US20120145204A1 - Spin Chuck for Thin Wafer Cleaning - Google Patents
Spin Chuck for Thin Wafer Cleaning Download PDFInfo
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- US20120145204A1 US20120145204A1 US12/964,097 US96409710A US2012145204A1 US 20120145204 A1 US20120145204 A1 US 20120145204A1 US 96409710 A US96409710 A US 96409710A US 2012145204 A1 US2012145204 A1 US 2012145204A1
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- shaped plate
- circular shaped
- wafer
- spin chuck
- holding
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- 238000004140 cleaning Methods 0.000 title claims abstract description 36
- 239000000126 substance Substances 0.000 claims description 47
- 239000002904 solvent Substances 0.000 claims description 43
- 239000007921 spray Substances 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000002699 waste material Substances 0.000 claims description 8
- 239000006096 absorbing agent Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000003570 air Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 97
- 238000000034 method Methods 0.000 description 32
- 239000010410 layer Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 21
- 239000002245 particle Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000002313 adhesive film Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000010887 waste solvent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Definitions
- RFID radio frequency identification
- MEMS micro-electro-mechanical systems
- TSV through-silicon via
- an important step is thin wafer cleaning after the semiconductor manufacturing process.
- some residues such as carbon or adhesive films and particles may stay on the surface of the thin wafer. These films and particles may cause surface roughness leading to defects in subsequent fabrication processes, such as a defect in the photolithography process due to the uneven surface of the wafer.
- wet wafer cleaning is commonly employed to remove unwanted residues by spraying various cleaning chemical solvents on a wafer.
- a wafer When a wafer is in this wafer cleaning process, it may be directly placed on a vacuum chuck and then a variety of spray nozzles spray chemical solvents first onto the wafer while the vacuum chuck is spinning. After carbon and adhesive films and particles are dissolved or decomposed, the chemical solvents wash dislodged films and particles away from the wafer. In the last step of the cleaning process, de-ionized water is sprayed while the wafer is spinning to allow complete cleaning.
- a common method of protecting a thin wafer involves using an adhesive layer to temporarily bond the thin wafer on a plate and employing a wafer frame to prevent the thin wafer from moving laterally. As such, it is desirable to clean a thin wafer while the thin wafer is bonded on a tape layer and protected by a wafer frame.
- FIG. 1 is a perspective view of a thin wafer cleaning apparatus
- FIGS. 2A and 2B illustrate a perspective view of a spin chuck for thin wafer cleaning in accordance with an embodiment
- FIGS. 3A and 3B illustrate a top view of the spin chuck illustrated in FIG. 2A and a thin wafer mounted on top of the spin chuck for thin wafer cleaning;
- FIG. 4A illustrates a cross-sectional view of the spin chuck along the line A-A′ shown in FIG. 3A ;
- FIG. 4B illustrates a cross-sectional view of the spin chuck along the line B-B′ shown in FIG. 3B ;
- FIGS. 5A and 5B illustrate a top view of the spin chuck when four holding clamps are unlocked and locked respectively;
- FIGS. 5C and 5D illustrate an enlarged perspective view of a holding clamp when it is unlocked and locked respectively;
- FIG. 6 illustrates a method of preventing carbon films and particles from staying on a tape layer
- FIG. 7A is a perspective view of using a UV lamp to reduce the adhesive strength of a tape layer region
- FIG. 7B is a cross sectional view taken along line C-C′ of FIG. 7A ;
- FIG. 8 illustrates a thin wafer cleaning process in accordance with an embodiment
- FIG. 9A illustrates a perspective view of a chemical solvent nozzle and a waste chemical solvent absorber
- FIGS. 9B and 9C illustrate cross-sectional views of respective portions of the device illustrated in FIG. 9A .
- the present invention will be described with respect to preferred embodiments in a specific context, namely a spin chuck for thin wafer cleaning.
- the invention may also be applied, however, to various wafer cleaning processes.
- FIG. 1 is a perspective view of a thin wafer cleaning apparatus.
- the thin wafer cleaning apparatus includes a cup 100 .
- a spin chuck 120 is placed inside the cup 100 .
- a pipe 104 is attached to the outer wall of the cup 100 .
- the pipe 104 is connected to a spray nozzle 124 located inside the cup 100 by passing through the cup wall.
- pipes 106 and 108 run along the pipe 104 . They are connected to spray nozzles 126 and 128 respectively.
- Three spray nozzles 124 , 126 and 128 are attached to the inner wall of the cup 100 and positioned above the spin chuck 120 .
- the spray nozzle 124 supplies air; the spray nozzle 126 supplies pressurized de-ionized water.
- the spray nozzle 128 functions as a mixing manifold in which de-ionized water and surfactant are pressure-mixed and directed as a dispersed spray when the spray nozzle 128 is turned on.
- the thin wafer cleaning apparatus further includes a chemical solvent nozzle 102 .
- the chemical solvent nozzle 102 is positioned above the spin chuck 120 .
- the chemical solvent nozzle 102 supplies pressurized chemical solvents and nitrogen for thin wafer cleaning. The detailed operation of the chemical solvent nozzle 102 will be described with respect to FIG. 9B .
- a waste chemical absorber 110 is disposed on the spin chuck 120 . The detailed operation of the waste chemical absorber 110 will be shown and described in more detail below with regard to FIG. 9C .
- this thin wafer cleaning apparatus is only illustrative of a single suitable method for applying process liquid and collecting waste liquid during a thin wafer cleaning process. Any other suitable method, such as ultrasonic cleaning, may alternatively be utilized. All of these methods are fully intended to be included within the scope of the present disclosure.
- the spin chuck 120 depicted in FIG. 1 is illustrated in FIG. 2A in a perspective view in accordance with an embodiment.
- the backside of the spin chuck 120 is connected to a rotational drive shaft 210 , which is from a rotation mechanism, such as a motor.
- a rotational drive shaft 210 On the front side of the spin chuck 120 , four holding clamps 214 are disposed equally to surround the wafer (no shown in FIG. 2A but illustrated in FIG. 2B ).
- the holding clamps 214 can be locked by rotating them by 180 degrees.
- a thin wafer 200 is mounted on the front side of spin chuck 120 through a tape layer 202 .
- the diameter of the thin wafer 200 is about 300 mm.
- the diameter of the tape layer 202 is larger than the diameter of the thin wafer 200 .
- the thin wafer 200 is placed in the middle of the tape layer 202 .
- the thin wafer 200 and the tape layer 202 form a donut-shaped area, in which the thin wafer 200 occupies the cavity of the donut-shaped area.
- a wafer frame 204 is donut-shaped having an outer diameter of approximately 400 mm and an inside diameter slightly less than the diameter of the tape layer 202 .
- the wafer frame 204 is placed on the outer periphery of the tape layer 202 .
- the holding clamps 214 are spaced uniformly around the edge of the wafer frame 204 so as to horizontally hold the wafer frame 204 when they are locked. The operation of the holding clamps 214 will be described in further detail with respect to FIGS. 5A-5D .
- FIG. 2A illustrates the spin chuck 120 with four holding clamps uniformly spaced around the edge of the wafer frame 204
- the spin chuck 120 could accommodate any number of holding clamps.
- a plurality of holding clamps may be spaced non-uniformly around the edge of the wafer frame 204 .
- the number of holding clamps and uniform spacing illustrated herein are limited solely for the purpose of clearly illustrating the inventive aspects of the various embodiments.
- the present invention is not limited to any specific number of holding clamps and uniform spacing.
- FIG. 3A illustrates a top view of the spin chuck 120 for thin wafer cleaning.
- the spin chuck's top surface includes a circular area having four half oval shaped extensions, which are uniformly spaced along the edge of the circle area.
- the holding clamp 214 is mounted on each oval shaped extension so that four evenly spaced holding clamps can firmly hold the wafer frame 204 when they are locked.
- FIG. 3B illustrates a top view of the thin wafer 200 mounted on the spin chuck 120 .
- the tape layer 202 is brought into contact with both the spin chuck 120 and the thin wafer 200 so as to prevent the thin wafer 200 from moving vertically.
- the wafer frame 204 is mounted on the outer periphery of the tape layer 202 so that four holding clamps 214 can hold the wafer frame 204 when they are locked and then prevent the thin wafer 200 from dropping out from the spin chuck due to the centrifugal force when the spin chuck 120 rotates at a high speed.
- FIG. 4A illustrates a cross-sectional view of the spin chuck 120 along the line A-A′ shown in FIG. 3A .
- the backside of the spin chuck 120 is connected to the rotational drive shaft 210 .
- the scale of the holding clamps 214 is exaggerated here to illustrate their geometry.
- the holding clamp 214 has two portions. The upper portion has a right trapezoidal shape. The bottom portion has a rectangular shape. It should be noted that the shapes of the upper and bottom portions are selected purely for demonstration purposes and are not intended to limit the various embodiments. One of ordinary skill in the art would recognize many variations, alternatives and modifications. As shown in FIG.
- the wafer frame 214 when the holding clamps 214 are unlocked, that is, the acute triangle of the upper portion is turned to the outer edge of the spin chuck 120 , the wafer frame 214 can be placed on the tape layer 204 because the outer diameter of the wafer frame 204 is slightly less than the distance between two unlocked holding clamps 214 .
- FIG. 4B after the wafer frame 204 is mounted on top of the tape layer 202 , there is a small gap between the outer edge of the wafer frame 204 and the holding clamps 214 .
- FIG. 5A illustrates a top view of the spin chuck 120 when four holding clamps 214 are unlocked.
- the detailed description of the spin chuck 120 and the thin wafer 200 placed on the top of the spin chuck 120 has been discussed with respect to FIG. 3B .
- a dashed circle is added in FIG. 5A to highlight the holding clamp 214 is unlocked.
- FIG. 5C is an enlarged perspective view of the holding clamp 214 and the wafer frame 204 shown in the dashed circle. As shown in FIG. 5C , before the holding clamp 214 is locked, there is a small gap between the outer edge of the wafer frame 204 and the edge of the holding clamp 214 .
- the gaps between four holding clamps 214 and the wafer frame 204 guarantee there is no interference with the removal and placement of the wafer frame 204 .
- FIG. 5B illustrates a top view of the spin chuck 120 when four holding clamps 214 are locked.
- the area in dashed circle is enlarged in FIG. 5D .
- the holding clamp 214 can be turned in the horizontal plane substantially through 180 degrees from an unlocked position to a locked position.
- the bottom portion of the holding clamps is brought into contact with the edge of the wafer frame so as to prevent lateral movement of the wafer frame 204 .
- the upper portion of the holding clamp 214 is half-cup shaped.
- the U-shaped top of the upper portion is bigger than the top of the bottom portion. This is helpful to prevent the wafer frame 204 from moving vertically.
- FIG. 6 illustrates a method of preventing carbon films and particles from staying on the tape layer 202 .
- the tape layer 202 is placed underneath the thin wafer 200 and the wafer frame 204 is placed on the outer periphery of the tape layer 202 .
- a region 602 is used to represent the tape layer region located within the gap.
- the surface of the region 602 is lower than the surface of the thin wafer 200 .
- the manufacture defect can be resolved by applying a two-step cleaning method shown in FIG. 6 .
- an ultraviolet lamp is used to reduce the adhesive strength of the region 602 .
- an ultraviolet lamp 604 is located above the region 602 .
- the region 602 is exposed to ultraviolet cure, which can reduce the adhesive strength of the region 602 to near zero.
- a chemical solvent such as Isopropyl Alcohol (IPA), acetone, alcohol or hydrocarbon mixture or the like, is sprayed on top of the region 602 .
- IPA Isopropyl Alcohol
- acetone acetone
- the residues flowing down from the thin wafer 200 may not stay on the region 602 because the adhesive material on top of the region 602 has been washed away.
- An advantageous feature of this tape adhesive removal method is that the non-adhesive surface between the thin wafer 200 and the wafer clamp 204 provides a drainage channel for residues and chemical solvents in the subsequent wafer cleaning processes.
- FIG. 7A is a perspective view of an adhesive removal process.
- the ultraviolet lamp 604 is placed above the region 602 and covers a portion of the region 602 .
- the spin chuck 120 rotates, different areas of the region 602 periodically exposed to ultraviolet light until the adhesive strength of the region 602 is reduced to near zero.
- FIG. 7B is a cross-sectional view of the ultraviolet lamp along line C-C′.
- the ultraviolet lamp 604 may be positioned within the wafer cleaning cup 100 .
- the ultraviolet lamp 604 can have an ultraviolet output power in the range between 10 mJ/cm 2 to 200 mJ/cm 2 .
- the ultraviolet lamp 604 having this wavelength radiation range can reduce the adhesive strength of the surface of the region 602 .
- the adhesive material on top of the tape layer 202 can be washed away by spraying chemical solvents onto the surface of the region 602 .
- the region 602 may become a non-adhesive drainage channel for the subsequent wafer cleaning processes.
- FIG. 8 illustrates a thin wafer cleaning process in accordance with an embodiment.
- the major residues on a thin wafer may include carbon and adhesive films and particles.
- the thin wafer cleaning process may include three steps. The first step is the removal of carbon films and particles. The second step is the removal of adhesive films and particles left on the wafer. These two removals can be accomplished by spraying chemical solvents through the chemical solvent nozzle 102 . After these two removal processes, the thin wafer 200 goes through a final cleaning process.
- the thin wafer 200 is mounted on top of the tape layer 202 , which prevents the thin wafer 200 from moving vertically or horizontally. In addition, holding clamps 214 in locked positions further prevent the thin wafer 200 from dropping off the spin chuck 120 due to the centrifugal force.
- the chemical solvent nozzle 102 is positioned above the thin wafer 200 , substantially on an axis 810 .
- the cleaning solvents are pressurized within a mixing manifold (not shown but illustrated in FIG. 9B ) with nitrogen and sprayed on the thin wafer 200 through the chemical solvent nozzle 102 .
- the chemical solvents may be atomized and then fed into the chemical solvent nozzle.
- the chemical solvent nozzle 102 sprays the atomized chemical solvents onto the thin wafer.
- the spin chuck 120 spins about the axis 810 to spread the chemical solvents over the thin wafer 200 .
- the spin speed of the spin chuck 120 is between 500 and 1000 rpm, with a maximum speed of approximately 2000 rpm.
- the chemical solvent nozzle 102 sprays pressurized chemical solvents again to remove the adhesive films and particles on top of the thin wafer.
- the chemical solvents are fed into a heater and heated up to a temperature in the range between 25° C. to 100° C. and then pressurized in the mixing manifold with nitrogen. Then the chemical solvent nozzle 102 sprays the heated and pressurized chemical solvents onto the thin wafer 200 .
- chemical solvents can be fed into an ultrasonic vibration apparatus (not shown) and become ultrasonic vibration chemical solvents and then pressure-fed into a mixing manifold (not shown but illustrated in FIG. 9B ) within the chemical solvent nozzle 102 .
- the chemical solvent nozzle 102 sprays the ultrasonic vibration chemical solvents onto the thin wafer 200 .
- the high-frequency sound waves from the ultrasonic vibration apparatus can dislodge the adhesive films and particles.
- the chemical solvents are good medium through which the dislodged films and particles are flowed down into a waste drain (not shown but illustrated in FIG. 9C ).
- the final cleaning process involves three nozzles attached on the inner wall of the cup.
- three spray nozzles 124 , 126 and 128 are attached to the inner wall of the cup 100 and positioned above the spin chuck 120 .
- the spray nozzle 124 supplies air;
- the spray nozzle 126 supplies de-ionized water.
- the spray nozzle 128 functions as a mixing manifold in which DI water and surfactant are pressure-mixed and directed as a dispersed spray when the spray nozzle 128 is turned on.
- the final cleaning process may involve the spray nozzle 124 , the spray nozzle 126 , the spray nozzle 128 or any combination thereof.
- the spin chuck 120 rotates past the stationary spray nozzle 126 .
- De-ionized water is sprayed on the spinning wafer through the spray nozzle 126 .
- the spin chuck 120 spins about the axis 810 to spread de-ionized water over the wafer.
- FIG. 9A illustrates a perspective view of the chemical solvent nozzle 102 and the waste chemical solvent absorber 110 .
- a mixing manifold is located within the chemical solvent nozzle 102 and positioned above the thin wafer.
- FIG. 9B is an enlarged view of the mixing manifold.
- the mixing manifold includes one mixing channel 902 and two pipes.
- a first pipe 904 supplies chemical solvents.
- a second pipe 906 supplies nitrogen.
- At the end of the pipe 906 it has two outlets.
- One nitrogen outlet is positioned at the right side of the outlet of the pipe 904 and another nitrogen outlet is positioned at the left side of the outlet of the pipe 904 .
- High pressured nitrogen and chemical solvents are fed into the mixing channel 902 and then directed as a dispersed spray onto the thin wafer 200 .
- FIG. 9C is an enlarged perspective view of the waste chemical absorber 110 . It is placed on top of the tape layer 202 . It has an opening through which waste chemical solvents are absorbed and then flow down into a waste drain 908 as shown in FIG. 9A .
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Abstract
Description
- Emerging applications, such as radio frequency identification (RFID) integrated circuits, high density memory devices have an increasing demand for thin semiconductor devices. Thin semiconductor devices, and the like, enable more sophisticated manufacturing technologies, including micro-electro-mechanical systems (MEMS), through-silicon via (TSV) and novel 3D packaging technologies.
- In the manufacturing process of thin semiconductor devices, an important step is thin wafer cleaning after the semiconductor manufacturing process. For example, after a chemical-mechanical polishing process, some residues such as carbon or adhesive films and particles may stay on the surface of the thin wafer. These films and particles may cause surface roughness leading to defects in subsequent fabrication processes, such as a defect in the photolithography process due to the uneven surface of the wafer.
- In the conventional art, wet wafer cleaning is commonly employed to remove unwanted residues by spraying various cleaning chemical solvents on a wafer. When a wafer is in this wafer cleaning process, it may be directly placed on a vacuum chuck and then a variety of spray nozzles spray chemical solvents first onto the wafer while the vacuum chuck is spinning. After carbon and adhesive films and particles are dissolved or decomposed, the chemical solvents wash dislodged films and particles away from the wafer. In the last step of the cleaning process, de-ionized water is sprayed while the wafer is spinning to allow complete cleaning.
- However, thin wafers are fragile and must be supported over their full dimensions to prevent unnecessary damage. A common method of protecting a thin wafer involves using an adhesive layer to temporarily bond the thin wafer on a plate and employing a wafer frame to prevent the thin wafer from moving laterally. As such, it is desirable to clean a thin wafer while the thin wafer is bonded on a tape layer and protected by a wafer frame.
- For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a perspective view of a thin wafer cleaning apparatus; -
FIGS. 2A and 2B illustrate a perspective view of a spin chuck for thin wafer cleaning in accordance with an embodiment; -
FIGS. 3A and 3B illustrate a top view of the spin chuck illustrated inFIG. 2A and a thin wafer mounted on top of the spin chuck for thin wafer cleaning; -
FIG. 4A illustrates a cross-sectional view of the spin chuck along the line A-A′ shown inFIG. 3A ; -
FIG. 4B illustrates a cross-sectional view of the spin chuck along the line B-B′ shown inFIG. 3B ; -
FIGS. 5A and 5B illustrate a top view of the spin chuck when four holding clamps are unlocked and locked respectively; -
FIGS. 5C and 5D illustrate an enlarged perspective view of a holding clamp when it is unlocked and locked respectively; -
FIG. 6 illustrates a method of preventing carbon films and particles from staying on a tape layer; -
FIG. 7A is a perspective view of using a UV lamp to reduce the adhesive strength of a tape layer region; -
FIG. 7B is a cross sectional view taken along line C-C′ ofFIG. 7A ; -
FIG. 8 illustrates a thin wafer cleaning process in accordance with an embodiment; -
FIG. 9A illustrates a perspective view of a chemical solvent nozzle and a waste chemical solvent absorber; and -
FIGS. 9B and 9C illustrate cross-sectional views of respective portions of the device illustrated inFIG. 9A . - Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the various embodiments and are not necessarily drawn to scale.
- The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.
- The present invention will be described with respect to preferred embodiments in a specific context, namely a spin chuck for thin wafer cleaning. The invention may also be applied, however, to various wafer cleaning processes.
- Referring initially to
FIG. 1 ,FIG. 1 is a perspective view of a thin wafer cleaning apparatus. The thin wafer cleaning apparatus includes acup 100. Aspin chuck 120 is placed inside thecup 100. Apipe 104 is attached to the outer wall of thecup 100. Thepipe 104 is connected to aspray nozzle 124 located inside thecup 100 by passing through the cup wall. Likewise,pipes 106 and 108 run along thepipe 104. They are connected tospray nozzles spray nozzles cup 100 and positioned above thespin chuck 120. - In an embodiment, the
spray nozzle 124 supplies air; thespray nozzle 126 supplies pressurized de-ionized water. Thespray nozzle 128 functions as a mixing manifold in which de-ionized water and surfactant are pressure-mixed and directed as a dispersed spray when thespray nozzle 128 is turned on. The thin wafer cleaning apparatus further includes achemical solvent nozzle 102. Thechemical solvent nozzle 102 is positioned above thespin chuck 120. In an embodiment, thechemical solvent nozzle 102 supplies pressurized chemical solvents and nitrogen for thin wafer cleaning. The detailed operation of thechemical solvent nozzle 102 will be described with respect toFIG. 9B . Awaste chemical absorber 110 is disposed on thespin chuck 120. The detailed operation of thewaste chemical absorber 110 will be shown and described in more detail below with regard toFIG. 9C . - However, as one of ordinary skill in the art will recognize, this thin wafer cleaning apparatus is only illustrative of a single suitable method for applying process liquid and collecting waste liquid during a thin wafer cleaning process. Any other suitable method, such as ultrasonic cleaning, may alternatively be utilized. All of these methods are fully intended to be included within the scope of the present disclosure.
- The
spin chuck 120 depicted inFIG. 1 is illustrated inFIG. 2A in a perspective view in accordance with an embodiment. The backside of thespin chuck 120 is connected to arotational drive shaft 210, which is from a rotation mechanism, such as a motor. On the front side of thespin chuck 120, four holdingclamps 214 are disposed equally to surround the wafer (no shown inFIG. 2A but illustrated inFIG. 2B ). The holding clamps 214 can be locked by rotating them by 180 degrees. As illustrated inFIG. 2B , athin wafer 200 is mounted on the front side ofspin chuck 120 through atape layer 202. According to an embodiment, the diameter of thethin wafer 200 is about 300 mm. The diameter of thetape layer 202 is larger than the diameter of thethin wafer 200. Thethin wafer 200 is placed in the middle of thetape layer 202. Thethin wafer 200 and thetape layer 202 form a donut-shaped area, in which thethin wafer 200 occupies the cavity of the donut-shaped area. - A
wafer frame 204 is donut-shaped having an outer diameter of approximately 400 mm and an inside diameter slightly less than the diameter of thetape layer 202. Thewafer frame 204 is placed on the outer periphery of thetape layer 202. The holding clamps 214 are spaced uniformly around the edge of thewafer frame 204 so as to horizontally hold thewafer frame 204 when they are locked. The operation of the holding clamps 214 will be described in further detail with respect toFIGS. 5A-5D . - It should be recognized that while
FIG. 2A illustrates thespin chuck 120 with four holding clamps uniformly spaced around the edge of thewafer frame 204, thespin chuck 120 could accommodate any number of holding clamps. Furthermore, a plurality of holding clamps may be spaced non-uniformly around the edge of thewafer frame 204. The number of holding clamps and uniform spacing illustrated herein are limited solely for the purpose of clearly illustrating the inventive aspects of the various embodiments. The present invention is not limited to any specific number of holding clamps and uniform spacing. -
FIG. 3A illustrates a top view of thespin chuck 120 for thin wafer cleaning. The spin chuck's top surface includes a circular area having four half oval shaped extensions, which are uniformly spaced along the edge of the circle area. The holdingclamp 214 is mounted on each oval shaped extension so that four evenly spaced holding clamps can firmly hold thewafer frame 204 when they are locked.FIG. 3B illustrates a top view of thethin wafer 200 mounted on thespin chuck 120. Thetape layer 202 is brought into contact with both thespin chuck 120 and thethin wafer 200 so as to prevent thethin wafer 200 from moving vertically. Thewafer frame 204 is mounted on the outer periphery of thetape layer 202 so that four holdingclamps 214 can hold thewafer frame 204 when they are locked and then prevent thethin wafer 200 from dropping out from the spin chuck due to the centrifugal force when thespin chuck 120 rotates at a high speed. -
FIG. 4A illustrates a cross-sectional view of thespin chuck 120 along the line A-A′ shown inFIG. 3A . As described with respect toFIG. 2A , the backside of thespin chuck 120 is connected to therotational drive shaft 210. The scale of the holding clamps 214 is exaggerated here to illustrate their geometry. The holdingclamp 214 has two portions. The upper portion has a right trapezoidal shape. The bottom portion has a rectangular shape. It should be noted that the shapes of the upper and bottom portions are selected purely for demonstration purposes and are not intended to limit the various embodiments. One of ordinary skill in the art would recognize many variations, alternatives and modifications. As shown inFIG. 4B , when the holding clamps 214 are unlocked, that is, the acute triangle of the upper portion is turned to the outer edge of thespin chuck 120, thewafer frame 214 can be placed on thetape layer 204 because the outer diameter of thewafer frame 204 is slightly less than the distance between two unlocked holding clamps 214. InFIG. 4B , after thewafer frame 204 is mounted on top of thetape layer 202, there is a small gap between the outer edge of thewafer frame 204 and the holding clamps 214. -
FIG. 5A illustrates a top view of thespin chuck 120 when four holdingclamps 214 are unlocked. The detailed description of thespin chuck 120 and thethin wafer 200 placed on the top of thespin chuck 120 has been discussed with respect toFIG. 3B . A dashed circle is added inFIG. 5A to highlight the holdingclamp 214 is unlocked.FIG. 5C is an enlarged perspective view of the holdingclamp 214 and thewafer frame 204 shown in the dashed circle. As shown inFIG. 5C , before the holdingclamp 214 is locked, there is a small gap between the outer edge of thewafer frame 204 and the edge of the holdingclamp 214. The gaps between four holdingclamps 214 and thewafer frame 204 guarantee there is no interference with the removal and placement of thewafer frame 204. -
FIG. 5B illustrates a top view of thespin chuck 120 when four holdingclamps 214 are locked. The area in dashed circle is enlarged inFIG. 5D . The holdingclamp 214 can be turned in the horizontal plane substantially through 180 degrees from an unlocked position to a locked position. As shown inFIG. 5D , the bottom portion of the holding clamps is brought into contact with the edge of the wafer frame so as to prevent lateral movement of thewafer frame 204. Likewise, the upper portion of the holdingclamp 214 is half-cup shaped. The U-shaped top of the upper portion is bigger than the top of the bottom portion. This is helpful to prevent thewafer frame 204 from moving vertically. -
FIG. 6 illustrates a method of preventing carbon films and particles from staying on thetape layer 202. As described above with respect toFIG. 2B , thetape layer 202 is placed underneath thethin wafer 200 and thewafer frame 204 is placed on the outer periphery of thetape layer 202. As shown inFIG. 6 , there is a gap between the outer edge of thethin wafer 200 and the inner edge of thewafer frame 204. InFIG. 6 , aregion 602 is used to represent the tape layer region located within the gap. As shown inFIG. 6 , the surface of theregion 602 is lower than the surface of thethin wafer 200. During a cleaning process, all residues on top of thethin wafer 200 may flow down into theregion 602 of thetape layer 202. The adhesive characteristic of thetape layer 202 may cause some residues staying on thetape layer 202. As a result, it causes a manufacture defect. - The manufacture defect can be resolved by applying a two-step cleaning method shown in
FIG. 6 . First, an ultraviolet lamp is used to reduce the adhesive strength of theregion 602. As shown inFIG. 6 , anultraviolet lamp 604 is located above theregion 602. When thespin chuck 120 rotates, theregion 602 is exposed to ultraviolet cure, which can reduce the adhesive strength of theregion 602 to near zero. Subsequently, a chemical solvent, such as Isopropyl Alcohol (IPA), acetone, alcohol or hydrocarbon mixture or the like, is sprayed on top of theregion 602. The chemical solvent can remove adhesive from theregion 602. As a result, thearea 602 is free from adhesive. In the subsequent wafer cleaning processing, the residues flowing down from thethin wafer 200 may not stay on theregion 602 because the adhesive material on top of theregion 602 has been washed away. An advantageous feature of this tape adhesive removal method is that the non-adhesive surface between thethin wafer 200 and thewafer clamp 204 provides a drainage channel for residues and chemical solvents in the subsequent wafer cleaning processes. -
FIG. 7A is a perspective view of an adhesive removal process. Theultraviolet lamp 604 is placed above theregion 602 and covers a portion of theregion 602. When thespin chuck 120 rotates, different areas of theregion 602 periodically exposed to ultraviolet light until the adhesive strength of theregion 602 is reduced to near zero. -
FIG. 7B is a cross-sectional view of the ultraviolet lamp along line C-C′. In accordance with an embodiment, theultraviolet lamp 604 may be positioned within thewafer cleaning cup 100. Theultraviolet lamp 604 can have an ultraviolet output power in the range between 10 mJ/cm2 to 200 mJ/cm2. Theultraviolet lamp 604 having this wavelength radiation range can reduce the adhesive strength of the surface of theregion 602. As described above, the adhesive material on top of thetape layer 202 can be washed away by spraying chemical solvents onto the surface of theregion 602. Theregion 602 may become a non-adhesive drainage channel for the subsequent wafer cleaning processes. -
FIG. 8 illustrates a thin wafer cleaning process in accordance with an embodiment. The major residues on a thin wafer may include carbon and adhesive films and particles. In order to remove these films and particles, in accordance with an embodiment, the thin wafer cleaning process may include three steps. The first step is the removal of carbon films and particles. The second step is the removal of adhesive films and particles left on the wafer. These two removals can be accomplished by spraying chemical solvents through the chemicalsolvent nozzle 102. After these two removal processes, thethin wafer 200 goes through a final cleaning process. - As shown in
FIG. 8 , thethin wafer 200 is mounted on top of thetape layer 202, which prevents thethin wafer 200 from moving vertically or horizontally. In addition, holdingclamps 214 in locked positions further prevent thethin wafer 200 from dropping off thespin chuck 120 due to the centrifugal force. The chemicalsolvent nozzle 102 is positioned above thethin wafer 200, substantially on anaxis 810. The cleaning solvents are pressurized within a mixing manifold (not shown but illustrated inFIG. 9B ) with nitrogen and sprayed on thethin wafer 200 through the chemicalsolvent nozzle 102. Alternatively, the chemical solvents may be atomized and then fed into the chemical solvent nozzle. Then, the chemicalsolvent nozzle 102 sprays the atomized chemical solvents onto the thin wafer. Thespin chuck 120 spins about theaxis 810 to spread the chemical solvents over thethin wafer 200. In accordance with an embodiment, the spin speed of thespin chuck 120 is between 500 and 1000 rpm, with a maximum speed of approximately 2000 rpm. - After removing carbon films and particles from the thin wafer, the chemical
solvent nozzle 102 sprays pressurized chemical solvents again to remove the adhesive films and particles on top of the thin wafer. In order to effectively remove the adhesive materials, the chemical solvents are fed into a heater and heated up to a temperature in the range between 25° C. to 100° C. and then pressurized in the mixing manifold with nitrogen. Then the chemicalsolvent nozzle 102 sprays the heated and pressurized chemical solvents onto thethin wafer 200. Alternatively, chemical solvents can be fed into an ultrasonic vibration apparatus (not shown) and become ultrasonic vibration chemical solvents and then pressure-fed into a mixing manifold (not shown but illustrated inFIG. 9B ) within the chemicalsolvent nozzle 102. The chemicalsolvent nozzle 102 sprays the ultrasonic vibration chemical solvents onto thethin wafer 200. The high-frequency sound waves from the ultrasonic vibration apparatus can dislodge the adhesive films and particles. The chemical solvents are good medium through which the dislodged films and particles are flowed down into a waste drain (not shown but illustrated inFIG. 9C ). - The final cleaning process involves three nozzles attached on the inner wall of the cup. As described with respect to
FIG. 1 , threespray nozzles cup 100 and positioned above thespin chuck 120. In an embodiment, thespray nozzle 124 supplies air; thespray nozzle 126 supplies de-ionized water. Thespray nozzle 128 functions as a mixing manifold in which DI water and surfactant are pressure-mixed and directed as a dispersed spray when thespray nozzle 128 is turned on. - In accordance with various embodiments, the final cleaning process may involve the
spray nozzle 124, thespray nozzle 126, thespray nozzle 128 or any combination thereof. In an embodiment, thespin chuck 120 rotates past thestationary spray nozzle 126. De-ionized water is sprayed on the spinning wafer through thespray nozzle 126. Thespin chuck 120 spins about theaxis 810 to spread de-ionized water over the wafer. -
FIG. 9A illustrates a perspective view of the chemicalsolvent nozzle 102 and the wastechemical solvent absorber 110. A mixing manifold is located within the chemicalsolvent nozzle 102 and positioned above the thin wafer.FIG. 9B is an enlarged view of the mixing manifold. The mixing manifold includes onemixing channel 902 and two pipes. In accordance with an embodiment, afirst pipe 904 supplies chemical solvents. Asecond pipe 906 supplies nitrogen. At the end of thepipe 906, it has two outlets. One nitrogen outlet is positioned at the right side of the outlet of thepipe 904 and another nitrogen outlet is positioned at the left side of the outlet of thepipe 904. High pressured nitrogen and chemical solvents are fed into the mixingchannel 902 and then directed as a dispersed spray onto thethin wafer 200. -
FIG. 9C is an enlarged perspective view of thewaste chemical absorber 110. It is placed on top of thetape layer 202. It has an opening through which waste chemical solvents are absorbed and then flow down into awaste drain 908 as shown inFIG. 9A . - Although embodiments of the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
- Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (20)
Priority Applications (3)
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US12/964,097 US9153462B2 (en) | 2010-12-09 | 2010-12-09 | Spin chuck for thin wafer cleaning |
TW100141389A TWI507254B (en) | 2010-12-09 | 2011-11-14 | Device and system for thin wafer cleaning |
CN201110397985.2A CN102569128B (en) | 2010-12-09 | 2011-11-30 | For the spin chuck of clean thin wafer |
Applications Claiming Priority (1)
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US12/964,097 US9153462B2 (en) | 2010-12-09 | 2010-12-09 | Spin chuck for thin wafer cleaning |
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US20120145204A1 true US20120145204A1 (en) | 2012-06-14 |
US9153462B2 US9153462B2 (en) | 2015-10-06 |
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US12/964,097 Expired - Fee Related US9153462B2 (en) | 2010-12-09 | 2010-12-09 | Spin chuck for thin wafer cleaning |
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CN (1) | CN102569128B (en) |
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Also Published As
Publication number | Publication date |
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US9153462B2 (en) | 2015-10-06 |
CN102569128A (en) | 2012-07-11 |
TWI507254B (en) | 2015-11-11 |
TW201249553A (en) | 2012-12-16 |
CN102569128B (en) | 2016-04-27 |
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