DE19730582A1 - Photolithographic processing of microelectronic components - Google Patents
Photolithographic processing of microelectronic componentsInfo
- Publication number
- DE19730582A1 DE19730582A1 DE1997130582 DE19730582A DE19730582A1 DE 19730582 A1 DE19730582 A1 DE 19730582A1 DE 1997130582 DE1997130582 DE 1997130582 DE 19730582 A DE19730582 A DE 19730582A DE 19730582 A1 DE19730582 A1 DE 19730582A1
- Authority
- DE
- Germany
- Prior art keywords
- stations
- discs
- station
- silicon wafer
- microelectronic components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Bearbeitung von Wafer zum Herstellen mikroelektronischer Bauelemente im photolithographischen Verfahren.The invention relates to a method and a device for processing wafers for manufacturing microelectronic components in photolithographic Method.
Die Herstellung von mikroelektronischen Bauelementen, die allgemein auch Chips genannt werden, auf z. B. runden Silizium-Scheiben erfolgt durch Verwendung photolithographischer Prozesse, indem die Strukturen auf der Substratoberfläche aufgebrachte photosensible Lacke durch Masken belichtet werden. Die photosensible Lackschicht (Photoresist) wird dabei in horizontaler Lage auf das Substrat aufgeschleudert, wobei auch die nachfolgenden Prozesse wie Trocknen der Lackschicht, Belichten, Entwickeln, Ätzen usw., Aufbringen von Haftvermittlern vor Aufbringung der Lackschicht, ausschließlich in horizontaler Substratposition erfolgen. Das Handling zwischen den einzelnen Bearbeitungsschritten erfolgt durch aufwendige reinraumtaugliche Handlingroboter.The manufacture of microelectronic components that are also commonly called chips on z. B. round Silicon wafers are made using photolithographic processes by the structures on photosensitive coatings applied to the substrate surface exposed through masks. The photosensitive Lacquer layer (photoresist) is in a horizontal position hurled onto the substrate, the subsequent processes such as drying the paint layer, Exposing, developing, etching, etc., applying Adhesion promoters before application of the lacquer layer, only in the horizontal substrate position. The handling between the individual processing steps is done by complex handling robots suitable for clean rooms.
Als Nachteil wird dabei angesehen, daß durch größer werdende Substrate, z. B. 300 mm Durchmesser, die Anlagen bei horizontaler Substratbearbeitung sehr groß werden. Die Reinraumfläche für die Aufstellung der Anlage ist relativ teuer und die Kontamination der Substrate mit Schmutzteilen ist bei horizontaler Substratbearbeitung sehr groß. Allein durch die aufprallende laminar geführte Reinraumluft, welche Restpartikel enthält, werden die Silizium-Scheiben erheblich kontaminiert. Außerdem werden beim Aufprallen auf eine Substratoberfläche Turbulenzen verursacht, die zu zusätzlicher Partikelkontamination führen.It is considered a disadvantage that larger expecting substrates, e.g. B. 300 mm diameter, the systems become very large with horizontal substrate processing. The Clean room space for the installation of the system is relative expensive and contamination of the substrates with dirt is very large for horizontal substrate processing. Alone through the impacting laminar-guided clean room air, the silicon wafers are the ones that contain residual particles significantly contaminated. Also, when bouncing on a substrate surface causes turbulence that too lead to additional particle contamination.
Diese Probleme werden vorteilhaft bei einem Verfahren der eingangs genannten Art dadurch vermieden, daß die Silizium-Scheiben in vertikaler Ausrichtung durch die einzelnen Stationen der photolithographischen Bearbeitungsanlage geführt werden. These problems become advantageous in a method of avoided at the outset in that the Silicon wafers in a vertical orientation through the individual stations of the photolithographic Machining system can be performed.
Durch die vertikale Ausrichtung der Silizium-Scheiben wird der wesentliche Vorteil erzielt, daß die Anlage wesentlich einfacher an sich ändernde Abmessungen der Scheiben anpaßbar ist und wesentlich weniger Reinraumfläche benötigt wird. Außerdem prallen wesentlich weniger Restschmutzpartikel auf die Substratoberfläche auf, so daß die Kontamination ebenfalls verringert ist.Due to the vertical alignment of the silicon wafers The main advantage is that the system is essential easier on changing dimensions of the discs is adaptable and significantly less clean room area is needed. In addition, much less bounce Residual dirt particles on the substrate surface, so that contamination is also reduced.
Mit Vorzug werden die Silizium-Scheiben über Handlingroboter transportiert. Dabei werden die Scheiben an ihren Rändern ergriffen, wofür z. B. konische Ausnehmungen an den Robotern dienen.The silicon wafers are preferably over Handling robot transported. The discs are on gripped their edges, for what z. B. conical recesses serve on the robots.
Bei einem alternativen Verfahren ist vorgesehen, daß die Silizium-Scheiben die einzelnen Stationen durch Schwerkraft durchlaufen, insbesondere durchrollen. Dies hat den wesentlichen Vorteil, daß keine Handlingroboter benötigt werden, wodurch die Anlage relativ preiswert wird.An alternative method provides that the Silicon slices the individual stations by gravity go through, especially roll through. This has the significant advantage that no handling robot is required be, which makes the system relatively inexpensive.
Die eingangs genannte Aufgabe wird außerdem mit einem Verfahren gelöst, bei dem die einzelnen Stationen hintereinander angeordnet sind und einen Einlaß, eine Transportstrecke und einen Auslaß für die vertikal ausgerichteten Scheiben aufweisen und insbesondere eine schiefe Ebene als Führungsbahn für die Silizium-Scheiben aufweist. The task mentioned at the beginning is also with a Process solved in which the individual stations are arranged one behind the other and one inlet, one Transport route and an outlet for the vertical have aligned discs and in particular a inclined plane as a guideway for the silicon wafers having.
Bei der erfindungsgemäßen Vorrichtung durchlaufen die Scheiben in vertikaler Ausrichtung die einzelnen Bearbeitungsstationen, so daß die Scheiben beidseitig bearbeitet werden können. Werden Dampfphasen oder Naßprozesse verwendet, z. B. beim Aufbringen eines Haftvermittlers, beim Entwickeln, beim Ätzen, beim Spülen usw., können die einzelnen Stationen so angeordnet sein, daß die Fluide kaskadenartig verwendet werden, d. h. das Fluid einer nachfolgenden Station wird anschließend in einer vorausgehenden Station, in welcher z. B. eine Vorbehandlung oder eine andere Seite des Substrats behandelt wird, verwendet.In the device according to the invention, the Disks in vertical alignment each Processing stations, so that the discs on both sides can be edited. Are vapor phases or Wet processes used, e.g. B. when applying a Adhesion promoter, when developing, when etching, when rinsing etc., the individual stations can be arranged that the fluids are used cascaded, i.e. H. the Fluid from a subsequent station is then in a previous station, in which e.g. Legs Pretreatment or another side of the substrate is used.
Vorteilhaft sind Stationen zum Auftragen eines Haftvermittlers, zur Behandlung mit Photolacken, Schutzlacken, Ausgleichslackschichten, zum Trocknen, zur Entwicklung, zur Spülung, für die Naßprozesse wie Ätzen usw., zum Belichten usw. vorgesehen. In allen diesen Stationen können die Substrate in vertikaler Ausrichtung behandelt werden.Stations for applying one are advantageous Adhesion promoter, for treatment with photoresists, Protective lacquers, leveling lacquer layers, for drying, for Development, for rinsing, for wet processes such as etching etc., intended for exposure, etc. In all of these Stations can align the substrates vertically be treated.
Vorteilhaft ist die Station mit wenigstens einem Stopper versehen. Auf diese Weise können die einzelnen Substrate über eine vorgegebene Zeit in der Station verweilen und werden anschließend für den Weitertransport freigegeben. Zudem können die Stationen mit Drehantriebselementen versehen sein, so daß die Substrate während ihres Aufenthalts in der Station gedreht werden. Eine Weiterbildung sieht vor, daß vor bzw. nach den Stationen Magazine vorgesehen sind, in welchen die Scheiben in vertikaler Anordnung enthalten sind. Aus diesen Stationen werden die Scheiben z. B. über Stempel heraustransportiert und in die Stationen eingesetzt oder die Magazine werden gekippt und das gewünschte Substrat fällt über den Einlaß in die erste Station. Eine Blende hält die übrigen Substrate im Magazin zurück.The station with at least one stopper is advantageous Mistake. In this way, the individual substrates stay in the station for a predetermined time and are then released for further transport. The stations can also be equipped with rotary drive elements be provided so that the substrates during their Stay in the station. A Continuing education provides that before or after the stations Magazines are provided in which the discs in vertical arrangement are included. From these stations the disks z. B. transported out by stamp and used in the stations or the magazines tilted and the desired substrate falls over the inlet to the first station. One aperture holds the rest Substrates in the magazine.
Weitere Vorteile, Merkmale und Einzelheiten ergeben sich aus den Unteransprüchen sowie der nachfolgenden Beschreibung, in der unter Bezugnahme auf die Zeichnung ein besonders bevorzugtes Ausführungsbeispiel im Einzelnen dargestellt ist. Dabei können die in der Zeichnung dargestellten und in den Ansprüchen sowie in der Beschreibung erwähnten Merkmale jeweils einzeln für sich oder in beliebiger Kombination erfindungswesentlich sein. In der Zeichnung zeigen:Further advantages, features and details arise from the subclaims and the following Description in which with reference to the drawing particularly preferred embodiment in detail is shown. You can do that in the drawing shown and in the claims as well as in the Description mentioned features each individually or be essential to the invention in any combination. The drawing shows:
Fig. 1 einen Ausschnitt aus der bearbeiteten Vorrichtung mit vertikale angeordneten Silizium-Scheiben; Figure 1 shows a section of the processed device with vertically arranged silicon wafers.
Fig. 2 eine Station, in welcher das Substrat einen Bearbeitungsprozeß durchläuft. Fig. 2 shows a station in which the substrate undergoes a processing process.
In der Fig. 1 sind zwei Stationen 1 und 2 einer Bearbeitungsvorrichtung 3 sowie ein Magazin 4 gezeigt, in welchem Silizium-Scheiben bevorratet sind. Aus diesem Magazin 4 werden die Silizium-Scheiben 5 z. B. durch Verkippen des Magazins 4 in Richtung des Pfeils 6 oder durch ein Handling-System in die erste Station 1 in vertikaler Ausrichtung eingeführt. In der Station 1 werden die Silizium-Scheiben 5 über Führungselemente 7 und 8 an ihren Rändern gegen Umkippen gehalten. Da die Führungselemente 7 und 8 geneigt angeordnet sind und das Führungselement 8 eine Laufbahn 9 bildet, rollt die Silizium-Scheibe 5 durch Schwerkraft in Transportrichtung, d. h. in Richtung des Pfeils 10. In der Station 1 wird die Silizium-Scheibe 5 von einem Stopper 11 gehalten, so daß sie in dieser Position gehalten wird und bearbeitet werden kann. Dort kann die Silizium-Scheibe 5 z. B. mittels eines Drehantriebselements 14 in Drehung versetzt werden, so daß sie gleichmäßig bearbeitet wird. Nach der Bearbeitung wird die Station 1 wieder in die Ausgangslage zurückgebracht und der Stopper 11 gibt die Silizium-Scheibe 5 frei, so daß sie über ein Zwischenelement 15 in die nächste Station 2 rollen kann.In Fig. 1 two stations 1 and 2 are shown a processing device 3 and a magazine 4, in which silicon wafers stored. From this magazine 4 , the silicon wafers 5 z. B. by tilting the magazine 4 in the direction of arrow 6 or by a handling system in the first station 1 in a vertical orientation. In station 1 , the silicon wafers 5 are held at their edges against tipping over by guide elements 7 and 8 . Since the guide elements 7 and 8 are arranged at an incline and the guide element 8 forms a raceway 9 , the silicon wafer 5 rolls in the transport direction by gravity, ie in the direction of the arrow 10 . In the station 1 , the silicon wafer 5 is held by a stopper 11 so that it is held in this position and can be processed. There, the silicon wafer 5 z. B. are rotated by means of a rotary drive element 14 so that it is machined evenly. After processing, the station 1 is returned to the starting position and the stopper 11 releases the silicon wafer 5 , so that it can roll into the next station 2 via an intermediate element 15 .
Die Fig. 2 zeigt ein Ausführungsbeispiel einer Station, z. B. der Station 2, über welche die Scheibe 5 nach einem Auseinanderfahren des Führungselemente 7 und 8 in Richtung der Pfeile 12 und 13, wodurch die Scheibe 5 freigegeben wird, durch Transport in Richtung des Pfeils 16 in eine separate Behandlungszone 17 transportiert wird. In der separaten Behandlungszone 17 werden z. B. Fluide auf die Oberfläche 18 des Substrats aufgebracht wird. Dabei wird das Substrat von hinten z. B. mit einem Substrathalter 19 gehalten und in Drehung versetzt. Überschüssige Fluide wird von der Oberfläche 18 abgeschleudert. Bei thermischen Prozessen kann der Substrathalter 19 auch beheizt sein. Nach der Behandlung wird durch Verfahren des Substrathalters 19 die Scheibe 5 wieder in die Führungselemente 7, 8 zurückgeführt, so daß die Scheibe 5 über die Laufbahn der nächsten Station zugeführt werden kann. Fig. 2 shows an embodiment of a station, for. B. the station 2 , via which the disc 5 after moving the guide elements 7 and 8 in the direction of arrows 12 and 13 , whereby the disc 5 is released, is transported by transport in the direction of arrow 16 in a separate treatment zone 17 . In the separate treatment zone 17 z. B. Applying fluids to the surface 18 of the substrate. The substrate is z. B. held with a substrate holder 19 and rotated. Excess fluids are thrown off the surface 18 . In thermal processes, the substrate holder 19 can also be heated. After the treatment, the disk 5 is returned to the guide elements 7 , 8 by moving the substrate holder 19 , so that the disk 5 can be fed to the next station over the track.
Insgesamt kann festgehalten werden, daß durch die vertikale Ausrichtung der einzelnen Scheiben 5 relativ wenig Raum für die Behandlung dieser Scheiben 5 benötigt wird. Dies führt zu einer Verringerung der Kosten des Reinraums sowie der gesamten Anlage. Die Partikelkontamination ist bedingt durch die vertikale Substratstellung relativ gering, was der Forderung nach Reinhalten der Substrate während des Prozesses im Hinblick auf die immer kleiner werdenden Strukturen gerecht wird.Total 5 that relatively little space is needed for the treatment of these disks 5 by the vertical alignment of the individual disks can be held. This leads to a reduction in the costs of the clean room and the entire system. The particle contamination is relatively low due to the vertical substrate position, which meets the requirement for keeping the substrates clean during the process in view of the ever smaller structures.
Claims (9)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1997130582 DE19730582A1 (en) | 1997-07-17 | 1997-07-17 | Photolithographic processing of microelectronic components |
JP2000503546A JP2001510940A (en) | 1997-07-17 | 1998-07-01 | Method and apparatus for processing flat substrates, especially silicon thin sheets (wafers), for producing microelectronic components |
PCT/EP1998/004049 WO1999004416A1 (en) | 1997-07-17 | 1998-07-01 | Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components |
US09/462,829 US6251551B1 (en) | 1997-07-17 | 1998-07-01 | Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components |
EP98939590A EP0996968A1 (en) | 1997-07-17 | 1998-07-01 | Method and device for treating two-dimensional substrates, especially silicon slices (wafers), for producing microelectronic components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1997130582 DE19730582A1 (en) | 1997-07-17 | 1997-07-17 | Photolithographic processing of microelectronic components |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19730582A1 true DE19730582A1 (en) | 1999-01-21 |
Family
ID=7835957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1997130582 Withdrawn DE19730582A1 (en) | 1997-07-17 | 1997-07-17 | Photolithographic processing of microelectronic components |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE19730582A1 (en) |
-
1997
- 1997-07-17 DE DE1997130582 patent/DE19730582A1/en not_active Withdrawn
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