EP0881035A1 - Procédé pour l'usinage par enlèvement de matière du bord d'une plaquette semi-conductrice - Google Patents

Procédé pour l'usinage par enlèvement de matière du bord d'une plaquette semi-conductrice Download PDF

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Publication number
EP0881035A1
EP0881035A1 EP97115333A EP97115333A EP0881035A1 EP 0881035 A1 EP0881035 A1 EP 0881035A1 EP 97115333 A EP97115333 A EP 97115333A EP 97115333 A EP97115333 A EP 97115333A EP 0881035 A1 EP0881035 A1 EP 0881035A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor wafer
edge
tools
processing
editing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97115333A
Other languages
German (de)
English (en)
Other versions
EP0881035B1 (fr
Inventor
Alexander Rieger
Simon Ehrenschwendtner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of EP0881035A1 publication Critical patent/EP0881035A1/fr
Application granted granted Critical
Publication of EP0881035B1 publication Critical patent/EP0881035B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Definitions

  • the invention relates to a method for material-removing processing of the edge of a semiconductor wafer for the purpose of creating a smooth edge surface with a specific profile.
  • the untreated edge of a semiconductor wafer separated from a single crystal has a comparatively rough and non-uniform surface. It breaks out frequently under mechanical stress and is a source of disruptive particles. It is therefore common to smooth the edge and give it a certain profile. This is done by machining the edge with a suitable processing tool.
  • DE-195 35 616 A1 describes a grinding device with which such processing can be carried out.
  • the semiconductor wafer is fixed on a rotating table during processing and is fed with the edge against the likewise rotating work surface of a processing tool.
  • An advantage of this device is that it is suitable for being able to process the edge of the semiconductor wafer step by step with various processing tools.
  • the aim of the present invention is to remove the material Machining the edge of a semiconductor wafer even more effectively to design.
  • the invention relates to a method for material removal Machining the edge of a semiconductor wafer, wherein the semiconductor wafer rests on a rotating table, is rotated about a central axis and with a plurality is processed by rotating machining tools, and each of the editing tools a certain amount of material from the edge of the semiconductor wafer, that is characterized in that the machining tools in Course of a 360 ° rotation of the semiconductor wafer in succession against the edge of the semiconductor wafer and finally process the edge of the semiconductor wafer at the same time, and a machining tool that is just being delivered becomes a smaller amount from the edge of the wafer is to be removed as a previously delivered processing tool, and machining the edge of the wafer with a processing tool is ended at the earliest after the semiconductor wafer, from the delivery of this processing tool counted 360 degrees.
  • the process saves a tremendous amount of time since the machining the edge with various processing tools temporarily at the same time and after less than two Revolutions of the semiconductor wafer have already been completed can.
  • the processing tools used in the method are preferred designed as disks, which are attached to a spindle are and have peripheral surfaces that act as work surfaces serve to process the edge of the semiconductor wafer.
  • the peripheral surfaces can be curved to the spindle axis and form recesses corresponding to the desired edge profile.
  • several slices can lie on top of one another in a stack, being the same or different in the stack Processing tools can be summarized.
  • Preferred processing tools are grinding tools, polishing tools and tools for ductile grinding.
  • the material removing Abrasive grain from abrasive tools is normal firmly anchored in the working surface of the grinding tool. They are also impregnated with abrasive grain Wipes known in which the abrasive grain is less firmly embedded is. You can also use it to polish the edge of a semiconductor wafer be used. Create other polishing tools material removal in a chemical-mechanical manner, where appropriate, a polishing agent to the work surface of the Polishing tool must be fed.
  • Grinding tools with a sufficiently small grit and an extremely precise delivery, which is below a critical depth of penetration allowed (e.g. in Silicon is 100 nm (K.Puttik, Proc.
  • the material to be processed can be ductile (without Crack formation). With this ductile grinding particularly smooth surfaces can be created (M.Kerstan et al. in: Proc. American Soc. for Precision Engineering, Cincinatti 1994).
  • the amount of material removed by a machining tool when machining the edge of a semiconductor wafer is usually caused by specifying the thickness of the removed material layer expressed.
  • Two editing tools are different in the sense of the invention (similar) considered if they are different under the same conditions cause (same) material removal.
  • At Grinding tools determine the size of the abrasive grain used decisive is the material removal that the grinding tool should cause.
  • the material removal with a grinding tool usually larger be as the material removal that with a polishing tool or with a tool for ductile grinding becomes.
  • a semiconductor wafer is used to carry out the method fixed on a rotating table, a so-called chuck.
  • the edge of the semiconductor wafer protrudes over the edge of the Table out so that it is easily accessible for machining tools is. It is preferred that the table be the wafer holds and movable in a horizontal plane is stored so that the semiconductor wafer if necessary can be transported to the processing tools.
  • An indispensable feature of the invention is that two or several different processing tools are used and this during one revolution of the semiconductor wafer are fed to the edge one after the other.
  • the order of Delivery depends on the material removal, which is done with a processing tool is intended to achieve. First it will Machining tool delivered that the highest material removal should cause.
  • the infeed is then done with the processing tool continued, the next lower material removal is supposed to cause, and so on.
  • the method could be used to work with two grinding tools a rough and a fine sanding of the edge of a semiconductor wafer to be carried out at the same time at least temporarily.
  • the edge could be machined with tools that are in appropriate order can be used in one operation honed and polished, or honed and ductile be sanded.
  • a preferred embodiment of the method provides that processing tools that are adjacent after delivery are turning in opposite directions. This is to avoid that loose material being flung away by a machining tool from the neighboring machining tool to Edge of the semiconductor wafer is transported back. Further it is appropriate to insert the edge in at least one place liquid detergent, optionally with Ultra or Megasound is applied to feed.
  • the supply of detergent preferably takes place at one point on the edge, which has already been processed by a grinding tool and shortly before processing by a polishing tool or a Tool for ductile grinding is available.
  • All processing tools used are fed in during a 360 ° rotation of the semiconductor wafer.
  • All processing tools have been delivered, they process the edge of the semiconductor wafer at the same time.
  • the processing of the edge of the semiconductor wafer with a specific processing tool is ended at the earliest after the semiconductor wafer has rotated through 360 ° from the infeed of this processing tool.
  • the smoothing angle ⁇ need only be a few degrees. This ensures that a step that may have formed on the surface of the edge when the machining tool is engaged is removed.
  • the end of the processing of the edge of the semiconductor wafer with a processing tool is brought about by withdrawing this processing tool from the edge.
  • the processing tools can be withdrawn at the same time or in the order in which the processing tools were delivered against the edge.
  • the sequence of the method is shown below using a figure using the example of the use of three different processing tools explained in more detail.
  • the figure shows schematically the top view of a semiconductor wafer and the three various editing tools with which the edge the semiconductor wafer is processed. They are just such Features shown to understand the invention contribute.
  • the semiconductor wafer is transported along a y-axis to a processing position.
  • a table on which the semiconductor wafer 4 is fixed rotates it around a central axis M at a specific feed rate.
  • the processing of the edge 5 of the semiconductor wafer 4 begins with the infeed of a first processing tool 1 along a y 1 axis.
  • the machining tool 1 rotating about an axis N engages with its working surface 6 in a contact zone I in the edge 5 of the semiconductor wafer 4.
  • a second machining tool 2 which rotates about an axis O, is delivered as the next machining tool along a y 2 axis. With its working surface 7, it takes up the processing of the edge 5 in a contact zone II.
  • the semiconductor wafer rotates by the feed angle ⁇ 1.
  • This marks the position of the contact zone II and has the value ⁇ 1 90 ° in the example shown.
  • a third machining tool 3 which rotates about an axis P, is finally delivered along a y 3 axis.
  • a device 8 for supplying a cleaning agent R, for example a megasonic nozzle, is located between the processing tool 2 and the processing tool 3.
  • the machining tool 3 takes up the machining of the edge 5 in a contact zone III with its working surface 9.
  • the semiconductor wafer rotates by the feed angle ⁇ 1 + ⁇ 2 .
  • This marks the position of contact zone III and has the value in the example shown ⁇ 1 + ⁇ 2nd 180 ° .
  • each additional processing tool n (not shown in the figure) would be fed along a y n axis and the processing of the edge would start in a contact zone X n .
  • the location of the contact zone X n would again result from the feed angle by which the semiconductor wafer rotates between the infeed of the first and the infeed of the nth machining tool.
  • the processing tool 3 is withdrawn along the y 3 axis from the edge 5 of the semiconductor wafer after the semiconductor wafer has made a rotation of 360 ° and the smoothing angle ⁇ since the delivery of this processing tool. If the processing tools 1 and 2 have not yet been withdrawn from the edge by this time, they are withdrawn along the y 1 and y 2 axes simultaneously with the withdrawal of the treatment tool 3. Then the table on which the semiconductor wafer is placed is moved along the y-axis to an unloading position, and the semiconductor wafer 4 is replaced by another with a not yet processed edge for a new processing cycle.
  • the diameter of the machining tools also plays an important role in minimizing the duration of machining the edge of a semiconductor wafer.
  • the semiconductor wafer rotates through a certain total feed angle during the processing of the edge. The smaller this total feed angle, the shorter the processing time.
  • the preferred total feed angle is made up of a feed angle around which the semiconductor wafer rotates (counting from the infeed of the processing tool delivered first) until all processing tools have been delivered and the previously mentioned feed angle of 360 ° + ⁇ , around which the semiconductor wafer then turns until the end of processing.
  • the value of the feed angle mentioned first depends on the distances between the machining tools and thus also on the diameter of the machining tools.
  • the distance between adjacent processing tools can be specified by an offset angle.
  • the offset angle between the machining tool 1 and the machining tool 2 corresponds to the feed angle ⁇ 1 and is 90 °.
  • the offset angle between the machining tool 2 and the machining tool 3 corresponds to ⁇ 2 and also has the value of 90 °.
  • the semiconductor wafer has rotated by a feed angle of 180 °.
  • the processing of the semiconductor wafer would accordingly take a total of the time required for the rotation of the semiconductor wafer by an overall feed angle of 180 ° + 360 ° + ⁇ corresponds. Small offset angles are possible when using machining tools with smaller diameters.
  • the diameters of the machining tools 1 to 3 and the offset angles between them could be selected such that these tools can be advanced by a feed angle of 90 ° while the semiconductor wafer is rotating. Then the processing of the semiconductor wafer would only take the time that a rotation of the semiconductor wafer by a total feed angle of 90 ° + 360 ° + ⁇ corresponds. It is therefore preferred to use machining tools with small diameters as far as possible and to keep the offset angles between the machining tools as small as possible. However, it should also be borne in mind that machining tools with relatively small diameters also have smaller work surfaces and therefore wear out earlier.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
EP97115333A 1996-09-05 1997-09-04 Procédé pour l'usinage par enlèvement de matière du bord d'une plaquette semi-conductrice Expired - Lifetime EP0881035B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19636055 1996-09-05
DE19636055A DE19636055A1 (de) 1996-09-05 1996-09-05 Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe

Publications (2)

Publication Number Publication Date
EP0881035A1 true EP0881035A1 (fr) 1998-12-02
EP0881035B1 EP0881035B1 (fr) 1999-10-27

Family

ID=7804717

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97115333A Expired - Lifetime EP0881035B1 (fr) 1996-09-05 1997-09-04 Procédé pour l'usinage par enlèvement de matière du bord d'une plaquette semi-conductrice

Country Status (6)

Country Link
US (1) US6045436A (fr)
EP (1) EP0881035B1 (fr)
JP (1) JP2900253B2 (fr)
KR (1) KR100273960B1 (fr)
DE (2) DE19636055A1 (fr)
TW (1) TW352354B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19928949A1 (de) * 1999-06-24 2001-01-04 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11320363A (ja) * 1998-05-18 1999-11-24 Tokyo Seimitsu Co Ltd ウェーハ面取り装置
DE19841492A1 (de) * 1998-09-10 2000-03-23 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Abtrennen einer Vielzahl von Scheiben von einem sprödharten Werkstück
JP3510584B2 (ja) * 2000-11-07 2004-03-29 スピードファム株式会社 円板形ワークの外周研磨装置
US20020058466A1 (en) * 2000-11-13 2002-05-16 Curran David M. Method and system for reducing thickness of spin-on glass on semiconductor wafers
US6860795B2 (en) * 2001-09-17 2005-03-01 Hitachi Global Storage Technologies Netherlands B.V. Edge finishing process for glass or ceramic disks used in disk drive data storage devices
DE10147646C1 (de) * 2001-09-27 2002-12-19 Wacker Siltronic Halbleitermat Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe
US20070298240A1 (en) * 2006-06-22 2007-12-27 Gobena Feben T Compressible abrasive article
US9676114B2 (en) * 2012-02-29 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer edge trim blade with slots
KR101414204B1 (ko) * 2013-01-30 2014-07-01 주식회사 엘지실트론 웨이퍼 에지 그라인딩 장치 및 웨이퍼 에지 그라인딩 방법
JP2014226767A (ja) * 2013-05-27 2014-12-08 株式会社東京精密 ウェーハ面取り装置及びウェーハ面取り方法
JP7222636B2 (ja) * 2018-09-12 2023-02-15 株式会社ディスコ エッジトリミング装置
CN110605629B (zh) * 2019-09-19 2022-11-18 西安奕斯伟材料科技有限公司 一种研磨装置
CN114643519B (zh) * 2022-03-26 2022-12-09 浙江金连接科技股份有限公司 一种半导体芯片测试探针用钯合金套桶及其加工设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60104644A (ja) * 1983-11-08 1985-06-10 Mitsubishi Metal Corp ウエハ−の外周研削・面取装置
EP0308134A2 (fr) * 1987-09-14 1989-03-22 Speedfam Co., Ltd. Appareil d'usinage miroitant pour une partie formant l'arête périphérique d'une plaquette
EP0663264A1 (fr) * 1994-01-04 1995-07-19 Texas Instruments Incorporated Procédé et dispositif de polissage du bord d'une plaquette semi-conductrice

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0185234B1 (ko) * 1991-11-28 1999-04-15 가부시키 가이샤 토쿄 세이미쯔 반도체 웨이퍼의 모떼기 방법
JP2628424B2 (ja) * 1992-01-24 1997-07-09 信越半導体株式会社 ウエーハ面取部の研磨方法及び装置
JPH07205001A (ja) * 1993-11-16 1995-08-08 Tokyo Seimitsu Co Ltd ウェーハ面取り機
JP3010572B2 (ja) * 1994-09-29 2000-02-21 株式会社東京精密 ウェーハエッジの加工装置
US5816897A (en) * 1996-09-16 1998-10-06 Corning Incorporated Method and apparatus for edge finishing glass
US5725414A (en) * 1996-12-30 1998-03-10 Intel Corporation Apparatus for cleaning the side-edge and top-edge of a semiconductor wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60104644A (ja) * 1983-11-08 1985-06-10 Mitsubishi Metal Corp ウエハ−の外周研削・面取装置
EP0308134A2 (fr) * 1987-09-14 1989-03-22 Speedfam Co., Ltd. Appareil d'usinage miroitant pour une partie formant l'arête périphérique d'une plaquette
EP0663264A1 (fr) * 1994-01-04 1995-07-19 Texas Instruments Incorporated Procédé et dispositif de polissage du bord d'une plaquette semi-conductrice

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KISELEV E S ET AL: "MACHINING TECHNOLOGY THE EFFICIENCY OF THE ULTRASONIC DEVICES USED TO FEED CUTTING FLUID IN GRINDING WORKPIECES AND DRESSING ABRASIVE WHEELS", RUSSIAN ENGINEERING RESEARCH, vol. 15, no. 2, 1 February 1995 (1995-02-01), pages 76 - 83, XP000552057 *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 252 (M - 420) 9 October 1985 (1985-10-09) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19928949A1 (de) * 1999-06-24 2001-01-04 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe

Also Published As

Publication number Publication date
DE59700621D1 (de) 1999-12-02
DE19636055A1 (de) 1998-03-12
US6045436A (en) 2000-04-04
JP2900253B2 (ja) 1999-06-02
KR19980024185A (ko) 1998-07-06
TW352354B (en) 1999-02-11
JPH1080849A (ja) 1998-03-31
KR100273960B1 (ko) 2001-01-15
EP0881035B1 (fr) 1999-10-27

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