CN110233421A - A kind of tapered semiconductor laser based on annular outer-cavity - Google Patents
A kind of tapered semiconductor laser based on annular outer-cavity Download PDFInfo
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- CN110233421A CN110233421A CN201910620096.4A CN201910620096A CN110233421A CN 110233421 A CN110233421 A CN 110233421A CN 201910620096 A CN201910620096 A CN 201910620096A CN 110233421 A CN110233421 A CN 110233421A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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Abstract
The invention discloses a kind of tapered semiconductor lasers based on annular outer-cavity, including conical laser, diffraction grating, beam splitter and the microscope group that is all-trans；The conical laser includes front cavity surface, rear facet, ridge waveguide area and tapered gain amplification region；Diffraction grating is located at the light direction of conical laser；Beam splitter is located at the diffraction light direction of diffraction grating；The light redirection that beam splitter reflects is transferred to the rear facet of conical laser by the microscope group that is all-trans, the conical laser issues laser light incident to diffraction grating from front cavity surface, beam splitter light splitting is transmitted to through diffraction grating diffraction, most of light directly exports, the rear facet of conical laser is transferred to after the reflection of fraction light by microscope group deflecting of being all-trans, it selects fundamental transverse mode and the power amplification of tapered gain amplification region to be emitted again by the ridge waveguide area inside conical laser, forms circulation.Using a kind of tapered semiconductor laser based on annular outer-cavity of the invention, narrow spectrum width, tunable high brightness laser can be generated while keeping the tapered semiconductor laser high light beam quality based on annular outer-cavity.
Description
Technical field
The present invention relates to a kind of tapered semiconductor lasers based on annular outer-cavity, belong to semiconductor laser technology neck
Domain.
Background technique
High-brightness semiconductor laser is the research hotspot in Solid State Laser field, the high, good beam quality with laser power
The characteristics of.The high brightness of broad sense includes high spatial brightness and EO-1 hyperion brightness.High spatial brightness semiconductor laser has a variety of
Structure type, wherein most potential tapered semiconductor laser (the abbreviation taper laser for being namely based on annular outer-cavity
Device), it is integrated in the main Congestion Area of ridged of single mode high light beam quality and tapered gain amplification region in same device, therefore is mentioning
It is still able to maintain good beam quality simultaneously for higher output power.The highest monolithic semiconductor of existing report luminance index swashs
Light device is exactly the conical laser of German Ferdinand-Braun Research Institute, output power 11W, M2 on wavelength 979nm
< 1.1, brightness reaches 1000MW/cm2sr.The good beam quality of conical laser can reduce the complicated journey of beam shaping system
Degree improves optical coupling efficiency, thus it has extensively in fields such as pumping high-brightness fiber-optic laser, industrial processes, optical detections
Wealthy application prospect.With the appearance of the new opplications scene such as Spectral beam combining, coherent light communication, for (narrow with EO-1 hyperion brightness
Spectral width), tunable novel high brightness laser light source, more stringent requirements are proposed.Therefore research have narrow spectral width,
The novel tapered laser (1) of tunable wave length characteristic has important scientific meaning and practical value.
Control conical laser spectral luminance factor and the difficult point of tuning are: since the lateral mould field of conical laser is larger, being
The device architecture that control spectrum introduces often result in the influence of the deterioration beam quality such as High-order lateral mode, Filamentous luminous nonlinear effect because
Element, therefore realize that control spectrum is the difficult point and heat of high-brightness semiconductor laser research field under the premise of keeping high spatial brightness
Point.Common conical laser spectrum control technology includes following two categories:
1, on piece optical grating construction.Ridge waveguide area end face i.e. inside taper laser chip, using distributed Blatt reflective
(DBR) it is used as reflector, spectrum locking may be implemented.German Ferdinand-Braun research institute just uses intracavitary dbr structure
Spectrum width is controlled, although the taper DL of the structure can narrow spectrum width to 13pm, realizes EO-1 hyperion brightness, this method is also solid
Having determined optical maser wavelength can not tune, while intracavitary preparing grating needs to use electronic beam litho machine or step photo-etching machine, work
Skill is complicated, with high costs.
2, external cavity grating feedback structure.To solve the problems, such as wavelength tuning, foreign study personnel introduce outside DL and glare
Grid constitute external cavity semiconductor laser, carry out longitudinal mode selection by external cavity grating feedback, thus real while obtaining narrow spectrum
The tuning of existing excitation wavelength.Generally use two kinds of grating external-cavity structures of Littrow or Littman-Metcalf type.But it is answered
There are problems that two: first when used in conical laser, since taper DL structure is special, ridge waveguide length and width generally only have 1 μ m
(3~5) μm, reflected light enter front cavity surface from exocoel grating re-injection, and backpropagation power density is excessive, may cause tapered zone-ridge
Waveguide junction or rear facet are burnt.Second, reflected light is other than being coupled back into ridge waveguide section, and there are also parts in front and back Cavity surface
Between form multimode oscillation, this part multimode light may destroy the beam quality of conical laser.Therefore, external cavity grating feedback
Structure is unable to satisfy space and closes the application such as beam for the needs of high power, high light beam quality single tube taper DL.
In addition to above-mentioned technology, there are also some other control conical laser spectral widths or the methods of tuning, including base
In the separation MOPA conical laser of narrow spectrum seed source, in conjunction with spectrum control technology of nonlinear crystal etc..Although the above method
Spectrum width can be narrowed to a certain extent or realizes spectral tuning, but spatial brightness is low, spectrum for all different degrees of the having of these methods
The defect that tuning range is narrow, rear end coupling efficiency is low.
Summary of the invention
Goal of the invention of the invention is: in view of the above problems, providing a kind of taper based on annular outer-cavity half
Conductor laser, the present invention can produce while keeping the tapered semiconductor laser high light beam quality based on annular outer-cavity
Raw narrow spectrum width, tunable high brightness laser.
The technical solution adopted by the invention is as follows:
A kind of tapered semiconductor laser based on annular outer-cavity, including conical laser, diffraction grating, beam splitter and complete
Anti- microscope group；
The conical laser includes front cavity surface, rear facet, ridge waveguide area and tapered gain amplification region；
The diffraction grating is located at the light direction of conical laser；The beam splitter is located at the diffraction light side of diffraction grating
To；The light redirection that beam splitter reflects is transferred to the rear facet of conical laser by the microscope group that is all-trans；
The conical laser is from front cavity surface sending laser light incident to diffraction grating, after diffraction grating diffraction selects wavelength,
It is transmitted to beam splitter light splitting, most of light directly exports, and is transferred to taper by microscope group deflecting of being all-trans after the reflection of fraction light and swashs
The rear facet of light device selects fundamental transverse mode and the power amplification of tapered gain amplification region again by the ridge waveguide area inside conical laser
Outgoing forms circulation.
Preferably, the epitaxial layer is located at the top of substrate, it from top to bottom include lower limit layer, lower waveguide layer, quantum
Well layer, upper ducting layer, upper limiting layer, upper contact layer；P side electrode is arranged in the upper contact layer top, and the face N electricity is arranged in base lower portion
Pole.
Preferably, the diffraction grating is plane diffraction grating or volume Bragg grating.
Preferably, the diffraction grating can be rotated, diffraction grating angle is adjusted by rotation；Diffraction grating is rotated to change
Incident angle plays the role of selecting spectral frequency (single longitudinal mode) and tuning wavelength.
Preferably, the beam splitting specular reflectivity is 1%~10%；Most of light can be exported directly, and fraction light is anti-
Conical laser rear facet is transferred to by the microscope group that is all-trans after penetrating.
Preferably, described the last one total reflective mirror in microscope group that is all-trans is located at the reverse extending that conical laser issues laser
On line, the laser coaxial that the light and conical laser for reflecting it issue makes the light of reflection enter conical laser in parallel.
Preferably, the microscope group that is all-trans includes two total reflective mirrors, diffraction grating, beam splitter and two total reflective mirrors are in square
The quadrangle of shape, for conical laser between diffraction grating and the last one total reflective mirror, the microscope group that is all-trans includes that two total reflective mirrors are
Simplest structure, the quantity of total reflective mirror can be two or more in practical application；
Preferably, the specular reflectivity that is all-trans being all-trans in microscope group is greater than 99%.
Preferably, the width in the ridge waveguide area is 2 μm -7 μm, length 0.2mm-1mm.
Preferably, the cone angle degree of the tapered gain amplification region is 4 ° -7 °, length 1mm-5mm.
Preferably, the front cavity surface is coated with anti-reflection film, the anti-reflection film is 0.01%- to optical maser wavelength reflectance value
1%.
Preferably, the rear facet is coated with anti-reflection film, the anti-reflection film is 0.01%- to optical maser wavelength reflectance value
0.2%.
Preferably, further including fast axis collimation mirror and slow axis collimating mirror, between front cavity surface and diffraction grating；It is described fast
Axis collimating mirror is between front cavity surface and slow axis collimating mirror.
Preferably, further including isolator, for the isolator between diffraction grating and beam splitter, effect is to prevent
Light echo interference.
Preferably, further including aspherical microscope group, the aspherical microscope group is located at rear facet and last in microscope group that be all-trans
Between a total reflective mirror, keep light extremely consistent with the ridge waveguide size of conical laser rear facet by aspherical microscope group shrink beam.
A kind of tapered semiconductor laser based on annular outer-cavity of the invention, the front cavity surface of conical laser, which issues, to swash
Light is incident on diffractive grating surface by the collimation of fast axis collimation mirror and slow axis collimating mirror, and rotation diffraction grating changes incidence angle
Degree, plays the role of selecting spectral frequency (single longitudinal mode), and rotatable diffraction gratings angle plays tuning wavelength, and diffraction light passes through unidirectional
Device is transmitted to beam splitter and is divided, and most of transmitted light directly exports, through passing through microscope group transmission of being all-trans after the reflection of fraction light
Deflecting, after by aspherical microscope group shrink beam to consistent with the ridge waveguide size of conical laser rear facet, in conical laser
Inside, space basic mode obtain advantage since the modeling in ridge waveguide area acts on, obtain the base of high light beam quality in mode competition
Mould (single transverse mode) laser, and power amplification is obtained in tapered gain amplification region, high brightness laser is exported from front cavity surface, and composition is followed
Ring.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are: conical laser output swashs
Light after beam splitting, only fraction through be all-trans microscope group return conical laser back cavity rib region, be not present ante-chamber grating feedback,
Avoid the problem of multimode oscillation between the Cavity surface of front and back is burnt in general reflective outside cavity gas laser rib region；The locking of wavelength and
Tuning is realized by changing the angle of diffraction grating, can be to sharp since diffraction efficiency of grating is high, angle change is big
Optical wavelength realizes wide scope, high efficiency tuning.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is a kind of structural schematic diagram of the tapered semiconductor laser the present invention is based on annular outer-cavity；
Fig. 2 is another structural schematic diagram of the tapered semiconductor laser the present invention is based on annular outer-cavity；
Fig. 3 is the structural schematic diagram of conical laser.
Marked in the figure: 1- conical laser, 2- diffraction grating, 3- beam splitter, 4- are all-trans microscope group, the face 5-P electrode, connect on 6-
Contact layer, 7- upper limiting layer, the upper ducting layer of 8-, 9- quantum well layer, 10- lower waveguide layer, 11- lower limit layer, 12- substrate, the face 13-N
Electrode, 14- rear facet, 15- front cavity surface, 16- ridge waveguide area, 17- tapered gain amplification region, 18- fast axis collimation mirror, 19- are slow
Axis collimating mirror, 20- isolator, the aspherical microscope group of 21-.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification unless specifically stated can be equivalent or with similar purpose by other
Alternative features are replaced.That is, unless specifically stated, each feature is an example in a series of equivalent or similar characteristics
?.
As shown in Figure 1-3, a kind of tapered semiconductor laser based on annular outer-cavity of the present embodiment, including taper laser
Device 1, diffraction grating 2, beam splitter 3 and the microscope group 4 that is all-trans；The microscope group that is all-trans 4 includes two total reflective mirrors；
The conical laser 1 includes front cavity surface 15, rear facet 14, ridge waveguide area 16 and tapered gain amplification region 17；
The diffraction grating 2, beam splitter 3 and two total reflective mirrors are in the quadrangle of rectangle, and conical laser 1 is located at diffraction light
Between grid 2 and the last one total reflective mirror；
The diffraction grating 2 is located at the light direction of conical laser 1；The beam splitter 3 is located at the diffraction of diffraction grating 2
Light direction；The light redirection that beam splitter 3 reflects is transferred to the rear facet 14 of conical laser 1 by the microscope group 4 that is all-trans；
The conical laser 1 issues laser light incident to diffraction grating 2 from front cavity surface 15, selects wave through 2 diffraction of diffraction grating
After length, it is transmitted to the light splitting of beam splitter 3, most of light directly exports, and is transferred to after the reflection of fraction light by 4 deflecting of microscope group of being all-trans
The rear facet 14 of conical laser 1 selects fundamental transverse mode and tapered gain to amplify by the ridge waveguide area 16 inside conical laser 1
17 power amplification of area is emitted again, forms circulation.
Preferably, the conical laser 1 further includes substrate 12, epitaxial layer, electrode；The front cavity surface 15 is arranged in base
The one side at bottom 12；Substrate 12 another side opposite with front cavity surface 15 is arranged in rear facet 14；The setting of ridge waveguide area 16 exists
In the substrate 12 of rear facet 14；Tapered gain amplification region 17 is positioned close in the substrate 12 of front cavity surface 15；Tapered gain
Amplification region 17 is connected with ridge waveguide area 16.
Preferably, the epitaxial layer is located at the top of substrate 12, it from top to bottom include lower limit layer 11, lower waveguide layer
10, quantum well layer 9, upper ducting layer 8, upper limiting layer 7, upper contact layer 6；P side electrode 5, substrate is arranged in 6 top of upper contact layer
The face N electrode 13 is arranged in 12 lower parts.
Preferably, the diffraction grating 2 is plane diffraction grating.
Preferably, the diffraction grating 2 can rotate, 2 angle of diffraction grating is adjusted by rotation.
Preferably, 3 reflectivity of beam splitter is 10%.
Preferably, the specular reflectivity that is all-trans being all-trans in microscope group 4 is greater than 99%.
Preferably, the width in the ridge waveguide area 16 is 5 μm, length 0.6mm.
Preferably, the cone angle degree of the tapered gain amplification region 17 is 4 °, length 3mm.
Preferably, the front cavity surface 15 is coated with anti-reflection film, the anti-reflection film is 0.01% to optical maser wavelength reflectance value.
Preferably, the rear facet 14 is coated with anti-reflection film, the anti-reflection film is 0.01% to optical maser wavelength reflectance value.
In another embodiment, the diffraction grating is volume Bragg grating；It further include aspherical microscope group, it is described aspherical
Microscope group is located at rear facet and is all-trans in microscope group between the last one total reflective mirror, swashs light to taper by aspherical microscope group shrink beam
The ridge waveguide size of light device rear facet is consistent；Further include fast axis collimation mirror and slow axis collimating mirror, is located at front cavity surface and diffraction light
Between grid；The fast axis collimation mirror is between front cavity surface and slow axis collimating mirror；It further include isolator, the isolator, which is located at, to spread out
It penetrates between grating and beam splitter.
In conclusion using a kind of tapered semiconductor laser based on annular outer-cavity of the invention, conical laser is defeated
Laser out after beam splitting, only fraction through be all-trans microscope group return conical laser back cavity rib region, be not present ante-chamber light
Grid feedback avoids the problem of multimode oscillation between the Cavity surface of front and back is burnt in general reflective outside cavity gas laser rib region；Wavelength
Locking and tuning be by change diffraction grating angle realizes, due to diffraction efficiency of grating height, angle change it is big,
It can realize that wide scope, high efficiency are tuned to optical maser wavelength.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (10)
1. a kind of tapered semiconductor laser based on annular outer-cavity, it is characterised in that: including conical laser (1), diffraction light
Grid (2), beam splitter (3) and the microscope group that is all-trans (4)；
The conical laser (1) includes front cavity surface (15), rear facet (14), ridge waveguide area (16) and tapered gain amplification region
(17)；
The diffraction grating (2) is located at the light direction of conical laser (1)；The beam splitter (3) is located at diffraction grating (2)
Diffraction light direction；The light redirection that beam splitter (3) reflects is transferred to the rear facet of conical laser (1) by the microscope group that is all-trans (4)
(14)；
The conical laser (1) issues laser light incident to diffraction grating (2), through diffraction grating (2) diffraction from front cavity surface (15)
It is transmitted to beam splitter (3) light splitting, most of light directly exports, and is transferred to after the reflection of fraction light by the microscope group that is all-trans (4) deflecting
The rear facet (14) of conical laser (1) selects fundamental transverse mode and taper by the internal ridge waveguide area (16) of conical laser (1)
Gain amplification region (17) power amplification is emitted again, forms circulation.
2. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: the taper laser
Device (1) further includes substrate (12), epitaxial layer and electrode；One side of front cavity surface (15) setting in substrate (12)；Rear facet
(14) it is arranged in substrate (12) another side opposite with front cavity surface (15)；Ridge waveguide area (16) is positioned close to rear facet
(14) in substrate (12)；Tapered gain amplification region (17) is positioned close in the substrate (12) of front cavity surface (15)；Tapered gain
Amplification region (17) is connected with ridge waveguide area (16).
3. as claimed in claim 2 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: the epitaxial layer position
It from top to bottom include lower limit layer (11), lower waveguide layer (10), quantum well layer (9), upper ducting layer in the top of substrate (12)
(8), upper limiting layer (7), upper contact layer (6)；P side electrode (5) are arranged in upper contact layer (6) top, and substrate (12) lower part is set
Set the face N electrode (13).
4. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: the diffraction grating
It (2) is plane diffraction grating or volume Bragg grating.
5. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: the diffraction grating
(2) it can be rotated, diffraction grating (2) angle adjusted by rotation.
6. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: the beam splitter
(3) reflectivity is 1%~10%.
7. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: the microscope group that is all-trans
(4) the last one total reflective mirror is located at conical laser (1) and issues on the reverse extending line of laser in, the light and taper for reflecting it
The laser coaxial that laser (1) issues.
8. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: further include fast axle standard
Straight mirror (18) and slow axis collimating mirror (19), between front cavity surface (15) and diffraction grating (2)；Fast axis collimation mirror (18) position
Between front cavity surface (15) and slow axis collimating mirror (19).
9. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: further include isolator
(20), the isolator (20) is located between diffraction grating (2) and beam splitter (3).
10. as described in claim 1 based on the tapered semiconductor laser of annular outer-cavity, it is characterised in that: further include aspheric
Face microscope group (21), the aspherical microscope group (21) are located in rear facet (14) and the microscope group that is all-trans (4) between the last one total reflective mirror.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113794103A (en) * | 2021-09-01 | 2021-12-14 | 长春理工大学 | Unstable cavity semiconductor laser and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113794103B (en) * | 2021-09-01 | 2022-07-22 | 长春理工大学 | Unstable cavity semiconductor laser and preparation method thereof |
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