 37 in das Behandlungsbecken 36, das mit einem Behandlungsfluid, wie z. B. Di-Wasser gefüllt ist, abgesenkt. Aus den Düsen 38 imWhen all the seats in the collecting basin 30 are occupied, the wet transfer hood 65 is moved over the collecting basin 30, and all wafers 8 are lifted together from the collecting basin 30 into the wet transfer hood 65 and locked. When the wafers 8 are locked in the wet transfer hood 65, they move over the fine cleaning device 35. The lifting and lowering device 37 located in the treatment basin 36 is raised in order to receive the wafers 8 accommodated in the wet transfer hood 65 . Then the locking mechanism of the wet transfer hood 65 and the wafers 8 are released together via the lifting / lowering device 37 into the treatment basin 36, which is filled with a treatment fluid such as e.g. B. Di-water is filled, lowered. From the nozzles 38 in
Beckenboden wird Reimgungsflüssigkeit zwischen die Wafer 8 gespritzt. Das Di-Wasser im Behalter wird dabei nach oben verdrangt und lauft über einen Überlauf ab. Der Ultraschallsender wird für eine bestimmte Behandlungszelt aktiviert. Nachfolgend wird die Reimgungsflüssigkeit mittels eines Schnellablaßventils (Quick Dump) 39 nach unten abgelassen und der Behalter wird wiederum von unten mit Di-Wasser gefüllt. Die Trocken-Transfer-Haube 70 wird über das Behandlungsbecken 36 bewegt, und über die Haube 70 wird ein Gasgemisch, wie beispielsweise N2/IPA als Schicht über die Oberflache des Dl-Wassers eingeleitet. Anschließend werden die Wafer 8 gemeinsam mit der Anheb- /Absenkvorrichtung 37 aus dem Di-Wasser m die Trocken- Transfer-Haube 70 gehoben. Wenn sich die Wafer 8 m der Trocken-Transfer-Haube 70 befinden, wird der Verriegelungsmechanismus 72 der Haube betätigt, um die Wafer 8 zu halten.Cleaning liquid is injected between the wafers 8 in the pelvic floor. The di-water in the container will then become displaced above and runs over an overflow. The ultrasound transmitter is activated for a specific treatment tent. Subsequently, the cleaning liquid is drained down by means of a quick dump valve 39 and the container is again filled with di-water from below. The dry transfer hood 70 is moved over the treatment basin 36, and a gas mixture, such as N 2 / IPA, is introduced as a layer over the surface of the DI water via the hood 70. Then the wafers 8 are lifted from the di-water m together with the lifting / lowering device 37, the dry transfer hood 70. When the wafers 8 m of the dry transfer hood 70 are located, the locking mechanism 72 of the hood is actuated to hold the wafers 8.
Nachfolgend fahrt die Trocken-Transfer-Haube 70 über die Ausgabestation 40 und legt die Wafer 8 durch Offnen des Verπegelungsmechanismus 72 auf einer Waferaufnähme der Ausgabestation 40 ab. Von der Ausgabestation werden die Wafer 8 mit einem externen Trocken-Roboter abgeholt.The dry transfer hood 70 then travels over the output station 40 and deposits the wafers 8 on the wafer holder of the output station 40 by opening the locking mechanism 72. The wafers 8 are picked up from the output station with an external drying robot.
Die vorliegende Erfindung wurde anhand eines speziellen Ausfuhrungsbeispiels beschrieben. Die Erfindung ist aber nicht auf dieses spezielle Ausfuhrungsbeispiel beschrankt. Beispielsweise wäre es denkbar, statt zwei Bur- stenreinigungsemrichtung 10, 11, nur eine Burstenreini- gungsemrichtung vorzusehen, m der gegebenenfalls eine einstufige oder auch mehrstufige Vorreinigung stattfm- det. Auch wäre es denkbar, das Aufnahmebecken 9 wegzulassen, und die Wafer direkt mit dem Handler 50 von dem Ein- gabebereich 5 in das erste Burstenbecken 10 zu transportieren. Dies setzt allerdings ein sehr genaues T ming voraus, da der Wafer nicht zu lange in dem Aufnahmebe- reich verweilen sollte, da ansonsten an dem Wafer befind- licne Flüssigkeiten antrocknen konnten. Ferner st es auch möglich, daß die Wafer durch einen externen Roboter direkt in das Aufnahmebecken 9 eingesetzt werden und der Händler 50 die Wafer nur aus dem Aufnahme- und Sammelbek- ken 9 in die Bürstenreinigungseinrichtung 10 transportiert . The present invention has been described using a specific exemplary embodiment. However, the invention is not restricted to this special exemplary embodiment. For example, instead of two brush cleaning devices 10, 11, it would be conceivable to provide only one brush cleaning device, in which a single-stage or also multi-stage pre-cleaning takes place. It would also be conceivable to omit the receiving basin 9 and to transport the wafers directly from the input region 5 into the first brush basin 10 using the handler 50. However, this requires a very precise timing, since the wafer should not remain in the receiving area for too long, since otherwise liquids present on the wafer could dry out. It is also possible that the wafers are operated by an external robot are inserted directly into the receiving basin 9 and the dealer 50 only transports the wafers from the receiving and collecting basin 9 into the brush cleaning device 10.

Claims

Patentansprüche claims
1. Verfahren zum Reinigen von Substraten (8), bei dem a) die Substrate (8) jeweils einzeln in wenigstens einer Grobreinigungseinrichtung (10, 11) naß vorgereinigt werden; b) die Substrate (8) nachfolgend im nassen Zustand in ein mit Behandlungsfluid gefülltes Sammelbecken (30) transportiert werden; c) die Substrate (8) in dem Sammelbecken (30) gesammelt werden; d) die Substrate (8) beim Erreichen einer bestimmten Anzahl in dem Sammelbecken (30) gemeinsam als eine Charge im nassen Zustand in eine Fein- reinigungseinrichtung (35) transportiert werden; e) die Charge aus Substraten (8) in der Feinreinigungseinrichtung (35) naß endgereinigt wird; und f) die Charge nachfolgend getrocknet wird.1. A method for cleaning substrates (8), in which a) the substrates (8) are each individually wet pre-cleaned in at least one coarse cleaning device (10, 11); b) the substrates (8) are subsequently transported in the wet state into a collecting basin (30) filled with treatment fluid; c) the substrates (8) are collected in the collecting basin (30); d) when a certain number is reached in the collecting basin (30), the substrates (8) are transported together as a batch in the wet state into a fine cleaning device (35); e) the batch of substrates (8) is wet final cleaned in the fine cleaning device (35); and f) the batch is subsequently dried.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Substrat (8) mit wenigstens einer Bürste (20, 21) und wenigstens einer Behandlungsflüssigkeit (16) vorgereinigt wird.2. The method according to claim 1, characterized in that the substrate (8) with at least one brush (20, 21) and at least one treatment liquid (16) is pre-cleaned.
3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß die wenigstens eine Bürste (20, 21) zum Vorreinigen des Substrats (8) gedreht wird.3. The method according to claim 2, characterized in that the at least one brush (20, 21) for pre-cleaning the substrate (8) is rotated.
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß das Substrat (8) während der Vorreinigung gedreht wird.4. The method according to any one of claims 1 to 3, characterized in that the substrate (8) is rotated during the pre-cleaning.
5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß das Substrat (8) bei der Vorreinigung mit Megasonic beschallt wird. 5. The method according to any one of claims 1 to 4, characterized in that the substrate (8) is sonicated during the pre-cleaning with Megasonic.
6. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß das Substrat (8) in zwei unterschiedlichen Grobreinigungseinrichtungen (10, 11) vorgereinigt wird, und im nassen Zustand von einer ersten Grobreinigungseinrichtung (10) zu einer zweiten Grobreinigungseinrichtung (11) transportiert wird.6. The method according to any one of claims 1 to 5, characterized in that the substrate (8) in two different coarse cleaning devices (10, 11) is pre-cleaned, and in the wet state from a first coarse cleaning device (10) to a second coarse cleaning device (11) is transported.
7. Verfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die Substrate (8) während der Verfahrensschritte in einer im wesentlichen gleichen Orientierung gehalten werden.7. The method according to any one of claims 1 to 6, characterized in that the substrates (8) are kept in an essentially identical orientation during the process steps.
8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß die Substrate (8) im wesentlichen vertikal gehalten werden.8. The method according to claim 7, characterized in that the substrates (8) are held substantially vertically.
9. Verfahren nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, daß die Substrate (8) bei der Endreinigung wenigstens einer Reinigungs- und/oder Spülflüssigkeit ausgesetzt werden.9. The method according to any one of claims 1 to 8, characterized in that the substrates (8) are exposed to at least one cleaning and / or rinsing liquid during the final cleaning.
10. Verfahren nach Anspruch 9, dadurch gekennzeichnet, daß die Substrate (8) vollständig in die Reinigungsund/oder Spülflüssigkeit eingetaucht werden.10. The method according to claim 9, characterized in that the substrates (8) are completely immersed in the cleaning and / or rinsing liquid.
11. Verfahren nach Anspruch 9 oder 10, dadurch gekennzeichnet, daß die Substrate (8) mit der Reinigungs- und/oder Spülflüssigkeit umspült werden.11. The method according to claim 9 or 10, characterized in that the substrates (8) are washed around with the cleaning and / or rinsing liquid.
12. Verfahren nach einem der Ansprüche 9 bis 11, dadurch gekennzeichnet, daß die Substrate (8) mit Megasonic beschallt werden.12. The method according to any one of claims 9 to 11, characterized in that the substrates (8) are sonicated with Megasonic.
13. Verfahren nach einem der Ansprüche 9 bis 12, dadurch gekennzeichnet, daß die Substrate (8) nach der Endreinigung zum Trocknen aus der Reinigungsund/oder Spülflüssigkeit herausbewegt werden.13. The method according to any one of claims 9 to 12, characterized in that the substrates (8) according to the Final cleaning to be moved out of the cleaning and / or rinsing liquid to dry.
14. Verfahren nach Anspruch 13, dadurch gekennzeichnet, daß die Substrate (8) in eine Trocken-Transfer-Haube eingeführt und in dieser verriegelt werden.14. The method according to claim 13, characterized in that the substrates (8) are inserted into a dry transfer hood and locked therein.
15. Verfahren nach Anspruch 13 oder 14, dadurch gekennzeichnet, daß vor und/oder während dem Herausbewegen der Substrate (8) aus der Reinigungs- und/oder Spülflüssigkeit ein Fluid in den Trocknungsbereich eingeleitet wird.15. The method according to claim 13 or 14, characterized in that a fluid is introduced into the drying area before and / or during the removal of the substrates (8) from the cleaning and / or rinsing liquid.
16. Verfahren nach Anspruch 15, dadurch gekennzeichnet, daß das Fluid in die Trocken-Transfer-Haube (70) eingeleitet wird.16. The method according to claim 15, characterized in that the fluid is introduced into the dry transfer hood (70).
17. Verfahren nach Anspruch 15 oder 16, dadurch gekennzeichnet, daß das Fluid ein Gasgemisch aus Stick- stoff und Isopropylalkohol ist.17. The method according to claim 15 or 16, characterized in that the fluid is a gas mixture of nitrogen and isopropyl alcohol.
18. Vorrichtung zum Naßreinigen von Substraten (8), die folgendes aufweist: wenigsten eine Einzelsubstrat-Grobreinigungseinrich- tung (10, 11) mit einer Flüssigkeitszufuhr und einem Behandlungsbehälter (15) ; wenigstens ein mit Behandlungsfluid füllbares Sammelbecken (30) zur Aufnahme mehrerer Substrate (8); eine Chargen-Feinreinigungseinrichtung (35) mit ei- nem Fluidbehälter (36) ; und wenigstens eine Transportvorrichtung (4) zum Transport der Substrate (8) zwischen der Einzelsubstrat- Grobreinigungseinrichtung (10, 11) und dem Sammelbecken (30) einerseits und dem Sammelbecken (30) und der Chargen-Feinreinigungseinrichtung (35) andererseits . 18. Device for wet cleaning of substrates (8), comprising: at least one single-substrate coarse cleaning device (10, 11) with a liquid supply and a treatment container (15); at least one collecting basin (30) which can be filled with treatment fluid for receiving a plurality of substrates (8); a batch fine cleaning device (35) with a fluid container (36); and at least one transport device (4) for transporting the substrates (8) between the single substrate coarse cleaning device (10, 11) and the collecting basin (30) on the one hand and the collecting basin (30) and the batch fine cleaning device (35) on the other hand.
19. Vorrichtung nach Anspruch 18, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtung (10, 11) wenigstens eine Bürste (20, 21) aufweist .19. The apparatus according to claim 18, characterized in that the single substrate coarse cleaning device (10, 11) has at least one brush (20, 21).
20. Vorrichtung nach Anspruch 19, dadurch gekennzeichnet, daß die wenigstens eine Bürste (20, 21) zum Reinigen des Substrats (8) drehbar ist.20. The apparatus according to claim 19, characterized in that the at least one brush (20, 21) for cleaning the substrate (8) is rotatable.
21. Vorrichtung nach einem der Ansprüche 18 bis 20, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtung (10, 11) wenigstens eine drehbare Andrückrolle (22, 24) aufweist.21. Device according to one of claims 18 to 20, characterized in that the single substrate coarse cleaning device (10, 11) has at least one rotatable pressure roller (22, 24).
22. Vorrichtung nach einem der Ansprüche 18 bis 21, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtung (10) wenigstens einen Ultraschallsender aufweist.22. The device according to one of claims 18 to 21, characterized in that the single substrate coarse cleaning device (10) has at least one ultrasonic transmitter.
23. Vorrichtung nach einem der Ansprüche 18 bis 22, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtung (10, 11) zwei Behandlungsbecken mit jeweils wenigstens einer Flüssigkeitszufuhr aufweist.23. Device according to one of claims 18 to 22, characterized in that the single-substrate coarse cleaning device (10, 11) has two treatment tanks, each with at least one liquid supply.
24. Vorrichtung nach Anspruch 23, dadurch gekennzeichnet, daß in jedem der Becken wenigstens eine Bürste vorgesehen ist.24. The device according to claim 23, characterized in that at least one brush is provided in each of the basins.
25. Vorrichtung nach einem der Ansprüche 18 bis 24, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtung (10, 11), das Sammelbecken (30) , die Chargen-Feinreinigungseinrichtung (35) sowie die Transportvorrichtung (4) jeweils Haltemittel aufweisen, um die Substrate (8) in einer im wesentlichen gleichen Ausrichtung zu halten. 25. Device according to one of claims 18 to 24, characterized in that the single substrate coarse cleaning device (10, 11), the collecting basin (30), the batch fine cleaning device (35) and the transport device (4) each have holding means to the Keep substrates (8) in a substantially same orientation.
26. Vorrichtung nach Anspruch 25, dadurch gekennzeichnet, daß die jeweiligen Haltevorrichtungen die Substrate (8) im wesentlichen vertikal halten.26. The apparatus according to claim 25, characterized in that the respective holding devices hold the substrates (8) substantially vertically.
27. Vorrichtung nach einem der Ansprüche 18 bis 26, dadurch gekennzeichnet, daß die Chargen-Feinreinigungseinrichtung (35) wenigstens einen Einlaß (38) für Reinigungs- und/oder Spülflüssigkeit aufweist.27. The device according to one of claims 18 to 26, characterized in that the batch fine cleaning device (35) has at least one inlet (38) for cleaning and / or rinsing liquid.
28. Vorrichtung nach einem der Ansprüche 18 bis 27, dadurch gekennzeichnet, daß die Chargen-Feinreinigungseinrichtung (35) wenigstens einen Ultraschallsender aufweist.28. Device according to one of claims 18 to 27, characterized in that the batch fine cleaning device (35) has at least one ultrasonic transmitter.
29. Vorrichtung nach einem der Ansprüche 18 bis 28, dadurch gekennzeichnet, daß die Chargen-Feinreinigungseinrichtung eine Anheb- und Absenkvorrichtung (37) für die Substrate (8) aufweist.29. Device according to one of claims 18 to 28, characterized in that the batch fine cleaning device has a lifting and lowering device (37) for the substrates (8).
30. Vorrichtung nach einem der Ansprüche 18 bis 29, dadurch gekennzeichnet, daß die Transportvorrichtung (4) eine Trocken-Transport-Haube (70) mit Haltemitteln (71, 72) für die Substrate (8) aufweist.30. Device according to one of claims 18 to 29, characterized in that the transport device (4) has a dry transport hood (70) with holding means (71, 72) for the substrates (8).
31. Vorrichtung nach Anspruch 30, dadurch gekennzeichnet, daß die Trocken-Transport-Haube (70) Mittel (75) zum Einleiten eines Fluids in einen Trocknungsbereich über einer Oberfläche einer in dem Fluidbehälter (36) befindlichen Flüssigkeit aufweist.31. The device according to claim 30, characterized in that the dry transport hood (70) has means (75) for introducing a fluid into a drying area above a surface of a liquid in the fluid container (36).
32. Vorrichtung nach einem der Ansprüche 18 bis 31, dadurch gekennzeichnet, daß die Transportvorrichtung (4) eine Naß-Transport-Haube (60) zum Transport einer Charge aus Substraten (8) von dem Sammelbecken (30) zu der Chargen-Feinreinigungseinrichtung (35) aufweist . 32. Device according to one of claims 18 to 31, characterized in that the transport device (4) a wet transport hood (60) for transporting a batch of substrates (8) from the collecting basin (30) to the batch fine cleaning device ( 35).
33. Vorrichtung nach einem der Ansprüche 18 bis 34, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtungen (10, 11), das Aufnahme- und Sammelbecken (30) , sowie die Chargen-Feinreinigungseinrichtung (35) in einer Reihe angeordnet sind.33. Device according to one of claims 18 to 34, characterized in that the single substrate coarse cleaning devices (10, 11), the receiving and collecting basin (30), and the batch fine cleaning device (35) are arranged in a row.
34. Vorrichtung nach einem der Ansprüche 18 bis 32, gekennzeichnet durch einen Eingabebereich (5) mit einer Aufnahme (7).34. Device according to one of claims 18 to 32, characterized by an input area (5) with a receptacle (7).
35. Vorrichtung nach einem der Ansprüche 18 bis 33, gekennzeichnet durch ein mit Flüssigkeit füllbares Eingangsbecken (9).35. Device according to one of claims 18 to 33, characterized by an inlet tank (9) which can be filled with liquid.
36. Vorrichtung nach den Ansprüchen 34 und 35, dadurch gekennzeichnet, daß die Einzelsubstrat-Grobreinigungseinrichtung (10, 11), das Sammelbecken (30), die Chargen-Feinreinigungseinrichtung (35) , der Eingabebereich (5) sowie das Eingangsbecken (9) in ei- ner Reihe angeordnet sind. 36. Device according to claims 34 and 35, characterized in that the single substrate coarse cleaning device (10, 11), the collecting basin (30), the batch fine cleaning device (35), the input area (5) and the input basin (9) in are arranged in a row.
EP99934565A 1998-07-06 1999-07-03 Method and device for cleaning substrates Withdrawn EP1101245A2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19830162 1998-07-06
DE19830162A DE19830162A1 (en) 1998-07-06 1998-07-06 Method and device for cleaning substrates
PCT/EP1999/004633 WO2000002234A2 (en) 1998-07-06 1999-07-03 Method and device for cleaning substrates

Publications (1)

Publication Number Publication Date
EP1101245A2 true EP1101245A2 (en) 2001-05-23

Family

ID=7873131

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99934565A Withdrawn EP1101245A2 (en) 1998-07-06 1999-07-03 Method and device for cleaning substrates

Country Status (6)

Country Link
EP (1) EP1101245A2 (en)
JP (1) JP2002520132A (en)
KR (1) KR20010071759A (en)
DE (1) DE19830162A1 (en)
TW (1) TW439135B (en)
WO (1) WO2000002234A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010096566A (en) * 2000-04-11 2001-11-07 윤종용 Semiconductor wafer cleaning apparatus and method thereof using the same
US6732750B2 (en) 2000-04-11 2004-05-11 Samsung Electronics Co., Ltd. Semiconductor wafer cleaning apparatus and method of using the same
DE10103111A1 (en) * 2001-01-24 2002-08-01 Mattson Wet Products Gmbh Device for treating substrates
DE10122669A1 (en) * 2001-05-10 2002-12-12 Mattson Wet Products Gmbh Device for wet cleaning of disc-shaped substrates
DE10200525A1 (en) * 2002-01-09 2003-10-23 Mattson Wet Products Gmbh Device and method for treating disc-shaped substrates
DE10219771B4 (en) * 2002-05-03 2006-05-11 Emag Ag Device for automatic cleaning of vacuum holders or pipettes accommodated in machine cassettes
KR100677034B1 (en) * 2003-10-20 2007-01-31 동부일렉트로닉스 주식회사 Methods and apparatus for cleaning semiconductor devices
TWI415533B (en) * 2010-09-15 2013-11-11 Zhen Ding Technology Co Ltd Apparatus and method for wet process
CN109518203B (en) * 2018-12-13 2020-10-30 江苏美霖铜业有限公司 Non ferrous metal surface treatment device
DE102022104205B3 (en) 2022-02-22 2023-06-22 Hiwin Technologies Corp. Automatic parameter loading procedure and system as well as service server and client server

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2683940B2 (en) * 1989-08-09 1997-12-03 信越半導体 株式会社 Automatic work cleaning device
JP3162704B2 (en) * 1990-11-28 2001-05-08 東京エレクトロン株式会社 Processing equipment
US5317778A (en) * 1991-07-31 1994-06-07 Shin-Etsu Handotai Co., Ltd. Automatic cleaning apparatus for wafers
JP2543007B2 (en) * 1993-08-23 1996-10-16 株式会社エンヤシステム Wafer single wafer cleaning device
DE4413077C2 (en) * 1994-04-15 1997-02-06 Steag Micro Tech Gmbh Method and device for chemical treatment of substrates
JP2888412B2 (en) * 1994-07-04 1999-05-10 信越半導体株式会社 Brush cleaning device and work cleaning system
FR2722511B1 (en) * 1994-07-15 1999-04-02 Ontrak Systems Inc PROCESS FOR REMOVING METALS FROM A SCOURING DEVICE
DE19652526C2 (en) * 1996-04-22 2000-12-07 Steag Micro Tech Gmbh Transport device for substrates and method for loading the transport device with substrates

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0002234A2 *

Also Published As

Publication number Publication date
JP2002520132A (en) 2002-07-09
WO2000002234A3 (en) 2000-08-24
DE19830162A1 (en) 2000-01-20
TW439135B (en) 2001-06-07
WO2000002234A2 (en) 2000-01-13
KR20010071759A (en) 2001-07-31

Similar Documents

Publication Publication Date Title
DE69838273T2 (en) Method for cleaning and drying objects to be processed
DE69736378T2 (en) Apparatus and method for cleaning objects to be processed
DE10164192B4 (en) Apparatus and method for processing substrates
EP0755571B1 (en) Process and device for chemically treating substrates
DE60032654T2 (en) Device for cleaning and drying substrates
DE69631566T2 (en) Device and method for washing treatment
DE69839066T2 (en) Device for substrate coating
DE19832038A1 (en) Cleaner and dryer for semiconductor wafers and LED substrates
DE19910391A1 (en) Ultrasonic drying system for removing water from semiconductor wafer surface
DE102004039059B4 (en) Method and apparatus for cleaning semiconductor sub strates
DE10038219A1 (en) Cleaning device and treatment method for preventing oxidation in metal wire coating has a treatment cleaning container, a fluid reservoir to store cleaning fluid, feeder pipes to supply cleaning fluid and return-flow pipes.
DE69736636T2 (en) processing device
EP1101245A2 (en) Method and device for cleaning substrates
DE19781822B4 (en) Cleaning station for use in a system for cleaning, rinsing and drying semiconductor wafers
WO2005006409A1 (en) Device for cleaning wafers after a cmp process
DE19852735B4 (en) Device for drying substrates
DE10118167B4 (en) Apparatus and method for cleaning semiconductor wafers
DE19753471C2 (en) Wafer carrier and / or conveyor device
WO2019145485A1 (en) Method and device for treating etched surfaces of a semiconductor substrate using a ozone-containing medium
EP0570738B1 (en) Method and device for coating hollow bodies
DE10007248A1 (en) Wet chemical cleaning and etching of disc-shaped individual substrates or wafers involves acquiring substrate in holder, rotating and simultaneously spraying with chemical on both sides
DE19859469C2 (en) Device and method for treating substrates
DE10103111A1 (en) Device for treating substrates
DE102008055889A1 (en) Semiconductor wafer i.e. silicon wafer, treating method for producing microelectronic component, involves transporting semiconductor wafer away from output opening of liquid container in transporting direction by transporting device
DE19926462C1 (en) Method and device for treating substrates

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20010205

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: STEAG MICROTECH GMBH

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Withdrawal date: 20020506