EP0851451A1 - Ein in der Mikroelektronik verwendbares Verfahren zur selbstausrichtung und Verwendung bei der Herstellung eines Fokussierungsgitters für einen flachen Mikrospitzen-Bildschirm - Google Patents

Ein in der Mikroelektronik verwendbares Verfahren zur selbstausrichtung und Verwendung bei der Herstellung eines Fokussierungsgitters für einen flachen Mikrospitzen-Bildschirm Download PDF

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Publication number
EP0851451A1
EP0851451A1 EP97403163A EP97403163A EP0851451A1 EP 0851451 A1 EP0851451 A1 EP 0851451A1 EP 97403163 A EP97403163 A EP 97403163A EP 97403163 A EP97403163 A EP 97403163A EP 0851451 A1 EP0851451 A1 EP 0851451A1
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EP
European Patent Office
Prior art keywords
conductive layer
small diameter
layer
insulating layer
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97403163A
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English (en)
French (fr)
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EP0851451B1 (de
Inventor
Aimé Perrin
Brigitte Montmayeul
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Definitions

  • the present invention relates to a self-alignment method usable in microelectronics for get alignment of holes formed at different levels. This process applies in particular to the realization of a screen focusing grid microtip dish.
  • each levels should be positioned relative to the previous thanks to alignment marks judiciously placed. This method is difficult of use if one of the levels requires a very great positioning accuracy and it becomes unusable if one of the levels consists of patterns arranged randomly.
  • a microelectronic structure that requires very high precision in the positioning of its different levels is constituted by a flat screen to microtips.
  • Documents FR-A-2 593 953 and FR-A-2 623 013 disclose such devices visualization by cathodoluminescence excited by field emission. These devices include a electron source with microtip emissive cathodes.
  • FIG. 1 is a view in cross section of such a display screen at microtips.
  • the screen consists of a cathode 1, which is a flat structure, arranged opposite to another planar structure forming the anode 2.
  • the cathode 1 and anode 2 are separated by a space in which there is empties.
  • the cathode 1 comprises a substrate of glass 11 on which the conductor level 12 is deposited in contact with the electron emitting tips 13.
  • the conductive level 12 is covered with a layer insulating 14, for example made of silica, itself covered with a conductive layer 15.
  • Anode 2 includes a transparent substrate 21 covered with a transparent electrode 22 on which are deposited luminescent phosphors 23.
  • Anode 2 is brought to a positive voltage of several hundred volts with respect to the tips 13 (typically 200 to 500 V).
  • a positive voltage of a few tens of volts typically 60 to 100 V
  • Electrons are then torn from the points 13 and are attracted to the anode 2.
  • the trajectories of the electrons are included in a cone of half angle at the top ⁇ depending on different parameters, among others of the shape of the tips 13. This angle causes a defocus of the beam of electrons 31 all the more important as the distance between the anode and the cathode is large.
  • One of the ways to increase the yield of phosphorus so the screen brightness is to work with higher anode-cathode voltages (between 1000 and 5000 V), which involves spreading the anode further and the cathode to avoid the formation of an arc electric between these two electrodes.
  • the electron beam must be refocused.
  • This refocusing is conventionally obtained thanks to a grid which can either be placed between the anode and the cathode, is disposed on the cathode.
  • Figure 2 illustrates the case where the grid focusing is arranged on the cathode.
  • Figure 2 takes again the example of figure 1 but limited to one single microtip for clarity in the drawing.
  • An insulating layer 16 has been deposited on the grid extraction 15 and supports a metal layer 17 serving as a focus grid. Holes 19, of adequate diameter (typically between 8 and 10 ⁇ m) and concentric with holes 18, have been engraved in the layers 16 and 17.
  • the insulating layer 16 is used to insulate electrically the extraction grid 15 and the grid of focus 17.
  • the focus grid is polarized with respect to the anode so as to give the electron beam 32 the shape shown in the figure 2.
  • the method according to the invention makes it possible to obtain aligning holes formed at different levels. he is particularly recommended for making the grid focusing a flat screen with microtips.
  • This method consists in carrying out, on the structure concerned, the mask corresponding to a level from patterns from the previous level, which allows you to self-alignment of this level with respect to previous. After completion of the level considered (usually a deposit or an engraving), the mask is removed by dissolution for example.
  • This layer of a material of a different nature than that of the electrolytically deposited conductive material can be deposited using a deposition technique vacuum adapted to the nature of the material (evaporation, cathode sputtering, ).
  • This layer of a material of a different nature than that of the electrolytically deposited conductive material can be deposited using a deposition technique vacuum adapted to the nature of the material (evaporation, cathode sputtering, ).
  • the deepening stages of small diameter and large diameter holes are carried out simultaneously.
  • the following description will focus on the realization of a microtip cathode provided with an electron focusing grid.
  • the following drawings do not will show only one microtip although the invention allows the simultaneous realization of a plurality of microtips.
  • the screen is of the access type matrix, the column electrodes being arranged on the cathode.
  • Figure 3A is a cross-sectional view. It illustrates the preparatory stages of training of a microtip cathode.
  • a glass slide 41 supports a metallic layer, which has been deposited on the blade and etched to form columns 42, and a resistive layer 43. These different layers are filed in a conventional manner.
  • an insulating layer 44 On the resistive layer 43, we deposit successively (see Figure 3B) an insulating layer 44, a conductive layer 45 and an insulating layer 46.
  • the insulating layers 44 and 46 may be in silica.
  • the conductive layer 45 can be made of niobium. It is intended to form the extraction grid for electrons.
  • the next step is to burn holes in the insulating layer 46. These holes can be obtained thanks to a photomask or a network of microbeads.
  • a resin layer is deposited on the insulating layer 46. This resin layer is exposed through a mask. After development, the insulating layer 46 is etched to the metal layer 45. Then the remaining resin is dissolved.
  • FIG. 3C where a single hole 47 is represented.
  • the next step is an essential step in present invention.
  • a material conductor for example an iron-nickel alloy
  • the thickness of the deposit electrolytic is adjusted so as to obtain, in each hole 47, a mushroom 50 (see FIG. 3D) such that the foot 51 of the mushroom fills the hole 47 and as the cap 52 develops on the face upper layer of insulating layer 46 until the diameter of the cap 52 reaches the desired diameter of focus grid hole.
  • the conductive layer forming the grid focusing 55 can be made of a metal or a other slightly conductive material, for example a metal oxide.
  • the structure of cathode by etching the metal layer 45 and the insulating layer 44 until reaching the layer resistive 43.
  • the insulating layers 44 and 46 being both in silica, in the example described, the etching of the insulating layer 44 and etching of the insulating layer 46 can be performed simultaneously.
  • the cathode tips 60. Once this step is completed, the cathode is finished. Its transmitters (spikes), its extraction grid and its focus grid are self-aligned (see Figure 3H).

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP97403163A 1996-12-30 1997-12-24 Ein in der Mikroelektronik verwendbares Verfahren zur selbstausrichtung und Verwendung bei der Herstellung eines Fokussierungsgitters für einen flachen Mikrospitzen-Bildschirm Expired - Lifetime EP0851451B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9616196 1996-12-30
FR9616196A FR2757999B1 (fr) 1996-12-30 1996-12-30 Procede d'auto-alignement utilisable en micro-electronique et application a la realisation d'une grille de focalisation pour ecran plat a micropointes

Publications (2)

Publication Number Publication Date
EP0851451A1 true EP0851451A1 (de) 1998-07-01
EP0851451B1 EP0851451B1 (de) 2001-11-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP97403163A Expired - Lifetime EP0851451B1 (de) 1996-12-30 1997-12-24 Ein in der Mikroelektronik verwendbares Verfahren zur selbstausrichtung und Verwendung bei der Herstellung eines Fokussierungsgitters für einen flachen Mikrospitzen-Bildschirm

Country Status (5)

Country Link
US (1) US5981304A (de)
EP (1) EP0851451B1 (de)
JP (1) JPH10221861A (de)
DE (1) DE69708257T2 (de)
FR (1) FR2757999B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769751B1 (fr) * 1997-10-14 1999-11-12 Commissariat Energie Atomique Source d'electrons a micropointes, a grille de focalisation et a densite elevee de micropointes, et ecran plat utilisant une telle source
US6032923A (en) * 1998-01-08 2000-03-07 Xerox Corporation Fluid valves having cantilevered blocking films
FR2779243B1 (fr) * 1998-05-26 2000-07-07 Commissariat Energie Atomique Procede de realisation par photolithographie d'ouvertures auto-alignees sur une structure, en particulier pour ecran plat a micropointes
FR2779271B1 (fr) * 1998-05-26 2000-07-07 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes, a grille de focalisation auto-alignee

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0234989A1 (de) * 1986-01-24 1987-09-02 Commissariat A L'energie Atomique Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
US5186670A (en) * 1992-03-02 1993-02-16 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
EP0545621A1 (de) * 1991-11-29 1993-06-09 Motorola, Inc. Herstellungsverfahren einer Feldemissionsvorrichtung mit integraler elektrostatischer Linsenanordnung
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
EP0697710A1 (de) * 1994-08-16 1996-02-21 Commissariat A L'energie Atomique Herstellungsverfahren einer Mikrospitzen-Elektronenquelle

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0234989A1 (de) * 1986-01-24 1987-09-02 Commissariat A L'energie Atomique Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
EP0545621A1 (de) * 1991-11-29 1993-06-09 Motorola, Inc. Herstellungsverfahren einer Feldemissionsvorrichtung mit integraler elektrostatischer Linsenanordnung
US5186670A (en) * 1992-03-02 1993-02-16 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
EP0697710A1 (de) * 1994-08-16 1996-02-21 Commissariat A L'energie Atomique Herstellungsverfahren einer Mikrospitzen-Elektronenquelle

Also Published As

Publication number Publication date
JPH10221861A (ja) 1998-08-21
US5981304A (en) 1999-11-09
FR2757999B1 (fr) 1999-01-29
EP0851451B1 (de) 2001-11-14
FR2757999A1 (fr) 1998-07-03
DE69708257D1 (de) 2001-12-20
DE69708257T2 (de) 2002-07-25

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