JP2002535831A - Method and apparatus for processing flat substrates, especially silicone wafers for producing microelectronic components - Google Patents

Abstract

The present invention relates to a method and an apparatus for processing a flat substrate (5). A substrate (5) is provided in a narrow gap (62) between two plates (60, 61).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD OF THE INVENTION

The invention relates to a method according to the preamble of claim 1 and an apparatus according to the preamble of claim 6 for processing or processing a flat substrate, in particular a silicon wafer for producing microelectronic components.

[0002]

[Prior art]

Substrates for electronic components, such as silicone wafers, also called wafers, require extremely clean surfaces that require repeated cleaning steps during chip fabrication. Methods and apparatus for processing substrates of this type are already disclosed in US Pat. No. 5,468,302.
Is known. EP 526 245 A1 also discloses an apparatus for cleaning silicone wafers. In both systems, wafers are transported and processed in vertical alignment. The disadvantage is that a relatively large amount of processing fluid is required for cleaning the wafer.

[0003]

[Problems to be solved by the invention]

Accordingly, a method and apparatus of the type described in the introductory part of the specification is said to be improved so that a wafer-like substrate can be processed by the method and apparatus, thereby not requiring a large amount of processing fluid. The problem is the basis of the present invention.

[0004]

[Means for Solving the Problems]

The above object is achieved according to the present invention by a method of the type described in the specification introduction,
A wafer is provided in the processing station in the immediate vicinity of at least one plate aligned parallel to the wafer, and between the wafer and the plate;
The problem is solved by introducing a processing fluid to the wafer. Further, the object is an apparatus comprising a processing station and a holding fixture for holding the wafer in a vertical direction, wherein the processing station is provided with at least one plate aligned parallel to the wafer, This plate is in the immediate vicinity of the wafer and is solved by forming a narrow gap between the wafer and the plate and providing at least one nozzle for spraying the processing fluid in the gap.

[0005] By providing the plate in close proximity to the wafer such that there is only a small gap between the plate and the wafer, and by introducing a processing fluid into the gap between the wafer and the plate, Very little processing fluid is consumed,
The processing fluid is optimally utilized for cleaning the surface of the substrate. Because of the narrow gap,
Few processing fluids are lost without being used.

When turbulence is undesirable between the wafer and the plate, ie in the gap, the plate is rotated with the wafer. Therefore, the processing fluid is further centrifuged radially outward and carried away. The drive for the wafer and the drive for the plate may be connected to each other, or the two components may have the same drive.

In a preferred embodiment, the processing fluid is at right angles or at an angle different from 90 °,
Guided to the surface of the wafer. Further, the nozzle spraying the processing fluid can be swirled and / or moved across the surface of the wafer. Thus, optimal cleaning of the wafer is achieved, especially when the nozzles are computer controlled and the surface of the substrate is like a scanner. In a preferred embodiment, the wafer is provided in a narrow gap between the two plates. Thus, both sides of the substrate can be processed simultaneously. This entails, on the one hand, considerable time savings and, on the other hand, limits the distortion in the wafer when using warm or hot processing fluids. In order to spray the processing fluid onto the wafer, the plate has in particular a spray opening. Through this spray opening, the processing fluid is directed to the wafer.

It is preferred that the gap width is adjustable between the wafer and the plate or between the two plates. This has particular influence on the flow of the processing fluid and can be adjusted to an optimum value. Another advantage is found in that the plate is the same size, smaller or larger than the wafer. Advantageously, the plate is formed in the shape of a pot and the wafers are provided in the pot. In this embodiment, not only the surface of the surface but also the edge of the surface is cleaned, so that no special spray nozzle is required.

Embodiments provide that the plate has a guide channel, such as a spiral, a rib, or the like, for guiding the processing fluid on a surface facing the wafer. These guide channels do not leave the processing fluid unused and are guided through the guide channels to the surface of the substrate properly, so that a cleaning step can take place there. Bring.

In order to achieve a discharge rate of the processing fluid, the nozzle for the processing fluid has a large discharge opening. The width of the discharge opening may be in the range of 5% to 30% of the diameter of the wafer. Further, the nozzle is provided movably in the direction of the surface. The plates can be separated from one another so that the wafers can be unloaded without problems and the processed wafers can be placed in the processing equipment. As a result, a narrow gap is opened, so that the unloading device can grip and unload the wafer. Furthermore, it can be provided that the web is treated with another fluid before the removal or before the drying step by means of a separate nozzle inserted between the two plates. The plate may be rotated in the same direction as the wafer or in the opposite direction, or may be stationary.

[0011] Other advantages, features and details of the invention are apparent from the dependent claims and the following description. In this specification, a particularly preferred embodiment will be described with reference to the drawings. In this case, each feature shown in the drawings and set forth in the description and claims,
Alone, or in any combination, may be essential to the invention.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 shows a drying station, generally designated 59, for spin drying. There, the edge area of the wafer or substrate 5 is held by a gripper 19 in a closed drying station 59. In this case, the gripper 19 can be rotated by the shaft 54. The drying station 59 has two halves 5 that can be separated for loading and unloading wafers.
5 and 56. The centrifugal force acting on the treatment agent is assisted by gravity acting on water droplets on the substrate 5 as well. To reduce the surface tension of the water, a gas-alcohol mixture or a gas-chemical mixture is directed to a drying station 59. Therefore, in the drying station 59, an alcohol atmosphere or a chemical atmosphere is dominant. Due to the rotation of the wafer, water is centrifuged from the surface of the substrate 5 and is sucked through the outlet 57 by the suction device. This also reduces the prevailing overpressure.

In order to keep the amount and concentration of the gas-alcohol or gas-chemical mixture introduced to reduce the surface tension of the water on the surface of the substrate 5 to be dried, a drying station 59 comprises: Two plates 60 and 61 are provided, defining a gap 62 between each other. Within the gap 62 is the substrate 5, slightly spaced from the plates 60 and 61. Through the shaft 54 and / or 54 ′, the gas-alcohol mixture is passed to the drying station 59 and
And between the plate 61 and the substrate 5. After exiting the shaft 54 and / or 54 ′, the treatment liquid directly hits the surface of the substrate 5 and is distributed in the direction of the arrow 63. To remove the substrate 5 from the drying station 59, the two halves 55 and 56
Are separated, the arm 64 is retreated to the side, and the substrate is released to be moved forward (
(Fig. 2).

As shown in FIG. 3, the shafts 54 and 54 ′ are moved in the directions of arrows 65 and 65 ′, thereby widening the gap 62, so that after the arm 64 is moved aside, the substrate 5 is similarly moved. It is conceivable to release it.

In the embodiment of FIG. 4, it is shown that an additional nozzle 65 can be inserted between the plate 60 and the substrate 5 to clean the surface of the substrate 5 at least after the plate 60 has moved. ing. It is also conceivable to treat the surface of the substrate with a nozzle 66 provided outside. This may be done before and after the drying step.

In the embodiment of FIG. 5, the plate 60 is formed in the shape of a pan and has an edge 67 that covers the substrate 5. This edge guides the mixture 58 around the edge of the substrate. This improves drying even at low centrifugal rotation speeds.

FIG. 6 shows that a gas-alcohol mixture 58 has been introduced and a nozzle 68 having a large cross section 69 has been formed. Thus, the flow rate of the mixture and thus also the turbulence in the drying station 59 is reduced.

FIG. 7 shows an embodiment in which the nozzle 68 is movable in the direction of arrow 70 along the surface of the substrate 5. It is also conceivable to pivotally mount the nozzle 68 so as to wet the surface of the substrate at various angles. Gases and liquids (collectively referred to as fluids) can be sprayed through nozzles 68 also provided on the shaft 54.

[Brief description of the drawings]

FIG. 1 shows a drying apparatus with a centrifuge chamber in a closed position.

FIG. 2 shows a drying device with a centrifuge chamber in an open position.

FIG. 3 shows a holding device having a movable plate.

FIG. 4 illustrates processing of a substrate by additional nozzles.

FIG. 5 shows a device with a saucer-shaped plate.

FIG. 6 shows an apparatus with a nozzle having a relatively large cross section of discharge.

FIG. 7 shows an apparatus with a movable nozzle.

[Procedural Amendment] Submission of translation of Article 34 Amendment of the Patent Cooperation Treaty

[Submission date] January 30, 2001 (2001.1.130)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Contents of correction]

[Claims]

──────────────────────────────────────────────────続 き Continuation of front page (81) Designated country EP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE ), OA (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG), AP (GH, GM, KE, LS, MW, SD, SZ, UG, ZW), EA (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, HR, HU, ID, IL, IS, JP, KE, KG, KP , KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW

Claims (14)

[Claims] 1. A method of processing a flat substrate (5), in particular a silicone wafer for producing microelectronic components, the flat substrate (5), in particular a silicone wafer, having a substantially flat wafer surface. And wherein the wafers (5) are so aligned and pass through at least one processing station (59), wherein the wafers (5) are positioned within the processing stations (59). Providing in the immediate vicinity of at least one plate (60, 61) aligned parallel to said wafer (5);
A method comprising directing a processing fluid between the wafer (5) and the plate (60, 61) toward the wafer (5). 2. The method according to claim 1, wherein the plate (60, 61) is rotated with the wafer (5). 3. The method according to claim 1, wherein the processing fluid is directed to the surface of the wafer at a right angle or at an angle different from 90 °. 4. The method according to claim 1, wherein the wafer (5) is provided in a narrow gap (62) between two plates (60, 61). 5. A processing fluid is applied to said wafer (5) by said plates (60, 61).
Spraying through a spray opening, in particular through a spray opening.
The method according to any one of the preceding claims. 6. The method according to claim 1, comprising a processing station (59) and a holding fixture (19) for holding the wafer (5) vertically. In the apparatus, the processing station (59) is provided with at least one plate (60, 61) aligned parallel to the wafer (5), the plate being in the immediate vicinity of the wafer (5). Yes, the wafer (5) and the plate (60, 61)
), And provided with at least one nozzle (58) for spraying a processing fluid into said gap. 7. The device according to claim 6, wherein the gap width is adjustable. 8. Apparatus according to claim 6, wherein the plates (60, 61) are of the same size, smaller or larger than the wafer (5). 9. The method according to claim 6, wherein the plate is formed in a pot shape, and the wafer is provided in the pot. An apparatus according to claim 1. 10. The plate (60, 61) has a guide channel, such as a spiral, a rib or the like, for guiding a processing fluid on a surface facing the wafer (5). Apparatus according to any one of claims 6 to 9. 11. Apparatus according to claim 6, wherein the nozzle for processing fluid has a large outlet. 12. The nozzle according to claim 6, wherein the nozzle is pivotable, movable or transportable over the surface of the wafer. An apparatus according to any one of the preceding claims. 13. A plurality of plates (60, 61), characterized in that these plates are separable from each other for removing and placing said wafer (5) from a processing station (59). Apparatus according to any one of claims 6 to 12. 14. The wafer (5), wherein the plate (60, 61) is of a rotary type.
Apparatus according to any one of claims 6 to 13, wherein the apparatus is rotatable in the same direction or in the opposite direction.