JP6146554B1 - Optical modulator integrated semiconductor laser - Google Patents

Optical modulator integrated semiconductor laser Download PDF

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JP6146554B1
JP6146554B1 JP2017514368A JP2017514368A JP6146554B1 JP 6146554 B1 JP6146554 B1 JP 6146554B1 JP 2017514368 A JP2017514368 A JP 2017514368A JP 2017514368 A JP2017514368 A JP 2017514368A JP 6146554 B1 JP6146554 B1 JP 6146554B1
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optical modulator
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JPWO2018134940A1 (en
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和久 高木
和久 高木
崇 柳楽
崇 柳楽
斎藤　健
健 斎藤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract

半導体レーザ（１）と電界吸収型光変調器（２）が集積されている。半導体レーザ（１）はレーザ光を出射する。電界吸収型光変調器（２）はレーザ光を変調する。電界吸収型光変調器（２）において、第１導電型半導体層（４）、光導波路コア層（１０）及び第２導電型半導体層（６）が順に積層されている。第１の電極（８）が第１導電型半導体層（４）の下に形成されている。第２の電極（１１）が光導波路コア層（１０）の真上において第２導電型半導体層（６）の上に形成されている。第１の電極（８）と第２の電極（１１）との間に印加する電圧によって光導波路コア層（１０）の光吸収係数が変化する。光導波路コア層（１０）の幅は、電界吸収型光変調器（２）の光出射端に向かって漸減する。A semiconductor laser (1) and an electroabsorption optical modulator (2) are integrated. The semiconductor laser (1) emits laser light. The electroabsorption optical modulator (2) modulates the laser light. In the electroabsorption optical modulator (2), a first conductive semiconductor layer (4), an optical waveguide core layer (10), and a second conductive semiconductor layer (6) are sequentially stacked. A first electrode (8) is formed under the first conductivity type semiconductor layer (4). A second electrode (11) is formed on the second conductivity type semiconductor layer (6) just above the optical waveguide core layer (10). The light absorption coefficient of the optical waveguide core layer (10) varies depending on the voltage applied between the first electrode (8) and the second electrode (11). The width of the optical waveguide core layer (10) gradually decreases toward the light exit end of the electroabsorption optical modulator (2).

Description

本発明は、光変調器集積半導体レーザに関する。   The present invention relates to an optical modulator integrated semiconductor laser.

光ファイバ通信装置の送信用光源として光変調器集積半導体レーザが用いられている（例えば、特許文献１〜４参照）。電界吸収型光変調器（ＥＡＭ）と集積半導体レーザ（ＥＭＬ）に加えて、出射光の光ビーム径、即ちスポットサイズを拡大するスポットサイズ変換器（ＳＳＣ）を集積した光変調器集積半導体レーザも提案されている（例えば、非特許文献１参照）。このレーザでは、光変調器のコア層の出射端にスポットサイズ変換機能を有する透明導波路コア層がバットジョイントにより接続されている。   An optical modulator integrated semiconductor laser is used as a light source for transmission in an optical fiber communication device (see, for example, Patent Documents 1 to 4). In addition to the electroabsorption optical modulator (EAM) and the integrated semiconductor laser (EML), there is also an optical modulator integrated semiconductor laser in which a light beam diameter of the emitted light, that is, a spot size converter (SSC) for expanding the spot size is integrated. It has been proposed (see Non-Patent Document 1, for example). In this laser, a transparent waveguide core layer having a spot size conversion function is connected to the emission end of the core layer of the optical modulator by a butt joint.

日本特開平１０−３０８５５６号公報Japanese Unexamined Patent Publication No. 10-308556 日本特開２００５−２３４３１９号公報Japanese Unexamined Patent Publication No. 2005-234319 日本特開２０１６−１５６９２８号公報Japanese Unexamined Patent Publication No. 2006-156928 日本特開２０１５−０４５７８９号公報Japanese Unexamined Patent Publication No. 2015-045789

1.3 μm 28 Gb/s EMLs with hybrid waveguide structure for low-power-consumption CFP2 transceivers Yoshimichi Morita; Takeshi Yamatoya; Yohei Hokama; Koichi Akiyama; Ryoko Makita; Nobuyuki Yasui; Daisuke Morita; Hiroyuki Kawahara; Eitaro Ishimura 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC)1.3 μm 28 Gb / s EMLs with hybrid waveguide structure for low-power-consumption CFP2 transceivers Yoshimichi Morita; Takeshi Yamatoya; Yohei Hokama; Koichi Akiyama; Ryoko Makita; Nobuyuki Yasui; Daisuke Morita; Hiroyuki Kawahara; Eitaro Ishimura 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC / NFOEC)

しかし、光変調器とスポットサイズ変換器の接続部において光導波路の実効屈折率の虚部の値が合致しない。このため、半導体レーザへの反射戻り光が発生し、伝送特性の劣化が生じていた。   However, the value of the imaginary part of the effective refractive index of the optical waveguide does not match at the connection between the optical modulator and the spot size converter. For this reason, reflected return light to the semiconductor laser is generated, and transmission characteristics are deteriorated.

本発明は、上述のような課題を解決するためになされたもので、その目的は伝送品質を改善することができる光変調器集積半導体レーザを得るものである。   The present invention has been made to solve the above-described problems, and an object thereof is to obtain an optical modulator integrated semiconductor laser capable of improving transmission quality.

本発明に係る光変調器集積半導体レーザは、レーザ光を出射する半導体レーザと、前記半導体レーザと集積され、前記レーザ光を変調する電界吸収型光変調器と、埋込層と、透明導波路コア層とを備え、前記電界吸収型光変調器は、順に積層された第１導電型半導体層、光導波路コア層及び第２導電型半導体層と、前記第１導電型半導体層の下に形成された第１の電極と、前記光導波路コア層の真上において前記第２導電型半導体層の上に形成された第２の電極とを有し、前記第１の電極と前記第２の電極との間に印加する電圧によって前記光導波路コア層の光吸収係数が変化し、前記光導波路コア層の幅は、前記電界吸収型光変調器の光出射端に向かって漸減し、前記埋込層は前記光導波路コア層の両サイドを埋め込み、前記透明導波路コア層は前記光導波路コア層の周囲に形成され前記光導波路コア層に接触し、前記透明導波路コア層の真上において前記第２の電極は形成されていないか、又は前記第２導電型半導体層に接触しておらず、前記透明導波路コア層の屈折率は、前記埋込層の屈折率と前記光導波路コア層の屈折率との間の値であり、前記透明導波路コア層のバンドギャップエネルギーは、前記光導波路コア層のバンドギャップエネルギーよりも大きいことを特徴とする。
An optical modulator integrated semiconductor laser according to the present invention includes a semiconductor laser that emits laser light, an electroabsorption optical modulator that is integrated with the semiconductor laser and modulates the laser light , a buried layer, and a transparent waveguide The electroabsorption optical modulator includes a first conductive semiconductor layer, an optical waveguide core layer, a second conductive semiconductor layer, and a first conductive semiconductor layer, which are sequentially stacked. A first electrode formed on the second conductive type semiconductor layer immediately above the optical waveguide core layer, and the first electrode and the second electrode. light absorption coefficient of the optical waveguide core layer is changed by a voltage applied between the width of the optical waveguide core layer, gradually decreases toward the light emitting end of the electro-absorption optical modulator, the embedded The layer embeds both sides of the optical waveguide core layer, and the transparent waveguide core A layer is formed around the optical waveguide core layer and is in contact with the optical waveguide core layer, and the second electrode is not formed immediately above the transparent waveguide core layer, or the second conductive semiconductor The refractive index of the transparent waveguide core layer is not in contact with the layer, and is a value between the refractive index of the buried layer and the refractive index of the optical waveguide core layer. The band gap energy is larger than the band gap energy of the optical waveguide core layer .

本発明では、電界吸収型光変調器の光導波路コア層の幅が、電界吸収型光変調器の出射端に向かって漸減する。これにより、電界吸収型光変調器は、光を変調すると同時に、スポットサイズを拡大するスポットサイズ変換器としても動作する。これにより、屈折率の虚部の差異に起因する反射戻り光は生じないため、伝送品質を改善することができる。   In the present invention, the width of the optical waveguide core layer of the electroabsorption optical modulator gradually decreases toward the emission end of the electroabsorption optical modulator. Thus, the electroabsorption optical modulator operates as a spot size converter that modulates light and simultaneously enlarges the spot size. As a result, reflected return light caused by the difference in the imaginary part of the refractive index does not occur, so that transmission quality can be improved.

本発明の実施の形態１に係る半導体装置を示す平面図である。1 is a plan view showing a semiconductor device according to a first embodiment of the present invention. 図１のＩ−ＩＩに沿った断面図である。It is sectional drawing in alignment with I-II of FIG. 図１のＩＩＩ−ＩＶに沿った断面図である。It is sectional drawing along III-IV of FIG. 図１のＶ−ＶＩに沿った断面図である。It is sectional drawing along V-VI of FIG. 図１のＶＩＩ−ＶＩＩＩに沿った断面図である。It is sectional drawing along VII-VIII of FIG. 比較例に係る半導体装置を示す平面図である。It is a top view which shows the semiconductor device which concerns on a comparative example. 図６のＶ−ＶＩに沿った断面図である。It is sectional drawing along V-VI of FIG. 図６のＶＩＩ−ＶＩＩＩに沿った断面図である。It is sectional drawing along VII-VIII of FIG. 本発明の実施の形態２に係る半導体装置を示す平面図である。It is a top view which shows the semiconductor device which concerns on Embodiment 2 of this invention. 図９のＶ−ＶＩに沿った断面図である。It is sectional drawing along V-VI of FIG. 図９のＶＩＩ−ＶＩＩＩに沿った断面図である。FIG. 10 is a sectional view taken along line VII-VIII in FIG. 9. 本発明の実施の形態３に係る半導体装置を示す平面図である。It is a top view which shows the semiconductor device which concerns on Embodiment 3 of this invention. 図１２のＶ−ＶＩに沿った断面図である。It is sectional drawing in alignment with V-VI of FIG. 図１２のＶＩＩ−ＶＩＩＩに沿った断面図である。It is sectional drawing in alignment with VII-VIII of FIG.

本発明の実施の形態に係る光変調器集積半導体レーザについて図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。   An optical modulator integrated semiconductor laser according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置を示す平面図である。半導体レーザ１と電界吸収型光変調器２が集積されている。半導体レーザ１がレーザ光を出射し、そのレーザ光を電界吸収型光変調器２が変調する。Embodiment 1 FIG.
FIG. 1 is a plan view showing a semiconductor device according to Embodiment 1 of the present invention. A semiconductor laser 1 and an electroabsorption optical modulator 2 are integrated. The semiconductor laser 1 emits laser light, and the electroabsorption optical modulator 2 modulates the laser light.

図２は図１のＩ−ＩＩに沿った断面図である。半導体レーザ１において、ｎ−ＩｎＰ基板３上にｎ−ＩｎＰクラッド層４、活性層５、ｐ−ＩｎＰクラッド層６及びｐ−ＩｎＧａＡｓＰコンタクト層７が順に積層されている。活性層５は例えばＩｎＧａＡｓＰ−ＭＱＷ又はＡｌＧａＩｎＡｓ−ＭＱＷであり、回折格子の層も含む。カソード電極８がｎ−ＩｎＰ基板３の下に形成されている。アノード電極９が活性層５の真上においてｐ−ＩｎＧａＡｓＰコンタクト層７上に形成されている。   FIG. 2 is a cross-sectional view taken along the line I-II in FIG. In the semiconductor laser 1, an n-InP cladding layer 4, an active layer 5, a p-InP cladding layer 6, and a p-InGaAsP contact layer 7 are sequentially stacked on an n-InP substrate 3. The active layer 5 is, for example, InGaAsP-MQW or AlGaInAs-MQW and includes a diffraction grating layer. A cathode electrode 8 is formed under the n-InP substrate 3. An anode electrode 9 is formed on the p-InGaAsP contact layer 7 immediately above the active layer 5.

図３は図１のＩＩＩ−ＩＶに沿った断面図である。図４は図１のＶ−ＶＩに沿った断面図である。図５は図１のＶＩＩ−ＶＩＩＩに沿った断面図である。電界吸収型光変調器２において、ｎ−ＩｎＰ基板３上にｎ−ＩｎＰクラッド層４、光導波路コア層１０、ｐ−ＩｎＰクラッド層６及びｐ−ＩｎＧａＡｓＰコンタクト層７が順に積層されている。光導波路コア層１０は例えばＡｌＧａＩｎＡｓ−ＭＱＷ又はＩｎＧａＡｓＰ−ＭＱＷである。   3 is a cross-sectional view taken along line III-IV in FIG. 4 is a cross-sectional view taken along line V-VI in FIG. FIG. 5 is a cross-sectional view taken along the line VII-VIII in FIG. In the electroabsorption optical modulator 2, an n-InP clad layer 4, an optical waveguide core layer 10, a p-InP clad layer 6, and a p-InGaAsP contact layer 7 are sequentially laminated on an n-InP substrate 3. The optical waveguide core layer 10 is, for example, AlGaInAs-MQW or InGaAsP-MQW.

アノード電極１１が光導波路コア層１０の真上においてｐ−ＩｎＧａＡｓＰコンタクト層７の上に形成されている。アノード電極９，１１以外においてｐ−ＩｎＧａＡｓＰコンタクト層７はＳｉＯ２絶縁膜１２で覆われている。半絶縁性ＩｎＰ層１３及びｎ−ＩｎＰ電流ブロック層１４が活性層５及び光導波路コア層１０の両サイドを埋め込んでいる。An anode 11 is formed on the p-InGaAsP contact layer 7 directly above the optical waveguide core layer 10. Except for the anode electrodes 9 and 11, the p-InGaAsP contact layer 7 is covered with a SiO 2 insulating film 12. A semi-insulating InP layer 13 and an n-InP current blocking layer 14 embed both sides of the active layer 5 and the optical waveguide core layer 10.

カソード電極８とアノード電極１１との間に印加する電圧によって光導波路コア層１０の光吸収係数が変化する。電界吸収型光変調器２は、光導波路コア層１０の幅が一定の部分と、光導波路コア層１０の幅が電界吸収型光変調器２の光出射端に向かって漸減する部分とを有する。幅が漸減する部分の直上にもアノード電極１１が形成されている。幅が一定の部分と漸減する部分の両方に同じ変調信号を共通のアノード電極１１を介して印加し、光変調器として動作させる。光導波路コア層１０の幅がレーザ光の伝搬方向に沿って徐々に狭くなる部分は、光変調器としてだけでなく、スポットサイズ変換器部としても動作する。   The light absorption coefficient of the optical waveguide core layer 10 changes depending on the voltage applied between the cathode electrode 8 and the anode electrode 11. The electroabsorption optical modulator 2 has a portion where the width of the optical waveguide core layer 10 is constant, and a portion where the width of the optical waveguide core layer 10 gradually decreases toward the light emitting end of the electroabsorption optical modulator 2. . The anode electrode 11 is also formed immediately above the portion where the width gradually decreases. The same modulation signal is applied to both the constant width portion and the gradually decreasing portion via the common anode electrode 11 to operate as an optical modulator. The portion where the width of the optical waveguide core layer 10 gradually decreases along the propagation direction of the laser light operates not only as an optical modulator but also as a spot size converter portion.

続いて、本実施の形態の効果を比較例と比較して説明する。図６は、比較例に係る半導体装置を示す平面図である。図７は図６のＶ−ＶＩに沿った断面図である。図８は図６のＶＩＩ−ＶＩＩＩに沿った断面図である。図６のＩ−ＩＩに沿った断面図は図２と同じであり、図６のＩＩＩ−ＩＶに沿った断面図は図３と同じである。   Subsequently, the effect of the present embodiment will be described in comparison with a comparative example. FIG. 6 is a plan view showing a semiconductor device according to a comparative example. FIG. 7 is a cross-sectional view taken along the line V-VI in FIG. FIG. 8 is a sectional view taken along the line VII-VIII in FIG. 6 is the same as FIG. 2, and the cross-sectional view along III-IV in FIG. 6 is the same as FIG.

比較例では、電界吸収型光変調器２の光導波路コア層１０の幅が一定であり、その出射端に、スポットサイズ変換機能を有するスポットサイズ変換器１５の透明導波路コア層１６がバットジョイントにより接続されている。消光比をＥｘｔ、電界吸収型光変調器２の吸収係数をα、変調器長をＬ、光波長をλ、光導波路コア層１０の屈折率の虚部をｋ、屈折率の実部をｎ、反射率をＲとすると以下の関係式が成り立つ。
Ｅｘｔ＝ｅｘｐ（−αＬ）
ｋ＝αλ／４π
Ｒ＝（ｋ／ｓｑｒｔ（ｎ２＋ｋ２）＋ｎ）２ In the comparative example, the width of the optical waveguide core layer 10 of the electroabsorption optical modulator 2 is constant, and the transparent waveguide core layer 16 of the spot size converter 15 having a spot size conversion function is formed at the emission end thereof. Connected by. The extinction ratio is Ext, the absorption coefficient of the electroabsorption optical modulator 2 is α, the modulator length is L, the optical wavelength is λ, the imaginary part of the refractive index of the optical waveguide core layer 10 is k, and the real part of the refractive index is n. When the reflectance is R, the following relational expression is established.
Ext = exp (−αL)
k = αλ / 4π
R = (k / sqrt (n 2 + k 2 ) + n) 2

一例として、消光比Ｅｘｔが１１ｄＢ、変調器長Ｌが１８０μｍ、半導体レーザ１の発振波長λが１．５５μｍの場合、屈折率の虚部ｋの変動は７．５Ｅ−４となる。光導波路コア層１０と透明導波路コア層１６の実部の実効屈折率ｎがともに３．２であった場合、屈折率の虚部の変動による反射率の変動Ｒは１．９Ｅ−１６％となる。このように電界吸収型光変調器２とスポットサイズ変換器１５の接続部において実効屈折率の虚部の値が合致しない。このため、半導体レーザ１に変調され強度が変化する光が戻り、活性層５内部の光強度を擾乱し、伝送特性の劣化が生じる。   As an example, when the extinction ratio Ext is 11 dB, the modulator length L is 180 μm, and the oscillation wavelength λ of the semiconductor laser 1 is 1.55 μm, the fluctuation of the imaginary part k of the refractive index is 7.5E-4. When the effective refractive index n of the real part of both the optical waveguide core layer 10 and the transparent waveguide core layer 16 is 3.2, the fluctuation R of the reflectance due to the fluctuation of the imaginary part of the refractive index is 1.9E-16%. It becomes. In this way, the value of the imaginary part of the effective refractive index does not match at the connection part between the electroabsorption optical modulator 2 and the spot size converter 15. For this reason, the light whose intensity is changed by the semiconductor laser 1 returns, disturbs the light intensity inside the active layer 5, and deteriorates the transmission characteristics.

これに対して、本実施の形態では、電界吸収型光変調器２の光導波路コア層１０の幅が、電界吸収型光変調器２の出射端に向かって漸減する。これにより、電界吸収型光変調器２は、光を変調すると同時に、スポットサイズを拡大するスポットサイズ変換器としても動作する。これにより、比較例のような屈折率の虚部の差異に起因する反射戻り光は生じないため、伝送品質を改善することができる。   On the other hand, in the present embodiment, the width of the optical waveguide core layer 10 of the electroabsorption optical modulator 2 gradually decreases toward the emission end of the electroabsorption optical modulator 2. Thereby, the electroabsorption optical modulator 2 operates as a spot size converter that modulates light and simultaneously enlarges the spot size. Thereby, the reflected return light caused by the difference in the imaginary part of the refractive index as in the comparative example does not occur, so that the transmission quality can be improved.

また、窓構造を設けると、電界吸収型光変調器２の光導波路コア層１０と窓構造の埋込層との間の屈折率差が極めて大きなことに起因して戻り光が大きくなり、上記の効果が得られなくなる。そこで、光出射端での光反射を低減するため、光導波路コア層１０は光出射端まで延在していることが好ましい。   Further, when the window structure is provided, the return light becomes large due to the extremely large difference in refractive index between the optical waveguide core layer 10 of the electroabsorption optical modulator 2 and the buried layer of the window structure. The effect of cannot be obtained. Therefore, in order to reduce light reflection at the light emitting end, it is preferable that the optical waveguide core layer 10 extends to the light emitting end.

実施の形態２．
図９は、本発明の実施の形態２に係る半導体装置を示す平面図である。図１０は図９のＶ−ＶＩに沿った断面図である。図１１は図９のＶＩＩ−ＶＩＩＩに沿った断面図である。図９のＩ−ＩＩに沿った断面図は図２と同じであり、図９のＩＩＩ−ＩＶに沿った断面図は図３と同じである。Embodiment 2. FIG.
FIG. 9 is a plan view showing a semiconductor device according to the second embodiment of the present invention. 10 is a cross-sectional view taken along line V-VI in FIG. 11 is a cross-sectional view taken along the line VII-VIII in FIG. 9 is the same as FIG. 2, and the cross-sectional view along III-IV in FIG. 9 is the same as FIG.

透明導波路コア層１６が光導波路コア層１０の周囲に形成され光導波路コア層１０に接触する。透明導波路コア層１６は例えばＩｎＧａＡｓＰ又はＡｌＧａＩｎＡｓである。透明導波路コア層１６の真上においてアノード電極１１は形成されていないか、又はＳｉＯ２絶縁膜１２の上に形成されるなどしてｐ−ＩｎＧａＡｓＰコンタクト層７に接触していない。透明導波路コア層１６の屈折率は、半絶縁性ＩｎＰ層１３及びｎ−ＩｎＰ電流ブロック層１４の屈折率と光導波路コア層１０の屈折率との間の値である。透明導波路コア層１６のバンドギャップエネルギーは、光導波路コア層１０のバンドギャップエネルギーよりも大きい。A transparent waveguide core layer 16 is formed around the optical waveguide core layer 10 and is in contact with the optical waveguide core layer 10. The transparent waveguide core layer 16 is, for example, InGaAsP or AlGaInAs. The anode electrode 11 is not formed immediately above the transparent waveguide core layer 16 or is not in contact with the p-InGaAsP contact layer 7 by being formed on the SiO 2 insulating film 12. The refractive index of the transparent waveguide core layer 16 is a value between the refractive index of the semi-insulating InP layer 13 and the n-InP current blocking layer 14 and the refractive index of the optical waveguide core layer 10. The band gap energy of the transparent waveguide core layer 16 is larger than the band gap energy of the optical waveguide core layer 10.

このように透明導波路コア層１６を設けることで電界吸収型光変調器２の消光特性とスポットサイズとを独立に設計することができる。その他の構成及び効果は実施の形態１と同様である。   By providing the transparent waveguide core layer 16 in this manner, the extinction characteristic and the spot size of the electroabsorption optical modulator 2 can be designed independently. Other configurations and effects are the same as those of the first embodiment.

実施の形態３．
図１２は、本発明の実施の形態３に係る半導体装置を示す平面図である。図１３は図１２のＶ−ＶＩに沿った断面図である。図１４は図１２のＶＩＩ−ＶＩＩＩに沿った断面図である。図１２のＩ−ＩＩに沿った断面図は図２と同じであり、図１２のＩＩＩ−ＩＶに沿った断面図は図３と同じである。Embodiment 3 FIG.
FIG. 12 is a plan view showing a semiconductor device according to the third embodiment of the present invention. 13 is a cross-sectional view taken along line V-VI in FIG. 14 is a cross-sectional view taken along the line VII-VIII in FIG. 12 is the same as FIG. 2, and the cross-sectional view along III-IV in FIG. 12 is the same as FIG.

光導波路コア層１０と透明導波路コア層１６の合計幅は、電界吸収型光変調器２の出射端に向かって漸減する。これにより、実施の形態２よりもスポットサイズを拡大することができる。その他の構成及び効果は実施の形態１，２と同様である。   The total width of the optical waveguide core layer 10 and the transparent waveguide core layer 16 gradually decreases toward the emission end of the electroabsorption optical modulator 2. Thereby, the spot size can be enlarged as compared with the second embodiment. Other configurations and effects are the same as those of the first and second embodiments.

１ 半導体レーザ、２ 電界吸収型光変調器、４ ｎ−ＩｎＰクラッド層（第１導電型半導体層）、６ ｐ−ＩｎＰクラッド層（第２導電型半導体層）、８ カソード電極（第１の電極）、１１ アノード電極（第２の電極）、１０ 光導波路コア層、１３ 半絶縁性ＩｎＰ層（埋込層）、１４ ｎ−ＩｎＰ電流ブロック層（埋込層）、１６ 透明導波路コア層 DESCRIPTION OF SYMBOLS 1 Semiconductor laser, 2 Electroabsorption type optical modulator, 4 n-InP clad layer (1st conductivity type semiconductor layer), 6 p-InP clad layer (2nd conductivity type semiconductor layer), 8 Cathode electrode (1st electrode) ), 11 Anode electrode (second electrode), 10 Optical waveguide core layer, 13 Semi-insulating InP layer (embedded layer), 14 n-InP current blocking layer (embedded layer), 16 Transparent waveguide core layer

Claims (3)

レーザ光を出射する半導体レーザと、
前記半導体レーザと集積され、前記レーザ光を変調する電界吸収型光変調器と、
埋込層と、
透明導波路コア層とを備え、
前記電界吸収型光変調器は、順に積層された第１導電型半導体層、光導波路コア層及び第２導電型半導体層と、前記第１導電型半導体層の下に形成された第１の電極と、前記光導波路コア層の真上において前記第２導電型半導体層の上に形成された第２の電極とを有し、
前記第１の電極と前記第２の電極との間に印加する電圧によって前記光導波路コア層の光吸収係数が変化し、
前記光導波路コア層の幅は、前記電界吸収型光変調器の光出射端に向かって漸減し、
前記埋込層は前記光導波路コア層の両サイドを埋め込み、
前記透明導波路コア層は前記光導波路コア層の周囲に形成され前記光導波路コア層に接触し、
前記透明導波路コア層の真上において前記第２の電極は形成されていないか、又は前記第２導電型半導体層に接触しておらず、
前記透明導波路コア層の屈折率は、前記埋込層の屈折率と前記光導波路コア層の屈折率との間の値であり、
前記透明導波路コア層のバンドギャップエネルギーは、前記光導波路コア層のバンドギャップエネルギーよりも大きいことを特徴とする光変調器集積半導体レーザ。 A semiconductor laser that emits laser light;
An electroabsorption optical modulator integrated with the semiconductor laser and modulating the laser light ;
An embedded layer;
A transparent waveguide core layer ,
The electroabsorption optical modulator includes a first conductive semiconductor layer, an optical waveguide core layer, a second conductive semiconductor layer, and a first electrode formed under the first conductive semiconductor layer, which are sequentially stacked. And a second electrode formed on the second conductivity type semiconductor layer directly above the optical waveguide core layer,
The light absorption coefficient of the optical waveguide core layer is changed by a voltage applied between the first electrode and the second electrode,
The width of the optical waveguide core layer gradually decreases toward the light exit end of the electroabsorption optical modulator ,
The embedded layer embeds both sides of the optical waveguide core layer,
The transparent waveguide core layer is formed around the optical waveguide core layer and is in contact with the optical waveguide core layer,
The second electrode is not formed directly above the transparent waveguide core layer, or is not in contact with the second conductivity type semiconductor layer,
The refractive index of the transparent waveguide core layer is a value between the refractive index of the buried layer and the refractive index of the optical waveguide core layer,
The optical modulator integrated semiconductor laser , wherein the band gap energy of the transparent waveguide core layer is larger than the band gap energy of the optical waveguide core layer . 前記光導波路コア層と前記透明導波路コア層の合計幅は、前記電界吸収型光変調器の出射端に向かって漸減することを特徴とする請求項１に記載の光変調器集積半導体レーザ。 The total width of the said optical waveguide core layer transparent waveguide core layer, the optical modulator integrated semiconductor laser according to claim 1, characterized in that gradually decreases toward the exit end of the electro-absorption optical modulator. 前記光導波路コア層は光出射端まで延在していることを特徴とする請求項１又は２に記載の光変調器集積半導体レーザ。 An optical modulator integrated semiconductor laser according to claim 1 or 2, wherein the optical waveguide core layer is characterized in that it extends to the light emitting end.
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