EP0886887A1 - Planar emitter - Google Patents

Planar emitter

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Publication number
EP0886887A1
EP0886887A1 EP97914238A EP97914238A EP0886887A1 EP 0886887 A1 EP0886887 A1 EP 0886887A1 EP 97914238 A EP97914238 A EP 97914238A EP 97914238 A EP97914238 A EP 97914238A EP 0886887 A1 EP0886887 A1 EP 0886887A1
Authority
EP
European Patent Office
Prior art keywords
layer
radiator according
electrically conductive
thickness
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97914238A
Other languages
German (de)
French (fr)
Other versions
EP0886887B1 (en
Inventor
Lutz Rothe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pates Technology Patentverwertungsgesellschaft Fue
Original Assignee
Pates Technology Pantentverwertungsgesellschaft fur Satelliten- und Moderne Informationstechnologien Mbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Pates Technology Pantentverwertungsgesellschaft fur Satelliten- und Moderne Informationstechnologien Mbh filed Critical Pates Technology Pantentverwertungsgesellschaft fur Satelliten- und Moderne Informationstechnologien Mbh
Publication of EP0886887A1 publication Critical patent/EP0886887A1/en
Application granted granted Critical
Publication of EP0886887B1 publication Critical patent/EP0886887B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/0407Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • H01Q21/0006Particular feeding systems
    • H01Q21/0075Stripline fed arrays

Definitions

  • the invention relates to a planar radiator with a radiator plane having surface resonators and a network plane with a coupling network, the surface resonators being galvanically and in phase coupling with one another via the coupling network.
  • Reflector antennas or planar antennas or radiators are used today for communication services, in particular multipoint multichannel communication services, which require the reception or radiation of directed electromagnetic radiation fields of linear polarization in the microwave spectrum.
  • the radiation properties of the reflector antennas are based on the generation of a corresponding amplitude and phase assignment of the electromagnetic radiation field components on the reflector surface by means of suitable exciters.
  • the reflectors used are either designed in the form of closed surfaces of defined curvature and edges or are made by grid-like arrangements of discrete conductive linear elements of defined length and distance.
  • Known planar solutions are based on the right order of galvanically and parallel-fed flat resonators of defined group sizes and diancing to one another.
  • planar antennas usually only have high system quality in a small spectral range and are therefore only suitable for use with multipom multichannel communication services to a limited extent, since the small bandwidth means that only relatively few frequency scanners can be transmitted with a single antenna are.
  • planar radiator is constructed in a sandwich-like manner from layers which are plane-parallel to one another, and in that a first dielectric layer by means of an electrically conductive thin layer, which forms the common ground plane for the radiator and network levels, of a second dielectric layer is separated, and that the first dielectric layer on its side facing away from the electrically conductive layer carries the surface resonators, and that the second dielectric layer carries on its side facing away from the electrically conductive layer the coupling network which is formed from microstrip lines.
  • the planar emitter according to the invention advantageously only needs a common ground area for the emitter and network level, as a result of which the overall height of the emitter is significantly reduced compared to known planar emitters and the manufacturing material costs are reduced.
  • Kar.r. without influencing the wave resistance of the coupling network, by appropriately selecting the thickness of the first dielectric layer, the band width of the radiation field to be determined and err.ofa ⁇ enen radiation field can be varied, wooei at the same time a high system quality is achieved in the entire spectral range.
  • Each flat resonator is open to the coupling network with an electrically conductive connection by means of an electrically connecting pin,
  • the electrically conductive connector pin is inserted in a through hole perpendicular to the emitter and network veins.
  • the connecting pins are relatively long, as a result of which the pins themselves have an electrically transforming effect.
  • the inductive flower component represented by the pen can therefore no longer be neglected and must be balanced.
  • This can be done on the one hand by means of a sleeve which at least in sections envelops the pin and is made of a material, in particular Teflon, which has a higher dielectric number than the materials forming the dielectric layers, which serve as the base material for the emitter and network level.
  • Teflon Teflon
  • the inductive dummy component of the pin can also advantageously be compensated for by means of the coupling network, by utilizing the transforming effect of the length and width ratios of the microstrip lines used.
  • Such transformations using microstrip conductors are well known from the relevant literature.
  • a pulse can optionally be omitted.
  • Apertures are obtained by simulation or experimental tests.
  • the first dielectric layer is constructed from two dielectric materials, each of which forms a layer for itself.
  • the thickness of the first layer is greater than the thickness of the second layer, the second layer bearing the resonator surfaces on its side facing away from the first layer.
  • the first layer forms the actual 3as ⁇ material of the planar emitter and essentially determines the properties of the emitter plane with its ⁇ r and loss angle tan ⁇ ⁇ .
  • the material of the first layer is advantageously the cheap material polystyrene, which is flexible in its foamed form and in particular has a specific volume weight of 20kg / m 3 .
  • the second layer is advantageously formed by a polyethylene terephthalate film which is glued to the first layer.
  • the advantage of this polyethylene terephthalate film is that it forms a firm and permanent connection with copper, which means that the resonator surfaces have firm adhesion.
  • the fan resonators can be shaped and arranged in any way. To generate the necessary impedance profile along the line of symmetry of the cavity resonators, which is transverse to the radiating edge, and to generate the necessary straniun ⁇ soezc ⁇ enen individual characteristic of the cavity resonators it is recommended to design the Fiachenresonatoren recntec ⁇ g, whereby the broad side is identical to the radiating edge.
  • the cavity resonators are advantageously arranged in a matrix to one another. It has never been shown that for most fields of application it is sufficient to arrange only eight fan resonators, in particular two rows and four columns. Also for reasons of simple computability and minimizing the dimensions of the planar emitter, it is advantageous if the row and column spacings of the array resonators arranged in the form of a matrix are identical to one another.
  • the planar radiator has an extension that carries a wave path that connects a coupling point of the coupling network to a connector.
  • a commercially available N socket can be connected, which is modified such that the inner conductor of the socket is connected to the microstrip line, which is applied to the extension of the dielectric carrier of the coupling network, and that the ground area of the extension, which at the same time Extension of the electrically suffering layer is flatly connected to the outer jacket of the socket by the pressing pressure generated by means of a dielectric press block.
  • the wave path is formed by a microstrip line, the second dielectric layer and the ground plane, which is connected to the coaxial connector accordingly.
  • FIG. 3 a plan view of the network veins
  • FIG. 4 a plan view of the electrically conductive ground surface
  • Figure ⁇ a cross-sectional view of the wave path LÜG de ⁇ connector
  • FIG. 6 a cross-sectional illustration of the radiator according to the invention, with two layers forming the first dielectric layer;
  • Figure 7 a representation according to Figure 6, wherein the length of the sleeve is shortened and its wall thickness is increased.
  • FIG. 1 shows an embodiment of the radiator according to the invention, in which the first dielectric layer 5 is made of a single material.
  • the resonator surfaces 4, consisting of a thin copper layer, are applied to the top of the rail 5.
  • the conductive ground surface 6 lies between the first dielectric layer 5 and the second dielectric layer 7.
  • the ground surface 6 is an approximately 17-18 ⁇ m thick copper layer.
  • the microstrip lines 8 or the coupling network 3 are arranged on the flat side of the layer 7 facing away from the ground plane.
  • the coupling points 12 and 13 are connected by means of an electrically conductive pin 9.
  • the pin 9 has a small diameter, so that the input impedance of the flat resonator 4, which is determined by the position of the coupling point 12, is not undefined by a large-area contact of the pin 9 with the resonator surface.
  • the Darcnrißsser of the pin 9 is therefore to be chosen so small that the stripe side of the coupling network 3 is not exceeded ⁇ ir ⁇ .
  • the thickness of the pin 9 should not exceed 1 mm.
  • the pen is used for the purposes of fixing and cutting. permanent contact with the copper layers of the net works and the ⁇ trah_erebene soldered and is of a sleeve _1 -m ⁇ eoen, which acts to stiffen the stranier.
  • the thickness D2 of the layer 5 essentially determines the overall standard of the planar radiator.
  • the mass flap 6 has in the areas where the pin 9 passes through the ground surface 6 a circular recess 10, whose diameter is larger than the outer diameter of the pin 9. If the length of the sleeve 11 is equal to the lengths D2 plus D3, the diameter of the recess 10 is to be selected at least as large as the outer diameter of the sleeve II.
  • the layer 5 is made of polystyrene, which is flexible in the foamed state, as a result of which the planar emitter can be bent within certain limits. This bendability is only slightly impaired by the thin copper layers 4, 6 and 8 and the layer 7.
  • the coupling point 12 need not be arranged centrally to the resonator surfaces 4.
  • the input impedance of the field resonators required for the respective frequency and bandwidth can be calculated, from which the position of the coupling point 12 can be derived.
  • FIG. 3 shows the coupling network 3 with the wave path 16 that emits or decouples the signals.
  • the network 3 consists of striplines 3a-3f and 16.
  • the stripline sections have different lengths and widths in order to compensate for the inductive component caused by the length of the pin 9 and for the impedance-matched merging of the waveguide paths leading to the cavity resonators.
  • the conductive copper layer of the bulk sheet is shown in FIG. 4.
  • the black areas 10, 19 and 20 represent places where the copper was left out. Due to these steepnesses, the corresponding diameter is also: Am ⁇ t ⁇ _e pins 9 "nd 21, sleeves 11, and Fastening screws for the connecting duo: 18 you can reach through the Massefladhe 6.
  • FIG. 5 shows a cross-sectional representation of the projection 24 carrying the wave path 16 and the connector 18.
  • the projection 24 lies between the connector 18 and the pressure block 22.
  • the connector 18 and the pressure block 22 are by means of the projection 24 and the bores 23 provided therefor engaging fastening screws screwed together, so that the connector 18 is in fixed connection with the projection 24.
  • planar radiator has a high system quality in the frequency spectrum from 2,500 GHz to 2,686 GHz.
  • the resonator surfaces have a length of 47 mm, a width of 53 mm and a row and column spacing of 87 mm.
  • the feed or coupling point 12 is located approximately 2 mm from the center of the broad side within the surface.
  • the thicknesses Dl, D3 and D5 of the copper layers are approx. 18 ⁇ m thick.
  • the layer 5 has two layers, the first layer 14 having a thickness LI equal to 10.5 mm and consisting of foamed polystyrene, the spec. Volume weight is 20kg / m 3 .
  • the second layer 15 has a thickness L2 of 100 ⁇ m and consists of polyethylene terephthalate.
  • the second dielectric layer 7 consists of glass fiber-marketed polytetrafluoroethylene 381 ⁇ m thick.
  • the pin 9 nat a Durcr-ir.es ⁇ er. 1.2 mm and lies with its one end m of the 3hole of the hole 7, the diameter of which is 1.2 mm and passes through the coupling point 13.
  • the rail 5 and 6 also have holes in the area of the pin 9, the diameter of which for receiving the Pin 9 and the sleeve 11 4.2 mm oetra ⁇ t.
  • Opp_ungsnetzwerJc 3 is thawed symmetrically, in such a way that all resonator surfaces are fed in the same phase from the coupling point 1 " .
  • the coupling points 13 have an inner diameter of 1.2 mm and an outer diameter of 2.1 mm.
  • a conductor 3a with a width of 0.49 mm for a length of 27 mm goes out in the direction of the adjacent feed point 13 in the row.
  • This conductor 3a then jumps into a conductor 3b with a width of 1.15 mm, which is 31 mm long.
  • the conductor 3b m again has a width of 0.49 mm in order to reach the adjacent feed point 13 after a length of 27 mm.
  • the feed points of the resonator surfaces 4 located on the outside in each line are connected to the feed points 13, respectively, of the resonator surfaces 4 that are adjacent to and below the line.
  • a conductor 3c with a width of 1.88 mm and a length of 22.3 mm connects from the center of the conductor 3b in the direction of the conductor 3b opposite in the column, which then jumps to a width of 1.15 mm for a distance of 42.45 mm (conductor 3d) transforms.
  • the conductor then widens again to a width of 1.88 mm in order to meet with the center of the conductor 3b opposite the column after a length of 22.3 mm.
  • a line 3e with a width of 1.88 mm and a length of 22.3 mm is connected to the center of the conductor 3d.
  • the conductor 3e then changes to a width of 1.15 mm for a length of 129.4 mm (conductor 3f).
  • the width of the conductor 3f changes to 1.88 mm for a length of 22.3 mm.
  • the center of the opposite conductor 3d is thus reached.
  • the middle of the conductor 3f is followed by a waveguide with a width of 1.88 mm and a length of 22.3 mm, in order to reduce its width to 1.15 mm and to lead to the point of interruption 21 of the network 3 .

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
  • Bipolar Transistors (AREA)
  • Polarising Elements (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

A planar emitter equipped with planar resonators that is simple, small in construction and consists of few, easily manufactural components, while at the same time having high frequency dependent system quality with the widest possible spectral range, has a plurality of sandwich-like layers (4, 5, 6, 7, 8) that are planned parallel to each other with the layer (5) being made of two different dielectric materials (14) and (15). The thickness (L1) of layer (14) is greater than the thickness (L2) of layer (15) with layer (4) having a plurality of spaced, thin layer, electrically conductive planar resonators (4) in contact with one side of layer (15). One side of layer (14) is in contact with an electrically conductive thin layer (6) that defines a common earthing member that has its opposite side in contact with layer (17) made of a dielectric material. A coupling network (3) is included in layer (8) and comprises microstrip circuits (3a-3f) in contact with layer (7). Means in the form of pins (9) extends through the layers (5, 6, 7) from said coupling network (3) to said planar resonators (4) to couple said planar resonators (4) electrically in phase.

Description

Planarer StrahlerPlanar radiator
Die Erfindung betrifft einen planaren Strahler mit einer Flächenresonatoren aufweisenden Strahlerebene und einer ein Kopplungsnetzwerk aufweisenden Netzwerkebene, wobei die Flächenresonatoren über das Kopplungsnetzwerk miteinander galvanisch und phasengleich gekoppelt sind.The invention relates to a planar radiator with a radiator plane having surface resonators and a network plane with a coupling network, the surface resonators being galvanically and in phase coupling with one another via the coupling network.
Für Kommunikationsdienste insbesondere Multipoint-Multichannel- Kommunikationsdienste, die den Empfang bzw. die Abstrahlung gerichteter elektromagnetischer Strahlungsfelder linearer Polarisation im Mikrowellenspektrum erfordern, werden heute Reflektorantenne oder planare Antennen bzw. Strahler eingesetzt. Die Strahlungseigenschaften der Reflektorantennen beruht auf der Erzeugung einer entsprechenden Amplituden- und Phasenbelegung der elektromagnetischen Strahlungsfeld¬ komponenten auf der Reflektorfläche mittels geeigneter Erreger. Die verwendeten Reflektoren sind hierbei entweder in Form geschlossener Flachen definierter Krümmung und Berandung ausgelegt oder werden durch gitterartige Anordnungen diskreter leitfähiger Linearelemeπte definierter Lange und Distar.zierung ausgeführt. Bekannte planare Losungen beruhen auf der .--r.Ordnung galvanisch und parallel gespeister Flachenresonatoren definierter Gruppengroße und Di≤tanzierung zueinander. Nachteilig bei den bekannten planaren Antennen ist, daß sie meist nur m einem kleinen Spektralbereich hohe Systemguten aufweisen und somit nur mit Einschränkungen für den Einsatz für Multipomt-Multichannel-Kommunikationsdienste geeignet sind, da durch die kleine Bandbreite nur relativ wenige Frequenzcander mit einer einzigen Antenne übertragbar sind.Reflector antennas or planar antennas or radiators are used today for communication services, in particular multipoint multichannel communication services, which require the reception or radiation of directed electromagnetic radiation fields of linear polarization in the microwave spectrum. The radiation properties of the reflector antennas are based on the generation of a corresponding amplitude and phase assignment of the electromagnetic radiation field components on the reflector surface by means of suitable exciters. The reflectors used are either designed in the form of closed surfaces of defined curvature and edges or are made by grid-like arrangements of discrete conductive linear elements of defined length and distance. Known planar solutions are based on the right order of galvanically and parallel-fed flat resonators of defined group sizes and diancing to one another. A disadvantage of the known planar antennas is that they usually only have high system quality in a small spectral range and are therefore only suitable for use with multipom multichannel communication services to a limited extent, since the small bandwidth means that only relatively few frequency scanners can be transmitted with a single antenna are.
Es iεt daher Aufgabe der Erfindung, einen planaren Strahler mit Flächenresonatoren bereitzustellen, der einfach und klein in seinem Aufbau ist und aus wenigen leicht zu fertigenden Teilen besteht und zugleich in einem möglichst breiten Spektralbereich eine hohe frequenzunabhängige Systemgüte hat, derart, daß er für eine mehrkanalige Punkt-zu-Punkt-Ubertragung insbesondere im Frequenzbereich zwischen 2.500 GHz bis 2.686 GHz geeignet ist.It is therefore the object of the invention to provide a planar radiator with surface resonators which is simple and small in its construction and consists of a few easy-to-manufacture parts and at the same time has a high frequency-independent system quality in the widest possible spectral range, such that it is suitable for a multi-channel Point-to-point transmission is particularly suitable in the frequency range between 2,500 GHz and 2,686 GHz.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß der planare Strahler sandwich-artig aus zueinander planparallelen Schichten aufgebaut ist, und daß eine erste dielektrische Schicht mittels einer elektrisch leitenden dünnen Schicht, welche die gemeinsame Massefläche für die Strahler- und die Netzwerkebene bildet, von einer zweiten dielektrischen Schicht getrennt ist, und daß die erste dielektrische Schicht an ihrer der elektrisch leitenden Schicht abgewandten Seite die Flächenresonatoren tragt, und daß die zweite dielektrische Schicht an ihrer der elektrisch leitenden Schicht abgewandten Seite das Kopplungsnetzwerk trägt, das aus Mikroεtreifenleitungen gebildet ist.This object is achieved according to the invention in that the planar radiator is constructed in a sandwich-like manner from layers which are plane-parallel to one another, and in that a first dielectric layer by means of an electrically conductive thin layer, which forms the common ground plane for the radiator and network levels, of a second dielectric layer is separated, and that the first dielectric layer on its side facing away from the electrically conductive layer carries the surface resonators, and that the second dielectric layer carries on its side facing away from the electrically conductive layer the coupling network which is formed from microstrip lines.
Der erfindungsgemäße planare Strahlers benötigt vorteilhaft nur noch eine gemeinsame Massefläche für die Strahler- und Netzwerkebene, wodurch sich die Gesamthöhe des Strahlers gegenüber bekannten planaren Strahlern deutlich verringert und die Fertigung-- Materialkosten verringert werden. Auch kar.r. ohne Beeinflussung des Wellenwiderstana.es des Kopplungsnettwerks durch geeignete Wahl der Dicke der ersten dielektrischen Schicht die Bandoreite des vom Strahler zu sencenoen und err.ofaπσenen Straπiungsfeldes variiert wercen, wooei gleichzeitig eine hohe Systemgute im gesamten Spektralbereich erzielt wird.The planar emitter according to the invention advantageously only needs a common ground area for the emitter and network level, as a result of which the overall height of the emitter is significantly reduced compared to known planar emitters and the manufacturing material costs are reduced. Kar.r. without influencing the wave resistance of the coupling network, by appropriately selecting the thickness of the first dielectric layer, the band width of the radiation field to be determined and err.ofaπσenen radiation field can be varied, wooei at the same time a high system quality is achieved in the entire spectral range.
Jeαer Flacnenresonator ist αaoei mittels eines elektrisch ieitenαen Verbindungsstiftes mit dem Kopplungsnetzwerk m elektπscn leitender Verbindung, αer elektrisch leitende Verbmαungsstift m einer senkrecht zur Strahler- und Netzwerkeoene befindlichen Durcngangsbohrung einliegt.Each flat resonator is open to the coupling network with an electrically conductive connection by means of an electrically connecting pin, The electrically conductive connector pin is inserted in a through hole perpendicular to the emitter and network veins.
Durch die unverhältnismäßig große Dicke der ersten dielektriscnen Schicht, sind die Verbindungsstifte relativ lang, wodurch die Stifte selbst elektrisch transformierend wirken. Die vom Stift repräsentierte induktive Blmdkomponente kann daher nicht mehr vernachlässigt werden und muß ausgeglichen werden. Dies kann zum einen mittels einer Hülse geschehen, die den Stift zumindest abschnittsweise umhüllt und aus einem Material insbesondere Teflon ist, das eine höhere Dielektnzitatszahl hat, als die die dielektrischen Schichten bildenden Materialien, die als Basismateπal für die Strahler¬ und Netzwerkebene dienen. Mittels der Einstellung der Wandstarke, der Höhe und des εr der Hülse kann der Kapazitatsbelag der Stift-Hulse-Kombmation eingestellt werden, wodurch die induktive Blmdkomponente des Stifts kompensiert wird.Due to the disproportionate thickness of the first dielectric layer, the connecting pins are relatively long, as a result of which the pins themselves have an electrically transforming effect. The inductive flower component represented by the pen can therefore no longer be neglected and must be balanced. This can be done on the one hand by means of a sleeve which at least in sections envelops the pin and is made of a material, in particular Teflon, which has a higher dielectric number than the materials forming the dielectric layers, which serve as the base material for the emitter and network level. By adjusting the wall thickness, the height and the ε r of the sleeve, the capacitance of the pin-sleeve combination can be adjusted, which compensates for the inductive component of the pin.
Zum anαeren kann jedoch auch vorteilhaft die Kompensation der induktiven Blindkomponente des Stiftes mittels des Kopplungsnetzwerks erfolgen, indem die transformierende Wirkung der Langen- und Breitenverhaltnisse der verwendeten Mikrostreifenleitungen ausgenutzt werden. Derartige Transformationen mittels Mikrostreifenieitern sind hinlänglich aus der einschlagigen Literatur bekannt. Auf eine Kulse kann m diesem Fall gegeoenenfalls verzicntet werden.On the other hand, however, the inductive dummy component of the pin can also advantageously be compensated for by means of the coupling network, by utilizing the transforming effect of the length and width ratios of the microstrip lines used. Such transformations using microstrip conductors are well known from the relevant literature. In this case, a pulse can optionally be omitted.
Ξs ist ferner erforderlicn, αaß αie eler.triscr. leitende αunne Scmcr.t m den Bereichen, wo die elektriscn leitenden Stifte die Scn^cht durchtreten, msoescnαere kreisförmig fensterartige -.assoarungen nat, derart, αaß die Stifte mit der elektriscn _eιter.den ≤cr.icr.t nicht m e_el:tπscner Verbindung sind. Diese kreisförmig fensterartigen A.ussparungen bilden Blenden, wobei mittels des Durchmessers der Aussparungen der Kopplungsfaktor einstellbar ist. Der Koppiungsfaktor bestimmt dabei den Anteil der Signalintensitat, welcher von der Strahlerebene zurIt is also necessary that the el.triscr. conductive αunne Scmcr.tm the areas where the conductive pins elektriscn the Scn CHT ^ pass, msoescnαere circular window-like -.assoarungen nat such pins αaß not ≤cr.icr.t m e_e l with the elektriscn _eιter.den: tπscner Are connected. This Circular window-like recesses form apertures, the coupling factor being adjustable by means of the diameter of the recesses. The coupling factor determines the portion of the signal intensity that goes from the radiator level to
Netzwerkebene gefuhrt wird. Den optimalen Durchmesser derNetwork level is managed. The optimal diameter of the
Blenden erhält man durch Simulation oder experimentelle Tests.Apertures are obtained by simulation or experimental tests.
Damit der planare Strahler flexibel bzw. biegsam wird, ist es möglich, daß die erste dielektrische Schicht aus zwei dielektrischen Materialien, die jeweils für sich eine Lage bilden, aufgebaut ist. Die Dicke der ersten Lage ist hierbei größer, als die Dicke der zweiten Lage, wobei die zweite Lage an ihrer der ersten Lage abgewandten Seite die Resonatorflächen tragt. Die erste Lage bildet dabei das eigentliche 3asιsmaterιal des planaren Strahlers und bestimmt mit seinem εr sowie Verlustwinkel tan δε im wesentlichen die Eigenschaften der Strahlerebene. Das Material der ersten Lage ist vorteilshaft der billige Werkstoff Polystyrol, welcher in seiner ausgeschäumten Form flexibel ist, und insbesondere ein spezifisches Volumengewicht von 20kg/m3 hat. Die zweite Lage ist vorteilhaft durch eine Polyethylenterephtalat-Folie gebildet, die mit der ersten Lage verklebt ist. Der Vorteil dieser Polyethylenterephtalat-Folie ist, daß sie mit Kupfer eine feste und dauerhafte Verbindung eingeht, wodurch die Resonatorflächen eine feste Haftung haben.So that the planar radiator becomes flexible or pliable, it is possible for the first dielectric layer to be constructed from two dielectric materials, each of which forms a layer for itself. The thickness of the first layer is greater than the thickness of the second layer, the second layer bearing the resonator surfaces on its side facing away from the first layer. The first layer forms the actual 3asι material of the planar emitter and essentially determines the properties of the emitter plane with its ε r and loss angle tan δ ε . The material of the first layer is advantageously the cheap material polystyrene, which is flexible in its foamed form and in particular has a specific volume weight of 20kg / m 3 . The second layer is advantageously formed by a polyethylene terephthalate film which is glued to the first layer. The advantage of this polyethylene terephthalate film is that it forms a firm and permanent connection with copper, which means that the resonator surfaces have firm adhesion.
Ein weiterer Vorteil durch den Einsatz der oben beschriebenen Hülsen ergibt sich dadurch, daß durch die steif ausgeführten Hülsen der Abstand zwischen der Strahler- und der Netzwerkebene zumindest in den Bereichen der Stifte auch unter Einwirkung äußerer Kräfte sowie bei der Antennenmontage konstant bleibt. Die Systemgüte verändert sich somit auch beim Verbiegen und Zusammendrucken des planaren Strahlers nicht.Another advantage of using the sleeves described above results from the fact that the spacing between the emitter and the network level remains constant due to the rigid sleeves, at least in the areas of the pins, even under the influence of external forces and during antenna installation. The system quality therefore does not change even when the planar emitter is bent and compressed.
Die Fiachenresonatoren können beliebig geformt und angeordnet werden. Zur Erzeugung des notwendigen Impedanzprofils entlang der quer zur strahlenden Kante liegenden Symmetrieiinie der Fiachenresonatoren, sowie zur Erzeugung der erforderlichen straniunαsoezcαenen Ξinzelcharakteristik der Fiachenresonatoren ist es empfehlenswert, die Fiachenresonatoren recntecκιg zu gestalten, wobei die Breitseite identisch der strahlenden Kante ist. Die Fiachenresonatoren werden dabei vorteil≤maßig matrixfcrmig zueinander angeordnet. Es hat sich nierbei gezeigt, daß es für die meisten Einsatzgebiete ausreicht, lediglicn acht Fiachenresonatoren msoesondere m zwei Zeilen und vier Spalten anzuordnen. Ebenfalls aus Gründen der einfachen Berechenbarkeit und der Minimierung der Abmessungen des planaren Strahlers ist es von Vorteil, wenn Zeilen- und Spaltenabstande der matrixformig angeordneten Fiachenresonatoren zueinander gleich sind.The fan resonators can be shaped and arranged in any way. To generate the necessary impedance profile along the line of symmetry of the cavity resonators, which is transverse to the radiating edge, and to generate the necessary straniunαsoezcαenen individual characteristic of the cavity resonators it is recommended to design the Fiachenresonatoren recntecκιg, whereby the broad side is identical to the radiating edge. The cavity resonators are advantageously arranged in a matrix to one another. It has never been shown that for most fields of application it is sufficient to arrange only eight fan resonators, in particular two rows and four columns. Also for reasons of simple computability and minimizing the dimensions of the planar emitter, it is advantageous if the row and column spacings of the array resonators arranged in the form of a matrix are identical to one another.
Um eine gute Auskopplung bzw. Emkopplung des empfangenen bzw. zu sendenden Signals mit möglichst schon bestehenden Komponenten und Stecksystemen zu ermöglichen, hat der planare Strahler eine Verlängerung, die einen Wellenpfad tragt, die einen Kopplungspunkt des Kopplungsnetzwerks mit einem Anschlußstuck verbindet. An das Anschlußstuck ist eine handelsübliche N-Buchse anschließbar, die derart modifiziert ist, daß der Innenleiter der Buchse mit dem Mikrostreifenleiter, der auf der Verlängerung des dielektrischen Tragers des Kopplungsnetzwerks aufgebracht ist, verbunden ist, und daß die Masseflache der Verlängerung, die gleichzeitig die Verlängerung der elektrisch leidenden Schicht ist, mit dem Außenmantel der Buchse flachig durch den mittels eines dielektrischen Preßblocks erzeugten Preßdrucks verbunden ist. Der Wellenpfad wird durch eine Mikrostreifenleitung, der zweiten dielektrischen Schicht und der Masseflache gebildet, der mit dem koaxialen Anschlußstuck entsprechend verbunden ist.In order to enable a good decoupling or decoupling of the received or to be transmitted signal with components and plug-in systems that are already possible, the planar radiator has an extension that carries a wave path that connects a coupling point of the coupling network to a connector. At the connector, a commercially available N socket can be connected, which is modified such that the inner conductor of the socket is connected to the microstrip line, which is applied to the extension of the dielectric carrier of the coupling network, and that the ground area of the extension, which at the same time Extension of the electrically suffering layer is flatly connected to the outer jacket of the socket by the pressing pressure generated by means of a dielectric press block. The wave path is formed by a microstrip line, the second dielectric layer and the ground plane, which is connected to the coaxial connector accordingly.
Nachfz_gend werden einige Ausführungsformen der Erfindung anhand von Zeicnnungen naher erläutert.Nachfz_gend some embodiments of the invention are explained in more detail with reference to drawings.
:c_: ;me Ouerschnittsdarstellunσ des planaren SJ .ers ;: c_:; me Ouerschnittsdarstellunσ of the planar S J .ers;
"igur 1 : eine Draufs icht auf die Stranlerebene ; Figur 3: eine Draufsicnt auf die Netzwerkeoene;"igur 1: a top view of the stranler level; FIG. 3: a plan view of the network veins;
Figur 4: eine Draufsicnt auf die elektrisch leitende Masseflache;FIG. 4: a plan view of the electrically conductive ground surface;
Figur Ξ: eine Querschnittsdarstellung des Wellenpfades LÜG deε Anschlußstucks;Figure Ξ: a cross-sectional view of the wave path LÜG deε connector;
Figur 6: eine Querschnittsdarstellung des erfindungsgemaßen Strahlers, mit zwei die erste dielektrische Schicht bildenden Lagen;FIG. 6: a cross-sectional illustration of the radiator according to the invention, with two layers forming the first dielectric layer;
Figur 7: eine Darstellung gemäß Figur 6, wobei die Lange der Hülse verkürzt und ihre Wandstarke vergrößert ist.Figure 7: a representation according to Figure 6, wherein the length of the sleeve is shortened and its wall thickness is increased.
Die Figur 1 stellt eine Ausführungsform des erfindungsgemaßen Strahlers dar, bei dem die erste dielektrische Schicht 5 aus einem einzigen Material ist. Auf der Oberseite der Schient 5 sind die aus einer dünnen Kupferschicht bestehenden Resonatorflachen 4 aufgebracht. Zwischen der ersten dielektrischen Schicht 5 und der zweiten dielektrischen Schicht 7 liegt die leitende Masseflache 6. Die Masseflache 6 ist eine ca. 17-18μm starke Kupferschicht. Auf der der Masseflache abgewandten flachen Seite der Schicht 7 sind die Mikrostreifenleitungen 8 bzw. das Kopplungsnetzwerk 3 angeordnet. Die Kopplungspunkte 12 und 13 sind mittels eines elektrisch leitenden Stifts 9 in Verbindung. Der Stift 9 hat einen kleinen Durchmesser, damit die durch die Lage des Kopplungspunktes 12 bestimmte EingangsImpedanz des Flachenresonators 4 nicht durch einen großflächigen Kontakt des Stiftes 9 mit der Resonatorflache unbestimmt wird. Der Darcnriβsser des Stiftes 9 ist daher so klein zu wählen, daß die Streifenoreite des Kopplungsnetzwerks 3 nient ubersenritten Λirα. D_e Dicke des Stiftes 9 sollte daner 1 mm nicht ucerscnreiten. Der Stift wird zu Zwecken des Festsetzenε und des cesserer. dauerhaften Kontakts mit den Kupferschicnten der NettΛerk- und der Ξtrah_erebene verlotet und ist von einer Hülse _1 -mαeoen, die eine Versteifung des Straniers Gewirkt. Die Dιcκe D2 der Schicht 5 bestimmt im wesentlichen die Gesamtnor.e des planaren Strahlers.FIG. 1 shows an embodiment of the radiator according to the invention, in which the first dielectric layer 5 is made of a single material. The resonator surfaces 4, consisting of a thin copper layer, are applied to the top of the rail 5. The conductive ground surface 6 lies between the first dielectric layer 5 and the second dielectric layer 7. The ground surface 6 is an approximately 17-18 μm thick copper layer. The microstrip lines 8 or the coupling network 3 are arranged on the flat side of the layer 7 facing away from the ground plane. The coupling points 12 and 13 are connected by means of an electrically conductive pin 9. The pin 9 has a small diameter, so that the input impedance of the flat resonator 4, which is determined by the position of the coupling point 12, is not undefined by a large-area contact of the pin 9 with the resonator surface. The Darcnrißsser of the pin 9 is therefore to be chosen so small that the stripe side of the coupling network 3 is not exceeded Λirα. The thickness of the pin 9 should not exceed 1 mm. The pen is used for the purposes of fixing and cutting. permanent contact with the copper layers of the net works and the Ξtrah_erebene soldered and is of a sleeve _1 -mαeoen, which acts to stiffen the stranier. The thickness D2 of the layer 5 essentially determines the overall standard of the planar radiator.
Die Masseflacne 6 hat m den Bereichen, m denen der Stift 9 durch die Masseflache 6 hindurchtritt eine kreisförmige Aussparung 10, ceren Durchmesser großer -.st, als der Außendurcnmesser des Stifts 9. Ist die Lange der Hülse 11 gleich den Langen D2 plus D3, so ist der Durchmesser der Aussparung 10 mindestens so groß wie der Außendurchmesser der Hülse II zu wählen.The mass flap 6 has in the areas where the pin 9 passes through the ground surface 6 a circular recess 10, whose diameter is larger than the outer diameter of the pin 9. If the length of the sleeve 11 is equal to the lengths D2 plus D3, the diameter of the recess 10 is to be selected at least as large as the outer diameter of the sleeve II.
Die Schicht 5 ist aus Polysterol, welches im ausgeschaumten Zustand flexibel ist, wodurch der planare Strahler in gewissen Grenzen oiegbar ist. Diese Verbiegbarkeit wird nur geringfügig durch die dünnen Kupferschichten 4, 6 und 8 sowie die Schicht 7 beeinträchtigt.The layer 5 is made of polystyrene, which is flexible in the foamed state, as a result of which the planar emitter can be bent within certain limits. This bendability is only slightly impaired by the thin copper layers 4, 6 and 8 and the layer 7.
Wie aus Figur 2 ersichtlich ist, muß der Kopplungspunkt 12 nicht zentrisch zu den Resonatorflächen 4 angeordnet sein. Mit Hilfe bekannter Simmulationsmethoden, laßt sich die für die jeweilige Frequenz und Bandbreite erforderliche Eingangsimpedanz der Fiachenresonatoren berechnen, woraus die Lage des Kopplungspunktes 12 ableitbar ist.As can be seen from FIG. 2, the coupling point 12 need not be arranged centrally to the resonator surfaces 4. Using known simulation methods, the input impedance of the field resonators required for the respective frequency and bandwidth can be calculated, from which the position of the coupling point 12 can be derived.
In Figur 3 ist das Kopplungsnetzwerk 3 mit dem die Signale em- bzw. auskoppelnden Wellenpfad 16 dargestellt. Das Netzwerk 3 besteht aus Streifenleitungen 3a-3f sowie 16. Die Streifenleitungsabschmtte haben unterschiedliche Langen und Breiten, um den induktiven Anteil, welcher durch die Lange des Stifts 9 verursacht wurde, auszugleichen, sowie die impedanzangepaßte Zusammenfuhrung der zu den Fiachenresonatoren führenden Wellenleiterpfade zu ermöglichen.FIG. 3 shows the coupling network 3 with the wave path 16 that emits or decouples the signals. The network 3 consists of striplines 3a-3f and 16. The stripline sections have different lengths and widths in order to compensate for the inductive component caused by the length of the pin 9 and for the impedance-matched merging of the waveguide paths leading to the cavity resonators.
In Figur 4 ist die leitende Kupferschicr.t der Masseflacne € dargeΞte_lt. Die schwarzen ?unκte 10, 19 und 20 repräsentieren dabei Stellen, an denen das Kupfer ausgespart wurde. Durch diese Steilen sind zudem Bonrungen entsprechenden Durcnmessers :amιt α_e Stifte 9 „nd 21, Hülsen 11, sowie Befestigungsschrauben für das Anschlußstuo: 18 euren die Massefladhe 6 durchgreifen können.The conductive copper layer of the bulk sheet is shown in FIG. 4. The black areas 10, 19 and 20 represent places where the copper was left out. Due to these steepnesses, the corresponding diameter is also: Amιt α_e pins 9 "nd 21, sleeves 11, and Fastening screws for the connecting duo: 18 you can reach through the Massefladhe 6.
Die Figur 5 zeigt eine Querschmttsdarsteiiung des den Wellenpfad 16 sowie das Anschlußstuck 18 tragenden Vorsprungs 24. Der Vorsprung 24 liegt zwisenen dem Anscnlußstuck 18 und dem Anpreßblock 22. Das Anschlußstuck 18 und der Anpreßblock 22 werden mittels durch den Vorsprung 24 und den dafür vorgesehenen Bohrungen 23 greifenden Befestigungsschrauben miteinander verschraubt, so daß das Anscnlußstuck 18 mit dem Vorsprung 24 in fester Verbindung ist.FIG. 5 shows a cross-sectional representation of the projection 24 carrying the wave path 16 and the connector 18. The projection 24 lies between the connector 18 and the pressure block 22. The connector 18 and the pressure block 22 are by means of the projection 24 and the bores 23 provided therefor engaging fastening screws screwed together, so that the connector 18 is in fixed connection with the projection 24.
Nachfolgend werden beispielhafte geometrische Daten aufgeführt, mittels der der planare Strahler im Frequenzspektrum von 2.500 GHz bis 2.686 GHz eine hohe Systemgute aufweist.Exemplary geometric data are listed below, by means of which the planar radiator has a high system quality in the frequency spectrum from 2,500 GHz to 2,686 GHz.
Die Resonatorflachen haben dazu die Lange 47 mm, die Breite 53 mm sowie einen Zeilen- und Spaltenabstand von 87 mm. Der Speise- bzw. Kopplungspunkt 12 befindet sich von der Mitte der breiten Seite ca. 2 mm entfernt innerhalb der Fläche. Die Dicken Dl, D3 und D5 der Kupferschichten sind ca. 18μm stark. Die Schicht 5 ist wie in Figur 6 dargestellt zweilagig, wobei die erste Lage 14 eine Dicke LI gleich 10.5 mm hat und aus verschaumten Polystyrol besteht, dessen spez. Volumengewicht 20kg/m3 betragt. Die zweite Lage 15 hat eine Dicke L2 von lOOμm und besteht aus Polyethylenterephtalat. Die zweite dielektrische Schicht 7 besteht aus glasfaserversarktem Polytetraflourethylen der Starke 381 μm.The resonator surfaces have a length of 47 mm, a width of 53 mm and a row and column spacing of 87 mm. The feed or coupling point 12 is located approximately 2 mm from the center of the broad side within the surface. The thicknesses Dl, D3 and D5 of the copper layers are approx. 18μm thick. As shown in FIG. 6, the layer 5 has two layers, the first layer 14 having a thickness LI equal to 10.5 mm and consisting of foamed polystyrene, the spec. Volume weight is 20kg / m 3 . The second layer 15 has a thickness L2 of 100 μm and consists of polyethylene terephthalate. The second dielectric layer 7 consists of glass fiber-marketed polytetrafluoroethylene 381 μm thick.
Samtliche Schichten sind miteinander fest verfugt, wobei die Lage 14 mit der Lage 15 verklebt ist und die Kleoeverbmcung eine Starke von 7um hat.All layers are firmly joined together, whereby the layer 14 is glued to the layer 15 and the adhesive bond has a thickness of 7 μm.
Der Stift 9 nat einen Durcr-ir.esεer vor. 1.2 mn und liegt mit seinem einem Ende m der 3ohrung der Scnicht 7, deren Durchmesser eoer.falls 1.2 mm betragt ein und durchtritt den Kopp1ungspunkt 13. Die Schient 5 und 6 weist im Bereicn des Stifts 9 ebenfalls Bohrungen auf, deren Durchmesser zur Aufnanme des Stifts 9 und der Hülse 11 4.2 mm oetraσt. Das ?:opp_ungsnetzwerJc 3 ist symmetrisch aufgeoaut, derart, daß alie Resonatorflachen gleicnphasig vom Kopplungspunkt 1" αespeist werden. Die Kopplungspunkte 13 haben einen Innendurchmesser von 1.2 mm und einen Außendurcnmesser von 2.1 mm.The pin 9 nat a Durcr-ir.esεer. 1.2 mm and lies with its one end m of the 3hole of the hole 7, the diameter of which is 1.2 mm and passes through the coupling point 13. The rail 5 and 6 also have holes in the area of the pin 9, the diameter of which for receiving the Pin 9 and the sleeve 11 4.2 mm oetraσt. The?: Opp_ungsnetzwerJc 3 is thawed symmetrically, in such a way that all resonator surfaces are fed in the same phase from the coupling point 1 " . The coupling points 13 have an inner diameter of 1.2 mm and an outer diameter of 2.1 mm.
Ausgehend von jedem Kopplungspunkt 13 geht m Richtung des in der Zeile benachbarten Speisepunktes 13 ein Leiter 3a der Breite 0.49 mm für eine Lange von 27 mm ab. Dieser Leiter 3a geht dann sprungartig m einen Leiter 3b der Breite 1.15 mm über, welcher 31 mm lang ist. Anschließend geht der Leiter 3b wieder m eine Breite von 0.49 mm über, um den benachbarten Speisepunkt 13 nach einer Lange von 27 mm zu erreichen. Auf diese Weise werden die Speisepunkte der in jeder Zeile außen liegenden Resonatorflachen 4 mit den Speisepunkten 13 αer jeweils m der Zeile benachbarten und unten liegenden Resonatorflachen 4 verbunden. Von der Mitte des Leiters 3b schließt sich in Richtung des in der Spalte gegenüberliegenden Leiters 3b ein Leiter 3c der Breite 1.88 mm und der Lange 22.3 mm an, der danach sprungartig auf eine Breite von 1.15 mm für eine Strecke von 42.45 mm (Leiter 3d) übergeht. Der Leiter erweitert sich anschließend wieder auf eine Breite von 1.88 mm, um nach einer Lange von 22.3 mm mit der Mitte des m der Spalte gegenüberliegenden Leiters 3b zusammen zu treffen. An die Mitte des Leiters 3d schließt sich m Richtung des gegenüberliegenden Leiters 3d eine Leitung 3e der Breite 1.88 mm sowie der Lange 22.3 mm an. Danach geht der Leiter 3e auf eine Breite von 1.15 mm für eine Lange von 129.4 mm über (Leiter 3f) . Die Breite des Leiters 3f ändert sich auf 1.88 mm für eine Lange von 22.3 mm. Damit ist die Mitte des gegenüberliegenden Leiters 3d erreicht. Ar αie Mitte des Leiters 3f schließt ein Wellenleiter der Breite 1.88 mm sowie der Lange 22.3 mm an, um sich danacn εorungnaft m αer Breite auf 1.15 mm zu reduzieren und zum -._s-.opp-ungspunkt 21 des Netzwerkes 3 gefuhrt z„ werden.Starting from each coupling point 13, a conductor 3a with a width of 0.49 mm for a length of 27 mm goes out in the direction of the adjacent feed point 13 in the row. This conductor 3a then jumps into a conductor 3b with a width of 1.15 mm, which is 31 mm long. Then the conductor 3b m again has a width of 0.49 mm in order to reach the adjacent feed point 13 after a length of 27 mm. In this way, the feed points of the resonator surfaces 4 located on the outside in each line are connected to the feed points 13, respectively, of the resonator surfaces 4 that are adjacent to and below the line. A conductor 3c with a width of 1.88 mm and a length of 22.3 mm connects from the center of the conductor 3b in the direction of the conductor 3b opposite in the column, which then jumps to a width of 1.15 mm for a distance of 42.45 mm (conductor 3d) transforms. The conductor then widens again to a width of 1.88 mm in order to meet with the center of the conductor 3b opposite the column after a length of 22.3 mm. In the direction of the opposite conductor 3d, a line 3e with a width of 1.88 mm and a length of 22.3 mm is connected to the center of the conductor 3d. The conductor 3e then changes to a width of 1.15 mm for a length of 129.4 mm (conductor 3f). The width of the conductor 3f changes to 1.88 mm for a length of 22.3 mm. The center of the opposite conductor 3d is thus reached. The middle of the conductor 3f is followed by a waveguide with a width of 1.88 mm and a length of 22.3 mm, in order to reduce its width to 1.15 mm and to lead to the point of interruption 21 of the network 3 .
-l_tte-5 des coen oeschr_ebenen Kooolungsnetzwerks 3 werden die -"-αu^:i"en Blmdkomponenten der Stifte 9, die euren die der langl_.cren Stifte 9, welcne ihrerseits "ci der Dicke 12 der ersten dielektrischen Schicht 5 bedingt sind, kompensiert.-l_tte-5 of the coen oeschr_ebenen Kooolungsnetzwerk 3 become the - "- αu ^: i" en Blmd Components of the pins 9, yours the the langl_.cren pins 9, which in turn "ci the Thickness 12 of the first dielectric layer 5 are compensated.
In Figur " ist dargestellt, daß die Hülse 11 sich nicht über die gesamte Höhe der Schichten 5 und 6 erstrecken muß. Durch die Wahl der Wandstärke WS und der Lange LS der Hülse 11 kann deren kapazitiver Belag beeinflußt werden, wodurch die induktive Blindleistungskomponente des langen Stifts 9 aufgehoben wird und ein die Blindkomponenten kompensierendes Netzwerk 3 nicht mehr benötigt wird. It is shown in FIG. " That the sleeve 11 does not have to extend over the entire height of the layers 5 and 6. The choice of the wall thickness WS and the length LS of the sleeve 11 can influence its capacitive coating, as a result of which the inductive reactive power component of the long Pin 9 is canceled and a network 3 compensating for the blind components is no longer required.
Bezugszeichenliste:Reference symbol list:
1 Stahlerebene1 steel level
2 Netzwerkeoene2 network ports
3 Kopplungsnetzwerk3 coupling network
3a-3f Streifenleitungsabschnitte3a-3f stripline sections
4 Fiachenresonatoren4-fold resonators
5 erste dielektrische Schicht5 first dielectric layer
6 elektrisch leitende dünne Schicht; Masseflache6 electrically conductive thin layer; Ground plane
7 zweite dielektrische Schicht7 second dielectric layer
8 Mikrostreifenleitungen8 microstrip lines
9 Verbindungsstift9 connecting pin
10 fensterartige Aussparungen10 window-like recesses
11 Hülse11 sleeve
12 Speisepunkt des Flachenresonators12 feeding point of the flat resonator
13 Kopplungspunkt13 coupling point
14 erste Lage14 first layer
15 zweite Lage15 second layer
16 Wellenpfad16 wave path
17 gemeinsamer Kopplungspunkt17 common coupling point
18 Anschlußstuck; N-Buchse18 connector; N socket
19 Aussparung für Durchgangsstift19 Cut-out for through pin
20 Aussparung für Befestigungsschraube20 recess for fastening screw
21 Durchgangsstift21 through pin
22 Anpreßblock22 contact block
23 Bohrung für Befestigungsschrauben 2- Verlängerung für Wellenpfad 23 Hole for fastening screws 2- Extension for shaft path

Claims

Patentansprüche Patent claims
1. Pianarer Strahler mit einer Flächenresonatoren (4) aufweisenden Strahlerebene (1) und einer ein Kopplungsnetzwerk (3) aufweisenden Netzwerkebene (2), wobei die Flächenresonatoren (4) über das Kopplungsnetzwerk (3) miteinander galvanisch und phasengleich gekoppelt sind, d a d u r c h g e k e n n z e i c h n e t , daß1. Pianar radiator with a radiator level (1) having surface resonators (4) and a network level (2) having a coupling network (3), the surface resonators (4) being coupled to one another galvanically and in phase via the coupling network (3), so that
- der planare Strahler sandwich-artig aus zueinander planparallelen Schichten (4,5,6,7,8) aufgebaut ist, und- the planar radiator is constructed in a sandwich-like manner from plane-parallel layers (4,5,6,7,8), and
- daß eine erste dielektrische Schicht (5) mittels einer elektrisch leitenden dünnen Schicht (6) , welche die gemeinsame Massefläche für die Strahler- (1) und die Netzwerkebene - that a first dielectric layer (5) by means of an electrically conductive thin layer (6), which is the common ground surface for the radiator (1) and the network level
(2) bildet, von einer zweiten dielektrischen Schicht (7) getrennt ist, und(2) is separated from a second dielectric layer (7), and
- daß die erste dielektrische Schicht (5) an ihrer der elektrisch leitenden Schicht (6) abgewandten Seite die Fiachenresonatoren (4) trägt, und- that the first dielectric layer (5) carries the surface resonators (4) on its side facing away from the electrically conductive layer (6), and
- daß die zweite dielektrische Schicht (7) an ihrer der elektrisch leitenden Schicht (6) abgewandten Seite das Kopplungsnetzwerk (3) trägt, das aus Mikrostreifenleitungen- That the second dielectric layer (7) carries the coupling network (3), which consists of microstrip lines, on its side facing away from the electrically conductive layer (6).
(8) αebildet ist.(8) αe is formed.
r_onαi. Strahler nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t , daß jeder Flächenresonator (4)r_onαi. Radiator according to claim 1, characterized in that each surface resonator (4)
.ndungsεtifte;.foundation pins;
;m Koppiungsnstzwerk (3) in elektrisch leitender Verbindung =t, wobei der elektrisch leitende Verbindungsstift l9,ι m i.ner senkrecht zur Strahler- 1' und Metzwerkebene t2' ≥findlichen Durchgangsbohrung emiiegt. ;m coupling network (3) in an electrically conductive connection =t, whereby the electrically conductive connecting pin l9,ι is located in a through hole perpendicular to the radiator 1 ' and network plane t2' ≥.
3. Flanarer Strahler nach Anspruch 2, d a d u r c h g e k e n n z e i c h n e t , daß die elektrisch leitende dünne Schicht (6) m den Bereichen, wo die elektrisch leitenden Stifte (9) die Schicht (6) durchtreten, insbesondere -ireisformig fensterartige Aussparungen (10) hat, derart, daß die Stifte (9) mit der elektriscn leitenden Schient (6) nicht m elektrischer Verbindung sind.3. Flanar radiator according to claim 2, characterized in that the electrically conductive thin layer (6) in the areas where the electrically conductive pins (9) pass through the layer (6) has, in particular, ice-shaped window-like recesses (10), such that that the pins (9) are not electrically connected to the electrically conductive rail (6).
4. Planarer Strahler nach Anspruch 4, d a d u r c h g e k e n n z e i c h n e t , daß die kreisförmig fensterartigen Aussparungen (10) Blenden bilden, und mittels des Durchmessers der Aussparungen (10) der Reflektions- und Transmissionsfaktor zwischen dem Kopplungsnetzwerk und den jeweiligen Fiachenresonatoren einstellbar ist.4. Planar radiator according to claim 4, so that the circular window-like recesses (10) form apertures, and the reflection and transmission factor between the coupling network and the respective surface resonators can be adjusted by means of the diameter of the recesses (10).
5. Planarer Strahler nach einem der Ansprüche 2, 3 oder 4, d a d u r c h g e k e n n z e i c h n e t , daß jeder elektrisch leidende Stift (9) im Bereich zwischen der leitenden Schicht (6) der Flächenresonatoren (4) und der leitenden Schicht (6) der Mikrostreifenleitungen (8) zumindest abschnittsweise von einer Hülse (11) umschlossen ist.5. Planar radiator according to one of claims 2, 3 or 4, so that each electrically suffering pin (9) in the area between the conductive layer (6) of the surface resonators (4) and the conductive layer (6) of the microstrip lines (8) is at least partially enclosed by a sleeve (11).
6. Planarer Strahler nach Anspruch 5, d a d u r c h g e k e n n z e i c h n e t , daß die Hülse (11) aus einem dielektrischen Material insbesondere Teflon ist, dessen Dielektrizitätskonstante εr insbesondere größer ist als die Dielektrizitätskonstante εr des die Hülse (11) umgebenden Materials der dielektrischen Schichten (5,6. Planar radiator according to claim 5, characterized in that the sleeve (11) is made of a dielectric material, in particular Teflon, whose dielectric constant ε r is in particular greater than the dielectric constant ε r of the material of the dielectric layers (5) surrounding the sleeve (11).
7) .7).
~. Flanarer Strahler nach einem αer vcrnerigen Ansprucne, d a d u r c h g e k e n n z e i c h n e t , daß die erste dielektrische Schicht (5) aus zwei dielektrischen Materialien, die jeweils für sich eine Lage 14r 15) bilden, aufgebaut ist, ;oDeι die Dicke (LI) der ersten Lage großer ist, als die Dicke 12) cer zweiten Lage, wooei die zweite Lage (Ic; an ir.rer der ersten Lage (14/ abgewandten Seite die Resonatorflachen (4) tragt. ~ . Flanar radiator according to a previous claim, characterized in that the first dielectric layer (5) is made up of two dielectric materials, each of which forms a layer 14 r 15), oDeι the thickness (LI) of the first layer is larger , as the thickness 12) of the second layer, wooei the second layer (Ic; an ir.rer der first layer (14/facing side carries the resonator surfaces (4).
8. Flanarer Strahler nach Anspruch 7, d a d u r c h g e k e n n z e i c h n e t , daß die erste Lage (14) aus Polystyrol gebildet ist, welches m semer ausgesehaumten Form flexibel ist, und insbesondere ein spezifisches Volumengewicht von 20kg/m3 hat, wobei die erste Lage (14) insbesondere eine Dicke (LI) von 10.5 mm hat.8. Flanar radiator according to claim 7, characterized in that the first layer (14) is formed from polystyrene, which is flexible in its foamed shape, and in particular has a specific volume weight of 20kg / m 3 , the first layer (14) in particular has a thickness (LI) of 10.5 mm.
9. Planarer Strahler nach einem der Ansprüche 7 oder 8, d a d u r c h g e k e n n z e i c h n e t , daß die zweite9. Planar radiator according to one of claims 7 or 8, d a d u r c h g e k e n n z e i c h n e t that the second
Lage (15^ durch eine Polyethylenterephtalat-Folie msoesondere der Dicke (L2) gleich lOOum gebildet ist, die mit der ersten Lage (14) verklebt ist.Layer (15^ is formed by a polyethylene terephthalate film msoesonder with a thickness (L2) equal to lOOum, which is glued to the first layer (14).
10. Planarer Strahler nach einem der vorherigen Ansprüche, d a d u r c h g e k e n n z e i c h n e t , daß die elektrisch leitende dünne Schicht (6) eine Dicke von ca. 18μm hat.10. Planar radiator according to one of the preceding claims, so that the electrically conductive thin layer (6) has a thickness of approximately 18 μm.
11. Planarer Strahler nach einem der vorherigen Ansprüche, d a d u r c h g e k e n n z e i c h n e t , daß mittels geeigneter Wahl der Wandstarke (WS), der Hohe (LS) und der Dielektrizitatszahl εr der Hülse (11) die durch die Dicke (D2) der ersten dielektrischen Schicht (5) bedingte induktive 31ιndkcmconente mittels der Hülse (11) kompensierbar ist.11. Planar radiator according to one of the preceding claims, characterized in that by means of a suitable choice of the wall thickness (WS), the height (LS) and the dielectric constant ε r of the sleeve (11) through the thickness (D2) of the first dielectric layer (5 ) conditional inductive 31ιndkcmconente can be compensated for by means of the sleeve (11).
12. Flanarer Stranier nach Anspruch 10 oder 11, d a d u r c h g e k e n n z e i c h n e t , daß die Lange12. Flanarer Stranier according to claim 10 or 11, d a d u r c h g e k e n n z e i c h n e t that the length
LS) der Hülsen (11) den Abstand zwischen der Stahler- lλ und der Netzwerkebene (2; zumindest m den Bereichen der Iurengangsbohrungen (10) bzw. Stifte (9) auch unter Ξir.wirmr.g äußerer Kräfte -:or.star.t halt, sowie insbesondere für die Montage definierte -Auflagepunkte bildet. _1. F_anarer Strahler nacn einem oer vorherigen Ansprüche, d a d u r c h g e k e n n z e i c h n e t , daß mittels des Kopplur.gsnetzwerκs (3) die durch die Dicke (D2) der ersten diele<trιschen Schicht (5) bedingte induktive Blmdkomponente des Ξt-ftes (9) und der kapazitive Belag der Hülse (11) -compensieroar sind.LS) of the sleeves (11) the distance between the steel l λ and the network level (2; at least in the areas of the Iurengangbohrungen (10) or pins (9) even under Ξir.wirmr.g external forces -:or.star .t stop, as well as forming support points defined especially for assembly. _1. F_anar radiator according to one or the previous claims, characterized in that by means of the coupling network (3) the inductive blind component of the third layer (9) caused by the thickness (D2) of the first thin layer (5) and the capacitive coating of the Sleeve (11) -compensieroar are.
14. Planarer Strahler nach einem der vorherigen Ansprüche, d a d u r c h g e k e n n z e i c h n e t , daß die Fiachenresonatoren (4) rechteckig sind und matrixformig insbesondere m zwei Zeilen und vier Spalten angeordnet sind.14. Planar radiator according to one of the preceding claims, characterized in that the surface resonators (4) are rectangular and are arranged in a matrix form, in particular in two rows and four columns.
15. Planarer Strahler nach Ansprucn 14, d a d u r c h g e k e n n z e i c h n e t , daß die Zeilen- und Spaltenabstande der matnxformig angeordneten Fiachenresonatoren (4) gleich sind.15. Planar radiator according to claim 14, so that the row and column spacings of the surface resonators (4) arranged in a matnx shape are the same.
16. Planarer Strahler nach einem der vorherigen Ansprüche, d a d u r c h g e k e n n z e i c h n e t , daß die16. Planar radiator according to one of the preceding claims, d a d u r c h g e k e n n z e i c h n e t that the
Netzwerkebene (3) bestehend aus den Mikrostreifenleitungen (8), der zweiten dielektrischen Schicht (7) und der Masseflache (6), m Fcrm eines Wellenpfades (16) zwischen dem gemeinsamen Kopplungspunkt (17) und einem Anschlußstuck (18) derart verlängert ist, daß die wellenleiterseitige Kopplung ohne Trennung der Wellenleiterebene unmittelbar auf das Anschlußstuck (18) in koaxialer Ausfuhrung erfolgt. Network level (3) consisting of the microstrip lines (8), the second dielectric layer (7) and the ground plane (6), m Fcrm of a wave path (16) between the common coupling point (17) and a connecting piece (18) is extended in such a way, that the waveguide-side coupling takes place directly on the connecting piece (18) in a coaxial design without separating the waveguide plane.
EP97914238A 1996-03-16 1997-03-13 Planar emitter Expired - Lifetime EP0886887B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19615497A DE19615497A1 (en) 1996-03-16 1996-03-16 Planar radiator
DE19615497 1996-03-16
PCT/EP1997/001275 WO1997035355A1 (en) 1996-03-16 1997-03-13 Planar emitter

Publications (2)

Publication Number Publication Date
EP0886887A1 true EP0886887A1 (en) 1998-12-30
EP0886887B1 EP0886887B1 (en) 1999-09-22

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EP97914238A Expired - Lifetime EP0886887B1 (en) 1996-03-16 1997-03-13 Planar emitter

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US (1) US6204814B1 (en)
EP (1) EP0886887B1 (en)
JP (1) JP2000507055A (en)
KR (1) KR20000064587A (en)
CN (1) CN1214152A (en)
AT (1) ATE185023T1 (en)
CA (1) CA2250928C (en)
DE (2) DE19615497A1 (en)
GR (1) GR3031727T3 (en)
IL (1) IL126131A (en)
TW (1) TW355854B (en)
WO (1) WO1997035355A1 (en)

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Also Published As

Publication number Publication date
CA2250928A1 (en) 1997-09-25
WO1997035355A1 (en) 1997-09-25
CN1214152A (en) 1999-04-14
TW355854B (en) 1999-04-11
IL126131A0 (en) 1999-05-09
US6204814B1 (en) 2001-03-20
KR20000064587A (en) 2000-11-06
JP2000507055A (en) 2000-06-06
EP0886887B1 (en) 1999-09-22
DE19615497A1 (en) 1997-09-18
DE59700474D1 (en) 1999-10-28
GR3031727T3 (en) 2000-02-29
IL126131A (en) 2002-02-10
ATE185023T1 (en) 1999-10-15
CA2250928C (en) 2003-12-23

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