EP0875968A3 - Semiconductor optical device and method of manufacturing the same - Google Patents

Semiconductor optical device and method of manufacturing the same Download PDF

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Publication number
EP0875968A3
EP0875968A3 EP98108072A EP98108072A EP0875968A3 EP 0875968 A3 EP0875968 A3 EP 0875968A3 EP 98108072 A EP98108072 A EP 98108072A EP 98108072 A EP98108072 A EP 98108072A EP 0875968 A3 EP0875968 A3 EP 0875968A3
Authority
EP
European Patent Office
Prior art keywords
region
facet
spot
optical device
semiconductor optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98108072A
Other languages
German (de)
French (fr)
Other versions
EP0875968A2 (en
Inventor
Yuji Furushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0875968A2 publication Critical patent/EP0875968A2/en
Publication of EP0875968A3 publication Critical patent/EP0875968A3/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A semiconductor optical device has a gain region for oscillating a laser light beam and a spot-size conversion region for converting a spot-size of the laser light beam emitted from the gain region. Further, an optical waveguide (3) is formed by the use of a selective growth mask (2) along the gain region and the spot-size conversion region. With such a structure, the optical waveguide (3) includes a waveguide taper region (5) and has a width (W0) and a facet. In this event, the width (W0) gradually becomes narrower towards the facet. As a result, the waveguide taper region (5) is tapered along a direction from the gain region towards the facet.
Figure 00000001
Figure 00000002
EP98108072A 1997-05-02 1998-05-04 Semiconductor optical device and method of manufacturing the same Withdrawn EP0875968A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP114559/97 1997-05-02
JP11455997 1997-05-02
JP09114559A JP3104789B2 (en) 1997-05-02 1997-05-02 Semiconductor optical device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
EP0875968A2 EP0875968A2 (en) 1998-11-04
EP0875968A3 true EP0875968A3 (en) 2001-05-23

Family

ID=14640848

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98108072A Withdrawn EP0875968A3 (en) 1997-05-02 1998-05-04 Semiconductor optical device and method of manufacturing the same

Country Status (3)

Country Link
US (2) US6219366B1 (en)
EP (1) EP0875968A3 (en)
JP (1) JP3104789B2 (en)

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CN110233421A (en) * 2019-07-10 2019-09-13 中国工程物理研究院应用电子学研究所 A kind of tapered semiconductor laser based on annular outer-cavity

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1075011A (en) * 1996-08-30 1998-03-17 Sony Corp Semiconductor laser
JP2000193921A (en) * 1998-12-28 2000-07-14 Nec Corp Modulator integrated laser module
JP3323844B2 (en) * 1999-01-18 2002-09-09 キヤノン株式会社 gyro
JP2000216495A (en) 1999-01-26 2000-08-04 Nec Corp Manufacture of semiconductor optical element
KR100433298B1 (en) * 1999-02-08 2004-05-27 삼성전자주식회사 Fabricating method of spot-size converter semiconductor optical amplifier
US6528337B1 (en) * 1999-04-08 2003-03-04 The Furukawa Electric Co., Ltd. Process of producing semiconductor layer structure
US6665330B1 (en) 1999-09-14 2003-12-16 Canon Kabushiki Kaisha Semiconductor device having a semiconductor ring laser with a circularly formed ridge optical waveguide
JP4570712B2 (en) * 1999-10-14 2010-10-27 Ｏｋｉセミコンダクタ株式会社 Semiconductor waveguide device and manufacturing method thereof
US6363188B1 (en) * 1999-10-22 2002-03-26 Princeton Lightwave, Inc. Mode expander with co-directional grating
KR100406865B1 (en) * 1999-11-04 2003-11-21 삼성전자주식회사 Double core spot size converter using selective area growth and fabricating method thereof
JP2001159521A (en) 1999-12-01 2001-06-12 Canon Inc Angular velocity detecting device
JP2001168467A (en) * 1999-12-14 2001-06-22 Nec Corp Manufacturing method for semiconductor laser
DE10004399A1 (en) * 2000-02-02 2001-08-16 Infineon Technologies Ag Edge-emitting, ridge waveguide (RWG) laser-diode - has insulating layer made of electrically insulating material and placed on either side of active layer in each barrier layer
JP4471522B2 (en) * 2000-03-15 2010-06-02 浜松ホトニクス株式会社 Condensing component and light source module, laser device and optical signal amplification device using the same
JP3941334B2 (en) * 2000-04-20 2007-07-04 株式会社日立製作所 Optical transmission module and optical communication system using the same
JP2001358405A (en) * 2000-06-14 2001-12-26 Nec Corp Semiconductor laser device and its manufacturing method
US6643309B1 (en) 2000-07-05 2003-11-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
KR100358133B1 (en) * 2000-12-30 2002-10-25 한국전자통신연구원 A method for fabricating lateral-tapered waveguide using strain relaxation pad, method for fabricating spot size-converter using thereof and optic device using thereof
KR100369329B1 (en) * 2001-03-05 2003-01-24 주식회사 케이티 Fabrication method of defectless and anti-reflection spot size converted optical devices
JP4026334B2 (en) * 2001-07-30 2007-12-26 株式会社日立製作所 Semiconductor laser, distributed feedback semiconductor laser, and wavelength tunable semiconductor laser
JP3786054B2 (en) * 2001-09-07 2006-06-14 日本電気株式会社 Semiconductor optical device and semiconductor laser
JP2003258383A (en) * 2001-12-27 2003-09-12 Fuji Photo Film Co Ltd Gallium nitride-based semiconductor laser and image aligner
US6989284B2 (en) * 2002-05-31 2006-01-24 Intel Corporation Fabrication of a waveguide taper through ion implantation
US6813432B2 (en) * 2002-05-31 2004-11-02 Intel Corporation Method for producing vertical tapers in optical waveguides by over polishing
US6956983B2 (en) * 2002-05-31 2005-10-18 Intel Corporation Epitaxial growth for waveguide tapering
US7120336B2 (en) * 2002-08-29 2006-10-10 Micron Technology, Inc. Resonator for thermo optic device
US7006746B2 (en) * 2002-08-29 2006-02-28 Micron Technology, Inc. Waveguide for thermo optic device
US7020365B2 (en) * 2002-08-29 2006-03-28 Micron Technology, Inc. Resistive heater for thermo optic device
US7301979B2 (en) * 2003-05-22 2007-11-27 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
KR100520796B1 (en) * 2003-10-20 2005-10-13 한국전자통신연구원 Method for manufacturing semiconductor optical amplifier having planar buried heteostructure
US7037739B2 (en) * 2004-01-06 2006-05-02 Korea Institute Of Science And Technology Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
US7184640B2 (en) * 2004-02-25 2007-02-27 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Buried heterostructure device fabricated by single step MOCVD
US7440666B2 (en) * 2004-02-25 2008-10-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD
JP4575013B2 (en) * 2004-03-29 2010-11-04 住友電気工業株式会社 Method for manufacturing optoelectronic integrated device
JP2005286196A (en) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd Optically integrated device
JP2005286192A (en) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd Optically integrated device
KR100651477B1 (en) 2005-01-19 2006-11-29 삼성전자주식회사 Fabricating method of semiconductor laser and semiconductor laser
KR100738530B1 (en) * 2005-07-21 2007-07-11 삼성전자주식회사 semiconductor laser with spot-size converter and method for fabricating the same
KR100759805B1 (en) * 2005-12-07 2007-09-20 한국전자통신연구원 Optically boosted elctroabsorption duplexer
KR100754597B1 (en) * 2006-01-03 2007-09-05 삼성전자주식회사 Laser with spot size converter and method for fabricating the same
JP4847176B2 (en) * 2006-03-29 2011-12-28 住友大阪セメント株式会社 Light control element and manufacturing method thereof
US7763485B1 (en) 2006-05-15 2010-07-27 Finisar Corporation Laser facet pre-coating etch for controlling leakage current
US7606279B1 (en) 2006-05-15 2009-10-20 Finisar Corporation Thin INP spacer layer in a high speed laser for reduced lateral current spreading
US8277877B1 (en) 2006-05-15 2012-10-02 Finisar Corporation Method for applying protective laser facet coatings
US8034648B1 (en) * 2006-05-15 2011-10-11 Finisar Corporation Epitaxial regrowth in a distributed feedback laser
US7573925B1 (en) 2006-05-15 2009-08-11 Finisar Corporation Semiconductor laser having a doped active layer
US7567601B1 (en) 2006-05-15 2009-07-28 Finisar Corporation Semiconductor laser having low stress passivation layer
JP2008034614A (en) * 2006-07-28 2008-02-14 Sharp Corp Semiconductor laser element, and manufacturing method therefor
KR101374932B1 (en) * 2007-09-28 2014-03-17 재단법인서울대학교산학협력재단 The method for laterally graded porous optical filter by diffusion limited etch process and structure using thereof
JP2009283605A (en) * 2008-05-21 2009-12-03 Mitsubishi Electric Corp Semiconductor laser
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JP4444368B1 (en) 2009-07-30 2010-03-31 古河電気工業株式会社 Integrated semiconductor laser device, semiconductor laser module, and optical transmission system
TWI550900B (en) * 2009-09-16 2016-09-21 津湧科技股份有限公司 Semiconductor device layer and fabricating method thereof
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CN103221856B (en) * 2010-11-22 2016-01-20 日立化成株式会社 Optical waveguide
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DE102016113071A1 (en) * 2016-07-15 2018-01-18 Osram Opto Semiconductors Gmbh Semiconductor laser diode
JP6146554B1 (en) * 2017-01-19 2017-06-14 三菱電機株式会社 Optical modulator integrated semiconductor laser
US11245248B2 (en) * 2018-01-10 2022-02-08 Sony Semiconductor Solutions Corporation Semiconductor laser
US11552451B2 (en) 2018-05-28 2023-01-10 Mitsubishi Electric Corporation Semiconductor laser device
JP2021012990A (en) * 2019-07-09 2021-02-04 住友電気工業株式会社 Quantum cascade laser
DE102019118993A1 (en) * 2019-07-12 2021-01-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung EDGE-EMITTING SEMI-CONDUCTIVE LASER DIODE AND METHOD FOR MANUFACTURING SUCH

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641049A1 (en) * 1993-08-31 1995-03-01 Fujitsu Limited An optical semiconductor device and a method of manufacturing the same
EP0680119A1 (en) * 1994-04-28 1995-11-02 Nec Corporation Fabrication process for semiconductor optical device
DE19538648A1 (en) * 1994-10-17 1996-04-18 Mitsubishi Electric Corp Integrated waveguide device and manufacturing method therefor
JPH08125279A (en) * 1994-10-27 1996-05-17 Nec Corp Tapered waveguide integrated semiconductor laser and manufacture thereof

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585957A (en) * 1993-03-25 1996-12-17 Nippon Telegraph And Telephone Corporation Method for producing various semiconductor optical devices of differing optical characteristics
JP3548986B2 (en) 1994-02-15 2004-08-04 富士通株式会社 Optical semiconductor device and method of manufacturing the same
JP2682421B2 (en) 1993-12-28 1997-11-26 日本電気株式会社 Method for manufacturing semiconductor optical integrated circuit
US5844929A (en) * 1994-02-24 1998-12-01 British Telecommunications Public Limited Company Optical device with composite passive and tapered active waveguide regions
JP2687891B2 (en) 1994-08-29 1997-12-08 日本電気株式会社 Tunable semiconductor laser
EP0692853B1 (en) 1994-07-15 1998-09-30 Nec Corporation Wavelength-tunable semiconductor laser
JP2842292B2 (en) 1994-09-16 1998-12-24 日本電気株式会社 Semiconductor optical integrated device and manufacturing method
EP1271625A3 (en) * 1994-12-27 2007-05-16 Fujitsu Limited Method of fabrication compound semiconductor device
JPH08307012A (en) * 1995-05-01 1996-11-22 Mitsubishi Electric Corp Mask for selective growth, manufacture of semiconductor optical device, and semiconductor optical device
JPH08330673A (en) * 1995-06-02 1996-12-13 Fujitsu Ltd Optical semiconductor device
JPH0923036A (en) 1995-07-05 1997-01-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US6198863B1 (en) * 1995-10-06 2001-03-06 British Telecommunications Public Limited Company Optical filters
JPH1075011A (en) * 1996-08-30 1998-03-17 Sony Corp Semiconductor laser
US5870417A (en) * 1996-12-20 1999-02-09 Sdl, Inc. Thermal compensators for waveguide DBR laser sources
JPH11112081A (en) * 1997-10-01 1999-04-23 Mitsubishi Electric Corp Semiconductor laser and manufacture thereof
US6014396A (en) * 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
US6229947B1 (en) * 1997-10-06 2001-05-08 Sandia Corporation Tapered rib fiber coupler for semiconductor optical devices
US6052397A (en) * 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
US6167073A (en) * 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement
US6310995B1 (en) * 1998-11-25 2001-10-30 University Of Maryland Resonantly coupled waveguides using a taper
US6162655A (en) * 1999-01-11 2000-12-19 Lucent Technologies Inc. Method of fabricating an expanded beam optical waveguide device
US6445724B2 (en) * 2000-02-23 2002-09-03 Sarnoff Corporation Master oscillator vertical emission laser
AU2001252891A1 (en) * 2000-02-29 2001-09-12 The Regents Of The University Of California Ultra-compact room temperature rapidly tunable infrared sources
US6636547B2 (en) * 2000-04-28 2003-10-21 Photodigm, Inc. Multiple grating-outcoupled surface-emitting lasers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641049A1 (en) * 1993-08-31 1995-03-01 Fujitsu Limited An optical semiconductor device and a method of manufacturing the same
EP0680119A1 (en) * 1994-04-28 1995-11-02 Nec Corporation Fabrication process for semiconductor optical device
DE19538648A1 (en) * 1994-10-17 1996-04-18 Mitsubishi Electric Corp Integrated waveguide device and manufacturing method therefor
JPH08125279A (en) * 1994-10-27 1996-05-17 Nec Corp Tapered waveguide integrated semiconductor laser and manufacture thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHO H S ET AL: "UNBALANCED FACET OUTPUT POWER AND LARGE SPOT SIZE IN 1.3MUM TAPERED ACTIVE STRIPE LASERS", ELECTRONICS LETTERS,IEE STEVENAGE,GB, vol. 33, no. 9, 24 April 1997 (1997-04-24), pages 781 - 782, XP000695329, ISSN: 0013-5194 *
FUKANO H ET AL: "1.3MUM LARGE SPOT-SIZE LASER DIODES WITH LATERALLY TAPERED ACTIVE LAYER", ELECTRONICS LETTERS,IEE STEVENAGE,GB, vol. 31, no. 17, 17 August 1995 (1995-08-17), pages 1439 - 1440, XP000528966, ISSN: 0013-5194 *
ITAYA Y ET AL: "SPOT-SIZE CONVERTER INTEGRATED LASER DIODES (SS-LDS)", IEICE TRANSACTIONS ON ELECTRONICS,JP,INSTITUTE OF ELECTRONICS INFORMATION AND COMM. ENG. TOKYO, vol. E80-C, no. 1, 1997, pages 30 - 40, XP000740602, ISSN: 0916-8524 *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 09 30 September 1996 (1996-09-30) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110233421A (en) * 2019-07-10 2019-09-13 中国工程物理研究院应用电子学研究所 A kind of tapered semiconductor laser based on annular outer-cavity
CN110233421B (en) * 2019-07-10 2020-08-04 中国工程物理研究院应用电子学研究所 Conical semiconductor laser based on annular outer cavity

Also Published As

Publication number Publication date
US20010010701A1 (en) 2001-08-02
US6465269B2 (en) 2002-10-15
JPH10308556A (en) 1998-11-17
EP0875968A2 (en) 1998-11-04
US6219366B1 (en) 2001-04-17
JP3104789B2 (en) 2000-10-30

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