WO2000042637A1 - Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements - Google Patents
Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements Download PDFInfo
- Publication number
- WO2000042637A1 WO2000042637A1 PCT/EP1999/000252 EP9900252W WO0042637A1 WO 2000042637 A1 WO2000042637 A1 WO 2000042637A1 EP 9900252 W EP9900252 W EP 9900252W WO 0042637 A1 WO0042637 A1 WO 0042637A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- disc
- shield
- treatment fluid
- nozzle
- treatment
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Definitions
- the invention relates to a method and a device for treating or processing flat substrates, in particular silicon wafers for the production of microelectronic components according to the preamble of claim 1 and claim 6.
- Substrates for electronic components e.g. Silicon wafers, also called wafers, require extremely clean surfaces that require repeated cleaning processes during the manufacture of a chip.
- a method and a device for treating such substrates is already known from US 5,468,302.
- EP 526 245 AI also discloses a device for cleaning silicon wafers. In both devices, the disks are transported and treated in a vertical orientation. It has been found to be disadvantageous that a relatively large amount of treatment fluid is required for cleaning the panes.
- the invention is therefore based on the object of developing a method and a device of the type mentioned at the outset in such a way that disk-shaped substrates can be treated with them without a large amount of treatment fluid being required for this.
- pane in the treatment station is in the immediate vicinity at least one shield aligned parallel to the disc and that a treatment fluid is directed onto the disc between the disc and the shield.
- the object is also achieved by a device which has a treatment station and a receptacle for the disc in a vertical orientation, wherein in the treatment station there is at least one shield aligned parallel to the disc, which is located in the immediate vicinity of the disc and between the disc and a narrow gap is formed in the shield, and that at least one nozzle spraying in a treatment fluid is provided in the gap.
- the plate is rotated with the disc, so that the treatment fluid is also thrown radially outward and removed.
- the drive for the disk and the drive for the shield can be coupled to one another or the two components can have the same drive.
- the treatment fluid is directed vertically or at an angle other than 90 ° onto the surface of the disk.
- the nozzle spraying the treatment fluid can pivoted and / or moved over the surface of the disc. In this way, optimal cleaning of the pane is achieved, in particular if the nozzle is computer-controlled swept over the surface of the substrate in the manner of a scanner.
- the pane is arranged in a narrow gap between two signs.
- both substrate surfaces can be treated at the same time, which on the one hand saves a considerable amount of time and on the other hand limits material stresses in the pane when using hot or hot treatment fluids.
- the shield has, in particular, a spray opening through which the treatment fluid is directed onto the pane.
- the gap between the disc and the shield or between two shields is preferably adjustable. In particular, this can influence the flow of the treatment fluid and set it to optimum values.
- the sign is the same size, smaller or larger than the disc.
- the sign is pot-shaped and the disc is arranged in the pot. In this embodiment, not only the side surface but also the edge of the page is cleaned without the need for separate spray nozzles.
- the shield has guide channels, such as spirals, lamellae, etc., on its surface facing the pane, for guiding the treatment fluid.
- guide channels such as spirals, lamellae, etc.
- These guide channels have the effect that the treatment fluid cannot escape unused, but rather is guided specifically to the substrate surface via the guide channels, so that the cleaning process can take place there.
- the nozzle for the treatment fluid has a large outlet opening.
- the width of the outlet opening can be in the range from 5% to 30% of the diameter of the disk.
- the nozzle is arranged to be movable in the direction of the surface.
- the labels can be removed from one another. This opens the narrow gap so that removal devices can grip and remove the pane.
- the pane is treated with a further fluid by means of a separate nozzle which is inserted between the plates.
- the shield can either be rotated in the same direction or in the opposite direction to the disk, or it can be stationary.
- Figure 3 shows a holding device with displaceably arranged signs
- Figure 4 shows a treatment of the substrate with additional nozzles
- FIG. 5 shows an arrangement with a pot-shaped sign
- FIG. 6 shows an arrangement with a nozzle with a relatively large outlet cross section
- Figure 7 shows an arrangement with a displaceable nozzle.
- FIG. 1 shows a drying station for spin drying, designated overall by 59, in which a disk or a substrate 5 is held at its edge area within the closed drying station 59 by means of a gripper 19, the gripper 19 being able to be rotated via a shaft 54 .
- the drying station 59 consists of two halves 55 and 56 which can be moved apart for loading and unloading.
- the substrate 5 is rotated for drying.
- the centrifugal forces that act on the treatment agents are supported by gravity, which also acts on the water drops that are on the substrate 5.
- a gas-alcohol mixture or a gas-chemical mixture is introduced into the drying station 59, so that there is an alcohol atmosphere or a chemical atmosphere in the drying station 59.
- the water is thrown off the surface of the substrate 5 and sucked off by means of a suction device via an outlet 57. This also reduces the prevailing overpressure.
- two signs 60 and 61 are arranged within the drying station 59, which define a gap 62 between them. Within the gap 62 is the substrate 5, which is at a short distance from both the shield 60 and the shield 61.
- the gas-alcohol mixture is introduced into the drying station 59 via the shaft 54 or 54 ′, specifically between the plate 60 and the substrate 5 and also between the plate 61 and the substrate 5. After emerging from the shaft 54 or 54 ', the treatment fluid hits the surface of the substrate 5 directly and is distributed in the direction of the arrows 63.
- an additional nozzle 65 is inserted between the shield 60 and the substrate 5, so that the surface of the substrate 5 can be cleaned. It is also conceivable to treat the surface of the substrate with an outside nozzle 66. This can be done both before and / or after the drying process.
- the shield 60 is pot-shaped and has an edge 67 overlapping the substrate 5, via which the mixture 58 is passed around the substrate edge. This allows low spin speeds drying can be improved.
- FIG. 6 shows an exemplary embodiment in which the nozzle 68 for introducing the gas / alcohol mixture 58 is designed with a large cross section 69. In this way, the flow rate of the mixture 58 and thereby turbulence in the drying station 59 is reduced.
- FIG. 7 shows an exemplary embodiment in which the nozzle 68 can be moved along the surface of the substrate 5 in the direction of the arrows 70. It is also conceivable to mount the nozzle 68 so that it can pivot, so that the surface of the substrate 5 is sprayed on at different angles.
- Both gases and liquids can be sprayed via the nozzle 68, which is also provided in the shaft 54.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000594139A JP2002535831A (en) | 1999-01-18 | 1999-01-18 | Method and apparatus for processing flat substrates, especially silicone wafers for producing microelectronic components |
AU25183/99A AU2518399A (en) | 1999-01-18 | 1999-01-18 | Method and device for treating tabular substrates, especially silicon wafers forproducing microelectronic elements |
EP99904791A EP1153421A1 (en) | 1999-01-18 | 1999-01-18 | Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements |
KR1020017008992A KR20020018183A (en) | 1999-01-18 | 1999-01-18 | Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements |
PCT/EP1999/000252 WO2000042637A1 (en) | 1999-01-18 | 1999-01-18 | Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP1999/000252 WO2000042637A1 (en) | 1999-01-18 | 1999-01-18 | Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000042637A1 true WO2000042637A1 (en) | 2000-07-20 |
Family
ID=8167191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1999/000252 WO2000042637A1 (en) | 1999-01-18 | 1999-01-18 | Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1153421A1 (en) |
JP (1) | JP2002535831A (en) |
KR (1) | KR20020018183A (en) |
AU (1) | AU2518399A (en) |
WO (1) | WO2000042637A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003017337A1 (en) * | 2001-08-14 | 2003-02-27 | Applied Materials, Inc. | Shield for capturing fluids displaced from a substrate |
US7226514B2 (en) | 1999-04-08 | 2007-06-05 | Applied Materials, Inc. | Spin-rinse-dryer |
US7608152B2 (en) * | 2004-06-14 | 2009-10-27 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6040092B2 (en) | 2013-04-23 | 2016-12-07 | 株式会社荏原製作所 | Substrate plating apparatus and substrate plating method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6281031A (en) * | 1985-10-03 | 1987-04-14 | Sony Corp | Etching device |
US4788994A (en) * | 1986-08-13 | 1988-12-06 | Dainippon Screen Mfg. Co. | Wafer holding mechanism |
JPH02219213A (en) * | 1989-02-20 | 1990-08-31 | Fujitsu Ltd | Resist applying apparatus |
EP0575125A1 (en) * | 1992-06-17 | 1993-12-22 | Santa Barbara Research Center | Method and apparatus for wet chemical processing of semiconductor wafers and other objects |
DE9218974U1 (en) * | 1992-02-11 | 1996-08-22 | Fairchild Convac Gmbh Geraete | Device for applying and / or for partially removing a thin layer on or from a substrate |
WO1997014178A1 (en) * | 1995-10-13 | 1997-04-17 | Ziying Wen | Method and apparatus for chemical processing semiconductor wafers |
-
1999
- 1999-01-18 WO PCT/EP1999/000252 patent/WO2000042637A1/en not_active Application Discontinuation
- 1999-01-18 EP EP99904791A patent/EP1153421A1/en not_active Withdrawn
- 1999-01-18 AU AU25183/99A patent/AU2518399A/en not_active Abandoned
- 1999-01-18 KR KR1020017008992A patent/KR20020018183A/en not_active Application Discontinuation
- 1999-01-18 JP JP2000594139A patent/JP2002535831A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6281031A (en) * | 1985-10-03 | 1987-04-14 | Sony Corp | Etching device |
US4788994A (en) * | 1986-08-13 | 1988-12-06 | Dainippon Screen Mfg. Co. | Wafer holding mechanism |
JPH02219213A (en) * | 1989-02-20 | 1990-08-31 | Fujitsu Ltd | Resist applying apparatus |
DE9218974U1 (en) * | 1992-02-11 | 1996-08-22 | Fairchild Convac Gmbh Geraete | Device for applying and / or for partially removing a thin layer on or from a substrate |
EP0575125A1 (en) * | 1992-06-17 | 1993-12-22 | Santa Barbara Research Center | Method and apparatus for wet chemical processing of semiconductor wafers and other objects |
WO1997014178A1 (en) * | 1995-10-13 | 1997-04-17 | Ziying Wen | Method and apparatus for chemical processing semiconductor wafers |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 011, no. 280 (E - 539) 10 September 1987 (1987-09-10) * |
PATENT ABSTRACTS OF JAPAN vol. 014, no. 520 (E - 1002) 14 November 1990 (1990-11-14) * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7226514B2 (en) | 1999-04-08 | 2007-06-05 | Applied Materials, Inc. | Spin-rinse-dryer |
WO2003017337A1 (en) * | 2001-08-14 | 2003-02-27 | Applied Materials, Inc. | Shield for capturing fluids displaced from a substrate |
US7608152B2 (en) * | 2004-06-14 | 2009-10-27 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
EP1153421A1 (en) | 2001-11-14 |
JP2002535831A (en) | 2002-10-22 |
AU2518399A (en) | 2000-08-01 |
KR20020018183A (en) | 2002-03-07 |
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