EP0863568A2 - Ligne de transmission haute fréquence capable d'améliorer la caractéristique de la distorsion d'intermodulation d'un dispositif haute fréquence - Google Patents

Ligne de transmission haute fréquence capable d'améliorer la caractéristique de la distorsion d'intermodulation d'un dispositif haute fréquence Download PDF

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Publication number
EP0863568A2
EP0863568A2 EP98104060A EP98104060A EP0863568A2 EP 0863568 A2 EP0863568 A2 EP 0863568A2 EP 98104060 A EP98104060 A EP 98104060A EP 98104060 A EP98104060 A EP 98104060A EP 0863568 A2 EP0863568 A2 EP 0863568A2
Authority
EP
European Patent Office
Prior art keywords
high frequency
grain
oxide superconductor
transmission line
superconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98104060A
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German (de)
English (en)
Other versions
EP0863568A3 (fr
Inventor
Katsumi Suzuki
Sadahiko Miura
Takayuki Inoue
Koji Muranaka
Hideaki Zama
Youichi Enomoto
Tadataka Morishita
Shoji Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Center
NEC Corp
Original Assignee
International Superconductivity Technology Center
NEC Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Superconductivity Technology Center, NEC Corp, Sumitomo Electric Industries Ltd filed Critical International Superconductivity Technology Center
Publication of EP0863568A2 publication Critical patent/EP0863568A2/fr
Publication of EP0863568A3 publication Critical patent/EP0863568A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/081—Microstriplines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/08—Strip line resonators
    • H01P7/082—Microstripline resonators

Definitions

  • the present invention relates to a high frequency transmission line for transmitting a high frequency signal, a resonator having the high frequency transmission line, and a high frequency device having the resonator.
  • the mobile communication field is one of the fast-growing industrial fields where users have been doubled year by year. Following this, there have been raised such demands in the mobile communication field that as many users as possible can receive services under the excellent communication conditions without interference in the limited range of frequency allocation.
  • the mobile communication system using microwaves of, for example, about 0.8GHz to 3GHz it is required that characteristics of resonators and filters used in base stations of the system be excellent.
  • Y-123 type crystal oxide having a 123 type crystal structure as being an oxide superconductor, to a conductor line in a high frequency transmission line in the form of a plane circuit having a microstrip structure, a coplanar structure, a stripline structure or the like.
  • the characteristic of the foregoing resonator or filter can be improved as compared with using gold or copper. This is because the oxide superconductor is small in high frequency resistance.
  • a thin film made of Y-123 type crystal oxide and applied to a conductor line is formed to be about 0.5 ⁇ m thick by a method of laser ablation or sputtering.
  • a thick film made of Y-123 type crystal oxide is formed by a method in which a material dissolved in an organic solvent is hardened on a substrate. According to this method, a thick film not less than about 10 ⁇ m in thickness can be easily formed.
  • the high frequency transmission line formed according to the prior art 2 has the following problem upon being applied to the resonator or the filter as the high frequency device:
  • the thin or thick film of Y-123 type crystal oxide formed according to the prior art 2 As a result, the surface of the thin or thick film is degraded in flatness to have irregularities thereon. This means that a corresponding transmission line is prolonged. Thus, the resistance is increased to enlarge a transmission loss particularly when the large power is inputted.
  • the present inventors Upon solving the foregoing problems, the present inventors have concluded that the intermodulation distortion is increased due to a material characteristic of the oxide superconductor. Specifically, they have concluded that the existence itself of a very large number of the grain boundaries included in the oxide superconductor formed by the prior art enlarges the intermodulation distortion. Therefore, the present invention aims not to control the size of the grain boundaries but to eliminate the grain boundaries for improving the intermodulation distortion characteristic. If the grain boundaries are eliminated, the irregularities on the surface, which have been the problem in the prior art 2, can be suppressed and further the intermodulation distortion characteristic can be improved. For obtaining an oxide superconductor with no grain boundaries included, the present invention utilizes a crystal film producing method disclosed in JP-A-7-33590.
  • Fig. 1 is a sectional view showing a structure of a high frequency transmission line according to the preferred embodiment. The sectional view is used for best explaining the microstrip structure.
  • the high frequency transmission line comprises a magnesia single crystal substrate 101 as a dielectric substrate, an oriented Y-123 crystal film 102 and a non-grain-boundary Y-123 crystal film 103 which cooperatively form a conductor line, and an oriented Y-123 crystal film 104 as a ground conductor plate.
  • the Y-123 crystal film represents a crystal film made of an oxide superconductor (hereinafter referred to as "Y-123”) of YBa2Cu3Ox having a 123 type crystal structure, where x represents an amount of oxygen.
  • the high frequency transmission line in this embodiment comprises the dielectric substrate, the conductor line formed on the dielectric substrate, and the ground conductor plate formed on the surface of the dielectric substrate remote from the surface thereof provided with the conductor line and, as appreciated from Fig. 1, it has the microstrip structure.
  • an yttria crucible made of yttria is provided, then Y2BaCuO5 (solid phase precipitate) is put into the yttria crucible at a lower part thereof as a solute feed substance, and further, a mixed solution of BaO and CuO is put into the yttria crucible at an upper part thereof as a solvent.
  • the BaO-CuO mixed solution is prepared by mixing barium carbonate and copper oxide so as to obtain a mixture of 3:5 in mole ratio of Ba and Cu, then by calcining the mixture at 880°C for 40 hours. Thereafter, the crucible containing the solute and the solvent is heated to about 1,000°C so as to melt the solvent.
  • the oriented Y-123 crystal film 102 is brought in touch with the liquid-phase portion as seeds, then the yttria crucible is lowered in temperature by about 20°C, and then the oriented Y-123 crystal film 102 along with the magnesia single crystal substrate 101 are raised in an upward direction seen from the yttria crucible at 0.2 ⁇ m per hour and at 100rpm, so that the non-grain-boundary crystal film 103 can be formed on the oriented Y-123 crystal film 102 by primary crystals from the liquid phase.
  • the photoresist on the gold film and the photoresist on the oriented Y-123 crystal film 104 are removed by oxygen plasma.
  • the exposed gold film is removed by dry etching so as to expose the non-grain-boundary Y-123 crystal film 103.
  • the high frequency transmission line having the sectional structure as shown in Fig. 1 can be fabricated.
  • Fig. 2 shows the results of comparison about third order intermodulation distortion characteristics between the conventional structure and the structure of this embodiment.
  • the abscissa represents the input power
  • the ordinate represents the third order intermodulation distortion output power.
  • the output power is increased by the cube of the input power both in the conventional structure and the structure of this embodiment. This means that it is induced by the third harmonic distortion.
  • the third order intermodulation distortion output power is smaller by about 30dB as compared with the conventional structure. In other words, this means that under the condition of the same third order intermodulation distortion output power, the structure of this embodiment has the microwave power greater by 10dB than the conventional structure. The foregoing concerns the input power.
  • the resonance frequency of the resonator is set to about 10GHz.
  • the present invention is not limited thereto.
  • the high frequency device to be applied with the high frequency transmission line of the present invention is not limited to the resonator and may also be, for example, a filter constituted by a combination of resonators, or an oscillator or amplifier including a resonator or filter as a constituent circuit. As appreciated, effects similar to the foregoing can be achieved even in those high frequency devices.
  • R is explained to be Y (yttrium). However, R may also be one of lanthanoide series, such as Nd.
  • a multilayer film in combination of the oriented Y-123 crystal film and the non-grain-boundary Y-123 crystal film similar to the conductor line may be used.

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguides (AREA)
EP98104060A 1997-03-07 1998-03-06 Ligne de transmission haute fréquence capable d'améliorer la caractéristique de la distorsion d'intermodulation d'un dispositif haute fréquence Withdrawn EP0863568A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5271197 1997-03-07
JP52711/97 1997-03-07
JP9052711A JPH10256812A (ja) 1997-03-07 1997-03-07 高周波伝送路及び高周波デバイス

Publications (2)

Publication Number Publication Date
EP0863568A2 true EP0863568A2 (fr) 1998-09-09
EP0863568A3 EP0863568A3 (fr) 2000-11-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP98104060A Withdrawn EP0863568A3 (fr) 1997-03-07 1998-03-06 Ligne de transmission haute fréquence capable d'améliorer la caractéristique de la distorsion d'intermodulation d'un dispositif haute fréquence

Country Status (2)

Country Link
EP (1) EP0863568A3 (fr)
JP (1) JPH10256812A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834338A (zh) * 2010-04-22 2010-09-15 张家港保税区灿勤科技有限公司 一种用于控制二次谐波迁移的tm模介质谐振器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0636714A1 (fr) * 1993-07-27 1995-02-01 International Superconductivity Technology Center Matériau composite contenant des oxydes de métal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0636714A1 (fr) * 1993-07-27 1995-02-01 International Superconductivity Technology Center Matériau composite contenant des oxydes de métal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A.M. FERENDECI ET AL.: "TWO-TONE INTERMODULATION DISTORTION IN HIGH TC SUPERCONDUCTING THIN FILMS" PROCEEDINGS OF THE SPIE, vol. 2156, 1994, pages 116-122, XP002147774 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834338A (zh) * 2010-04-22 2010-09-15 张家港保税区灿勤科技有限公司 一种用于控制二次谐波迁移的tm模介质谐振器
CN101834338B (zh) * 2010-04-22 2013-01-02 张家港保税区灿勤科技有限公司 一种用于控制二次谐波迁移的tm模介质谐振器

Also Published As

Publication number Publication date
EP0863568A3 (fr) 2000-11-15
JPH10256812A (ja) 1998-09-25

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